Abstract: Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.

Abstract: A static random access memory (SRAM) includes: a first carbon nanotube (CNT) inverter, a second CNT inverter, a first switching transistor, and a second switching transistor. The first CNT inverter includes at least a first CNT transistor. The second CNT inverter is connected to the first CNT inverter and includes at least one second CNT transistor. The first switching transistor is connected to the first CNT inverter. The second switching transistor is connected to the second CNT inverter.

Abstract: A method for removing a metallic nanotube, which is formed on a substrate in a first direction, includes forming a plurality of conductors in a second direction crossing the first direction, electrically contacting the plurality of conductors with metallic nanotube, respectively, forming at least two voltage-applying electrodes on the conductors, each of which electrically contacting at least one of the conductors, and applying voltages to at least some of the conductors through the voltage-applying electrodes, respectively. Among the conductors to which the voltages are respectively applied, every two adjacent conductors have an electrical potential difference created therebetween, so as to burn out the metallic nanotube.

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract: A method of forming an amorphous carbon layer on an insulating layer includes the step of forming an amorphous carbon layer using a plasma reaction process. The amorphous carbon layer is formed in an atmosphere containing a plasma excitation gas, a CxHy series gas, a silicon-containing gas, and an oxygen-containing gas.

Abstract: A method for forming an oxide film on a carbon film includes the steps of forming a carbon film on an object to be processed; forming an object-to-be-oxidized layer on the carbon film; and forming an oxide film on the object-to-be-oxidized layer while oxidizing the object-to-be-oxidized layer.

Abstract: Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes. Particularly, a method of doping carbon nanotubes having improved conductivity by reforming the carbon nanotubes using an oxidizer, doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes are provided.

Abstract: An electrical connection structure having elongated carbon structures electrically connected to an electroconductive body is obtained by successively layering an electroconductive catalyst support layer, a fine catalyst particle layer for producing the elongated carbon structures and the elongated carbon structures on the electroconductive body. A low-resistance electrical connection structure is provided.

Abstract: A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.

Abstract: A field emitter array structure is provided. The field emitter array structure includes a plurality of vertical un-gated transistor structures formed on a semiconductor substrate. The semiconductor substrate includes a plurality of vertical pillar structures to define said un-gated transistor structures. A plurality of emitter structures are formed on said vertical un-gated transistor structures. Each of said emitter structures is positioned in a ballasting fashion on one of said vertical un-gated transistor structures so as to allow said vertical ungated transistor structure to effectively provide high dynamic resistance with large saturation currents.

Abstract: Disclosed is a semiconductor device including a SiC substrate and a heat conductor formed in a hole in the SiC substrate and made of a linear structure of carbon elements.

Abstract: A semiconductor device and associated method for forming. The semiconductor device comprises an electrically conductive nanotube formed over a first electrically conductive member such that a first gap exists between a bottom side the electrically conductive nanotube and a top side of the first electrically conductive member. A second insulating layer is formed over the electrically conductive nanotube. A second gap exists between a top side of the electrically conductive nanotube and a first portion of the second insulating layer. A first via opening and a second via opening each extend through the second insulating layer and into the second gap.

Abstract: A carbon nanotube (CNT) array is patterned on a substrate. The substrate can be a microelectronic die, an interposer-type structure for a flip-chip, a mounting substrate, or a board. The CNT array is patterned by using a patterned metallic seed layer on the substrate to form the CNT array by chemical vapor deposition. The patterned CNT array can also be patterned by using a patterned mask on the substrate to form the CNT array by growing. A computing system that uses the CNT array for heat transfer from the die is also used.

Abstract: Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal.

Abstract: A multiple die structure includes a first die (110), a second die (120), a carbon nanotube (130) having a first end (131) in physical contact with the first die and having a second end (132) in physical contact with the second die, and an electrically conductive material (240) in physical contact with the first end of the carbon nanotube and in physical contact with the first die. Forming a connection between the first die and the second die can include providing a connection structure (400, 500, 600, 900) in which the electrically conductive material is adjacent to the carbon nanotube, placing the connection structure adjacent to the first die and to the second die, and bonding the first die and the second die to the connection structure.

Abstract: An apparatus includes a plurality of wash durable clothing strands; an array of nano electronic elements fabricated in the strands; and an array of memory elements coupled to the nano electronic elements. The nano electronic elements can include solar cells, display elements, or antennas, among others.

Abstract: A multilayer insulating structure including a first stop layer, a first insulating layer and a second stop layer is formed on the first conductive structure. A second conductive structure and a second insulating layer are formed on the first conductive structure. The second insulating layer and the second conductive structure are etched to form a first hole and a second hole having a first radius. A spacer is formed on sidewalls of the first and second holes. The second stop layer and the first insulating layer are etched using the spacer as an etch mask to form a third hole having a second radius smaller than the first radius. A sacrificial filler is formed on the first stop layer to fill the third hole. After removing the spacer, the sacrificial filler is removed. The first stop layer is etched. A carbon nano-tube is grown from the first conductive structure.

Abstract: The high-power pack semiconductor module (1) comprises a layer (3, 4), which is brought into direct contact with one or both of the main electrodes of the Si semiconductor chip, (2), said layer being made of a metal matrix composite material whose coefficient of thermal expansion can be tailored to a value either close or matching that of Si.

Abstract: A semiconductor package is disclosed that includes a semiconductor device; a circuit board; and a connection mechanism including a first conductive terminal provided on the semiconductor device, and a second conductive terminal provided on the circuit board side, the connection mechanism electrically connecting the semiconductor device and the circuit board via the first conductive terminal and the second conductive terminal. At least one of the first conductive terminal and the second conductive terminal of the connection mechanism includes one or more carbon nanotubes each having one end thereof fixed to the surface of the at least one of the first conductive terminal and the second conductive terminal, and extending in a direction away from the surface. The first conductive terminal and the second conductive terminal engage each other through the carbon nanotubes.

Abstract: A Carbon NanoTube (CNT) structure includes a substrate, a CNT support layer, and a plurality of CNTs. The CNT support layer is stacked on the substrate and has pores therein. One end of each of the CNTs is attached to portions of the substrate exposed through the pores and each of the CNTs has its lateral sides supported by the CNT support layer. A method of vertically aligning CNTs includes: forming a first conductive substrate; stacking a CNT support layer having pores on the first conductive substrate; and attaching one end of the each of the CNTs to portions of the first conductive substrate exposed through the pores.

Abstract: This invention provides novel methods of fabricating novel gated field emission structures that include aligned nanowire electron emitters (individually or in small groups) localized in central regions within gate apertures. It also provides novel devices using nanoscale emitters for microwave amplifiers, electron-beam lithography, field emission displays and x-ray sources. The new emission structures are particularly useful in the new devices.

Abstract: An embodiment of the present invention is a technique to control carbon nanotubes (CNTs). A laser beam is focused to a carbon nanotube (CNT) in a fluid. The CNT is responsive to a trapping frequency. The CNT is manipulated by controlling the focused laser beam.

Abstract: Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure.

Abstract: The present invention describes a rewiring plate for components with connection grids of between approx. 100 nm and 10 ?m, which rewiring plate includes a base body and passages with carbon nanotubes, the lower end of the passages opening out into contact connection surfaces, and the carbon nanotubes forming an electrically conductive connection from the contact connection surfaces to the front surface of the base body.

Abstract: Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal.