With Contoured External Surface (e.g., Dome Shape To Facilitate Light Emission) Patents (Class 257/95)
  • Patent number: 10374124
    Abstract: A light emitting device, according to one embodiment, may comprise: a substrate having a pattern part disposed on the upper surface thereof; a first buffer layer disposed on the substrate; a second buffer later disposed on the first buffer layer; a first conductive semiconductor layer disposed on the second buffer layer; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; and a void layer disposed on the first buffer layer corresponding to the pattern part of the substrate. By further forming a void on the buffer layer, the embodiment has the effect of more effectively preventing defects caused by a potential difference.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: August 6, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jung Hun Jang, Seung Keun Nam, Jeong Soon Yim, Won Hee Choi
  • Patent number: 10367118
    Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 ?m, and the thickness of the lower semiconductor stack is small than or equal to 1 ?m.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: July 30, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin
  • Patent number: 10319881
    Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.
    Type: Grant
    Filed: December 26, 2016
    Date of Patent: June 11, 2019
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Patent number: 10211373
    Abstract: A light-emitting device comprises a light-emitting stack comprising a first surface, a roughened surface, and a sidewall connecting the first surface and the roughened surface; an electrode structure formed on the roughened surface of the light-emitting stack; a dielectric layer formed on the first surface of the light-emitting stack; a barrier layer covering the dielectric layer; a first reflective electrode between the barrier layer and the first surface of the light-emitting stack; and a passivation layer covering the sidewall of the light-emitting stack and the roughened surface of the light-emitting stack which is not occupied by the electrode structure, wherein the electrode structure is surrounded by the passivation layer, and the passivation layer contacts an surface of the electrode structure and terminates at the surface of the electrode structure.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: February 19, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Jan Way Chien, Tzchiang Yu, Hsiao Yu Lin, Chyi Yang Sheu
  • Patent number: 10164159
    Abstract: A light-emitting diode (LED) package includes: a reflective structure including a cavity, a bottom portion having a through hole, and a sidewall portion surrounding the cavity and the bottom portion and having an inclined inner side surface; an electrode pad inserted into the through hole; an LED on the bottom portion in the cavity, the LED including a light-emitting structure electrically connected to the electrode pad and a phosphor formed on the light-emitting structure; and a lens structure filling the cavity and formed on the reflective structure.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: December 25, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-sub Lee, Yong-il Kim, Han-kyu Seong, Young-jin Choi
  • Patent number: 10153400
    Abstract: An optoelectronic semiconductor device includes a semiconductor body having a semiconductor region and an active region, wherein the semiconductor region has a covering layer forming a radiation passage surface of the semiconductor body on a side facing away from the active region, the semiconductor region has a current-spreading layer arranged between the covering layer and the active region; the semiconductor device has a contact for the electrical contacting of the semiconductor region; the contact adjoins the current-spreading layer in a terminal area; the contact adjoins the covering layer in a barrier region; and the barrier region runs parallel to the active region and is arranged closer to the active region than the radiation passage surface.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: December 11, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Guido Weiss
  • Patent number: 10069052
    Abstract: A light-emitting element includes a light transmissive substrate, a semiconductor layered body, and first and second light reflecting members. The semiconductor layered body is formed on a first main surface of the light transmissive substrate. The first light reflecting member covers a first lateral surface, a second lateral surface, a fourth lateral surface, and a second main surface of the light transmissive substrate. The second light reflecting member covers a surface of the semiconductor layered body that is opposite from a surface on which the light transmissive substrate is disposed. A cross-sectional plane of the light transmissive substrate parallel to the first main surface has a concave figure that includes a recess, and the third lateral surface includes one or more surfaces defining the recess.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: September 4, 2018
    Assignee: NICHIA CORPORATION
    Inventor: Yukitoshi Marutani
  • Patent number: 10008482
    Abstract: Light emitting assemblies comprise a plurality of Light Emitting Diode (LED) dies arranged and attached to common substrate to form an LED array having a desired optimum packing density. The LED dies are wired to one another and are attached to landing pads on the substrate for receiving power from an external electrical source via an interconnect device. The assembly comprises a lens structure, wherein each LED die comprises an optical lens disposed thereover that is configured to promote optimal light transmission. Each optical lens has a diameter that is between about 1.5 to 3 times the size of a respective LED die, and is shaped in the form of a hemisphere. Fillet segments are integral with and interposed between the adjacent optical lenses, and provide sufficient space between adjacent optical lenses so that the diameters of adjacent optical lenses do not intersect with one another.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: June 26, 2018
    Assignee: Bridgelux, Inc.
    Inventors: Wenhui Zhang, Tao Tong, Zhengqing Gan
  • Patent number: 9991238
    Abstract: Proposed is a light source comprising first and second LED light sources. Each of the first and second LED light sources have: a semiconductor diode structure adapted to generate light; and a light output section above the semiconductor diode structure adapted to output light from the semiconductor diode structure in a light output direction, the area of the light output section being less than the area of the semiconductor diode structure. The second LED light source is arranged above and at least partially overlapping the first LED light source with non-aligned light output sections with respect to the light output direction.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: June 5, 2018
    Assignee: Koninklijke Philips N.V.
    Inventors: Floris Maria Hermansz Crompvoets, Norbertus Antonius Maria Sweegers, Hugo Johan Cornelissen, Marc Andre de Samber
  • Patent number: 9966260
    Abstract: Laser lift-off methods are described in which optical flatness is provided on the back side of a temporary substrate using either an optical layer or optical liquid. A laser is directed through the optical layer or optical liquid and a back side of the temporary substrate to decompose a portion of a process layer supported on a front side of the temporary substrate, followed by separation of the process layer and the temporary substrate.
    Type: Grant
    Filed: August 9, 2016
    Date of Patent: May 8, 2018
    Assignee: APPLE INC.
    Inventors: Clayton Ka Tsun Chan, Ion Bita, Ranjith Samuel E. John, Alfred F. Renaldo, Jie Fu, Sudirukkuge T. Jinasundera, An-Chun Tien
  • Patent number: 9929329
    Abstract: Embodiments relate to a light emitting device package including a first lead frame and a second lead frame spaced apart from each other, a light emitting device disposed on the first lead frame, a reflecting part disposed on the first lead frame and the second lead frame and a light transmitting part including a lower end part disposed on the reflecting part, the first lead frame and the second lead frame and an upper end part disposed on the lower end part. The upper end part has a side surface vertically aligned with a location of a sidewall between upper and lower ends of the reflecting part.
    Type: Grant
    Filed: September 3, 2014
    Date of Patent: March 27, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Bong Kul Min, Won Jung Kim, Heung Ju Lee, Chang Man Lim
  • Patent number: 9929199
    Abstract: There is provided a radiation detector including: a plurality of photoelectric conversion devices, each photoelectric conversion device formed at least partially within an embedding layer and having a light receiving surface situated at least partially outside of the embedding layer, and a plurality of scintillator crystals, at least a first scintillator crystal of the plurality of scintillator crystals in contact with at least one light receiving surface at a proximal end, wherein a cross-section of the first scintillator crystal at the proximal end is smaller than a cross-section of the first scintillator crystal at a distal end.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: March 27, 2018
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Takahiro Igarashi, Izuho Hatada, Takeshi Kodama, Kiwamu Adachi, Shuichi Oka, Shun Mitarai, Hiizu Ootorii, Shusaku Yanagawa, Katsuji Matsumoto
  • Patent number: 9893251
    Abstract: A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: February 13, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-sub Kim, Yong-il Kim, Dong-gun Lee, Kyung-wook Hwang, Jin-sub Lee, Min-gyeong Gwon
  • Patent number: 9887311
    Abstract: A semiconductor module includes a light emitting element, a semiconductor element including a light receptor circuit disposed to receive light from the light emitting element, a light-transmissive insulating body disposed between the light emitting element and the semiconductor element, at least one of a first surface thereof facing the semiconductor element and a second surface thereof facing the light emitting element including a ragged region, a first light-transmissive bonding resin formed between the light emitting element and the light-transmissive insulating body, and a second light-transmissive bonding resin formed between the semiconductor element and the light-transmissive insulating body.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: February 6, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tetsuya Kurosawa, Yoshihisa Imori
  • Patent number: 9870920
    Abstract: A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars is horizontally spaced apart by portions of the insulation layer. The plurality of semiconductor pillars is allocated in a periodic pattern. The method further includes epitaxially growing a III-V compound semiconductor film from top surfaces and sidewalls of the semiconductor pillars.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: January 16, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsin Ko, Cheng-Hsien Wu, Clement Hsingjen Wann
  • Patent number: 9856562
    Abstract: There is provided a semiconductor manufacturing device that supplies a source gas to a substrate installed in a reaction furnace and performs film formation processing to the substrate, including: a storage vessel which is disposed in the reaction furnace and which stores a metal raw material as a base of the source gas; an auxiliary vessel which is disposed at an upper side of the storage vessel in the reaction furnace and which is a bottomed vessel having an inlet port for the metal raw material; a connection pipe through which an outlet port for the metal raw material formed on the auxiliary vessel and an inside of the storage vessel are communicated with each other; a sealing plug for sealing the outlet port so as to be opened and closed freely; and heater units that heat an inside of the reaction furnace to a predetermined temperature so as to melt the metal raw material in the auxiliary vessel and the metal raw material in the storage vessel, and to a predetermined temperature required for film formatio
    Type: Grant
    Filed: July 8, 2015
    Date of Patent: January 2, 2018
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventor: Hajime Fujikura
  • Patent number: 9846154
    Abstract: A method for analyzing a metalloprotein and/or the interaction with its environment comprising the following steps: (a) Providing a medium that enhances the detection of the electromagnetic cross-section signal of metalloproteins, (b) Incorporating a metalloprotein to analyse into said medium, (c) Contacting said medium with electromagnetic radiation, (d) Obtaining the electromagnetic cross-section spectrum of said metalloprotein, (e) Determining from said electromagnetic cross-section spectrum at least one parameter related to one or several analytes of interest.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: December 19, 2017
    Assignee: Ecole Polytechnique Fédérale de Lausanne (EPFL)
    Inventors: Guillaume Suárez, Christian Santschi, Olivier Martin
  • Patent number: 9847458
    Abstract: A light emitting diode includes an n-type semiconductor layer disposed on a substrate; a p-type semiconductor layer disposed on a portion of the n-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer and generating light through recombination of electrons and holes; an ohmic contact layer disposed on the p-type semiconductor layer and including an indium tin oxide (ITO) layer doped with a metal, a transparent conductive layer disposed on the ohmic contact layer to a different thickness than the ohmic contact layer and including an undoped ITO layer, and a reflective layer disposed on the transparent conductive layer and including an oxide layer. Accordingly, the light emitting diode exhibits excellent current-voltage characteristics through improvement in reliability and electrical conductivity of the ohmic contact layer while improving luminous efficacy through the reflective layer formed of an oxide.
    Type: Grant
    Filed: February 29, 2016
    Date of Patent: December 19, 2017
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: So Ra Lee, Yeo Jin Yoon
  • Patent number: 9812622
    Abstract: A light-emitting element includes: a light transmissive substrate having a first main surface, a second main surfaces, a first lateral surface, a second lateral surface, a third lateral surface, and a fourth lateral surface; a semiconductor layered body; a first light reflection member; and a second light reflection member. A cross-sectional plane of the light transmissive substrate perpendicular to the first main surface and intersecting with the third lateral surface and the fourth lateral surface has a first concave figure having a first recess. The deepest portion of the first recess is arranged on an inner side of an outer periphery of the semiconductor layered body. The third lateral surface includes one or more surfaces defining the first recess.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: November 7, 2017
    Assignee: Nichia Corporation
    Inventor: Yukitoshi Marutani
  • Patent number: 9660085
    Abstract: Techniques are disclosed for forming a GaN transistor on a semiconductor substrate. An insulating layer forms on top of a semiconductor substrate. A trench, filled with a trench material comprising a III-V semiconductor material, forms through the insulating layer and extends into the semiconductor substrate. A channel structure, containing III-V material having a defect density lower than the trench material, forms directly on top of the insulating layer and adjacent to the trench. A source and drain form on opposite sides of the channel structure, and a gate forms on the channel structure. The semiconductor substrate forms a plane upon which both GaN transistors and other transistors can form.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: May 23, 2017
    Assignee: Intel Coporation
    Inventors: Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Hoon Sung, Sanaz K. Gardner, Ravi Pillarisetty
  • Patent number: 9634200
    Abstract: A semiconductor light emitting device comprises a supporting substrate that has light reflecting characteristics; a wavelength conversion layer that is disposed on the supporting substrate, and contains semiconductor nanoparticles developing a quantum size effect; an optical semiconductor laminate that is disposed on the wavelength conversion layer and has light emitting characteristics; and a photonic crystal layer that is disposed on the optical semiconductor laminate, and that has first portions having a first refractive index and second portions having a second refractive index different from the first refractive index, the first portions and the second portions being arranged in a two-dimensional cyclic pattern.
    Type: Grant
    Filed: January 7, 2016
    Date of Patent: April 25, 2017
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Takuya Kazama, Wataru Tamura, Yasuyuki Miyake
  • Patent number: 9586526
    Abstract: An exterior mirror system for a vehicle includes an exterior mirror assembly having a folding portion and a non-folding portion configured for mounting at a side of a vehicle. A reflective element is disposed at the folding portion. The reflective element is mounted to a backing plate that is supported by an electrical actuator operable to move the reflective element. The exterior mirror assembly includes an indicator having at least one light emitting diode that emits an intensity of light when electrically operated. During low ambient lighting conditions at night, the intensity of light emitted by the at least one light emitting diode of the indicator is reduced under photosensor control to a nighttime intensity level. The nighttime intensity level is greater than about 0.3 candela and is less than about 200 candelas. The indicator may include a module and the module may be substantially water impervious.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: March 7, 2017
    Assignee: Magna Mirrors of America, Inc.
    Inventors: Todd W. Pastrick, Michiel P. van de Ven, Peter J. Whitehead, Rick Mousseau, Niall R. Lynam
  • Patent number: 9574743
    Abstract: Embodiments of the present invention provide separate optical devices operable to couple to a separate LED, the separate optical device comprising an entrance surface to receive light from a separate LED when the separate optical device is coupled to the separate LED, an exit surface opposite from and a distance from the entrance surface and a set of sidewalls. The exit surface can have at least a minimum area necessary to conserve brightness for a desired half-angle of light projected from the separate optical device. Furthermore, each sidewall is positioned and shaped so that rays having a straight transmission path from the entrance surface to that sidewall reflect to the exit surface with an angle of incidence at the exit surface at less than or equal to a critical angle at the exit surface.
    Type: Grant
    Filed: October 22, 2014
    Date of Patent: February 21, 2017
    Assignee: Illumitex, Inc.
    Inventors: Dung T. Duong, Paul N. Winberg, Matthew R. Thomas
  • Patent number: 9541682
    Abstract: The present invention provides a display device having excellent light energy conversion efficiency. The present invention relates to a display device including a light-diffusing layered body. The light-diffusing layered body includes a wavelength conversion layer containing optically isotropic semiconductor particles and a light-diffusing layer on at least one surface of the wavelength conversion layer. The light-diffusing layer contains a binder component and light-diffusing particles that contain an organic material or an inorganic material. The light-diffusing particles protrude in a range of 3 to 50% of the particle size of the light-diffusing particles from an outermost surface of the light-diffusing layer. The light-diffusing layer has projections and depressions on the outermost surface due to the light-diffusing particles protruding therefrom. The light-diffusing layer has a film thickness of 1 to 30 ?m.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: January 10, 2017
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Seiichi Isojima, Hiroshi Kojima, Hiroki Nakagawa
  • Patent number: 9530934
    Abstract: A light-emitting device includes a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode includes a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion includes a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 ?m.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: December 27, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chien-Hua Chou, Tai-Chun Wang, Biau-Dar Chen, Chih-Tsung Su
  • Patent number: 9515121
    Abstract: An exemplary light emitting diode includes a substrate; a first light emitting cell and a second light emitting cell disposed over the substrate and separated from each other; and an interconnection electrically connecting the first light emitting cell to the second light emitting cell. Each of the first and second light emitting cells includes a first conductive-type semiconductor layer, a second conductive-type semiconductor layer disposed over the first conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer. At least one of the first light emitting cell and the second light emitting cell includes a side surface inclined with respect to the substrate. The side surface includes a first inclined portion forming an acute angle with respect to the substrate, a second inclined portion forming an obtuse angle with respect to the substrate, and an inclination discontinuity section.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: December 6, 2016
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Se Hee Oh, Seom Geun Lee, Yeo Jin Yoon, Hyun Haeng Lee, Mae Yi Kim
  • Patent number: 9515240
    Abstract: A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: December 6, 2016
    Assignee: The Regents of the University of California
    Inventors: Frederic S. Diana, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 9472730
    Abstract: A light emitting device includes a light emitting element and a luminescent color conversion layer covering a light emitting surface of the light emitting element. The luminescent color conversion layer includes a transparent synthetic resin material and integrated particles provided inside the transparent synthetic resin material, each of the integrated particles being a mixture of phosphors and a dispersively binding material that are bonded to each other. The dispersively binding material has transparency and bondability to the phosphors. The luminescent color conversion layer is arranged such that primary light and secondary light are mixed to generate a mixed color light and such that the mixed-color light is emitted outside from the luminescent color conversion layer, the primary light being excitation light emitted by the light emitting element, and the secondary light being a portion of the primary light that has been is color-converted by an excitation of the phosphors.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: October 18, 2016
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Satoshi Wada, Kosei Fukui
  • Patent number: 9412904
    Abstract: A device for back-scattering an incident light ray, including: a host substrate; a structured layer; a first face in contact with a front face of the host substrate; a second flat face parallel to the first face; a first material and a second material which form, in a mixed plane, alternating surfaces at least one of whose dimensions is between 300 nm and 800 nm, the mixed plane is between the first and second face of the structured layer; wherein the refractive index of the first and of the second material are different, the structured layer is covered by a specific layer, the specific layer is made of a material which is different from the first and second materials of the structured layer, and the specific layer is crystalline and semi-conductive.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: August 9, 2016
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Soitec
    Inventors: Yohan Desieres, Philippe Gilet, Pascal Guenard
  • Patent number: 9391233
    Abstract: A method for manufacturing a light emitting device package is provided. In the method, a growth substrate including a plurality of light emitting devices disposed on a top surface of the growth substrate is prepared. A first package substrate having a bonding pattern corresponding to a portion of the plurality of light emitting devices is prepared, and the bonding pattern is disposed on a top surface of the first package substrate. The portion of the plurality of light emitting devices and the bonding pattern are bonded by disposing the top surface of the growth substrate to face the top surface of the first package substrate. The portion of the plurality of light emitting devices is separated from the growth substrate. The portion of the plurality of light emitting devices joined to the bonding pattern is packaged.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: July 12, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myong-soo Cho, Myeong-rak Son, Young-chul Shin, Seung-hwan Lee
  • Patent number: 9368940
    Abstract: To provide a semiconductor laser that suppresses end face destruction due to catastrophic optical damage (COD) to a light emission end face and has high output characteristics. An n-type clad layer, a current block layer, an active layer, and a p-type clad layer are provided over an n-type substrate whose major plane has an off-angle in a <1-100> direction from a (0001) plane. For example, the current block layer is arranged on both sides of a current constriction area. Then, the current block layer is arranged so as to be retracted from a cleavage plane (line). In this case, in the active layer having a quantum well structure that is crystal-grown over the n-type clad layer and the current block layer, the layer thickness of a window area from the cleavage plane (line) up to the end part of the current block layer is smaller than the layer thickness of the current constriction area (area between the current block layers).
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: June 14, 2016
    Assignee: Reneas Electronics Corporation
    Inventor: Fumito Miyasaka
  • Patent number: 9337387
    Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: May 10, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Patent number: 9324925
    Abstract: To provide a method of manufacturing at low cost a light emitting device that converts the wavelength of light radiated by a light emitting element and emits, the method includes: forming a phosphor layer on a translucent substrate; arranging a plurality of light emitting elements with a predetermined spacing, the light emitting elements having an electrode formed face provided with positive and negative electrodes respectively and arranged with the electrode formed faces on the top; embedding a resin containing phosphor particles so that an upper face of the embedded resin does not bulge over a plane containing the electrode formed faces; and curing the resin, and then cutting and dividing the cured resin, the phosphor layer and the translucent substrate into a plurality of light emitting devices each including one or more of the light emitting elements.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: April 26, 2016
    Assignee: NICHIA CORPORATION
    Inventors: Akinori Yoneda, Shinji Nakamura, Yoshiyuki Aihara, Hirokazu Sasa
  • Patent number: 9287336
    Abstract: An electronic device may be provided with a display such as an organic light-emitting diode display. The display may include an array of display pixels formed on a polymer substrate layer. The polymer substrate layer may include an contiguous layer of polyimide that forms a substrate layer in additional structures such as a polymer film and a flexible printed circuit. A first transition region may be interposed between the display and the polymer film, and a second transition region may be interposed between the polymer film and the flexible printed circuit. Metal traces may be formed on the polymer film and on the flexible printed circuit. A display driver integrated circuit may be mounted to the traces on the polymer film. The polymer film may form a U-shaped bend. The flexible printed circuit may be coupled to a printed circuit board in the device using hot bar solder connections.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: March 15, 2016
    Assignee: Apple Inc.
    Inventors: Wey-Jiun Lin, Sang Youn, Sang Ha Kim
  • Patent number: 9276170
    Abstract: A semiconductor light emitting element includes a laminated semiconductor layer including a light emitting layer that emits light by passing a current, the laminated semiconductor layer has a lower semiconductor bottom surface, a semiconductor side surface that rises from an edge of the lower semiconductor bottom surface upwardly and outwardly of the laminated semiconductor layer, and a lower semiconductor top surface that faces upward by extending inwardly of the laminated semiconductor layer from an upper edge of the semiconductor side surface, an edge of the lower semiconductor top surface includes first and second linear portions extending linearly and plural connecting portions connecting the first and second linear portions, and, when viewed from a direction perpendicular to the lower semiconductor top surface, each connecting portion is positioned inside a point of intersection of extended lines of the first and second linear portions connected to the connecting portion.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: March 1, 2016
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Honglin Wang, Eisuke Yokoyama
  • Patent number: 9263288
    Abstract: A method for lithography is disclosed. The method includes obtaining a self-organizing block-copolymer layer on a neutral layer overlying a substrate, the self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, the self-organizing block-copolymer layer furthermore comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components. Further, the method includes etching selectively a first polymer component of the self-organizing block-copolymer layer, thereby remaining a second polymer component. Still further, the method includes applying a plasma etching to the neutral layer using the second polymer component as a mask, wherein the plasma etching comprises an inert gas and H2.
    Type: Grant
    Filed: November 7, 2013
    Date of Patent: February 16, 2016
    Assignees: IMEC, Tokyo Electron Limited
    Inventors: Boon Teik Chan, Shigeru Tahara
  • Patent number: 9209350
    Abstract: When a belt-like nitride semiconductor stacking structure 110 having a principal plane of an m-plane is broken along a linear groove 104, two or more side surfaces may be formed on the lateral side thereof. This decreases the fabrication efficiency of the triangular prismatic m-plane nitride semiconductor light-emitting diode. To solve this problem, Angle X of not less than 75 degrees and not more than 105 degrees is formed between the linear groove 104 and one cleavage axis selected from the group consisting of an a-axis and a c-axis. Then, the belt-like nitride semiconductor stacking structure 110 was broken along the linear groove 104 to form a quadratic prismatic nitride semiconductor stacking structure 120. Subsequently, the quadratic prismatic nitride semiconductor stacking structure 120 is broken along another linear groove 106 to obtain a triangular prismatic m-plane nitride semiconductor light-emitting diode 130.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: December 8, 2015
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Mitsuaki Oya, Toshiya Yokogawa
  • Patent number: 9190590
    Abstract: A light-emitting element includes a first conductivity type semiconductor base, a plurality of first conductivity type protrusion-shaped semiconductors formed on the semiconductor base, and a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: November 17, 2015
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Akihide Shibata, Tetsu Negishi, Kenji Komiya, Yoshifumi Yaoi, Takeshi Shiomi, Hiroshi Iwata, Akira Takahashi
  • Patent number: 9184344
    Abstract: A light emitting device has a nanostructured layer with nanovoids. The nanostructured layer can be provided below and adjacent to active region or on a substrate or a template below an n-type layer for the active region, so as to reduce strain between epitaxial layers in the light emitting device. A method of manufacturing the same is provided.
    Type: Grant
    Filed: January 25, 2012
    Date of Patent: November 10, 2015
    Assignee: INVENLUX LIMITED
    Inventors: Jianping Zhang, Hongmei Wang, Chunhui Yan, Wen Wang, Ying Liu
  • Patent number: 9184348
    Abstract: An LED structure includes a substrate, an emitting multilayer structure, a plurality of microstructures and a transparent conductive layer. The emitting multilayer structure is formed on the substrate. The microstructures are spaced apart from each other on the light emitting multilayer structure, and an upper surface of each microstructure has a concave-convex surface. The transparent conductive layer is conformably covered over the light emitting multilayer structure and the microstructures. The transparent conductive layer has similar concave-convex surfaces due to the concave-convex surface of each microstructure. The light emitted from the emitting multilayer structure is changed due to the concave-convex surface of the transparent conductive layer, so that the phenomenon of total internal reflection can be reduced so as to increase the light transmittance.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: November 10, 2015
    Assignee: Lextar Electronics Corporation
    Inventor: Shiou-Yi Kuo
  • Patent number: 9147808
    Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: September 29, 2015
    Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
    Inventors: I-Kai Lo, Yu-Chi Hsu, Cheng-Hung Shih, Wen-Yuan Pang, Ming-Chi Chou
  • Patent number: 9130134
    Abstract: According to one embodiment, a semiconductor light emitting device includes: a stacked body and an insulative optical path control section. The stacked body includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer, the second semiconductor layer, and the light emitting layer are stacked along a stacking direction. The insulative optical path control section penetrates through the second semiconductor layer and the light emitting layer, has a refractive index lower than refractive index of the first semiconductor layer, refractive index of the second semiconductor layer, and refractive index of the light emitting layer. The insulative optical path control section is configured to change traveling direction of light emitted from the light emitting layer.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: September 8, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Mitsugi, Shinya Nunoue
  • Patent number: 9117972
    Abstract: The light-emitting device has a semiconductor layer including a p-layer, a light-emitting layer, and an n-layer, which are formed of a Group III nitride semiconductor, and an n-electrode on the n-layer. The device also has a device isolation trench which runs along the outer periphery of the semiconductor layer and which provides the semiconductor layer with a mesa shape; and an insulation film continuously provided on first to third regions, the first region being an outer peripheral region of the n-layer, the second region being the side surface of the trench, and the third region being the bottom surface of the device isolation trench. The n-electrode consists of two pad portions and a wire trace portion. The outer peripheral wire trace portion is formed as a frame completely contouring the periphery of the device.
    Type: Grant
    Filed: December 5, 2012
    Date of Patent: August 25, 2015
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Koichi Mizutani, Ryohei Inazawa, Yuhei Ikemoto, Tomoyuki Tainaka
  • Patent number: 9070841
    Abstract: According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: June 30, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinji Yamada, Hiroshi Katsuno, Satoshi Mitsugi, Shinya Nunoue
  • Patent number: 9054259
    Abstract: The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: June 9, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung-wook Hwang, Cheol-Soo Sone, Geon-wook Yoo, Dong-hoon Lee, Nam-goo Cha, Jae-hyeok Heo
  • Patent number: 9029885
    Abstract: There is provided an electrode foil, which can show superior light scattering, while preventing short circuit between electrodes. The electrode foil of the present invention comprises a metal foil having a thickness of from 1 ?m to 250 ?m, wherein the electrode foil comprises, on at least one outermost surface thereof, a light-scattering surface having a Pv/Pp ratio of 2.0 or higher, wherein the Pv/Pp ratio is a ratio of a maximum profile valley depth Pv of a profile curve to a maximum profile peak height Pp of the profile curve as measured in a rectangular area of 181 ?m×136 ?m in accordance with JIS B 0601-2001.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: May 12, 2015
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Yoshinori Matsuura, Nozomu Kitajima, Toshimi Nakamura, Masaharu Myoi
  • Patent number: 9029886
    Abstract: An organic light emitting diode (OLED) display includes: a display layer including a front display layer configured to display an image at a front of the OLED display and a bending display layer bent at an end of the front display layer, and a thin film encapsulation layer covering the display layer. The thin film encapsulation layer includes a front encapsulation layer disposed on the front display layer and a bending encapsulation layer disposed on the bending display layer and having a plurality of pores.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: May 12, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jun Namkung, Soon Ryong Park
  • Patent number: 9029901
    Abstract: An electronic component has a housing body which comprises a semiconductor chip in a recess. The semiconductor chip in the recess is embedded in a casting compound made of a first plastic material having a first glass transition temperature. A cover element made of a second plastic material having a second glass transition temperature is arranged above the recess. The second glass transition temperature is lower than the first glass transition temperature.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: May 12, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Johann Ramchen, Christina Keith, Bert Braune
  • Patent number: 9029887
    Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: May 12, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Martin F. Schubert, Kevin Tetz
  • Patent number: RE46058
    Abstract: An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination. The semiconductor material can have a cutout formed therein and a portion of the electrode can be formed outside of the cutout and a portion of the electrode can be formed inside of the cutout. The portion of the electrode outside the cutout can be electrically isolated from the semiconductor material by the dielectric material.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: July 5, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Frank T. Shum