Abstract: An organic light emitting display including a substrate, a first electrode and a second electrode on the substrate and facing each other, at least two organic light emitting layers between the first electrode and the second electrode, and at least two color filters on the second electrode, the organic light emitting layers emitting a first color light, and the color filters emitting a second color light and a third color light.

Abstract: Planar surface mount (SM) micro light emitting diodes (?LEDs) are presented. The fabrication method provides a MOCVD LED structure with a stack including a first doped semiconductor in a first plane, a MQW layer overlying the first doped semiconductor in a second plane, and a second doped semiconductor overlying the MQW layer in a third plane. An electrical insulator is conformally deposited over the etched stack in a fourth plane, and etched to expose the second doped semiconductor, creating a first via. Etching exposes the first doped semiconductor, creating a second via. A first electrode is connected to the second doped semiconductor through the first via, and has a substrate interface surface in a fifth plane with an average planarity tolerance of less than 10 nanometers. A second electrode is connected to the first doped semiconductor through the second via, and has a substrate interface surface in the fifth plane.

Abstract: The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.

Abstract: A light emitting device includes: first and second conductive members disposed on an upper surface of a substrate; and a light emitting element disposed above a portion of an upper surface of a first electrode layer and a portion of an upper surface of a second electrode layer, above the spacer region. The upper surface of the first electrode layer and the upper surface of the second electrode layer above spacer region are located lower than the upper surface of the first electrode layer above the first conductive member and the upper surface of the second electrode layer above the second conductive member, and a reflectance of the first conductive member and the second to light emitted from the light emitting element is higher than reflectance of the first electrode layer and the second electrode layer to light emitted from the light emitting element.

Abstract: The invention relates to a method for manufacturing an optoelectronic device (1), comprising the following steps: a) providing a growth substrate (10) made from a semiconductor material; b) forming a plurality of diodes (20) each comprising a lower face (20i); c) removing at least a portion (12; 13) of the substrate so as to free the lower face (20i); wherein: step a) involves producing a lower part and an upper part of the substrate, the upper part (12) having a uniform thickness (eref) and a level of doping less than that of the lower part; step c) involving removal of the lower part (11) by selective chemical etching with respect to the upper part (12).

Abstract: Light emitting devices (LEDs) are described. An LED includes a light emitting semiconductor structure that includes a light emitting active layer disposed between an n-layer and a p-layer. A wavelength converting material may be disposed adjacent the light emitting semiconductor structure. The wavelength converting material includes multiple pores, at least one of which contains a second material. An absolute value of a ratio of a coefficient of thermal expansion of the second material to a coefficient of thermal expansion of the wavelength converting material is at least two in an embodiment, at least ten in another embodiment, at least 100 in another embodiment, and at least 1,000 in yet another embodiment.

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

Abstract: A molded component assembly includes a printed circuit board with a first face and an oppositely facing second face. Multiple light emitting diodes are mounted on a first portion of the first face. Multiple electronics components are mounted on a second portion of the first face. A light guide of a light translucent polymeric material has a contact surface directly contacting the first portion of the first face and multiple light outlets defining cavities in the light guide. The light guide is seated over the light emitting diodes and directly receives visible light from the light emitting diodes and transmits the visible light to the light outlets. A reflector plate directly contacts the light guide and extends over the second portion including the electronics components, and includes filler members extending into the light guide. The reflector plate reflects visible light back into the light guide.

Abstract: A method of manufacturing a light-emitting device includes: providing a substrate having: a first surface, a second surface opposite to the first surface, a first through-hole extending from the first surface to the second surface, and wiring on the first surface; mounting a light-emitting element on the first surface to electrically connect an electrode of the light-emitting element and the wiring; providing a cover member having a concave portion for accommodating the light-emitting element; disposing the cover member such that the cover member faces the first surface of the substrate and the concave portion accommodates the light-emitting element and leads to the first through-hole; forming a light-transmissive resin in the concave portion such that a cavity is formed between (i) part of the first surface of the substrate around the light-emitting element and (ii) the light-transmissive resin; and injecting a reflective resin material into the cavity and the first through-hole.

Abstract: An organic light-emitting display device capable of improving luminance and light extraction efficiency thereof while preventing image blur, and a method for manufacturing the same is disclosed. In accordance with the device and the method, image blur is suppressed and luminance and light-emitting efficiency are improved by forming micro-lenses on an encapsulating layer for protecting organic light-emitting elements at precise positions corresponding to the elements in a self-aligned and self-assembled manner.

Abstract: A head-up display device includes: a plurality of light sources arrayed in matrix in a Y-direction and a Z-direction; and a lens unit in which a convex lens portion for collecting radiant light radiated from the light sources is formed opposing each light source. The plurality of light sources are arranged at an interval A in a Z-direction and at an interval B, which is smaller than the interval A, in the Y-direction. The lens unit has a first connection portion and second connection portions formed at boundaries of the adjacent convex lens portions. The first connection portion extends in the Y-direction, and the second connection portions extend in the Z-direction.

Abstract: A method for making an LED lighting fixture includes the steps of: a) cutting a flat blank to form a flat plate including a central piece having a central region and a circumferential region, and a plurality of peripheral extensions; b) forming on the flat plate a patterned circuit which includes a plurality of electrical contact pairs that are formed on the central piece or the peripheral extensions; c) bringing a plurality of LED dies into electrical contact with the electrical contact pairs, respectively; and d) bending the peripheral extensions rearwardly relative to the central piece and toward the central axis to form a shell.

Abstract: A semiconductor device according to the present invention includes a semiconductor layer of SiC of a first conductivity type, a plurality of body regions of a second conductivity type formed in the surface portion of the semiconductor layer with each body region forming a unit cell, a source region of the first conductivity type formed in the inner portion of the body region, a gate electrode facing the body region across a gate insulating film, a drain region of the first conductivity type and a collector region of the second conductivity type formed in the rear surface portion of the semiconductor layer such that the drain region and the collector region adjoin each other, and a drift region between the body region and the drain region, wherein the collector region is formed such that the collector region covers a region including at least two unit cells in the x-axis direction along the surface of the semiconductor layer.

Abstract: A light emitting diode (LED) display panel includes a back plate and a pixel structure, which includes multiple pixels. Each pixel includes a reflector structure and two LEDs emitting light of a same color, all disposed on the back plate. The reflector structure of each pixel has a first reflective bank structure and a second reflective bank structure. The first reflective bank structure has a first bank opening. The second reflective bank structure has a second bank opening. The two LEDs are disposed within the first and second bank openings. The first bank opening has a first shape, and the second bank opening has a second shape, which is a mirror shape or a 180° symmetrical shape of the first shape. For each of the pixels, the first shape is a polygonal shape, and at least two corners of the first shape have an included angle less than 90°.

Abstract: A fluoride phosphor includes fluoride particles represented by AxMFy:Mnz4+ where A is at least one selected from lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and cesium (Cs), M is at least one selected from silicon (Si), titanium (Ti), zirconium (Zr), hafnium (Hf), germanium (Ge) and tin (Sn), a compositional ratio x of A satisfies 2?x?3, and a compositional ratio y of F satisfies 4?y?7; and an organic material physically adsorbed onto surfaces of the fluoride particles to allow the fluoride particles to have hydrophobicity. The fluoride particles have a concentration of Mn4+ gradually reduced from respective centers to respective surfaces of the fluoride particles.

Abstract: A nitride semiconductor light emitting element includes a first nitride semiconductor layer of a first conductivity type, nitride semiconductor stacked bodies each of which is formed on a portion of the first nitride semiconductor layer and includes a nitride semiconductor light emitting layer and a second nitride semiconductor layer of a second conductivity type, first electrodes formed on the first nitride semiconductor layer, and second electrodes each of which is formed on the second nitride semiconductor layers of the nitride semiconductor stacked bodies. The first and the second electrodes extend in a first direction. The first and the second electrodes are arranged in parallel with one another with gaps interposed therebetween in a second direction perpendicular to the first direction in plan view. A dimension of first electrodes sandwiched by second electrodes is greater than a dimension of first electrodes not sandwiched by second electrodes in the second direction.

Abstract: An in-plane-emitting semiconductor diode laser employs a surface-trapped optical mode existing at a boundary between a distributed Bragg reflector and a homogeneous medium, dielectric or air. The device can operate in both TM-polarized and TE-polarized modes. The mode exhibits an oscillatory decay in the DBR away from the surface and an evanescent decay in the dielectric or in the air. The active region is preferably placed in the top part of the DBR close to the surface. The mode behavior strongly depends on the wavelength of light, upon increase of the wavelength the mode becomes more and more extended into the homogeneous medium, the optical confinement factor of the mode in the active region drops until the surface-trapped mode vanishes. Upon a decrease of the wavelength, the leakage loss of the mode into the substrate increases. Thus, there is an optimum wavelength, at which the laser threshold current density is minimum, and at which the lasing starts.

Abstract: A housing for a light source mounted on a substrate, the housing comprising: a barrel having first and second conducting columns; and a diffuser having a through-hole or partial hole filled with a conductive plug, the conductive plug electrically bridging a gap in an electrical connection between the first and second conducting columns.

Abstract: A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.

Abstract: The wavelength conversion element converts a wavelength of part of an exciting light to generate a fluorescent light and thereby generate a combined light in which the fluorescent light is combined with a non-converted light whose wavelength is the same as that of the exciting light. The element includes a fluorescent body, a binder contacting the fluorescent body, and multiple diffuser particles included in the binder. A minimum particle diameter of the multiple diffuser particles is ¼ or more and 4 times or less of a wavelength of the fluorescent light, and a ratio of a volume of the multiple diffuser particles to a total volume of the binder and multiple diffuser particles is 25% or more and 50% or less.

Abstract: Provided is a semiconductor light emitting device 1 includes a semiconductor stacked layer 2 having a light extraction surface 3a perpendicular to a stacked surface of the semiconductor stacked layer 2, a light transmissive light guide member 3 disposed on the semiconductor stacked layer 2, a light reflective member 4 disposed on the light guide member 3, and a light reflective package 5 which has an open portion corresponding to the light extraction surface 3a and surrounds peripheral surfaces of the semiconductor stacked layer 2.

Abstract: Discussed are a light emitting device and a lighting apparatus, which include a substrate, a light emitting diode on the substrate, a refractive index adjustment layer on the light emitting diode, a light scattering layer on the refractive index adjustment layer, a first electrode disposed on the light scattering layer and connected to the light emitting diode, an organic light emitting layer on the first electrode, and a second electrode on the organic light emitting layer. The light scattering layer has a smaller refractive index than the refractive index adjustment layer.

Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.

Abstract: Disclosed are techniques related to reflectors having overall mesa shapes. Such a reflector may be formed over an overall mesa-shaped, layered structure of an apparatus for emitting light. The overall mesa-shaped, layered structure may comprise a mesa complement structure, a first-type doped semiconductor, a light emission layer, and a second-type doped semiconductor arranged in layers. Thus, the reflector may be configured to collimate light that emits from the light emission layer and reaches the reflector through the mesa complement structure.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack with a first (top) surface, a bottom surface and at least one side surface connected to the first surface and the bottom surface, a light-reflective enclosure with a second (top) surface, a contact electrode formed on the bottom surface of the light-emitting layer, and a wavelength converting layer. Moreover, the light-reflective enclosure surrounds the side surface of the light-emitting stack and exposes to the first surface. The wavelength converting layer covers the first surface and the second surface. In addition, the second surface has a plurality of fine concave structures distributed on the second surface.

Abstract: The invention describes a thermal block assembly comprising a first thermally and electrically conductive block part realised for connection to an anode pad of a light-emitting diode (LED) and dimensioned to provide an essentially complete thermal path for heat originating at the anode pad; a second thermally and electrically conductive block part realised for connection to a cathode pad of the LED and dimensioned to provide an essentially complete thermal path for heat originating at the cathode pad; and a bonding layer applied to the block parts to fix the positions of the block parts on either side of a gap. The invention further describes an LED arrangement comprising said thermal block assembly and at least one LED mounted thereto, and a method of manufacturing said thermal block assembly.

Abstract: A concentrating solar cell module including; a base portion having a plurality of mounting regions for mounting solar cells and a plurality of lead electrodes for electrically connecting the solar cells with external electrodes; a support composed of a thermosetting resin, the support surrounding each of the mounting regions of the base portion; the solar cells mounted on the mounting regions; and a condensing lens molded above the mounting regions so as to encapsulate the solar cells, wherein a surface of the mounting regions of the base portion is plated, the condensing lens is molded with a transparent thermosetting silicone resin, and the support is joined to a surface of the base portion, the surface to which the support is joined is on the same side of the base portion as the surface on which the solar cells are mounted.

Abstract: A light emitting device includes light emitting elements having light extraction faces, respectively. A light transmissive member includes a lower face facing the light extraction faces, an upper face opposite to the lower face in a height direction, and first to fourth side faces that are connected to the lower face and the upper face. An area of the lower face is larger than a sum of areas of the light extraction faces. An area of the upper face is smaller than the area of the lower face. The second side face is substantially parallel to the first side face. The third side face and the fourth side face are provided between the first side face and the second side face and opposite to each other. The third side face and the fourth side face approach as approaching from the lower face to the upper face in the height direction.

Abstract: A light emitting device, including an LED semiconductor die, a photoluminescent structure and a reflector, is disclosed. The photoluminescent structure with a beveled edge surface is disposed on top of the LED semiconductor die, wherein a lower surface of the photoluminescent structure adheres to an upper surface of the LED semiconductor die. A reflective resin material is disposed surrounding edge surfaces of the LED semiconductor die and the photoluminescent structure forming a beveled reflector. A method to manufacture the above light emitting device is also disclosed. Advantages of this light emitting device with beveled reflector include increasing the light extraction efficiency, making the viewing angle tunable, improving spatial color uniformity and reducing the light source etendue realized in a compact form-factor size.

Abstract: Described herein are light emitting apparatuses with minimized light emission areas and methods for fabricating such apparatuses. In certain embodiments, the emission area corresponds to an area of an electrical contact and is minimized by minimizing the area of the electrical contact. The electrical contact is configured to receive an electrical signal that causes a light emission layer to generate light. The light emission layer is between a first semiconductor layer and a second semiconductor layer, with the electrical contact being formed on the second semiconductor layer. To protect the second semiconductor layer from damage during an etching process, a conductive body is formed around the electrical contact, where the conductive body is a non-ohmic contact to the second semiconductor layer. The conductive body acts as an etch stop against unintended etching of the second semiconductor layer as a result of an alignment error during the etching process.

Abstract: An optoelectronic component includes a carrier, wherein a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are arranged above a top side of the carrier, the optoelectronic semiconductor chips each include a top side, an underside situated opposite the top side, and side faces extending between the top side and the underside, the undersides of the optoelectronic semiconductor chips face the top side of the carrier, a first potting material is arranged above the top side of the carrier, the first potting material covering parts of the side faces of the first optoelectronic semiconductor chip, and a second potting material is arranged above the top side of the carrier, and the second potting material covering the first potting material.

Abstract: A light-emitting diode package includes a substrate, at least one light-emitting chip, a light-reflective layer and a wave-length conversion fluorescent layer. The light-emitting chip is located on the substrate. The light-reflective layer is arranged around the light-emitting chip. The wave-length conversion fluorescent layer is located over the light-emitting chip, wherein the light-reflective layer is spaced from the fluorescent wave-length conversion layer by a groove that reaches two opposite sides of the light-emitting diode package.

Abstract: The present disclosure provides RGB-LED packaging modules and a display screen including a substrate; a plurality of light-emitting units disposed on the substrate, each light-emitting unit including a set of RGB-LED chips; a plastic layer provided on the light-emitting units; and a virtual isolating region provided between the light-emitting units, the virtual isolating region including a black light-absorbing layer provided on the substrate. The present disclosure makes use of the black light-absorbing layer to absorb light which may cause interference among the light-emitting units. By providing the virtual isolating region and an isolating trough, and utilizing the difference of refractive index of packaging plastic and refractive index of air, light emitted by the light-emitting units can be reflected to reduce the influence of adjacent light-emitting units. A black isolating-frame is filled in the isolating trough to minimize the interference among the light-emitting units.

Abstract: A lighting device includes a substrate and light sources that are top-emitting light sources. The substrate includes a first plate surface and a second plate surface. The light sources include first electrodes and second electrodes. A reflection layer made of metal, an insulating layer, and a first conductive pattern are formed on the first plate surface in this sequence from a lower layer side. A second conductive pattern is formed on the second plate surface. The light sources are disposed on the first plate surface with the first electrodes and the second electrodes electrically connected to the first conductive pattern and at least the first electrodes or the second electrodes electrically connected to the second conductive pattern via holes in the substrate. The reflection layer is divided into divided reflection areas by slits. The holes are formed in the divided reflection areas, respectively.

Abstract: An opto-electronic (OE) device may include an optical fiber including a core and a cladding surrounding the core. The optical fiber may have a recess therein defining a circuit component attachment area. The OE device may include an electrically conductive circuit pattern on the circuit component attachment area and an active OE circuit component on the circuit component attachment area, optically coupled to the optical fiber, and electrically coupled to the electrically conductive circuit pattern. The OE device may further include a protective body surrounding the optical fiber and the active OE circuit component, and electrical conductors integrally formed with the electrically conductive circuit pattern, extending through the protective body, and having distal ends exposed on the protective body for external connection.

Abstract: An optical structure has a cavity (1) with an opening provided at one end and a first through hole or first gap (21) provided at the end opposite the opening. The cavity is further provided internally with a beam splitter or a dichroic mirror (4). A first LED (31) emits light into the cavity through the first through hole or the first gap, which passes directly passing through the beam splitter or dichroic mirror and exits from the opening of the cavity A second LED (32) emits light into the cavity through a second through hole or second gap (22) in a side of the cavity, which is reflected by the beam splitter or dichroic mirror. It is then fused with the light emitted by the first LED. The light emitted by the respective LEDs have an identical optical path length to the beam splitter or the dichroic mirror.

Abstract: A light emitting device includes a light emitting element, a light-transmissive member, a covering member, and a base member. The light-transmissive member has a flange on a lateral surface thereof in such a manner as to continue from a periphery of an upper surface to a periphery of a lower surface of the light-transmissive member and to be positioned outside the upper surface of the light-transmissive member and an upper surface of the light emitting element in plan view. The flange has a thin portion at an inner side than the outer edge side of the flange. The thin portion has a thickness smaller than a thickness of the outer edge side of the flange.

Abstract: A light emitting device includes: a base member including: a first lead, a second lead, and a supporting member, the base member having an upper surface including a first surface, which is a surface of the first lead, a second surface, which is a surface of the second lead, and a third surface, which is a surface of the supporting member; a light emitting element located on the first surface; a protective element located on the second surface; a wire having a first end connected to the first surface, and a second end connected to a terminal electrode of the protective element; a resin frame located on the upper surface of the base member; a first resin part surrounded by the resin frame and covering the light emitting element and the first end of the wire; and a second resin part covering the resin frame and the first resin part.

Abstract: A light emitting device for a display includes a substrate and first, second, and third LED sub-units, a first transparent electrode between the first and second LED sub-units and in ohmic contact with the first LED sub-unit, a second transparent electrode between the second and third LED sub-units and in ohmic contact with the second LED sub-unit, a third transparent electrode between the second transparent electrode and the third LED sub-unit and in ohmic contact with the third LED sub-unit, at least one current spreader connected to at least one of the first, second, and third LED sub-units, electrode pads disposed on the substrate, and through-hole vias formed through the substrate, in which at least one of the through-hole vias is formed through the substrate and the first and second LED sub-units.

Abstract: A light emitting device includes a package having a recess including an opening, a bottom surface, and an inner lateral surface extending from the bottom surface. A covering member covers at least one of the bottom surface or the inner lateral surface. A light emitting element is mounted on the bottom surface and has a light emitting surface. A sealing member is provided in the recess to cover the light emitting surface and has a light output surface having a concave shape. The sealing member includes a light-transmissive material containing a fluorescent material. A first film is provided on a part of the light output surface of the sealing member to reflect a part of the light emitted from the light emitting element, another part of the light emitted from the light emitting element being configured to pass through the first film.

Abstract: A display device is provided. The display device includes a substrate, a driving circuit disposed on the substrate, and a light-emitting unit disposed on the driving circuit and electrically connected to the driving circuit. The light-emitting unit includes a first semiconductor layer, a quantum well layer disposed on the first semiconductor layer and a second semiconductor layer disposed on the quantum well layer. The second semiconductor layer includes a first top surface. The display device also includes a first protective layer disposed on the driving circuit and adjacent to the light-emitting unit. The first protective layer includes a second top surface and a plurality of conductive elements formed therein. The elevation of the first top surface is higher than the elevation of the second top surface.

Abstract: A light-emitting diode (LED) includes s a substrate, a LED chip, and an optical lens. The LED chip is fixedly mounted to the substrate for emitting a light beam. The optical lens is mounted to the substrate and covers the LED chip. The optical lens has a light exit surface, which directs the light beam from the LED chip to travel in a direction along an optical axis to form a non-symmetric light shape. Also disclosed is a surveillance camera device that uses the LED. As such, the drawback of a conventional surveillance camera being incapable of acquiring an excellent image due to light source being overly concentrated can be eliminated.

Abstract: A structure with micro device including a substrate, at least one micro device and at least one holding structure is provided. The micro device is disposed on the substrate and has a top surface away from the substrate, a bottom surface opposite to the top surface, and a circumferential surface connecting the top surface and the bottom surface. The holding structure is disposed on the substrate. From the cross-sectional view, a thickness of the holding structure is not fixed from the boundary of the top surface and the circumferential surface to the substrate. The micro device is connected to the substrate through the holding structure.

Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 ?m or more.

Abstract: The present disclosure provides a method for manufacturing a flexible substrate. The method includes forming at least two flexible substrate layers in a stacking form on a surface of a glass baseplate, wherein a first flexible substrate layer of the flexible substrate layers relatively close to the glass baseplate has a refractive index less than a refractive index of a second flexible substrate layer of the flexible substrate layers relatively far from the glass baseplate; forming a water and oxygen blocking layer on a surface of the second flexible substrate layers, wherein the water and oxygen blocking layer has a refractive index greater than the refractive index of the second flexible substrate layers disposed below the water and oxygen blocking layer.

Abstract: A cover window includes: a base film disposed on a display panel of a display device which displays an image with light; and porous nanoparticles embedded in the base film at a side of the base film opposite to that at which the display panel is disposed.

Abstract: The invention provides a manufacturing method of micro LED display panel, comprising: Step S1: providing a driving substrate, forming a photoresist layer on the driving substrate; Step S2: patterning the photoresist layer to form a plurality of accommodating grooves arranged in an array; Step S3: disposing a micro LED in each accommodating groove. By fabricating the photoresist layer to form the accommodating groove for accommodating the micro LED, the invention can reduce the manufacturing difficulty and improve the light emission efficiency of the micro LED.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: A method includes mounting a ceramic phosphor (102) on an acrylic-free and metal-containing catalyst-free tacky layer (108) of a dicing tape (104), dicing the ceramic phosphor (102) from the dicing tape (104) into ceramic phosphor plates (11)2, removing the ceramic phosphor plates (112) from the dicing tape (104), and attaching the ceramic phosphor plates (112) on light-emitting device (LED) dies.

Abstract: Provided is a display apparatus. The display apparatus may include a display panel and a backlight provided adjacent the display panel. The backlight may include an optical sheet provided adjacent the display panel, a reflector provided a prescribed distance from the optical sheet, at least one light emitting device provided adjacent the reflector, and a lens provided over a corresponding the light emitting device. The lens may include a lower recess formed on a bottom surface of the lens and provided a prescribed distance over the light emitting device, and an upper recess formed on a top surface of the lens and provided to vertically overlap the bottom recess. The lower recess may include an upper surface that extends from the side surface and having a prescribed shape and curvature. The upper recess may also include a lower surface having a prescribed shape and curvature.