Abstract: A display substrate includes a base substrate, color filter layers, a bottom supporting layer and a light-blocking and maintaining element. The base substrate includes a gate line, a data line crossing the gate line, and a switching element on the base substrate. The color filter layers are adjacent to each other on the base substrate. The bottom supporting layer is between the color filter layers adjacent to each other and on the base substrate. The light-blocking and maintaining element is between the color filter layers adjacent to each other, and on the bottom supporting layer. The light-blocking and maintaining element includes a light blocking portion, and a maintaining portion which overlaps the bottom supporting layer and protrudes from the light blocking portion.

Abstract: A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction intersecting each other, each of the light-emission elements having a first electrode layer, an organic layer including a luminous layer, and a second electrode layer which are laminated in that order; and a separation section disposed, on the substrate, between the light-emission elements adjacent to each other in the first direction, the separation section having two or more pairs of steps. The first electrode layers in the light-emission elements are separated from each other, and the organic layers as well as the second electrode layers in the light-emission elements adjacent to each other in the first direction are separated from each other by the steps included in the separation section.

Abstract: A light emitting device includes a substrate, light emitting units, an insulation layer, a current distribution layer and a reflective layer. The substrate has an upper surface. The light emitting units are disposed on the upper surface and include at least one first light emitting diode (LED) and at least one second LED. A first side wall of the first LED is adjacent to a second side wall of the second LED so as to define a concave portion exposing a portion of the upper surface. The insulation layer at least covers the first side wall and the second side wall. The current distribution layer covers the concave portion and at least covers a portion of the second LED. The reflective layer covers the current distribution layer and is electrically connected to the first LED and the second LED.

Abstract: Disclosed are a method of fabricating a light emitting device includes the steps of: forming a plurality of compound semiconductor layers on a substrate, the substrate including a plurality of chip regions and isolation region; selectively etching the compound semiconductor layers to form a light emitting structure on each chip region and form a buffer structure on the isolation region; forming a conductive support member on the light emitting structure and the buffer structure; removing the substrate by using a laser lift off process; and dividing the conductive support member into the a plurality of chips of the chip regions, wherein the buffer structure is spaced apart from the light emitting structure.

Abstract: An LED array includes: a first LED unit having a first active layer and a first side; a second LED unit having a second active layer and a second side facing the first side; a trench separating the first LED unit from the second LED unit; and a light-guiding structure formed between the first LED unit and the second LED unite for guiding the light emitted by the first active layer and the second active layer away from the LED array.

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: A transistor includes: a control electrode; an active layer facing the control electrode; a first electrode and a second electrode electrically connected to the active layer; and an insulating layer provided between the control electrode and the active layer, the insulating layer containing diallyl isophthalate resin.

Abstract: A light emitting diode package includes an electrically insulated base, first and second electrodes, an LED chip, a voltage stabilizing module, and an encapsulative layer. The base has a first surface and an opposite second surface. The first and second electrodes are formed on the first surface of the base. The LED chip is electrically connected to the first and second electrodes. The voltage stabilizing module is formed on the first surface of the base, positioned between and electrically connected to the first and second electrodes. The voltage stabilizing module connects to the LED chip in reverse parallel and has a polarity arranged opposite to that of the LED chip. The voltage stabilizing module has an annular shape and encircles the first electrode. The encapsulative layer is formed on the base and covers the LED chip.

Abstract: According to an embodiment, a semiconductor light emitting device includes a light emitting body including a semiconductor light emitting layer, a support substrate supporting the light emitting body, and a bonding layer provided between the light emitting body and the support substrate, the bonding layer bonding the light emitting body and the support substrate together. The device also includes a first barrier metal layer provided between the light emitting body and the bonding layer, and an electrode provided between the light emitting body and the first barrier metal layer. The first barrier layer includes a first layer made of nickel and a second layer made of a metal having a smaller linear expansion coefficient than nickel, and the first layer and the second layer are alternately disposed in a multiple-layer structure. The electrode is electrically connected to the light emitting body.

Abstract: An organic light emitting diode (OLED) light source device is provided, including a lower substrate, a plurality of OLED modules disposed on the lower substrate and arranged in a matrix, a bus circuit surrounding the OLED modules to form a mesh structure and connecting the OLED modules in parallel, and an upper substrate disposed on the OLED modules and the bus circuit. The bus circuit connects the OLED modules in parallel. Therefore, the OLED light source device can be arbitrarily cut into different shapes, and its service life and light emitting performance are not affected by the cutting.

Abstract: A high-voltage alternating current (AC) light-emitting diode (LED) structure is provided. The high-voltage AC LED structure includes a circuit substrate and a plurality of high-voltage LED (HV LED) chips. Each one of the HV LED chips includes a first substrate, an adhering layer, first ohmic contact layers, epi-layers, a first insulating layer, at least two first electrically conducting plates, at least two second electrically conducting plates, and a second substrate. The HV LED chips manufactured by a wafer-level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

Abstract: In one embodiment, the light emitting device package includes a package body, electrodes attached to the package body, and at least two light emitting devices electrically connected to the electrodes. Each light emitting device emits light of a different color from the other light emitting devices. A protective layer is formed over the at least two light emitting devices, and a phosphor layer formed over the protective layer. Other embodiments include other structures such a individual phosphor layers on each light emitting device. And, a light apparatus including a package may include a single driver driving the light emitting devices of the package.

Abstract: A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.

Abstract: Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are formed over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element formed over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.

Abstract: A circuit substrate structure including a substrate, a dielectric stack layer, a first plating layer and a second plating layer is provided. The substrate has a pad. The dielectric stack layer is disposed on the substrate and has an opening exposing the pad, wherein the dielectric stack layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer located between the first dielectric layer and the second dielectric layer, and there is a gap between the portion of the first dielectric layer surrounding the opening and the portion of the second dielectric layer surrounding the opening. The first plating layer is disposed at the dielectric stack layer. The second plating layer is disposed at the pad, wherein the gap isolates the first plating layer from the second plating layer.

Abstract: A light emitting unit including plural kinds of light emitting elements with different light emitting wavelengths, wherein, among the light emitting elements, at least one kind of light emitting element includes a semiconductor layer configured by laminating a first conductive layer, an active layer and a second conductive layer and having a side surface exposed by the first conductive layer, the active layer and the second conductive layer; a first electrode electrically connected to the first conductive layer; a second electrode electrically connected to the second conductive layer; a first insulation layer contacting at least an exposed surface of the active layer in the surface of the semiconductor layer; and a metal layer contacting at least a surface, which is opposite to the exposed surface of the active layer, in the surface of the first insulation layer, and electrically separated from the first electrode and the second electrode.

Abstract: One embodiment of the present invention is an organic electroluminescence element including: a substrate; a first electrode that is formed on the substrate; a luminescent medium layer that includes at least an organic luminescent layer and one or more functional layers other than the organic luminescent layer formed on the first electrode; and a second electrode that faces the first electrode with the luminescent medium layer interposed therebetween, wherein at least one functional layer formed between the first electrode and the organic luminescent layer includes first and second metal compounds and the functional layer is a functional layer in which a gradient is obtained at least partially in a film thickness direction for a ratio of the first metal compound to the second metal compound.

Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

Abstract: A light emitting device free from void-generation at a bonding between an LED chip and a metal layer provided on a dielectric substrate. This light emitting device is also free from short-circuit between the closely arranged LED chips. This light emitting device includes a plurality of the LED chips, one dielectric substrate (sub-mount member) which is made of a dielectric substrate for holding the LED chips. The dielectric substrate is formed with a plurality of supporting platforms which respectively holds the LED chips. Each supporting platform is provided with a metal layer which is soldered to the LED chip. The supporting platforms are configured to leave a groove between the adjacent ones of the supporting platforms. Each supporting platform is provided at its side surface with a solder-leading portion made of a material having a solder-wettablity higher than that of the supporting platform.

Abstract: An LED array having N light-emitting diode units (N?3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.

Abstract: A vertical light-emitting diode with a short circuit protection function includes a heat dissipation substrate, a second electrode, a welding metal layer and a third electrode; a semiconductor light-emitting layer formed on the third electrode; a barrier for the semiconductor light-emitting layer with an isolation trench, so that the barrier for the semiconductor light-emitting layer surrounds the semiconductor light-emitting layer on a central region of the third electrode, with the isolation trench therebetween. The barrier for the semiconductor light-emitting layer has a structure the same as the semiconductor light-emitting layer, and the isolation trench exposes the third electrode. A fourth electrode is formed on the semiconductor light-emitting layer.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same. The LED structure includes an insulation substrate, a plurality of LED chips and a plurality of interconnection layers. Each LED chip includes an epitaxial layer and a dielectric layer stacked on a surface of the insulation substrate in sequence. Each LED chip is formed with a first conductivity type contact hole and a second conductivity type contact hole penetrating the dielectric layer, and a first isolation trench disposed in the epitaxial layer and between the second conductivity type contact hole of the LED chip and the first conductivity type contact hole of the neighboring LED chip. Each interconnection layer extends from the second conductivity type contact hole of each LED chip to the first conductivity type contact hole of the neighboring LED chip by passing over the first isolation trench to electrically connect the LED chips.

Abstract: The application provides a light-emitting diode array, including: a first light-emitting diode including a first area; a second area; a first isolation path between the first area and the second area, and the first isolation path including an electrode isolation layer; and an electrode contact layer covering the first area; a second light-emitting diode including a semiconductor stack layer; and a second electrical bonding pad on the semiconductor stack layer; and a second isolation path between the first light-emitting diode and the second light-emitting diode, wherein the second isolation path includes an electrical connecting structure electrically connected to the first light-emitting diode and the second light-emitting diode.

Abstract: An optoelectronic semiconductor body comprises a semiconductor layer sequence which is subdivided into at least two electrically isolated subsegments. The semiconductor layer sequence has an active layer in each subarea. Furthermore, at least three electrical contact pads are provided. A first line level makes contact with a first of the at least two subsegments and with the first contact pad. A second line level makes contact with the second of the at least two subsegments and with a second contact pad. A third line level connects the two subsegments to one another and makes contact with the third contact pad. Furthermore, the line levels are each arranged opposite a first main face, wherein the first main face is intended to emit electromagnetic radiation that is produced.

Abstract: Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.

Abstract: Disclosed is a semiconductor light emitting element (1) which includes: plural n-side columnar conductor portions (183), each of which is provided by penetrating a p-type semiconductor layer (160) and a light emitting layer (150), and is electrically connected to an n-type semiconductor layer (140); an n-side layer-like conductor portion (184), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the surface of the light emitting layer (150) when viewed from the light emitting layer (150), and is electrically connected to the n-side columnar conductor portions (183); plural p-side columnar conductor portions (173), each of which is electrically connected to the p-type semiconductor layer (160); and a p-side layer-like conductor portion (174), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the light emitting layer (150) when viewed from the light emitting layer (150), and is electrically connected to the p-side columnar conductor

Abstract: This invention relates to an embedding type solder point-free combination structure of LED beads with substrate or lamp body, in which the LED chip is packaged on the embedded heat conductive socket to form embedding type LED beads without soldering for electric conduction, and the embedding type LED beads are fixed in the docking hole of the substrate or the lamp body by a detachable dock-fixing structure. Furthermore, the embedding type LED beads has elastic conductive pieces, while the substrate or lamp body has conductive contacts. The elastic conductive pieces of the embedding type LED beads and the conductive contacts provided on the substrate or lamp body are in close contact to form solder point-free structure when the embedding type LED beads are fixed in the docking hole of the substrate or lamp body by the dock-fixing structure. In this manner, it is convenient to mount or dismount the embedding type LED beads in case of maintenance needed.

Abstract: A light-emitting diode (LED) structure includes an insulation substrate; LED chips each includes an epitaxial layer having a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked on the insulation substrate, and comprises a mesa structure and an exposed portion of the first conductivity type semiconductor layer adjacent to each other, and a first isolation trench within the mesa structure; interconnection layers connect the LED chips; electrode pads respectively connected to exposed portions of the semiconductor layers; a reflective insulating layer covering the interconnection layers, the mesa structures and the electrode pads, and having penetration holes respectively exposing a portion of the electrode pads; and bonding pads located on a portion of the reflective insulating layer and connected to the electrode pads through the penetrating holes. A method of manufacturing the LED structure.

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same. The LED structure comprises an insulating substrate, a plurality of LED chips and a plurality of interconnection layers. Each LED chip comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked in sequence on a surface of the insulating substrate. Each LED chip includes a mesa structure, an exposed portion of the first conductivity type semiconductor layer adjacent to the mesa structure, and a first isolation trench. The first isolation trench is disposed in the mesa structure. The interconnection layers respectively connect neighboring two of the LED chips.

Abstract: A radiation detector made of High Purity Germanium (HPGe) has been specially machined to be this invented multilayer Inter-Coaxial configuration. With this special configuration, extra large volume HPGe detectors of diameters to be 6 inches, 9 inches, and even 12 inches, can be produced with current achievable HPGe crystal purity and quality, in which the entire detector crystal will be depleted and properly over biased for effective photo-induced signal collection with just less than 5000V bias applied. This invention makes extra large efficiency of 200%, 300%, and maybe even higher than 500% possible with HPGe gamma ray detectors with reasonable great resolution performances procurable based on current HPGe crystal supply capability. The invention could also be applied to any other kind of semiconductor materials if any of them could be purified enough for this application in the future.

Abstract: In a light emitting device, a light emitting device unit, and a method for fabricating a light emitting device according to an embodiment of the present invention, a light emitting device (100) includes a substrate (131), a semiconductor light emitting element (121) disposed on the substrate (131), and a resistor (122) coupled to the semiconductor light emitting element (121). The resistor (122) is coupled in parallel to the semiconductor light emitting element (121). The resistor (122) has a resistance set at such a value that when a light emitting operation voltage for causing light emission of the semiconductor light emitting element (121) is applied to the semiconductor light emitting element (121), a current flowing through the resistor (122) is equal to or less than one-fiftieth of a current flowing through the semiconductor light emitting element (121).

Abstract: For integration of light-emitting elements and for suppression of a voltage drop, plural stages of light-emitting element units each including a plurality of light-emitting elements which is connected in parallel are connected in series. Further, besides a lead wiring with a large thickness, a plurality of auxiliary wirings with different widths and different thicknesses is used, and the arrangement of the wirings, electrodes of the light-emitting elements, and the like is optimized.

Abstract: An LED array having N light-emitting diode units (N?3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.

Abstract: A light emitting diode (LED) package includes a substrate, a first LED chip and a second LED chip. The substrate includes first to fourth electrodes, and an interconnection electrode. A mounting area is defined at center of a top surface of the substrate. The first to fourth electrodes are respectively in four corners of the substrate out of the mounting area. The first interconnection electrode is embedded in the substrate to electrically connect the first and the third electrodes. The first LED chip and the second LED chip are arranged in the mounting area. Each LED chip includes an anode pad and a cathode pad. The first to fourth electrodes are respectively connected to the four pads of the first and the second LED chips via a plurality of metal wires, and no metal wire connection is formed between the first and the second LED chips.

Abstract: A Group III nitride semiconductor device of the present invention is obtained by laminating at least a buffer layer (12) made of a Group III nitride compound on a substrate (11), wherein the buffer layer (12) is made of AlN, and a lattice constant of a-axis of the buffer layer (12) is smaller than a lattice constant of a-axis of AlN in a bulk state.

Abstract: A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.

Abstract: Improved arrays of high voltage vertical-emitting LEDs that generate substantially lower heat than conventional LED arrays are provided. In particular, the present invention provides an array of high-voltage vertical LEDs each of which includes a first electrode positioned on a light-emitting face and a second electrode. A conductive matrix surrounds each LED and electrically communicates with each of the electrodes while an electrically-insulating material is positioned between adjacent diodes such that a first electrical current path is defined between the second and first electrodes through each diode. An isolating material is positioned in the conductive matrix between adjacent LEDs to isolate the adjacent second electrodes from one another. Further positioned between adjacent diodes is a material capable of permanently lowering its resistance to provide an alternate electrical pathway following a failure of an individual LED. High reliability high voltage vertical LED arrays are thereby provided.

Abstract: A light-emitting diode (LED) package including a substrate, an LED chip, a polarizer, and a supporter is provided. The LED chip is disposed on the substrate. The polarizer is disposed above the LED chip. The supporter is disposed on the substrate for supporting the polarizer.

Abstract: An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method includes: directing incident light through a pattern of clear regions transparent to the incident light in an opaque-to-the-incident-light region of a photomask, through a lens and onto a photodiode formed in a substrate, the photodiodes electrically connected to a light emitting diode formed in the substrate, the light emitting diode emitting light of different wavelength than a wavelength of the incident lights; measuring an intensity of emitted light from light emitting diode; and adjusting alignment of the photomask to the substrate based on the measured intensity of emitted light.

Abstract: A low-cost conductive carrier element provides structural support to a light emitting device (LED) die, as well as electrical and thermal coupling to the LED die. A lead-frame is provided that includes at least one carrier element, the carrier element being partitioned to form distinguishable conductive regions to which the LED die is attached. When the carrier element is separated from the frame, the conductive regions are electrically isolated from each other. A dielectric may be placed between the conductive regions of the carrier element.

Abstract: A galvanic isolation integrated circuit system includes a semiconductor substrate; a layer of thermally conductive material, e.g., CVD nano- or poly-diamond thin film or boron nitride CVD thin film, formed over the semiconductor substrate; a first integrated circuit structure formed over the layer of thermally conductive material; a second integrated circuit structure formed over the layer of thermally conductive material, the second integrated circuit structure being spaced apart from the first integrated circuit structure; and a galvanic isolation structure formed over the layer of thermally conductive material between the first and second integrated circuit structures and connected to the first integrated circuit structure and the second integrated circuit structure.

Abstract: A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.

Abstract: An aspect of the present invention provides a semiconductor device, in which densely packaging and high performance of optical elements are realized by a simple manufacturing process. The semiconductor device includes: a first chip module, a second chip module and a bonding layer. The first chip module includes a plurality of optical chips that are bonded within a substantially same plane with a first resin layer. The second chip module includes a plurality of control semiconductor chips and a plurality of connecting chips. The connecting chips include conductive materials piercing through the connecting chips. The control semiconductor chips and the connecting chips are bonded within a substantially same plane with a second resin layer. And the optical chips and the control semiconductor chips are electrically connected through the connecting chips.

Abstract: Solid-state transducers (“SSTs”) and SST arrays having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a first contact at the first side and electrically coupled to the first semiconductor material, and a second contact extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. A carrier substrate having conductive material can be bonded to the first and second contacts.

Abstract: Disclosed is a semiconductor integrated circuit device including a transmitting circuit and a receiving coil inductively coupled to a transmitting coil. The transmitting circuit transmits data by supplying a current through the transmitting coil not at the time of transition of data but at every rising edge or falling edge of a clock used in transmission of data. At every rising edge or falling edge of the clock, a receiving circuit captures a voltage induced in the receiving coil due to the current flowing through the transmitting coil, reproduces the transmitted data and outputs the reproduced data.

Abstract: Disclosed is a light emitting device, including: a substrate, a light emitting structure provided on the substrate, which includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer laminated in sequential order, a transmissive electrode layer arranged on the light emitting structure, an electrode provided on the light emitting structure. Here, the electrode includes a pad electrode and a finger electrode, and an insertion element is placed between the finger electrode and the second conductive semiconductor layer, wherein the insertion element is formed such that at least one region thereof overlaps with the finger electrode in a vertical direction. Since the insertion element is formed under the finger electrode, it is possible to prevent light emitted by the active layer from being absorbed by the finger electrode. Accordingly, luminous efficacy of the light emitting device may be further enhanced.

Abstract: An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The radiation-emitting semiconductor components each include an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the radiation-emitting semiconductor components that is remote from the carrier substrate. The radiation-emitting semiconductor components are provided with an electrically insulating layer, which in each case has a cutout in a region of the first contact area. Conductive structures are arranged in regions on the electrically insulating layer.

Abstract: A light-emitting apparatus can prevent a shadow mask from contacting a light-emitting medium to suppress damage of the medium, by using a conductive layer formed on a device isolation layer as a pressing member for the shadow mask, and can attain more secure conduction between a second electrode and an auxiliary electrode. The apparatus can be formed by forming first and auxiliary electrodes on a substrate; forming a device isolation layer between the first electrodes and forming an opening on each of the first and auxiliary electrodes; forming a conductive layer on the device isolation layer to cover the openings above the auxiliary electrodes; bringing a shadow mask into contact with the conductive layer and forming a light-emitting medium in a thickness smaller than the thickness of the conductive layer; and forming a second electrode to cover the light-emitting medium, the device isolation layer, and the conductive layer.