Abstract: A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.

Abstract: Light emitting devices and methods are disclosed. In one embodiment a light emitting device can include a submount and a plurality of light emitting diodes (LEDs) disposed over the submount. At least a portion of the submount can include a reflective layer at least partially disposed below a solder mask. One or more layers within the submount may include one or more holes, a rough surface texture, or combinations thereof to improve adhesion within the device. The device can further include a retention material dispensed about the plurality of LEDs. Devices and methods are disclosed for improved solder mask adhesion.

Abstract: In a light emitting device, a first lead has a first terminal part that is contiguous with a first connector. The first terminal part includes a first convex part that is exposed from a molded article at the inner peripheral face of a mounting recess, and a first concave part that is formed in the rear face of the first convex part.

Abstract: An object of the present invention is to provide a light emitting device that has high output power and long service life where a package is suppressed from discoloring due to heat generation. The light emitting device 1 of the present invention contains a light emitting element 10, a package 40 formed of a thermosetting resin, the package having a recess 43 wherein the light emitting element 10 is mounted, a first lead electrode 20 which is exposed at the bottom of the recess 43 of the package 40 and whereon the light emitting element 10 is mounted, and a second lead electrode 30 which is exposed at the bottom of the recess 43 of the package 40 and is electrically connected to the light emitting element 10. The light emitting element 10 is bonded to the first lead electrode 20 through a eutectic layer 70, and at least a surface of the first electrode 20 is coated with an Ag film 22, a thickness of the Ag film 22 being in the range from 0.5 ?m to 20 ?m.

Abstract: A light emitting diode (LED) package may include a base, at least one light emitting die on the base, and a flextape on the base. The flextape includes at least one metal trace connected to the light emitting die. In a method of manufacturing the LED package, the base may be formed so as to include a basin and at least one light emitting die may be placed within the basin. The flextape may be provided to include at least one metal trace that is electrically connected to the light emitting die.

Abstract: A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (12), which contains an active, radiation-generating layer (14) and has a first main face (16) and a second main face (18)—remote from the first main face—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main face (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main face (18) of the multilayer structure is patterned one- or two-dimensionally with convex elevations (26).

Abstract: Disclosed is a semiconductor light emitting element (1) which includes: plural n-side columnar conductor portions (183), each of which is provided by penetrating a p-type semiconductor layer (160) and a light emitting layer (150), and is electrically connected to an n-type semiconductor layer (140); an n-side layer-like conductor portion (184), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the surface of the light emitting layer (150) when viewed from the light emitting layer (150), and is electrically connected to the n-side columnar conductor portions (183); plural p-side columnar conductor portions (173), each of which is electrically connected to the p-type semiconductor layer (160); and a p-side layer-like conductor portion (174), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the light emitting layer (150) when viewed from the light emitting layer (150), and is electrically connected to the p-side columnar conductor

Abstract: Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.

Abstract: A resin-attached lead frame includes a lead frame main body having a plurality of die pads (LED element resting portions) and a plurality of lead portions spaced from the die pads, the lead frame main body further including LED element resting regions each formed over an area including an upper surface of each of the die pads and an upper surface of each of the lead portions. A reflecting resin section surrounds each LED element resting region of the lead frame main body. A vapor-deposited aluminum layer or a sputtered aluminum layer is provided on respective upper surfaces of the LED element resting regions of the lead frame main body.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: Disclosed herein is an organic EL display device in which pixels each including an organic EL element formed by interposing an organic layer between an anode electrode and a cathode electrode are arranged in a matrix, the organic EL display device including: a common layer configured to be included in the organic EL element and be formed in the organic layer in common to the pixels; and a metal interconnect configured to surround periphery of the anode electrode and be electrically connected to the organic layer, wherein potential of the metal interconnect is set to a potential lower than potential of the anode electrode in a non-light-emission state of the organic EL element.

Abstract: An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source. The light-emitting-device includes plural light-emitting-units formed over a substrate, the light-emitting-units having a compound semiconductor thin-film crystal layer, first and second-conductivity-type-side electrodes, a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrodes are formed on the opposite side to the light-extraction direction. The light-emitting-units are electrically separated from each other by a light-emitting-unit separation-trench. An optical coupling layer is formed between the substrate and the first-conductivity-type semiconductor layer. The optical coupling layer is common to the plurality of light-emitting-units, and capable of optical coupling of the plurality of light-emitting-units and distributing a light to the entire light-emitting-device.

Abstract: In a light emitting device, a light emitting device unit, and a method for fabricating a light emitting device according to an embodiment of the present invention, a light emitting device (100) includes a substrate (131), a semiconductor light emitting element (121) disposed on the substrate (131), and a resistor (122) coupled to the semiconductor light emitting element (121). The resistor (122) is coupled in parallel to the semiconductor light emitting element (121). The resistor (122) has a resistance set at such a value that when a light emitting operation voltage for causing light emission of the semiconductor light emitting element (121) is applied to the semiconductor light emitting element (121), a current flowing through the resistor (122) is equal to or less than one-fiftieth of a current flowing through the semiconductor light emitting element (121).

Abstract: A luminous body comprises a transparent plastic moulding with indentations, and LED DIEs disposed within the indentations. One side of each LED DIE lies approximately flush with an upper side of the moulding, and each LED DIE is connected to an electricity supply via electrical conductors disposed on the moulding. A method for producing such a luminous body is also disclosed.

Abstract: A lead frame assembly includes a surrounding frame and a plurality of lead frame sets arranged in a matrix. Each lead frame set includes spaced-apart first and second lead frames and a connecting structure interconnecting one of the lead frame sets to an adjacent lead frame set. Each lead frame set is further connected to the surrounding frame through the connecting structure thereof. A plurality of insulated bars are spacedly formed on a lead frame panel. Each insulated bar covers a corresponding row of the lead frame sets and exposes bottom surfaces of the first and second lead frames. Each insulated bar further covers portions of the surrounding frame that are adjacent to two opposite outermost ones of the lead frame sets.

Abstract: Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.

Abstract: Pixels of a display device include a first substrate, an organic insulation layer disposed on the first substrate and having an upper surface formed in an uneven structure, an inorganic insulation layer disposed on the organic insulation layer and formed in the uneven structure, a first electrode disposed on the inorganic insulation layer and formed in the uneven structure, and a device to provide a data voltage to the first electrode, in which the first electrode includes a reflective electrode to reflect incident light.

Abstract: One object of the invention is to provide a display device that can display an image which causes a viewer less strain associated with viewing and gives a viewer a sense of great depth and an electronic device for enjoying the image. The present inventors have focused on a sense of depth obtained by monocular viewing and have conceived a display device in which pixels each include a light-emitting module capable of emitting light having a spectral line half-width of less than or equal to 60 nm in a response time of less than or equal to 100 ?s and are provided at a resolution of higher than or equal to 80 ppi; the NTSC ratio is higher than or equal to 80%; and the contrast ratio is higher than or equal to 500.

Abstract: The present invention relates to an LED light source and a corresponding backlight module. The LED light source includes a bar-shaped base and multiple LED assemblies. The LED assemblies each has an LED leadframe, a light-emitting chip, an anode bonding pad and a cathode bonding pad. The anode and cathode bonding pads are connected to the light-emitting chip and mounted on a bottom of the LED leadframe. By mounting the electrodes of the LED assembly on the bottom of the LED leadframe, the LED light source and the corresponding backlight module of the present invention prevents a technical problem that the electrodes of LED assemblies are easy to become short-circuited.

Abstract: For integration of light-emitting elements and for suppression of a voltage drop, plural stages of light-emitting element units provided over a substrate having an insulating surface and each including a plurality of light-emitting elements which is connected in parallel are connected in series. Further, besides a lead wiring with a large thickness, a plurality of auxiliary wirings with different widths and different thicknesses is used, and the arrangement of the wirings, electrodes of the light-emitting elements, and the like is optimized. Note that in the lighting device, light emitted from the light-emitting element passes through the substrate having an insulating surface and then is extracted.

Abstract: A semiconductor board includes a circuit board to which external electric power is supplied; a plurality of semiconductor elements which are supported on the circuit board; and a plurality of wires each of which is provided corresponding to each of a plurality of the semiconductor elements and each of which has one end electrically connected to the semiconductor element and the other end electrically connected to the circuit board. A plurality of the wires extend along a radial direction of a phantom circle having a center on the circuit board.

Abstract: A light-emitting module includes a supporting element, a number of optoelectronic semiconductor components mounted on the supporting element for the generation of electromagnetic radiation, and a metallic connecting layer by means of which the optoelectronic semiconductor components are supplied with operating voltage. An insulation layer is arranged in a region of the optoelectronic semiconductor components between the supporting element and the metallic connecting layer. The metallic connecting layer forms a light shade for the optoelectronic semiconductor components, so that the electromagnetic radiation is only emitted in a specified direction.

Abstract: An organic light-emitting display device is provided that has prolonged service life, lowered wiring resistance that can lower power consumption, and that is easy to manufacture. In a first embodiment, a moisture capturing layer is provided between an upper electrode and a lower electrode. A second embodiment includes a metal substrate, an organic light-emitting element on the substrate and an upper transparent electrode connected to the substrate through a contact hole. In a third embodiment, a method is provided for forming a first organic compound including a light-emitting layer, heating the first organic compound in vacuo, and forming a second organic compound.

Abstract: Solid state lighting (SSL) devices (e.g., devices with light emitting diodes) with reduced dimensions (e.g., thicknesses) and methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first region and a second region laterally spaced apart from the first region and an insulating material between and electrically isolating the first and second regions. The SSL device also includes a conductive material between the first and second regions and adjacent the insulating material to electrically couple the first and second regions in series.

Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first light extracting structure formed on an outer portion of the first conductive type semiconductor layer and having a plurality of side surfaces and a plurality of upper surfaces formed in a step structure, and a transmissive layer on the first light extracting structure of the first conductive type semiconductor layer.

Abstract: The present invention relates to a package structure for light-emitting diodes (LEDs). The package structure includes a substrate, a heat-dissipating structure disposed on the substrate, and a plurality of LED chips uniformly disposed on the heat-dissipating structure. The heat-dissipating structure has a central portion and at least one peripheral portion surrounding thereof. The central portion is capable of dissipating more heat than the peripheral portion. Thus, the temperature difference between the LED chips disposed on the central portion and the LED chips disposed on the peripheral portion can be reduced.

Abstract: A semiconductor light emitting module is provided with a supporting conductor including a die bonding pad, and with a plurality of semiconductor light emitting elements bonded to the die bonding pad. The semiconductor light emitting elements are arranged in series along an arrangement line extending in a first direction. The die bonding pad includes a portion overlapping alternative die-bonding positions which are symmetrical to positions of the bonded semiconductor light emitting elements with respect to a line of symmetry extending in a second direction different from the first direction.

Abstract: An exposure apparatus for a photosensitive film includes: light-emitting diodes for generating rays to expose a photosensitive film; a light shield positioned between the light-emitting diodes to prevent noise; a stage for receiving a substrate having the photosensitive film thereon; and a parallelizer positioned between the light-emitting diodes and the stage for redirecting the rays from the light-emitting diodes to be perpendicularly incident upon the photosensitive film.

Abstract: A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 ?m. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.

Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The reflective layer may be disposed under the compound semiconductor layer. The conductive support member may be disposed under the reflective layer. The channel layer may be disposed along a bottom edge of the compound semiconductor layer.

Abstract: An optoelectronic component includes a carrier element. At least two elements are arranged in an adjacent fashion on a first side of the carrier element. Each element has at least one optically active region for generating the electromagnetic radiation. The optoelectronic component has an electrically insulating protective layer arranged at least in part on a surface of the at least two adjacent elements which lies opposite the first side. The protective layer, at least in a first region arranged between the at least two adjacent elements, at least predominantly prevents a transmission of the electromagnetic radiation generated by the optically active regions.

Abstract: A radiation-emitting component includes a semiconductor chip which has a first main surface, a second main surface on an opposite side from the first main surface and an active region that generates radiation; a carrier on which the semiconductor chip is fixed on the side of the second main surface; an output layer arranged on the first main surface of the semiconductor chip and forming a lateral output surface spaced apart from the semiconductor chip in a lateral direction, a recess tapering in a direction of the semiconductor chip being, formed in the output layer and deflecting radiation emerging from the first main surface during operation into the direction of the lateral output surface.

Abstract: Provided is a light emitting diode (LED) lamp assembly having an increased light incidence angle by fixing unit LED lamps fixed on a substrate at various angles. The LED lamp assembly includes a substrate having a socket portion and an LED mounting portion, first unit LED modules installed on both surfaces of the substrate and irradiating light onto the both surfaces of the substrate in a frontward direction, and second unit LED modules irradiating light onto the both surface of the substrate in directions other than the frontward direction. In the LED lamp assembly, since first and second unit LED modules having light irradiation units formed at different positions are installed on both surfaces of a single substrate, light can be irradiated in a radial direction.

Abstract: An exemplary embodiment of the present disclosure provides a solid-state light emitting device. The solid-state light emitting device includes a stair-type bowl, a plurality of light emitting chips, and an encapsulation glue. The stair-type bowl includes a base and a ring stair structure. The ring stair structure includes a plurality of ring tread surfaces and a plurality of ring riser surfaces connected to the ring tread surfaces. The ring stair structure is connected to the base. The base has a bottom surface. The ring stair structure surrounds the bottom surface and protrudes from the bottom surface. The light emitting chips are respectively disposed above the ring tread surfaces and the bottom surfaces. The stair-type bowl is filled with the encapsulation glue. The encapsulation glue covers the light-emitting chips.

Abstract: There are provided a semiconductor unit that prevents connection failure caused by a wiring substrate to improve reliability, a method of manufacturing the semiconductor unit, and an electronic apparatus including the semiconductor unit. The semiconductor unit includes: a device substrate including a functional device and an electrode; a first wiring substrate electrically connected to the functional device through the electrode; and a second wiring substrate electrically connected to the functional device through the first wiring substrate.

Abstract: A defocused optic (110, 210) for mixing of light output from a multichip LED (101, 201). The defocused optic (110, 210) includes an outer reflector having a concave inner surface (122, 26, 222, 226) with a varied profile. The outer reflector surrounds an interior reflector (140, 240) having a convex surface (142, 242). The convex surface (142, 242) of the interior reflector (140, 240) is positioned to generally face a multichip LED (101, 201) and may optionally have a varied profile. Appropriate selection of the design parameters of the profiles of the concave inner surface(122, 126, 222, 226), the profile(s) of the convex surface (142, 242), and the rotational angular range over which said profiles are present enables appropriate mixing of the light output from a given multi-chip LED (101, 201).

Abstract: A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.

Abstract: Provided are a light-emitting device package and a method of manufacturing the same. The light-emitting device package may include a plurality of light-emitting chips on one substrate (board). The plurality of light-emitting chips may produce colors around a target color. The target color may be produced by combinations of the colors of light emitted from the plurality of light-emitting chips. The colors around the target color may have the same hue as the target color and have color temperatures different from that of the target color. The plurality of light-emitting chips may have color temperatures within about ±250K of that of the target color.

Abstract: Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an EL element. Hard carbon films are formed to cover a surface of the organic resin substrate and outer surfaces of a sealing member. Typically, DLC (Diamond like Carbon) films are used as the carbon films. The DLC films have a construction where carbon atoms are bonded into an SP3 bond in terms of a short-distance order, although the films have an amorphous construction from a macroscopic viewpoint. The DLC films contain 95 to 70 atomic % carbon and 5 to 30 atomic % hydrogen, so that the DLC films are very hard and minute and have a superior gas barrier property and insulation performance.

Abstract: A light emission package includes at least one solid state emitter, a leadframe, and a body structure encasing a portion of the leadframe. At least one aperture is defined in an electrical lead to define multiple electrical lead segments, with at least a portion of the aperture disposed outside an exterior side wall of the package. A recess may be defined in the exterior side wall to receive a bent portion of an electrical lead. A body structure cavity may be bounded by a floor, and side wall portions and end wall portions that are separated by transition wall portions including a curved or segmented upper edge, with different wall portions being disposed at different angles of inclination.

Abstract: A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Abstract: A light emitting diode (LED) package includes a LED package substrate, first LED chips and second LED chips. The LED package substrate includes a substrate, a first bonding pad, second bonding pads and a third bonding pad. The first, second and third bonding pads are disposed on the substrate. The second bonding pads are arranged in an array. The first and third bonding pads are located adjacent respectively to first and last column of the array. The first LED chips are die-bonded on the first bonding pad and wire-bonded respectively to the second bonding pads arranged in first column of the array. The second LED chips are die-bonded on the second bonding pads respectively. In each row except last column, each second LED chip is wire-bonded to the second bonding pad arranged in next column. The second LED chips located in last column are wire-bonded to the third bonding pad.

Abstract: A light-emitting diode comprises a light-emitting diode chip having a first semiconductor layer, a first electrode, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer and a second electrode formed on the second semiconductor layer. The first semiconductor layer, the active layer, the second semiconductor layer and the second electrode sequentially compose a stacked multilayer. A blind hole penetrates the second electrode, the second semiconductor layer, the active layer and inside the first semiconductor layer. The first electrode is disposed on the first semiconductor layer inside the blind hole. A first supporting layer and a second supporting layer are respectively disposed on the first electrode and the second electrode, wherein the first supporting layer and the second supporting layer are separated from each other. A method for manufacturing the light-emitting diode is also provided in the disclosure.

Abstract: A luminous body comprises a transparent plastic moulding with indentations, and LED DIEs disposed within the indentations. One side of each LED DIE lies approximately flush with an upper side of the moulding, and each LED DIE is connected to an electricity supply via electrical conductors disposed on the moulding. A method for producing such a luminous body is also disclosed.

Abstract: An LED package and a lead frame include a reflector cup having a bottom surface with an LED asymmetrically positioned on the bottom surface and a wall surface inclined relative to the bottom surface and defining an opening at an upper end thereof. The bottom surface of the reflector cup has a first axial dimension along a first axis and a second axial dimension along a second axis, orthogonal to the first axis. A display having an asymmetrical FFP and asymmetrical screen curve includes an array of the LED modules including a plurality of LED packages. At least some of the LED packages include a dome-shaped lens asymmetrically positioned with respect to a geometric center of the bottom surface of the reflector cup.

Abstract: An LED module 101 is provided with an LED chip 200 that includes a sub-mount substrate 210 made of Si and a semiconductor layer 220 laminated on the sub-mount substrate 210. The module also includes white resin 280 that does not transmit light from the semiconductor layer 220 and that covers at least part of a side of the sub-mount substrate 210, where the side is connected to the surface on which the semiconductor layer 220 is laminated. These arrangements enhance the brightness of the LED module 101.

Abstract: A semiconductor light source device is provided. The semiconductor light source device includes a light guide, at least one semiconductor light source set and at least one light transformation coupler. The light transformation coupler is disposed between the semiconductor light source set and the light guide for guiding the light emitted from the semiconductor light source set to the light guide. The light transformation coupler has an inclined surface and a curved surface. The inclined surface is a multi-level inclined surface with several slopes.

Abstract: A light emitting device includes a support member, a light emitting structure on the support member, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the second conductive type semiconductor layer and the first conductive type semiconductor layer, a first nitride semiconductor layer disposed on the second conductive type semiconductor layer, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and including an uneven structure, and a first electrode pad disposed on the light emitting structure wherein the second nitride semiconductor layer has an opening, the first electrode pad is in contact with the first nitride semiconductor layer through the opening, and the first nitride semiconductor layer has a work function smaller than that of the second nitride semiconductor layer.

Abstract: This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting efficiency of the active layer. This invention adopts the method to manufacture the light-emitting device, comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized by: re-designing the front contact, by reducing the width of a metallic pattern constructing fingers or Mesh lines and increasing the number of the fingers or Mesh lines, so as to resolve the current crowding problem.