Abstract: A method to provide positional information to a user of a hybrid reality (HR) system includes receiving a signal at the HR system from a beacon device located in a real-world environment, determining a position of the beacon device based on the signal, and providing a stimulus to the user on the HR system based on the position of the beacon device. A head-mounted display (HMD) includes a display, a structure, coupled to the display and adapted to position the display in a field-of-view (FOV) of the user, and a processor, coupled to the display, the processor configured to perform the method.

Abstract: An organic EL display device with higher resolution, suppressed power consumption while being driven and low manufacturing cost, and no color mixing and color shifting between subpixels adjacent to each other is provided. In a B subpixel, a first separation layer is provided between a common blue-light-emitting layer and a common green-light-emitting layer. In a G subpixel, a second separation layer is provided between the common green-light-emitting layer and a common red-light-emitting layer.

Abstract: Disclosed in an embodiment is a semiconductor device including a light-emitting structure which includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a recess passing through the second conductive semiconductor layer, the active layer, and a portion of the first conductive semiconductor layer, a conductive layer electrically connected to the second conductive semiconductor layer, and a bonding pad disposed to be spaced apart from the light-emitting structure, wherein the active layer is divided into an inactive region and an active region by the recess, the conductive layer is electrically connected to the active region, and the conductive layer includes a stepped portion overlapping the recess in a vertical direction.

Abstract: A system includes: a heat sink module with a plurality of first through-holes linking its top and bottom surfaces and a plurality of grooves on the bottom surface, wherein each groove passes through a respective sequence of the first through-holes; and a driving circuit module with a plurality of conductive connectors and electrical driving surfaces that are disposed substantially perpendicular to the top and bottom surfaces of the heat sink module, wherein each conductive connector lies partially within a respective groove in the bottom surface of the heat sink module, the conductive connectors include internal connectors that each links at least two of the first through-holes in a respective sequence of first through-holes, and external connectors that each links at least one of the first through-holes in a respective sequence of first through-holes to an electrical driving surfaces of the driving circuit module.

Abstract: Provided is a fluorescent material having a composition of rare earth aluminum-gallate, which radiates light in not only a visible light region but also a near-infrared region and has improved light emission intensity in a near-infrared region. The fluorescent material has a composition of rare earth aluminum-gallate, including at least one rare earth element Ln selected from the group consisting of Y, Gd, Sc, Lu, and La; at least one element selected from Al and Ga; Ce; and Nd. When a total molar composition ratio 5 of Al and Ga is used as a basis, a total molar ratio of Ln, Ce, and Nd is 3; a molar ratio of Ce is a product of 3 and a value of a parameter x; a molar ratio of Nd is a product of 3 and a value of a parameter y. The parameter x is in a range of 0.03 or more and 0.015 or less. The parameter y is in a range of 0.002 or more and 0.06 or less.

Abstract: The present invention relates to a display device, and particularly, to a display device using a semiconductor light emitting device. The display device includes a substrate including an electrode, a plurality of light emitting devices assembled on the substrate, and a color conversion part stacked on the plurality of semiconductor light emitting devices and converting a color. Specifically, the color conversion part includes: a porous layer, a wavelength conversion layer, and a reflective layer, wherein the wavelength conversion layer is disposed between the porous layer and the reflective layer, and the porous layer is formed of an electro-polishable porous terminal. A surface of the reflective layer includes a first region and a second region surrounded by the first region, the second region has roughness higher than that of the first region, and a plurality of first protrusions are disposed in the second region.

Abstract: A room temperature curable organopolysiloxane composition for protecting electric/electronic parts is disclosed. The composition comprises: (A) an organopolysiloxane having a viscosity at 25° C. of 20 to 1,000,000 mPa·s and having at least two silicon atom-bonded hydroxyl groups or silicon atom-bonded alkoxy groups in a molecule; (B) an alkoxysilane represented by the following general formula or a partial hydrolysis condensation product thereof: R1aSi(OR2)(4-a) wherein R1 is a monovalent hydrocarbon group having a carbon number of 1 to 12, R2 is an alkyl group having a carbon number of 1 to 3, and subscript “a” is an integer of 0 to 2; (C) a mercaptobenzothiazole based compound; (D) zinc oxide powder and/or zinc carbonate powder; and (E) a catalyst for condensation reactions. The composition and/or a cured product thereof can protect electric/electronic parts from corrosive gases such as hydrogen sulfide gas and sulfuric acid contained in the atmosphere.

Abstract: A light emitting device includes a first light emitting element including a rectangular first light extraction surface, a second light emitting element including a rectangular second light extraction surface and emitting light having an emission peak wavelength different from an emission peak wavelength of the first light emitting element, and a light-transmissive member covering the first light extraction surface and the second light extraction surface. The light-transmissive member includes a first light-transmissive layer facing the first light extraction surface and the second light extraction surface, a wavelength conversion layer located on the first light-transmissive layer, and a second light-transmissive layer located on the wavelength conversion layer. The first light-transmissive layer contains a first matrix and first diffusive particles. The wavelength conversion layer contains a second matrix and wavelength conversion particles.

Abstract: A flexible display apparatus including a protective film is provided. The protective film can include penetrating holes extending in parallel in a direction perpendicular to a bending direction. Deformation preventing elements having the modulus of elasticity higher than the protective film can be disposed in the penetrating holes of the protective film. The protective film and the deformation preventing elements can be coupled with a device substrate including a light-emitting device, an encapsulating layer and a barrier layer, which are sequentially stacked on the device substrate by an adhesive layer. The adhesive layer can include a first adhesive element overlapping with the protective film, and second adhesive elements overlapping with the deformation preventing elements. The second adhesive elements can have the modulus of elasticity lower than the first adhesive element. Thus, in the flexible display apparatus, the deformation of the protective film due to a bending stress can be prevented.

Abstract: A system can include a light emitting diode (LED) and a transparent structure disposed over the LED. The transparent structure includes a first surface that reflects light extracted from the LED and incident on the first surface. The transparent structure also includes an exit surface opposite the first surface. The exit surface includes a first area that is textured to diffuse light over a first angular range and a second area that is textured to diffuse light over a second angular range. The second angular range is wider than the first angular range.

Abstract: A light emitting device includes: a substrate; a first electrode and a second electrode provided at a distance from each other on the substrate and extending in one direction; a plurality of light emitting diodes provided between the first electrode and the second electrode, and connected to the first electrode and the second electrode; and a residual pattern provided between at least one of the plurality of light emitting diodes and the substrate.

Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.

Abstract: A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Abstract: A side view LED module is disclosed. The side view LED module includes: a mount substrate; a side view LED package including an LED unit and a body including a first side to which the LED unit is bonded, a second side parallel to the first side, a third side orthogonal to the first and second sides and facing the mount substrate, and terminals formed on the first, second, and third sides; and solder joints through which the terminals are electrically connected to the mount substrate. Each of the terminals includes an opening formed at the second side and a concave electrode extending from the opening toward the first side and recessed relative to the third side. Each of the solders fills only a portion of an inner space of the corresponding concave electrode and includes a base portion formed on the third side and inner fillets extending upward along the inner wall surfaces of the concave electrode from the base portion.

Abstract: The invention relates to an optoelectronic component (100) comprising a semiconductor chip (1) configured for emitting radiation, a conversion element (2) comprising quantum dots (5) and configured for wavelength conversion of radiation, wherein the conversion element (2) comprises a layer structure (7) having a plurality of inorganic barrier layers (31, 32, 33, 34), wherein the inorganic barrier layers (31, 32, 33, 34) are spatially separated from one another at least regionally by a hybrid polymer (4), wherein the hybrid polymer (4) comprises organic and inorganic regions that are covalently bonded to one another, wherein the quantum dots (5) are embedded in the hybrid polymer (4) and/or at least in one of the barrier layers (31, 32, 33, 34).

Abstract: A light emitting device is disclosed and includes an emission source configured to emit a primary blue light and a wavelength-converting element configured to convert the primary blue light to a secondary light having a correlated color temperature (CCT) in the range of 1600K-2500K and color rendering index (CRI) in the range of 40-60, the wavelength-converting element including a red phosphor material having a peak emission wavelength that is less than 620 nm and a green phosphor material having a peak emission wavelength that is greater than 530 nm. The device may exhibit a melanopic/photopic ratio of less than 0.25 and/or may exhibit a radiometric power fraction of light having a wavelength below 530 nm below 0.1.

Abstract: A method for manufacturing a light-transmissive member includes: providing a supporting member, and a light-transmissive sheet disposed on the supporting member, the light-transmissive sheet including: a first layer containing substantially no phosphor, and a second layer containing a phosphor; and forming a plurality of light-transmissive members from the light-transmissive sheet by dividing the light-transmissive sheet with a blade over the supporting member, such that each light-transmissive member includes: a first portion formed by separation of the first layer by a first crevice, the first portion containing substantially no phosphor, and a second portion formed by separation of the second layer by a second crevice, the second portion containing a phosphor, wherein one of the first portion and the second portion is layered on the other of the first portion and the second portion.

Abstract: A light emitting diode includes a current blocking layer interposed between a first connection pad and a first conductivity type semiconductor layer to improve efficiency in spreading of electric current supplied to the first conductivity type semiconductor layer.

Abstract: To provide an illumination device that has a simple configuration and can be assembled easily, and can reduce production cost. An illumination device includes a light source, a reflective layer disposed to reflect light from the light source and to direct the light out of the illumination device to provide illumination, a base layer made of thermoformed resin provided at the reflective layer to hold the light source, and conductors disposed on the base layer and connected to the light source to supply power to the light source.

Abstract: A filament includes a radiation-transmissive substrate, a plurality of LEDs, and a converter layer, wherein the substrate has an upper side and a lower side facing away from the upper side, the LEDs being arranged on the upper side of the substrate, the converter layer covers the LEDs, the upper side and the lower side of the substrate, and the converter layer has a first sublayer on the upper side and a second sublayer on the lower side, the converter layer is configured to obtain an improved radiation profile of the filament, along a lateral direction, the converter layer has a continuously varying vertical layer thickness, the lateral direction is a lateral longitudinal direction parallel to a main extension surface of the substrate, and the substrate has a length expanding along the lateral longitudinal direction that is greater than a width of the substrate along a lateral transverse direction.

Abstract: A light-emitting diode, comprising a substrate that has a first surface and an opposing second surface. A reflection layer is disposed on the first surface of the substrate and a light-emitting diode structure is arranged on the second surface of the substrate. The light-emitting diode structure includes a first semiconducting layer, an active layer and a second semiconducting layer disposed consecutively on the second surface. A plurality of protruding asymmetric micro-structured elements define at least a part of the second surface of the substrate such that at least a portion of a surface of each micro-structured element is disposed at an obtuse angle to the first surface of the substrate when measured from within the respective micro-structured element. The first semiconducting layer and the second semiconducting layer respectively have a first electrode and a second electrode.

Abstract: An optoelectronic assembly is provided in different embodiments. The optoelectronic assembly has the following; a printed circuit board; at least one optoelectronic first component which is arranged on a first face of the printed circuit board; a heat sink which has a first surface that is arranged on a second printed circuit board face facing away from the first component, wherein a boundary surface extends between the second face and the first surface; and at least one first welding connection, by means of which the heat sink is directly connected to the printed circuit board in a bonded manner and which together with the boundary surface forms a first cut surface, the first component at least partly overlapping the cut surface.

Abstract: Aspects of the present disclosure are directed to a composite light source which includes at least one blue light source having peak wavelength in the range of about 400 nm to about 460 nm; at least one yellow-green garnet phosphor; and at least one narrow-band red-emitting down-converter. Such composite light source may have a Lighting Preference Index (LPI) of at least 120. In other aspects the disclosure is directed to composite light source comprising at least one blue light source having peak wavelength in the range of about 400 nm to about 460 nm; at least one yellow-green garnet phosphor; and at least one broad red down-converter. In this latter aspect the composite light source may have a Lighting Preference Index (LPI) of at least 120. Numerous other aspects are provided.

Abstract: Disclosed is a luminaire (1) comprising a circular light guide (10), the light guide comprising an edge portion (11) in between a first major surface (15) and a second major surface (17), at least part (16) of the first major surface guide tapering in a direction away from said edge portion; a plurality of solid state lighting elements (40) arranged along said edge portion; and a plurality of outcoupling elements (30) arranged in a pattern on the second major surface of the circular light guide. The luminaire (1) may further include a controller (50) for individually controlling the solid state lighting elements (40) such as to configure the luminous output, e.g. the beam profile, of the luminaire.

Abstract: An embodiment of present disclosure discloses a light-emitting device which includes a light-emitting unit, a transparent covering structure, a first reflective structure, a second reflective structure, and a wavelength conversion structure. The light-emitting unit includes a light-emitting surface, a bottom surface opposite to the light-emitting surface, a side surface, a first conductive electrode, and a second conductive electrode. The first conductive electrode and the second conductive electrode are located on the bottom surface. The transparent covering structure covers the light-emitting surface and the side surface. The first reflective structure surrounds the transparent covering structure. The second reflective structure is disposed under the first reflective structure and surrounds the first conductive electrode and the second conductive electrode. The wavelength conversion structure is disposed on the first reflective structure and the transparent covering structure.

Abstract: An organic light-emitting diode (OLED) component includes a substrate; a pixel defining layer and a plurality of first electrodes over the substrate; an insulating layer correspondingly disposed over the pixel defining layer; a first light-emitting layer over each first electrode; and a charge generation layer over the first light-emitting layer. The plurality of first electrodes are physically separated from one another by the pixel defining layer. The insulating layer is configured to facilitate manufacturing of the OLED component, such that after formation of the charge generation layer without a mask, portions thereof positionally corresponding to any two adjacent first electrodes are physically separated by the insulating layer. The OLED component can be a white light organic light-emitting diode (WOLED) component including at least one other light-emitting layer in addition to the first light-emitting layer.

Abstract: A wavelength conversion device includes a substrate, a first glue substance, a wavelength conversion structure, and a second glue substance. The substrate includes a first surface, a second surface, and an axis. The first glue substance is disposed between the wavelength conversion structure and the first surface and surrounds the axis. The wavelength conversion structure is disposed on the first glue substance and surrounds the axis. The wavelength conversion structure includes a first bonding surface, a first lateral surface, and a second lateral surface. The first bonding surface faces to the first glue substance and is connected between the first lateral surface and the second lateral surface. The first lateral surface faces in the direction away from the axis, whereas the second lateral surface faces in the direction close to the axis. The second glue substance is connected to the first lateral surface and surrounds the axis.

Abstract: An organic electroluminescence device according to one aspect of the disclosure includes a base material including a recessed portion on an upper face, and a light emitting element including a reflective layer, a filling layer having optical transparency, a first electrode having optical transparency, an organic layer including at least a light emitting layer, and a second electrode having optical transparency. The reflective layer is disposed at least on a surface of the recessed portion. The filling layer is disposed at an inside of the recessed portion with the reflective layer interposed between the recessed portion and the filling layer. The first electrode is disposed at least on an upper-layer side of the filling layer. The organic layer is disposed on an upper layer of the first electrode. The second electrode is disposed on an upper-layer side of the organic layer. The organic electroluminescence device includes a display region that is divided into a plurality of unit regions.

Abstract: A method of manufacturing a light emitting device includes mounting an element set on a support substrate. The element set includes an element substrate and a plurality of light emitting elements on the element substrate. Each of the light emitting elements includes a semiconductor layered body having a surface and a pair of electrodes formed on the semiconductor layered body surface. A light reflecting member is provided between the element set and the support substrate. The element substrate is removed from the plurality of light emitting elements.

Abstract: A method of manufacturing a covering member includes: providing a first light-reflective member comprising a through-hole, the through-hole having first and second openings; arranging a light-transmissive resin containing a wavelength-conversion material within the through-hole; distributing the wavelength-conversion material predominantly on a side of the first opening of the through-hole within the light-transmissive resin; and after the step of distributing the wavelength-conversion material, removing a portion of the light-transmissive resin from a side of the second opening of the through-hole.

Abstract: The application relates to radars, and provides a chip with a beamforming network based on a photonic crystal resonant cavity tree structure and a fabrication method thereof. The chip includes a beamforming network layer, including an incidence coupling grating, first to Nth photonic crystal resonant cavity combinations, first to (N+1)th optical waveguides and an emergence coupling grating which are successively connected; branches of each photonic crystal resonant cavity combination is an integral multiple of that of the previous photonic crystal resonant cavity combination, and two photonic crystal resonant cavity combinations are connected by an optical waveguide.

Abstract: An LED module is disclosed. The LED module includes: a mount substrate including electrodes; an LED chip including a semiconductor stacked structure, a passivation layer covering the outer surface of the semiconductor stacked structure, and electrode pads connected to the outer surface of the semiconductor stacked structure through openings formed in the passivation layer; and solder bumps connecting the electrode pads to the corresponding electrodes and formed using a solder material represented by Sn-M (where M is a metal).

Abstract: An organic electroluminescent element according to one embodiment of the disclosure includes, in order, an anode, an organic light-emitting layer, an electron transport layer, an intermediate layer, and a cathode. The electron transport layer includes a sodium fluoride layer. The intermediate layer includes an ytterbium layer. The ytterbium layer is in contact with the sodium fluoride layer on side of the cathode.

Abstract: A light source package structure is provided. The light source package structure includes a substrate, an upper electrode layer and a lower electrode layer respectively disposed on two sides of the substrate, a light emitting unit mounted on the upper electrode layer, a surrounding wall disposed on the substrate and arranged to surround the light emitting unit, a conductive unit disposed on the surrounding wall and electrically connected to the lower electrode layer, a light permeable element disposed on the surrounding wall, a detection circuit formed on the light permeable element, and at least one conductive adhesive. The conductive adhesive includes a colloid and a plurality of fillers mixed with the colloid. The colloid and the fillers of the conductive adhesive are partially filled within the gap.

Abstract: A manufacturing method of a light emitting diode apparatus is provided. This method includes forming a light emitting diode on the substrate, forming a light leakage preventing layer to surround the side surface of the light emitting diode, etching a region corresponding to the light emitting diode in the substrate, and bonding a wavelength converting material to a lower portion of the light emitting diode in the etched region, in which the wavelength converting material includes a semiconductor layer including a quantum well layer.

Abstract: The present invention teaches a direct-lit backlight module and a related manufacturing method. The direct-lit backlight module includes a driver substrate, a reflection layer on the driver substrate, multiple mini-LEDs arranged in an array on the reflection layer, multiple reflection bumps on the reflection layer among the mini-LEDs, and an optical film set on the reflection layer, the mini-LEDs, and the reflection bumps. The mini-LEDs are electrically connected to the driver substrate. The reflection bumps jointly form a mesh dot structure. When light passes through the mesh dot structure, the light is scattered by the mesh dot structure to various directions, thereby enhancing the lighting efficiency of the direct-lit backlight module.

Abstract: Lighting devices for vehicles, e.g., headlamps or tail lamps, are provided. A refractive diffuser (50) allows the provision of substantially any lighting signature for the lighting device, yielding great freedoms in terms of design.

Abstract: A light emitting device disclosed in the embodiment includes: a body including a recess having an open upper portion; a plurality of electrodes disposed at a bottom of the recess; and a light emitting diode disposed on at least one of the plurality of electrodes, wherein a side surface of the recess is inclined at a first angle with respect to an optical axis of the light emitting diode, and a value obtained by multiplying a value of a minimum distance between the light emitting diode and the side surface of the recess by a tangent value for the first angle ranges from 0.21 to 0.42.

Abstract: A flip-chip light-emitting module includes a main circuit board, a heat dissipation substrate, a package assembly, and a light-emitting chip. The package assembly includes a frame surrounding the heat dissipation substrate and a lens unit disposed in the frame. The frame includes a first conductive path and at least two second conductive paths separated from each other, and the first conductive path and the second conductive paths are electrically connected to the main circuit board. The light-emitting chip is disposed on a heat dissipation substrate including a top conductive contact and a light-emitting surface on the same side of the light-emitting chip. The top conductive contact is electrically connected to the first conductive path through a conductor. The lens unit is provided with at least one light-transmitting conductive layer electrically connected to the at least two second conductive paths.

Abstract: A light-emitting device is provided. The light-emitting device includes a light-emitting element having a peak light-emitting wavelength in the range of 440 nm to 470 nm, and a fluorescent member. The fluorescent member includes a first fluorescent material having a peak light-emitting wavelength in the range of 480 nm to less than 520 nm, a second fluorescent material having a peak light-emitting wavelength in the range of 520 nm to less than 600 nm, and a third fluorescent material having a peak light-emitting wavelength in the range of 600 nm to 670 nm. The light-emitting device has a ratio of an effective radiant intensity for melatonin secretion suppression to an effective radiant intensity for blue-light retinal damage of 1.53 to 1.70 when the light-emitting device emits light with a correlated color temperature of 2700 K to less than 3500 K; 1.40 to 1.70 when the light-emitting device emits light with a correlated color temperature of 3500 K to less than 4500 K; 1.40 to 1.

Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer including a recessed region and a protruding region, an active layer and a second conductivity-type semiconductor layer on the protruding region, a reflective electrode layer disposed on the second conductivity-type semiconductor layer, an insulating layer including a first opening disposed on a contact region of the first conductivity-type semiconductor layer and a second opening disposed on a contact region of the reflective electrode layer, a first conductive pattern disposed on the insulating layer, and extending into the first opening to be electrically connected to the contact region of the first conductivity-type semiconductor layer, a second conductive pattern disposed on the insulating layer, and extending into the second opening to be electrically connected to the reflective electrode layer, and a multilayer insulating structure covering the first and second conductive patterns.

Abstract: A LED carrier includes a substrate, a conductive layer, an adhesive layer, and a reflector. The conductive layer is disposed on the substrate, and has a bonding portion and an extending portion. The bonding portion has a top surface higher than a top surface of the extending portion. The adhesive layer covers the extending portion of the conductive layer and exposes the bonding portion of the conductive layer. The reflector is disposed over the adhesive layer. The adhesive layer has a hook portion in contact with a corner of the reflector.

Abstract: An infrared emitting fluoride phosphor and an infrared light emitting device are provided. The infrared emitting fluoride phosphor includes an activation center of Cr3+. The infrared light emitting device includes a light source and the infrared emitting fluoride phosphor. The light source is disposed to emit a first light, and the first light has a wavelength of 400-700 nm. The infrared emitting fluoride phosphor is configured to be excited by the first light to emit a first infrared ray. The first infrared ray has a wavelength of 650-1000 nm. The infrared light emitting device has a broad emission wavelength, such that it can be applied in variety of sensing device.

Abstract: The semiconductor light emitting element is a semiconductor light emitting element comprising a semiconductor layer including a light emitting layer, wherein a surface of the semiconductor light emitting element includes a light extraction surface. At least one of the light extraction surface and an interface between two layers having different refractive indexes in the semiconductor light emitting element is provided with a periodic recessed and projecting structure having a period that exceeds 0.5 times as great as a wavelength of light emitted from the light emitting layer, and a minute recessed and projecting structure located on a surface of the periodic recessed and projecting structure and having an average diameter that is not more than 0.5 times as great as the wavelength of the light.

Abstract: Disclosed herein is a multiple light emitter device which inactivates microorganisms. The device includes at least two light emitters and at least one light-converting material arranged to convert at least a portion of light from the light emitters. Any unconverted light emitted from the light emitters and converted light emitted from the at least one light-converting material mixes to form a combined light, the combined light being white. In one aspect, the light emitters include at least one blue light emitter and at least one violet light emitter. In another aspect, the light emitters include one blue light emitter and one emitter within the range of approximately yellow to infra-red light.

Abstract: In an ultraviolet LED chip, an epitaxial structure can be isolated into two insulated structures, i.e. a first and a second epitaxial structures by growing the epitaxial structure on a surface of a substrate, and arranging an insulating layer and a groove contacting layer in the middle of the epitaxial structure. The N-type AlGaN layer is stretched out through the groove contacting layer. In the ultraviolet LED chip, through the cooperation among the N electrode, P electrode and intermediate electrode on the base plate along with the first and second epitaxial structures, an LED and an ESD are formed respectively. The ESD is connect to the ends of LED in anti-parallel for providing an electrostatic discharging channel, so as to reduce the direct damage of the ultraviolet LED chip caused by electrostatic discharging, and increase a forward voltage of the LED and the antistatic intensity.

Abstract: A method of manufacturing a display apparatus includes separating a mother substrate that includes a plurality of connected unit display apparatuses into a plurality of separated unit display apparatuses. Each separated unit display apparatus includes a display panel and at least one supporting unit attached below the display panel. The display panel includes a display substrate that has a pad area on which are disposed a plurality of pads and a thin film encapsulation layer on the display substrate. The method further includes consecutively cutting the display panel and the at least one supporting unit of each separated unit display apparatus along cutting lines in the pad area, where a first cut surface of the pad area of the display substrate and a second cut surface of the at least one supporting unit are respectively cut at different angles.

Abstract: A method of manufacturing a display device includes providing a display substrate divided into a plurality of emission regions, and a non-emission region adjacent the emission regions; forming a black matrix on the display substrate, the black matrix corresponding to the non-emission region; and forming a plurality of color patterns on the display substrate through a solution process, the plurality of color patterns corresponding to the emission regions.

Abstract: A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.

Abstract: A phosphor plate includes: a plate substrate, a reflection coating provided on a surface of the plate substrate, a reflecting layer provided on the reflection coating, and composed of metallic oxide and transparent binder, and a phosphor layer provided on the reflecting layer. The reflecting layer has a thickness ranging from 10 ?m to 90 ?m inclusive, and the metallic oxide is contained in the reflecting layer at a volume density ranging from 15 vol % to 40 vol %.