Abstract: According to an embodiment, there is provided a fabricating method for a thin film transistor substrate divided into a display area displaying images and a non-display area beside the display area, the fabricating method comprising: forming a gate wire in the display area, a common voltage line for a MPS (mass production system) test in the non-display area, and a grounding line for the MPS test in the non-display area with same material at the same time; forming a gate insulating layer covering the gate wire and a first insulating layer covering the common voltage line for the MPS test and the grounding line for the MPS test with same material at the same time; forming a data wire crossing the gate wire and defining a pixel area in the display area; and forming a pixel electrode in the pixel area and an electrode layer on the first insulating layer corresponding to the common voltage line for the MPS test and the grounding line for the MPS test with same material at the same time.

Abstract: A pixel architecture for compensating for distortions in a flexible substrate of a flexible display, including: a first layer including a thin film transistor (TFT) on a flexible substrate; a second layer disposed above said first layer including a pixel electrode coupled to said TFT for receiving a signal from said TFT; and a third layer including a colour filter for filtering light displayed by said pixel, wherein said third layer is aligned to said second layer such that said colour filter is substantially aligned to said pixel electrode, said alignment compensating for distortions in said first layer caused by distortions in said flexible substrate.

Abstract: An LCD device and a manufacturing method thereof having improved transmittance and contrast ratio are disclosed. According to the LCD device and the manufacturing method thereof, a first common electrode which includes first and second horizontal electrode bars and a plurality of first vertical common electrode bars is disposed on a layer different from a second common electrode which includes a third horizontal common electrode bar and a plurality of second vertical common electrode bars. A pixel electrode which includes a horizontal pixel electrode bar and a plurality of vertical pixel electrode bars is disposed on the same layer as the second common electrode. The second common electrode is connected to the first common electrode.

Abstract: An LCD is manufactured to provide a wide viewing angle device and may reduce manufacturing costs according to an embodiment. The LCD includes a substrate, a gate line disposed on the substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line contacting the semiconductor layer, a drain electrode contacting the semiconductor layer and separated from the data line, a pixel electrode contacting the drain electrode, a passivation layer disposed on the pixel electrode, and a common electrode disposed on the passivation layer and including a branch electrode overlapping the pixel electrode. In one embodiment, the pixel electrode contacts an end portion of a thin film transistor. The LCD manufacturing process may be shortened and may save manufacturing costs because the LCD process need not make contact holes to connect the pixel electrode and the TFT.

Abstract: An array substrate includes; a thin-film transistor layer including; a gate line, a data line disposed substantially perpendicular to the gate line, and a switching element connected to the gate line and the data line, a gate insulation layer disposed on the gate line, a passivation layer disposed on the thin-film transistor layer, a shielding electrode disposed on the passivation layer, an insulation layer disposed on the shielding electrode; and a pixel electrode including a micro-slit pattern, the pixel electrode being disposed on the insulation layer and electrically connected to the switching element, wherein the shielding electrode is vertically aligned with the data line and the shielding electrode blocks an electromagnetic fringe field of the data line from effecting the pixel electrode.

Abstract: A flat panel display includes a first substrate, a thin film transistor formed on the first substrate, a second substrate facing the first substrate, and a light controller formed on the second substrate, wherein the light controller is electrically connected to the thin film transistor, wherein the light controller includes an opening plate having a plurality of first openings and a light blocker moving horizontally with respect to the opening plate to selectively pass light through the first openings.

Abstract: Provided is a method of fabricating a liquid crystal display device. The method includes fabricating a liquid crystal panel divided into transmission and non-transmission regions, and including an upper substrate and a lower substrate, which are spaced apart from and opposite to each other, and a liquid crystal layer filled between the substrates, wherein the lower substrate has a plurality of thin film transistors; depositing a transparent conductive layer having a certain thickness on the upper substrate exposed to the exterior of the liquid crystal panel; and performing an etching process for removing the entire transparent conductive layer and a portion of the upper substrate to form irregular prominences and depressions on a surface of the upper substrate exposed to the exterior. Therefore, it is possible to improve readability and contrast ratio by diffusely reflecting external light and scattering internal light.

Abstract: A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio, of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric l

Abstract: A thin-film transistor (“TFT”) substrate includes an insulating substrate, a gate line and a data line which are insulated from each other, disposed on the insulating substrate and are arranged in a lattice, and a pixel electrode which is electrically connected to the gate line and the data line by a switching device. The data line includes a lower layer which is formed of a transparent electrode, and an upper layer which is disposed directly on the lower layer.

Abstract: The present invention relates to an array substrate of an LCD with a wide viewing angle and a method for manufacturing the same. The array substrate includes: gate lines and data lines formed on a substrate, and TFTs and pixel electrodes formed in pixel areas defined by the gate lines and the data lines, wherein at least one shaft for inducing liquid crystal to form a multi-domain structure is formed on each of the pixel electrodes. The method includes: forming a pattern containing gate lines, gate electrodes, data lines, source electrodes, drain electrodes and TFT channels on a substrate; depositing a passivation layer, opening a first via hole for connecting each of the drain electrodes to each of pixel electrodes and a second via hole for forming a shaft; and depositing a transparent conductive film, forming a pattern containing the pixel electrodes within pixel areas, and forming a shaft at the second via hole for inducing liquid crystal to form a multi-domain structure.

Abstract: A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.

Abstract: A thin film transistor array comprising a substrate, a plurality of scan lines, a plurality of data lines, a plurality of thin film transistors, a plurality of common lines, a plurality of top electrodes, a plurality of connection lines and a plurality of pixel electrodes is provided. Wherein, each thin film transistor is disposed in one of the pixel areas and driven through the corresponding scan line and data line. Each thin film transistor includes a gate, a source and a drain. The drain of the thin film transistor is electrically connected to the corresponding top electrode by the corresponding connection line. Besides, the drain of the thin film transistor is electrically connected to the pixel electrode, and a portion of the connection line is not covered by the pixel electrode.

Abstract: An array substrate for a liquid crystal display device includes: a substrate; a gate electrode and a gate line on the substrate; a gate insulating layer on the gate electrode and the gate line; an active layer on the gate insulating layer; an ohmic contact layer on the active layer; source and drain electrodes and a data line on the ohmic contact layer, the source and drain electrodes and the data line having a multiple metal layer; a passivation layer on the source and drain electrodes and the data line; and a pixel electrode on the passivation layer.

Abstract: In a display substrate and a method of the display substrate, a bank pattern provided with openings formed therethrough is formed by an imprint method, and the openings are filled with a conductive material by an inkjet method to form a data line and a pixel electrode, in accordance with one or more embodiments. When the display substrate is manufactured, a patterning process by a photolithography method may be replaced with the patterning process by the imprint method and the inkjet method, which simplifies a manufacturing method of the display substrate. In case that the display substrate includes a plastic substrate, the plastic substrate may be prevented from being deformed during a photolithography process.

Abstract: In a method for manufacturing a display device having a light emitting element, a first base insulating film, a second base insulating film, a semiconductor layer, and a gate insulating film are formed in this order over a substrate. A gate electrode is formed over the gate insulating film to overlap with at least a part of the semiconductor layer, and a portion to be a pixel portion of the gate insulating film and the second base insulating film is doped with at least one conductive type impurities. An opening portion is formed by selectively etching the gate insulating film and second base insulating film that are each doped with impurities. The first base insulating film is exposed in a bottom face of the opening portion. Subsequently, an insulating film is formed to cover the opening portion, the gate insulating film, and the gate electrode, and a light emitting element is formed over the insulating film to overlap with at least a part of the opening portion.

Abstract: The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.

Abstract: The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.

Abstract: A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.

Abstract: Transflective-type and reflection type liquid crystal display devices having a high image quality are provided with a good production efficiency. A liquid crystal display device according to the present invention is a liquid crystal display device which includes; a first substrate and a second substrate between which liquid crystal is interposed; a first electrode and a second electrode formed on the first substrate for applying a voltage for controlling an orientation of the liquid crystal; a transistor having an electrode which is electrically connected to the first electrode; a metal layer being formed on the first substrate and including a protrusion, a recess, or an aperture; and a reflective layer formed above the metal layer on the first substrate for reflecting incident light toward a display surface. The metal layer is made of a same material as that of a gate electrode of the transistor.

Abstract: Disclosed is a color display device containing plural pixels on a substrate, each pixel is composed of plural sub-pixels which emit lights different in wavelength in the visible range and a white sub-pixel, the plural sub-pixels and the white sub-pixel each have a white organic electroluminescence layer interposed between an optically semitransparent reflection layer and a light reflection layer, the optical distance between the optically semitransparent reflection layer and the light reflection layer in each of the plural sub-pixels forms a resonator having a distance for resonating emitted light, and the optical distance between the optically semitransparent reflection layer and the light reflection layer in the white sub-pixel is longer than the maximum optical distance between the optically semitransparent reflection layer and the light reflection layer in each of the plural sub-pixels.

Abstract: A thin film transistor display panel includes an insulating substrate, gate lines and data lines disposed intersecting each other on the insulating substrate so as to be electrically insulated from each other, common lines provided on the insulating substrate in parallel to the gate lines, a gate insulating film disposed on the gate lines and the common lines, contact holes disposed passing through the gate insulating film disposed on the common lines, a plurality of common electrodes electrically connected to the common lines through the contact holes and arranged in parallel to each other, and a plurality of pixel electrodes arranged in parallel to the common electrodes. The thickness of the common electrode and the pixel electrode is smaller than that of the data line.

Abstract: A liquid crystal display (LCD) device includes a first substrate, gate lines formed on the first substrate, data lines perpendicularly crossing the gate lines to define red, green, and blue (R/G/B) sub-pixels, thin film transistors (TFTs) disposed at each intersection where the gate lines cross the data lines, common lines disposed in parallel with the gate lines, the common lines including a common line capacitance (Cdc) control portion, pixel electrodes insulated from the common lines and connected to the TFTs, a second substrate opposite to the first substrate and bonded to the first substrate, and a liquid crystal layer disposed between the first and second substrates.

Abstract: A gate driving circuit having improved driving capability and maintaining reliability even after a prolonged period of use includes a shift register having a plurality of stages cascaded to one another, each of the plurality of stages including a pull-up unit, a pull-down unit, a discharging unit, and a holding unit, wherein at least one of the discharging unit and the holding unit includes an amorphous silicon thin film transistor and a polysilicon thin film transistor connected in parallel to each other.

Abstract: An in-plane switching mode liquid crystal display (LCD) device, which reduces loss in transmittance and improves reflectance, and a method for fabricating the same are disclosed. The in-plane switching mode LCD device includes gate and data lines orthogonally crossing each other on a first substrate to define pixel regions having reflection portions and transmission portions; thin film transistors formed at the crossing of the gate and data lines; common electrodes formed at the transmission portions of the pixel regions; reflection electrodes formed at the reflection portions of the pixel regions; pixel electrodes formed parallel with the common electrodes at the transmission portions and formed above the reflection electrodes at the reflection portions; a second substrate facing and attached to the first substrate; a liquid crystal layer interposed between the first and second substrates; and first and second polarizing films respectively attached to outer surfaces of the first and second substrates.

Abstract: A TFT array panel includes an insulating substrate, a gate line and a storage electrode line formed thereon. The gate line and the storage electrode line are covered with a gate insulating layer, and a semiconductor island is formed on the gate insulating layer. A pair of ohmic contacts are formed on the semiconductor island, and a data line and a drain electrode are formed thereon. The data line and the drain electrode are covered with a passivation layer having a contact hole exposing the drain electrode. A pixel electrode is formed on the passivation layer and connected to the drain electrode through the contact hole. The TFT array panel is covered with an alignment layer rubbed approximately in a direction from the upper left corner to the lower right corner of the TFT array panel or the pixel electrodes. The pixel electrode has approximately a rectangular shape and overlaps the gate line and the data line.

Abstract: A liquid crystal display device, including: first and second substrates; a gate line on the first substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel electrode formed of a transparent conductive film in a pixel hole passing through the gate insulating film in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode; and wherein the drain electrode protrudes from the semiconductor layer toward inside of the pixel electrode to be connected to the pixel electrode.

Abstract: A simplified method for forming a pad electrode without using an additional light-irradiation device is disclosed. The method includes forming a gate pad on a substrate, forming a gate insulating layer on a substrate surface, forming a data pad on the gate insulating layer, forming a passivation layer on the substrate surface, forming a first contact hole in the gate insulating layer and the passivation layer, forming a second contact hole in the passivation layer, coating a conductive photoresist on the substrate surface, and forming a gate pad electrode in the first contact hole and a data pad electrode in the second contact hole by ashing the conductive photoresist. The pad electrode is formed in a simple method of ashing the conductive photoresist, thereby decreasing costs.

Abstract: A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.

Abstract: It is possible to decrease block segmentation and flickering due to separate exposure in an active matrix substrate while avoiding decreased aperture ratio, increased parasitic capacity and complication in manufacturing process. A first pixel circuit and a second pixel circuit including a first-type TFT and a second-type TFT, respectively, are disposed alternately relative to each other in both directions of row and column in an active matrix substrate. In the first-type and the second-type TFTs, a pattern misalignment of the drain electrode with respect to the gate electrode in an up-down direction will increase/decrease a gate-drain parasitic capacity Cgd in reverse ways. By disposing these two types of TFTs in uniform dispersion, the increase/decrease in the parasitic capacity Cgd caused by pattern misalignment occurring at the time of manufacture are averaged.

Abstract: A display device includes; a first substrate, a second substrate disposed substantially opposite to the first substrate, a third substrate disposed between the first substrate and the second substrate, a color display layer disposed between the first substrate and the third substrate, the color display layer comprising a cholesteric liquid crystal, a first electrode and a second electrode electrically connected to the color display layer, a color conversion layer disposed between the third substrate and the second substrate, and a third electrode and a fourth electrode electrically connected to the color conversion layer.

Abstract: A TFT array substrate is disclosed. In the pixel structure of the TFT array substrate, patterned transparent conductive layers are disposed under a first metal layer (M1) and a second metal layer (M2) and most areas of the M1 and M2 are substituted by the patterned transparent conductive layers. So, the pixel structure has high aperture ratio and large storage capacitance. Besides, a scan bonding pad on the TFT array substrate includes a first patterned transparent conductive layer (T1), the M1 and a third patterned transparent conductive layer (T3). The M1 is disposed on the T1, and the T3 is electrically connected to the T1 via a contact hole in the M1. So, the contact resistance of the scan bonding pad is small. The data bonding pad on the TFT array substrate has similar design. Moreover, fabricating methods of TFT array substrates are also provided.

Abstract: A method of manufacturing a liquid crystal display device includes forming a gate line and a gate electrode on a substrate, forming a gate insulating layer on substantially an entire surface of the substrate, forming an active layer, an ohmic contact layer, a source electrode, a drain electrode and a data line on the gate insulating layer, forming a black matrix on the first passivation layer, forming a color filter layer on the first passivation layer in the pixel region, forming a second passivation layer on substantially an entire surface of the substrate, forming a photoresist pattern to expose the second passivation layer, removing the exposed second passivation and removing a portion of the first passivation layer contacting the second passivation layer, forming a transparent conductive layer on substantially an entire surface of the substrate, and forming a pixel electrode in the pixel region by removing the photoresist pattern and the transparent conductive layer on the photoresist pattern.

Abstract: A thin film transistor array panel includes an insulating substrate, a gate line and a data line disposed on the insulating substrate and insulated from and intersecting each other, a thin film transistor connected to the gate line and the data line, a partition disposed corresponding to the gate line and the data line and defining a color filter filling region, a color filter disposed in the filling region, a passivation layer disposed on the color filter and the partition, and a pixel electrode disposed on the passivation layer and connected to the thin film transistor through a contact hole disposed through the passivation layer and the color filter. A plane shape of the color filter filling region is substantially a rectangle.

Abstract: An array substrate of an in-plane switching liquid crystal display device includes, among other features, a gate electrode and a gate line having a first double-layered structure consisting of a first barrier layer and a first low resistance metallic layer; a data line defining a pixel region with the gate line, the data line having a second double-layered structure consisting of a second barrier layer and a second low resistance metallic layer; a plurality of common electrodes disposed in a direction opposite to an adjacent gate line; a thin film transistor (TFT) near a crossing of the gate and data lines, each of the source and drain electrodes of the TFT having the same double-layered structure as the data line; and a plurality of pixel electrodes arranged in an alternating pattern with the common electrodes and disposed in the direction opposite the adjacent gate line.

Abstract: An array substrate for a transflective liquid crystal display device and its fabrication method are discussed. In one embodiment, an array substrate for a transflective liquid crystal display device includes a gate pad on a base substrate, a gate insulator on the gate pad and having an opening exposing a portion of the gate pad, an auxiliary pad pattern on the gate insulator and made of an intrinsic amorphous silicon layer, and a conductive layer on the auxiliary pad pattern and contacting the gate pad through the opening.

Abstract: A through hole P of this infrared sensor is formed in a position opposed to an adhesive layer AD. The through hole P, the bottom part thereof and an insulating film Pi formed therein is restrained from being deteriorated and damaged, in order to improve the characteristics of the infrared sensor, since the through hole P and the bottom part thereof are supported by the adhesive layer AD even when a pressure difference is generated between the inside and the outside in the space partitioned by the adhesive layer AD.

Abstract: An array substrate for an in-plane switching mode liquid crystal display device includes a gate line on a substrate, a gate insulating layer on the gate line, first and second data lines on the gate insulating layer and crossing the gate line to define a pixel region, a first extending portion on the gate insulating layer and extending from the second data line, a thin film transistor connected to the gate line and the first data line, a passivation layer on the first and second data lines and the thin film transistor, the passivation layer having a first contact hole exposing a drain electrode of the thin film transistor, a first pattern in the pixel region on the passivation layer, the first pattern connected to the drain electrode through the first contact hole and overlapping the first extending portion, a plurality of first electrodes extending from the first pattern, the plurality of first electrodes parallel to the first and second data lines, a second pattern in the pixel region on the passivation lay

Abstract: The present invention relates to a display device and a manufacturing method thereof. The display device includes a substrate, a first conductor disposed on the substrate, a first insulating layer disposed on the first conductor, a second insulating layer disposed on the first insulating layer, a semiconductor disposed on the second insulating layer, and a second conductor disposed on the semiconductor. A thickness of the first insulating layer is greater than a thickness of the first conductor, and the first insulating layer includes a first opening exposing the first conductor.

Abstract: A pixel structure includes a substrate, a floating light-shielding pattern disposed on the substrate, an insulating layer disposed on the substrate and the light-shielding pattern, a data line disposed over and corresponding to the light-shielding pattern, a dielectric layer disposed on the data line and the insulating layer, and a third layer conductive pattern disposed on the dielectric layer. The third layer conductive pattern includes a common line and a common pattern. The common pattern includes two common branches arranged in parallel, and there is a space between the two common branches and over the data line.

Abstract: A display device which can ensure the correction of a black spot, for example, in forming an opening portion in a portion of a scanning signal line where the scanning signal line intersects a video signal line and forming a semiconductor layer and a conductor layer by a resist reflow method is provided. A conductor layer includes a video signal line, a drain electrode, a source electrode, and a connecting line. A semiconductor layer is formed so as to cover at least a region of the insulation film which is larger than a region where the video signal line and the connecting line are formed. The connecting line is connected with the video signal line over an opening portion which is formed in the scanning signal line. A cutout portion, a projecting portion or an enlarged-width portion is formed on the video signal line and/or the connecting line in a region which corresponds to the opening portion or in the vicinity of the region.

Abstract: An active device array substrate is provided. The active device array substrate includes a plurality of pixel units. Each of the pixel units includes a first active device, a first scan line, a second active device, a second scan line, a data line, a common line, and a pixel electrode. The first scan line is electrically connected to a first gate of the first active device. The second scan line is electrically connected to a second gate of the second active device. The data line is electrically connected to a first source of the first active device. The common line is electrically connected to a second source of the second active device. The pixel electrode is electrically connected to a first drain of the first active device and a second drain of the second active device.

Abstract: A thin film transistor and a method of fabricating the same are disclosed. The method includes: sequentially depositing an amorphous silicon layer, a capping layer, and a metal catalyst layer; annealing the entire layer to crystallize the amorphous silicon layer into a polysilicon layer; removing the capping layer; and, when the capping layer is perfectly removed to make a contact angle of the polysilicon layer within a range of about 40 to about 80°, forming a semiconductor layer using the polysilicon layer.

Abstract: A display substrate includes a base substrate, a signal line, a thin-film transistor (“TFT”), a pixel electrode, a color filter and a light-blocking part. The signal line and the TFT are formed on the base substrate. The TFT is electrically connected to the signal line. The pixel electrode is formed in a unit pixel area of the base substrate and is electrically connected to the TFT. The color filter is formed in the unit pixel area. The light-blocking part includes an organic pattern formed on the base substrate and a light-blocking pattern formed on the organic pattern. The organic pattern covers the TFT and is formed along a longitudinal axis of the signal line to define at least a portion of a periphery of the color filter. A size and a shape of the light-blocking pattern are substantially the same as a size and a shape of the organic pattern.

Abstract: A liquid crystal display device 10 includes: a transparent substrate 11; a plurality of signal lines 17 and scan lines 16 arranged on the transparent substrate 11 in a matrix; a plurality of auxiliary capacitor lines 18 provided between the scan lines 16 so as to be in parallel with the scan lines 16; thin film transistors (TFTs) each provided in a vicinity of an intersection of the signal lines 17 and scan lines 16; and pixel electrodes 20 arranged in respective positions defined by the signal lines 17 and the scan lines 16 and each electrically connected to a drain electrode D of the thin film transistor (TFT); in which the thin film transistor (TFT)'s gate electrode G and the scan line 16 are covered by a gate insulating film formed by an insulating film (a first layer) 25 and an insulating layer (a second layer) 26, and the drain electrode D of the thin film transistor (TFT) extends to overlie an auxiliary capacitor electrode 18a, with the insulating layer (the second layer) 26 interposed between the drai

Abstract: The TFT substrate having a transparent conductive film pattern configuring a terminal that can be connected from outside and a first line extending from the terminal; a metal film that is removed from over the terminal and formed on the transparent conductive film pattern on the inside thereof; and an insulating film covering the metal film.

Abstract: A method of producing a display device includes the steps of forming gate electrodes on a substrate so that an arrangement of a source and a drain, in a pixel row direction, of a thin-film transistor formed in each of pixels on the substrate is reversed every pixel row; forming a gate insulating film and an amorphous semiconductor thin film on the substrate in that order so as to cover the gate electrodes; crystallizing the semiconductor thin film by irradiating the semiconductor thin film with an energy beam so that a scanning direction of the energy beam is the same with respect to the arrangement of the source and the drain in the pixel row direction; and forming a light-emitting element connected to the thin-film transistor.

Abstract: In a pixel portion, a scan signal line and an auxiliary capacitor line are formed using a second conductive film, and a data signal line is formed using a first conductive film. In a TFT portion, a gate electrode is formed using the first conductive film and electrically connected to the scan signal line formed using the second conductive film through an opening in a gate insulating film. Further, a source electrode and a drain electrode are formed using the second conductive film. In the auxiliary capacitor portion, the auxiliary capacitor line formed using the second conductive film serves as a lower electrode, the pixel electrode serves as an upper electrode, and the passivation film used as a dielectric film is interposed between the capacitor electrodes.

Abstract: A method of manufacturing an active matrix substrate is presented. The method includes forming a transistor having a gate line, a semiconductor layer, an insulating layer between the gate line and the semiconductor layer, a source electrode, and a drain electrode; forming a pixel electrode comprising a first sub-pixel electrode and a second sub-pixel electrode; forming an auxiliary coupling electrode connected to the second sub-pixel electrode through a first contact hole; and forming the first sub-pixel electrode through a second contact hole connected to the drain electrode of the transistor. The auxiliary coupling electrode and the first sub-pixel electrode overlap each other such that the second sub-pixel electrode is capacitively coupled to the first sub-pixel electrode and the auxiliary coupling electrode and the electrode part form a capacitor.

Abstract: A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

Abstract: Disclosed is a liquid crystal display (LCD) device having gate and data driving elements with improved heat dissipation properties. The driving elements each have the following: a source and a drain electrode, each with contact holes that provide electrical contact with an active area formed on the driving element's substrate; multiple separate channels between the source and the drain; and a gate electrode formed crossing the multiple channels. Also formed are dummy contact holes that allow the metal of the electrodes to penetrate to a layer below the active layer without contacting it. The dummy contact hole provides a thermally conductive channel whereby heat that would otherwise build up in the channels, and degrade the performance of the driving element, is conducted through the dummy contact hole and radiated away by the electrode metal.