Abstract: An embodiment of the present invention discloses a Liquid Crystal on Silicon (LCOS) display unit, in which a Metal-Insulator-Metal (MIM) capacitor consisting of a micromirror layer, a insulation layer and a light shielding layer is formed by grounding the light shielding layer on a pixel switch circuit layer. Therefore the pixel switch circuit and the capacitor are in vertical distribution, that is, the switch circuit and the capacitor both have an allowable design area of the size of one pixel. Another embodiment of the present invention provides a method for forming a Liquid Crystal on Silicon (LCOS) display unit.

Abstract: A liquid crystal display (“LCD”) device includes a first thin film transistor (“TFT”) applying a high gray-scale data signal supplied from a first data line to a first pixel electrode, an upper electrode connected to the first pixel electrode through a first contact hole, and directly connected to the first TFT, a first storage capacitor storing the high gray-scale data signal, a second TFT applying a low gray-scale data signal supplied from a second data line to a second pixel electrode through a second contact hole, an upper electrode connected to the second pixel electrode through a third contact hole, and a second storage capacitor storing the low gray-scale data signal.

Abstract: Provided are a TFT LCD array substrate and manufacturing method thereof. The TFT LCD array substrate comprises a substrate, a gate line and a data line formed on the substrate and crossing each other so as to define a pixel area, a pixel electrode formed in the pixel area, a TFT formed in the pixel area, a common electrode formed on the substrate and extending parallel to the data line. The common electrode is not formed in the central portion of a pixel area, thus improving the aperture ratio.

Abstract: The present invention discloses a thin film transistor array substrate, a method for manufacturing the array substrate, and a liquid crystal display. The present invention further discloses a liquid crystal display having a reflective area and a transmissive area, which the image quality can be enhanced with. The present invention also discloses a liquid crystal display that has a liquid crystal layer whose thickness is depends on position.

Abstract: In a liquid crystal display device which performs image display by controlling a liquid crystal layer by a lateral electric field that is parallel with a substrate, the lateral electric field is formed by a black matrix and a pixel electrode. That is, a common electrode and a black matrix are commonized which are separately provided conventionally. Further, a storage capacitor is formed in an area where the black matrix and a pixel line coextend with a third interlayer insulating film interposed in between. Since the storage capacitor is formed by using all the area where a thin-film transistor is covered with the black matrix, sufficient capacitance can be secured even if the widths of electrodes and wiring lines are reduced in the future.

Abstract: A transflective liquid crystal display device has improved light efficiency. A method of fabricating a transflective liquid crystal display device including a thin film transistor substrate having a transmissive region and a reflective region, includes forming a retardation layer on a lower surface of the thin film transistor substrate, aligning a mask having a reflective region pattern on the lower surface of the thin film transistor substrate, and forming a light efficiency enhancer by selectively removing the retardation layer by irradiating a laser onto the lower surface of the thin film transistor substrate through the mask.

Abstract: A TFT LCD array substrate and manufacturing method thereof are provided. In the TFT LCD array substrate, a part of the drain electrode of the thin film transistor that is connected with the pixel electrode is overlapped with the common electrode that is formed to increase the storage capacity for the respective pixel area. The TFT LCD of the present invention increases the aperture ratio of the pixel area.

Abstract: A method for fabricating a liquid crystal display (LCD) device comprises forming an active pattern and a data line on a substrate, the active pattern including a source, a drain, and a channel regions; a first insulation film on a portion of the substrate; forming a gate electrode in a portion of the active pattern where the first insulation film is formed; a second insulation film on the substrate; forming a plurality of first contact holes exposing a portion of the source and drain regions and a second contact hole exposing a portion of the data line; forming a source electrode from a transparent conductive material connected to a source region within the respective first contact hole and a data line within the second contact hole; and forming a pixel and a drain electrodes from the transparent conductive material connected to a drain region within the respective first contact hole.

Abstract: A liquid crystal display panel and a manufacturing method thereof are provided. The liquid crystal display panel comprises a color filter substrate and a thin film transistor array substrate arranged in parallel and a liquid crystal layer between the substrates. In addition, several spacers are disposed on a black matrix of the color filter substrate. These spacers lean on the edge of at least one of the gate layer lines and source layer lines on the thin film transistor array substrate. The invention increases the bonding stability between the color filter substrate and the thin film transistor array substrate so that the reliability and display quality of the liquid crystal display panel is improved.

Abstract: Provided is a display including pixels (PX) arrayed in a matrix form and video signal lines (DL) arranged correspondently with columns which the pixels (PX) form, wherein each pixel (PX) includes a display element (OLED) and a pixel circuit including a drive transistor (DR) whose source is connected to a first power supply terminal (ND1) and whose drain is connected to the display element (OLED), and wherein a periodic variation in a property of the drive transistor (DR) appears in a row which the pixels (PX) form.

Abstract: An array substrate for an organic thin film transistor liquid crystal display device includes a substrate; a data line on the substrate; a first gate line crossing the data line to define a pixel region; an organic thin film transistor electrically connected to the first gate line and the data line, the organic thin film transistor including source and drain electrodes, an organic semiconductor layer on the source and drain electrodes, a gate electrode on the organic semiconductor layer; a pixel electrode in the pixel region and connected to the drain electrode; a gate pad terminal electrically connected to the first gate line and formed of a transparent conductive material; a data pad terminal electrically connected to the data line and formed of a transparent conductive material; and a passivation layer covering the organic thin film transistor and exposing the pixel electrode, the gate pad terminal, and the data pad terminal.

Abstract: A semi-transmissive type liquid-crystal display device suppresses the reduction and corrosion of the transmission or common electrode due to the cell corrosion reaction with a simple method. In each pixel region, the reflection electrode is formed over the glass plate, where the interlayer insulating film and the barrier metal film intervene between them. The reflection electrode is electrically connected to the transmission electrode by way of the barrier metal film. The transmission electrode and the corresponding scanning line thereto are apart from each other at a distance of 2 ?m (preferably, 3 ?m) or greater. A developer solution penetrating through the crack formed in the barrier metal film does not reach the transmission electrode (or common electrode), preventing the reduction and corrosion of the transmission or common electrode.

Abstract: Disclosed is a method for manufacturing an array substrate utilizing a laser ablation process. With the laser ablation process, a photoresist layer is removed along with the transparent conductive layer therefrom, while maintaining other portions of the transparent conductive layer. Moreover, the laser ablation process of the invention does not need additional photo-mask, so the fabrication cost can be reduced.

Abstract: An array substrate for a liquid crystal display device includes gate and data lines crossing on a substrate, common lines parallel to and between the gate lines, thin film transistors at crossing portions of the gate and data lines, and a pixel electrode. The common lines define pixel regions, which are each divided into first and second regions by the corresponding gate line. The thin film transistors each include a gate electrode in a first direction, a semiconductor layer on the gate electrode, and source and drain electrodes on the semiconductor layer in a second direction. The source and drain electrodes cross the gate electrode in each of the first and second regions. The pixel electrode is connected to the drain electrode.

Abstract: A method for manufacturing a pixel electrode contact structure of a thin-film transistors liquid crystal display is disclosed. First, a transparent substrate having a first insulating layer thereon is provided. Afterward, a first metal layer and a second metal layer are sequentially formed on the substrate and then be patterned by a halftone technology and an etching process, wherein the second metal layer is removed within the pixel electrode contact area. In the meantime, the drain lines of the thin-film transistor comprising the first metal layer and the second metal layer are formed. Next, a patterned passivation layer is formed on the substrate. Finally, a pixel electrode layer directly connecting the first metal layers within the pixel electrode contact structure is formed on the substrate. This invention provides the pixel electrode contact structure with low contact resistance and prevents the current leakage from the drain line to the storage capacitor.

Abstract: An active matrix type display device, wherein a pixel circuit is formed using a plurality of thin film transistors in which thin semiconductor films forming channel regions of the thin film transistors are made in different crystal states.

Abstract: A thin film transistor array substrate includes a polysilicon layer having a predetermined pattern shape formed over a substrate, a first gate insulating film provided over the substrate and on the surface of the polysilicon layer and having a same polished surface as the surface of the polysilicon layer and a second gate insulating film formed to cover the polysilicon layer and the first gate insulating film.

Abstract: The present invention provides a display panel of a flat panel display device of a four-color structure in which color mixture may not occur in a white sub-pixel and a method for fabricating the same. The display device includes first, second, third, and fourth sub-pixels, and each sub-pixel includes a thin film transistor. A color filter is formed adjacent to the thin film transistor of each of the first, second, and third sub-pixels, a planarization layer is formed on the color filters, and a pixel electrode is connected to each thin film transistor.

Abstract: A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.

Abstract: A thin film transistor array substrate according to an embodiment of the present invention includes: a semiconductor layer including a source region having a first conductivity type, a drain region having the first conductivity type, and a channel region between the source region and the drain region, and formed over a substrate; and a gate electrode opposite to the channel region with a gate insulating film interposed therebetween. The channel region contains an impurity of a second conductivity type doped with a predetermined distribution in a film thickness direction, and the impurity of the second conductivity type has a peak concentration point around an interface between the channel region and the insulating substrate or on the insulating substrate side.

Abstract: A four-mask process and a three-mask process proposal are constructed for a TN-type liquid crystal display device and an IPS-type liquid crystal device in which the formation of a passivation insulating layer is not required by streamlining the formation of a scan line and a pseudo-pixel element, both comprising a laminate made of a transparent conductive layer and a metal layer, at the same time and the formation of the transparent conductive pixel electrode by removing the metal layer on the pseudo-pixel electrode at the time of the formation of the opening in the gate insulating layer, by streamlining the treatment of the formation process of the contact and the formation process of the protective insulating layer using one photomask due to the introduction of half-tone exposure technology, and the formation of source-drain wires for etch-stop type insulating gate-type transistor using a photosensitive organic insulating layer and leaving the photosensitive organic insulating layer unchanged on source-drai

Abstract: A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.

Abstract: A display apparatus includes a first substrate, a gate line formed on the first substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line formed on the semiconductor layer and including a source electrode, a drain electrode facing the source electrode, a first electrode electrically connected to the drain electrode, in a second substrate facing the first substrate, a second electrode formed on the second substrate, and a liquid crystal layer disposed between the first electrode and the second electrode. At least one of the first and second electrodes includes a plurality of line patterns to polarize incident light.

Abstract: A thin film transistor array substrate structure. The array substrate structure includes a thin film transistor array substrate, an organic material layer formed thereon, and a plurality of black matrices and color filter patterns disposed on the organic material layer. The invention also provides a method of fabricating the thin film transistor array substrate.

Abstract: A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switched from the fluorine-based gas to a chlorine-based gas at a point of time when a lower oxide film as an underlying film of the semiconductor film is exposed. As the fluorine-based gas, a mixed gas of CF4 and O2 is used, and suitably, a gas ratio of CF4 and O2 in the mixture gas is set at 1:1, and the dry etching is performed therefor. By this etching, a side face of a two-layer structure of the semiconductor film and upper oxide film is optimally tapered, and a crack or a disconnection is prevented from being occurring in a film crossing over the two-layer structure.

Abstract: A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin film transistor substrate having a display area and a non-display area where is located at the exterior of the display area, a gate pattern, which is comprised of a gate line which is formed at a display area, a gate electrode which is connected to a gate line, a gate link which is formed at a non-display area, and a lower gate pad electrode which is connected, via a gate link, to a gate line, is formed.

Abstract: Disclosed is an integrated circuit with multiple semiconductor fins having different widths and variable spacing on the same substrate. The method of forming the circuit incorporates a sidewall image transfer process using different types of mandrels. Fin thickness and fin-to-fin spacing are controlled by an oxidation process used to form oxide sidewalls on the mandrels, and more particularly, by the processing time and the use of intrinsic, oxidation-enhancing and/or oxidation-inhibiting mandrels. Fin thickness is also controlled by using sidewalls spacers combined with or instead of the oxide sidewalls. Specifically, images of the oxide sidewalls alone, images of sidewall spacers alone, and/or combined images of sidewall spacers and oxide sidewalls are transferred into a semiconductor layer to form the fins. The fins with different thicknesses and variable spacing can be used to form a single multiple-fin FET or, alternatively, various single-fin and/or multiple-fin FETs.

Abstract: A method of manufacturing a thin-film electronic device comprising providing a dielectric layer on a base, providing a first electrically conductive layer having a first opening and covering at least part of the dielectric layer; and forming a first through-hole extending through the base and communicating with the first opening. A second electrically conductive layer may be provided on the base, and a dielectric layer may be provided so as to cover at least part of this second conductive layer.

Abstract: In forming a layer of a semiconductor wafer, a dielectric layer is deposited on the semiconductor wafer. The dielectric layer includes material having a low dielectric constant. Recessed and non-recessed areas are formed in the dielectric layer. A metal layer is deposited on the dielectric layer to fill the recessed areas and cover the non-recessed areas. The metal layer is then electropolished to remove the metal layer covering the non-recessed areas while maintaining the metal layer in the recessed areas.