Abstract: Disclosed herein are inorganic dies with organic interconnect layers and related structures, devices, and methods. In some embodiments, an integrated circuit (IC) structure may include an inorganic die and one or more organic interconnect layers on the inorganic die, wherein the organic interconnect layers include an organic dielectric.

Abstract: A light-emitting diode package component is provided. The light-emitting diode package component includes a substrate, a light-emitting chip, a die attach adhesive, a reflective structure, and a molding layer. The light-emitting chip is disposed on the substrate for generating an initial light beam with an initial wavelength. The die attach adhesive is disposed between the light-emitting chip and the substrate so that the light-emitting chip is mounted on the substrate. The reflective structure defining an accommodating space is disposed on the substrate and surrounds the light-emitting chip. The molding layer is disposed in the accommodating space and covers the light-emitting chip. The die attach adhesive includes a first wavelength conversion material, a portion of the initial light beam entering into the die attach adhesive excites the first wavelength conversion material to produce an excitation light with a first wavelength that is greater than the initial wavelength.

Abstract: An organic light-emitting display device includes: a substrate; a pixel electrode on the substrate; a pixel defining layer having a first opening exposing a center portion of the pixel electrode; a barrier layer on the pixel defining layer; an intermediate layer including a first common layer, a first emissive layer, and a second common layer sequentially arranged on the pixel electrode, the pixel defining layer, and the barrier layer; and a first opposite electrode covering the intermediate layer. The barrier layer has a second opening that is larger than the first opening and has an undercut structure.

Abstract: A sealing structure of light strip includes a light strip glue dispensing plate covered with pouring glue for packaging, and two glue blocking structures respectively arranged on two sides of the pouring glue in an extending direction on the light strip glue dispensing plate. The edge overflow of the pouring glue during glue dispensing can be prevented.

Abstract: A light emitting device includes an LED having a light emitting top surface and sidewalls. A phosphor structure is attached to the light emitting surface of the LED. The phosphor structure has a light emitting top surface facing away from the LED light emitting surface, and sidewalls. A light reflective material is arranged to cover the sidewalls of the LED and the phosphor structure. A light absorptive region is defined in the light reflective material around a perimeter of the light emitting surface of the phosphor structure. The light absorptive region may be spaced apart from the perimeter of the phosphor structure by a gap. The light absorptive region may be formed by ultraviolet laser illumination of the light reflecting material.

Abstract: An optical device of the present disclosure includes an optical element and an aberration correction element configured to correct aberration caused by the optical element. The aberration correction element includes a plurality of columnar structures made of a dielectric material. The plurality of columnar structures have a refractive index and a pitch such that a waveguide effect with respect to incident light is produced, and a diameter of a first columnar structure and a diameter of a second columnar structure among the plurality of columnar structures differ from each other.

Abstract: A light-emitting element, includes a substrate; and a semiconductor stack formed on the substrate, including: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type; and a light-emitting stack formed between the first and second semiconductor layers; wherein in a cross-sectional view, an inner region of the first semiconductor layer includes a first region with a first thickness, and an edge of the first semiconductor layer includes a second region with a second thickness larger than the first thickness.

Abstract: A light-emitting device includes: a semiconductor stacked body including: an n-type semiconductor layer having a light extraction surface and an n-side contact surface, the n-side contact surface being located on a side opposite the light extraction surface, a light-emitting layer located at a region of the n-type semiconductor layer other than the n-side contact surface, and a p-type semiconductor layer located on the light-emitting layer, wherein the p-type semiconductor layer surrounds the n-side contact surface in a top view; a first insulating film located at a region including a central portion of the n-side contact surface; an n-side electrode including an n-contact portion located at the n-side contact surface at a periphery of the first insulating film, the n-contact portion contacting the n-side contact surface; and a p-side electrode located on the p-type semiconductor layer and contacting the p-type semiconductor layer.

Abstract: LED devices emitting white light comprise a blue-emitting LED, green-emitting quantum dots (QDs) and red-emitting K2SiF6:Mn4+ (KSF) phosphor. A backlight unit (BLU) for a liquid crystal display (LCD) comprises one or more blue-emitting LEDs and a polymer film containing green-emitting QDs and KSF phosphor. The QDs and/or KSF phosphor may be encapsulated in beads that provide protection from oxygen and/or moisture.

Abstract: A nano-structure layer is disclosed. The nano-structure layer includes a plurality of nano-photonic structures that are configured in a first configuration such that light incident upon the nano-structured layer below a cutoff angle passes through the nano-structured layer and light incident upon the nano-structured layer above the cutoff angle is reflected back in direction of the incidence.

Abstract: A pixel driving system for AMOLED display device and driving method are disclosed. The pixel driving system for AMOLED display device includes a sub-pixel driving circuit and a node voltage generating module electrically connected to the sub-pixel driving circuit. Wherein the node voltage generating module is inputted with the a red-green-blue display data for processing the red-green-blue display data, obtaining an APL value of a current frame of the AMOLED display device, and according to the APL value and a preset node voltage calculation formula, the node voltage generating module generates a corresponding node voltage and outputting to the source of the driving thin-film transistor. Adjusting the gate-to-source voltage of the driving thin-film transistor by using the APL value, thereby adjusting the driving current flowing through the light-emitting diode to adjust the entire display brightness of the AMOLED display device.

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: A vehicle lighting device according to an embodiment includes: a socket; a substrate that is provided on one end portion side of the socket; a frame portion that is provided on the substrate; at least one light-emitting element that is provided in a region on an inner side of the frame portion on the substrate; a sealing portion that is provided on an inner side of the frame portion and covers the light-emitting element; and an optical element that is provided on the sealing portion. An arithmetic-average roughness value of a first surface on the sealing portion side in the optical element is greater than an arithmetic-average roughness value of a second surface of the optical element on a side opposite to the first surface.

Abstract: A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

Abstract: A light-emitting diode (LED) chip with reflective layers having high reflectivity. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer.

Abstract: A probe includes a pedestal and at least one feature extending from the pedestal to engage a surface of a corresponding contact at a position offset from a central longitudinal axis of the contact. The pedestal includes a cavity and the feature can include one or more blades that extend from a periphery of the cavity to a central longitudinal axis of the pedestal. The three blades are configured to engage the surface of the contact. The three blades can be positioned within the cavity to provide a 120-degree rotational symmetry about the central longitudinal axis of the pedestal.

Abstract: A wavelength converter includes a base, a wavelength converting component that converts a wavelength of at least part of excitation light to emit converted light, and an optical filter disposed between the base and the wavelength converting component. The optical filter transmits or absorbs, out of the converted light including a wavelength range of from approximately 470 nm to approximately 750 nm, converted light of a predetermined wavelength included in the wavelength range.

Abstract: A system, method and device for use as a reflector for a light emitting diode (LED) are disclosed. The system, method and device include a first layer designed to reflect transverse-electric (TE) radiation emitted by the LED, a second layer designed to block transverse-magnetic (TM) radiation emitted from the LED, and a plurality of ITO layers designed to operate as a transparent conducting oxide layer. The first layer may be a one-dimension (1D) distributed Bragg reflective (DBR) layer. The second layer may be a two-dimension (2D) photonic crystal (PhC), a three-dimension (3D) PhC, and/or a hyperbolic metamaterial (HMM). The 2D PhC may include horizontal cylinder bars, vertical cylinder bars, or both. The system, method and device may include a bottom metal reflector that may be Ag free and may act as a bonding layer.

Abstract: A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, and first and second external connection parts. The first semiconductor layer is exposed from the light emitting layer and the second semiconductor layer at exposed portions arranged in columns each extending in a first direction. The insulating film defines openings respectively located above the exposed portions. The first electrode is connected to the first semiconductor layer through the openings and covers a part of the second semiconductor layer via the insulating film. The first external connection part is connected to the first electrode and spaced apart from the exposed portions in the plan view. The first external connection part has a shape elongated in the first direction between adjacent ones of the columns of the exposed portions. The second external connection part is connected to the second semiconductor layer via the second electrode.

Abstract: Provided is a light emitting diode. The light emitting diode includes a substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a conductor passing through the second semiconductor layer and the active layer to contact the first semiconductor layer.

Abstract: A headlight for a vehicle includes a light source. The light source includes: a substrate; a light emitting diode chip; and a phosphor. The phosphor through which light exiting from a light emitting surface penetrates. The phosphor includes an exiting surface through which the light from the light emitting surface penetrates and exits. A first direction of the exiting surface corresponds to a height direction of a light distribution pattern by the light exiting from the exiting surface, and a second direction of the exiting surface corresponds to a spread in a lateral direction of the light distribution pattern. A dimension in the first direction of the exiting surface is smaller than a dimension in the second direction of the exiting surface.

Abstract: According to at least one aspect, a lighting device is provided. The lighting device comprises a circuit board, a light emitting diode (LED) mounted to the circuit board and configured to emit light, a lens disposed over the LED having a bottom surface facing the circuit board, a top surface opposite the bottom surface, and a lateral surface between the top and bottom surfaces, and an elastomer encapsulating at least part of the circuit board. The elastomer may not be in contact with at least part of the lateral surface of the lens so as to form a gap between the elastomer and the lateral surface of the lens.

Abstract: The present disclosure relates to a phosphor ceramic comprising a plurality of luminescence conversion materials, wherein a luminescence conversion material serves as a matrix material for the others.

Abstract: A light source includes an optical emitter configured to emit light toward an output aperture of the light source. The light source further includes a partially reflective layer at the output aperture. The partially reflective layer is configured to receive the emitted light from the optical emitter and to reflect a portion of the received light as reflected light. The light source additionally includes a scattering medium located between the partially reflective layer and the optical emitter. The scattering medium is configured to scatter the reflected light as scattered light having a different direction from the reflected light. A portion of the scattered light is redirected toward the partially reflective layer as recycled light to be emitted from the light source. A multiview backlight that employs the light source is also provided, along with a method for operating the light source.

Abstract: A method of producing a light emitting device includes: providing a fluorescent material; dividing a plurality of laser elements into a shorter-wavelength group and a longer-wavelength group so that lights emitted from the laser elements in the shorter-wavelength group have peak wavelengths shorter than an excitation peak wavelength of the fluorescent material and lights emitted from the laser elements in the longer-wavelength group have peak wavelengths longer than the excitation peak wavelength of the fluorescent material; and selecting one or more of the laser elements from each of the shorter-wavelength group and the longer-wavelength group in combination with the fluorescent material to produce a light emitting device.

Abstract: A light emitting device including a molded package having leads including a pair of a first lead and a second lead, a molded resin, and a recess, where an upper surface of the leads is partially exposed from a bottom surface of the recess. The device further including a light emitting component mounted on the bottom surface, and at least one sealing member located in the recess to cover the light emitting component. At least one of the first lead and the second lead has a groove on an upper surface thereof, where the groove is positioned so as to correspond to a corner on the bottom surface of the recess in a cross sectional view. A portion of the molded resin located within the groove is exposed from the bottom surface. A surface of the corner is composed of a curved surface, and the sealing member covers the corner.

Abstract: Article comprising particles in an organic polymer matrix comprising a cured thiol-alkene resin having a Tg>20° C., wherein the particles comprise a composite core and a continuous nonmetallic inorganic coating covering the composite core, wherein the composite core comprises a nonmetallic inorganic matrix, ligands, and quantum dots, wherein the nonmetallic inorganic matrix is present in the composite core in an amount of up to 40 volume percent, and wherein the coating has an average thickness up to 5 micrometers. Exemplary articles described herein can be made for use in display applications such as films, LED caps, LED coatings, LED lenses, and light guides. Exemplary articles described herein can be made for use in nondisplay applications such as security applications where quantum dot phosphors are used to provide fluorescence at selected or tailored wavelengths. In such uses, the organic polymer matrix could be a label or a coating on a label, or other articles such as a card or tag.

Abstract: Article comprising composite particles in an organic polymer matrix comprising a cured thiol-alkene resin having a Tg>20° C., the composite particles comprising a hydrophobic nonmetallic inorganic matrix, ligands, and quantum dots, wherein the hydrophobic nonmetallic inorganic matrix is present in the composite particles in an amount of up to 40 volume percent. Exemplary articles described herein can be made for use for display applications such as films, LED caps, LED coatings, LED lenses, and light guides. Exemplary articles described herein can be made for use for non-display applications such as security applications where quantum dot phosphors are used to provide fluorescence at selected or tailored wavelengths. In such uses, the organic polymer matrix could be a label or a coating on a label, or other articles such as a card or tag.

Abstract: The disclosure provides a LED device, a backlight module and a display device. The LED device includes: a bracket structure and a chip, the bracket structure having a cup cavity and the chip being mounted in the cup cavity; a packaging structure, the packaging structure being provided on the bracket structure in a covering manner to seal the cup cavity and an upper surface, far away from the cup cavity, of the packaging structure forming an emergent surface; and a reflective shielding layer, the reflective shielding layer being provided on the packaging structure and the reflective shielding layer being at a central position of the emergent surface and covering part of the emergent surface. According to the disclosure, the problem in the related art that it is impossible to consider both a good color saturation and brightness contrast of a display of a display device is solved.

Abstract: LED structures (e.g., LED arrays) and fabrication methods can reduce or even eliminate deep etching, and associated defect formation, proximate sites of individual LEDs. Such approaches can achieve desired electrical isolation without deep etching, provide a high conductivity current spreading layer, and, or reduce losses otherwise associated with conventional fabrication approaches. Some implementations advantageously lift off or separate an insulating substrate from a wafer to expose a bottom surface of the epitaxial LED layer and forms a backside contact (e.g., ground plane) overlying the bottom surface. Other implementations isolate deep etching away from sensitive regions and locate the backside contact on a top surface of the epitaxial LED layer. Some implementations form light extraction features (e.g., photonic crystals) on the exposed bottom surface. The top surface of the epitaxial LED layer may be undoped to improve electrical isolation.

Abstract: The present technology relates to a semiconductor device, a manufacturing method, and a solid-state imaging device which are capable of suppressing a decrease in bonding strength and preventing a poor electrical connection or peeling when two substrates are bonded to each other. Provided is a semiconductor device, including: a first substrate including a first electrode including a metal; and a second substrate bonded to the first substrate and including a second electrode including a metal. An acute-angled concavo-convex portion is formed on a side surface of a groove in which the first electrode is formed and a side surface of a groove in which the second electrode metal-bonded to the first electrode is formed. The present technology can be, for example, applied to a solid-state imaging device such as a CMOS image sensor.

Abstract: A display device with improved viewing angle characteristics is provided. A display device with suppressed mixture of colors between adjacent pixels is provided. The display device includes a first coloring layer, a second coloring layer, and a structure body therebetween. The structure body has a portion closer to a display surface side than a bottom surface of the first coloring layer or a bottom surface of the second coloring layer.

Abstract: A light emitting device includes: a light emitting element; and a light transmissive member bonded to an emission surface of the light emitting element; wherein the light emitting element and the light transmissive member are bonded via a bonding portion that comprises a portion of the light emitting element and a portion of the light transmissive member; wherein the bonding portion contains at least one rare gas element selected from the group consisting of He, Ne, Ar, and Kr; and wherein a peak of a rare gas element distribution is positioned away from the emission surface in at least one of the light emitting element and the light transmissive member.

Abstract: A light emitting device includes a light emitting element having a peak emission wavelength of 410 nm to 440 nm and a phosphor member. The phosphor member includes a first phosphor having a peak emission wavelength of 430 nm to 500 nm and containing an alkaline-earth phosphate, a second phosphor having a peak emission wavelength of 440 nm to 550 nm and containing at least one of an alkaline-earth aluminate and a silicate containing Ca, Mg, and Cl, a third phosphor having a peak emission wavelength of 500 nm to 600 nm and containing a rare-earth aluminate, a fourth phosphor having a peak emission wavelength of 610 nm to 650 nm and containing a silicon nitride containing Al and at least one of Sr and Ca, and a fifth phosphor having a peak emission wavelength of 650 nm to 670 nm and containing a fluorogermanate.

Abstract: Disclosed is a method for optimizing a quantum circuit of an ordered series of quantum gates, applied to an initial layout of qubit values, consisting in inserting a set of local SWAP gates so that all gates of the circuit are local, the method including: for each gate, if it is not local, inserting a set of local SWAP gates; determining the set of permutations, each consisting of a succession of swaps of qubit values along shortest paths between positions of qubits associated with the gate; and choosing, from the permutations, a permutation that minimizes a cost representing the number of swaps necessary to make the gates of a sequence within the series, of substantially smaller size, local; re-establishing the initial layout by establishing a tree covering a graph representative of the layout of the qubits of the circuit, and by swapping qubit values along paths of the tree.

Abstract: A lighting device (1) is disclosed, comprising a carrier substrate (4) and a heat-transferring element (5). The carrier substrate (4) includes at least a first region (6) and a second region (8). The first region (6) comprises a light-emitting module (7). The second region (8) comprises a communication module (9), which is configured for wireless communication. The heat-transferring element (5) connected with the carrier substrate (4). The carrier substrate (4) partly overlies the heat-transferring element (5) such that at least a part or portion of the first region (6) of the carrier substrate (4) overlies the heat-transferring element (5) and at least a part or portion of the second region (8) of the carrier substrate (4) does not overlie the heat-transferring element (5).

Abstract: A laminated structure is provided. The laminated structure includes a light-emitting layer including a light emitting diode. The laminated structure also includes a first layer including a first thin film transistor circuit. The laminated structure further includes a second layer including a second thin film transistor circuit. The second layer is located between the light-emitting layer and the first layer. The second thin film transistor circuit includes a channel region. The light emitting diode is at least partially overlapped with the first thin film transistor circuit and not overlapped with the channel region of the second thin film transistor circuit in a top view direction of the laminated structure.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed.

Abstract: A backlight device includes an LED substrate including LED devices arrayed and a quantum dot layer disposed to receive light output from the LED devices. Each LED device emits first blue light and at least one of first green light and first red light, and when relative radiance of the first blue light is 1.00, relative radiance of the first green light is 0.21 or less and relative radiance of the first red light is 0.48 or less. The quantum dot layer includes, in accordance with the at least one of the first green light and the first red light, at least one of a green quantum dot excited by the first blue light and emitting second green light and a red green quantum dot excited by the first blue light and emitting second red light, and the quantum dot layer contains 300 ppm or less of cadmium.

Abstract: An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.

Abstract: A method of manufacturing a light-emitting device includes steps of: preparing at least one first member each including (i) a light-transmissive member having a top surface, a bottom surface, and a lateral surface contiguous with the top surface and the bottom surface, (ii) a phosphor layer disposed below the bottom surface, and (iii) a cover layer disposed on a lateral surface of the phosphor layer and the lateral surface of the light-transmissive member; and, for each of the at least one first member, mounting a light-emitting element on a base having a fat plate shape, bonding the light-emitting element and the phosphor layer of the first member together, placing a frame body on the base so as to surround the light-emitting element, and filling a light-reflective member in the frame body so that the light-reflective member covers at least a portion of the cover layer of the first member.

Abstract: A pixel defining layer, a display substrate and manufacturing method thereof, and a display apparatus are provided. The pixel defining layer includes: a lyophilic material layer disposed on a base substrate, and a lyophobic material layer disposed at a side of the lyophilic material layer away from the base substrate. An orthographic projection of a surface of the lyophobic material layer close to the base substrate on the base substrate is within an orthographic projection of a surface of the lyophilic material layer away from the base substrate on the base substrate. The lyophilic material layer is made of a lyophilic material having attractability to a solution with organic electroluminescent materials dissolved, and the lyophobic material layer is made of a lyophobic material having repellency to the solution with organic electroluminescent materials dissolved. The pixel defining layer reduces the influence on the uniformity of the films.

Abstract: A backlight for a display screen, an electronic device and a method of operating a backlight are described. A backlight includes a light guide, a lead frame, and at least one visible light-emitting diode (LED) and at least one infrared (IR) LED on the lead frame. The backlight includes at least one light entry face and a light exit face. The lead frame includes a first lead and a second lead isolated from each other. The at least one visible LED is optically coupled to one of the at least one light entry face and includes a counter electrode contacted by the first lead and an electrode contacted by the second lead. The at least one IR LED is optically coupled to one of the at least one entry face and includes a counter electrode contacted by the second lead and an electrode contacted by the first lead.

Abstract: Substrate based light emitter devices, components, and related methods are disclosed. In some aspects, light emitter components can include a substrate and a plurality of light emitter devices provided over the substrate. Each device can include a surface mount device (SMD) adapted to mount over an external substrate or heat sink. In some aspects, each device of the plurality of devices can include at least one LED chip electrically connected to one or more traces and at least one pair of bottom contacts adapted to mount over a surface of external substrate. The component can further include a continuous layer of encapsulant disposed over each device of the plurality of devices. Multiple devices can be singulated from the component.

Abstract: Provided is a display device including: a substrate; a plurality of display elements defining a display area on the substrate and each including a pixel electrode, an opposite electrode, and an intermediate layer between the pixel electrode and the opposite electrode; a power supply wiring disposed outside the display area; an organic insulating layer on the power supply wiring and having an opening exposing the power supply wiring; a power supply electrode layer partially disposed on the organic insulating layer and including a plurality of holes over the organic insulating layer, wherein a first portion of the power supply electrode layer overlaps the power supply wiring and a second portion of the power supply electrode layer overlaps the opposite electrode; a plurality of protrusions spaced apart from each other and respectively covering at least some of the plurality of holes; and an encapsulation layer covering the plurality of display elements.

Abstract: A substantial amount of the light emitting surface area of a wavelength conversion element above a light emitting element is covered by a reflective thermal conductive element. The light that is reflected by this reflective element is ‘recycled’ within the light emitting structure and exits the structure through the smaller area that is not covered by the reflective element. Because the thermal conductive element does not need to be transparent, a relatively thick metal layer may be used; and, because the thermal conductive element covers a substantial area of the wavelength conversion element, the thermal efficiency of this arrangement is very high. The reflective thermal conductive element may be coupled to thermal conductive pillars, which may be mounted on a thermal conductive submount.

Abstract: A light source that includes an LED light source, and one or more encapsulants containing a light-absorbing component that absorbs light in the wavelength range of about 415 nm to about 435 nm and can include at least one phosphor that can provide an LED light source that emits white light having a reduced amount of blue light or even toxic blue light with minimal effect on color characteristics such as correlated color temperature (CCT), color gamut, and luminance.

Abstract: Embodiments of the invention include a plurality of light emitting devices, each light emitting device having a top surface, a bottom surface opposite the top surface, and at least one side surface connecting the top surface and the bottom surface. A wavelength converting layer is disposed in direct contact with the top surface and one side surface of each of the plurality of light emitting devices to mechanically connect each of the plurality of light emitting devices together. The wavelength converting layer is made up of a wavelength converting material, an adhesive material, and a transparent material that has a thermal conductivity of at least 0.2 W/mK. The adhesive material and the transparent material have indices of refraction that vary less than ten percent.

Abstract: Structures and associated methods for making smaller physical feature sizes for masks used in imprint lithography for application to patterning for advanced semiconductor and data storage devices.