Abstract: In a semiconductor laser drive device, a wiring inductance in electrically connecting a semiconductor laser and a laser driver is reduced. The semiconductor laser drive device includes a substrate, the laser driver, and the semiconductor laser. The laser driver is built in the substrate. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser drive device. Connection wiring electrically connects the laser driver and the semiconductor laser by a wiring inductance of 0.5 nanohenries or less.

Abstract: Disclosed is a semiconductor package comprising a semiconductor chip and a redistribution layer. The semiconductor chip includes a semiconductor substrate, a passivation layer, and first power, second power, and signal pads exposed from the passivation layer. The redistribution layer includes a photosensitive dielectric layer, and first to third redistribution patterns and a high-k dielectric pattern that are in the photosensitive dielectric layer. The first, second, and third redistribution patterns are respectively connected to the first power, second power, and signal pads. The high-k dielectric pattern is between the first and second redistribution patterns. The photosensitive dielectric layer includes a first dielectric material. The high-k dielectric pattern includes a second dielectric material whose dielectric constant greater than that of the first dielectric material. The high-k dielectric pattern is in contact with the passivation layer.

Abstract: An electronic component includes an electronic element and an interposer board. The electronic element includes a multilayer body and external electrodes at a pair of multilayer body end surfaces of the multilayer body and connected to internal electrode layers. The interposer board includes board end surfaces, board side surfaces orthogonal to the board end surfaces, and board main surfaces orthogonal to the board end surfaces and the board side surfaces. One of the pair of board main surfaces is located in a vicinity of the electronic element and joined with one of the multilayer body main surfaces in a vicinity of the interposer board. The interposer board is an alumina board. A solder layer is provided between the electronic element and the interposer board, joins the electronic element with the interposer board, and includes a solder unfilled region.

Abstract: The object of the invention is to provide a double-sided circuit non-oxide-based ceramic substrate excellent in radiation property and low in cost, and a method for manufacturing the same. A double-sided circuit non-oxide-based ceramic substrate related to the present invention includes a high heat-conductive non-oxide-based ceramic substrate that includes a through hole, a holding layer that is formed on a wall surface of the through hole, and an electro-conductive metal section that is held inside the through hole by the holding layer and does not include an active metal. The double-sided circuit non-oxide-based ceramic substrate related to the present invention preferably includes electrodes (thin film electrodes) that shield end surfaces of the holding layer and end surfaces of the electro-conductive metal section which are exposed to front and back surfaces of the ceramic substrate.

Abstract: An electronic component includes an electronic element and an interposer board. The electronic element includes a multilayer body and external electrodes at a pair of multilayer body end surfaces and connected to internal electrode layers. The interposer board includes board end surfaces, board side surfaces orthogonal to the board end surfaces, and board main surfaces orthogonal to the board end surfaces and the board side surfaces. One of the board main surfaces is in a vicinity of the electronic element and joined with one of the multilayer body main surfaces in a vicinity of the board. The interposer board is an alumina board. The board main surface in the vicinity of the electronic element includes a fired layer thereon in the vicinity of the pair of board end surfaces of the interposer board.

Abstract: A multichip module (MCM) power package includes a multilayer routable leadframe substrate (MRLF) substrate including a first and a second RLF layer. A multilayer extending via extends from the first into the second RLF layer. A first vertical FET has a side flipchip attached to a bottom side of the second RLF. A second vertical FET has a side flipchip attached to a bottom side of the second RLF layer, and contacts the multilayer extending via. A controller integrated circuit (IC) is flipchip attached a top side of the MRLF substrate at least partially over the first vertical FET. A top mold compound is on a top side of the MRLF substrate lateral to the controller IC that is lateral to a metal pad on the multilayer extending via. A bottom side of the first and second vertical FET are exposed by a bottom mold compound layer.

Abstract: In a semiconductor laser drive device, a wiring inductance in electrically connecting a semiconductor laser and a laser driver is reduced. The semiconductor laser drive device includes a substrate, the laser driver, and the semiconductor laser. The laser driver is built in the substrate. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser drive device. Connection wiring electrically connects the laser driver and the semiconductor laser by a wiring inductance of 0.5 nanohenries or less.

Abstract: A circuit assembly may include a substrate and a pattern of contact points formed from deformable conductive material supported by the substrate. The assembly may further include an electric component supported by the substrate and having terminals arranged in a pattern corresponding to the pattern of contacts points. The one or more of the terminals of the electric component may contact one or more of the corresponding contact points to form one or more electrical connections between the electric component and the contact points.

Abstract: An electronic component built-in wiring board includes a substrate having a cavity, an electronic component accommodated in the cavity of the substrate and having pads on a surface of the component, a coating insulating layer formed on the substrate such that the insulating layer is covering the component and has via holes, via conductors formed in the via holes such that the via conductors are penetrating through the insulating layer, and a resin coating formed between the component and the insulating layer and having through holes such that the through holes are partially exposing the pads in the via holes and that the coating has adhesion to the component that is stronger than adhesion of the insulating layer to the component. The via conductors are formed in the via holes and the through holes such that the via conductors are connected to the pads on the surface of the component.

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

Abstract: A device that includes a first die and a package substrate. The package substrate includes a dielectric layer, a plurality of vias formed in the dielectric layer, a first plurality of interconnects formed on a first metal layer of the package substrate, and a second plurality of interconnects formed on a second metal layer of the package substrate. The device includes a first series of first solder interconnects arranged in a first direction, the first series of first solder interconnects configured to provide a first electrical connection; a second series of first solder interconnects arranged in the first direction, the second series of first solder interconnects configured to provide a second electrical connection; a first series of second solder interconnects arranged in a second direction, the first series of second solder interconnects configured to provide the first electrical connection.

Abstract: A circuit board includes a multilayer wiring board including a first wiring board and a second wiring board. A receiving cavity penetrates the second wiring board and corresponds to at least one connecting pad of the first wiring board. The receiving cavity includes a receiving portion penetrating the second wiring board and a plurality of recessed portions. Each recessed portion penetrates the second wiring board and is recessed from an inner wall defining the receiving portion. A width of each recessed portion gradually increases from a surface of the second wiring board facing the first wiring board toward a surface of the second wiring board facing away from the first wiring board. An electronic component is received in the receiving cavity and electrically connected to the at least one connecting pad. An adhesive fills in a gap between the electronic component and the second wiring board.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.

Abstract: Semiconductor die assemblies including stacked semiconductor dies having parallel plate capacitors formed between adjacent pairs of semiconductor dies in the stack, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die and a second semiconductor die stacked over the first semiconductor die. The first semiconductor die includes an upper surface having a first capacitor plate formed thereon, and the second semiconductor die includes a lower surface facing the upper surface of the first semiconductor die and having a second capacitor plate formed thereon. A dielectric material is formed at least partially between the first and second capacitor plates. The first capacitor plate, second capacitor plate, and dielectric material together form a capacitor that stores charge locally within the stack, and that can be accessed by the first and/or second semiconductor dies.

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Abstract: Embodiments are directed to a method of embedding a discrete component in a substrate. The method includes forming a cavity in the substrate. The method further includes inserting a discrete component into the cavity, wherein the discrete component comprises a top terminal and a bottom terminal. The method further includes positioning the discrete component within the cavity such that the top terminal is above the bottom terminal and below a front face of the substrate. The method further includes forming an intermediate conductive material within the cavity and over the top terminal. The method further includes forming a top conductive material over the intermediate conductive material such that the top conductive material is electrically coupled through the intermediate conductive material to the top terminal.

Abstract: A method for contacting and rewiring an electronic component embedded in a PCB in the following manner is disclosed. A first permanent resist layer is applied to one contact side of the PCB. The first permanent resist layer is structured to produce exposures in the area of contacts of the electronic component. A second permanent resist layer is applied onto the structured first permanent resist layer. The second permanent resist layer is structured to expose the exposures in the area of the contacts and to produce exposures in line with the desired conductor tracks. The exposures are chemically coated with copper the copper is electric-plated to the exposures. Excess copper in the areas between the exposures is removed.

Abstract: A multilayer capacitor built-in substrate includes a core substrate, a multilayer capacitor mounted on one principal surface of the core substrate, and a burying layer provided on the one principal surface of the core substrate to bury the multilayer capacitor. The multilayer capacitor includes a laminated body in which dielectric layers and internal electrode layers are laminated, and first and second external electrodes. The laminated body includes an effective region in which internal electrode layers respectively connected to the first external electrode and the second external electrode are laminated with a dielectric layer located therebetween, and a non-effective region surrounding the effective region. The core substrate includes, on the one principal surface, a first land electrode electrically connected to the first external electrode and a second land electrode electrically connected to the second external electrode.

Abstract: A semiconductor device which provides improved reliability. The semiconductor device includes: a wiring substrate having a first surface and a second surface opposite to the first surface; a chip condenser built in the wiring substrate, having a first electrode and a second electrode; a first terminal and a second terminal disposed on the first surface; and a third terminal disposed on the second surface. The semiconductor device further includes: a first conduction path for coupling the first terminal and the third terminal; a second conduction path for coupling the first terminal and the first electrode; a third conduction path for coupling the third terminal and the first electrode; and a fourth conduction path for coupling the second terminal and the first electrode.

Abstract: There are provided a printed circuit board and a method to manufacture the same. The printed circuit board includes a core board including an insulating layer and a cavity, an electronic element in the cavity, and an insulating member disposed between inner surfaces of the cavity and the electronic element. A modulus of elasticity of the insulating member is lower than a modulus of elasticity of the insulating layer.

Abstract: An electronic device includes an insulating layer, a plurality of upper wiring electrode patterns formed on an upper surface of the insulating layer, and a plurality of lower wiring electrode patterns formed on a lower surface of the insulating layer. The upper wiring electrode patterns and the lower wiring electrode patterns each include an underlying electrode layer formed of a conductive paste and a plating electrode layer formed on the underlying electrode layer. With this configuration, the resistivity of the upper and lower wiring electrode patterns and can be made lower than that of the upper and lower wiring electrode patterns and each including only the underlying electrode layer formed of a conductive paste.

Abstract: A package substrate includes a dielectric layer, a conductive via disposed in the dielectric layer, and a conductive pattern layer exposed from a first surface of the dielectric layer. The conductive pattern layer includes traces and a via land, the via land extends into the conductive via, and a circumferential portion of the via land is encompassed by the conductive via. A method of making a package substrate includes forming a conductive pattern layer including traces and a via land, providing a dielectric layer to cover the conductive pattern layer, and forming a via hole. Forming the via hole is performed by removing a portion of the dielectric layer and exposing a bottom surface of the via land and at least a portion of a side surface of the via land. A conductive material is applied into the via hole to form a conductive via covering the via land.

Abstract: A circuit module includes a multilayer substrate including built-in capacitors and external components mounted on the surface of the multilayer substrate. On the surface of a dielectric layer, an auxiliary electrode is provided. The auxiliary electrode is electrically connected to a capacitor electrode via a via electrode passing through the dielectric layer. On the surface of a dielectric layer, a capacitor electrode is arranged so as to face the capacitor electrode and the auxiliary electrode connected to the capacitor electrode. The auxiliary electrode is arranged in an area in which the capacitor electrodes overlap each other as viewed from a lamination direction.

Abstract: A printed circuit board includes a power feeding layer to which a power supply voltage is applied, a plurality of power feeding terminals that is disposed in an area, in which an electronic component is mounted, and supplies current based on the power supply voltage to the electronic component, and a plurality of vias that electrically interconnects the plurality of power feeding terminals and the power feeding layer, and is formed such that a via coupled to a power feeding terminal disposed closer to an end of the area has a smaller via-diameter.

Abstract: An electronic device may be provided with wireless circuitry. The wireless circuitry may include one or more antennas. The antennas may include phased antenna arrays each of which includes multiple antenna elements. Phased antenna arrays may be mounted along edges of a housing for the electronic device, behind a dielectric window such as a dielectric logo window in the housing, in alignment with dielectric housing portions at corners of the housing, or elsewhere in the electronic device. A phased antenna array may include arrays of patch antenna elements on dielectric layers separated by a ground layer. A baseband processor may distribute wireless signals to the phased antenna arrays at intermediate frequencies over intermediate frequency signal paths. Transceiver circuits at the phased antenna arrays may include upconverters and downconverters coupled to the intermediate frequency signal paths.

Abstract: A multilayer chipset structure is provided. The chips can be arranged in a stacking structure with multilayer circuit board. Each circuit board is formed with wiring opening and chipset opening. The chipset opening can be arranged with at least one chipset, such as a controller. The different openings cause connecting wires can pass therethrough so as to connect different chips or circuit elements on different layer. By this modularized structure, the multilayer package structure can be formed with a complicated structure in one package so as to reduce the packaging cost effectively. The connecting wires pass through the openings so as to reduce the whole path lengths needed. No complicated wiring is needed. All the conducting wires are at an upper side of the chips. In packaging, it only needs to package the upper side.

Abstract: Provided is a landless multilayer circuit board and a manufacturing method thereof. The manufacturing method includes steps of forming a first circuit on a first substrate, patterning a photoresist layer to form at least one via between the first circuit and a second circuit, forming at least one connecting pillar in the at least one via, removing the photoresist layer, forming a second substrate to cover the at least one connect pillar, and forming the second circuit on the second substrate. The second circuit is connected to the first circuit through the at least one connecting pillar. When the second circuit is formed, the at least one via does not need to be filled, thereby making the second circuit flat.

Abstract: Some embodiments include a capacitive chip having a plurality of capacitive units. The individual capacitive units include alternating electrode layers and dielectric layers in a capacitor stack. The capacitor stack extends across an undulating topography. The undulating topography has peaks and valleys with the peaks being elevationally offset relative to the valleys by a distance within a range of from about 30 microns to about 100 microns. The capacitor stack includes at least about 10 total layers. Some embodiments include apparatuses and multi-chip modules having capacitor chips.

Abstract: The present invention provides a package structure with an embedded electronic component and a method of fabricating the package structure. The method includes: forming a first wiring layer on a carrier; removing the carrier and forming the first wiring layer on a bonding carrier; disposing an electronic component on the first wiring layer; forming an encapsulating layer, a second wiring layer and an insulating layer on the first wiring layer; disposing a chip on the electronic component and the second wiring layer; and forming a covering layer that covers the chip. The present invention can effectively reduce the thickness of the package structure and the electronic component without using adhesives.

Abstract: A flexible printed circuit board (FPCB) for an optical module includes: a signal via pad connected with a signal lead pin of the optical module; a ground layer spaced apart from the signal via pad; an isolation gap formed between the signal via pad and the ground layer; and a protective layer which is formed at a portion that comprises the isolation gap, and which, when connected with the signal via pad, compensates for parasitic inductance caused by a protruding signal lead pin.

Abstract: A capacitor includes: dielectric layers including a first dielectric layer, a second dielectric layer, and at least one intermediate dielectric layer laminated between the first dielectric layer and the second dielectric layer; first interlayer electrode and second interlayer electrode arranged alternately with each other between at least two layers among the dielectric layers; a first external electrode disposed on lateral surfaces of the dielectric layers and coupled to the first interlayer electrode; and a second external electrode disposed on lateral surfaces of the dielectric layers and coupled to the second interlayer electrode, wherein the intermediate dielectric layer includes first internal electrodes coupled to the first interlayer electrode, arranged in a plane direction of the intermediate dielectric layer and spaced apart from each other, and second internal electrodes coupled to the second interlayer electrode, arranged alternately with the first internal electrodes and spaced apart from the fir

Abstract: Embedding a discrete electrical device in a printed circuit board (PCB) includes: providing a vertical via as a blind hole from a horizontal surface of the PCB to an electrically conductive structure in a first layer, the first layer being one layer of a first core section of a plurality of core sections vertically arranged above each other, each core section including lower and upper conductive layers, and a non-conductive layer in between; inserting the electrical device into the via, with the device extending within at least two of the core sections; establishing a first electrical connection between a first electrical device contact device and the electrically conductive structure in the first layer; and establishing a second electrical connection between a second electrical device contact and a second layer, the second layer being one of the electrically conductive layers of a second horizontal core section.

Abstract: A wiring board includes electronic components, a multilayer core substrate including insulating layers and conductive layers such that the insulating layers include a central insulating layer in the center position of the core in the thickness direction, a first build-up layer including an insulating layer and a conductive layer such that the insulating layer has resin composition different from that of the insulating layers in the core, and a second build-up layer including an insulating layer and a conductive layer such that the insulating layer has resin composition different from that of the insulating layers in the core. The core has cavities accommodating the electronic components, respectively, and including a first cavity and a second cavity such that the first and second cavities have different lengths in the thickness direction and are penetrating through the central layer at centers of the first and second cavities in the thickness direction.

Abstract: A wiring board includes a base substrate, a semiconductor element embedded in the substrate and having active and non-active surfaces such that the semiconductor has a terminal on the active surface, a first build-up layer including an insulating layer and first conductor pads such that the first conductor pads have exposed surfaces exposed from a surface of the insulating layer on the opposite side with respect to the substrate, and a second build-up layer including an insulating layer and second conductor pads such that the second conductor pads have exposed surfaces exposed from a surface of the insulating layer on the opposite side with respect to the substrate. The insulating layer in the first build-up includes resin material and reinforcing material, the insulating layer in the second build-up includes resin material and reinforcing material, and the first conductor pads is embedded in the insulating layer in the first build-up.

Abstract: A method of making a wiring board includes forming a first capacitor carrier layer with a first embedded chip capacitor, a first insulation layer disposed on an upper surface, a second insulation layer disposed on a lower surface, first upper and lower conductive vias in conductive contact with a first electrode, and second upper and lower conductive vias in conductive contact with a second electrode. The method also includes forming a second capacitor carrier layer similar to the first. The method further includes forming a bonded laminate comprising in sequence an upper insulation layer, the first capacitor carrier layer, a center insulation layer, the second capacitor carrier layer, and a lower insulation layer. The method also includes forming a through-hole through the laminate and forming a conductive coating within the through-hole to provide a conductive through-hole. A wiring board also includes the bonded laminate and the embedded capacitors.

Abstract: The present disclosure relates to a semiconductor package and method of making the same. The semiconductor package includes an encapsulation layer, a dielectric layer, a component, and a first patterned conductive layer. The encapsulation layer has a first surface. The component is within the encapsulation layer and has a front surface and a plurality of pads on the front surface. The dielectric layer is on the first surface of the encapsulation layer, and defines a plurality of via holes; wherein the plurality of pads of the component are against the dielectric layer; and wherein the dielectric layer has a second surface opposite the first surface of the encapsulation layer. Each of plurality of via holes extends from the second surface of the dielectric layer to a respective one of the plurality of the pads. The first patterned conductive layer is within the dielectric layer and surrounds the via holes.

Abstract: Semiconductor device packages, packaging methods, and packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes a back side interconnect structure, and a winding of an inductor disposed in a material layer of the back side interconnect structure. A molding material is coupled to the back side interconnect structure. The package includes an integrated circuit die mounting region disposed within the molding material.

Abstract: A system and method of manufacture of an integrated circuit packaging system includes: a copper film; a first metal layer directly on the copper film; an insulation layer directly on and over the first metal layer, the insulation layer having a via hole through the insulation layer; a conductive via within the via hole and directly on the first metal layer; a second metal layer directly on the conductive via and the insulation layer; a copper post directly on the copper film; a solder pad over the copper post; and an interposer coupled to the copper post and the solder pad.

Abstract: A semiconductor package may include a package substrate with a top surface and a bottom surface opposite to the top surface, the top surface of the package substrate configured to have a semiconductor chip mounted thereon, a power block and a ground block in the package substrate, the power block configured as a power pathway penetrating the package substrate, and the ground block configured as a ground pathway penetrating the package substrate, first vias extended from the power block and the ground block, and the first vias electrically connected to the semiconductor chip, second vias extended from the power block and the ground block toward the bottom surface of the package substrate, and block vias to penetrate the power block and the ground block, the block vias electrically connected to the semiconductor chip and electrically separated from the power block and the ground block.

Abstract: An embedded multi-terminal capacitor embedded in a substrate cavity includes at least one metal layer patterned into a plurality of power rails and a plurality of ground rails. The substrate includes an external power network.

Abstract: A heat radiation structure for an electric device includes: at least one multi-layer substrate including a plurality of base parts made of insulation material and a conductor pattern, which are stacked in a multi-layer structure so that the conductor pattern is electrically coupled with an interlayer connection portion in the base parts; the electric device having at least one of a first electric element built in the at least one multi-layer substrate and a second electric element, which is not built in the multi-layer substrate; and a low heat resistance element opposed to the electric device. The low heat resistance element has a heat resistance lower than the insulation material.

Abstract: A method and an electrical device with superimposed layers in an alternation of conductive layers and insulating layers. A mesa-type structure is formed, leaving for at least one conductive layer, an uncovered peripheral portion accessible for connection. In this portion, an electrically insulating pattern is configured in order to mark out an electrically insulated area located in the peripheral portion of said at least one of the electrically conductive layers. Application to electrical capacitances and redistribution layers for microelectronic devices.

Abstract: A printed wiring board includes a first interlayer, a first conductive layer on first-surface side of the first interlayer, a second conductive layer on second-surface side of the first interlayer, a first buildup layer including interlayers and conductive layers and formed on first surface of the first interlayer, and a second buildup layer including interlayers and conductive layers and formed on second surface of the first interlayer. The first conductive layer is formed such that the first conductive layer is embedded in the first interlayer and exposing surface on the first surface of the first interlayer, the second conductive layer is formed on the second surface of the first interlayer, and the interlayers in the first buildup layer include a second interlayer positioned adjacent to the first conductive layer and having the greatest thickness among the first interlayer and interlayers in the first and second buildup layers.

Abstract: A method of predicting warpage of a laminate is disclosed in which in-plane copper imbalance is calculated. A method of designing an organic build-up laminate is provided in which in-plane copper imbalance is calculated and imbalances are corrected.

Abstract: An array-type multilayer ceramic electronic component includes a ceramic body including a plurality of first dielectric layers and a plurality of second dielectric layers, first and second internal electrodes disposed on the first dielectric layers and facing each other, third and fourth internal electrodes disposed on the second dielectric layers and facing each other, a first external electrode disposed on a first end surface of the ceramic body and connected to the first internal electrode, a second external electrode disposed on a first side surface of the ceramic body and connected to the second internal electrode, a third external electrode disposed on a second end surface of the ceramic body and connected to the third internal electrode, and a fourth external electrode disposed on a second side surface of the ceramic body and connected to the fourth internal electrode.

Abstract: The present disclosure relates to bonding structures useful in semiconductor packages. In an embodiment, a semiconductor device includes a semiconductor element and two pillar structures. The semiconductor element has a surface and includes at least one bonding pad disposed adjacent to the surface. The two pillar structures are disposed on the one bonding pad. The two pillar structures are symmetric and formed of a same material.

Abstract: A wiring board includes a first resin insulation layer, an electronic component positioned on first surface of the first insulation layer, a second resin insulation layer formed on the first surface of the first insulation layer such that the second insulation layer is embedding the electronic component, a conductive layer formed on the second insulation layer, a third resin insulation layer formed on the conductive layer and second insulation layer, and a connection via conductor formed in the second insulation layer such that the connection via conductor is connecting electrode of the electronic component and conductive layer on the second insulation layer. The first insulation layer has a pad structure on second surface side of the first insulation layer on opposite side of the first surface, and the first insulation layer has coefficient of thermal expansion set lower than coefficients of thermal expansion of the second and third insulation layers.

Abstract: A high frequency component includes transverse inductors each including a first end and a second end and capacitors including planar conductors connected to the first ends of the transverse inductors, planar conductors connected to the second ends of the transverse inductors, and insulating layers disposed between the planar conductors. Each of the transverse inductors is helical and wound at least more than one turn.

Abstract: A heat dissipating circuit board for a power semiconductor includes an electrode material on which a power semiconductor is mounted on a front surface thereof, and a member bonded to a front surface side of the electrode material. The member is made up from a material which exhibits a lower coefficient of thermal expansion than that of the electrode material, and which exhibits a higher Young's modulus than that of the electrode material.

Abstract: In accordance with a non-limiting example, a connector mates to a circuit board at a connector interface. The connector often introduces an undesirable level of crosstalk between pairs. Traces are formed on the circuit board in a “compensation region” that also introduces crosstalk between pairs. The “compensation region” is created in a geometrically controlled fashion such that the crosstalk in the compensation region is of equal magnitude, but opposing phase to the crosstalk introduced by the connector. Thus, the overall crosstalk is minimized.