Abstract: A light emitting device includes a wiring substrate including an n-electrode and a p-electrode wired on a surface of the substrate, a light emitting element including an n-pad electrode joined directly to the n-electrode and a p-pad electrode joined directly to the p-electrode, a first gap between the n-electrode and the p-electrode, with the light emitting element being installed across that first gap, and an underfill, which fills a space between the wiring substrate and the light emitting element. At least one of the n-pad electrode and the p-pad electrode is divided into two islands with a linear shape second gap therebetween. The second gap is continuous with a linear shape third gap between the n-pad electrode and the p-pad electrode.

Abstract: A method of manufacturing a light emitting device includes: bonding a plurality of light emitting elements each having an outer peripheral lateral surface onto a light-transmissive substrate; forming at least one groove on the light-transmissive substrate to surround an outer periphery of each of the plurality of light emitting elements; disposing at least one light guiding member in the groove to continuously cover the groove and the outer peripheral lateral surfaces of adjacent ones of the plurality of light emitting elements; and singulating the light-transmissive substrate at a position between adjacent ones of the plurality of light emitting elements, to obtain a plurality of light emitting devices in each of which at least one of the light emitting elements is bonded to a single light-transmissive member.

Abstract: A semiconductor laser device includes a semiconductor laser element, a sub mount member, a mount section having an upper surface on which the semiconductor laser element is mounted with the sub mount member interposed therebetween, a lead pin disposed at left and right sides of the mount section, a retainer that retains the mount section and the lead pin together and that is composed of an insulative material, and a protrusion protruding toward the left and right sides of the mount section. A lower surface of the mount section is parallel to an upper surface of the mount section and protrudes from a lower surface of the retainer.

Abstract: A light-emitting component is provided which comprises a carrier, a reflective layer and a light source, wherein the light source is mechanically fixed on a mounting surface of the carrier. The carrier has an electrically isolating basic body comprising an edge region, said edge region bounding the mounting surface. The edge region comprises a recess, wherein the reflective layer covers a base surface of the recess. Moreover, the mounting surface is vertically elevated with respect to the base surface of the recess at least in places, such that the reflective layer is kept away from the mounting surface. Furthermore, a method for producing such a light-emitting component is provided.

Abstract: A light emitting device includes a light emitting element, a light-transmissive member, a covering member, and a base member. The light-transmissive member has a flange on a lateral surface thereof in such a manner as to continue from a periphery of an upper surface to a periphery of a lower surface of the light-transmissive member and to be positioned outside the upper surface of the light-transmissive member and an upper surface of the light emitting element in plan view. The flange has a thin portion at an inner side than the outer edge side of the flange. The thin portion has a thickness smaller than a thickness of the outer edge side of the flange.

Abstract: An optical module for protecting human eyes includes a first support element, first conductive paths, a lens, at least one second conductive path, and a light-emitting element. The first support element has a bottom plate and a sidewall on the bottom plate. The first conductive paths are in the first support element or outside the first support element. Each of the first conductive paths has a first end adjacent to a top surface of the sidewall and a second end adjacent to the bottom plate. The lens is located on the top surface of the sidewall. The second conductive path is electrically connected to the first ends of the first conductive paths. The light-emitting element is located on the bottom plate of the first support element. When a resistance difference is detected through the first and second conductive paths, the light-emitting element is switched off.

Abstract: An LED module includes a substrate having a high thermal conductivity and at least one LED die mounted on the substrate. A wavelength conversion material, such as phosphor or quantum dots in a binder, has a very low thermal conductivity and is formed to have a relatively high volume and low concentration over the LED die so that the phosphor or quantum dots conduct little heat from the LED die. A transparent top plate, having a high thermal conductivity, is positioned over the wavelength conversion material, and a hermetic seal is formed between the top plate and the substrate surrounding the wavelength conversion material. The LED die is located in a cavity in either the substrate or the top plate. In this way, the temperature of the wavelength conversion material is kept well below the temperature of the LED die. The sealing is done in a wafer level process.

Abstract: A semiconductor device includes a lead, a semiconductor element, a first resin molded body, and a second resin molded body. The lead is a thin metal plate having a first surface and a second surface on an opposite side from the first surface. The semiconductor element is fixed to the lead. The first resin molded body is arranged on the first surface of the lead. An outer shape of the first resin molded body is left and right symmetric with respect to a center axis passing through a center of the first resin molded body in a plan view. The second resin molded body is arranged on the second surface of the lead. An outer shape of the second resin molded body is left and right asymmetric with respect to a center axis passing through a center of the second resin molded body in the plan view.

Abstract: The method of dicing a wiring substrate that includes a core substrate having a front surface and a rear surface at least one of which is provided with an adhesive layer and a rim pattern thereon. The adhesive layer is provided with a laminate that has wiring layers and insulating layers, laminating. The rim pattern is provided with the insulating layers laminated thereon. The method includes steps of forming separation grooves by removing portions of the insulating layers laminated on the rim pattern to expose the rim pattern; exposing at least one of the front and rear surfaces of the core substrate by dissolving and removing the rim pattern of the groove bottoms; and dicing the core substrate exposed at groove bottoms, along cutting margins each being smaller than a groove width of each of the groove bottoms.

Abstract: An LED filament includes LED chips, two conductive electrodes, light conversion coating, and attaching structure. The LED chips are electrically connected with one another. Each of the two conductive electrodes is electrically connected to a corresponding LED chip of the LED chips. The light conversion coating is coated on two sides of the LED chips and the two conductive electrodes. A portion of each of the two conductive electrodes is exposed from the light conversion coating. The light conversion coating includes a top layer and a base layer. The base layer coats on one side of the LED chips, and the top layer coats on another sides of the LED chips. The attaching structure is between the top layer and the base layer, between the base layer and the conductive electrodes, or between the top layer and the conductive electrodes.

Abstract: A package structure and an electronic device including the package structure are disclosed. The package structure includes a substrate, a wire layer disposed on the substrate, a visual unit disposed on the substrate, and an encapsulation element disposed on the substrate. The wire layer includes a plurality of patterned circuits. The visual unit includes a first area and a second area defined along a periphery of the first area. The first area is configured with a photoelectric element, and the photoelectric element is electrically connected to and disposed corresponding to at least one of the patterned circuits. The encapsulation element completely covers the first area of the visual unit and overlaps the corresponding patterned circuit, such that an average reflectance inside the encapsulation element is greater than an average reflectance outside the encapsulation element.

Abstract: Exemplary embodiments provide a semiconductor device including: a semiconductor structure which includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer, the active layer and a first portion of the first-conductive-type semiconductor layer; and a plurality of second recesses passing through the second-conductive-type semiconductor layer, the active layer and a second portion of the first-conductive-type semiconductor layer, wherein the first recess is disposed along an outer surface of the semiconductor structure, wherein the plurality of second recesses are surrounded by the first recess.

Abstract: A semiconductor device includes a substrate having a mounting surface, a plurality of internal terminals disposed on the mounting surface, a light-receiving element mounted on the mounting surface, a light-emitting element mounted on the mounting surface, a first bonding wire and a light-transmitting element. The light-receiving element has a light-receiving region that detects light and a plurality of element pad portions. At least one of the plurality of element pad portions is electrically connected to the light-receiving region. The light-emitting element is spaced apart from the light-receiving element along a first direction perpendicular to a thickness direction of the substrate. The first bonding wire connects one of the plurality of element pad portions of the light-receiving element to one of the plurality of internal terminals. The first bonding wire is located on a side of the light-receiving element opposite the light-emitting element along the first direction.

Abstract: A light emitting diode (LED) includes a n-doped semiconductor material layer located over a substrate, an active region including an optically active compound semiconductor layer stack configured to emit light located over the n-doped semiconductor material layer, a p-doped semiconductor material layer located over the active region and containing a nickel doped surface region, a conductive layer contacting the nickel doped surface region of the p-doped semiconductor material, and a device-side bonding pad layer electrically connected to the conductive layer.

Abstract: A wavelength conversion member is provided which includes a phosphor layer having an increased pencil hardness and thereby has a reduced risk of breakage such as scattering of fragments of the phosphor layer or separation of the phosphor layer. A substrate 12 is made of sapphire, and a phosphor layer 14 is disposed on the substrate 12 and includes phosphor particles 16 and a light transmissive inorganic material 22. The phosphor layer 14 has a pencil hardness of 5B or above. The high hardness of the phosphor layer 14 reduces the risk of breakage such as the phosphor layer 14 being scattered as fragments or being separated from the substrate 12.

Abstract: A light-emitting diode package component is provided. The light-emitting diode package component includes a substrate, a light-emitting chip, a die attach adhesive, a reflective structure, and a molding layer. The light-emitting chip is disposed on the substrate for generating an initial light beam with an initial wavelength. The die attach adhesive is disposed between the light-emitting chip and the substrate so that the light-emitting chip is mounted on the substrate. The reflective structure defining an accommodating space is disposed on the substrate and surrounds the light-emitting chip. The molding layer is disposed in the accommodating space and covers the light-emitting chip. The die attach adhesive includes a first wavelength conversion material, a portion of the initial light beam entering into the die attach adhesive excites the first wavelength conversion material to produce an excitation light with a first wavelength that is greater than the initial wavelength.

Abstract: A light emitting device comprises an LED emitting ultraviolet or blue light and one or more phosphors excited by the ultraviolet or blue light and in response emitting longer wavelength light to provide a combined phosphor emission spectrum having an emission peak at wavelength ?pk with a full width at half maximum of FWHM. With ?pk and FWHM expressed in nm, 525 nm??pk?0.039*FWHM+492.7 nm. The light emitting device may be used, for example, to signal the autonomous driving state of an automobile.

Abstract: An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. Attention is paid to Förster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Förster mechanism is achieved by making an emission wavelength of a molecule which donates energy overlap with a local maximum peak on the longest wavelength side of a graph obtained by multiplying an absorption spectrum of a molecule which receives energy by a wavelength raised to the fourth power.

Abstract: A process for preparing a population of coated phosphor particles is presented. The process includes combining particles of a phosphor of formula I: Ax [MFy]:Mn4+ with a first solution including a compound of formula II: Ax[MFy] to form a suspension, where A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is an absolute value of a charge of the [MFy] ion; and y is 5, 6 or 7. The process further includes combining a second solution including a source A+ ions with the suspension.

Abstract: A light emitting diode (LED) includes: a device substrate; a first semiconductor layer above the device substrate, and doped with an n-type dopant; a second semiconductor layer above the first semiconductor layer, and doped with a p-type dopant; an active layer between the first semiconductor layer and the second semiconductor layer and configured to provide light; a transparent electrode layer adjacent to an upper part of the second semiconductor layer; and a first electrode pad and a second electrode pad between the device substrate and the first semiconductor layer, the first electrode pad electronically connected with the first semiconductor layer and the second electrode pad electrically connected with the second semiconductor layer, wherein light provided by the active layer is irradiated to an outside in a direction from the active layer to the second semiconductor layer.

Abstract: A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

Abstract: Disclosed herein are inorganic dies with organic interconnect layers and related structures, devices, and methods. In some embodiments, an integrated circuit (IC) structure may include an inorganic die and one or more organic interconnect layers on the inorganic die, wherein the organic interconnect layers include an organic dielectric.

Abstract: An organic light-emitting display device includes: a substrate; a pixel electrode on the substrate; a pixel defining layer having a first opening exposing a center portion of the pixel electrode; a barrier layer on the pixel defining layer; an intermediate layer including a first common layer, a first emissive layer, and a second common layer sequentially arranged on the pixel electrode, the pixel defining layer, and the barrier layer; and a first opposite electrode covering the intermediate layer. The barrier layer has a second opening that is larger than the first opening and has an undercut structure.

Abstract: A sealing structure of light strip includes a light strip glue dispensing plate covered with pouring glue for packaging, and two glue blocking structures respectively arranged on two sides of the pouring glue in an extending direction on the light strip glue dispensing plate. The edge overflow of the pouring glue during glue dispensing can be prevented.

Abstract: A light emitting device includes an LED having a light emitting top surface and sidewalls. A phosphor structure is attached to the light emitting surface of the LED. The phosphor structure has a light emitting top surface facing away from the LED light emitting surface, and sidewalls. A light reflective material is arranged to cover the sidewalls of the LED and the phosphor structure. A light absorptive region is defined in the light reflective material around a perimeter of the light emitting surface of the phosphor structure. The light absorptive region may be spaced apart from the perimeter of the phosphor structure by a gap. The light absorptive region may be formed by ultraviolet laser illumination of the light reflecting material.

Abstract: An optical device of the present disclosure includes an optical element and an aberration correction element configured to correct aberration caused by the optical element. The aberration correction element includes a plurality of columnar structures made of a dielectric material. The plurality of columnar structures have a refractive index and a pitch such that a waveguide effect with respect to incident light is produced, and a diameter of a first columnar structure and a diameter of a second columnar structure among the plurality of columnar structures differ from each other.

Abstract: A light-emitting element, includes a substrate; and a semiconductor stack formed on the substrate, including: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type; and a light-emitting stack formed between the first and second semiconductor layers; wherein in a cross-sectional view, an inner region of the first semiconductor layer includes a first region with a first thickness, and an edge of the first semiconductor layer includes a second region with a second thickness larger than the first thickness.

Abstract: A light-emitting device includes: a semiconductor stacked body including: an n-type semiconductor layer having a light extraction surface and an n-side contact surface, the n-side contact surface being located on a side opposite the light extraction surface, a light-emitting layer located at a region of the n-type semiconductor layer other than the n-side contact surface, and a p-type semiconductor layer located on the light-emitting layer, wherein the p-type semiconductor layer surrounds the n-side contact surface in a top view; a first insulating film located at a region including a central portion of the n-side contact surface; an n-side electrode including an n-contact portion located at the n-side contact surface at a periphery of the first insulating film, the n-contact portion contacting the n-side contact surface; and a p-side electrode located on the p-type semiconductor layer and contacting the p-type semiconductor layer.

Abstract: A nano-structure layer is disclosed. The nano-structure layer includes a plurality of nano-photonic structures that are configured in a first configuration such that light incident upon the nano-structured layer below a cutoff angle passes through the nano-structured layer and light incident upon the nano-structured layer above the cutoff angle is reflected back in direction of the incidence.

Abstract: LED devices emitting white light comprise a blue-emitting LED, green-emitting quantum dots (QDs) and red-emitting K2SiF6:Mn4+ (KSF) phosphor. A backlight unit (BLU) for a liquid crystal display (LCD) comprises one or more blue-emitting LEDs and a polymer film containing green-emitting QDs and KSF phosphor. The QDs and/or KSF phosphor may be encapsulated in beads that provide protection from oxygen and/or moisture.

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: A pixel driving system for AMOLED display device and driving method are disclosed. The pixel driving system for AMOLED display device includes a sub-pixel driving circuit and a node voltage generating module electrically connected to the sub-pixel driving circuit. Wherein the node voltage generating module is inputted with the a red-green-blue display data for processing the red-green-blue display data, obtaining an APL value of a current frame of the AMOLED display device, and according to the APL value and a preset node voltage calculation formula, the node voltage generating module generates a corresponding node voltage and outputting to the source of the driving thin-film transistor. Adjusting the gate-to-source voltage of the driving thin-film transistor by using the APL value, thereby adjusting the driving current flowing through the light-emitting diode to adjust the entire display brightness of the AMOLED display device.

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

Abstract: A probe includes a pedestal and at least one feature extending from the pedestal to engage a surface of a corresponding contact at a position offset from a central longitudinal axis of the contact. The pedestal includes a cavity and the feature can include one or more blades that extend from a periphery of the cavity to a central longitudinal axis of the pedestal. The three blades are configured to engage the surface of the contact. The three blades can be positioned within the cavity to provide a 120-degree rotational symmetry about the central longitudinal axis of the pedestal.

Abstract: A vehicle lighting device according to an embodiment includes: a socket; a substrate that is provided on one end portion side of the socket; a frame portion that is provided on the substrate; at least one light-emitting element that is provided in a region on an inner side of the frame portion on the substrate; a sealing portion that is provided on an inner side of the frame portion and covers the light-emitting element; and an optical element that is provided on the sealing portion. An arithmetic-average roughness value of a first surface on the sealing portion side in the optical element is greater than an arithmetic-average roughness value of a second surface of the optical element on a side opposite to the first surface.

Abstract: A light-emitting diode (LED) chip with reflective layers having high reflectivity. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer.

Abstract: Provided is a light emitting diode. The light emitting diode includes a substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a conductor passing through the second semiconductor layer and the active layer to contact the first semiconductor layer.

Abstract: A headlight for a vehicle includes a light source. The light source includes: a substrate; a light emitting diode chip; and a phosphor. The phosphor through which light exiting from a light emitting surface penetrates. The phosphor includes an exiting surface through which the light from the light emitting surface penetrates and exits. A first direction of the exiting surface corresponds to a height direction of a light distribution pattern by the light exiting from the exiting surface, and a second direction of the exiting surface corresponds to a spread in a lateral direction of the light distribution pattern. A dimension in the first direction of the exiting surface is smaller than a dimension in the second direction of the exiting surface.

Abstract: According to at least one aspect, a lighting device is provided. The lighting device comprises a circuit board, a light emitting diode (LED) mounted to the circuit board and configured to emit light, a lens disposed over the LED having a bottom surface facing the circuit board, a top surface opposite the bottom surface, and a lateral surface between the top and bottom surfaces, and an elastomer encapsulating at least part of the circuit board. The elastomer may not be in contact with at least part of the lateral surface of the lens so as to form a gap between the elastomer and the lateral surface of the lens.

Abstract: A wavelength converter includes a base, a wavelength converting component that converts a wavelength of at least part of excitation light to emit converted light, and an optical filter disposed between the base and the wavelength converting component. The optical filter transmits or absorbs, out of the converted light including a wavelength range of from approximately 470 nm to approximately 750 nm, converted light of a predetermined wavelength included in the wavelength range.

Abstract: A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, and first and second external connection parts. The first semiconductor layer is exposed from the light emitting layer and the second semiconductor layer at exposed portions arranged in columns each extending in a first direction. The insulating film defines openings respectively located above the exposed portions. The first electrode is connected to the first semiconductor layer through the openings and covers a part of the second semiconductor layer via the insulating film. The first external connection part is connected to the first electrode and spaced apart from the exposed portions in the plan view. The first external connection part has a shape elongated in the first direction between adjacent ones of the columns of the exposed portions. The second external connection part is connected to the second semiconductor layer via the second electrode.

Abstract: A system, method and device for use as a reflector for a light emitting diode (LED) are disclosed. The system, method and device include a first layer designed to reflect transverse-electric (TE) radiation emitted by the LED, a second layer designed to block transverse-magnetic (TM) radiation emitted from the LED, and a plurality of ITO layers designed to operate as a transparent conducting oxide layer. The first layer may be a one-dimension (1D) distributed Bragg reflective (DBR) layer. The second layer may be a two-dimension (2D) photonic crystal (PhC), a three-dimension (3D) PhC, and/or a hyperbolic metamaterial (HMM). The 2D PhC may include horizontal cylinder bars, vertical cylinder bars, or both. The system, method and device may include a bottom metal reflector that may be Ag free and may act as a bonding layer.

Abstract: The present technology relates to a semiconductor device, a manufacturing method, and a solid-state imaging device which are capable of suppressing a decrease in bonding strength and preventing a poor electrical connection or peeling when two substrates are bonded to each other. Provided is a semiconductor device, including: a first substrate including a first electrode including a metal; and a second substrate bonded to the first substrate and including a second electrode including a metal. An acute-angled concavo-convex portion is formed on a side surface of a groove in which the first electrode is formed and a side surface of a groove in which the second electrode metal-bonded to the first electrode is formed. The present technology can be, for example, applied to a solid-state imaging device such as a CMOS image sensor.

Abstract: The present disclosure relates to a phosphor ceramic comprising a plurality of luminescence conversion materials, wherein a luminescence conversion material serves as a matrix material for the others.

Abstract: The disclosure provides a LED device, a backlight module and a display device. The LED device includes: a bracket structure and a chip, the bracket structure having a cup cavity and the chip being mounted in the cup cavity; a packaging structure, the packaging structure being provided on the bracket structure in a covering manner to seal the cup cavity and an upper surface, far away from the cup cavity, of the packaging structure forming an emergent surface; and a reflective shielding layer, the reflective shielding layer being provided on the packaging structure and the reflective shielding layer being at a central position of the emergent surface and covering part of the emergent surface. According to the disclosure, the problem in the related art that it is impossible to consider both a good color saturation and brightness contrast of a display of a display device is solved.

Abstract: A display device with improved viewing angle characteristics is provided. A display device with suppressed mixture of colors between adjacent pixels is provided. The display device includes a first coloring layer, a second coloring layer, and a structure body therebetween. The structure body has a portion closer to a display surface side than a bottom surface of the first coloring layer or a bottom surface of the second coloring layer.

Abstract: Article comprising particles in an organic polymer matrix comprising a cured thiol-alkene resin having a Tg>20° C., wherein the particles comprise a composite core and a continuous nonmetallic inorganic coating covering the composite core, wherein the composite core comprises a nonmetallic inorganic matrix, ligands, and quantum dots, wherein the nonmetallic inorganic matrix is present in the composite core in an amount of up to 40 volume percent, and wherein the coating has an average thickness up to 5 micrometers. Exemplary articles described herein can be made for use in display applications such as films, LED caps, LED coatings, LED lenses, and light guides. Exemplary articles described herein can be made for use in nondisplay applications such as security applications where quantum dot phosphors are used to provide fluorescence at selected or tailored wavelengths. In such uses, the organic polymer matrix could be a label or a coating on a label, or other articles such as a card or tag.

Abstract: Article comprising composite particles in an organic polymer matrix comprising a cured thiol-alkene resin having a Tg>20° C., the composite particles comprising a hydrophobic nonmetallic inorganic matrix, ligands, and quantum dots, wherein the hydrophobic nonmetallic inorganic matrix is present in the composite particles in an amount of up to 40 volume percent. Exemplary articles described herein can be made for use for display applications such as films, LED caps, LED coatings, LED lenses, and light guides. Exemplary articles described herein can be made for use for non-display applications such as security applications where quantum dot phosphors are used to provide fluorescence at selected or tailored wavelengths. In such uses, the organic polymer matrix could be a label or a coating on a label, or other articles such as a card or tag.

Abstract: A light source includes an optical emitter configured to emit light toward an output aperture of the light source. The light source further includes a partially reflective layer at the output aperture. The partially reflective layer is configured to receive the emitted light from the optical emitter and to reflect a portion of the received light as reflected light. The light source additionally includes a scattering medium located between the partially reflective layer and the optical emitter. The scattering medium is configured to scatter the reflected light as scattered light having a different direction from the reflected light. A portion of the scattered light is redirected toward the partially reflective layer as recycled light to be emitted from the light source. A multiview backlight that employs the light source is also provided, along with a method for operating the light source.