Active Layer Of Indirect Band Gap Semiconductor Patents (Class 257/86)
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Patent number: 8278667Abstract: According to an aspect of the invention, a light-emitting element includes a semiconductor layer, a gold electrode layer, an insulator, a barrier metal layer, and an aluminum wiring layer. The gold electrode layer is formed on a part of the semiconductor layer and is electrically connected to the semiconductor layer. The gold electrode layer being made of metal including gold. The insulator film covers the semiconductor layer and has a contact opening corresponding to the gold electrode layer. The barrier metal layer covers a an upper face of the gold electrode layer and the insulator film in a vicinity of the contact opening. The aluminum wiring layer is formed on the barrier metal layer and electrically connected to the barrier metal layer.Type: GrantFiled: February 8, 2010Date of Patent: October 2, 2012Assignee: Fuji Xerox Co., Ltd.Inventors: Michiaki Murata, Shuichi Yamada, Hiroyuki Usami, Takahiro Hashimoto
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Publication number: 20120241770Abstract: Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.Type: ApplicationFiled: March 26, 2012Publication date: September 27, 2012Inventors: Jong Ho NA, Se Hwan Sim, Chong Cook Kim, Jae In Yoon, Jong Pil Jeong, Jung Hyun Hwang, Dong Han Yoo
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Patent number: 8242480Abstract: A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.Type: GrantFiled: June 23, 2010Date of Patent: August 14, 2012Assignee: Massachusetts Institute of TechnologyInventors: Lionel C. Kimerling, Jifeng Liu, Jurgen Michel
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Patent number: 8237178Abstract: A light-emitting device includes a base and a light-emitting element that is disposed on the base. The light-emitting element is made up of a plurality of semiconductor layers including a light-emitting layer, and at the same time, is covered with a wavelength converting portion that includes a wavelength converting material. The light-emitting layer emits primary light, and the wavelength converting material absorbs part of the primary light and emits secondary light. The luminance of the primary light emitted from the edge portion of the light extraction surface of the light-emitting device is higher than the luminance of the primary light emitted from the inner region located inside the edge portion, and the ratio of the primary light and the secondary light that are emitted from a light extraction surface of the wavelength converting portion is substantially uniform across the light extraction surface of the wavelength converting portion.Type: GrantFiled: June 13, 2011Date of Patent: August 7, 2012Assignee: Panasonic CorporationInventor: Hideo Nagai
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Patent number: 8237151Abstract: In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.Type: GrantFiled: January 8, 2010Date of Patent: August 7, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Anthony J. Lochtefeld
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Patent number: 8212265Abstract: Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.Type: GrantFiled: July 28, 2011Date of Patent: July 3, 2012Assignee: LG Innotek Co., Ltd.Inventors: Dae Seob Han, Yong Tae Moon
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Patent number: 8188487Abstract: A surface emitting laser includes a lower multilayer mirror, an active layer, and an upper multilayer mirror stacked onto a substrate. A first current confinement layer having a first electrically conductive region and a first insulating region is formed above or below the active layer using a first trench structure. A second current confinement layer having a second electrically conductive region and a second insulating region is formed above or below the first current confinement layer using a second trench structure. The first and second trench structures extend from a top surface of the upper multilayer mirror towards the substrate such that the second trench structure surrounds the first trench structure. When the surface emitting laser is viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region.Type: GrantFiled: July 15, 2010Date of Patent: May 29, 2012Assignee: Canon Kabushiki KaishaInventor: Mitsuhiro Ikuta
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Patent number: 8183577Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.Type: GrantFiled: June 30, 2009Date of Patent: May 22, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Sungsoo Yi, Nathan F. Gardner, Qi Laura Ye
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Patent number: 8174028Abstract: A semiconductor composite apparatus includes a substrate and a planarizing layer, and a semiconductor thin film. The planarizing layer is formed on the substrate either directly or indirectly. The planarizing layer includes a first surface that faces the substrate, and a second surface that is on the side of the planarizing layer remote from the substrate. The semiconductor thin film formed on the planarizing layer. The second surface has a roughness of not more than 5 nm.Type: GrantFiled: October 12, 2010Date of Patent: May 8, 2012Assignee: Oki Data CorporationInventors: Mitsuhiko Ogihara, Masataka Muto, Tomoki Igari, Takahito Suzuki
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Patent number: 8154008Abstract: A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.Type: GrantFiled: July 24, 2008Date of Patent: April 10, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung Hoon Lee, Ki Bum Nam, Dae Sung Kal
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Patent number: 8138518Abstract: A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a current distribution modifying layer, a first electrode and a second electrode. The active layer and the second semiconductor layer form a mesa structure and expose a part of the first semiconductor layer. The current distribution modifying layer is disposed on the second semiconductor layer. The first electrode is disposed on and electrically connected to the first semiconductor layer exposed by the mesa structure. The second electrode is disposed on the current distribution modifying layer and is electrically connected to the second semiconductor layer. The LED has superior light emitting efficiency.Type: GrantFiled: April 7, 2009Date of Patent: March 20, 2012Assignee: Industrial Technology Research InstituteInventors: Yao-Jun Tsai, Jinn-Kong Sheu, Hsi-Hsuan Yen, Hung-Lieh Hu
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Patent number: 8134174Abstract: A light-emitting diode and a method for manufacturing the same are described. The light-emitting diode includes a bonding substrate, a first conductivity type electrode, a bonding layer, an epitaxial structure, a second conductivity type electrode, a growth substrate and an encapsulant layer. The first conductivity type electrode and the bonding layer are respectively disposed on two surfaces of the bonding substrate. The epitaxial structure includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A trench is set around the epitaxial structure and extends from the second conductivity type semiconductor layer to the first conductivity type semiconductor layer. The second conductivity type electrode is electrically connected to the second conductivity type semiconductor layer. The growth substrate is disposed on the epitaxial structure and includes a cavity exposing the epitaxial structure and the trench.Type: GrantFiled: March 11, 2010Date of Patent: March 13, 2012Assignee: Chi Mei Lighting Technology Group.Inventors: Kuohui Yu, Chienchun Wang, Changhsin Chu, Menghsin Li
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Patent number: 8129727Abstract: A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second electrode; an electrostatic protection unit including a plurality of compound semiconductor layer under the first insulating layer; a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit; and a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer.Type: GrantFiled: July 23, 2009Date of Patent: March 6, 2012Assignee: LG Innotek Co., Ltd.Inventor: Hwan Hee Jeong
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Patent number: 8120019Abstract: An organic light-emitting element has an anode, a cathode, and a layer including an organic compound between the anode and the cathode. The layer including the organic compound has at least one tetracyano compound represented by at least one of Formula (1) or (2) below. In Formula (1), R1 to R4 are each a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted aromatic group, a nitro group, or a cyano group. In Formula (2), n represents an integer of 1 to 2, Mn+ is a metal ion or an onium cation, and R1 to R4 are as defined in formula (1).Type: GrantFiled: December 15, 2008Date of Patent: February 21, 2012Assignee: Canon Kabushiki KaishaInventors: Koichi Nakata, Kazunori Ueno, Koichi Suzuki
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Patent number: 8110838Abstract: Light-emitting devices (e.g., LEDs) and methods associated with such devices are provided. In some embodiments, the device includes a distribution of light-generating portions (including active regions) that are spatially localized and separated (e.g., horizontally or vertically) from one or more patterned light extraction portions. This arrangement can allow light generated by the device to propagate and pass through regions of low absorption (e.g., light-extraction portions) rather than in regions of high absorption (e.g., light-generating portions), which can enhance light emission.Type: GrantFiled: December 8, 2006Date of Patent: February 7, 2012Assignee: Luminus Devices, Inc.Inventors: Alexander L. Pokrovskiy, Michael Lim, Nikolay I. Nemchuk, Alexei A. Erchak, Milan Singh Minsky
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Patent number: 8101957Abstract: An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has a cladding region, an optical waveguide layer and a low thermal conductivity layer. The optical waveguide layer is provided in the cladding region and has a refractive index higher than that of the cladding region. The low thermal conductivity layer is provided between the optical waveguide layer and the semiconductor substrate and has a thermal conductivity lower than that of the cladding region.Type: GrantFiled: March 27, 2007Date of Patent: January 24, 2012Assignee: Eudyna Devices Inc.Inventor: Tsutomu Ishikawa
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Patent number: 8079527Abstract: The fabrication method comprises a step of exposing at least one organic diode to a gas, before packaging of the device, to form a plurality of randomly distributed black spots by impairment. Increasing the exposure time enables the size of the black spots to be increased, also randomly. The surface distribution of the black spots, visible by electroluminescence, enables an object associated with this distribution to be identified in reliable manner.Type: GrantFiled: December 5, 2008Date of Patent: December 20, 2011Assignee: Commisariat A l'Energie Atomique et Aux Energies AlternativesInventor: Tony Maindron
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Patent number: 8067303Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.Type: GrantFiled: September 12, 2007Date of Patent: November 29, 2011Assignee: Partial Assignment University of Central FloridaInventors: Nathaniel R. Quick, Aravinda Kar
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Patent number: 8053789Abstract: There is provided a method of fabricating a vertical light emitting diode.Type: GrantFiled: December 12, 2007Date of Patent: November 8, 2011Assignee: Seoul Opto Device Co., Ltd.Inventors: Yeo Jin Yoon, Chang Yeon Kim
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Patent number: 8049410Abstract: An organic light emitting display including: a substrate having a center region; a pixel unit on the substrate and at the center region of the substrate; a non-pixel unit on the substrate and at an external circumference of the pixel unit; a ground ring in the non-pixel unit; a mother substrate wiring line on the substrate and at the external circumference of the ground ring; and a connection wiring line for electrically connecting the ground ring and the mother substrate wiring line to each other.Type: GrantFiled: July 23, 2008Date of Patent: November 1, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Misook Suh, Heyjin Shin
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Patent number: 8044413Abstract: In order to produce a powerful bass, bass boxes require a relatively large installation volume, for which insufficient space is frequently available in the interior of a motor vehicle, in particular in a passenger motor vehicle. When drivers and front-seat passengers require the sound installation to have a powerful bass, a bass box requires a volume in the order of magnitude of at least 10 to 15 liters. In order to restrict the physical space which is required for this purpose in the vehicle interior, the active sound transducer of the loudspeaker system is acoustically coupled on its rear face to a resonant area which is formed at least in parts by the cavity within a supporting structure of the vehicle.Type: GrantFiled: February 15, 2006Date of Patent: October 25, 2011Assignee: Daimler AGInventors: Rainer Albus, Norbert Niemczyk
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Patent number: 8030668Abstract: A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of waveguide thereof are provided. The light emitting diode of the invention comprises a first electrode for implanting electrons, a second electrode for implanting holes, and a light emitting section electrically connected to the first and the second electrode, wherein the light emitting section is made out of single crystalline silicon and has a first surface and a second surface facing the first surface, wherein with respect to plane orientation (100) of the first and second surfaces, the light emitting section crossing at right angles to the first and second surfaces is made thinner, and wherein a material having a high refractive index is arranged around the thin film section.Type: GrantFiled: November 6, 2007Date of Patent: October 4, 2011Assignee: Hitachi, Ltd.Inventors: Digh Hisamoto, Shinichi Saito, Shinichiro Kimura
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Patent number: 8008673Abstract: A light-emitting device 1 includes a base 2 and a light-emitting element 3 that is disposed on the base 2. The light-emitting element 3 is made up of a plurality of semiconductor layers including a light-emitting layer, and at the same time, is covered with a wavelength converting portion 4 that includes a wavelength converting material. The light-emitting layer emits primary light, and the wavelength converting material absorbs part of the primary light and emits secondary light. The luminance of the primary light emitted from the edge portion of the light extraction surface of the light-emitting device 3 is higher than the luminance of the primary light emitted from the inner region located inside the edge portion, and the ratio of the primary light and the secondary light that are emitted from a light extraction surface 6 of the wavelength converting portion 4 is substantially uniform across the light extraction surface 6 of the wavelength converting portion 4.Type: GrantFiled: August 1, 2008Date of Patent: August 30, 2011Assignee: Panasonic CorporationInventor: Hideo Nagai
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Patent number: 7999270Abstract: The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.Type: GrantFiled: November 15, 2006Date of Patent: August 16, 2011Assignee: Epivalley Co., Ltd.Inventors: Eun Hyun Park, Tae-Kyung Yoo
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Patent number: 7994519Abstract: A semiconductor chip (1) comprises a semiconductor body (2) having a semiconductor layer sequence having an active region (23) provided for generating radiation. A contact (4) is arranged on the semiconductor body (2). An injection barrier (5) is formed between the contact (4) and the active region (23). A method for producing a semiconductor chip is also disclosed.Type: GrantFiled: July 14, 2008Date of Patent: August 9, 2011Assignee: OSRAM Opto Semiconductors GmbHInventors: Michael Fehrer, Uwe Strauss
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Patent number: 7994520Abstract: Disclosed are a semiconductor light emitting device comprising a single crystalline buffer layer and a manufacturing method thereof. The semiconductor light emitting device comprises a single crystalline buffer layer, and a compound semiconductor structure comprising III and V group elements on the single crystalline buffer layer.Type: GrantFiled: November 24, 2008Date of Patent: August 9, 2011Assignee: LG Innotek Co., Ltd.Inventor: Kyong Jun Kim
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Patent number: 7989832Abstract: Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.Type: GrantFiled: September 17, 2007Date of Patent: August 2, 2011Assignee: LG Innotek Co., LtdInventor: Kyong Jun Kim
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Patent number: 7982206Abstract: A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.Type: GrantFiled: May 12, 2010Date of Patent: July 19, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshiji Hamatani, Toru Takayama
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Patent number: 7981328Abstract: Electron transport material and methods of N-type doping the same are provided.Type: GrantFiled: June 22, 2007Date of Patent: July 19, 2011Assignees: Georgia Tech Research Corporation, The Trustees of Princeton UniveristyInventors: Antoine Kahn, Calvin Chan, Stephen Barlow, Seth Marder
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Patent number: 7960743Abstract: The invention relates to a broad-band light emitting diode having an active layer composed of a plurality of light emission regions of differing materials for emitting light at a plurality of wavelengths, wherein each of the emission regions of the active layer is electrically controlled by a separate electrode for providing a broad-band emission or optical gain with a multi-point control of its spectral profile.Type: GrantFiled: December 5, 2008Date of Patent: June 14, 2011Assignee: JDS Uniphase CorporationInventor: Pierre Doussiere
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Patent number: 7943963Abstract: The present invention provides a top emission type organic light-emitting display device in a production of which it is possible to prevent the organic film from being oxidized when the upper transparent electrode is formed, and which is capable of emitting light at a low voltage. This organic light-emitting display device contains an organic light-emitting layer and an upper electrode and a lower electrode sandwiching the organic light-emitting layer, and is of a structure in which the emitted light is taken out from the upper electrode side, and a buffer layer mainly made of an oxide producing less oxygen by decomposition in the film-forming process than the upper electrode material is provided between the organic light-emitting layer and the upper electrode.Type: GrantFiled: February 10, 2005Date of Patent: May 17, 2011Assignee: Hitachi Displays, Ltd.Inventors: Hajime Murakami, Masao Shimizu, Sukekazu Aratani, Etsuko Nishimura, Masahiro Tanaka
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Patent number: 7939834Abstract: A light-emitting device includes a substrate having an epitaxial-forming surface and a back surface opposite to the epitaxial-forming surface, the substrate being formed with a recess indented from the back surface, the back surface having a recessed portion that defines the recess, and a planar portion extending outwardly from the recessed portion; an epitaxy layer; a continuous heat-dissipating layer formed on the planar portion and the recessed portion of the back surface of the substrate; and first and second electrodes coupled electrically to the epitaxy layer.Type: GrantFiled: May 23, 2008Date of Patent: May 10, 2011Assignee: Chi Mei Lighting Technology CorporationInventors: Shi-Ming Chen, Chang-Hsin Chu
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Publication number: 20110095309Abstract: Semiconductor devices including a light emitting layer, and at least one surface plasmon metal layer in contact with the light emitting layer are provided. The light emitting layer includes an active layer having a first band gap, and one or more barrier layers having a second band gap. The first band gap is smaller than the second band gap. Methods for fabricating semiconductor devices are also provided.Type: ApplicationFiled: October 27, 2009Publication date: April 28, 2011Applicant: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATIONInventor: Doyeol AHN
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Patent number: 7919769Abstract: An exemplary illuminator includes a first electrode, a second electrode, and a light-emitting chip. The light-emitting chip includes light-emitting layers arranged three-dimensionally. The first and second electrodes are configured for providing different voltages to the light-emitting chip, and the light-emitting chip is capable of emitting light simultaneously along all dimensional axes.Type: GrantFiled: July 21, 2008Date of Patent: April 5, 2011Assignees: Innocom Technology (Shenzhen) Co., Ltd., Chimei Innolux CorporationInventors: Yong-Shan Liu, Xiao-Hai Zheng
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Patent number: 7919784Abstract: One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.Type: GrantFiled: September 29, 2006Date of Patent: April 5, 2011Assignee: Lattice Power (Jiangxi) CorporationInventors: Fengyi Jiang, Li Wang, Wenqing Fang
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Publication number: 20110068716Abstract: A semiconductor light emitting device (10) comprises a semiconductor structure (12) comprising a first body (14) of a first semiconductor material (in this case Ge) comprising a first region of a first doping kind (in this case n) and a second body (18) of a second semiconductor material (in this case Si) comprising a first region of a second doping kind (in this case p). The structure comprises a junction region (15) comprising a first heterojunction (16) formed between the first body (14) and the second body (18) and a pn junction (17) formed between regions of the structure of the first and second doping kinds respectively. A biasing arrangement (20) is connected to the structure for, in use, reverse biasing the pn junction, thereby to cause emission of light.Type: ApplicationFiled: January 30, 2009Publication date: March 24, 2011Inventors: Lukas Willem Snyman, Monuko Du Plessis
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Patent number: 7892874Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: GrantFiled: June 30, 2009Date of Patent: February 22, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Patent number: 7888154Abstract: To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH3-rich condition. The TMAl pulsed supply sequence includes growing an AlGaN layer for 10 seconds, interrupting the growth for 5 seconds to remove NH3, and then introducing TMAl at a flow rate of 1 sccm for 5 seconds. After that, the growth is interrupted again for 5 seconds. Defining this sequence as one growth cycle, five growth cycles are carried out. By such growth, an AlGaN layer having a polarity of richness in Al can be obtained. The above sequence is described only for illustrative purposes, and various variations are possible. In general, the Al polarity can be achieved by a process of repeating both growth interruption and supply of an Al source.Type: GrantFiled: February 11, 2010Date of Patent: February 15, 2011Assignee: RikenInventors: Hideki Hirayama, Tomoaki Ohashi, Norihiko Kamata
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Patent number: 7863628Abstract: Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.Type: GrantFiled: February 14, 2008Date of Patent: January 4, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Byoung Lyong Choi, Kyung Sang Cho, Eun Kyung Lee, O Gweon Seo
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Patent number: 7847298Abstract: A semiconductor composite apparatus includes a substrate and a planarizing layer, and a semiconductor thin film. The planarizing layer is formed on the substrate either directly or indirectly. The planarizing layer includes a first surface that faces the substrate, and a second surface that is on the side of the planarizing layer remote from the substrate. The semiconductor thin film formed on the planarizing layer. The second surface has a roughness of not more than 5 nm.Type: GrantFiled: February 27, 2006Date of Patent: December 7, 2010Assignee: Oki Data CorporationInventors: Mitsuhiko Ogihara, Masataka Muto, Tomoki Igari, Takahito Suzuki
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Patent number: 7821017Abstract: The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer.Type: GrantFiled: April 20, 2009Date of Patent: October 26, 2010Assignee: HUGA Optotech Inc.Inventors: Chi-Shen Lee, Su-Hui Lin
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Patent number: 7816701Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.Type: GrantFiled: June 23, 2008Date of Patent: October 19, 2010Assignee: LG Innotek Co., Ltd.Inventor: Kyung Jun Kim
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Patent number: 7791081Abstract: A radiation-emitting semiconductor chip is specified, comprising a semiconductor body (3) having an n-conducting region (4) and a p-conducting region (5), the semiconductor body having a hole barrier layer containing a material from the material system InyGa1-x-yAlxN.Type: GrantFiled: July 28, 2006Date of Patent: September 7, 2010Assignee: Osram Opto Semiconductors GmbHInventors: Matthias Peter, Uwe Strausse, Matthias Sabathil
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Publication number: 20100207549Abstract: Visible and infrared light sources on silicon that have several attractive properties with respect to integrated optics. First, the devices are operational at room temperature and strictly require no thermal processing in their synthesis (although low temperature annealing can be used to form Ohmic contacts). These devices could therefore be included at any stage of chip fabrication. The special ease of synthesis of these silicon LEDs enables simple fabrication of surface structures such as patterned emitters and photonic crystal surfaces that enhance light emission in the forward direction. The LEDs are color-switchable—by reversing the current one can switch from infrared emission to visible emission. The lifetime of the luminescence is much shorter than the standard carrier recombination time in silicon, suggesting direct modulation of the emitted light.Type: ApplicationFiled: September 10, 2008Publication date: August 19, 2010Applicant: THE GOVERNORS OF THE UNIVERSITY OF ALBERTAInventors: Al Meldrum, Sulan Kuai
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Patent number: 7772600Abstract: Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type compound semiconductor layer is contacted to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode together with the P-type silicon substrate. Further, a second N-type compound semiconductor layer is positioned on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is spaced apart from the first N-type compound semiconductor layer. Meanwhile, a P-type compound semiconductor layer is positioned on the second N-type compound semiconductor layer, and an active layer is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.Type: GrantFiled: March 20, 2007Date of Patent: August 10, 2010Assignee: Seoul Opto Device Co., Ltd.Inventors: Duck Hwan Oh, Sang Joon Lee, Kyung Hae Kim
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Patent number: 7759139Abstract: A method for manufacturing a silicon device includes steps of: forming a silicon layer 4a that indicates a second conductivity type on a first surface S1a of a silicon substrate 2a that indicates a first conductivity type; and exposing, after the step, a third surface S3a of the silicon layer 4a for a period of a minimum of 30 minutes and a maximum of 6 hours to an argon-containing atmosphere which is adjusted to temperatures of a minimum of 400° C. and a maximum of 900° C. and pressures of a minimum of 4 MPa and a maximum of 200 MPa.Type: GrantFiled: August 22, 2007Date of Patent: July 20, 2010Assignee: Hamamatsu Photonics K.K.Inventors: Shucheng Chu, Hirofumi Kan
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Patent number: 7750352Abstract: Light strips for emergency lighting, path lighting, accent lighting and device lighting are provided. Devices incorporating and lighted by the light strips are also provided. The light strips include a light emitting layer made from a plurality of semiconductor nanoparticles disposed between and in electrical communication with an anode and a cathode. The semiconductor nanoparticles may be made from Group IV semiconductors, such as silicon. Devices that may be lit with the light strips include displays and keypad, such as those found in cellular phones and personal digital assistants.Type: GrantFiled: August 10, 2005Date of Patent: July 6, 2010Assignee: Pinion Technologies, Inc.Inventor: Paul Thurk
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Patent number: 7745837Abstract: The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.Type: GrantFiled: December 7, 2007Date of Patent: June 29, 2010Assignee: Huga Optotech Inc.Inventor: Tzong-Liang Tsai
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Patent number: 7719012Abstract: A light-emitting device includes a light-emitting element and a light-guiding member for causing light from the light-emitting element entering into it through one surface thereof. The light-emitting element includes a lead member with a light-emitting element chip mounted thereon and a molded member to which the lead member is secured. The lead member has a metallic part extending from the molded member, and the metallic part is bent. The thus arranged light-emitting device has an excellent heat release capability. An image reading apparatus using the light-emitting device is also provided.Type: GrantFiled: March 24, 2006Date of Patent: May 18, 2010Assignees: Nippon Sheet Glass Company, Limited, Nichia CorporationInventors: Kunihito Sugimoto, Naofumi Sumitani, Masahide Wakisaka
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Patent number: RE43426Abstract: A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.Type: GrantFiled: June 2, 2011Date of Patent: May 29, 2012Assignee: Epistar CorporationInventors: Tse-Liang Ying, Shi-Ming Chen