Abstract: The present invention has a pixel which includes a first switch, a second switch, a third switch, a first resistor, a second resistor, a first liquid crystal element, and a second liquid crystal element. A pixel electrode of the first liquid crystal element is electrically connected to a signal line through the first switch. The pixel electrode of the first liquid crystal element is electrically connected to a pixel electrode of the second liquid crystal element through the second switch and the first resistor. The pixel electrode of the second liquid crystal element is electrically connected to a Cs line through the third switch and the second resistor. A common electrode of the first liquid crystal element is electrically connected to a common electrode of the second liquid crystal element.

Abstract: A display device includes a first vertical power line extending in a first direction and receiving a first power source; and a first horizontal power line extending in a second direction intersecting the first direction between a first pixel and a second pixel and receiving the first power source, each of the first pixel and the second pixel includes first to third sub-pixels sequentially disposed in the first direction, the first pixel includes a first common pattern between the first sub-pixel and the second sub-pixel extending in the second direction, the first sub-pixel of the first pixel and the second sub-pixel of the first pixel share the first common pattern and are connected to the first vertical power line, and the third sub-pixel of the first pixel shares the first horizontal power line with the first sub-pixel of the second pixel.

Abstract: A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.

Abstract: The present disclosure provides a pixel driving circuit, a driving method thereof, and a display panel. A switching transistor and a sensing transistor are controlled with the same scanning line. In a detection stage, a voltage of a scanning signal line is adjusted to enable the sensing transistor to be turned on and the switching transistor to be turned off, so that a gate and a source of the driving transistor are in a floating state. A storage capacitor maintains a gate-source potential difference of the driving transistor to be stable, thereby it can accurately compensate for the mobility of the driving transistor.

Abstract: A display apparatus having an excellent boosting function is provided. The display apparatus is provided with a pixel having a function of adding data (a boosting function). A capacitor for boosting voltage is provided in the pixel, and data is added by capacitive coupling to be supplied to a display device. The capacitor for boosting voltage and a capacitor for retaining data are placed on top of each other, whereby the capacitance value of the capacitor for boosting voltage can be increased. Thus, the pixel can have an excellent boosting function, without significantly losing the aperture ratio or definition.

Abstract: Provided are display panels and display apparatus. The display panel includes a driving array layer including a pixel circuit and a driving circuit configured to provide a control signal to the pixel circuit. The pixel circuit includes first and third transistors. The driving circuit includes second and fourth transistors. The first to fourth transistors include an active layer including silicon, an active layer including oxide semiconductor, an active layer including oxide semiconductor, and an active layer including silicon. The first and the third transistors are switching transistors of the pixel circuit, |W1/L1-W4/L4|<|W2/L2-W3/L3|; or the first and the third transistors are a driving transistor and a switching transistor of the pixel circuit, respectively, |W1/L1-W4/L4|>5*|W2/L2-W3/L3|; or the first and third transistors are a switching transistor and a driving transistor of the pixel circuit, respectively, 5*|W1/L1-W4/L4|<|W2/L2-W3/L3|.

Abstract: A pixel structure and a display panel are provided. The pixel structure includes a first pixel electrode, a first longitudinal signal line, and a second longitudinal signal line. The first pixel electrode includes a first main pixel area and a first sub-pixel area. The first longitudinal signal line includes a first main line and a first secondary-line. The second longitudinal signal line includes a second main line and a second secondary-line. The first main line and the second main line are arranged in the first main pixel area, and the first secondary-line and the second secondary-line are arranged in the first sub-pixel area.

Abstract: An organic light-emitting display apparatus includes: a first pixel electrode; a second pixel electrode spaced apart from the first pixel electrode and comprising a top surface that is flatter than a top surface of the first pixel electrode; a first color emission layer on the first pixel electrode; and a second color emission layer on the second pixel electrode and configured to emit light having a wavelength longer than a wavelength of light emitted by the first color emission layer.

Abstract: A display panel and a manufacturing method thereof are provided. The display panel includes a substrate, a gate layer including a plurality of gate units disposed over the substrate, a first insulating layer disposed on the gate layer, and a metal shielding layer disposed on the first insulating layer. The metal shielding layer includes metal shielding units corresponding to the gate units. By setting the metal shielding layer, an electric shielding principle is used to reduce an influence of an alternating current signal between the gate units and improve display performance.

Abstract: According to one embodiment, a display device includes a first substrate and a second substrate opposed to the first substrate. The first substrate includes an insulating substrate, a switching element located on the insulating substrate and having a relay electrode, an organic insulating film covering the switching element and having a first through-hole penetrating to the relay electrode, a pixel electrode being in contact with the relay electrode via the first through-hole, a first capacitance insulating film covering the pixel electrode, a filler having an insulation property filled in at least the first through-hole and located on the pixel electrode and the first capacitance insulating film, and a common electrode covering the filler.

Abstract: A display device comprises a substrate including display and peripheral areas, a semiconductor element, a pixel structure, and a plurality of dummy patterns. The semiconductor element is disposed in the display area on the substrate, and the pixel structure is disposed on the semiconductor element. The dummy patterns which have stacked structure are disposed in the peripheral area on the substrate, and contain a material identical to a material constituting the semiconductor element. The dummy patterns are arranged in a grid shape in different layers, and each of the dummy patterns includes a central portion and an edge portion surrounding the central portion. The edge portions of dummy patterns which are adjacent to each other in the different layers among the dummy patterns are overlapped each other in a direction from the substrate to the pixel structure.

Abstract: A displaying substrate, a manufacturing method thereof, and a display panel. The displaying substrate includes: a first capacitor electrode at least partially located in luminous zones, a buffer layer covering the first capacitor electrode, and a second capacitor electrode and an active layer that are disposed on the buffer layer and do not overlap with each other, wherein the active layer is located in a non-luminous zone, and the first capacitor electrode, the buffer layer and the second capacitor electrode form a storage capacitor.

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

Abstract: A display panel includes a fingerprint recognition layer, a light path layer, and a display panel main body. The fingerprint recognition layer includes a plurality of transistors disposed in an array and a plurality of photosensors electrically connected to the plurality of transistors. Active layer patterns of the transistors and photosensitive layer patterns of the photosensors are disposed at a same layer. The amorphous silicon layers of the transistors and the photosensors are made in a single process, thereby reducing the photomask and manufacturing process.

Abstract: A display device includes: a substrate; a first active pattern on the substrate; a second active pattern on the first active pattern; a first upper electrode on the second active pattern and having an island shape; and a first signal line on the first upper electrode, being electrically connected to the first upper electrode, and having an electrical resistance smaller than an electrical resistance of the first upper electrode.

Abstract: There is provided a display device. The display device includes a first data line on a first interlayer insulating layer over a substrate, a first power line and a second power line on a second interlayer insulating layer, the second interlayer insulating layer covering the first data line, and a plurality of pixels. A first pixel among the plurality of pixels includes a display element including a pixel electrode, an opposite electrode, and an intermediate layer between the pixel electrode and the opposite electrode, the second power line being connected to the opposite electrode, and a driving thin film transistor between the substrate and the display element and including a driving semiconductor layer, a driving gate electrode, a driving source electrode, and a driving drain electrode, the first interlayer insulating layer covering the driving gate electrode, and the first power line being connected to the driving source electrode.

Abstract: A display substrate, includes a plurality of subpixels arranged in a matrix. Each subpixel is provided with a pixel driver circuit that includes a plurality of thin film transistors and a storage capacitor. The storage capacitor of a present subpixel among the plurality of subpixels and the storage capacitor of an adjacent subpixel adjacent to the current subpixel are disposed in a shared capacitance region of the present subpixel and the adjacent subpixel, and the storage capacitor of the present subpixel and the storage capacitor of the adjacent subpixel are stacked.

Abstract: An organic light emitting diode display includes: a substrate including a display area and a non-display area adjacent to the display area; a pixel thin film transistor positioned in the display area of the substrate; a first data wire positioned on the pixel thin film transistor; a second data wire positioned on the first data wire; an organic light emitting element positioned on the second data wire and electrically connected to the pixel thin film transistor through the first data wire and the second data wire; a circuit unit positioned in the non-display area of the substrate and including a circuit thin film transistor electrically connected to the pixel thin film transistor; and a common power supply line overlapping at least part of the circuit unit, electrically connected to the organic light emitting element, and formed on a same layer as the second data wire.

Abstract: Provided is pixel including a first transistor including a first drain region electrically connected to a light emitting diode, a first gate electrode, a first channel region overlapping the first gate electrode, and a first source region, a first sub-transistor including a first sub-gate electrode, a first sub-channel region overlapping the first sub-gate electrode, a first sub-drain region connected to the first gate electrode, and a first sub-source region, a second sub-transistor including a second sub-gate electrode, a second sub-channel region overlapping the second sub-gate electrode, a second sub-drain region connected to the first sub-source region, and a second sub-source region, and a shielding pattern overlapping the first sub-source region and the second sub-drain region and not overlapping the first sub-channel region, wherein a width of the first sub-channel region is greater than a width of the second sub-channel region.

Abstract: This invention provides a resin composition for preparing an allylphenol-maleimide copolymer used for a protective film for an electronic component including: (A) an allyl group-containing phenol compound having a rigid structure; (B) an N-aromatic maleimide group-containing compound having a rigid structure; and (C) an N-aliphatic maleimide group-containing compound having a flexible structure.

Abstract: A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.

Abstract: The present application discloses a pixel structure and a display device. The pixel structure includes a scan line having a branch structure; and a semiconductor pattern intersecting with the scan line and the branch structure. The semiconductor pattern includes: a first channel region disposed below the scan line; a second channel region disposed below the branch structure; and doping regions respectively disposed at two sides of the first channel region and at two sides of the second channel region. Wherein, the width of the second channel region is less than the width of the first channel region. The pixel structure may improve the display performance of the display screen.

Abstract: A display apparatus having an excellent boosting function is provided. The display apparatus is provided with a pixel having a function of adding data (a boosting function). A capacitor for boosting voltage is provided in the pixel, and data is added by capacitive coupling to be supplied to a display device. The capacitor for boosting voltage and a capacitor for retaining data are placed on top of each other, whereby the capacitance value of the capacitor for boosting voltage can be increased. Thus, the pixel can have an excellent boosting function, without significantly losing the aperture ratio or definition.

Abstract: A wireless communication device transmits and receives a high-frequency signal having a first frequency as a carrier frequency. The device includes a base material made of paper, an antenna pattern of an Sn alloy formed on the base material, and an RFIC element connected electrically to the antenna pattern. Moreover, the antenna pattern including a thin wire part and a thick wire part that differ in wire width from each other.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device is manufactured by a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a first insulating layer, a third step of forming a first conductive film over the first insulating layer, a fourth step of etching part of the first conductive film to form a first conductive layer, thereby forming a first region over the semiconductor layer that overlaps with the first conductive layer and a second region over the semiconductor layer that does not overlap with the first conductive layer, and a fifth step of performing first treatment on the conductive layer. The first treatment is plasma treatment in an atmosphere including a mixed gas of a first gas containing an oxygen element but not containing a hydrogen element, and a second gas containing a hydrogen element but not containing an oxygen element.

Abstract: A display apparatus includes a substrate including a display area for displaying an image, a first thin film transistor in the display area and including a first semiconductor layer having a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode and having a first contact hole extending therethrough, and a second thin film transistor on the first interlayer insulating layer and including a second semiconductor layer having an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer. A portion of the second semiconductor layer extends into a first contact hole and is electrically connected to the first semiconductor layer.

Abstract: A display device includes: a substrate; a buffer layer on the substrate; a first active pattern and a second active pattern on the buffer layer and spaced apart from each other; a first gate insulation layer on the first active pattern and the second active pattern; a first gate electrode and a second gate electrode on the first gate insulation layer, the first gate electrode and the second gate electrode respectively overlapping the first active pattern and the second active pattern; a second gate insulation layer on the first gate electrode and the second gate electrode; and a capacitor electrode on the second gate insulation layer, the capacitor electrode overlapping the first gate electrode, wherein a permittivity of the first gate insulation layer is greater than a permittivity of the buffer layer.

Abstract: A method of fabricating a semiconductor device is described. A first material layer is formed, wherein the first material layer contains crystalline aluminum nitride or aluminum scandium nitride (AlScN) with a first Sc content. A second material layer is formed on the first material layer, wherein the second material layer contains aluminum scandium nitride (AlScN) with a second Sc content higher than the first Sc content. A third material layer is formed on the second material layer, wherein the third material layer contains aluminum scandium (AlSc).

Abstract: The application discloses a method adapted to manufacture an array substrate and a display panel. The method includes: forming a photoresist layer, a source and a drain; post-baking the photoresist layer, so that the photoresist layer flows to the position of a channel; etching a semiconductor layer to obtain a preset pattern; and peeling off the photoresist layer.

Abstract: A package structure for a power supply module, can include: a die and a capacitive element that are separated from each other and arranged on different horizontal planes with different heights along a vertical direction of the package structure; connection structures that connect to the die and to the capacitive element; where a current loop comprising at least two parallel current paths on different horizontal planes with different heights along the vertical direction of the package structure is formed; and where the current loop passes through the die, the capacitive element, and the connection structures, and directions of currents of the two parallel current paths are at least partially opposite to each other in order to decrease electromagnetic interference.

Abstract: The present disclosure discloses an evaporation method, an evaporation mask assembly, a display panel and a display device, which can reduce the complexity of the manufacturing process of the display panel and improve the yield of the display panel. The evaporation method may comprise: performing a first evaporation on a base substrate by using a first mask to form a first evaporation sub-pattern on the base substrate, wherein the first mask has a first opening area; and performing a second evaporation on the base substrate by using a second mask to form a second evaporation sub-pattern on the base substrate, wherein the second mask has a second opening area; wherein the combination of the first and second evaporation sub-patterns forms an evaporation pattern.

Abstract: A display module is provided. The display module includes a main display panel, an auxiliary display panel and a backlight module which are laminated sequentially, at least one temperature sensing circuit in the auxiliary display panel, and a control circuit coupled to the at least one temperature sensing circuit. The temperature sensing circuit is configured to generate, based on temperature of the auxiliary display panel, a temperature signal related to the temperature, and the control circuit is configured to adjust a display parameter of the main display panel based on the temperature signal.

Abstract: A resonant coil with integrated capacitance includes at least one separation dielectric layer and a plurality of conductor layers stacked in an alternating manner. Each of the plurality of conductor layers includes a first conductor sublayer and second conductor sublayer having common orientation and a sublayer dielectric layer separating the first and second conductor sublayers. Adjacent conductor layers of the plurality of conductor layers have different orientations.

Abstract: A display device is provided. The display device includes a first substrate, a first detection electrode on the first substrate, a first bank including an opening that exposes the first detection electrode, a photosensitive layer on the first detection electrode, a second detection electrode on the photosensitive layer, a first electrode on the second detection electrode, a second bank including an opening that exposes the first electrode, a light emitting layer on the first electrode, a second electrode on the light emitting layer, a first optical system between the second detection electrode and the first electrode, and a second optical system on the second electrode, wherein the first optical system and the second optical system overlap the photosensitive layer in a thickness direction of the display device.

Abstract: A double-sided emissive transparent organic light-emitting diode display and method of manufacturing the same are provided. A double-sided emissive transparent organic light-emitting diode display includes: a substrate, a plurality of pixel areas, each including, on the substrate: a light transmitting area, and a light-emitting area, the light-emitting area including: a bottom light-emitting area including a bottom-emissive organic light-emitting diode, and a top light-emitting area including: a top-emissive organic light-emitting diode, a plurality of bottom driving elements under the top-emissive organic light-emitting diode, the bottom driving elements being configured to drive the bottom-emissive organic light-emitting diode, and a plurality of top driving elements under the top-emissive organic light-emitting diode, the top driving elements being configured to drive the top-emissive organic light-emitting diode.

Abstract: A semiconductor device includes a substrate, a plurality of circuit elements on a front side of the substrate, and a first substantially spiral-shaped conductor on a back side of the substrate is provided. The device further includes a first through-substrate via (TSV) electrically connecting a first end of the substantially spiral-shaped conductor to a first one of the plurality of circuit elements, and a second TSV electrically connecting a second end of the substantially spiral-shaped conductor to a second one of the plurality of circuit elements. The device may be a package further including a second die having a front side on which is disposed a second substantially spiral-shaped conductor. The front side of the second die is disposed facing the back side of the substrate, such that the first and second substantially spiral-shaped conductors are configured to wirelessly communicate.

Abstract: A display module is provided. The display module includes a main display panel, an auxiliary display panel and a backlight module which are laminated sequentially, at least one temperature sensing circuit in the auxiliary display panel, and a control circuit coupled to the at least one temperature sensing circuit. The temperature sensing circuit is configured to generate, based on temperature of the auxiliary display panel, a temperature signal related to the temperature, and the control circuit is configured to adjust a display parameter of the main display panel based on the temperature signal.

Abstract: A light-emitting diode (LED) chip structure with a cup-like reflective element is provided. The LED chip structure comprises a substrate, an isolation element and a mesa including an LED surrounded by the isolation element. The isolation element comprises an upper isolation part and a lower isolation part. The lower isolation part is positioned in the substrate and the upper isolation part protrudes from a surface of the substrate. A reflective layer is disposed on a sidewall of the upper isolation part, and a bottom of the reflective layer does not contact the mesa. The cup-like reflective element at least includes the isolation element with the reflective layer.

Abstract: A display device including: a pixel connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor which controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first active layer including an oxide semiconductor doped with a metal.

Abstract: A display component includes a display panel. The display panel includes an array substrate and a counter substrate, and the display panel includes a display region, where the display region includes a pixel region, a transparent region, and a light shielding region. A first light shielding pattern located in the light shielding region is disposed on a side that is of the array substrate and that is away from the counter substrate, and the first light shielding pattern is disposed around the transparent region.

Abstract: The embodiments of the present invention provide a thin film transistor (TFT) device, a manufacturing method thereof, and an array substrate. A gate electrode comprises a first sub-gate electrode and a second sub-gate electrode disposed on different layers. The first sub-gate electrode is located between the active layer, the source electrode, and the drain electrode in a film thickness direction of the TFT device. The second sub-gate electrode, the source electrode, and the drain electrode are disposed on a same layer. The second sub-gate electrode comprises two gate electrode metal patterns. The two gate electrode metal patterns are spaced apart and electrically connected to a same scan line and simultaneously charge the first sub-gate electrode.

Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.

Abstract: A display device includes a circuit substrate comprising a first electrode pad and an LED chip comprising a first electrode bump that is electrically connected to the first electrode pad, and at least emitting light in a direction of the circuit substrate. The first electrode pad comprises a first light transmission region that transmits light emitted from the LED chip.

Abstract: A liquid crystal display is provided and includes first and second substrates and liquid crystal layer therebetween; pixel electrode on first substrate; pedestal metal coupled to pixel electrode; semiconductor layer substantially U-shaped and coupled to pedestal metal at first coupling portion; scan line that extends in first direction and in layer different from semiconductor layer; signal line that extends in second direction different from first direction so as to three-dimensionally cross scan line, signal line being coupled to semiconductor layer at second coupling portion; and extending portion that is part of scan line and that protrudes from scan line, the extending portion extending along signal line, wherein: in first direction along a shorter side of each pixel unit, extending portion is adjacent to pedestal metal; and in second direction along a longer side of each pixel unit, length of extending portion is smaller than length of pedestal metal.

Abstract: A gate driver on array (GOA) array substrate, a method for fabricating the same, and a display device including the same, which include a GOA driving circuit. The GOA driving circuit includes a plurality of GOA units. Each of the GOA units includes a thin film transistor array layer, a first metal layer, an insulating layer, and a second metal layer. The first metal layer has a patterned signal line at a position crossing the second metal layer. The signal line includes a trunk portion and side walls formed of two opposite sides of the trunk portion. The side walls are shaped as arc-shaped grooves.

Abstract: A device includes a substrate. A first nanostructure is over the substrate, and includes a semiconductor having a first resistance. A second nanostructure is over the substrate, is offset laterally from the first nanostructure, is at about the same height above the substrate as the first nanostructure, and includes a conductor having a second resistance lower than the first resistance. A first gate structure is over and wrapped around the first nanostructure, and a second gate structure is over and wrapped around the second nanostructure.

Abstract: An organic light emitting diode display includes: a substrate including a display area and a non-display area adjacent to the display area; a pixel thin film transistor positioned in the display area of the substrate; a first data wire positioned on the pixel thin film transistor; a second data wire positioned on the first data wire; an organic light emitting element positioned on the second data wire and electrically connected to the pixel thin film transistor through the first data wire and the second data wire; a circuit unit positioned in the non-display area of the substrate and including a circuit thin film transistor electrically connected to the pixel thin film transistor; and a common power supply line overlapping at least part of the circuit unit, electrically connected to the organic light emitting element, and formed on a same layer as the second data wire.

Abstract: In some embodiments, the present disclosure relates to a display device that includes a reflector electrode coupled to an interconnect structure. An isolation structure is disposed over the reflector electrode, and a transparent electrode is disposed over the isolation structure. Further, an optical emitter structure is disposed over the transparent electrode. A via structure extends from a top surface of the isolation structure to the reflector electrode and comprises an outer portion that directly overlies the top surface of the isolation structure. A hard mask layer is arranged directly between the top surface of the isolation structure and the outer portion of the via structure.

Abstract: An array substrate includes a base substrate, a light-shielding pattern, a buffer pattern, an active layer, a gate insulating layer and a first passivation layer provided with a first via, a second via and a third via, and a source and a drain. An entire orthographic projection of the active layer on the base substrate coincides with an orthographic projection of at least part of the buffer pattern on the base substrate. The orthographic projection of the buffer pattern on the base substrate is within a border of an orthographic projection of the light-shielding pattern on the base substrate, and its area is less than an area of the orthographic projection of the light-shielding pattern on the base substrate. One of the source and the drain is coupled to the active layer through the first via, and another one is coupled to the active layer through the second via and the light-shielding pattern through the third via.

Abstract: A thin film transistor substrate includes a substrate, a first conductive layer, a second conductive layer and a semiconductor layer. The first conductive layer is disposed on the substrate and includes a trace portion extending along a first direction and a protrusive portion extending from the trace portion. The second conductive layer is disposed on the first conductive layer and includes a wiring portion extending along a second direction. The trace portion has a first edge and a second edge opposite to the first edge, and the protrusive portion has at least one curved edge connecting with the second edge. When viewed in a third direction perpendicular to the first direction and the second direction, an interface disposes between the trace portion and the protrusive portion, a virtual extending line overlaps the second edge and the interface, and the semiconductor layer extends beyond the virtual extending line.