Abstract: A chip-type electronic component includes a ceramic chip body, an external electrode formed on the chip body, a conductive elastic resin film made of a mixture of metal powder and elastic resin and formed to cover the external electrode, and a metal plating film. The metal powder is exposed at an obverse surface of the conductive elastic resin film. The metal plating film is formed on the obverse surface of the conductive elastic resin film at which the metal powder is exposed.

Abstract: Semiconductor devices (300, 400, and 500) including an integrated circuit (IC) device (100) coupled to a micro-electro-mechanical systems (MEMS) device (200) and a method (600) for producing same are disclosed. The IC device includes a die seal ring (130) and the MEMS device includes a MEMS seal ring (230), and the IC device is coupled to the MEMS device via the die seal ring and the MEMS seal ring. The MEMS device may include one or more passive devices (450, 475) coupled to it. Moreover, a substrate (510) including an aperture (550) may be coupled to the passive device, wherein the aperture enables the passive device to be trimmed after being disposed on the MEMS device. The semiconductor devices include an RF signal path (486) and at least one other signal path (482 and 484), wherein the other signal path(s) may be an analog and/or a digital signal path.

Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

Abstract: A semiconductor device having a structure which can be manufactured with a higher yield includes a local interconnection layer 14 (a first interconnection layer) on a semiconductor substrate 10 and a global interconnection layer 18 (a second interconnection layer) on the local interconnection layer 14. The local interconnection layer 14 and the global interconnection layer 18 include a local interconnection 24 (a first interconnection) and a global interconnection 28 (a second interconnection), respectively, and the global interconnection 28 is thicker than the local interconnection 24. The local interconnection layer 14 and the global interconnection layer 18 also have a dummy interconnection 34 (a first dummy interconnection) and a dummy interconnection 38 (a second dummy interconnection), respectively. The dummy interconnection 34 is narrower than the dummy interconnection 38.

Abstract: An IC package is disclosed that comprises a core region disposed between upper and lower build-up layer regions. In one embodiment, the core region comprises a low modulus material. In an alternative embodiment the core region comprises a medium modulus material. In an alternative embodiment, the core material is selected based upon considerations such as its modulus, its coefficient of thermal expansion, and/or the resulting total accumulated strain. In an alternative embodiment, boundaries with respect to the softness of the core material are established by considering the relative density in opposing conductive build-up layers above and below the core region.

Abstract: A method for fabricating an electrical connection structure of a circuit board is proposed. The circuit board is provided with a plurality of pads on a surface thereof and with a plurality of conductive structures therein for electrically connecting the pad. A plurality of openings is formed penetrating through an insulating layer provided on the circuit board to expose the pad. Subsequently, a conductive base is attached to one surface of the circuit board for electrically connecting the pad. By such arrangement, a conductive material can be formed on the pad located on the other surface of the circuit board by an electroplating process via the conductive base, the pad on the surface, and the conductive structure within the circuit board.

Abstract: The invention relates to a semiconductor switching module for on-board electrical supply systems comprising a plurality of semiconductor chips, and a method for producing the same. The semiconductor switching module has at least one half-bridge circuit comprising a first semiconductor circuit chip as LSS (low side switch) and a second semiconductor circuit chip as HSS (high side switch) on a common circuit structure. The circuit structure includes contact pads on the top side of the circuit structure and lead connections with external contact areas on the underside of the circuit structure and with internal contact areas on the top side of the circuit structure. In this case, at least one of the semiconductor circuit chips is arranged on contact pads of the circuit structure using flip-chip technology and is electrically and cohesively connected to the contact pads by using diffusion solder layers.

Abstract: A semiconductor device mounted on a mother board has a circuit board to be positioned on the mother board and a semiconductor chip positioned on the circuit board. The circuit board has a connection pad, a relay pad spaced away from the connection pad, and a wire connecting between the connection pad and the relay pad on a surface of the circuit board supporting the semiconductor chip. Also, the semiconductor chip has a connection pad corresponding to the connection pad formed on the circuit board. Further, the connection pad on the circuit board and the connection pad on the semiconductor chip are electrically connected to each other through a bonding wire.

Abstract: A semiconductor device includes a substrate with an active area. A last level interconnect capping layer is disposed over the active area. A buffer layer/crack stop layer overlies the last level interconnect capping layer and a passivation layer overlies the buffer layer/crack stop layer. Also, a contact pad (e.g., probe pad, wire bond pad or flip-chip pad) overlies the passivation layer.

Abstract: A laminating step includes a second step of laminating a second insulation layer on a conductive pattern last formed at a first step, roughening the surface of the laminated second insulation layer excluding a desired area, and forming a conductive layer on at least the desired area of the surface of the second insulation layer, and a processing step includes a removing step of removing an upper part of the area higher than the second insulation layer on the substrate obtained at the laminating step, and an exposing step of exposing a part of the area of a conductive pattern adjacent to the lower side of the second insulation layer.

Abstract: Methods for injecting charge include providing a target comprising a first layer on a second layer, coupling a conductive base to the second layer, and providing a medium which is in contact with at least a portion of the first layer. An electrode is positioned to face and is spaced from the first layer and is at least partially in contact with the medium. An electric field is provided across the first and second layers to inject charge to an interface between the first layer and the second layer.

Abstract: A method for manufacturing a coreless packaging substrate is disclosed. The method can produce a coreless packaging substrate which comprises: at least a built-up structure having a first solder mask and a second solder mask, wherein a plurality of openings are formed in the first and second solder mask to expose the conductive pads of the built-up structure; and a plurality of solder bumps as well as solder layers formed on the conductive pads. Therefore, the invention can produce the coreless packaging substrate with high density of circuit layout, less manufacturing steps, and small size.

Abstract: A novel chip packaging structure is disclosed. The chip packaging structure includes a flip chip having a chip backside, at least one concave stress-relieving structure provided in the chip backside, a carrier substrate bonded to the flip chip and an adhesive material interposed between the flip chip and the carrier substrate. During thermal testing and/or functioning of the flip chip, the stress-relieving structure reduces stresses between the flip chip and the carrier substrate and dissipates heat from the flip chip to reduce thermally-induced delamination stresses applied to the adhesive material and thereby enhances reliability of the flip chip.

Abstract: Disclosed herein are novel damage detection circuitries implemented on the periphery of a semiconductor device. The circuitries disclosed herein enable the easy identification of cracks and deformation, and other types of damage that commonly occur during test and assembly processes of semiconductor devices.

Abstract: To pick and place standard dies on a new base for obtaining an appropriate and wider distance between dies than the original distance of dies on a wafer. The package structure has a larger size of balls array than the size of the die by fan out type package. Moreover, the die may be packaged with passive components or other dies with a side by side structure or a stacking structure.

Abstract: A microelectronic module is provided with one or more first conductive pads on at least one of the exterior surfaces of the module for electrical interconnection of the functionality of the module to one or more second conductive pads on a second surface such as printed circuit board. A high density interposer assembly is disposed between the first conductive pads and second conductive pads. Outwardly projecting conductive elements on the interposer assembly are in registration with the first and second conductive pads whereby, when the interposer assembly is interposed between the first and second conductive pads, a mechanical connection is made between the elements, resulting in an electrical path between the first and second conductive pads.

Abstract: A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b).