Abstract: A structure and a method for encapsulating a solid-state lighting chip (1) are provided. The structure includes the following parts: a heat sink base (2) is provided; a single solid-state lighting chip (1) or multiple solid-state lighting chips distributed as an array are positioned or packaged on the heat sink base (2); the lighting surface of the solid-state lighting chip (1) is set as a bare surface; a single alignment unit (5) or multiple alignment units distributed as an array are positioned above the solid-state lighting chip (1) and aligned with the solid-state lighting chip (1), in order to output a nearly parallel light which is aligned from the light of the solid-state lighting chip (1). A light source device or a lamp device with the light source device using the encapsulating structure or the method, has the advantages of low levels of light expansion, and high brightness, high power light output with low cost.

Abstract: An organic electroluminescent display device including a plurality of scan lines and a plurality of data lines crossing the scan lines, a plurality of pixels at regions defined by the scan lines and the data lines, and one or more thin-film transistors (TFTs) for selectively applying voltages to each of the pixels, wherein the data lines are successively located at a side of the pixels, and a first TFT of the TFTs is located at least partially between an area corresponding to an nth data line of the data lines and an area corresponding to an (n?1)th data line of the data lines, the nth data line and the (n?1)th data line being successively positioned.

Abstract: An array substrate includes: a plurality of display areas, an outer area of the display area, in which a common wiring and an external connection terminal, which is connected to one of the scanning wiring, the signal wiring, and the common wiring, are provided; a connection wiring, which connects the external connection terminal with the common wiring of an adjacent display panel; and a connection part, which has a contact hole provided at the common wiring of the adjacent display panel, wherein the connection wiring is disposed across the cutting position of the insulation substrate and is connected to the contact hole at the connection part, and wherein the connection part is disposed at an area, at which a sealing member to bond an opposite substrate disposed to face the display area, or the inner side of the sealing member, which is the display area side.

Abstract: An array substrate includes a substrate, a dummy pad and a driving signal output line. The substrate includes a display area displaying an image, and a peripheral area surrounding the display area. The dummy pad extends along a first direction in the peripheral area of the substrate, and includes a first protrusion portion protruding from an end portion of the dummy pad along the first direction. The driving signal output line extends along a second direction crossing with the first direction, is disposed adjacent to the dummy pad, and provides an external signal. Accordingly static electricity provided to the driving signal output line flows into the dummy pad having the first protrusion portion, so that static electricity may be prevented from flowing into the display area.

Abstract: An organic light emitting device is disclosed. In one embodiment, the device includes a plurality of pixels formed on a substrate, wherein each of the pixels includes: a first electrode layer formed on the substrate; an organic emission layer formed on the first electrode layer and a second electrode layer formed on the organic emission layer. Further, at least one of the first electrode layers of the pixels is externally patterned.

Abstract: A light-emitting device includes a power feeding line to which a predetermined voltage is supplied; a light-emitting element formed of a first electrode, a second electrode, and a light-emitting layer interposed between the first electrode and the second electrode; and a driving transistor that controls the amount of current supplied to the light-emitting element from the power feeding line. The power feeding line includes a portion interposed between the first electrode and the driving transistor.

Abstract: An array substrate for a display device and its fabrication method are disclosed. The array substrate for a display device includes: a gate wiring and a gate electrode connected to the wiring formed on a substrate; a gate insulating layer formed on the gate electrode; an active layer and a barrier metal layer stacked with the gate insulating layer interposed therebetween on the gate electrode; a data wiring formed on the barrier metal layer and source and electrodes connected to the data wiring; a passivation film formed on the source and drain electrodes and the data wiring and having a contact hole exposing a portion of the drain electrode, the barrier metal layer and the active layer; and a pixel electrode formed on the passivation film and being in contact with the drain electrode and the barrier metal layer including the active layer.

Abstract: An array substrate and method for manufacturing the same is provided, wherein a data line is composed of first and second segments connected by a contact pad. First and second insulation layers are disposed between the first segment of the data line and a shielding electrode. In addition, the first insulation layer is disposed between the second segment of the data line and a gate line in their overlapping area. Accordingly, the coupling effect between the conductive layers can be reduced. For example, the RC delay problem due to parasitic capacitance between the shielding electrode and the data line is solved. As a result of the design of the two insulator layers between the first segment of the data line and the shielding electrode, the shorting between the conductive layers can also be simultaneously solved and the product yield can be increased.

Abstract: A TFT array substrate includes a plurality of pixels arranged in a matrix, in which the pixel includes a thin film transistor, a pixel electrode conductively connected to a drain electrode, and a common electrode that is formed opposite the pixel electrode with an insulation film interposed therebetween. In the TFT array substrate, when one of the pixels is focused, the pixel electrode is divided into a plurality of divided pixel electrodes and includes a plurality of branch conductive parts that conductively connect each of the drain electrode and the plurality of divided pixel electrodes, and in plane view, the common electrode is not formed in at least a part of a formation region of the plurality of branch conductive parts.

Abstract: Embodiments of displays with embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: Disclosed herein is a display device, including: a substrate; a circuit part configured to include a drive element formed over the substrate; a planarization insulating layer configured to be formed on the circuit part; an electrically-conductive layer configured to be formed on the planarization insulating layer and include a plurality of first electrodes and an auxiliary interconnect; an aperture-defining insulating layer configured to insulate the plurality of first electrodes from each other and have an aperture through which part of the first electrode is exposed; a plurality of light emitting elements configured to be formed by stacking the first electrode, an organic layer including a light emitting layer, and a second electrode in that order; and a separator configured to be formed by removing the planarization insulating layer at a position surrounding a display area in which the plurality of light emitting elements connected to the drive element are disposed.

Abstract: The light-emitting unit includes a first light-emitting element and a second light-emitting element over an insulating surface. The first light-emitting element includes a first electrode, a second electrode, and a layer containing a light-emitting organic compound interposed between the first and second electrodes. An edge portion of the first electrode is covered with a first insulating partition wall. The second light-emitting element includes a third electrode, a fourth electrode, a light-emitting organic compound interposed between the third and fourth electrodes. The first and third electrodes are formed from the same layer having a property of transmitting light emitted from the light-emitting organic compound. The second and fourth electrodes are formed from the same layer. The second electrode intersects with the edge portion of the first electrode with the first partition wall interposed therebetween, whereby the second electrode and the third electrode are electrically connected to each other.

Abstract: The present invention relates to a light emitting device comprising a plurality of electrically coupled light emitting elements, wherein each light emitting element has a luminous efficacy vs. current characteristic, wherein said luminous efficacy vs. current characteristic has a maximum luminous efficacy value and wherein at least one of said light emitting devices is operated at a current corresponding to a luminous efficacy value that is within 10% of said maximum luminous efficacy value. The present invention also relates to methods of making said light emitting device, to lamps comprising said light emitting device and to methods of operating said light emitting device.

Abstract: A pixel structure includes a substrate, a scan line, a first data line, a second data line, a first active device, a second active device, a first pixel electrode, and a second pixel electrode. The substrate has a first unit area and a second unit area. The first pixel electrode is disposed in the first unit area and includes a first main portion and first branch portions extending from the first main portion to an edge of the first unit area. The second pixel electrode is disposed in the second unit area and includes a second main portion and second branch portions extending from the second main portion to an edge of the second unit area, wherein at least a part of the first branch portions and at least a part of the second branch portions are asymmetrically arranged at two sides of the second data line.

Abstract: A display panel includes: gate lines disposed on a first substrate; signal lines extending across the gate lines and including portions, other than portions thereof that extend across the gate lines, disposed on the same surface as the gate lines, the portions that extend across the gate lines being disposed in positions facing the gate lines with an insulating film interposed therebetween; transistors having gate electrodes connected to the gate lines, source electrodes connected to the signal lines and disposed on the insulating film, and drain electrodes disposed on the insulating film; pixel electrodes connected to the drain electrode and disposed on the insulating film; a protective film covering the transistors and the pixel electrodes; and a common electrode disposed on the protective film.

Abstract: A liquid crystal display panel according to an embodiment of the disclosure comprises an array substrate and a color filter substrate, and primary spacers and protrusions are formed on the array substrate and the color filter substrate and contact each other, the protrusions corresponding to at least one of gate lines and data lines on the array substrate. Also, a method for manufacturing a liquid crystal display panel is provided.

Abstract: In the light-emitting display device according to the present invention, a side-contact structure is adopted in order to secure a TFT characteristic in a linear region (on-current). In a TFT configuring a switching transistor, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is increased. In contrast, in a TFT configuring a driving transistor, in order to maintain an on current, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is reduced. This configuration is manufactured using a half-tone mask. With this, it is possible to suppress the off-current in the switching transistor, while securing the on-current in the driving transistor.

Abstract: An active matrix substrate is provided with a lead wire led out from a switching element to a surrounding region; a pad portion formed in the lead wire, and positioned in surrounding region; an insulation layer formed so as to cover pad portion, including a passivation film formed of an inorganic material, and a planarization film positioned on passivation film and formed of an organic material, and having a contact hole formed so as to reach pad; and an ITO film positioned in contact hole, and formed on pad. ITO film is formed so as to be spaced from a part defined by planarization film in an inner periphery surface of contact hole.

Abstract: The present invention is directed to LED packages and methods utilizing waterproof and UV resistant packages with improved structural integrity. In some embodiments, the improved structural integrity is provided by various features in the lead frame that the casing material encompasses to improve the adhesion between the lead frame and the casing for a stronger, waterproof package. Moreover, in some embodiments the improved structural integrity and waterproofing is further provided by improved adhesion between the encapsulant and the casing. Some embodiments also provide for improved wire bonds, with the length, thickness, and loop height of the wire bonds controlled and optimized for improved adhesion between the wire bonds and the encapsulant as well as improved reliability.

Abstract: The present invention provides an organic EL display and a method of manufacturing the same capable of assuring excellent electric connection between an auxiliary wiring and a second electrode without using large-scale equipment. The organic EL display includes: a plurality of pixels each having, in order from a substrate side, a first electrode, an organic layer including a light emission layer, and a second electrode; an auxiliary wiring disposed in a periphery region of each of the plurality of pixels and conducted to the second electrode; and another auxiliary wiring disposed apart from the auxiliary wiring at least in a part of outer periphery of a formation region of the auxiliary wiring in a substrate surface.

Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

Abstract: A liquid crystal panel, comprising: an array substrate including: a display area, in which pixels disposed, wherein the pixel includes: a switching device; a lower electrode; an insulating layer formed on the lower electrode; an upper electrode, which has a plurality of slits to generate a fringe electric field; and a common signal line; a scanning line; a signal line crossing the scanning line; and a contact hole; and an opposite substrate, wherein one electrode of the upper electrode and the lower electrode is a pixel electrode connected to the switching element, and the other electrode thereof is a common electrode, wherein the signal line is disposed at every two pixels adjacent in a scanning line direction, wherein the contact hole is shared by the adjacent two pixels and is formed at an intervening region of the two adjacent pixels in which the signal line is not provided.

Abstract: High performance LED lights and methods of manufacturing high performance LED lights are disclosed. Features of a light may include, inter alia, LED elements with acute angle lenses, and LED distributions that optimize light intensity over a desired area. In grow light applications, a light may incorporate LED wavelengths that maximize photosynthesis, plant growth and flowering. The light may also optionally provide for visibility of plant growth and the work area.

Abstract: A transistor array substrate includes a substrate, plural pads, plural shorting bars, at least one pixel array, plural first wires, and plural second wires. The substrate has at least one panel region and a peripheral circuit region surrounding the panel region. The pads and the shorting bars are disposed in the peripheral circuit region. The pixel array, the first wires, and the second wires are disposed in the panel region. The panel region has a pair of first edges and a pair of second edges. The first edges are connected between the second edges. The shorting bars are connected to the pads. The first wires and the second wires are electrically connected to the pixel array. The first wires are connected to some shorting bars through one of the first edges.

Abstract: An organic light emitting diode (OLED) display includes: a substrate including a first area and a second area; a first electrode at the first area of the substrate, and a first electrode at the second area of the substrate; a reflective electrode on the first electrode at the first area; a barrier rib on the substrate, the barrier rib having openings exposing the reflective electrode and the first electrode at the second area; an organic emission layer on the reflective electrode and the first electrode at the second area; a second electrode on the organic emission layer; and a reflective layer on the second electrode at the second area.

Abstract: A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.

Abstract: A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A gate wire is below the passivation film. A source wire and a relay wire are above the passivation film. The source wire is electrically connected to a source electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the source wire and the relay electrode and not electrically connected between the source wire and the relay electrode. The conductive oxide film covers an end portion of the gate wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film.

Abstract: A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A source wire is below the passivation film. A gate wire and a relay electrode are above the passivation film. The gate wire is electrically connected to a gate electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the gate wire and the relay electrode and not electrically connected between the gate wire and the relay electrode. The conductive oxide film covers an end portion of the source wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film.

Abstract: A semiconductor device and an optical print head, an image forming apparatus that has the semiconductor device are supplied capable of reduce occurrence probability of defect. The semiconductor device is formed by using semiconductor thin film bonded on the substrate, and includes a covering layer that covers at least one part region of the semiconductor thin film and covers at least one part of electroconductive member connecting with the semiconductor thin film.

Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

Abstract: A light emitting apparatus capable of increasing the number of substrates formed from one multi-surface pattern substrate and capable of reducing the manufacturing cost. The light emitting apparatus (100) includes a belt-like substrate (101), a light emitting element (102) mounted on the substrate (101), and a luminous flux control member (103) mounted on the substrate (101).

Abstract: A light emitting device according to one embodiment includes a board; plural first light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; plural second light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; a first fluorescent layer formed on each of the first light emitting elements, the first fluorescent layer including a first phosphor; and a second fluorescent layer formed on each of the second light emitting elements, the second fluorescent layer including a second phosphor. The second phosphor is higher than the first phosphor in luminous efficiency at 50° C., and is lower than the first phosphor in the luminous efficiency at 150° C.

Abstract: A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

Abstract: A pixel array includes pixel sets. Each pixel set includes a first and second scan lines arranged in parallel on a substrate, a data line not parallel to the first and second scan lines, a first active device electrically connecting the first scan line and the data line, a second active device electrically connecting the second scan line and the data line, a first pixel electrode electrically connecting the first active device, a second pixel electrode electrically connecting the second active device, and an auxiliary electrode pattern that includes a connecting portion and a first and second branch portions. A gap is between the first and second pixel electrodes. The connecting portion underneath the gap between the first and second pixel electrodes partially overlaps the first and second pixel electrodes. The first and second branch portions connect the connecting portion and partially overlap the first and second pixel electrodes, respectively.

Abstract: Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.

Abstract: A light-emitting device is provided that is capable of being directly connected to an alternative current source, including at least one electronic element; at least one light-emitting diode array chip; at least one bonding pad, a conductive trace, and a submount for supporting the electronic element, the light-emitting diode array chip, the bonding pad, and the conductive trace. The conductive trace is electrically connected to the electronic element, the light-emitting diode array chip, and bonding pad.

Abstract: The present invention relates to a display apparatus, which has a quantum dot layer. The quantum dot layer has a plurality of quantum dot blocks which comprise quantum dots and are arranged in a matrix. The quantum dots when excited by the light convert the light wavelength so as to determine the color of each pixel of an image. As a result, the color filter of prior art can be omitted. Compared with the luminescent efficiency of the display apparatus of prior art, the luminescent efficiency of the display apparatus of the present invention can be raised.

Abstract: An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.

Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Abstract: A light emitting diode chip includes a submount, a reflective layer on the submount, an insulating layer on the reflective layer opposite the submount, and a plurality of sub-LEDs on the insulating layer. Each of the sub-LEDs includes a first face adjacent to the submount and a transparent contact on the first face between the sub-LED and the insulating layer and electrical interconnects between adjacent ones of the sub-LEDs.

Abstract: An exemplary embodiment of a photo element comprises a first line, a second line, a switch transistor, and a photo transistor. The switch transistor has a first electrode, a second electrode, and a first gate. One of the first electrode and the second electrode is electrically coupled to the first line, and the first gate is electrically coupled to the second line. The photo transistor is electrically coupled to the switch transistor and arranged to detect light. The photo transistor has a third electrode, a fourth electrode, and a second gate. At least one of the switch transistor and the photo transistor is an asymmetric transistor.

Abstract: An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an dielectric material formed intermediate the electrode and a light emitting semiconductor material. Electrical continuity between the semiconductor material and the metal electrode is provided by an optically transmissive ohmic contact layer, such as a layer of Indium Tin Oxide. The metal electrode thus can be physically separated from the semiconductor material by one or more of the dielectric material and the ohmic contact layer. The dielectric layer can increase total internal reflection of light at the interface between the semiconductor and the dielectric layer, which can reduce absorption of light by the electrode. Such LED can have enhanced utility and can be suitable for uses such as general illumination.

Abstract: The present invention relates to a method for manufacturing a light emitting diode (LED) chip for a chip on board and a method for manufacturing an LED light source module in a chip on board fashion. The method of the present invention includes forming a plurality of LED chips on a wafer, molding a region of each LED chip, cutting the wafer into each LED chip, and testing each LED chip for operating characteristics.

Abstract: Aspects concerning a method of making electrical contact to a region of semiconductor in which one or more LEDs are formed include that a dielectric region can be formed on a p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.

Abstract: This present invention provides an electronic paper display device. The electronic paper display device includes a thin film transistor array substrate and a display panel disposed on one side of the thin film transistor array substrate. The thin film transistor array substrate comprises a first substrate, a first metal layer, a dielectric layer, a second metal layer, a channel layer, a pixel electrode layer, a protection layer, a first resin layer and a second resin layer. The display panel includes a second substrate, a transparent electrode layer disposed on the second substrate, and an electronic ink material layer between the transparent electrode layer and the thin film transistor array substrate.

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract: A display structure includes a first transparent substrate, a second transparent substrate opposite the first transparent substrate, a display medium interposed between the first transparent substrate and the second transparent substrate, at least one first thin film transistor formed on the first transparent substrate, a first insulation layer formed on the first transparent substrate, a first electrode layer formed on the first insulation layer, an organic light-emitting layer formed on the first electrode layer and in a region not overlapping the first thin film transistor, a cathode layer formed on the organic light-emitting layer, and a second electrode layer formed on the second transparent substrate.

Abstract: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.

Abstract: A thin film transistor array substrate includes a substrate having a plurality of pixel units arranged in a matrix, a plurality of first gate lines and second gate lines alternately arranged on the substrate, a plurality of source lines perpendicular to the first gate lines and the second gate lines formed on the substrate, and a plurality of thin film transistors respectively positioned in the pixel units. Each of the source lines further includes a main source line and a sub source line electrically connected to each other in parallel connection.

Abstract: An arrangement includes at least two optoelectronic individual elements. At least two of the individual elements overlap partially in a lateral direction. Indirect or direct electrical contacting between the at least two laterally overlapping individual elements is brought about by at least one conductor track on a carrier top of the one individual element and by at least one conductor track on a carrier bottom of the other individual element.