Discrete Light Emitting And Light Responsive Devices Patents (Class 257/82)
  • Patent number: 8969884
    Abstract: A thin film transistor element is formed in each of a first aperture and a second aperture defined by partition walls, which further define a third aperture that is adjacent to the first aperture with a gap therebetween and is located in a direction, from the first aperture, differing from a direction of the second aperture. In plan view, at a bottom portion of the first aperture, a center of area of a liquid-philic layer portion is offset from a center of area of the bottom portion in a direction differing from a direction of the third aperture, and at a bottom portion of one of the first and second apertures, a center of area of a liquid-philic layer portion is offset from a center of area of the bottom portion in a direction differing from a direction of the other one of the first and second apertures.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: March 3, 2015
    Assignee: Panasonic Corporation
    Inventors: Yuko Okumoto, Akihito Miyamoto, Takaaki Ukeda
  • Publication number: 20150054001
    Abstract: A camera module and method of making same, includes a substrate of conductive silicon having top and bottom surfaces, a sensor device, and an LED device. The substrate includes a first cavity formed into the bottom surface of the substrate and has an upper surface, an aperture extending from the first cavity upper surface to the top surface of the substrate, and a second cavity formed into the top surface of the substrate and having a lower surface. The sensor device includes at least one photodetector, is disposed at least partially in the first cavity, and is mounted to the first cavity upper surface. The LED device includes at least one light emitting diode, is disposed at least partially in the second cavity, and is mounted to the second cavity lower surface.
    Type: Application
    Filed: August 20, 2014
    Publication date: February 26, 2015
    Inventors: Vage Oganesian, Zhenhua Lu
  • Publication number: 20150054002
    Abstract: A manufacturing method of a semiconductor structure includes the following steps. A patterned photoresist layer is formed on a wafer of the wafer structure. The wafer is etched, such that channels are formed in the wafer, and a protection layer of the wafer structure is exposed through the channels. The protection layer is etched, such that openings aligned with the channels are formed in the protection layer. Landing pads in the protection layer are respectively exposed through the openings and the channels, and the caliber of each of the openings is gradually increased toward the corresponding channel. Side surfaces of the wafer surrounding the channels are etched, such that the channels are expanded to respectively form hollow regions. The caliber of the hollow region is gradually decreased toward the opening, and the caliber of the opening is smaller than that of the hollow region.
    Type: Application
    Filed: August 20, 2014
    Publication date: February 26, 2015
    Inventors: Wei-Ming CHIEN, Chia-Sheng LIN, Tsang-Yu LIU, Yen-Shih HO
  • Publication number: 20150048386
    Abstract: An image sensing module includes an image sensing unit, a light transmitting unit, a substrate unit and lens unit. The image sensing unit includes an image sensing element having an image sensing area on the top side of the image sensing element. The light transmitting unit includes a light transmitting element supported above the image sensing element by a plurality of support members. The substrate unit includes a flexible substrate disposed on the image sensing element and electrically connected to the image sensing element through a plurality of electrical conductors, and the flexible substrate has at least one through opening for receiving the light transmitting element. The lens unit includes an opaque holder disposed on the flexible substrate to cover the light transmitting element and a lens assembly connected to the opaque holder and disposed above the light transmitting element.
    Type: Application
    Filed: October 17, 2013
    Publication date: February 19, 2015
    Applicant: AZUREWAVE TECHNOLOGIES, INC.
    Inventor: CHI-HSING HSU
  • Patent number: 8952397
    Abstract: The present invention relates to a light emitting device, including a plurality of light guide portions, a reflection prevention substance disposed on an inclined surface of each light guide portion of the plurality of light guide portions, and a plurality light emitting regions. Each light emitting region includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer. Each light guide portion of the plurality of light guide portions is surrounded by light emitting regions of the plurality of light emitting regions.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: February 10, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventor: Jae Ho Lee
  • Publication number: 20150034975
    Abstract: Various optoelectronic modules are described that include an optoelectronic device (e.g., a light emitting or light detecting element) and a transparent cover. Non-transparent material is provided on the sidewalls of the transparent cover, which, in some implementations, can help reduce light leakage from the sides of the transparent cover or can help prevent stray light from entering the module. Fabrication techniques for making the modules also are described.
    Type: Application
    Filed: July 24, 2014
    Publication date: February 5, 2015
    Inventors: Hartmut Rudmann, Simon Gubser, Susanne Westenhöfer, Stephan Heimgartner, Jens Geiger, Sonja Hanselmann, Christoph Friese, Xu Yi, Thng Chong Kim, John A. Vidallon, Ji Wang, Qi Chuan Yu, Kam Wah Leong
  • Patent number: 8946730
    Abstract: In a thin film transistor device, partition walls define first, second, and third apertures. In plan view, at a bottom portion of the first aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction differing from a direction of the third aperture, and at a bottom portion of one of the first and second apertures, a center a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction differing from a direction of the other one of the first and second apertures.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: February 3, 2015
    Assignee: Panasonic Corporation
    Inventors: Yuko Okumoto, Akihito Miyamoto, Takaaki Ukeda
  • Patent number: 8946748
    Abstract: There is provided a semiconductor light emitting device including: a light transmissive substrate; a light emitting part; first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively; and a rear reflective part including a reflective metallic layer, and a light transmissive dielectric layer interposed between the light transmissive substrate and the reflective metallic layer.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: February 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae Hun Kim, Seung Wan Chae, Yong Il Kim, Seung Jae Lee, Tae Sung Jang, Jong Rak Sohn, Bo Kyoung Kim
  • Publication number: 20150028360
    Abstract: A package structure of an optical module includes: a substrate defined with a light-emitting region and a light-admitting region; a light-emitting chip disposed at the light-emitting region of the substrate; a light-admitting chip disposed at the light-admitting region of the substrate; two encapsulants for enclosing the light-emitting chip and the light-admitting chip, respectively; and a shielding layer formed on the substrate and the encapsulants and having a light-emitting hole and a light-admitting hole, wherein the light-emitting hole and the light-admitting hole are positioned above the light-emitting chip and the light-admitting chip, respectively. Accordingly, the optical module package structure simplifies a packaging process and cuts manufacturing costs.
    Type: Application
    Filed: November 6, 2013
    Publication date: January 29, 2015
    Applicant: LINGSEN PRECISION INDUSTRIES, LTD.
    Inventors: Ming-Te TU, Yao-Ting YEH
  • Publication number: 20150028359
    Abstract: This invention relates to an optical module package structure. A substrate is defined with a light receiving region and a light emitting region. A light receiving chip and a light emitting chip are disposed on the light receiving region and the light emitting region of the substrate, respectively. An electronic unit is disposed on the substrate and electrically connected to the light emitting chip. Two encapsulating gels are coated on each of the chips and the electronic unit. A cover is disposed on the substrate and has a light emitting hole and a light receiving hole, located above the light emitting chip and the light receiving chip, respectively. In this way, the package structure of the optical module of the present invention integrates passive components, functional ICs or dies into a module, and the optical module provides the functions of current limiting or function adjustment.
    Type: Application
    Filed: November 5, 2013
    Publication date: January 29, 2015
    Applicant: Lingsen Precision Industries, Ltd.
    Inventors: Ming-Te TU, Yu-Chen LIN
  • Publication number: 20150028358
    Abstract: The present invention relates to a package structure of an optical module. The light emitting chip and the light receiving chip are disposed on the light emitting region and the light receiving region of the substrate, respectively. Two encapsulating gels are coated on the light emitting chip and the light receiving chip to form a first and a second hemispherical lens portions thereon, respectively. A cover is affixed on the substrate and each of the encapsulating gels and has a light emitting hole and a light receiving hole, where the first and second lens portions are accommodated, respectively. In this way, the package structure of an optical module of the present invention can be made with the encapsulating gels of different curvatures according to different needs to improve the luminous efficiency of the light emitting chip effectively and to improve the reception efficiency of the light receiving chip.
    Type: Application
    Filed: November 5, 2013
    Publication date: January 29, 2015
    Applicant: LINGSEN PRECISION INDUSTRIES, LTD
    Inventors: Ming-Te TU, Yu-Shiang CHEN
  • Publication number: 20150028357
    Abstract: This invention relates to a package structure of an optical module. A light emitting and light receiving chips are disposed on a light emitting and light receiving region of the substrate, respectively. Two encapsulating gels cover the light emitting chip and the light receiving chip, respectively, and form a first and a second hemispherical lens portions on the light emitting chip and the light receiving chip, respectively. A cover is affixed on the substrate and each of the encapsulating gels and has a light emitting hole and a light receiving hole, wherein the first and the second lens portions are accommodated, respectively. An engaging means is formed on an adjacent surface between each encapsulating gels and the cover in a horizontal direction. Thereby, the package structure of the optical module of the present invention increases the connection region between each encapsulating gels and the cover to enhance the engagement.
    Type: Application
    Filed: November 5, 2013
    Publication date: January 29, 2015
    Applicant: Lingsen Precision Industries, Ltd
    Inventors: Ming-Te TU, Yao-Ting YEH
  • Publication number: 20150028361
    Abstract: An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.
    Type: Application
    Filed: February 8, 2013
    Publication date: January 29, 2015
    Inventors: Thomas Schlereth, Stephan Kaiser, Alexander Linkov
  • Patent number: 8941124
    Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, and an inorganic film. The semiconductor layer includes a first surface having an unevenness, a second surface opposite to the first surface, and a light emitting layer. The semiconductor layer includes gallium nitride. The inorganic film is provided to conform to the unevenness of the first surface and in contact with the first surface. The inorganic film has main components of silicon and nitrogen. The inorganic film has a refractive index between a refractive index of the gallium nitride and a refractive index of air. An unevenness is formed also in a surface of the inorganic film.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: January 27, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akihiro Kojima, Takayoshi Fujii, Yoshiaki Sugizaki
  • Publication number: 20150022762
    Abstract: The invention relates to a semi-conductor component, comprising a semi-conductor chip (1) which has an active layer (1a) suitable for generating radiation and suitable for emitting radiation in the blue wavelength range. A first converter (3a) comprising a Ce doping is arranged downstream of the semiconductor chip (1) in the emission direction. In addition, a second converter (3b) comprising a minimum Ce doping of 1.5% is arranged downstream of the semiconductor chip (1) in the emission direction. The invention further relates to a module with a plurality of such components.
    Type: Application
    Filed: August 16, 2012
    Publication date: January 22, 2015
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Ion Stoll, Kirstin Petersen
  • Publication number: 20150021627
    Abstract: A light emitting apparatus includes a translucent substrate, and a light emitting section and an optical filter section arranged in a first region of the substrate when viewed in a normal direction of a first surface of the substrate. The light emitting section has a laminate structure that includes, on the first surface of the substrate, a dielectric multilayer film, a first electrode, a functional layer with a light emitting layer, and a second electrode having semi-transmissive reflectivity. The optical filter section has a laminate structure that includes, on the first surface of the substrate, the dielectric multilayer film, the functional layer, and the second electrode. The dielectric multilayer film and the functional layer extend over the first region.
    Type: Application
    Filed: July 15, 2014
    Publication date: January 22, 2015
    Inventors: Tetsuji FUJITA, Hidetoshi YAMAMOTO, Hideto ISHIGURO, Tsukasa EGUCHI
  • Patent number: 8937298
    Abstract: A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: January 20, 2015
    Assignee: RoseStreet Labs, LLC
    Inventor: Robert Forcier
  • Patent number: 8937342
    Abstract: A CMOS image sensor includes an active pixel structure suitable for sensing light incident from outside and converting a sensed light into an electrical signal, and an optical block structure suitable for blocking a visible light and passing a UV light to check and evaluate an electrical characteristic of the active pixel area. The UV pass filter includes first and second insulation layers comprising an insulator, and a metal layer formed between the first and second insulation layers.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: January 20, 2015
    Assignees: SK Hynix Inc., Postech Academy-Industry Foundation
    Inventors: Do Hwan Kim, Su Hwan Lim, Hae Wook Han, Young Woong Do, Won Jun Lee
  • Patent number: 8937377
    Abstract: A package-on-package proximity sensor module including a infrared transmitter package and a infrared receiver package is presented. The proximity sensor module may include a fully-assembled infrared transmitter package and a fully-assembled infrared receiver package disposed on a quad flat pack no-lead (QFN) lead frame molded with an IR cut compound housing. A bottom surface of the QFN lead frame may be etched and covered with the IR cut compound to provide a locking feature between the QFN lead frame and the IR cut compound housing.
    Type: Grant
    Filed: October 8, 2010
    Date of Patent: January 20, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Yufeng Yao, Chi Boon Ong, Chee Heng Wong
  • Patent number: 8937321
    Abstract: The present invention is directed to a vertical-type luminous device and high through-put methods of manufacturing the luminous device. These luminous devices can be utilized in a variety of luminous packages, which can be placed in luminous systems. The luminous devices are designed to maximize light emitting efficiency and/or thermal dissipation. Other improvements include an embedded zener diode to protect against harmful reverse bias voltages.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: January 20, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: YuSik Kim
  • Patent number: 8927303
    Abstract: The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.
    Type: Grant
    Filed: September 2, 2009
    Date of Patent: January 6, 2015
    Assignee: Formosa Epitaxy Incorporation
    Inventors: Wei-Kang Cheng, Jia-Lin Li, Shyi-Ming Pan, Kuo-Chi Huang
  • Patent number: 8928837
    Abstract: A circuit substrate including a base layer and a plurality of lead units arranged as an array is provided, wherein the base layer has a plurality of through grooves, and the lead units are disposed on the base layer. Each of the lead units includes a common terminal and at least three leads. The common terminal is capable of being divided into a plurality of electrodes connected with each other. The leads are extended outwards from the edge of the common terminal, and each of the leads is extended outwards from the edge of one of the electrodes. The through grooves expose the common terminals of the lead units.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: January 6, 2015
    Assignee: Everlight Electronics Co., Ltd.
    Inventor: Wen-Chieh Tsou
  • Publication number: 20150001425
    Abstract: A device for emitting electromagnetic radiation includes at least one optical semiconductor element configured to generate electromagnetic radiation, at least one photodiode, and at least one beam splitter. The beam splitter is arranged relative to the optical semiconductor element and the photodiode in such a way that one portion of the electromagnetic radiation generated by the optical semiconductor element passes through the beam splitter and a further portion of the electromagnetic radiation generated by the optical semiconductor element is reflected by the beam splitter and is directed onto the photodiode.
    Type: Application
    Filed: June 26, 2014
    Publication date: January 1, 2015
    Inventors: Richard Fix, Patrick Sonstroem, Gottfried Doehler
  • Publication number: 20140374776
    Abstract: The optical-coupling semiconductor device includes: a primary support plate and a secondary support plate facing each other and spaced apart a predetermined distance; a light emitting device situated on the primary support plate; and a light receiving device including a light receiving surface to receive light from a light emitting surface of the light emitting device. The light emitting device is situated on a surface facing the secondary support plate of the primary support plate so that the light emitting surface is oriented toward the secondary support plate. The light receiving device is situated on a surface facing the primary support plate of the secondary support plate so that the light receiving surface faces the light emitting surface of the light emitting device. The light emitting device is on the light receiving surface of the light receiving device.
    Type: Application
    Filed: June 17, 2014
    Publication date: December 25, 2014
    Inventors: Takeshi NAKASUJI, Yuichi NIIMURA, Hideo NISHIKAWA
  • Publication number: 20140374777
    Abstract: A light emitting device is capable of enhancing the radiant intensity on a single direction. The light emitting device includes a substrate and an LED chip bonded to the substrate, wherein the substrate has a first cavity formed thereon having a first bottom surface for disposing the LED chip and a first lateral connecting to the first bottom surface, and the substrate has a second cavity formed thereon having a second bottom surface for bonding the metal wire and a second lateral connecting to the second bottom surface; and the first lateral has a notch formed thereon, which connects to the second bottom surface and the second lateral, and an area of the second bottom surface of the second cavity is smaller than that of the first bottom surface of the first cavity.
    Type: Application
    Filed: September 2, 2014
    Publication date: December 25, 2014
    Inventor: Yuki Tanuma
  • Patent number: 8916895
    Abstract: This invention discloses an infrared light-emitting diode. The infrared light-emitting diode comprises: only one core for emitting infrared light; a packaging body which at least comprises a first surface that is convex and in front of the core and a second surface that is plane and on one side of the core; and leads connected to the core and extending to outside of the packaging body; wherein the infrared light emitted by the core forms at least two beams of infrared light in different directions after being emitted from the packaging body through the first surface and the second surface. With such infrared LED and the touch screen, touch system and interactive display based on the LED, at least two beams of infrared light in different directions can be emitted requiring only one core.
    Type: Grant
    Filed: June 9, 2011
    Date of Patent: December 23, 2014
    Assignee: Beijing IRTouch Systems Co., Ltd
    Inventors: Xinlin Ye, Zhenzhong Zou, Jianjun Liu, Xinbin Liu
  • Patent number: 8916857
    Abstract: A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention.
    Type: Grant
    Filed: November 24, 2012
    Date of Patent: December 23, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Ryoji Nomura
  • Patent number: 8907330
    Abstract: An organic light emitting diode display including a substrate, a first electrode on the substrate, a light-emitting layer on the first electrode, a second electrode on the light-emitting layer, and a p-doping layer between the first electrode and the light-emitting layer.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: December 9, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ja-Hyun Im, Tae-Kwang Sung, Ji-Hwan Yoon, Kwan-Hee Lee
  • Publication number: 20140353687
    Abstract: An LED module includes first through third LED chips and two Zener diodes for preventing excessive voltage application to the first and the second LED chips. A first lead includes a mount portion on which the first through third LED chips and the two Zener diodes are mounted. A resin package covers part of the first lead and includes an opening for exposing the three LED chips and two Zener diodes. A single insulating layer bonds the first and second LED chips to the first lead. A single conductive layer bonds the third LED chip and two Zener diodes to the first lead. The Zener diodes are arranged between the first, second LED chips and the third LED chip.
    Type: Application
    Filed: July 29, 2014
    Publication date: December 4, 2014
    Inventor: Hideki SAWADA
  • Patent number: 8901575
    Abstract: The present invention relates to an AC light emitting diode. An object of the present invention is to provide an AC light emitting diode wherein various designs for enhancement of the intensity of light, prevention of flickering of light or the like become possible, while coming out of a unified method of always using only one metal wire with respect to one electrode when electrodes of adjacent light emitting cells are connected through metal wires. To this end, the present invention provides an AC light emitting diode comprising a substrate; bonding pads positioned on the substrate; a plurality of light emitting cells arranged in a matrix form on the substrate; and a wiring means electrically connecting the bonding pads and the plurality of light emitting cells, wherein the wiring means includes a plurality of metal wires connecting an electrode of one of the light emitting cells with electrodes of other electrodes adjacent to the one of the light emitting cells.
    Type: Grant
    Filed: August 1, 2006
    Date of Patent: December 2, 2014
    Assignee: Seoul Viosys Co., Ltd.
    Inventor: Jae Ho Lee
  • Patent number: 8900895
    Abstract: A method of manufacturing an LED package including steps: providing an electrode, the electrode including a first electrode, a second electrode, a channel defined between the first electrode and the second electrode, the first electrode and the second electrode arranged with intervals mutually, a cavity arranged on the first electrode, and the cavity communicating with the channel; arranging an LED chip electrically connecting with the first electrode and the second electrode and arranged inside the cavity; providing a shield covering the first electrode and the second electrode; injecting a transparent insulating material to the cavity via the channel, and the first electrode, the second electrode, and the shield being interconnected by the transparent insulating material; solidifying the transparent insulating material to obtain the LED package.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: December 2, 2014
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Hou-Te Lin, Ming-Ta Tsai
  • Patent number: 8901581
    Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes first and second conductive semiconductor layers having an active layer formed therebetween, and first and second electrodes formed on the first and second layers. A first insulation layer is formed on portions of the light emitting cell, while a second insulation layer entirely covers at least one light emitting cell. A method of manufacturing the semiconductor light emitting device, and a light emitting module and an illumination apparatus including the semiconductor light emitting device are also provided.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: December 2, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chan Mook Lim, Jong Ho Lee, Jin Hwan Kim, Jin Hyun Lee, Su Hyun Jo, Hae Yeon Hwang
  • Patent number: 8896002
    Abstract: A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
    Type: Grant
    Filed: September 29, 2009
    Date of Patent: November 25, 2014
    Assignee: Sony Corporation
    Inventors: Rintaro Koda, Masaru Kuramoto, Eiji Nakayama, Tsuyoshi Fujimoto
  • Patent number: 8889448
    Abstract: Provided are a light-emitting element and a method of fabricating the same. The light-emitting element includes: a first pattern including conductive regions and non-conductive regions. The non-conductive regions are defined by the conductive regions. The light-emitting element also include an insulating pattern including insulating regions and non-insulating regions which correspond respectively to the conductive regions and non-conductive regions. The non-insulating regions are defined by the insulating regions. The light-emitting element further includes a light-emitting structure interposed between the first pattern and the insulating pattern. The light-emitting structure includes a first semiconductor pattern of a first conductivity type, a light-emitting pattern, and a second semiconductor pattern of a second conductivity type which are stacked sequentially. The light-emitting element also includes a second pattern formed in the non-insulating regions.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: November 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yu-Sik Kim
  • Patent number: 8879023
    Abstract: A circuit substrate including a base layer and a plurality of lead units arranged as an array is provided, wherein the base layer has a plurality of through grooves, and the lead units are disposed on the base layer. Each of the lead units includes a common terminal and at least three leads. The common terminal is capable of being divided into a plurality of electrodes connected with each other. The leads are extended outwards from the edge of the common terminal, and each of the leads is extended outwards from the edge of one of the electrodes. The through grooves expose the common terminals of the lead units.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: November 4, 2014
    Assignee: Everlight Electronics Co., Ltd.
    Inventor: Wen-Chieh Tsou
  • Publication number: 20140319548
    Abstract: A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.
    Type: Application
    Filed: April 23, 2014
    Publication date: October 30, 2014
    Applicant: STMICROELECTRONICS (SHENZHEN) MANUFACTURING CO. LTD
    Inventor: Jing-En LUAN
  • Patent number: 8872159
    Abstract: Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: October 28, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Travis Anderson, Karl D. Hobart
  • Patent number: 8872196
    Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a sensor region formed in the semiconductor substrate; a light emitting device disposed on the second surface of the semiconductor substrate; at least one first conducting bump disposed on the first surface of the semiconductor substrate and electrically connected to the sensor region; at least one second conducting bump disposed on the first surface of the semiconductor substrate and electrically connected to the light emitting device; and an insulating layer located on the semiconductor substrate to electrically insulate the semiconductor substrate from the at least one first conducting bump and the at least one second conducting bump.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: October 28, 2014
    Inventors: Po-Han Lee, Chien-Hung Liu
  • Patent number: 8872330
    Abstract: A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.
    Type: Grant
    Filed: July 16, 2007
    Date of Patent: October 28, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Siegfried Herrmann, Berthold Hahn
  • Patent number: 8866064
    Abstract: A proximity sensor with multi-directional movement detection is provided. The proximity sensor may include an ASIC chip; at least three light sources configured to emit light in a particular sequence; and a photo detector configured to receive light and generate an output signal. The multi-directional proximity sensor may have a first proximity sensor with at least one side surface and a second proximity sensor connected to the first proximity sensor configured to detect object movement over a plane substantially parallel to the at least one side surface of the first proximity sensor. The multi-directional movement detection proximity sensor may include a PCB, in which more than one proximity sensor may be disposed on the PCB and operatively integrated to detect multi-directional movement.
    Type: Grant
    Filed: July 26, 2011
    Date of Patent: October 21, 2014
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Yufeng Yao, Chee Heng Wong, Sze Ping Ong
  • Publication number: 20140306230
    Abstract: The present invention discloses an integral LED component which integrates LED epitaxial structures electrodes and interconnect with a package substrate together and an integral manufacturing process thereof. The integral LED component can be made with multiple epitaxial structures or with just a single epitaxial structure. The integral LED component can be mounted into a hollow carrier. And by having support by the hollow carrier, the package substrate can be mounted and contacted with a heat conductive or a dissipation device. The integral LED component is fabricated by wafer level process and cut from the wafer as an independent component. By different manufacturing process, the integral LED component can be made as Vertical LED structure or Lateral LED structure.
    Type: Application
    Filed: April 26, 2013
    Publication date: October 16, 2014
    Applicant: NEOBULB TECHNOLOGIES, INC.
    Inventor: Jen-Shyan Chen
  • Patent number: 8860318
    Abstract: In accordance with certain embodiments, an illumination system comprising a plurality of power strings features elements facilitating compensation for failure of one or more light-emitting elements connected along each power string.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: October 14, 2014
    Assignee: Cooledge Lighting Inc.
    Inventors: Michael A. Tischler, Philippe M. Schick, Paul Jungwirth, Calvin Wade Sheen
  • Patent number: 8853754
    Abstract: An image or light sensor chip package includes an image or light sensor chip having a non-photosensitive area and a photosensitive area surrounded by the non-photosensitive area. In the photosensitive area, there are light sensors, a layer of optical or color filter array over the light sensors and microlenses over the layer of optical or color filter array. In the non-photosensitive area, there are an adhesive polymer layer and multiple metal structures having a portion in the adhesive polymer layer. A transparent substrate is formed on a top surface of the adhesive polymer layer and over the microlenses. The image or light sensor chip package also includes wirebonded wires or a flexible substrate bonded with the metal structures of the image or light sensor chip.
    Type: Grant
    Filed: May 18, 2012
    Date of Patent: October 7, 2014
    Assignee: Qualcomm Incorporated
    Inventors: Mou-Shiung Lin, Jin-Yuan Lee
  • Patent number: 8847244
    Abstract: A photpcoupler includes: a light emitting element; a first photodiode array; a second photodiode array; a third photo diode array; an enhancement-mode MOSFET; a first depletion-mode MOSFET; and a second depletion mode MOSFET. The light emitting element converts the input electrical signal into the optical signal. A drain current of the enhancement-mode MOSFET is supplied to the external load when the optical signal is ON. A drain current of the first depletion-mode MOSFET is supplied to the external load when the optical signal is OFF and a voltage passing through the second depletion-mode MOSFET switched to the ON state is supplied to the gate of the first depletion-mode MOSFET. And the drain current of the first depletion-mode MOSFET is larger than a drain current of the first depletion-mode MOSFET when a gate voltage of the first depletion-mode MOSFET is zero.
    Type: Grant
    Filed: July 11, 2013
    Date of Patent: September 30, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yoichiro Ito
  • Patent number: 8847258
    Abstract: The invention relates to an organic electroluminescent device (1) comprising a substrate (2), at least one electroluminescent layer stack on top of the substrate (2) with at least a substrate electrode (3), a counter electrode (5) and at least one organic electroluminescent layer (4) arranged between substrate electrode (2) and counter electrode (5), and a short prevention layer (6) covering the counter electrode (5) establishing a double layer (DL) with a tensile stress (TS) induced by the short prevention layer (5), and an electrically isolating layer (8) at least partly covering the short prevention layer (6), wherein the electrically isolating layer (8) is suitable to partially dissolve the organic layer (4) in the vicinity of a defect (7) within the electroluminescent layer stack and the tensile stress (TS) induced by the short prevention layer (6) is suitable to roll up (10) the double layer (DL) adjacent to the defect (7) after deposition of the electrically isolating layer (8).
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: September 30, 2014
    Assignee: Koninklijke Philips N.V.
    Inventor: Herbert F. Boerner
  • Publication number: 20140284629
    Abstract: According to one embodiment, a photocoupler includes a light emitting element, a light receiving element, a bonding layer, input terminals, output terminals and a molded resin body. A light emitting element includes a transparent support substrate, a semiconductor stacked body, and first and second electrodes. A light receiving element includes a light reception surface, a first electrode, and a second electrode. A bonding layer is configured to bond the first surface of the support substrate to the light reception surface side of the light receiving element. The bonding layer is transparent and insulative. Input terminals are connected to the first and second electrodes of the light emitting element. Output terminals are connected to the first and second electrodes of the light receiving element. The light reception surface is included in the light emitting surface. An input electrical signal is converted into an output electrical signal.
    Type: Application
    Filed: September 12, 2013
    Publication date: September 25, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naoya Takai, Eiji Nakashima
  • Patent number: 8841145
    Abstract: System for wafer-level phosphor deposition. A method for phosphor deposition on a semiconductor wafer that has a plurality of LED dies includes the operations of covering the semiconductor wafer with a selected thickness of photo resist material, removing portions of the photo resist material to expose portions of the semiconductor wafer so that electrical contacts associated with the plurality of LED dies remain unexposed, and depositing phosphor on the exposed portions of the semiconductor wafer.
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: September 23, 2014
    Assignee: Bridgelux, Inc.
    Inventor: Tao Xu
  • Patent number: 8835908
    Abstract: Disclosed is an organic light-emitting device (OLED), wherein a lower electrode, an organic emitting unit, an upper electrode, and a light enhance layer are subsequently formed between a bottom substrate and a top substrate. The light enhance layer has higher refractive index, between 2 and 3, than that of the top substrates, thereby efficiently improving the luminance intensity of the OLED.
    Type: Grant
    Filed: April 29, 2010
    Date of Patent: September 16, 2014
    Assignee: Innolux Corporation
    Inventors: Hsiang-Lun Hsu, Hsin-Yuan Su
  • Patent number: 8829539
    Abstract: A luminous vehicle glazing, containing: a first sheet containing a mineral or an organic glass having a first main face, a second main face, and an injection edge; a peripheral light source with an emitting face, which faces the injection edge; a guided-light extracting element; a peripheral functional element, bonded to the first sheet, which is fluid-tight, including a cavity for placing the peripheral light source; a covering element, which covers the cavity and the peripheral light source, which is fluid-tight, and which is selected from i) a cap combined with an interfacial element, for interfacial fluid-tightness or ii) a fluid-tight sealing mastic covering the peripheral light source and sealing the peripheral functional element. In addition, a method of manufacturing the luminous vehicle glazing.
    Type: Grant
    Filed: January 24, 2011
    Date of Patent: September 9, 2014
    Assignee: Saint-Gobain Glass France
    Inventors: Christophe Kleo, Bastien Grandgirard, Alexandre Richard, Adele Verrat-Debailleul
  • Patent number: 8822984
    Abstract: Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.
    Type: Grant
    Filed: November 28, 2011
    Date of Patent: September 2, 2014
    Assignee: Savannah River Nuclear Solutions, LLC
    Inventor: Lucile C. Teague