Abstract: Reflective optical sensors. A reflective optical sensor for sensing the presence of an object can include a reflective sensor package having a first cavity and a second cavity. The first and second cavities can be located side-by-side in the sensor package. A vertical cavity surface emitting laser (VCSEL) can be located within the first cavity for producing an optical emission. An optical receiver can be located within the second cavity and configured to receive at least a portion of the produced optical emission that is reflected from the object such that when the reflected emission is above a threshold strength the object is determined to be present. The optical receiver can be a shunt phototransistor and can include reverse bias protection.

Abstract: First and second optical semiconductor elements are respectively mounted on first and second mount beds. First and second lead terminals are respectively arranged around the first and the second mount beds. The second lead terminals extend along the first lead terminals. The first and second lead terminals are electrically connected to the first and second optical semiconductor elements through first and second connection conductors, respectively. The second mount bed is arranged at an interval from the first optical semiconductor element, and extends along the first mount bed. The second mount bed has a penetration hole at a portion corresponding to a light emitting or light receiving surface of the first optical semiconductor element. The second lead terminals are bent so as to be laminated on the first lead terminal. The second lead terminals are fixed to the first lead terminal at portions via insulating material.

Abstract: The present invention relates to an LED package including photo diode. The LED package includes a silicon substrate, and a photo diode is formed in an upper part thereof. Also, an insulation layer is formed on the silicon substrate excluding at least a light-receiving area of the photodiode. In the LED package, an LED terminal is formed on the insulation layer to be connected to the photo diode. First and second LED connecting pads are formed on the insulation layer, and arranged on both sides of the photo diode. In addition, an LED chip is mounted on the silicon substrate, and connected to the first and second LED connecting pads.

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: A light source error detection system and method including monitoring a plurality of characteristics of a light source and controlling the light source based on a plurality of monitored results. The system and method control the light source differently for a first case when only one of the monitored characteristics is abnormal than a second case when more than two of the monitored characteristics are abnormal. In controlling the light source, an output power of the light source is decreased with different time constant for the first case and the second case.

Abstract: An optical module includes: a base plate; a light emitting element mounted on the base plate; an integrated circuit element of the light receiving element built-in type mounted on the base plate by bonded wires and having a light receiving portion for receiving returning light originating from light emitted from the light emitting element; and a circuit board having a window for allowing light to pass therethrough and connected to the integrated circuit element in a state wherein the light receiving portion is exposed through the window.

Abstract: The invention provides compounds of formula I wherein R is H or alkyl; R1, R2, and R4 are independently at each occurrence a C1-C20 aliphatic radical, a C3-C20 aromatic radical, or a C3-C20 cycloaliphatic radical; R3 and R5 are independently at each occurrence hydrogen, a C1-C20 aliphatic radical, a C3-C20 aromatic radical, or a C3-C20 cycloaliphatic radical; and a, b and d are independently 0 or an integer ranging from 1 to 3. The invention further provides polymers derived from compounds of formula I, said polymers may be polyesters, polyethers, polycarbonates, polyestercarbonates, polyetherketones, polyethersulfones, and the like. Compounds and polymers of the invention find use in light emitting devices.

Abstract: A light-emitting element has a property that a resistance value (internal resistance) changes in accordance with an environmental temperature. It is an object to downsize a monitoring element which corrects an influence of variations in current value of the light-emitting element, which are caused by an environmental temperature change and a change with time. A pixel includes a plurality of sub-pixels, areas of light-emitting elements provided in the individual sub-pixels are made to be different from each other, and an area of a monitoring element is made to be the same as an area of the light-emitting element in any of the sub-pixels, thereby correcting light-emission of the pixel by the monitoring element.

Abstract: The present invention provides the following methods and displays. A method for manufacturing an EL display panel, having the step of forming a light-emitting layer by irradiating light on a photothermal conversion layer through a transparent base member while a dye layer of a transfer member having the transparent base member, the photothermal conversion layer and this fluorescent dye layer is kept in close contact with an object to which the dye is to be transferred, the transparent base member, the photothermal conversion layer and the transfer member being laminated in this order, so that the dye can be transferred to the object. An EL display panel produced according to this method, an image display having this panel, and a method for manufacturing the image display.

Abstract: An optical light engine is fabricated by providing a thermally conductive base having one or more mounting pedestals for elevating one or more LED die above the base's surface. The LED die are mounted on the pedestals, electrically connected, and a mold having a molding surface for molding a dome centered around the LED die is disposed on the base over the pedestal-mounted LED die. The encapsulating material is then injected through an input port disposed in the base to mold the dome around the LED die. The encapsulant material is cured and the mold is removed. In an advantageous embodiment, the light engine comprises a ceramic-coated metal base made by the low temperature co-fired ceramic-on-metal process (LTCC-M).

Abstract: An electronic element wafer module according to the present invention is provided, in which a translucent support substrate for covering and protecting a plurality of electronic elements is attached on an electronic element wafer having the plurality of electronic elements formed thereon, and an optical filter is formed corresponding to the electronic elements on at least one surface of the translucent support substrate, where the optical filter is removed to lessen warping along a part or all of dicing lines for individually dividing the electronic element wafer module into a plurality of electronic element modules.

Abstract: An optocoupler has an organic light emitter and an inorganic photodetector with a detector area, the detector area being optically coupled to the organic light emitter. The organic light emitter converts an electrical input signal into a light signal and the inorganic photodetector converts the light signal into an electrical output signal, the organic light emitter and the inorganic photodetector being integrated in a component and galvanically separated.

Abstract: An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: Disclosed herein is a package structure including at least one high power light-emitting diode to exhibit excellent heat release properties. In the package structure, a light-emitting diode chip which generates heat is directly attached to a beacon processed to protrude from part of a heat spreader having high heat conductivity, whereby an electrical wiring portion is separated from a heat release portion, thus maximizing heat release properties and realizing high luminance and reliability.

Abstract: Reflectors for a semiconductor light emitting device include a lower sidewall portion defining a reflective cavity. A substantially horizontal shoulder portion extends outwardly from the sloped lower sidewall portion. The horizontal shoulder portion has a circumferentially extending moat formed therein. An upper sidewall portion extends upwardly from the horizontal shoulder portion.

Abstract: A luminous device and a method of manufacturing the luminous device are provided. The luminous device includes a light emitting layer and first and second electrodes connected to the light emitting layer. The light emitting layer is a strained nanowire.

Abstract: The invention relates to methods and devices comprising a nanostructure (2;4,4a) for improving the optical behavior of components and apparatuses and/or improving the behavior of sensors by increasing the active surface area. The nanostructure (2) is produced by means of a special RIE etching process, can be modified regarding the composition of the materials thereof, and can be provided with adequate coatings. The amount of material used for the base layer (3) can be reduced by supplying a buffer layer (406). Many applications are disclosed.

Abstract: The present invention provides an optical isolator and a method of forming the optical isolator. Embodiments of the optical isolator include a silicon layer having at least one trench formed therein. The trench has a resistance that varies in response to electromagnetic radiation. Embodiments of the optical isolator also include at least one first diode formed in the silicon layer such that the trench encompasses the first diode. The first diode is configured to generate electromagnetic radiation in response to an applied signal. Embodiments of the optical isolator further include first and second regions formed in contact with the trench such that the resistance between the first and second contact regions varies in response to the electromagnetic radiation generated by the first diode.

Abstract: A pixel having a well-isolated charge storage region or floating diffusion region may be obtained by providing a separate P-well around the storage region or floating diffusion region. In one embodiment, a separate P-well entirely encases the storage region and is in contact with the storage region. This P-well provides an electrical barrier for preventing electrons that are generated elsewhere in the pixel from contaminating the storage region. In another embodiment, a first separate P-well encases and is in contact with the storage region and a second separate P-well encases and is in contact with the floating diffusion region.

Abstract: The present invention reduces the radiation noise and the degradation of the optical waveform appeared in the output of the laser module. The laser module of the present invention comprises the laser diode, the photodiode, and the resistor, which are mounted on the stem of the laser module. The stem includes four lead terminals, one of which is commonly connected to the laser diode ad the photodiode via the resistor. Therefore, the leak of the modulation current applied to the lead terminal, to which the laser diode and the photodiode are commonly connected, may be reduced.

Abstract: Optical die structures and associated package substrates are generally described. In one example, an electronic device includes a package substrate having a package substrate core, a dielectric layer coupled with the package substrate core, and one or more input/output (I/O) optical fibers coupled with the package substrate core or coupled with the build-up dielectric layer, or combinations thereof, the one or more I/O optical fibers to guide I/O optical signals to and from the package substrate wherein the one or more I/O optical fibers allow both input and output optical signals to travel through the one or more I/O optical fibers.

Abstract: CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate, an epitaxial layer above the substrate, and a plurality of pixels extending into the epitaxial layer for receiving light. The image sensor also includes at least one of a horizontal barrier layer between the substrate and the epitaxial layer for preventing carriers generated in the substrate from moving to the epitaxial layer, and a plurality of lateral barrier layers between adjacent ones of the plurality of pixels for preventing lateral diffusion of electrons in the epitaxial layer.

Abstract: An LED package frame includes an LED chip and a heat conductive member made of high heat conductivity material. The heat conductive member has a receiving part at a lateral portion, and is mounted with the LED chip. A lead-coating assembly configured to be inserted into the receiving part of the heat conductive member, including a lead is inserted at one end into the receiving part of the heat conductive member, and electrically connected to the LED chip. An electrically insulating layer is placed in tight contact between the lead and the receiving part of the heat conductive member isolates the lead from the receiving part. With the lead inserted into the heat conductive member, it is possible to reduce size while maintaining high heat conductivity and stability.

Abstract: A small-sized and high-efficiency light emitting device capable of easily emitting green light includes a resonator including a photonic crystal having a refractive-index periodic structure and a point defect member formed in the photonic crystal to disturb the refractive-index periodic structure, and an active member provided inside the resonator and formed by an In containing nitride semiconductor, wherein a wavelength determined by a band gap energy of the active member is included in a photonic band gap range of the photonic crystal, and is set to be shorter than a peak wavelength at a shortest-wavelength side of a resonance mode of the resonator in the photonic band gap range.

Abstract: An optocoupler package is disclosed. The package includes a substrate comprising a substrate surface, a first device, and a clip structure attached to the first device. The clip structure and the first device are mounted on the substrate, and the first device is oriented at an angle with respect to the substrate surface. A second device is mounted on the substrate, where the first device is capable of communicating with the second device.

Abstract: An integrated circuit package includes an integrated circuit die 1 having a plurality of optical elements 5 sensitive to and/or capable of generating light, whereby data communication to circuitry of the integrated circuit die can be effected using a data channels implemented using the plurality of elements. The data channels are along optical pathways provided by an adapter unit 17 mounted on a PCB 19. The adapter unit 17 forms the optical pathways between optical fibers 23 and the respective optical element 5. Thus, there is no requirement to implement expensive wire-bonding as part of the packaging process.

Abstract: It is an object of the present invention to provide a light emitting device having a structure wherein oxygen and moisture are prevented from reaching to the light emitting device, and to provide a manufacturing method thereof. It is another object of the present invention to seal a light emitting device in fewer steps without encapsulating a desiccant. The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.

Abstract: The present invention provides in one embodiment a light emitting device that has a high efficacy even in a range of low color temperatures, a long-term reliability, and an improved color rendering property. In addition, the present invention provides in another embodiment a lighting apparatus using such a light emitting device. In the light emitting device, a mixture of a first phosphor material that emits yellow green, yellow or yellow orange light and a second phosphor material that emits light having a longer wavelength than the first phosphor material, for example, yellow orange or orange light is used as a phosphor. The first phosphor material is represented by a general formula Cax(Si, Al)12(O, N)16:Euy2+ and a main phase thereof has an alpha-SiAlON crystal structure.

Abstract: A die package is disclosed. The die package includes a substrate, a first device attached to the substrate, and a leadframe structure attached to the substrate. The leadframe structure includes a portion disposed over the first device, and a second device is attached to the first portion of the leadframe structure.

Abstract: A display device according to the present invention comprises an insulating substrate; a switching thin film transistor formed on the insulating substrate for receiving a data voltage has a first semiconductor layer comprising amorphous silicon; a driving thin film transistor formed on the insulating substrate, having a control terminal connected with an output terminal of the switching thin film transistor and includes a second semiconductor layer comprising poly silicon; a light sensor formed on the insulating substrate and comprises a third semiconductor layer and a sensor input terminal and a sensor output terminal electrically connected with the third semiconductor layer; an insulating layer formed on the light sensor; a first electrode formed on the insulating layer and electrically connected with an output terminal of the driving thin film transistor; an organic layer formed on the first electrode and comprises a light emitting layer; a second electrode formed on the organic layer; and a controller whi

Abstract: A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal stresses arise as a result of temperature changes during processing and during operation and on account of the different expansion coefficients of the semiconductor and carrier substrate. The carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated for sufficiently to ensure that the component does not fail.

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device can include a first wafer including a light emitting diode (LED), a second wafer including a flash cell formed corresponding to the LED, and a conductive via that electrically connects the first wafer to the second wafer.

Abstract: A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A signal collector is connected to the first photosensitive region. At least one switching device is for switching the at least one additional photosensitive region between the first voltage reference and a second voltage reference that is less than the first voltage reference, and for reversibly connecting the at least one additional photosensitive region to the signal collector so that the photosensor is variably responsive to different light levels.

Abstract: Disclosed are various embodiments of an infrared proximity sensor package comprising an infrared transmitter die, an infrared receiver die, a housing comprising outer sidewalls, a first recess, a second recess and a partitioning divider disposed between the first and second recesses. The transmitter doe is positioned in the first recess, the receiver die is positioned within the second recess, and at least the partitioning divider of the housing comprises liquid crystal polymer (LCP) such that infrared light internally-reflected within the housing in the direction of the partitioning divider is substantially attenuated or absorbed by the LCP contained therein.

Abstract: The invention provides an organic electroluminescent device and a method of manufacturing the same which conveniently reduce or suppress the transfer of ionic impurities into a light-emitting layer, and reduce or prevent the light-emitting property in the light-emitting layer from degrading, which promotes life extension. An organic electroluminescent device includes a functional layer having at least a light-emitting layer between a first electrode and a second electrode. At least a part of the functional layer is formed of the inorganic ion exchange material added to the functional material to form the functional layer.

Abstract: An LED includes a substrate having a substantially flat substrate surface, a plurality of electrodes extending through the substrate, an LED chip configured for emitting light, a first and a second coplanar reflective layers formed on the surface, and a light pervious encapsulation member mounted on the substrate surface. The light pervious encapsulation member covers the LED chip and the first reflective layer and a portion of the second reflective layer. The LED chip is mounted on the substrate surface and electrically connected with the electrodes. The first reflective layer and the second reflective layer are configured for reflecting the light emitted from the LED chip.

Abstract: An package such as an optocoupler package is disclosed. The optocoupler package includes a leadframe structure comprising a first die attach pad comprising a first die attach pad surface and a second die attach pad with a second die attach pad surface. The optocoupler package further has an optical emitter device on the first die attach pad, and an optical receiver device on second die attach pad. The optical receiver device is oriented at an angle with respect to the optical emitter device, and an optically transmissive medium is disposed between the optical emitter device and the optical receiver device.

Abstract: An electro-optical device includes a substrate, a plurality of self-emitting elements formed in the substrate, a sealing member attached to the substrate so as to seal the self-emitting elements in cooperation with the substrate, and a circuit that is disposed to overlap the sealing member and that drives or controls the self-emitting elements.

Abstract: A semiconductor light emitting module is provided with a supporting conductor including a die bonding pad, and with a plurality of semiconductor light emitting elements bonded to the die bonding pad. The semiconductor light emitting elements are arranged in series along an arrangement line extending in a first direction. The die bonding pad includes a portion overlapping alternative die-bonding positions which are symmetrical to positions of the bonded semiconductor light emitting elements with respect to a line of symmetry extending in a second direction different from the first direction.

Abstract: Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based electronic device including an element including at least a portion of the monocrystalline silicon layer.

Abstract: Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

Abstract: A light emitting diode (LED) package and process of making the same includes a silicon-on-insulator (SOI) substrate that is composed of two silicon based materials and an insulation layer interposed therebetween. The two silicon based materials of silicon-on-insulator substrate are etched to form a reflective cavity and an insulation trench, respectively, for dividing the silicon-on-insulator substrate into contact surfaces of positive and negative electrodes. A plurality of metal lines are then formed to electrically connect the two silicon based materials such that the LED chip can be mounted on the reflective cavity and electrically connected to the corresponding electrodes of the silicon-on-insulator substrate by the metal lines. Thus the properties of heat resistance and heat dispersal can be improved and the process can be simplified.

Abstract: A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0V by using such a Schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.

Abstract: A method for manufacturing a light emitting chip package includes bonding a patterned metal plate having at least a thermal enhanced plate and many contacts around the same to a substrate and bonding a film-like circuit layer to the patterned metal plate. Many conductive wires are formed to connect the film-like circuit layer and the contacts. Thereafter, at least a first molding is formed on the substrate to encapsulate the patterned metal plate, the conductive wires and a portion of the film-like circuit layer. At least one light emitting chip disposed on the film-like circuit layer exposed by the first molding has many bumps to which the light emitting chip and the film-like circuit layer are electrically connected. A cutting process is performed to form at least one light emitting chip package, and the substrate is removed. Therefore, heat dissipation efficiency of the light emitting chip package can be improved.

Abstract: A semiconductor optical device (e.g. a resonant cavity device in this form of an LED or a laser) comprises a single substrate arranged for emitting light (O) for incidence on a sample or other element and also responsive to light (D), e.g. of a different wavelenght, received back from this sample or other element: the device further comprises means for monitoring a characteristic (e.g. its current-voltage characteristic) which varies in dependence upon the light (D) received back from the sample or other element.

Abstract: An LED device is provided which comprises a plastic encapsulant 7 formed with an integrated cylindrical lens 8 disposed opposite to an LED chip 5 to provide light from LED chip 5 with the wider directivity angular range in the vertical Y irradiative direction than that in the horizontal X irradiative direction. When light from LED chip 5 is irradiated through cylindrical lens 8 out of plastic encapsulant 7, an outer surface of cylindrical lens 8 serves to transform light from LED chip 5 into a substantially parallel light beam which has a generally linear beam section wider in the directivity angular range of the necessary vertical Y irradiative direction, and narrower in the directivity angular range of the unnecessary horizontal X irradiative direction.

Abstract: The present invention provides a receiving optical subassembly (ROSA) with a co-axial shape and a stem for mounting semiconductor devices thereon that improves the high frequency performance of the ROSA. The ROSA mounts a photodiode (PD) and a pre-amplifier on a stem and the stem has a hollow the PD and the pre-amplifier are mounted therein. Since the hollow has a depth substantially equal to a thickness of the pre-amplifier, the bonding wire from the pre-amplifier to the surface of the stem may become shortest to reduce the parasitic inductance of the bonding wire and to enhance the high frequency performance of the ROSA.

Abstract: The present invention relates to a light emitting diode (LED) module (10) comprising a substrate (12) having plural indents (14) and flattish portions (20) in between the indents, and LEDs (16) mounted in the indents. The LED module is characterized by at least one of sensors (22) and additional LEDs (32) provided at the flattish portions. This allows increased sensor detection accuracy and/or color compensation. The present invention also relates to a method for the manufacturing of such an LED module.

Abstract: A light-emitting device (200) has a submount (100) and a plate for heat transfer (300) having a metallic plate (30). The submount (100) has a mount base (10), at least one light-emitting diode chip (5) mounted thereon and electrically conducting lines (12-17) formed on the mount base (10) to be connected electrically to the light-emitting diode chip (5). A first plane (11) of the mount base (10) of the submount (100) is bonded thermally to the first plate (300). For example, the plate is a circuit board having a metallic plate (30), and the submount (100) is bonded thermally to the metallic plate (30) of the one of the at least one plate (300). In an example, a second plate for heat transfer is also bonded thermally to a second plane of the mount base (100) for providing a plurality of heat transfer paths.