Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Abstract: In a semi-transmission liquid crystal display device, two resist masks are required to form a reflective electrode and a transparent electrode; therefore, cost is high. A transparent electrode and a reflective electrode which function as a pixel electrode are stacked. A resist pattern which includes a region having a thick film thickness and a region having a thinner film thickness than the aforementioned region is formed over the reflective electrode by using a light exposure mask which includes a semi-transmission portion. The reflective electrode and the transparent electrode are formed by using the resist pattern. Therefore, the reflective electrode and the transparent electrode can be formed by using one resist mask.

Abstract: The purpose of the present invention is to suppress a variation in a threshold voltage (? Vth) in a Thin Film Transistor (TFT) using an oxide semiconductor. The present invention takes a structure as follows to attain this purpose. A semiconductor device having TFT using an oxide semiconductor including: a channel region, a source region, a drain region, and a transition region between the channel region and the source region and between the channel region and the drain region, in which a resistivity of the transition region is smaller than that of the channel region, and larger than that of the source region or the drain region; a source electrode is formed overlapping the source region, and a drain electrode is formed overlapping the drain region; and a thickness of the transition region of the oxide semiconductor is larger than a thickness of the channel region of the oxide semiconductor.

Abstract: It is an object to suppress deterioration of characteristics of a transistor in a driver circuit. A first switch for controlling whether to set a potential state of an output signal by being turned on and off in accordance with the first input signal, and a second switch for controlling whether to set a potential state of an output signal by being turned on and off in accordance with the second input signal are included. A first wiring and a second wiring are brought into electrical continuity by turning on and off of the first switch or the second switch.

Abstract: According to one embodiment, a display device includes a transparent semiconductor, a first insulating layer, a gate electrode, a second insulating layer, a source electrode, a third insulating layer, a transparent electrode which is in contact with the semiconductor in a second contact hole penetrating the first insulating layer, the second insulating layer and the third insulating layer, a fourth insulating layer, a color filter, and a pixel electrode electrically connected to the transparent electrode. The first insulating layer and the second insulating layer are silicon oxide layers. At least one of the third insulating layer and the fourth insulating layer is a silicon nitride layer.

Abstract: Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

Abstract: A display device including a pixel circuit is provided. The pixel circuit includes a first sub-pixel circuit, a second sub-pixel circuit, and a third sub-pixel circuit. The first sub-pixel circuit and the third sub-pixel circuit are separated by the second sub-pixel circuit. The pixel circuit further includes a first data line, a second data line which are separated from each other. A first gate terminal of a first driving transistor of the first sub-pixel circuit is electrically connected to a second gate terminal of a third driving transistor of the second sub-pixel circuit. A first terminal of a switch circuit of the second sub-pixel circuit is electrically connected to the first gate terminal of the first driving transistor of the first sub-pixel circuit. A second terminal of the switch circuit of the second sub-pixel circuit is electrically connected to the second data line.

Abstract: Apparatus for mitigating latch-up within semiconductor devices. A semiconductor device includes a first conductor, a second conductor, and a first gate conductor. The first conductor extends in a first direction, receives a first power supply signal, and is connected to a first electrode. The second conductor extends in the first direction, receives a second power supply signal different from the first power supply signal, and is connected to a second electrode. The first conductor is offset from the second conductor in a second direction perpendicular to the first direction in a top-down view to mitigate formation of parasitic devices within the semiconductor device electrically connecting the first conductor with the second conductor. The first gate conductor is disposed adjacent to the first conductor and the second conductor, is disposed on the first electrode and the second electrode, and receives an input signal.

Abstract: Provided is a pixel driving circuit capable of reducing power consumed for pixel driving by reducing the number of times a capacitor is charged. The pixel driving circuit includes: a video memory configured to store video data related to driving of a plurality of light-emitting devices; a plurality of sub-pixel driving units, respectively corresponding to the plurality of light-emitting devices, configured to supply power to the plurality of light-emitting devices according to the video data stored in the video memory, each of the plurality of sub-pixel driving units having a capacitor unit for charging power required for driving each of the plurality of light-emitting devices; a charge control memory configured to store data related to charging of the capacitor unit; and a charge controller configured to control whether the capacitor unit is charged according to charge control data stored in the charge control memory.

Abstract: A display device may include a pixel circuit layer. A first electrode and a second electrode may be on the pixel circuit layer and spaced from each other. A first insulating layer may be on the pixel circuit layer, the first electrode, and the second electrode. A conductive pattern may be on the first insulating layer and electrically insulated from the first electrode and the second electrode. The bank may be on the conductive pattern. Light emitting elements may be located on the first insulating layer between the first electrode and the second electrode, and electrically coupled to the first electrode and the second electrode.

Abstract: Gate-all-around integrated circuit structures having germanium-doped nanowire/nanoribbon channel structures, and methods of fabricating gate-all-around integrated circuit structures having germanium-doped nanowire/nanoribbon channel structures, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. Individual ones of the vertical arrangement of nanowires have a relatively higher germanium concentration at a lateral mid-point of the nanowire than at lateral ends of the nanowire.

Abstract: A display device according to the present disclosure includes a substrate including a display area, and at least one non-display area; a light emitting element disposed on the substrate; a first thin film transistor including a first semiconductor layer, a first gate electrode, and a first source electrode and a first drain electrode; a second thin film transistor including a second semiconductor layer, a second gate electrode, and a second source electrode and a second drain electrode; a separation structure located in the non-display area and provided to disconnect an organic light emitting layer of the light emitting element; and a first upper interlayer insulating layer, a second upper interlayer insulating layer, and a third upper interlayer insulating layer interposed between the second gate electrode and the second source electrode and the second drain electrode of the second thin film transistor, and sequentially disposed.

Abstract: An active matrix substrate includes a substrate that is transparent, and a plurality of pixels positioned on the substrate. Each pixel includes a thin-film transistor (TFT) positioned on the substrate, a first color filter layer disposed on the substrate so as to cover the TFT, a contact hole being provided in the first color filter layer, a pixel electrode that is positioned on a bottom face and a side face of the contact hole, and on the first color filter layer, and that is electrically connected to the TFT via the contact hole, and a second color filter layer disposed within the contact hole.

Abstract: A display substrate includes: a base substrate; a first conducting layer; a first insulating layer, where the first insulating layer is provided with a first opening; a second conducting layer, connected to the first conducting layer through the first opening, and including a first portion and a second portion, where the first portion is located within the first opening, and the second portion is located outside the first opening and located on the side of the first insulating layer facing away from the base substrate; and an inorganic protective layer including at least a first inorganic protective layer portion located between the second portion and the first insulating layer; in a direction perpendicular to the base substrate, the thickness h1 of the first inorganic protective layer portion and the thickness h2 of the second portion satisfy the following relationship: h2=K*h1, wherein 12?K?18.

Abstract: The present invention is related to a display device, including: a plurality of sub-pixel areas, each including a sub-pixel circuit, each sub-pixel circuit including: a diode, configured to be in a forward-biasing state during a displaying phase of the sub-pixel circuit for emitting light and configured to be in a reverse-biasing state for sensing light of the sub-pixel circuit in a sensing phase; a driving transistor for driving the diode during the display phase; first to sixth transistors, gate control signals are applied to gates of the first to sixth transistors, so that the sub-pixel circuit switches between the display phase and the sensing phase; and a capacitor for storing a data voltage to be written to the diode in the display phase, wherein in the sensing phase the diode generates a photocurrent to an operational amplifier so that the operational amplifier outputs a photocurrent output signal.

Abstract: The present disclosure relates to a drive device and an electronic apparatus, the device including voltage generation module, a switch module, a capacitor module, a transistor module and a light emission module, the voltage generation module is configured to generate a first voltage and a second voltage; the switch module is configured to output the first voltage to a first end of the capacitor module in a first time period, and output the second voltage to a second end of the capacitor module in a second time period, so as to set a voltage of the first end of the capacitor module; the transistor module is configured to drive the light emission module to emit a light with the voltage of the first end of the capacitor module.

Abstract: An organic light-emitting diode includes: a first electrode and a second electrode facing each other; an organic emission layer between the first electrode and the second electrode; and a hole injection layer between the first electrode and the organic emission layer, wherein the hole injection layer includes a second metal compound layer and a second metal layer, the second metal compound layer being between the first electrode and the organic emission layer, and the second metal layer being between the second metal compound layer and the organic emission layer.

Abstract: There is provided a display device including: a light emitting element; and a drive transistor (DRTr) that includes a coupling section (W1) and a plurality of channel sections (CH) coupled in series through the coupling section (W1), wherein the drive transistor (DRTr) is configured to supply a drive current to the light emitting element.

Abstract: A display device includes a pixel including a first sub-pixel to third sub-pixels, each arranged in a first direction and emitting light of a color, a first to third vertical power lines, each extending in a second direction different from the first direction, overlapping the first to third sub-pixels, respectively, and transmitting first to third powers, respectively, a first to third horizontal power lines, each extending in the first direction and electrically connected to the first to third vertical power lines through a contact hole, respectively. Voltages of the first power, the second power, and the third power are different from each other.

Abstract: A display device includes: a substrate that includes an island portion, a first connector that extends in a first direction from the island portion and a second connector that extends from the island portion in a second direction that crosses the first direction; a display unit disposed on the island portion and that includes at least one thin film transistor and at least one display element connected to the at least one thin film transistor; and connecting wires disposed on the first connector and the second connector and connected to the display unit, wherein at least one of the connecting wires is disposed on a same layer as a semiconductor layer of the at least one thin film transistor.

Abstract: A display device includes: a substrate comprising a first contact hole; a thin-film transistor layer on a first surface of the substrate and comprising a plurality of insulating layers and a thin-film transistor; an etching stopper on one or more of the insulating layers and contacting the substrate through a second contact hole surrounding the first contact hole in a plan view; a connection line on the etching stopper; and a pad part on a second surface of the substrate opposite the first surface of the substrate and connected to the connection line through the first contact hole.

Abstract: A method for preparing a semiconductor structure includes: providing a semiconductor substrate; forming a groove in the semiconductor substrate; forming a first insulation layer, the first insulation layer at least covering an inner wall of the groove; forming a channel layer, the channel layer at least covering an inner wall of the first insulation layer; forming a second insulation layer, the second insulation layer at least covering an inner wall of the channel layer; filling the groove with a word line structure; removing part of the semiconductor substrate, part of the first insulation layer, and part of the channel layer, and forming a recess region in an outer side wall of the second insulation layer; and forming a source-drain in the recess region, the source-drain being electrically connected with the channel layer.

Abstract: A display substrate and a display device are disclosed. The display substrate includes a base substrate, a pixel circuit layer, and an anode layer; the pixel circuit layer includes a plurality of pixel driving circuits; and the anode layer includes a plurality of anode; each pixel driving circuit includes a functional thin film transistor; the plurality of pixel driving circuits include a first pixel driving circuit and a second pixel driving circuit which are adjacently arranged, and an orthographic projection of a channel region of the functional thin film transistor in the first pixel driving circuit on the base substrate and an orthographic projection of a channel region of the functional thin film transistor in the second pixel driving circuit on the base substrate both overlap with an orthographic projection of the anode corresponding to the first pixel driving circuit on the base substrate.

Abstract: The present disclosure relates to the structure of a micro light-emitting device and an alignment substrate. The light-emitting device according to one embodiment includes an inclined side surface having a three-dimensional shape. The inclined side surface is formed to protrude from one surface of the micro light-emitting device, has magnetism, and includes two different electrodes formed in one direction. In this case, among the two electrodes, one electrode may be formed on a mesa portion, and the other electrode may be formed on the inclined side surface.

Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

Abstract: A display device includes a lower substrate, a light emitting structure, a lower wire, an upper wire, an insulating layer, and a connection pattern. The light emitting structure is disposed in a display area on the lower substrate. The lower wire is disposed in a peripheral area on the lower substrate. The upper wire is disposed on the lower wire, and partially overlaps the lower wire. The insulating layer structure includes a first contact hole that exposes a first portion of the upper wire, which overlaps the lower wire, and a first portion of the lower wire, which is adjacent to a portion of the lower wire that overlaps the upper wire. The connection pattern is disposed on the insulating layer structure, the lower wire, and the upper wire, and electrically connects the upper wire to the lower wire through the first contact hole.

Abstract: The present invention provides an OLED display panel and a manufacturing method thereof. The OLED display panel comprises a display area and a bonding area defined at least at one side of the display area. The OLED display panel further comprises a substrate and a first metal layer disposed on the substrate. The first metal layer comprises a light-shielding metal disposed corresponding to the display area and a bonding metal disposed corresponding to the bonding area.

Abstract: A substrate assembly includes: a substrate; a gate structure disposed on the substrate; a conductive line disposed on the substrate, wherein from a top view, the conductive line extends along a first direction; and a conductive structure disposed on the substrate, wherein from the top view, the conductive structure is adjacent to the conductive line and separated from the conductive line, and the conductive structure has an overlapping region overlapping the gate structure, wherein from the top view, the overlapping region extends along a second direction, the first direction and the second direction are different, the overlapping region comprises a first end portion, and the first end portion has a curved shape.

Abstract: A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

Abstract: An array substrate and a display device are disclosed. The array substrate includes a base substrate, a plurality of gate lines and a plurality of data lines arranged to intersect each other on the base substrate, a pixel electrode arranged in a region defined by an adjacent gate line and an adjacent data line, and a thin film transistor arranged at an intersection of the gate lines and the data lines. A drain of the thin film transistor is connected with the pixel electrode through a via hole. The gate lines further include a widening portion between adjacent data lines. The widening portion comprises a recess structure. An orthogonal projection of the recess structure on the base substrate at least partly overlaps that of the drain of the thin film transistor on the base substrate.

Abstract: A transistor device that includes a substrate comprising metallic gate contacts, a dielectric layer on the substrate comprising a polyimide or derivative thereof, a semiconductor layer on the dielectric layer comprising a semiconducting polymer confined in a host matrix material comprising a polyimide or derivative thereof, and source and drain contacts on the semiconductor layer.

Abstract: A display device is provided. The display device includes a substrate, a channel layer, a first metal layer, and a second metal layer. The channel layer is disposed on the substrate and includes a first channel layer and a second channel layer. The first metal layer is disposed on the channel layer and includes a first gate and a second gate. The second metal layer is disposed over the first metal layer and includes a first source, a first drain, and a second source. The first gate, the first source, the first drain, and the first channel layer form a first transistor. The second gate, the second source, the first drain, and the second channel layer form a second transistor. The first transistor and the second transistor are connected in parallel.

Abstract: A cholesteric liquid crystal display device and a control method for reducing inrush current when clearing the screen. The cholesteric liquid crystal display device includes a cholesteric liquid crystal display panel and a liquid crystal drive unit. The cholesteric liquid crystal display panel has a plurality of pixel matrix. After the liquid crystal drive unit receives a data latch enable signal, it applies a reset voltage to the plurality of pixel matrix to clear the screen displayed on the cholesteric liquid crystal display panel. The input time of the data latch enable signal received by the liquid crystal driving unit is different, and the corresponding signal time portion is shifted with each other.

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

Abstract: A circuit driving substrate, display panel and a display driving method are provided. The circuit driving substrate includes a pixel array, a first switching circuit, a second switching circuit, a first driving circuit and a second driving circuit. The first switching circuit is coupled to the pixel array through a plurality of gate lines, and receives a first switching signal. The second switching circuit is coupled to the pixel array through the gate lines, and receives a second switching signal. The first driving circuit is coupled to the first switching circuit and configured to output the first voltage signal to the first switching circuit. The second driving circuit is coupled to the second switching circuit and configured to output a second voltage signal to the second switching circuit. The first switching circuit and the second switching circuit selectively provide the first voltage signal or the second voltage signal.

Abstract: A display device includes a substrate, a transistor, a pixel electrode, a first conductive layer and a second conductive layer. The transistor is disposed on the substrate. The pixel electrode is disposed on the substrate. The pixel electrode is electrically connected to the transistor. The first conductive layer is disposed on the pixel electrode. The first conductive layer has a first slit. The second conductive layer is disposed on the pixel electrode. The second conductive layer has a second slit. The first slit and the second slit are overlapped with the pixel electrode.

Abstract: A method of modifying an integrated circuit layout includes determining whether a first conductive line and a second conductive line are subject to a parasitic capacitance above a parasitic capacitance threshold. The method further includes adjusting the integrated circuit layout by moving the first conductive line in the integrated circuit layout in response to determining to move the first conductive line. The method further includes inserting an isolation structure between the first and second conductive lines in the integrated circuit layout in response to determining not to move the first conductive line.

Abstract: According to some embodiments of the present disclosure, a display device includes an active pattern including a metal oxide, a gate electrode overlapping the active pattern, a first capacitor electrode spaced apart from the active pattern and including a conductive oxide, and a second capacitor electrode on the first capacitor electrode.

Abstract: An array substrate and a manufacturing method therefor, an organic light emitting diode display device and a display substrate are provided. The array substrate includes: a base substrate and a first color sub-pixel and a second color sub-pixel on the base substrate. The first color sub-pixel includes a first driving transistor, the second color sub-pixel includes a second driving transistor, and a channel width-length ratio of the first driving transistor is greater than a channel width-length ratio of the second driving transistor.

Abstract: An array substrate and a manufacturing method thereof and a display device are provided. The array substrate includes a base substrate, a polarizer, a plurality of active elements, a first organic protective layer and a first inorganic protective layer. The polarizer is located on a first side of the base substrate; the plurality of active elements are arranged in an array form and provided on a second side of the base substrate opposite to the first side; the first organic protective layer is located on a side of the polarizer facing away from the base substrate and covers the polarizer; and the first inorganic protective layer is located on a side of the first organic protective layer facing away from the polarizer and covers the first organic protective layer.

Abstract: The present invention discloses a light sensing unit of a light sensing device including a light sensing element and a switching element. The light sensing element includes a gate, a semiconductor layer, a gate insulating layer, a source, and a drain. The gate and the semiconductor layer are disposed on a substrate, the gate insulating layer separates the gate from the semiconductor layer, and the source and the drain are connected to the semiconductor layer respectively. At least one of the source and the drain are formed of a light-transmissive conductive layer. The semiconductor layer is disposed between one of the source and the drain and the gate, and when viewed along a normal direction of the substrate, the gate overlaps the one of the source and the drain, and the gate does not overlap another one of the source and the drain.

Abstract: An object of one embodiment of the present invention is to propose a memory device in which a period in which data is held is ensured and memory capacity per unit area can be increased. In the memory device of one embodiment of the present invention, bit lines are divided into groups, and word lines are also divided into groups. The word lines assigned to one group are connected to the memory cell connected to the bit lines assigned to the one group. Further, the driving of each group of bit lines is controlled by a dedicated bit line driver circuit of a plurality of bit line driver circuits. In addition, cell arrays are formed on a driver circuit including the above plurality of bit line driver circuits and a word line driver circuit. The driver circuit and the cell arrays overlap each other.

Abstract: A display assembly includes a communications box and one or more electronic display subassemblies attached to a mounting structure. The communications box is located above the one or more electronic display subassemblies and has a front panel and a rear panel, at least one of which comprises fabric for ambient air to travel through to cool electronic equipment located within.

Abstract: A lateral semiconductor controlled rectifier (SCR) includes a pwell and an nwell A plurality of p+ contact regions connect to the pwell and are spaced apart from one another by a dielectric material along a width of the pwell. There are a plurality of n+ contact regions connect to the nwell and are spaced apart from one another by dielectric material along a width of the nwell.

Abstract: A display device includes: a substrate; sub-pixels on the substrate; data lines connected to the sub-pixels; a display driving circuit supplying data voltages to the data lines; and fan-out lines on the substrate and connecting the data lines and the display driving circuit. Each of the sub-pixels includes a first transistor including a first active layer on the substrate and including a silicon semiconductor and a first gate electrode on the first active layer, and a second transistor including a second active layer on the substrate and including an oxide semiconductor and a second gate electrode on the second active layer. The fan-out lines include first fan-out lines and second fan-out lines alternately arranged each other in one direction. The first fan-out lines are arranged on the same layer as the first gate electrode, and the second fan-out lines are arranged on the same layer as the second gate electrode.

Abstract: A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film, one pair of insulating spacers on both side walls of the gate electrode, one pair of source/drain region on the fin-shaped active region and located on both sides of the gate electrode, and a lower buffer layer between the fin-shaped active region the source/drain region. The source/drain regions include a compound semiconductor material including atoms from different groups. The lower buffer layer includes a compound semiconductor material that is amorphous and includes atoms from different groups.

Abstract: Provided is an organic light-emitting display substrate and a manufacturing method thereof, and an organic light-emitting display device. The organic light-emitting display substrate includes a display area and an opening area located at the display area. The display area includes: a base substrate; a partition pattern layer located on one side of the base substrate and including a partition wall around the opening area, the partition wall including a wall portion and a blocking portion located on one side of the wall portion away from the base substrate, an orthographic projection of the blocking portion on the base substrate covering and having an area greater than that of the wall portion on the base substrate; and an organic evaporation layer located on one side of the partition pattern layer away from the base substrate, the organic evaporation layer is discontinuous by being blocked by the partition wall.

Abstract: Provided is display substrate, including driving circuit board, and first electrode layer, insulating layer, second electrode layer, isolation layer, transparent conductive layer sequentially stacked thereon. Driving circuit board includes pixel and bonding regions. First electrode layer includes first sub-portion in bonding region and second sub-portion in pixel region. Insulating and isolation layers are partially cover bonding and pixel regions. Insulating layer has first via hole in area corresponding to first sub-portion. Isolation layer has second via hole in the area. Axes of first and second via holes coincide, first sub-portion is exposed at first and second via holes. Second electrode layer is in pixel region, coupled to second sub-portion through third via hole in area corresponding to second sub-portion. Isolation layer has fourth via hole in area corresponding to second electrode layer. Transparent conductive layer is in pixel region, coupled to second electrode layer through fourth via hole.

Abstract: A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.

Abstract: A luminescent display device includes a substrate and a thin-film transistor above the substrate. The thin-film transistor includes a semiconductor layer, a gate insulating film on the semiconductor layer, a gate electrode on the gate insulating film, a source electrode, and a drain electrode. The luminescent display device further includes an interlayer insulating film on the gate electrode, a first capacitor electrode on the interlayer insulating film in a region above the gate electrode, and a luminescent element configured to be driven by a driver to produce luminescence. The driver includes the thin-film transistor, and the first capacitor electrode and the gate electrode constitute a capacitor.