With Electrical Isolation Means In Integrated Circuit Structure Patents (Class 257/93)
  • Patent number: 10749087
    Abstract: An optoelectronic component having a leadframe and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a radiation-emitting semiconductor chip having a mounting surface and side surfaces, a leadframe comprising a first element having a first main extension plane, a second element having a second main extension plane, and a third element having a third main extension plane, wherein the main extension planes are arranged parallel to one another, and wherein the elements are arranged one above the other in a stacking direction; and a reflective casting compound forming a planar surface facing the mounting surface of the semiconductor chip, wherein the semiconductor chip is mounted with the mounting surface on a support surface of the third element, which is smaller than the mounting surface of the semiconductor chip, such that the semiconductor chip projects laterally beyond the support surface of the third element.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: August 18, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Tamas Lamfalusi, Markus Richter
  • Patent number: 10700240
    Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: June 30, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
  • Patent number: 10636835
    Abstract: A light emitting diode display including at least one light emitting diode chip is provided. The light emitting diode chip includes a first substrate, a plurality of light emitting diodes, a first insulation layer and a plurality of switch devices. The plurality of light emitting diodes are disposed on the first substrate. The first insulation layer covers the plurality of light emitting diodes. The plurality of switch devices are disposed on the first insulation layer and electrically connected to the plurality of light emitting diodes. Moreover, a fabricating method of the light emitting diode display is also provided.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: April 28, 2020
    Assignee: Acer Incorporated
    Inventors: Jui-Chieh Hsiang, Hsu-Hsiang Tseng, Chih-Chiang Chen
  • Patent number: 10573784
    Abstract: A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: February 25, 2020
    Assignee: LEXITAR ELECTRONICS CORPORATION
    Inventors: Shiou-Yi Kuo, Jun-Rong Chen, Guo-Yi Shiu
  • Patent number: 10522062
    Abstract: A three-dimensional display module includes a substrate, a display layer, a first electrode layer, a liquid-crystal layer, a second electrode layer, and a drive unit. The substrate has first electrodes and second electrodes. The display layer is disposed on the substrate and includes light-emitting elements. The first electrode layer is disposed on the display layer. The liquid-crystal layer is disposed on the display layer. The second electrode layer is disposed on the liquid-crystal layer. The drive unit drives the first electrodes and the first electrode layer to supply power to the light-emitting elements, such that the light-emitting elements generate light passing through the liquid-crystal layer to form a display image. The drive unit drives the second electrodes and the second electrode layer to produce an electric field on the liquid-crystal layer to change focal length of the liquid-crystal layer so as to control depth of field of the display image.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: December 31, 2019
    Assignee: Industrial Technology Research Institute
    Inventors: Ying-Chien Chu, Yen-Hsiang Fang, Chia-Hsin Chao, Ming-Hsien Wu, Shih-Hao Wang
  • Patent number: 10490703
    Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: November 26, 2019
    Assignee: LUMENS CO., LTD.
    Inventors: Tae Kyung Yoo, Myeong Kook Gong, Yong Wook Cho, Min Pyo Kim, Sung Hwan Yoo, Kyoung Min Kim
  • Patent number: 10325972
    Abstract: A display apparatus includes: a substrate including a display area and a non-display area surrounding the display area; a data wiring on the substrate in the display area; a connection wiring on the substrate in the non-display area and including a same material as the data line; an inorganic protective layer on the substrate covering the data line and extending to the non-display area; and an upper organic layer on the substrate covering the connection wiring and at least a portion of the inorganic protection layer, where the upper organic layer includes a first to third upper organic layers, and the second upper organic layer in a side of the upper organic layer adjacent to the display area is in direct contact with the inorganic protective layer, and the third upper organic layer exposes an end of the second upper organic layer in the side of the upper organic layer.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: June 18, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hyungjun Park, Wonkyu Kwak, Yangwan Kim, Jaeyong Lee, Jintae Jeong
  • Patent number: 10306714
    Abstract: A semiconductor component including a Wheatstone bridge rectifying circuit and a transistor is provided, wherein the Wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the Wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the first rectifying diode; a third rectifying diode electrically connected to the second rectifying diode; and a fourth rectifying diode electrically connected to the third rectifying diode.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: May 28, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Shu Huang, Chun-Ju Tun, Shyi-Ming Pan, Wei-Kang Cheng, Keng-Ying Liao
  • Patent number: 10297733
    Abstract: A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width ?0.4 ?m, such as ?0.3 ?m), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: May 21, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Hou-jun Wu, Jiansen Zheng, Chen-ke Hsu, Anhe He, Chia-en Lee
  • Patent number: 10283678
    Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: May 7, 2019
    Assignee: LUMENS CO., LTD.
    Inventors: Tae Kyung Yoo, Myeong Kook Gong, Yong Wook Cho, Min Pyo Kim, Sung Hwan Yoo, Kyoung Min Kim
  • Patent number: 10278243
    Abstract: Embodiments of the disclosure provide a backlight module using MJT LEDs and a backlight unit including the same. More specifically, embodiments of the disclosure provide a backlight module, which includes MJT LEDs configured to increase an effective light emitting area of each of light emitting cells and optical members capable of uniformly dispersing light emitted from the MJT LEDs. In addition, embodiments of the disclosure provide a backlight unit using the backlight module, thereby reducing the number of LEDs constituting the backlight unit while allowing operation at low current.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: April 30, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Young Jun Song, Hyuck Jung Choi, Il Kyung Suh
  • Patent number: 10236416
    Abstract: A device and a method for producing a device are disclosed. In an embodiment the device includes a carrier and a semiconductor body arranged in a vertical direction on the carrier. The carrier includes at least one metal layer for electrically contacting the semiconductor body, a non-metallic molding layer, at least one electrically insulating insulation layer, wherein the insulation layer is arranged in the vertical direction between the semiconductor body and the molding layer and internal anchoring structures, wherein at least two layers of the metal layer, the molding layer and the insulation layer are anchored to one another by the internal anchoring structures.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: March 19, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Norwin von Malm
  • Patent number: 10217902
    Abstract: A light-emitting device includes a substrate, first and second electrode pads, first to M-th light-emitting cells arranged in a line in a first direction between the first and second electrode pads, and first to N-th connection wires for electrically connecting the first to M-th light-emitting cells, wherein each of the first to M-th light-emitting cells comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the first electrode pad is connected to the second conductive semiconductor layer of the first light-emitting cell while the second electrode pad is connected to the first conductive semiconductor layer of the M-th light-emitting cell, and an n-th connection wire electrically connects the first conductive semiconductor layer of an n-th light-emitting cell to the second conductive semiconductor layer of an (n+1)-th light-emitting cell, which are adjacent to each other.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: February 26, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Sung Kyoon Kim, Min Gyu Na
  • Patent number: 10209802
    Abstract: A Micro-LED display panel and a display device, the Micro-LED display panel includes a plurality of light-emitting elements distributed in matrix; each light-emitting element includes a first electrode, a semi-conductor layer, and a second electrode arranged by stacking, the semi-conductor layer is placed between the first and second electrode; the semi-conductor layer includes a first semi-conductor layer, an active layer and a second semi-conductor layer successively stacked up; each light-emitting element further includes a metal layer arranged at a side of the semi-conductor layer, surrounding the semi-conductor layer and insulated from the first and second electrode, respectively; the light-emitting elements are divided into a plurality of light-emitting element groups, each of which includes multiple of the plurality of light-emitting elements; and the metal layers of the multiple of the plurality of light-emitting elements in each light-emitting element group are connected with each other to form one t
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: February 19, 2019
    Assignee: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD.
    Inventors: Hong Li, Conghua Ma
  • Patent number: 10192809
    Abstract: There are provided a semiconductor array and a method for producing a micro device, in which the semiconductor laminate used in the micro device can be readily separated from the substrate. The semiconductor array includes a substrate, a bridging portion bridged to the substrate, a plurality of semiconductor laminates arranged on the bridging portion, and first voids defined by the substrate and the bridging portion. The bridging portion has a plurality of through holes formed at least one of the leg portion and the top portion. The first void communicates with the outside of the semiconductor array via the through holes. Each of the semiconductor laminates is in direct contact with each of the top portions.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: January 29, 2019
    Assignee: TOYODA GOSEI CO., LTD.
    Inventor: Koji Okuno
  • Patent number: 10181548
    Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: January 15, 2019
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Keum Ju Lee, Seom Geun Lee, Kyoung Wan Kim, Yong Woo Ryu, Mi Na Jang
  • Patent number: 9997675
    Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: June 12, 2018
    Assignee: LUMENS CO., LTD.
    Inventors: Tae Kyoung Yoo, Myeong Kook Gong, Yong Wook Cho, Min Pyo Kim, Sung Hwan Yoo, Kyoung Min Kim
  • Patent number: 9995979
    Abstract: The present disclosure provides an array substrate, a display device, a method for maintenance and a method for manufacturing the array substrate. The array substrate includes a base substrate and a plurality of signal lines arranged on the base substrate.
    Type: Grant
    Filed: December 23, 2015
    Date of Patent: June 12, 2018
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINGSHENG OPTOELECTRONICS TECHNOLOGY CO..
    Inventors: Yaoyao Feng, Guoquan Liu, Chong Fang
  • Patent number: 9991240
    Abstract: A display apparatus includes: a display substrate; a light-emitting diode (“LED”) disposed on the display substrate and which emits light; a passivation layer disposed on the display substrate and surrounding the LED; a first conductive layer disposed on the LED and the passivation layer; and a capping layer disposed on the LED and which adjusts a proceeding path of light emitted from the LED, where the first conductive layer includes a first region which overlaps the capping layer and a second region which does not overlap the capping layer, and the first region and the second region of the first conductive layer have different light characteristics from each other.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: June 5, 2018
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventor: Changyong Jeong
  • Patent number: 9989222
    Abstract: A light-emitting device is able to output white in accordance with the white rendering effect required in various application sites. The light-emitting device includes a (circuit) substrate, at least one light-emitting unit disposed on the substrate, an electrically conductive section disposed on the substrate, a protection layer disposed on the substrate, and an electric conductor disposed on the protection layer and electrically connected with the light-emitting unit and the electrically conductive section. The protection layer is formed with a receiving section. The light-emitting unit is positioned in the receiving section and securely enclosed by an adhesive body. The light-emitting device can achieve a pure white general output optical spectrum to overcome the problems of the conventional technique that the structure is complicated, the manufacturing time is longer and the manufacturing cost is higher.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: June 5, 2018
    Assignee: Edison Opto Corporation
    Inventors: Kuo-Feng Tseng, Shih-Tai Chuang, Chi-Yang Tsou
  • Patent number: 9865839
    Abstract: A display unit including a first substrate and a second substrate that are disposed to face each other, a first organic insulating layer on the first substrate, a plurality of light-emitting elements arrayed in a display region, the display region on the first organic insulating layer and facing the second substrate and a first moisture-proof film covering the first organic insulating layer in a peripheral region, in which the peripheral region is provided on the first substrate and surrounds the display region.
    Type: Grant
    Filed: July 30, 2013
    Date of Patent: January 9, 2018
    Assignee: JOLED INC.
    Inventors: Takatoshi Saito, Kenichi Izumi, Shinichi Teraguchi, Tadakatsu Nakadaira, Mikihiro Yokozeki, Shota Nishi, Manabu Kodate
  • Patent number: 9859466
    Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: January 2, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang
  • Patent number: 9859198
    Abstract: A chip package is provided, the chip package including: a chip carrier; a chip disposed over and electrically connected to a chip carrier top side; an electrically insulating material disposed over and at least partially surrounding the chip; one or more electrically conductive contact regions formed over the electrically insulating material and in electrical connection with the chip; a further electrically insulating material disposed over a chip carrier bottom side; wherein an electrically conductive contact region on the chip carrier bottom side is released from the further electrically insulating material.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: January 2, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Michael Bauer, Alfred Haimerl, Angela Kessler, Wolfgang Schober
  • Patent number: 9837577
    Abstract: A light emitting device includes a substrate, a plurality of light emitting cells disposed on the substrate to be spaced apart from each other, and a connection wire electrically connecting adjacent ones of the light emitting cells. A first separation distance between first adjacent light emitting cells that are not connected by the connection wire among the light emitting cells is smaller than a second separation distance between second adjacent light emitting cells connected by the connection wire among the light emitting cells.
    Type: Grant
    Filed: December 26, 2013
    Date of Patent: December 5, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Sung Kyoon Kim, Young Bong Yoo, Sung Ho Choo
  • Patent number: 9825087
    Abstract: A light-emitting diode is provided. The light-emitting diode comprises: a first light-emitting structure, comprising: a first area; a second area; a first isolation path having an electrode isolation layer between the first area and the second area; an electrode contact layer covering the first area; and an electrical connecting structure covering the second area; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and the electrode contact layer covers a sidewall of the first area.
    Type: Grant
    Filed: January 26, 2016
    Date of Patent: November 21, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Tsung-Hsien Yang, Han-Min Wu, Jhih-Sian Wang, Yi-Ming Chen, Tzu-Ghieh Hsu
  • Patent number: 9780262
    Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.
    Type: Grant
    Filed: December 24, 2016
    Date of Patent: October 3, 2017
    Assignee: LUMENS CO., LTD.
    Inventors: Tae Kyoung Yoo, Myeong Kook Gong, Yong Wook Cho, Min Pyo Kim, Sung Hwan Yoo, Kyoung Min Kim
  • Patent number: 9685542
    Abstract: Provided herein are methods of depositing p-type metal oxide thin films by atomic layer deposition (ALD). Also provided are p-type metal oxide thin films and TFTs including p-type metal oxide channels. In some implementations, the p-type metal oxide thin films have a metal and oxygen vacancy defect density of less than 1019/cm3. The p-type metal oxide thin films may be electrically active throughout the entire thicknesses of the thin films.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: June 20, 2017
    Assignee: QUALCOMM Incorporated
    Inventors: Kenji Nomura, John Hyunchul Hong
  • Patent number: 9661698
    Abstract: A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: May 23, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Shu Huang, Chun-Ju Tun, Shyi-Ming Pan, Wei-Kang Cheng, Keng-Ying Liao
  • Patent number: 9601674
    Abstract: A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: March 21, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: 9601666
    Abstract: A light emitting device includes a substrate, a plurality of light emitting cells separated from each other and disposed on the substrate, and a plurality of conductive interconnection layers electrically connecting two neighboring light emitting cells. Each light emitting cell includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a first electrode, a second electrode, and an etching area. The light emitting structure further includes a first side surface and a second side surface, and if a width between the first side surface and the second side surface is defined as W, the second electrode is disposed in an area between a position separated from the first side surface by 1 5 ? W and a position separated from the first side surface of the light emitting structure by 1 2 ? W .
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: March 21, 2017
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sung Kyoon Kim, Hee Young Beom, Hyun Seoung Ju, Byung Yeon Choi
  • Patent number: 9583686
    Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: February 28, 2017
    Assignee: LUMENS CO., LTD.
    Inventors: Tae Kyoung Yoo, Myeong Kook Gong, Yong Wook Cho, Min Pyo Kim, Sung Hwan Yoo, Kyoung Min Kim
  • Patent number: 9583685
    Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: February 28, 2017
    Assignee: LUMENS CO., LTD.
    Inventors: Tae Kyoung Yoo, Myeong Kook Gong, Yong Wook Cho, Min Pyo Kim, Sung Hwan Yoo, Kyoung Min Kim
  • Patent number: 9379161
    Abstract: A semiconductor chip (10) is provided which comprises: a semiconductor layer sequence (20) with a p-type semiconductor region (5) and an n-type semiconductor region (3), a plurality of p-contacts (11a, 11b), which are connected electrically conductively with the p-type semiconductor region (5), and a plurality of n-contacts (12a, 12b), which are connected electrically conductively with the n-type semiconductor region (3), wherein: the p-contacts (11a, 11b) and the n-contacts (12a, 12b) are arranged on a rear side of the semiconductor chip (10), the semiconductor chip (10) comprises a plurality of regions (21, 22) arranged adjacent one another, and the regions (21, 22) each comprise one of the p-contacts (11a, 11b) and one of the n-contacts (12a, 12b).
    Type: Grant
    Filed: February 5, 2014
    Date of Patent: June 28, 2016
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Thomas Schlereth, Markus Kirsch, Christian Gaertner, Tony Albrecht
  • Patent number: 9349780
    Abstract: A transparent organic light emitting display device and a method of manufacturing the transparent organic light emitting display device are provided. The transparent organic light emitting display device comprises a plurality of sub pixel regions, each having a emissive area and a transmissive area, a thin film transistor disposed in the emissive area, and an organic light emitting element electrically connected to the thin film transistor. While the emissive area emits light to display image on the display device, the transmissive area allows the external light to be passed through the display device so that objects behind the display device can be viewed simultaneously with the displayed image.
    Type: Grant
    Filed: December 3, 2013
    Date of Patent: May 24, 2016
    Assignee: LG Display Co., Ltd.
    Inventors: YongChul Kim, Jonghyeok Im
  • Patent number: 9349972
    Abstract: An organic photodetector comprising a first electrode (11 to 31) that is plane and formed on a substrate (10 to 30) that is plane, a convex active layer (12 to 32) formed on the first electrode, and a second electrode (13 to 33) formed on the active layer, means for concentrating light radiation in the active layer being incorporated in the photodetector.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: May 24, 2016
    Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, ISORG
    Inventors: Mohammed Benwadih, Anis Daami, Jamal Tallal
  • Patent number: 9343642
    Abstract: An optoelectronic semiconductor chip includes a carrier including a carrier element having a mounting side; one electrically conductive n-type wiring layer arranged at the mounting side; a structured, electrically conductive contact layer having a p-side and n-side contact region and arranged at a side of the n-type wiring layer facing away from the carrier element; at least one insulation region electrically insulating the p-side contact region from the n-side contact region; at least one electrically insulating spacer layer arranged at a side of the n-type wiring layer facing away from the carrier element in a vertical direction between the p-side contact region and the n-type wiring layer, wherein the n-side contact region and the n-type wiring layer electrically conductively connect to one another, and the p-side contact region and the spacer layer border the n-side contact region in a lateral direction; an optoelectronic structure connected to the carrier.
    Type: Grant
    Filed: March 28, 2012
    Date of Patent: May 17, 2016
    Assignee: OSRAM Opto Semiconductor GmbH
    Inventor: Norwin von Malm
  • Patent number: 9299901
    Abstract: According to one embodiment, a semiconductor light emitting device includes a metal layer, a stacked structural body, a first electrode, a pad electrode, a first conductive layer, a second conductive layer and an insulating layer. The metal layer includes a major surface having a first region, a second region, a third region and a fourth region. The stacked structural body includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer includes a first portion and a second portion. The second semiconductor layer is provided between the first region and the first portion. The first electrode is provided between the second region and the second portion. The pad electrode is provided on the third region. The first conductive layer is provided between the second region and the first electrode and between the third region and the pad electrode.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: March 29, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Katsuno, Satoshi Mitsugi, Toshihide Ito, Shinya Nunoue
  • Patent number: 9268169
    Abstract: Embodiments of the invention provide a display panel with a pixel define layer, a manufacturing method of a pixel define layer of a display panel, and a display device. The display panel with the pixel define layer comprises: a substrate and the pixel define layer disposed on the substrate. The pixel define layer includes a photosensitive resin layer and a transparent define layer sequentially disposed on the substrate. The photosensitive resin layer has an opening in a region corresponding to each pixel region of the display panel, the transparent define layer has an opening in the region corresponding to each pixel region of the display panel, and the opening of the transparent define layer is smaller than the opening of the photosensitive resin layer so as to form a fill region with a wide lower portion and a narrow upper portion.
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: February 23, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Chunsheng Jiang
  • Patent number: 9236532
    Abstract: The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: January 12, 2016
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Sum Geun Lee, Jin Cheol Shin, Yeo Jin Yoon
  • Patent number: 9220135
    Abstract: A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: December 22, 2015
    Assignee: Formosa Epitaxy Incorporation
    Inventors: Chih-Shu Huang, Chun-Ju Tun, Shyi-Ming Pan, Wei-Kang Cheng, Keng-Ying Liao
  • Patent number: 9214600
    Abstract: An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: December 15, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Martin Mandl, Martin Straβburg, Christopher Kölper, Alexander Pfeuffer, Patrick Rode, Johannes Ledig, Richard Neumann, Andreas Waag
  • Patent number: 9196806
    Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: November 24, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Chun-Yu Lin, Tzu-Chieh Hsu, Fu-Chun Tsai, Yi-Wen Huang, Chih-Chiang Lu
  • Patent number: 9196798
    Abstract: A semiconductor light-emitting device including an epitaxial structure, a first electrode structure, a second electrode structure, a light reflective metal layer, a resistivity-enhancing structure and a protection ring is provided. The light-emitting epitaxial structure has a first surface and a second surface. The light-emitting epitaxial structure has a first zone and a second zone. The first electrode structure is disposed within the first zone. The second electrode structure is disposed within the second zone. The light reflective metal layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed in contact with a surface of the light reflective metal layer and corresponding to a position of the first electrode structure. The protection ring has a first portion and a second portion. The first portion surrounds a sidewall of the light reflective metal layer. The second portion corresponds to the second electrode structure.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: November 24, 2015
    Assignee: HIGH POWER OPTO. INC.
    Inventors: Wei-Yu Yen, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
  • Patent number: 9196851
    Abstract: An organic photoelectric device includes a first electrode, a metal nanolayer contacting one side of the first electrode, an active layer on one side of the metal nanolayer, and a second electrode on one side of the active layer. An image sensor includes the organic photoelectric device.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: November 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Kyu Sik Kim, Jung Woo Kim, Kwang Hee Lee, Dong-Seok Leem, Seon-Jeong Lim
  • Patent number: 9165955
    Abstract: Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A semiconductor layer, an organic insulating layer, and a gate electrode layer are sequentially formed to cover the substrate, the source electrode, and the drain electrode. A patterned photoresist layer is formed on the gate electrode layer. The exposed portion of the gate electrode layer, and a portion of the organic insulative layer and a portion of the semiconductor layer thereunder are removed to form a gate electrode. An organic passivation layer is formed on the gate electrode, the source electrode, and the drain electrode. The organic passivation layer has a contact window to expose a portion of the drain electrode. A pixel electrode is formed on the organic passivation layer and the exposed portion of the drain electrode.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: October 20, 2015
    Assignee: E Ink Holdings Inc.
    Inventors: Wei-Chou Lan, Ted-Hong Shinn, Henry Wang, Chia-Chun Yeh
  • Patent number: 9136437
    Abstract: According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: September 15, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Akihiro Kojima
  • Patent number: 9059015
    Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: June 16, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Won Cheol Seo, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheul Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
  • Patent number: 9048158
    Abstract: A semiconductor device having a solid-state image sensor which can prevent inter-pixel crosstalk more reliably. The device includes: a semiconductor substrate having a main surface; a first conductivity type impurity layer located over the main surface of the substrate; a photoelectric transducer including a first conductivity type impurity region and a second conductivity type impurity region which are joined to each other over the first conductivity type impurity layer; and transistors which configure a unit pixel including the photoelectric transducer and are electrically coupled to the photoelectric transducer. At least part of the area around the photoelectric transducer in a plan view contains an air gap and also has an isolation insulating layer for electrically insulating the photoelectric transducer and a photoelectric transducer adjacent to it from each other. The isolation insulating layer abuts on the top surface of the first conductivity type impurity layer.
    Type: Grant
    Filed: October 14, 2014
    Date of Patent: June 2, 2015
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Tatsuya Kunikiyo
  • Publication number: 20150144974
    Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) of
    Type: Application
    Filed: March 21, 2013
    Publication date: May 28, 2015
    Inventors: Shunping Chen, Xiaoqiang Zeng, Shaohua Huang, Qunfeng Pan, Jyh-Chiarng Wu
  • Patent number: 9041026
    Abstract: A light-emitting unit with small energy loss is provided. Further, a light-emitting unit with high reliability is provided. A light-emitting unit is provided in the following manner: a separation layer including a leg portion and a stage portion, which protrudes over an electrode is formed so that a projected area of the stage portion is larger than that of the leg portion; a layer containing a light-emitting organic compound, an upper electrode of the first light-emitting element, and an upper electrode of the second light-emitting element are formed; and the upper electrode of the first light-emitting element is electrically connected to a lower electrode of the second light-emitting element in a region overlapping with the stage portion of the separation layer.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: May 26, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki