Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a plurality of light emitting cells including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer connected to the first conductive semiconductor layer of a first light emitting cell of the plural light emitting cells; a plurality of second electrode layers under the light emitting cells, a portion of the second electrode layers being connected to the first conductive semiconductor layer of an adjacent light emitting cells; a third electrode layer disposed under a last light emitting cell of the plural light emitting cells; a first electrode connected to the first electrode layer; a second electrode connected to the third electrode layer; an insulating layer around the first to third electrode layers; and a support member under the insulating layer.

Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

Abstract: A solid state lighting component comprising a layer having high reflectivity and/or scattering properties, the layer positioned about a solid state lighting component, and manufacturing methods of making same is disclosed. A method of increasing the luminous flux of the solid state lighting component, is also provided.

Abstract: A display apparatus includes a plurality of first wirings extending in a first direction and a plurality of second wirings extending in a second direction crossing the first direction. Differing first identification patterns are present on the plurality of corresponding first wirings to identify the plurality of first wirings, and differing second identification patterns are present on the plurality of corresponding second wirings to identify the plurality of second wirings.

Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

Abstract: A mask assembly includes a frame forming an opening, and a plurality of unit masks which form a plurality of deposition openings, the longitudinal ends of the unit masks being fixed to the frame. At least two adjacent ones of the plurality of unit masks have deposition recesses formed on both sides facing each other. The width of the deposition recesses along a width direction of the unit masks is equal to or greater than the width of the deposition openings along the width direction of the unit masks.

Abstract: An active device, a driving circuit structure, and a display panel are provided. The active device includes a gate, a gate insulation layer covering the gate, a semiconductor layer disposed above the gate, an etching stop layer disposed on the gate insulation layer and the semiconductor layer, a source, and a drain. The gate forms a meandering pattern on a substrate. The semiconductor layer has an area substantially defining a device region where the active device is. The etching stop layer has a first contact opening and a second contact opening. The first contact opening and the second contact opening separated from each other and both exposing the semiconductor layer. The source and the drain separated from each other are disposed on the etching stop layer and in contact with the semiconductor layer through the first contact opening and the second contact opening, respectively.

Abstract: A method of repairing a defective pixel in a display apparatus that includes forming an insulating layer to cover the plurality of second signal wires, cutting both sides of a region of the corresponding second signal wire of the defective pixel and the insulating layer to form both sides of a cut region, forming contact holes adjacent to the both sides of the cut region, respectively, such that an upper portion of the corresponding second signal wire is exposed, forming a repair metal layer on the insulating layer to contact the contact holes and the second signal wire, and forming a repair insulating layer to cover the repair metal layer.

Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

Abstract: At least one of the pixels has a first region and a second region that are the same in color but different in viewing angle characteristic, and includes a switching circuit configured to independently turn on or off each of the organic EL elements provided in the respective first and second regions.

Abstract: In the light-emitting display device according to the present invention, a side-contact structure is adopted in order to secure a TFT characteristic in a linear region (on-current). In a TFT configuring a switching transistor, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is increased. In contrast, in a TFT configuring a driving transistor, in order to maintain an on current, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is reduced. This configuration is manufactured using a half-tone mask. With this, it is possible to suppress the off-current in the switching transistor, while securing the on-current in the driving transistor.

Abstract: Embodiments of the present invention relate to a display device, an array substrate, and a thin film transistor. The thin film transistor comprises a gate, an active layer and a gate insulating layer disposed between the gate and the active layer, the active layer is an oxide semiconductor, and the gate insulating layer comprises at least one layer of inorganic insulating thin film. With the gate insulating layer of the thin film transistor, it is possible that an adverse effect on the oxide semiconductor given by hydrogen-containing groups is effectively avoided, stability of the whole TFT device is enhanced to the most extent, and yield of final products is increased.

Abstract: An LED light emitter includes a single emitter structure having a substrate with a plurality of light emitting diodes (LEDs) arranged thereon, wherein the plurality of LEDs includes at least one first LED die that produces a first color light, and at least one second LED die that produces a second color light. The LED light emitter also includes a total internal reflection (TIR) lens positioned to collect light emitted from the single emitter structure and adapted to mix the light from the plurality of LEDs to produce a uniform light. The plurality of LEDs are selected such that the light output by the LED light emitter has a desired color temperature when an equal current is supplied to all of the plurality of LEDs.

Abstract: A semiconductor light emitting device includes a substrate, a first epitaxial structure, a first substantially transparent conducting layer, a second epitaxial structure, a second substantially transparent conducting layer, and a substantially transparent insulating layer. The first epitaxial structure is over the substrate and includes a first doped layer, a first light emitting layer, and a second doped layer. The first substantially transparent conducting layer is coupled to the second doped layer. The second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. The second substantially transparent conducting layer is coupled to the fourth doped layer. The substantially transparent insulating layer is between the first substantially transparent conducting layer and the second substantially transparent conducting layer.

Abstract: A plural semiconductive oxides TFT (sos-TFT) provides improved electrical functionality in terms of charge-carrier mobility and/or threshold voltage variability. The sos-TFT may be used to form a thin film transistor array panel for display devices. An example sos-TFT includes: an insulated gate electrode; a first semiconductive oxide layer having a composition including a first semiconductive oxide; and a second semiconductive oxide layer having a different composition that also includes a semiconductive oxide. The first and second semiconductive oxide layers have respective channel regions that are capacitively influenced by a control voltage applied to the gate electrode. In one embodiment, the second semiconductive oxide layer includes at least one additional element that is not included in the first semiconductive oxide layer where the additional element is one of gallium (Ga), silicon (Si), niobium (Nb), hafnium (Hf), and germanium (Ge).

Abstract: A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

Abstract: A light emitting element array chip includes first and second light emitting element rows including light emitting elements that are arranged in a main scanning direction in a zigzag, a first light emission signal line transmitting a light emission signal for allowing the light emitting elements forming the first light emitting element row to emit light, and a second light emission signal line transmitting a light emission signal for allowing the light emitting elements forming the second light emitting element row to emit light, wherein the first light emission signal line or the second light emission signal line is arranged in the main scanning direction between the first light emitting element row and the second light emitting element row and is provided in regions between the light emitting elements forming the first light emitting element row and between the light emitting elements forming the second light emitting element row.

Abstract: A display panel includes a base substrate, a common electrode, a liquid crystal layer, a pixel electrode, a gate line, a data line, a switching element, a color filter and a light blocking pattern. The base substrate includes a trench. The common electrode is disposed in the trench. The liquid crystal layer is disposed in the trench and disposed on the common electrode. The pixel electrode is disposed on the base substrate and the liquid crystal layer. The gate line, the data line and the switching element are disposed on the base substrate and the pixel electrode. The color filter and the light blocking pattern are disposed on the gate line, the data line and the switching element.

Abstract: Disclosed are an array substrate and a relevant display panel. The array substrate has a display area and a peripheral circuit area outside the display area. The array substrate comprises a pixel array and a peripheral circuit. The pixel array comprises thin film transistors and pixel electrodes. The pixel electrodes are graphene thin films. The array substrate and the relevant display panel according to the present invention have low manufacture cost.

Abstract: RC delay in gate lines of a wide display is reduced by using a low resistivity conductor in the gate lines and a different conductor for forming corresponding gate electrodes. More specifically, a corresponding display substrate includes a gate line made of a first gate line metal, a data line made of a first data line metal, a pixel transistor and a first connection providing part. The pixel transistor includes a first active pattern formed of polycrystalline silicon (poly-Si) and a first gate electrode formed there above and made of a conductive material different from the first gate line metal. The first connection providing part connects the first gate electrode to the gate line. On the other hand, the source electrode is integrally extended from the data line.

Abstract: A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs.

Abstract: A light-emitting diode (LED) device includes at least one LED unit. Each LED unit includes at least one LED. Each LED includes an n-side nitride semiconductor layer, a p-side nitride semiconductor layer, and an active layer that is located between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer. The active layer is includes one or more well layers. At least one of the well layers has a multilayered structure.

Abstract: An organic EL display including a plurality of pixels each having, in order from a substrate side, a first electrode, an organic layer including a light emission layer, and a second electrode; an auxiliary wiring disposed in a periphery region of each of the plurality of pixels and conducted to the second electrode; and another auxiliary wiring disposed apart from the auxiliary wiring at least in a part of outer periphery of a formation region of the auxiliary wiring in a substrate surface.

Abstract: An array substrate for a display device and its fabrication method are disclosed. The array substrate for a display device includes: a gate wiring and a gate electrode connected to the wiring formed on a substrate; a gate insulating layer formed on the gate electrode; an active layer and a barrier metal layer stacked with the gate insulating layer interposed therebetween on the gate electrode; a data wiring formed on the barrier metal layer and source and electrodes connected to the data wiring; a passivation film formed on the source and drain electrodes and the data wiring and having a contact hole exposing a portion of the drain electrode, the barrier metal layer and the active layer; and a pixel electrode formed on the passivation film and being in contact with the drain electrode and the barrier metal layer including the active layer.

Abstract: An organic electroluminescent display device includes a bottom substrate, a covering substrate, a pixel controlling unit, a first organic light emitting unit, and a second organic light emitting unit. The covering substrate is disposed oppositely to the bottom substrate. The pixel controlling unit is disposed between the bottom substrate and the covering substrate. The first organic light emitting unit is disposed between the pixel controlling unit and the covering substrate. The second organic light emitting unit is disposed between the pixel controlling unit and the bottom substrate. The pixel controlling unit is electrically connected to the first organic light emitting unit and the second organic light emitting unit.

Abstract: A method and an apparatus for forming an organic material pattern in a desired pattern on a substrate to improve device durability and image quality characteristics, an organic light emitting display apparatus, and a method of manufacturing an organic light emitting display apparatus, are provided. The apparatus includes a heater overlapping with a region of the substrate different from another region of the substrate in which the organic material pattern is to be formed, a power source for applying a voltage to the heater, and wiring for electrically connecting the power source with the heater.

Abstract: An organic light emitting display device including: a first emission area including a first organic light emitting diode; a second emission area arranged adjacent to the first emission area and not overlapping with the first emission area, the second emission area including a second organic light emitting diode; a pixel circuit unit electrically connected to the first organic light emitting diode and the second organic light emitting diode; and a transmissive area adjacent to the first and second emission areas and not overlapping with the first and second emission areas, the transmissive area configured to transmit external light therethrough.

Abstract: A panel is disclosed, in which, a patterned semiconductor layer is formed on an insulation layer. The patterned semiconductor layer includes a portion corresponding to an electrode and another portion corresponding to a wiring trace. The portion corresponding to the electrode may be formed as, for example, a channel, and the other portion corresponding to the wiring trace may protect the wiring trace during fabrication process or in the structure from scratching or corrosion.

Abstract: A display device includes: a substrate, a plurality of signal lines disposed on the substrate, at least one insulating layer disposed on the substrate, and a plurality of location references disposed on the substrate and in the same layer level as at least one of the signal lines, wherein arrangement of the plurality of location references varies depending on relative locations of the location references on a screen of the display device.

Abstract: The present invention belongs to the technical field of semiconductor devices and relates to a brightness-adjustable illuminator and an array and the manufacturing methods thereof. The illuminator is comprised of a semiconductor substrate, a MOSFET and a light-emitting diode that are located on the semiconductor substrate. The light-emitting diode (LED) and the control element (MOSFET) thereof are integrated on the same chip, so a single chip is capable of realizing the image transmission. An illuminator array may consist of a plurality of illuminators. Meanwhile, the invention also discloses a method for manufacturing the illuminator. Therefore, the projection equipment manufactured by the technology of the present invention has the advantages of small size, portability, low power consumption, etc. Furthermore, the use of the integrated circuit chip greatly simplifies the system of the projection equipment, reduces the production cost and greatly enhances the pixel quality and brightness.

Abstract: An organic light-emitting display device includes a thin film transistor on a substrate, a first wiring and a second wiring overlapping each other, the first and second wirings being at different heights relative to the substrate and being connected to the thin film transistor, and a plurality of insulating layers between the first wiring and the second wiring.

Abstract: An organic light-emitting display apparatus including: a substrate; a first electrode on the substrate; a second electrode on the first electrode; an intermediate layer between the first electrode and the second electrode, the intermediate layer being electrically connected with the first electrode and the second electrode, and including an organic emission layer; and a light reflection member overlapping a portion of the intermediate layer, the portion of the intermediate layer being less than an entire region of the intermediate layer.

Abstract: A display panel includes a substrate, a plurality of bottom electrodes, an isolation layer, a plurality of light emitting layers, a top electrode, and at least one first auxiliary electrode. The bottom electrodes and the isolation layer are disposed on the substrate. The isolation layer has a plurality of pixel region openings and at least one buffer region. Each of the pixel region openings respectively exposes the corresponding bottom electrode. The buffer region is disposed between two adjacent pixel region openings. The light emitting layers are respectively disposed on the corresponding bottom electrodes. The top electrode covers the light emitting layers, the isolation layer, and the buffer region. The first auxiliary electrode is disposed in the buffer region.

Abstract: An optical arrangement and a solid-state lighting system comprise an optical element having at least one lens where the lens has a faceted surface defining a plurality of facets. An LED light source comprises a plurality of LED chips and is arranged relative to the faceted surface such that the plurality of facets are disposed asymmetrically relative to the plurality of chips such that mixing of light from the plurality of LED chips occurs via the surface.

Abstract: A flexible active device array substrate including a flexible substrate, an active device array layer, a barrier layer, and a plurality of pixel electrodes is provided. The active device array layer is disposed on the flexible substrate. The barrier layer covers the active device array layer. The barrier layer includes a plurality of organic material layers and a plurality of inorganic material layers. The organic material layers and the inorganic material layers are alternately stacked on the active device array layer. The pixel electrodes are disposed on the barrier layer, and each of the pixel electrodes is electrically connected to the active device array layer.

Abstract: A high-voltage alternating current (AC) light-emitting diode (LED) structure is provided. The high-voltage AC LED structure includes a circuit substrate and a plurality of high-voltage LED (HV LED) chips. Each one of the HV LED chips includes a first substrate, an adhering layer, first ohmic contact layers, epi-layers, a first insulating layer, at least two first electrically conducting plates, at least two second electrically conducting plates, and a second substrate. The HV LED chips manufactured by a wafer-level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

Abstract: The display device includes a gate electrode, a gate insulating film provided over the gate electrode, a semiconductor film provided over the gate insulating film to overlap with the gate electrode, an island-shaped first insulating film provided over the semiconductor film to overlap with the gate electrode, a first conductive film provided over the semiconductor film, a pair of second conductive films which is provided over the semiconductor film and between which the first insulating film is sandwiched, and a second insulating film provided over the first insulating film, the first conductive film, and the pair of second conductive films. In the second insulating film and the semiconductor film, an opening portion which is positioned between the first conductive film and the one or the other of the pair of second conductive films is provided.

Abstract: Display substrates are disclosed. In one aspect, display substrates include a first signal line, a second signal line, a first detour signal line and a second detour signal line. The first signal line includes a first region and a pair of second regions disposed on opposite sides of the first region. The pair of second regions are spaced apart from the first region. The second signal line crosses the first signal line. The second signal line includes a third region and a pair of fourth regions disposed on opposite sides of the third region. The pair of fourth regions are spaced apart from the third region. The first detour signal line electrically connects the pair of second regions to each other. The second detour signal line electrically connects the pair of fourth regions to each other. Related methods are also disclosed.

Abstract: A flexible display apparatus is disclosed. The flexible display apparatus includes: a substrate on which a display unit for displaying an image, a non-display area formed outside the display unit, and at least one pad for inputting an electrical signal to the display unit are located; and a circuit board including circuit terminals to be electrically connected to the at least one pad. A stiffener including a plurality of reinforcement lines that are patterned to reduce or prevent thermal deformation of the substrate is formed on the substrate.

Abstract: A plurality of input terminals (4, 4a, 17) provided on a surface of a common electrode substrate (3) which surface is opposed to a TFT substrate (2) are provided so as to be opposed to a plurality of output terminals (6) provided on an external circuit substrate (5). The plurality of input terminals (4, 4a, 17) are overlapped with the plurality of output terminals (6) when the plurality of input terminals (4, 4a, 17) and the plurality of output terminals (6) are viewed in one plane, but the plurality of input terminals (4, 4a, 17) are formed so as not to overlap the TFT substrate (2). The plurality of input terminals (4, 4a, 17) and a drive circuit are electrically connected via a conductor provided between the TFT substrate (2) and the common electrode substrate (3).

Abstract: The present invention provides a TFT-LCD array substrate having a gate-line metal layer, a data-line metal layer crossing the gate-line metal layer and a plurality of layers covering a periphery of the gate-line metal layer and the data-line metal layer; the gate-line metal layer has first gate lines and second gate lines parallel and alternately arranged, the date-line metal layer has first data lines and second data lines parallel and alternately arranged; the first gate line and the second gate line are electrically connected; the first data line and the second data line are electrically connected. The present invention further provides a manufacturing method of the TFT-LCD array substrate. Implementing the TFT-LCD array substrate and the manufacturing method can reduce the occurrence of line-broken in the active array of TFT-LCD, increase the aperture ratio of the product and enhance yield rate of the products.

Abstract: A pixel structure having an SMII (semiconductor-metal-insulator-ITO) capacitor is provided. Specifically, a partial region of a transparent electrode layer corresponding to a semiconductor layer is removed, so as to eliminate parasitic capacitance between the transparent electrode layer and the semiconductor layer, prevent defects (e.g., waterfall, image sticking, etc.) from occurring on the display frame, and improve the display quality.

Abstract: The disclosure provides a hybrid display device, comprising: a substrate, wherein the substrate comprises a first surface and a second surface; a TFT array layer formed on the first surface of the substrate; a first display device formed on the TFT array layer; and a second display device formed on the second surface of the substrate, wherein there exists a corresponding relationship between a dielectric constant (k) of the substrate and a thickness (t) of the substrate to drive at least one of the first display device and the second display device, or to drive both of the first display device and the second display device by the TFT array layer, especially the TFT array layer actively drive the first display device, the second display device or combinations thereof. The dielectric constant of the substrate is about 1-100 and the thickness of the substrate is about 0.1-60 ?m.

Abstract: A light-emitting device having at least one spacer located at a bottom surface is disclosed. In two other embodiments, an electronic display system and an electronic system having such light-emitting device are disclosed. The light-emitting device comprises a plurality of leads, a light source die, and a body. The body encapsulates a portion of the plurality of leads and the light source die. The body has a least one side surface and a bottom surface. The at least one spacer is located at the bottom surface. In use, the light-emitting device is attached to a top surface of a substrate. The spacer is configured to create an air vent between the bottom surface and the top surface of the substrate when the light-emitting device is attached to, and the spacer is in contact with the substrate.

Abstract: A thin-film transistor array includes first and second bottom-gate transistors, a passivation film, a conductive oxide film below the passivation film, and a relay electrode between a first conductive material in a same layer as a first electrode of the first transistor and a second conductive material in an electroluminescence layer. A first line is in a layer lower than the passivation film and a second line is above the passivation film. A terminal to which an external signal is input is provided in a periphery of the substrate in the same layer as the first electrode. The conductive oxide film covers an upper surface of the terminal and is between the relay electrode and the first conductive material. The relay electrode is formed in a same layer and comprises a same material as the second line.

Abstract: Provided is a display apparatus using an organic EL device in which blur in a display image to be a problem for the display apparatus is reduced while propagating light propagating through a high-refractive-index transparent layer is efficiently extracted outside. The display apparatus has a configuration in which a high-refractive-index transparent layer is provided on a light exit side of the organic EL device, a light extraction structure is provided on the high-refractive-index transparent layer so as to surround each of subpixels, a visible light absorbing member is arranged between pixels adjacent to each other, and the visible light absorbing member is not arranged in a region between subpixels adjacent to each other within a pixel.

Abstract: A light emitting device includes: a wiring including an AuGeNi layer; and a semiconductor light emitting element bonded to the surface of the AuGeNi layer with the aid of intermolecular force, and electrically connected to the wiring.

Abstract: A manufacturing method of a thin film transistor includes: forming semiconductor layers for a plurality of thin film transistors over a substrate; forming an insulating layer covering the semiconductor layers; and forming a metal layer over the insulating layer. The method further includes: patterning the metal layer to form mask patterns; doping first ions using a first mask pattern among the mask patterns into a first semiconductor layer among the semiconductor layers to simultaneously form source region/a drain regions and an active region of the first thin film transistor; and doping second ions using a second mask pattern among the mask patterns into a second semiconductor layer among the semiconductor layers to form a source region and a drain region of the second thin film transistor.

Abstract: Provided is a semiconductor light emitting device which includes a number of hexagon-shaped semiconductor light emitting elements formed two-dimensionally, and in which the positive electrodes and the negative electrodes are formed on its light outputting surface side lest the light outputting efficiency should decrease. A mask 11 for selective growth is formed on a substrate 1 for growth, and an AlN buffer layer 2 is formed in regions from each of which a part of the mask 11 for selective growth is removed. An undoped GaN layer 3, an n-type GaN layer 4, an active layer 5 and a p-type GaN layer 6 are sequentially stacked on the AlN buffer layer 2. An isolation groove A for isolating the elements from one another is formed.

Abstract: A display device includes a plurality of main pixels. Each main pixel includes a plurality of sub-pixels. At least two of the sub-pixels emit light of different colors. The at least two sub-pixels are different in size.