Abstract: A method of manufacturing a sensor device includes obtaining a semiconductor die structure comprising a transmitter and a receiver. Then, a first sacrificial stud is affixed to the transmitter and a second sacrificial stud is affixed to the receiver. The semiconductor die is affixed to a lead frame, and pads on the semiconductor die structure are wirebonded to the lead frame. The lead frame, the semiconductor die structure, and the wirebonds are encapsulated in a molding compound, while the tops of the first and second sacrificial studs are left exposed. The first and second sacrificial studs prevent the molding compound from encapsulating the transmitter and the receiver, and are removed to expose the transmitter in a first cavity and the receiver in a second cavity. In some examples, the semiconductor die structure includes a first semiconductor die comprising the transmitter and a second semiconductor die comprising the receiver.

Abstract: A MEMS device formed by a substrate, having a surface; a MEMS structure arranged on the surface; a first coating region having a first Young's modulus, surrounding the MEMS structure at the top and at the sides and in contact with the surface of the substrate; and a second coating region having a second Young's modulus, surrounding the first coating region at the top and at the sides and in contact with the surface of the substrate. The first Young's modulus is higher than the second Young's modulus.

Abstract: A semiconductor device according to the present embodiment includes a circuit board comprising a plurality of electrodes provided on a first surface, a first resin layer provided on the first surface around the electrodes, and a second resin layer provided on the first resin layer. A first semiconductor chip is connected to a first one of the electrodes. A second semiconductor chip is provided above the first semiconductor chip, being larger than the first semiconductor chip, and is connected to a second one of the electrodes via a metal wire. A third resin layer is provided between the first semiconductor chip and the second semiconductor chip and between the second resin layer and the second semiconductor chip, and covers the first semiconductor chip.

Abstract: In examples, a semiconductor device comprises a semiconductor die, an opaque mold compound housing covering the semiconductor die, a conductive terminal extending from the mold compound housing, and an insulative coat covering the mold compound housing and at least a portion of the conductive terminal.

Abstract: An elastic wave device includes a plate-shaped elastic wave element and a resin structure including a high elastic modulus resin portion and low elastic modulus resin portions. The low elastic modulus resin portions are provided in regions of side surfaces of an elastic wave element substrate, which extend from end portions at an IDT electrode formation surface side and do not reach a surface at a side opposite to an IDT electrode formation surface, and a remaining resin portion of a portion of the resin structure, which contacts with the side surfaces of the elastic wave element substrate, is the high elastic modulus resin portion.

Abstract: A method of packaging a radio frequency (RF) transistor device includes attaching one or more electronic devices to a carrier substrate, applying an encapsulant over at least one of the one or more electronic devices, and providing a protective structure on the carrier substrate over the one or more electronic devices. A packaged RF transistor device includes a carrier substrate, one or more electronic devices attached to the carrier substrate, an encapsulant material over at least one of the one or more electronic devices and extending onto the carrier substrate, and a protective structure on the carrier substrate over the one or more electronic devices and the encapsulant material.

Abstract: A semiconductor device includes a first die extending through a molding compound layer, a first dummy die having a bottom embedded in the molding compound layer, wherein a height of the first die is greater than a height of the first dummy die, and an interconnect structure over the molding compound layer, wherein a first metal feature of the interconnect structure is electrically connected to the first die and a second metal feature of the interconnect structure is over the first dummy die and extends over a sidewall of the first dummy die.

Abstract: A package that includes a substrate, an integrated device, a first encapsulation layer and a void. The substrate includes a first surface. The integrated device is coupled to the first surface of the substrate. The first encapsulation layer is located over the first surface of the substrate and the integrated device. The first encapsulation layer includes an undercut relative to a side surface of the integrated device. The void is located between the integrated device and the first surface of the substrate. The void is laterally surrounded by the undercut of the encapsulation layer.

Abstract: A method of manufacturing an electronic device includes preparing an electronic component including a first substrate on a main surface of which a functional unit and a first resin layer are formed. The first resin layer has a first surface facing the main surface of the first substrate, a second surface opposed to the first surface, a cavity on the first surface enclosing the functional unit, and a portion defining a wall of the cavity. The first resin layer defines a recess provided with a solder layer on the second surface. The method further includes preparing a second substrate having an electrode pad formed on a main surface, aligning the electronic component with the second substrate to layer the solder layer and the electrode pad in contact with the solder layer, and forming the electronic component and the second substrate into the electronic device.

Abstract: An acoustic wave filter device includes a filter disposed on a substrate, a wall member disposed on the substrate and surrounding the filter, a cap member disposed on the wall member and bounding an internal space with the wall member; and a support member disposed on the cap member. The support member is disposed above the internal space and includes a bump disposed on the cap member.

Abstract: A semiconductor package device includes: (1) a substrate having a first surface; (2) a permeable element including a first portion disposed on the first surface of the substrate, a second portion protruding from the first portion, and a third portion disposed on the second portion and contacting the second portion of the permeable element; (3) a first electrical element disposed on the substrate and surrounded by the second portion of the permeable element; and (4) a coil disposed on the substrate and surrounding the second portion of the permeable element.

Abstract: An electronic component may include a substrate having a functional unit formed on a main surface of the substrate and a first resin layer formed on the main surface, the first resin layer having a first surface facing the main surface and a second surface opposed to the first surface, the first resin layer defining a cavity on the first surface enclosing the functional unit, the first resin layer defining a recess on the second surface, and a solder layer being formed in the recess so as not to exceed the second surface in a thickness direction. The functional unit may include a surface acoustic wave (SAW) element or a film bulk acoustic resonator (FBAR) having a mechanically movable portion. The substrate may be formed of dielectric material.

Abstract: A semiconductor device has a stress relief buffer mounted to a temporary substrate in locations designated for bump formation. The stress relief buffer can be a multi-layer composite material such as a first compliant layer, a silicon layer formed over the first compliant layer, and a second compliant layer formed over the silicon layer. A semiconductor die is also mounted to the temporary substrate. The stress relief buffer can be thinner than the semiconductor die. An encapsulant is deposited between the semiconductor die and stress relief buffer. The temporary substrate is removed. An interconnect structure is formed over the semiconductor die, encapsulant, and stress relief buffer. The interconnect structure is electrically connected to the semiconductor die. A stiffener layer can be formed over the stress relief buffer and encapsulant. A circuit layer containing active devices, passive devices, conductive layers, and dielectric layers can be formed within the stress relief buffer.

Abstract: A semiconductor device includes a first wiring board, a second semiconductor chip, and a second seal. The first wiring board includes a first substrate, a first semiconductor chip, and a first seal. The first semiconductor chip is disposed on the first substrate. The first seal is disposed on the first substrate. The first seal surrounds the first semiconductor chip. The first seal has the same thickness as the first semiconductor chip. The second semiconductor chip is stacked over the first semiconductor chip. The first semiconductor chip is between the second semiconductor chip and the first substrate. The second semiconductor chip is greater in size in plan view than the first semiconductor chip. The second seal seals at least a first gap between the first semiconductor chip and the second semiconductor chip.

Abstract: A method of packaging a pressure sensor die includes providing a lead frame having a die pad and lead fingers that surround the die pad. A tape is attached to a first side of the lead frame. A pressure sensor die is attached to the die pad on a second side of the lead frame and bond pads of the die are connected to the lead fingers. An encapsulant is dispensed onto the second side of the lead frame and covers the lead fingers and the electrical connections thereto. A gel is dispensed onto a top surface of the die and covers the die bond pads and the electrical connections thereto. A lid is attached to the lead frame and covers the die and the gel, and sides of the lid penetrate the encapsulant.

Abstract: A semiconductor device in accordance with an embodiment comprises a semiconductor chip; a die pad having a chip mount surface for mounting the semiconductor chip; first leads electrically connected to the semiconductor chip; a thermosetting resin part for securing end parts of the first leads to the die pad; and a thermoplastic resin part for sealing the semiconductor chip, the die pad, and the thermosetting resin part.

Abstract: A semiconductor device includes: a case with an opening formed thereat; a semiconductor element housed inside the case; a first conductor plate housed inside the case and positioned at one surface side of the semiconductor element; a second conductor plate housed inside the case and positioned at another surface side of the semiconductor element; a positive bus bar electrically connected to the first conductor plate, through which DC power is supplied; a negative bus bar electrically connected to the second conductor plate, through which DC power is supplied; a first resin member that closes off the opening at the case; and a second resin member that seals the semiconductor element, the first conductor plate and the second conductor plate and is constituted of a material other than a material constituting the first resin member.

Abstract: An embodiment of the disclosure provides a semiconductor device. The semiconductor device includes a plurality of metallization layers comprising a topmost metallization layer. The topmost metallization layer has two metal features having a thickness T1 and being separated by a gap. A composite passivation layer comprises a HDP CVD oxide layer under a nitride layer. The composite passivation layer is disposed over the metal features and partially fills the gap. The composite passivation layer has a thickness T2 about 20% to 50% of the thickness T1.

Abstract: A package process is provided. An adhesive layer is disposed on a carrier board and then plural first semiconductor devices are disposed on the adhesive layer. A first molding compound formed on the carrier board covers the sidewalls of the first semiconductor devices and fills the gaps between the first semiconductor devices so as to form a chip array board constructed by the first semiconductor devices and the first molding compound. Next, plural second semiconductor devices are flip-chip bonded to the first semiconductor devices respectively. Then, a second molding compound formed on the chip array board at least covers the sidewalls of the second semiconductor devices and fills the gaps between the second semiconductor devices. Subsequently, the chip array board is separated from the adhesive layer. Then, the first and the second molding compound are cut along the gaps between the second semiconductor devices.

Abstract: Provided is a ceramic chip assembly configured to economically and reliably insulate an exposed portion of a metal lead wire from an environmental change. The ceramic chip assembly includes a ceramic base having electrical characteristics, a pair of external electrodes that are disposed on a pair of surfaces of the ceramic base, respectively, the surfaces of the ceramic base being opposed to each other, a pair of metal lead wires as single cores having first ends that are electrically and mechanically connected to the external electrodes, respectively, by an electrical conductive adhesive member, an insulation sealant sealing the ceramic base, the external electrodes, and the first ends of the metal lead wires to expose second ends of the metal lead wires, and an insulation polymer coating layer continuously formed on both the insulation sealant and portions of the metal lead wires exposed out of the insulation sealant.

Abstract: A method of producing a LED package through controlled wetting.

Abstract: A semiconductor device includes a first wiring hoard, a second semiconductor chip, and a second seal. The first wiring board includes a first substrate, a first semiconductor chip, and a first seal. The first semiconductor chip is disposed on the first substrate. The first seal is disposed on the first substrate. The first seal surrounds the first semiconductor chip. The first seal has the same thickness as the first semiconductor chip. The second semiconductor chip is stacked over the first semiconductor chip. The first semiconductor chip is between the second semiconductor chip and the first substrate. The second semiconductor chip is greater in size in plan view than the first semiconductor chip. The second seal seals at least a first gap between the first semiconductor chip and the second semiconductor chip.

Abstract: A semiconductor module manufacturing method includes a step of bonding a semiconductor wafer, which has a plurality of semiconductor elements each of which has an element electrode formed thereon, on an expansible first insulating resin layer; a step of dicing the semiconductor wafer; a step of expanding the first insulating resin layer to widen a gap between semiconductor elements; a pressure-bonding step of pressure-bonding a metal plate whereupon an electrode is arranged and the semiconductor elements with the widened gaps in between, by having a second insulating resin layer in between, and electrically connecting the electrode and the element electrodes; a step of forming a wiring layer which corresponds to each semiconductor element by selectively removing the metal plate and forming a plurality of semiconductor modules connected by the first insulating resin layer and the second insulating resin layer; and a step of separating the semiconductor modules by cutting the first insulating resin layer and th

Abstract: Magnetic field sensors and associated methods of manufacturing the magnetic field sensors include molded structures to encapsulate a magnetic field sensing element and an associated die attach pad of a lead frame and to also encapsulate or form a magnet or a flux concentrator.

Abstract: A package process includes following steps. A circuit mother board comprising a plurality of circuit boards is disposed on a carrier. Semiconductor devices are provided, wherein each of the semiconductor devices has a top surface and a bottom surface opposite thereto. Each of the semiconductor devices has conductive vias each having a first end surface and a second end surface exposed by the bottom surface of the semiconductor device. The semiconductor devices are connected to the corresponding circuit boards through their conductive vias with their bottom surface facing the circuit mother board. An insulating paste is formed between each of the semiconductor devices and its corresponding circuit board. A protection layer is formed on the circuit mother board to cover the semiconductor devices. Then, the protection layer and the semiconductor devices are thinned to expose the first end surface of each of the conductive vias.

Abstract: A plurality of semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. A portion of the encapsulant is designated as a saw street between the die, and a portion of the encapsulant is designated as a substrate edge around a perimeter of the encapsulant. The carrier is removed. A first insulating layer is formed over the die, saw street, and substrate edge. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first conductive layer and first insulating layer. The encapsulant is singulated through the first insulating layer and saw street to separate the semiconductor die. A channel or net pattern can be formed in the first insulating layer on opposing sides of the saw street, or the first insulating layer covers the entire saw street and molding area around the semiconductor die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a sacrificial carrier assembly having a stack interconnector thereover; mounting an integrated circuit having a connector over the sacrificial carrier assembly with the connector over the stack interconnector; dispensing an underfill material between the sacrificial carrier assembly and the integrated circuit with the underfill material substantially free of a void; encapsulating the integrated circuit over the sacrificial carrier assembly and the underfill material; exposing the stack interconnector by removing the sacrificial carrier assembly; and forming a base array over the underfill material and the stack interconnector.

Abstract: A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1×10?2 g/m2/day at 22° C. and 47% relative humidity. The flexible barrier film is formed from a composition, which comprises a multi-functional acrylate. The composition further comprises the reaction product of an alkoxy-functional organometallic compound and an alkoxy-functional organosilicon compound. A method of forming the flexible barrier film includes the steps of disposing the composition on a substrate and curing the composition to form the flexible barrier film. The flexible barrier film may be utilized in organic electronic devices.

Abstract: Provided are a semiconductor package and a method for fabricating the same. The semiconductor package includes a lower package comprising a lower substrate, a lower semiconductor chip mounted on the lower substrate and comprising a redistribution, and a molding layer molding the lower semiconductor chip, an upper package comprising an upper substrate and an upper semiconductor chip mounted on the upper substrate, with the upper package being stacked on the lower package. The semiconductor package further includes an electrical interconnector extending from the upper substrate into the molding layer and connected to the redistribution to electrically connect the upper and lower packages to each other, and a dummy interconnector extending from the upper substrate into the molding layer to physically couple the upper and lower packages to each other.

Abstract: The present invention is an electronic device comprising a first substrate, a second substrate arranged opposite the first substrate, a sealed portion arranged between the first substrate and the second substrate, and a sealing portion that connects the first and the second substrate and is provided around the sealed portion, wherein at least a portion of the sealing portion following along the periphery of the sealed portion has outer resin sealing portions respectively fixed to the first substrate and the second substrate and an intermediate resin sealing portion arranged so as to be interposed by the outer resin sealing portions between the first substrate and the second substrate, the outer resin sealing portions and the intermediate resin sealing portion contain resin, and a melt flow rate or melting point of the intermediate resin sealing portion differs from a melt flow rate or melting point of the outer resin sealing portions.

Abstract: The symbolization of a semiconductor device (100) is incorporated in a thin sheet (130) attached to the top of the device, facing outwardly with its bare surface. The material of the sheet (about 1 to 10 ?m thick) includes regions of a first optical reflectivity and a first color, and regions (133) of a second optical reflectivity and a second color, which differ from, and contrast with, the first reflectivity and color. Preferred choices for the sheet material include the compound o-cresol novolac epoxy and the compound bisphenol-A, more preferably with the chemical imidazole added to the film material. A preferred embodiment of the invention is a packaged device with a semiconductor chip a (101) connected to a substrate (102); the connection is achieved by bonding wires (111) forming an arch with a top 111a. The chip, the wire arches, and the substrate are embedded in an encapsulation material (120), which borders on the attached top sheet so that the arch tops touch the border (131).

Abstract: A semiconductor package device, a semiconductor package structure, and fabrication methods thereof are provided, which mainly includes disposing a plurality of semiconductor chips on a wafer formed with TSVs (Through Silicon Vias) and electrically connecting the semiconductor chips to the TSVs; encapsulating the semiconductor chips with an encapsulant; and disposing a hard component on the encapsulant. The hard component ensures flatness of the wafer during a solder bump process and provides support to the wafer during a singulation process such that the wafer can firmly lie on a singulation carrier, thereby overcoming the drawbacks of the prior art, namely difficulty in mounting of solder bumps, and difficulty in cutting of the wafer.

Abstract: A method for fabricating MEMS package structure includes the following steps. Firstly, a substrate is provided. Next, a plurality of lower metallic layers and first oxide layers are formed to compose a MEMS structure and an interconnecting structure. Next, an upper metallic layer is formed on the MEMS structure and the interconnecting structure. The upper metallic layer has a first opening and a second opening. Next, the first opening and the second opening are employed as etching channels to remove a portion of the first oxide layers so as to form a first cavity surrounding the MEMS structure and form a second cavity above the interconnecting structure. The first cavity communicates with the second cavity. Next, the second opening is sealed in a vacuum environment. Next, a packaging element is formed on the upper metallic layer in a non-vacuum environment to seal the first opening.

Abstract: An organic light emitting diode (OLED) display comprises: a substrate; a display unit formed on the substrate and including an organic light emitting element; an interception layer positioned at the outside of the display unit on the substrate; and a thin film encapsulation layer which is formed with a stacked film of an inorganic film and an organic film, which has an end portion contacting the interception layer, and which covers the entire display unit and at least a part of the interception layer.

Abstract: A semiconductor wafer includes a plurality of semiconductor die. Contact pads are formed on an active area of the semiconductor die and non-active area of the semiconductor wafer between the semiconductor die. Solder bumps are formed on the contact pads in both the active area of the semiconductor die and non-active area of the semiconductor wafer between the semiconductor die. The I/O terminal count of the semiconductor die is increased by forming solder bumps in the non-active area of the wafer. An encapsulant is formed over the solder bumps. The encapsulant provides structural support for the solder bumps formed in the non-active area of the semiconductor wafer. The semiconductor wafer undergoes grinding after forming the encapsulant to expose the solder bumps. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a package substrate with solder paste or socket.

Abstract: Methods and apparatus to provide die backside metallization and/or surface activated bonding for stacked die packages are described. In one embodiment, an active metal layer of a first die may be coupled to an active metal layer of a second die through silicon vias and/or a die backside metallization layer of the second die. Other embodiments are also described.

Abstract: An integrated package system with die and package combination includes forming a leadframe having internal leads and external leads, encapsulating a first integrated circuit on the leadframe, and encapsulating a second integrated circuit over the first integrated circuit.

Abstract: The present invention provides a method for manufacturing a semiconductor structure, —including—the following steps of: forming a substrate having a package array; forming a thermosetting non-conductive layer covering the substrate; partially solidifying the thermosetting non-conductive layer to form a semi-solid non-conductive layer; connecting chips to the package array on the substrate; pressing and heating the chips and the substrate so that the semi-solid non-conductive layer adheres with the chips and the substrate; pre-heating an encapsulant preformed on a metal layer; covering the chips on the substrate with the encapsulant; and solidifying the encapsulant to completely cover the chips on the substrate. The present invention can reduce use of gold to lower the manufacturing cost and can also improve the heat conduction efficiency of the semiconductor structure to enhance operational stability of the chips.

Abstract: The invention is directed to enhancement of performance of a back surface incident type semiconductor device having a light receiving element and a manufacturing method thereof without increasing a manufacturing cost. A supporting body is attached to a front surface of a semiconductor substrate formed with a light receiving element and its pad electrode. Then, the supporting body is etched to form a via hole penetrating the supporting body and exposing the pad electrode. Then, a wiring connected to the pad electrode and extending onto a front surface of the supporting body through the via hole is formed. Lastly, the semiconductor substrate is separated into a plurality of semiconductor dies by dicing. The semiconductor device is mounted so that the supporting body faces a circuit board.

Abstract: An integrated circuit package system includes: mounting an integrated circuit die over a carrier; attaching a delamination prevention structure over the integrated circuit die; and encapsulating the delamination prevention structure and the integrated circuit die.

Abstract: Disclosed are a chip-type LED package and a light emitting apparatus having the same. The chip-type LED package includes a thermally conductive substrate with lead electrodes formed thereon. An LED chip is mounted on the thermally conductive substrate, and a lower molding portion covers the LED chip. In addition, an upper molding portion having hardness higher than that of the lower molding portion covers the lower molding portion. The upper molding portion is formed by performing transfer molding using resin powder. Accordingly, since the lower molding portion can be formed of a resin having hardness smaller than that of the upper molding portion, it is possible to provide a chip-type LED package in which device failure due to thermal deformation of the molding portion can be prevented.

Abstract: In accordance with the present invention, there is provided multiple embodiments of a package-in-package semiconductor device including shortened electrical signal paths to optimize electrical performance. In each embodiment, the semiconductor device comprises a substrate having a conductive pattern formed thereon. In certain embodiments, a semiconductor package and one or more semiconductor dies are vertically stacked upon the substrate, and placed into electrical communication with the conductive pattern thereof. One or more of the semiconductor dies may include through-silicon vias formed therein for facilitating the electrical connection thereof to the conductive pattern of the substrate or to other electronic components within the vertical stack. Similarly, the semiconductor package may be provided with through-mold vias to facilitate the electrical connection thereof to other electronic components within the vertical stack.

Abstract: In accordance with the present invention, there is provided multiple embodiments of a semiconductor package including two or more semiconductor dies which are electrically connected to an underlying substrate through the use of conductive wires, some of which may be fully or partially encapsulated by an adhesive or insulating layer of the package. In a basic embodiment of the present invention, the semiconductor package comprises a substrate having a conductive pattern disposed thereon. Electrically connected to the conductive pattern of the substrate are first and second semiconductor dies. The first semiconductor die and a portion of the substrate are covered by an adhesive layer. The second semiconductor die, the adhesive layer and a portion of the substrate are in turn covered by a package body of the semiconductor package.

Abstract: An integrated circuit package system including: providing a substrate; mounting an integrated circuit above the substrate; mounting an inner stacking module, having an inner stacking module encapsulation and a molded integral step molded in the inner stacking module encapsulation, above the integrated circuit; and encapsulating the inner stacking module, and the integrated circuit with an encapsulation.

Abstract: A semiconductor device includes a semiconductor substrate having an integrated circuit and at least one connection pad, and at least one external connection electrode electrically connected with the connection pad. A first sealing material is provided on the semiconductor substrate around the external connection electrode, each impurity concentration of an Na ion, a K ion, a Ca ion and Cl ion contained in the first sealing material being not greater than 10 ppm. A second sealing material is provided on at least one of a lower surface and a peripheral side surface of the semiconductor substrate, a total impurity concentration of an Na ion, a K ion, a Ca ion and a Cl ion contained in the second sealing material being not smaller than 100 ppm.

Abstract: An integrated circuit package-in-package system includes: forming an integrated circuit package system including: connecting a first integrated circuit die and a lead, and forming an inner encapsulation covering the first integrated circuit die and a portion of the lead; mounting a second integrated circuit die to the integrated circuit package system; connecting the second integrated circuit die and the lead; and forming a package encapsulation covering the integrated circuit package system and the second integrated circuit die with the lead exposed.

Abstract: A vertical stack type multi-chip package is provided having improved reliability by increasing the grounding performance and preventing the decrease in reliability of the multi-chip package from moisture penetration into a lower semiconductor chip. The vertical stack type multi-chip package comprises an organic substrate having a printed circuit pattern on which a semiconductor chip is mounted. A first semiconductor chip is mounted on a die bonding region of the organic substrate and is electrically connected to the organic substrate through a first wire. A metal stiffener is formed on the first semiconductor chip and connected to the organic substrate by a first ground unit around the first semiconductor chip. An encapsulant is used to seal the first semiconductor chip below the metal stiffener. A second semiconductor chip, which is larger in size than that the first semiconductor chip, is mounted on the metal stiffener and connected by a second ground unit.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing an inner stacking module die; encapsulating the inner stacking module die with an inner stacking module encapsulation to form an inner stacking module, the inner stacking module encapsulation having an inner stacking module protrusion having a planar protrusion surface; and encapsulating at least part of the inner stacking module encapsulation with an encapsulation having a flat top coplanar with the planar protrusion surface or fully encapsulating the inner stacking module encapsulation.

Abstract: A stack of semiconductor dies is disclosed. A first stack level includes a first semiconductor die and at least one first support that are attached to a substrate surface. A second level includes a second semiconductor die and at least one second support that are attached to the active surface of the first semiconductor die and to a coplanar surface of the first support(s). A third level includes a third semiconductor die attached to the active surface of the second semiconductor die and to a coplanar surface of the second support(s). The second and third semiconductor dies do not overlap bond pads of the first and second semiconductor dies, respectively. An adhesive film overlies the entire inactive surface of the second and third semiconductor dies, and attaches the second and third semiconductor dies to the immediately underlying active surface and support(s).

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming an encapsulation surrounding an integrated circuit having an inactive side and an active side exposed; forming a hole through the encapsulation with the hole not exposing the integrated circuit; forming a through conductor in the hole; and mounting a substrate with the integrated circuit surrounded by the encapsulation with the active side facing the substrate.