Abstract: In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than ?5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

Abstract: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

Abstract: In accordance with one or more embodiments, a semiconductor device comprises a semiconductor die having a heat region disposed on at least one portion of the semiconductor die, and a diamond substrate disposed proximate to the semiconductor die, wherein the diamond substrate is capable of dissipating heat from the diamond substrate via at least one or more bumps coupling the diamond substrate to the heat region of the semiconductor die.

Abstract: Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.

Abstract: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.

Abstract: A heat spreader is presented which can provide effective thermal management in a cost effective manner. The heat spreader includes a plurality of diamond particles arranged in a single layer surrounded by a metallic mass. The metallic mass cements the diamond particles together. The layer of diamond particles is a single particle thick. Besides the single layer of diamond particles, the metallic mass has substantially no other diamond particles therein. A thermal management system including a heat source and a heat spreader is also presented, along with methods for making and methods for use of such heat spreaders.

Abstract: A method for mounting a semiconductor device onto a composite substrate, including a submount and a heat sink, is described. According to one aspect of the invention, the materials for the submount and the heat sink are chosen so that the value of coefficient of thermal expansion of the semiconductor device is in between the values of coefficients of thermal expansion of the materials of the submount and the heat sink, the thickness of the submount being chosen so as to equalize thermal expansion of the semiconductor device to that of the surface of the submount the device is mounted on. According to another aspect of the invention, the semiconductor device, the submount, and the heat sink are soldered into a stack at a single step of heating, which facilitates reduction of residual post-soldering stresses.

Abstract: Embodiments of apparatuses, articles, methods, and systems for a monolithic microwave integrated circuit with a substrate having a diamond layer are generally described herein. Other embodiments may be described and claimed.

Abstract: A semiconductor device is disclosed. The semiconductor device includes: a first electrode, disposed over a first region of a substrate; and a conductive layer, disposed over the substrate, including a second electrode disposed above the first electrode, wherein the second electrode comprises a mesh main part having a plurality of openings, and a plurality of extending parts, wherein the extending parts are connected to the mesh main part at periphery of the openings and extend toward a surface of the first electrode.

Abstract: Various semiconductor chip thermal management systems and methods are disclosed. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip to a substrate and coupling a diamond heat spreader that has a thermoelectric cooler to the semiconductor chip. A vapor chamber is coupled to the diamond heat spreader.

Abstract: In one embodiment an anti-fuse structure is provided that includes a first dielectric material having at least a first anti-fuse region and a second anti-fuse region, wherein at least one of the anti-fuse regions includes a conductive region embedded within the first dielectric material. The anti-fuse structure further includes a first diamond like carbon layer having a first conductivity located on at least the first dielectric material in the first anti-fuse region and a second diamond like carbon layer having a second conductivity located on at least the first dielectric material in the second anti-fuse region. In this embodiment, the second conductivity is different from the first conductivity and the first diamond like carbon layer and the second diamond like carbon layer have the same thickness. The anti-fuse structure also includes a second dielectric material located atop the first and second diamond like carbon layers.

Abstract: A semiconductor device assembly and method can include a single semiconductor layer or stacked semiconductor layers, for example semiconductor wafers or wafer sections (semiconductor dice). On each semiconductor layer, a diamond layer formed therethrough can aid in the routing and dissipation of heat. The diamond layer can include a first portion on the back of the semiconductor layer, and one or more second portions which extend vertically into the semiconductor layer, for example completely through the semiconductor layer. Thermal contact can then be made to the diamond layer to conduct heat away from the one or more semiconductor layers. A conductive via can be formed through the diamond layers to provide signal routing and heat dissipation capabilities.

Abstract: The invention is a method for growing a critical adherent diamond layer on a substrate by Chemical Vapor Deposition (CVD) and the article produced by the method. The substrate can be a compound semiconductor coated with an adhesion layer. The adhesion layer is preferably a dielectric, such as silicon nitride, silicon carbide, aluminum nitride or amorphous silicon, to name some primary examples. The typical thickness of the adhesion layer is one micrometer or less. The resulting stack of layers, (e.g. substrate layer, adhesion layer and diamond layer) is structurally free of plastic deformation and the diamond layer is well adherent to the dielectric adhesion layer such that it can be processed further, such as by increasing the thickness of the diamond layer to a desired level, or by subjecting it to additional thin film fabrication process steps. In addition to preventing plastic deformation of the layer stack, the process also reduces the formation of soot during the CVD process.

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Abstract: A heat spreader is presented which can provide effective thermal management in a cost effective manner. The heat spreader includes a plurality of diamond particles arranged in a single layer surrounded by a metallic mass. The metallic mass cements the diamond particles together. The layer of diamond particles is a single particle thick. Besides the single layer of diamond particles, the metallic mass has substantially no other diamond particles therein. A thermal management system including a heat source and a heat spreader is also presented, along with methods for making and methods for use of such heat spreaders.

Abstract: Semiconductor devices and methods for making such devices are provided. One such method may include forming an epitaxial layer of single crystal SiC on a single crystal Si growth substrate, forming an epitaxial diamond layer on the layer of SiC, forming a Si layer on the diamond layer, bonding a SiO2 surface of a Si carrier substrate to the Si layer, and removing the Si growth substrate to expose the SiC layer. In yet another aspect, a semiconductor layer may be deposited onto the SiC layer. The semiconductor layer may further be deposited epitaxially.

Abstract: An integrated circuit chip having a heat spreader comprising CVD diamond extending along the chip support body and thermal vias extending through the support body in regions free of active devices or functional elements. The thermal vias may thermally conductive and electrically conductive or may be thermally conductive and electrically resistive. The integrated circuit chips may be 3D integrated circuit chips.

Abstract: A thermal interface material (100) includes a macromolecular matrix (10) and a plurality of thermally conductive fibers (20) incorporated therein. The macromolecular matrix (10) has a first surface (11) and an opposite second surface (12). Each of the thermally conductive fibers (20) is substantially parallel to each other and extends between the first and second surfaces (11), (12). A method for manufacturing the thermal interface material includes the steps of: (a) providing a number of thermally conductive fibers; (b) aligning the thermally conductive fibers uniformly and directionally to form an array of the thermally conductive fibers; (c) immersing the array of thermally conductive fibers into a liquid macromolecular material; (d) solidifying the liquid macromolecular material to obtain a macromolecular matrix having the two opposite surfaces with the thermally conductive fibers embedded therein, that is, a desired interface material is obtained.

Abstract: By filling an air gap between tiers of a stacked IC device with a thermally conductive material, heat generated at one or more locations within one of the tiers can be laterally displaced. The lateral displacement of the heat can be along the full length of the tier and the thermal material can be electrically insulating. Through silicon-vias (TSVs) can be constructed at certain locations to assist in heat dissipation away from thermally troubled locations.

Abstract: Methods are disclosed for providing reduced particle generating silicon carbide. The silicon carbide articles may be used as component parts in apparatus used to process semiconductor wafers. The reduced particle generation during semiconductor processing reduces contamination on semiconductor wafers thus increasing their yield.

Abstract: Various semiconductor chip thermal management systems and methods are disclosed. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip to a substrate and coupling a diamond heat spreader that has a thermoelectric cooler to the semiconductor chip. A vapor chamber is coupled to the diamond heat spreader.

Abstract: Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die.

Abstract: A method of making efficient Integrated Diamond Carrier heat sink and mounting structures usable typically to mount the solid-state laser bars often employed for pumping high power lasers, for example. The disclosed method forms the Integrated Diamond Carrier on a shaped sacrificial substrate member by chemical vapor deposition growing of diamond on a patterned substrate, made from for example silicon semiconductor. The substrate serves as a mold and is etched away after Integrated Diamond Carrier base plate formation leaving the freestanding diamond carrier. Optically usable surfaces are achieved on the Integrated Diamond Carrier through use of substrate crystal plane characteristics and an improved deposition arrangement.

Abstract: This invention discloses a manufacturing method and a structure for a chip heat dissipation. This heat dissipation structure includes a bottom plate of circuit structure, a die of central processing unit and a cap. The cover is often used in conducting the waste heat generated from the chip. The cover can be made of a special thermal conduction material, including a metal and a bracket structure of carbon element which have high thermal conductivity so as to improve the efficiency of heat conduction. The corresponding manufacturing method for this heat conduction material can be made with chemical vapor deposition, physical vapor deposition, electroplating or the other materials preparation method. The bracket structure of carbon element can be coated on the metal surface and also can be mixed into the metal.

Abstract: The present invention provides a silicon carbide semiconductor device comprising a semiconductor substrate comprising silicon carbide, which contains a first conductivity type impurity diffused therein in a high concentration, a semiconductor layer formed over the semiconductor substrate and containing the first conductivity type impurity diffused therein in a low concentration, a plurality of well regions formed on a front surface side of a cell forming area set to the semiconductor layer and in which a second conductivity type impurity corresponding to a type opposite to the first conductivity type impurity is diffused, source layers formed on the front surface side lying within the well regions and each containing the first conductivity type impurity diffused therein in a high concentration, an outer peripheral insulating film thick in thickness, which is formed over the semiconductor layer in an outer peripheral area that surrounds the cell forming area, a gate oxide film formed over the front surface of

Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a substrate, a thermal spreading layer, a connecting layer and an epitaxial structure. The substrate is selected from a transparent substrate or a non-transparent substrate, which corresponds to different materials of the connecting layers respectively. The thermal spreading layer, configured to improve the thermal conduction of the light emitting diode, is selected from diamond, impurity-doped diamond or diamond-like materials.

Abstract: A diamond composite heat spreader having a variable thermal conductivity gradient can improve control of heat transfer based on a specific application. A diamond-containing region of the heat spreader can contain diamond particles such that the diamond concentration and/or the diamond particle size a varied to produce a desired thermal conductivity gradient. Regions proximate to a heat source can have a higher thermal conductivity than regions further away from the heat source. Thin diamond films can also be used in conjunction with the particulate diamond in order to provide a region of maximum thermal conductivity adjacent a heat source.

Abstract: A diamond composite heat spreader having a low thermal mismatch stress can improve reliability and cost of diamond-based heat spreaders. A diamond composite heat spreader can have a diamond film and a thermally conductive base having a residual thermal mismatch stress which is less than about 75% of a residual thermal mismatch stress which would result from forming the diamond film on the thermally conductive base using a high temperature deposition process at 700° C. The diamond film can be formed on the thermally conductive base using a low temperature vapor deposition process.

Abstract: Diamond heat spreaders are produced having thermal properties approaching that of pure diamond. Diamond particles of relatively large grain size are tightly packed to maximize diamond-to-diamond contact. Subsequently, smaller diamond particles may be introduced into the interstitial voids to further increase the diamond content per volume. An interstitial material is then introduced which substantially fills the remaining voids and should have favorable thermal properties as well as form chemical bonds with the diamond. Alternatively, the packed diamond may be subjected to ultrahigh pressures over 4 GPa in the presence of a sintering aid. The resulting diamond heat spreader has diamond particles which are substantially sintered together to form a continuous diamond network and small amounts of a sintering agent.

Abstract: A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.

Abstract: Diamond heat spreaders are produced having thermal properties approaching that of pure diamond. Diamond particles of relatively large grain size are tightly packed to maximize diamond-to-diamond contact. Subsequently, smaller diamond particles may be introduced into the interstitial voids to further increase the diamond content per volume. An interstitial material is then introduced which substantially fills the remaining voids and should have favorable thermal properties as well as form chemical bonds with the diamond. Alternatively, the packed diamond may be subjected to ultrahigh pressures over 4 GPa in the presence of a sintering aid. The resulting diamond heat spreader has diamond particles which are substantially sintered together to form a continuous diamond network and small amounts of a sintering agent.

Abstract: A multiple power density packaging structure with two or more semiconductor chips on a common wiring substrate having a common thermal spreader with a planar surface in thermal contact with the non-active surfaces of the chips. The semiconductor chips have different cooling requirements and some of the chips are thinned to insure that the chips requiring the lowest thermal resistance has the thinnest layer of a thermal adhesive or metal or solder interface between the chip and thermal spreader.

Abstract: Diamond heat spreaders are produced having thermal properties approaching that of pure diamond. Diamond particles of relatively large grain size are tightly packed to maximize diamond-to-diamond contact. Subsequently, smaller diamond particles may be introduced into the interstitial voids to further increase the diamond content per volume. An interstitial material is then introduced which substantially fills the remaining voids and should have favorable thermal properties as well as form chemical bonds with the diamond. Alternatively, the packed diamond may be subjected to ultrahigh pressures over 4 GPa in the presence of a sintering aid. The resulting diamond heat spreader has diamond particles which are substantially sintered together to form a continuous diamond network and small amounts of a sintering agent.

Abstract: Electronic assemblies and methods for forming assemblies are described. One method of forming a semiconductor device includes providing a support substrate and forming a diamond layer on the support substrate. The diamond layer is detached from the support substrate and diced into a plurality of diamond heat spreader bodies. A material comprising a metal is formed on a first diamond heat spreader body of the plurality of diamond heat spreader bodies. A die is positioned on the first diamond heat spreader body so that the material comprising a metal is between the die and the first diamond heat spreader body. The method also includes heating the material comprising a metal and coupling the die to the first diamond heat spreader body. After the coupling the die to the first diamond heat spreader body, the method also includes coupling the die to a substrate, wherein the die is positioned between the first diamond heat spreader body and the substrate. Other embodiments are described and claimed.

Abstract: The present invention is directed to an electrostatic discharge (ESD) device with an improved ESD robustness for protecting output buffers in I/O cell libraries. The ESD device according to the present invention uses a novel I/O cell layout structure for implementing a turn-on restrained method that reduces the turn-on speed of an ESD guarded MOS transistor by adding a pick-up diffusion region and/or varying channel lengths in the layout structure.