Abstract: A light emitting device including a light emitting structure including a plurality of light emitting parts, a dielectric structure disposed outside the light emitting structure, and a plurality of pads disposed on a first surface of the light emitting structure and electrically coupled with the light emitting parts, in which outer sidewalls of the pads are disposed inside an outer sidewall of the light emitting structure and an outer sidewall of the dielectric structure, at least one of the pads extends to a first surface of the dielectric structure, and the first surface of the dielectric structure is coplanar with the first surface of the light emitting structure.

Abstract: A display apparatus includes a substrate, a first-layer power supply line disposed on a substrate in a peripheral area which surrounds a display area in which an image is displayed, a first insulation layer on the substrate on which the first-layer power supply line is disposed, a second-layer power supply line disposed on the first insulation layer and the first-layer power supply line, and contacting the first-layer power supply line, a second insulation layer on the first insulation layer on which the second-layer power supply line is disposed, and a light emitting structure disposed on the second insulation layer and including a first electrode, a light emitting layer and a second electrode which is electrically connected to the second-layer power supply line.

Abstract: A semiconductor device includes a semiconductor layer having a front surface on which a transistor is provided and a back surface opposite to the front surface, and a conductive member that penetrates through the semiconductor layer. In the semiconductor device, between a second plane including the back surface and a third plane, a solid material that is an insulator is provided between the conductive member and the semiconductor layer, and, between a first plane including the front surface and the third plane, a hollow part is provided between the conductive member and the semiconductor layer, and a center of the hollow part in a direction crossing the first plane and the second plane is positioned between the first plane and the third plane.

Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

Abstract: A light-emitting device includes: a circuit board; and a light-emitting element mounted on the circuit board, the light-emitting element including: a substrate provided on the circuit board, the substrate having a first side along a first direction and a second side along the first direction, wherein a second direction from the first side toward the second side being is orthogonal to the first direction; n semiconductor stacked bodies (n being a natural number of 2 or more) provided on the substrate, the n semiconductor stacked bodies comprising a first semiconductor stacked body and a second semiconductor stacked body that are electrically insulated from each other; and n+1 interconnect layers.

Abstract: Optoelectronic components may include a semiconductor layer sequence on an auxiliary carrier where the sequence includes at least one n-doped layer, at least one p-doped layer, and an active layer therebetween. A first insulation layer is arranged over a surface of the n-doped layer. A first and second metallization are arranged for contacting the p-doped and n-doped layers, and the metallizations are connected to each other. The first and second metallizations are spatially separated from one another. A second insulation layer electrically insulates the first and second metallizations.

Abstract: A flexible display panel, a method for fabricating the same, and a display device are provided. A protruding structure located is formed in a via-hole area on a flexible base substrate so that both the protruding structure, and the portions of an organic light-emitting functional film and a top electrode layer covering the protruding structure can be removed. Thereafter an encapsulation thin film covering the patterns of the organic light-emitting functional film and the top electrode layer is formed. After the encapsulation thin film is formed, the step of removing the pattern of the encapsulation thin film in the via-hole area can be further performed to expose the flexible base substrate in the via-hole area, and after the flexible base substrate in the via-hole area is removed, a via-hole can be formed in the flexible base substrate.

Abstract: The embodiments of the present disclosure provide a display panel, a method for manufacturing a display panel, and a display apparatus. The display panel includes a hole located in a display area of the display panel and penetrating the display panel, and an isolation structure located around the hole and partially penetrating the display panel, wherein a heat resistance of a material of the isolation structure is greater than that of a material adjacent to the isolation structure.

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

Abstract: A semiconductor device includes a semiconductor layer having a front surface on which a transistor is provided and a back surface opposite to the front surface, and a conductive member that penetrates through the semiconductor layer. In the semiconductor device, between a second plane including the back surface and a third plane, a solid material that is an insulator is provided between the conductive member and the semiconductor layer, and, between a first plane including the front surface and the third plane, a hollow part is provided between the conductive member and the semiconductor layer, and a center of the hollow part in a direction crossing the first plane and the second plane is positioned between the first plane and the third plane.

Abstract: A transparent light-emitting display film includes a transparent substrate in a form of film, a transparent electrode on a first side of the transparent substrate, a through hole formed to penetrate the transparent substrate in a direction perpendicular to a plane of the transparent substrate, a light-emitting device mounted in the through hole, and a connection member configured to electrically connect the transparent electrode and the light-emitting device.

Abstract: Provided is an electronic apparatus. The electronic apparatus includes a base substrate which includes a front surface and a rear surface facing each other, and in which a module hole passing through the front and rear surfaces is defined, a thin film transistor disposed on the base substrate, a light emitting device including a first electrode connected to the thin film transistor, a second electrode disposed on the first electrode, and a light emitting pattern disposed between the first electrode and the second electrode, an encapsulation layer which covers the light emitting device, an input sensing unit disposed on the base substrate and including a plurality of first conductive patterns and second conductive patterns disposed on the first conductive patterns, and an insulation layer disposed between the first conductive patterns and the second conductive patterns. The encapsulation layer is disposed between the first conductive patterns and the second conductive patterns.

Abstract: A pixel structure including a first light-emitting diode element, a second light-emitting diode element and a first interconnection pattern is provided. The first interconnection pattern is disposed on and electrically connected to a first electrode of the first light-emitting diode element and a first electrode of the second light-emitting diode element. The first interconnection pattern is configured to be electrically connected to a drive element. The first interconnection pattern includes a first main portion and a second main portion. The first main portion extending in a first direction is disposed on the first electrode of the first light-emitting diode element. The second main portion extending in a second direction and connected to the first main portion is disposed on the first electrode of the second light-emitting diode element. The first direction and the second direction are crossed.

Abstract: An electronic device includes a substrate, a plurality of metal pads, and a plurality of light emitting diodes. The metal pads are disposed on the substrate and form an array. Each of the light emitting diodes is electrically connected to at least two of the metal pads. The metal pads include a plurality of dummy metal pads electrically isolated to the light emitting diodes.

Abstract: A semiconductor chip, a method for producing a semiconductor chip and an apparatus having a plurality of semiconductor chips are disclosed. In an embodiment a chip includes a substrate and a semiconductor layer arranged at the substrate, wherein the substrate includes, at a side facing the semiconductor layer, a top side with a width B1 in a first lateral direction and, at a side opposite to the top side, a bottom side with a width B3 in the first lateral direction, wherein the substrate has a width B2 in the first lateral direction at a half height between the top side and the bottom side, and wherein the following applies to widths B1, B2 and B3: B1?B2<B2?B3, and B1?B2>B3.

Abstract: An optoelectronic arrangement is specified, comprising a moulded body (2) having a base surface (2b), a first pixel group (41) with a multiplicity of pixels (1) assigned thereto, each having a first semiconductor region (11), a second semiconductor region (12) and an active region (10), a multiplicity of separating structures (3) arranged between the pixels (1), and at least one first contact structure (51, 52, 53) having a first contact plane (51) and a first contact location (52), which is freely accessible at the base surface (2b), wherein the pixels (1) of the first pixel group (41) are arranged alongside one another at the top surface (2a), the first semiconductor regions (11) and/or the second semiconductor regions (12) of adjacent pixels (1) of the first pixel group (41) are electrically insulated from one another by means of the separating structures (3), a first contact structure (51, 52, 53) is assigned one-to-one to the first pixel group (41), and the first semiconductor regions (11) of the pixels

Abstract: Disclosed is an organic light emitting display apparatus and a method of manufacturing the same, which prevent an organic light emitting layer from being peeled from an anode electrode.

Abstract: An optoelectronic component having a leadframe and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a radiation-emitting semiconductor chip having a mounting surface and side surfaces, a leadframe comprising a first element having a first main extension plane, a second element having a second main extension plane, and a third element having a third main extension plane, wherein the main extension planes are arranged parallel to one another, and wherein the elements are arranged one above the other in a stacking direction; and a reflective casting compound forming a planar surface facing the mounting surface of the semiconductor chip, wherein the semiconductor chip is mounted with the mounting surface on a support surface of the third element, which is smaller than the mounting surface of the semiconductor chip, such that the semiconductor chip projects laterally beyond the support surface of the third element.

Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

Abstract: A light emitting diode display including at least one light emitting diode chip is provided. The light emitting diode chip includes a first substrate, a plurality of light emitting diodes, a first insulation layer and a plurality of switch devices. The plurality of light emitting diodes are disposed on the first substrate. The first insulation layer covers the plurality of light emitting diodes. The plurality of switch devices are disposed on the first insulation layer and electrically connected to the plurality of light emitting diodes. Moreover, a fabricating method of the light emitting diode display is also provided.

Abstract: A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.

Abstract: A three-dimensional display module includes a substrate, a display layer, a first electrode layer, a liquid-crystal layer, a second electrode layer, and a drive unit. The substrate has first electrodes and second electrodes. The display layer is disposed on the substrate and includes light-emitting elements. The first electrode layer is disposed on the display layer. The liquid-crystal layer is disposed on the display layer. The second electrode layer is disposed on the liquid-crystal layer. The drive unit drives the first electrodes and the first electrode layer to supply power to the light-emitting elements, such that the light-emitting elements generate light passing through the liquid-crystal layer to form a display image. The drive unit drives the second electrodes and the second electrode layer to produce an electric field on the liquid-crystal layer to change focal length of the liquid-crystal layer so as to control depth of field of the display image.

Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

Abstract: A display apparatus includes: a substrate including a display area and a non-display area surrounding the display area; a data wiring on the substrate in the display area; a connection wiring on the substrate in the non-display area and including a same material as the data line; an inorganic protective layer on the substrate covering the data line and extending to the non-display area; and an upper organic layer on the substrate covering the connection wiring and at least a portion of the inorganic protection layer, where the upper organic layer includes a first to third upper organic layers, and the second upper organic layer in a side of the upper organic layer adjacent to the display area is in direct contact with the inorganic protective layer, and the third upper organic layer exposes an end of the second upper organic layer in the side of the upper organic layer.

Abstract: A semiconductor component including a Wheatstone bridge rectifying circuit and a transistor is provided, wherein the Wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the Wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the first rectifying diode; a third rectifying diode electrically connected to the second rectifying diode; and a fourth rectifying diode electrically connected to the third rectifying diode.

Abstract: A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width ?0.4 ?m, such as ?0.3 ?m), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.

Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

Abstract: Embodiments of the disclosure provide a backlight module using MJT LEDs and a backlight unit including the same. More specifically, embodiments of the disclosure provide a backlight module, which includes MJT LEDs configured to increase an effective light emitting area of each of light emitting cells and optical members capable of uniformly dispersing light emitted from the MJT LEDs. In addition, embodiments of the disclosure provide a backlight unit using the backlight module, thereby reducing the number of LEDs constituting the backlight unit while allowing operation at low current.

Abstract: A device and a method for producing a device are disclosed. In an embodiment the device includes a carrier and a semiconductor body arranged in a vertical direction on the carrier. The carrier includes at least one metal layer for electrically contacting the semiconductor body, a non-metallic molding layer, at least one electrically insulating insulation layer, wherein the insulation layer is arranged in the vertical direction between the semiconductor body and the molding layer and internal anchoring structures, wherein at least two layers of the metal layer, the molding layer and the insulation layer are anchored to one another by the internal anchoring structures.

Abstract: A light-emitting device includes a substrate, first and second electrode pads, first to M-th light-emitting cells arranged in a line in a first direction between the first and second electrode pads, and first to N-th connection wires for electrically connecting the first to M-th light-emitting cells, wherein each of the first to M-th light-emitting cells comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the first electrode pad is connected to the second conductive semiconductor layer of the first light-emitting cell while the second electrode pad is connected to the first conductive semiconductor layer of the M-th light-emitting cell, and an n-th connection wire electrically connects the first conductive semiconductor layer of an n-th light-emitting cell to the second conductive semiconductor layer of an (n+1)-th light-emitting cell, which are adjacent to each other.

Abstract: A Micro-LED display panel and a display device, the Micro-LED display panel includes a plurality of light-emitting elements distributed in matrix; each light-emitting element includes a first electrode, a semi-conductor layer, and a second electrode arranged by stacking, the semi-conductor layer is placed between the first and second electrode; the semi-conductor layer includes a first semi-conductor layer, an active layer and a second semi-conductor layer successively stacked up; each light-emitting element further includes a metal layer arranged at a side of the semi-conductor layer, surrounding the semi-conductor layer and insulated from the first and second electrode, respectively; the light-emitting elements are divided into a plurality of light-emitting element groups, each of which includes multiple of the plurality of light-emitting elements; and the metal layers of the multiple of the plurality of light-emitting elements in each light-emitting element group are connected with each other to form one t

Abstract: There are provided a semiconductor array and a method for producing a micro device, in which the semiconductor laminate used in the micro device can be readily separated from the substrate. The semiconductor array includes a substrate, a bridging portion bridged to the substrate, a plurality of semiconductor laminates arranged on the bridging portion, and first voids defined by the substrate and the bridging portion. The bridging portion has a plurality of through holes formed at least one of the leg portion and the top portion. The first void communicates with the outside of the semiconductor array via the through holes. Each of the semiconductor laminates is in direct contact with each of the top portions.

Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

Abstract: The present disclosure provides an array substrate, a display device, a method for maintenance and a method for manufacturing the array substrate. The array substrate includes a base substrate and a plurality of signal lines arranged on the base substrate.

Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

Abstract: A light-emitting device is able to output white in accordance with the white rendering effect required in various application sites. The light-emitting device includes a (circuit) substrate, at least one light-emitting unit disposed on the substrate, an electrically conductive section disposed on the substrate, a protection layer disposed on the substrate, and an electric conductor disposed on the protection layer and electrically connected with the light-emitting unit and the electrically conductive section. The protection layer is formed with a receiving section. The light-emitting unit is positioned in the receiving section and securely enclosed by an adhesive body. The light-emitting device can achieve a pure white general output optical spectrum to overcome the problems of the conventional technique that the structure is complicated, the manufacturing time is longer and the manufacturing cost is higher.

Abstract: A display apparatus includes: a display substrate; a light-emitting diode (“LED”) disposed on the display substrate and which emits light; a passivation layer disposed on the display substrate and surrounding the LED; a first conductive layer disposed on the LED and the passivation layer; and a capping layer disposed on the LED and which adjusts a proceeding path of light emitted from the LED, where the first conductive layer includes a first region which overlaps the capping layer and a second region which does not overlap the capping layer, and the first region and the second region of the first conductive layer have different light characteristics from each other.

Abstract: A display unit including a first substrate and a second substrate that are disposed to face each other, a first organic insulating layer on the first substrate, a plurality of light-emitting elements arrayed in a display region, the display region on the first organic insulating layer and facing the second substrate and a first moisture-proof film covering the first organic insulating layer in a peripheral region, in which the peripheral region is provided on the first substrate and surrounds the display region.

Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.

Abstract: A chip package is provided, the chip package including: a chip carrier; a chip disposed over and electrically connected to a chip carrier top side; an electrically insulating material disposed over and at least partially surrounding the chip; one or more electrically conductive contact regions formed over the electrically insulating material and in electrical connection with the chip; a further electrically insulating material disposed over a chip carrier bottom side; wherein an electrically conductive contact region on the chip carrier bottom side is released from the further electrically insulating material.

Abstract: A light emitting device includes a substrate, a plurality of light emitting cells disposed on the substrate to be spaced apart from each other, and a connection wire electrically connecting adjacent ones of the light emitting cells. A first separation distance between first adjacent light emitting cells that are not connected by the connection wire among the light emitting cells is smaller than a second separation distance between second adjacent light emitting cells connected by the connection wire among the light emitting cells.

Abstract: A light-emitting diode is provided. The light-emitting diode comprises: a first light-emitting structure, comprising: a first area; a second area; a first isolation path having an electrode isolation layer between the first area and the second area; an electrode contact layer covering the first area; and an electrical connecting structure covering the second area; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and the electrode contact layer covers a sidewall of the first area.

Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

Abstract: Provided herein are methods of depositing p-type metal oxide thin films by atomic layer deposition (ALD). Also provided are p-type metal oxide thin films and TFTs including p-type metal oxide channels. In some implementations, the p-type metal oxide thin films have a metal and oxygen vacancy defect density of less than 1019/cm3. The p-type metal oxide thin films may be electrically active throughout the entire thicknesses of the thin films.

Abstract: A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.

Abstract: A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.

Abstract: A light emitting device includes a substrate, a plurality of light emitting cells separated from each other and disposed on the substrate, and a plurality of conductive interconnection layers electrically connecting two neighboring light emitting cells. Each light emitting cell includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a first electrode, a second electrode, and an etching area. The light emitting structure further includes a first side surface and a second side surface, and if a width between the first side surface and the second side surface is defined as W, the second electrode is disposed in an area between a position separated from the first side surface by 1 5 ? W and a position separated from the first side surface of the light emitting structure by 1 2 ? W .

Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

Abstract: A semiconductor chip (10) is provided which comprises: a semiconductor layer sequence (20) with a p-type semiconductor region (5) and an n-type semiconductor region (3), a plurality of p-contacts (11a, 11b), which are connected electrically conductively with the p-type semiconductor region (5), and a plurality of n-contacts (12a, 12b), which are connected electrically conductively with the n-type semiconductor region (3), wherein: the p-contacts (11a, 11b) and the n-contacts (12a, 12b) are arranged on a rear side of the semiconductor chip (10), the semiconductor chip (10) comprises a plurality of regions (21, 22) arranged adjacent one another, and the regions (21, 22) each comprise one of the p-contacts (11a, 11b) and one of the n-contacts (12a, 12b).