Abstract: A display device is provided. The display device includes a supporting film and a flexible substrate disposed on the supporting film. The display device also includes a driving layer disposed on the flexible substrate, and a conductive pad disposed on the driving layer. The display device further includes a light-emitting diode disposed on the conductive pad and electrically connected to the conductive pad, wherein the supporting film has a first hardness, the flexible substrate has a second hardness, and the first hardness is greater than or equal to the second hardness.

Abstract: A chip-scale package type light emitting diode is provided. In the light emitting diode according to one embodiment, an opening exposing a pad metal layer is separated from an opening of a lower insulation layer which exposes an ohmic reflection layer formed on a mesa. Therefore, it is possible to prevent solder, particularly Sn, from diffusing and contaminating the ohmic reflection layer.

Abstract: In accordance with certain embodiments, a light-emitting element composed of one or more discrete units configured for light emission is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the light-emitting element or non-coplanarity of the semiconductor die contacts.

Abstract: A flexible OLED panel for a lighting device according to the present invention includes a substrate which is made of a polymer material and has a first light extracting pattern provided on a lower surface thereof; an auxiliary wiring pattern which is arranged on the substrate; a first electrode which is arranged on the substrate on which the auxiliary wiring pattern is arranged; a passivation layer which is arranged on the first electrode, at least on an area on which the auxiliary wiring pattern is arranged; an OLED light emitting structure which is arranged on the first electrode on which the passivation layer is arranged; a second electrode which is arranged on the OLED light emitting structure; and an encapsulation layer which is arranged on the second electrode.

Abstract: The present invention provides a display panel and a manufacturing method thereof. The display panel comprises a micro light emitting diode and a thin film transistor electrically coupled to the micro light emitting diode. The micro light emitting diode comprises a P type semiconductor and a N type semiconductor. The P type semiconductor is close to the thin film transistor and the N type semiconductor is configured at one side of the P type semiconductor away from the thin film transistor. One surface of the N type semiconductor away from the P type semiconductor is roughened by a plasma surface treatment process. Since a thickness of the N type semiconductor is larger than a thickness of the P type semiconductor, the crystal quality of material of the N type semiconductor will not be affected as the N type semiconductor is roughened to increase the light efficiency.

Abstract: A thin-film encapsulation structure of an active-matrix organic light-emitting, diode (AMOLED) is provided, and a touch electrode layer is disposed thereon. The thin-film encapsulation structure includes a first ceramic layer, an organic layer, and a second ceramic layer. The second ceramic layer has a first film layer and a second film layer; a side end of the second film layer is contracted inward so that a recessed first step portion is defined at the side end of the second film layer and a side end of the first film layer. The second ceramic layer is changed into a design of a multi-layer stacked structure, and a recessed step portion is formed at the side ends of the upper and lower layers. Therefore, the traces can be placed in a larger space and resistant to line breakage, thereby ensuring the yield and product performance.

Abstract: A method of packaging a semiconductor illumination module is provided. The method includes the following steps. In a step (a), a substrate is provided. The substrate is selected from one of a flexible printed circuit board, a metal core circuit board, a printed circuit board or a ceramic printed circuit board. The substrate includes a solder mask layer with an opening, and the opening has a width R. In a step (b), a light-emitting element is installed in the opening. In a step (c), an encapsulant injection device is used to inject a packaging encapsulant into the opening. In a step (d), a sealed lens structure is formed to cover the light-emitting element, wherein the sealed lens structure has a height h.

Abstract: A component carrier includes an electrically insulating layer structure having a first main surface and a second main surface with a through hole extending through the electrically insulating layer structure between the first main surface and the second main surface. An electrically conductive bridge structure connects opposing sidewalls of the electrically insulating layer structure delimiting the through hole. A vertical thickness of the electrically insulating layer structure is not more than 200 ?m and a narrowest vertical thickness of the bridge structure is at least 20 ?m.

Abstract: A method of liquid assisted binding is provided. The method includes: forming a conductive pad on the substrate; placing a micro device on the conductive pad, such that the micro device is in contact with the conductive pad in which the micro device comprises an electrode facing the conductive pad; forming a liquid layer on the micro device and the substrate after said placing, such that a part of the liquid layer penetrates between the micro device and the conductive pad, and the micro device is gripped by a capillary force produced by said part of the liquid layer; and evaporating the liquid layer such that the electrode is bound to the conductive pad and is in electrical connection with the conductive pad.

Abstract: An LED display includes a wafer-level substrate, a first adhesive layer, a plurality of first light-emitting assemblies, and a first conductive structure. The wafer-level substrate includes a plurality of control circuits, each of which has a conductive contact. The first adhesive layer is disposed on the wafer-level substrate. Each first light-emitting assembly includes a plurality of first LED structures disposed on the first adhesive layer. The first conductive structure is electrically connected between the corresponding first LED structure and the control circuit. Thereby, each first light-emitting assembly including a plurality of first LED structures and a wafer-level substrate having a plurality of control circuits can be connected to each other through a first adhesive layer.

Abstract: The embodiments of the present invention relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device. A light emitting device according to an embodiment has: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer disposed on the light emitting structure; and an insulating reflective layer disposed on the passivation layer. The passivation layer may include a first region disposed on an upper surface of the light emitting structure, and a second region disposed on side surfaces of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer.

Abstract: A semiconductor device assembly that includes a flexible member having a first portion connected to a substrate and a connector attached to a second portion of the flexible member. The connector is electrically connected to the substrate via a conducting layer within the flexible member. The substrate may be a semiconductor device, such as a chip. The connector may be configured to connect the semiconductor device to another semiconductor device assembly or a system board, such as a printed circuit board. A material may encapsulate at least a portion of the substrate of the semiconductor assembly. The semiconductor device assembly may be formed by selectively connecting the flexible member to a first substrate. A second substrate and connector may then be connected to the flexible member. A release layer may be used to release the assembly of the second substrate, flexible member, and connector from the first substrate.

Abstract: A light-emitting semiconductor chip, a light-emitting component and a method for producing a light-emitting component are disclosed. In an embodiment a light-emitting semiconductor chip includes a light-transmissive substrate having a top surface, a bottom surface opposite the top surface, a first side and a second side surface arranged opposite the first side surface, a semiconductor body arranged on the top surface of the substrate and a contacting including a first current distribution structure and a second current distribution structure, wherein the first current distribution structure and the second current distribution structure are freely accessible from a side of the semiconductor body facing away from the substrate, and wherein the semiconductor chip, on the side of the semiconductor body facing away from the substrate and on the bottom surface of the substrate, is free of any connection point configured to electrically contact the first and second current distribution structures.

Abstract: A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

Abstract: Matching of coefficient of thermal expansion for heat spreaders and carrier die can facilitate optoelectronic die alignment. In one example, an apparatus comprises a carrier die comprising a first coefficient of thermal expansion, two or more optoelectronic die disposed on the carrier die, and a spreader. The spreader can comprise a second material coefficient of thermal expansion matched to the first coefficient of thermal expansion. Additionally, a thermal interface material is disposed between the spreader and the one or more optoelectronic die.

Abstract: The invention describes a LED lighting unit comprising a heatsink; an LED module mounted onto the heatsink, which LED module comprises a carrier, a number of LED dies mounted on the carrier, and LED electrode contacts formed on the carrier; an overmould formed to encase the heatsink and to expose the mounting surface region of the heatsink upon which the LED module is mounted; and an electrical interface also encased in the overmould and arranged to electrically connect the LED module to a power supply. The invention further describes a method of manufacturing such an LED lighting unit.

Abstract: A light emitting device includes a first light emitting cell, a second light emitting cell, a first conductive pattern, a second conductive pattern, and a connection pattern. The connection pattern includes contact portions electrically connected to a second conductivity type semiconductor layer of the first light emitting cell and a first conductivity type semiconductor layer of the second light emitting cell. At an edge of a first region facing the second light emitting cell, one contact portion of the first conductive pattern is disposed between the contact portions of the connection pattern electrically connected to the second conductivity type semiconductor layer of the first light emitting cell, and one contact portion of the first conductive pattern is open outwards.

Abstract: A display apparatus, comprising an element substrate including a display portion formed by arraying a plurality of organic light emitting elements on a base and a connecting portion provided on the base so as to be separated from the display portion, a driving substrate connected to the connecting portion so as to be configured to drive the display portion, and a heat-insulating portion provided between the display portion and the connecting portion in planar view in the base and configured to have lower heat conductivity than the base.

Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.

Abstract: A plurality of light-emitting units (140) are provided on a first surface (100a) of a substrate (100) and are separated from each other. Each light-emitting unit (140) includes a light-transmitting first electrode (110), an organic layer (120), and a light-reflective second electrode (130). The organic layer (120) is located between the first electrode (110) and the second electrode (130). A light-transmitting region is located between the light-emitting units (140) and transmits light in the thickness direction of a light-emitting device (10). An optical filter (200) overlaps the light-transmitting region and does not overlap the plurality of light-emitting units (140).

Abstract: A light source device includes a package and a substrate. The package includes first and second electrodes. The first electrode has first and second parts separated from each other by a first separation region on a lower surface side of the first electrode while the first part is continuous with the second part on an upper surface side. The substrate includes a pair of wiring members. Lower surfaces of the first and second parts face and are mounted on an upper surface of one of the wiring members. A lower surface of the second electrode faces and is mounted on an upper surface of the other of the wiring members. A region of the substrate facing the first separation region has solder wettability lower than solder wettability of the upper surface of the one of the wiring members facing the first part and the second part of the first electrode.

Abstract: An LED display module contains a PCB, one or more layers of molding compound disposed on the surface of the PCB, a network of conductive tracks disposed on a surface of the one or more layer of molding compound away from the PCB, a plurality of through-holes extending through the one or more layers of molding compound, and an array of LED chips disposed in the one or more layers of molding compound. Each of electrodes on the LED chip is connected to one of the conductive pads via a conductive path. The conductive path comprises a conductive material inside one of the plurality of the through-holes and a portion of the network of conductive tracks.

Abstract: A light emitting device includes: a base; a first semiconductor laser element disposed on an upper surface of the base and configured to emit first light; a first light reflecting member disposed on the upper surface of the base and configured to reflect the first light upwards; a phosphor member having a lower surface onto which the first light is irradiated and an upper surface serving as a light extraction surface; and a light shielding member surrounding lateral surfaces of the phosphor member. First and second regions of the first light reflecting member are formed such that a portion of the light reflected by the first region that is reflected on a side close to the second region and a portion of the light reflected by the second region that is reflected on a side close to the first region intersect before reaching the lower surface of the phosphor member.

Abstract: Certain aspects of the present disclosure provide apparatus for thermal matching of integrated circuits (ICs). One example apparatus generally includes a first substrate, a first IC disposed on the first substrate and having a second substrate, and a second IC disposed on the first substrate. The second IC may include a third substrate, a thermal conductivity adjustment region comprising different material than the third substrate, the thermal conductivity adjustment region being adjacent to a first side of the third substrate, and one or more electrical components formed in one or more layers of the second IC adjacent to a second side of the third substrate, wherein the first side and the second side are opposite sides of the third substrate, and wherein a thermal conductivity of the thermal conductivity adjustment region is closer to a thermal conductivity of the second substrate than a thermal conductivity of the third substrate.

Abstract: Provided is a semiconductor device including a semiconductor chip; a frame member having a chip placement surface on which the semiconductor chip is provided; and a first suspension lead and a second suspension lead connected to the frame member and provided on any side of the frame member, wherein M1?L1+L2 is satisfied, where L1 is a distance from an arrangement position of the first suspension lead to a corner of the chip placement surface close to the first suspension lead, L2 is a distance from an arrangement position of the second suspension lead to a corner of the chip placement surface close to the second suspension lead, and M1 is a distance from the arrangement position of the first suspension lead to the arrangement position of the second suspension lead.

Abstract: A vehicle lamp including a base portion; and a plurality of light source modules arranged on one surface of the base portion. Further, each of the light source modules includes a plurality of semiconductor light emitting devices, and a plurality of electrodes electrically connected to the semiconductor light emitting devices. At least first side included in the light source modules faces a second side of a neighboring light source module, and the plurality of electrodes are arranged on sides facing to each other, respectively, such that the light source modules are electrically connected to each other.

Abstract: Examples of the present disclosure are related to systems and methods for lighting fixtures. More particularly, embodiments disclose lighting fixtures utilizing metal core PCB (MCPCB) for thermal, mechanical, and/or optical controls.

Abstract: The invention provides an optical module including a circuit board, an optical component and an electrical interface, and the circuit board is provided with a signal rate transmission chip, a laser driver chip, a transimpedance limiting amplifier chip, a vertical cavity surface-emitting laser chip array and a photodetector chip array, and the signal rate transmission chip is electrically connected with the laser driver chip and the transimpedance limiting amplifier chip through the first microstrip line, and the optical component includes an interface end MT ferrule, and a light-emitting ribbon optical cable and a light-receiving ribbon optical cable both connected with the interface end MT ferrule, the light-emitting ribbon optical cable is coupled and aligned with the vertical cavity surface-emitting laser chip array, and the light-receiving ribbon optical cable is coupled and aligned with the photodetector chip array, and the electrical interface includes a gold finger disposed on one side of circuit board

Abstract: According to one embodiment, the light guide plate has a first major surface, a second major surface, a side surface, and a recess. The recess is provided in the second major surface. The fluorescent layer is provided in the recess. The light-emitting element is bonded to the fluorescent layer and includes an electrode on a surface of the light-emitting element on a side opposite to a surface of the light-emitting element bonded to the fluorescent layer. The module side surface includes at least a portion of the side surface of the light guide plate. The first interconnect is provided along the second major surface and connected to the electrode of the light-emitting element. The second interconnect is provided on the module side surface and connected to the first interconnect.

Abstract: A solid state light emitter package (200), a lamp, a luminaire and a method of manufacturing the solid state light emitter package are provided. The solid state light emitter package comprising a solid state light emitter die (230), a first and second lead frame (210, 220), an electrical insulating material (242, 244), a thermal element (250) and a bridging element (260). The first and second lead frame are electrically isolated from each other and provide power to said die. Said die is at least partially provided on the first lead frame. The thermal element is in between the first and second lead frame and is electrically isolated by the electrical insulating material from said lead frames. The thermal element is at least one of a heat absorber or a heat spreader. The bridging element bridges the electrical insulating material and the thermal element and provides an electrical connection between said die and the second lead frame.

Abstract: In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.

Abstract: An optoelectronic assembly comprising an optoelectronic component, which comprises a specularly reflective surface and comprising a radiation cooler in direct physical contact with the optoelectronic component. The radiation cooler is arranged above the specularly reflective surface.

Abstract: A method of manufacturing a light emitting module including a substrate; a light emitting element having an electrode formation surface comprising a positive and negative pair of element electrodes, and a light emitting surface on the side opposite to the electrode formation surface; a wiring electrode connected to the element electrode; and a light reflective resin layer, the method of manufacturing a light emitting module including: placing the light emitting element on a support member, in a state with the electrode formation surface facing upward, and the light emitting surface facing downward; forming a coating layer on the support member, surrounding the light emitting element; forming the wiring electrode extending from the element electrode over the coating layer; forming the light reflective resin layer on the wiring electrode and the coating layer; joining the substrate on top of the light reflective resin layer; removing the support member; and removing the coating layer.

Abstract: The present disclosure provides a method for packaging a camera assembly. The method includes providing a photosensitive chip having a plurality of first soldering pads; mounting a filter on the photosensitive chip; providing a first carrier substrate; and bonding a plurality of functional components and the photosensitive chip to the first carrier substrate. The plurality of functional components has a plurality of second soldering pads, and the first soldering pads and the second soldering pads all face away from the first carrier substrate. The method includes forming an encapsulation layer to cover the first carrier substrate, the photosensitive chip, and the functional components. The encapsulation layer exposes the filter. The method further includes forming a redistribution layer structure, on one side of the encapsulation layer close to the filter, to electrically connect to the first soldering pads and the second soldering pads; and removing the first carrier substrate.

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract: A light emitting device including: a light emitting element, a phosphor plate, and a light guiding part. The lower face of the light emitting element has a rectangular shape. The light guiding part covers lateral faces of the light emitting element and the lower face of the phosphor plate that is exposed from the light emitting element. The light guiding part has one or more lateral faces having at least one of structures below: a height at both ends being different from the height at a central area; outer lateral faces being parallel to the lateral faces of the light emitting element.

Abstract: Light emitting diode (LED) packages and LED displays utilizing the LED packages are disclosed. LED packages can have a plurality of cavities with each having one or more LEDs. The LEDs can be individually controllable so that the LED package emits the desired color combination of light from the package. The LED packages are arranged with an encapsulant over the cavities that shape the LED package emission to a wide angle or pitch. Some of the LED packages can have three cavities, while others can have four or more cavities. The packages can comprise an encapsulant that forms lenses over the cavities and continues beyond the cavities to cover surfaces of the LED package body. The body can include different anchoring features to improve package reliability by anchoring the encapsulant to the body. One embodiment of an LED display according to the present invention comprises a plurality of LED packages, at least some having a plurality of cavities.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer located on the substrate; a mesa arranged on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer coming in contact with the n-type semiconductor layer; a p-ohmic contact layer coming in contact with the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a main branch and a plurality of sub branches extending from the main branch, the n-ohmic contact layer encompasses the mesa and is interposed in an area between the sub branches, and the n-bump and the p-bump respectively cover the upper part and sides of the mesa. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.

Abstract: A component having a boundary element is disclosed. In an embodiment a component comprises a semiconductor chip, a housing and a reflective layer, wherein the housing has a shaped body and a base body, the shaped body laterally enclosing the base body at least in places and being different from the reflective layer. In a plan view, the base body has a free area which is uncovered by the shaped body. The free area or a bottom surface of a cavity comprises a mounting surface for the semiconductor chip, wherein the semiconductor chip is arranged on the mounting surface. The bottom surface or the free area is partially covered by the reflective layer, wherein the mounting surface is enclosed at least in regions by a boundary element which adjoins the reflective layer and is configured to prevent the semiconductor chip from being covered by the reflective layer.

Abstract: An organic light-emitting display device characterized by improved reliability is disclosed. The organic light-emitting display device is configured such that each of an organic encapsulation layer, which is disposed on a light-emitting element, and an upper inorganic encapsulation layer, which is disposed on the organic encapsulation layer, are divided into a plurality of parts. Even when cracks are formed in a subpixel due to an external impact or when external moisture or oxygen permeates into the subpixel, therefore, it is possible to prevent the cracks, the moisture, or the oxygen from diffusing to an adjacent subpixel, whereby the reliability and lifespan of the display device are improved.

Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element; a sealing resin covering the light emitting element; and a support member including a base and supporting the light emitting element and the sealing resin, the base including a base main surface facing one side of first direction, a base back surface facing the other side of the first direction, a pair of first base side surfaces opposite each other in second direction orthogonal to the first direction, and a pair of second base side surfaces opposite each other in third direction orthogonal to the first and second directions, wherein the support member includes a raised plane raised from the base main surface in the first direction, and wherein the plane is exposed from the sealing resin and includes a portion extending from one edge to the other edge in the third direction when viewed in the first direction.

Abstract: A package includes a first lead, a first molded body, a second lead, and a second molded body. The first lead includes a first portion which has a first recess portion or a first through hole passing through the first portion. The second lead is provided on the first lead to be bonded to the first lead such that a bonding side surface faces to the first lead. The second lead includes a second portion which overlaps with the first portion and which has a second recess portion on the bonding side surface or a second through hole passing through the second portion. The second recess portion communicates with the first through hole. The second through hole communicates with the first recess portion. The second molded body fills the first through hole and the second recess portion, or fills the first recess portion and the second through hole.

Abstract: Some embodiments are directed to an optoelectronic device for converting an electrical signal into electromagnetic radiation or vice-versa, including an active zone sandwiched between first and second electrodes, the optoelectronic device having a stack of layers with a lateral edge and first and second opposite faces, the layers of the stack forming at least the active zone and the first and second electrodes, the stack being intended to receive or emit the electromagnetic radiation through the lateral edge perpendicularly to the direction of stacking of the layers.

Abstract: A display device having light emitting elements that respectively include a first electrode formed on a substrate, a laminated structure formed on the first electrode, and a second electrode formed on the laminated structure. The laminated structure is formed by laminating, in the following order from the first electrode side, at least a first organic layer including a first light emitting layer, a charge generation layer in which a first layer into which a first carrier is injected and a second layer into which a second carrier is injected are laminated, and a second organic layer including a second light emitting layer. In a light emitting element including a defect region, the charge generation layer is in a high electrical resistance state or an insulated state in the defect region, while being in a low electrical resistance state in a region other than the defect region.

Abstract: A pixel structure includes at least one sub-pixel. The sub-pixel includes a substrate, a first micro light-emitting element, a repair micro light-emitting element, a first connecting line, a second connecting line, and a bridge pattern. The first micro light-emitting element is disposed on the substrate. The repair micro light-emitting element is disposed on the first micro light-emitting element and partially overlaps the first micro light-emitting element in a vertical direction of the substrate. The first connecting line is electrically connected to a first electrode of the first micro light-emitting element and a third semiconductor layer of the repair micro light-emitting element. The second connecting line is electrically connected to a second electrode of the first micro light-emitting element.

Abstract: An optoelectronic component including a first optoelectronic semiconductor chip configured to emit light includes a wavelength from an infrared spectral range, and a second optoelectronic semiconductor chip configured to emit light including a wavelength from a visible spectral range, wherein the optoelectronic component includes a reflector body including a top side and an underside, the reflector body includes a cavity opened toward the top side, a wall of the cavity constitutes a reflector, and the first optoelectronic semiconductor chip is arranged at a bottom of the cavity.

Abstract: An optical connector includes a core block, a flexible wiring board, an optical device array, a drive circuit, and a housing. The core block has a plurality of faces. The flexible wiring board has an external connection terminal, a first area arranged on a first face of the core block, and a second area arranged on a second face of the core block. The optical device array is mounted on the first area of the flexible wiring board and includes at least one group of a plurality of optical devices for transmission and a plurality of optical devices for reception arranged. The drive circuit is mounted on the second area of the flexible wiring board and drives the optical device array. The housing stores the core block, the optical device array, and the drive circuit such that the external connection terminal of the flexible wiring board is arranged outside the housing.

Abstract: A LED illumination module has at least one LED (6). At a proximal side there is a first electric connection contact (8) and at an axially oppositely directed distal side there is a second electrical connection contact (10) as well as a radiation region emitting radiation. The LED (6), at the second electrical connection contact (10), is contacted via an electrically conductive sleeve (14) which, distanced to the proximal end, is electrically conductively connected to the second connection contact (10) of the LED (6).

Abstract: Light emitting devices are described herein. A light-emitting device includes a substrate having a surface below an optical cavity, one or more light emitting diodes (LEDs) disposed above the surface of the substrate, a first wavelength-converting layer, and a second wavelength-converting layer. The first wavelength-converting layer is disposed on the surface of the substrate below the optical cavity, covers the entire surface of the substrate except for portions of the surface of the substrate that are situated underneath any of the one or more LEDs, and has a thickness that is equal to or less than a thickness of at least one of the one or more LEDs. The second wavelength-converting layer is disposed above the optical cavity.