X-ray, Gamma-ray, Or High Energy Radiation Imager (measuring X-, Gamma- Or Corpuscular Radiation) (epo) Patents (Class 257/E27.14)
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Patent number: 9964823Abstract: A display panel includes an array substrate having a plurality of pixel regions in multi-rows and multi-columns, a thin film transistor comprising a gate, a source, a drain and an active layer being provided in each of the pixel regions. Two gate lines are provided between two adjacent rows of pixel regions. Two adjacent columns of pixel regions constitute one pixel column group, and a data line is provided between two columns of pixel regions in the same one pixel column group. The array substrate further includes a pixel electrode, a common electrode and a common electrode line comprising a horizontal common electrode line parallel to the gate line, wherein a projection of the horizontal common electrode line in a direction perpendicular to the display panel is not overlapped with projections of the drains of respective thin film transistors in the direction perpendicular to the display panel.Type: GrantFiled: April 14, 2016Date of Patent: May 8, 2018Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Peng Jiang, Weihua Jia, Haipeng Yang, Jaikwang Kim, Yongjun Yoon
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Patent number: 9724057Abstract: A CT scanner apparatus includes an X-ray source mounted on a gantry of the CT scanner apparatus and configured to emit X-rays, and at least one magnetic field gradient circuit. The at least one magnetic field gradient circuit and the X-ray source rotate together. The CT scanner apparatus also includes a CT detector mounted on the gantry in fixed orbital opposition to the X-ray source. The CT detector is configured to detect the X-rays, wherein the CT detector and the X-ray source are configured to rotate along a first orbital path. The CT scanner apparatus also includes an array of fixed PCD assemblies arranged in a ring inside the first orbital path. Each PCD assembly is configured to rotatably actuate about a gantry support from a first position to a second position to reduce blockage of emitted X-rays when the magnetic field gradient circuit rotates within a predetermined distance of the PCD assembly.Type: GrantFiled: June 30, 2015Date of Patent: August 8, 2017Assignee: TOSHIBA MEDICAL SYSTEMS CORPORATIONInventors: Yuexing Zhang, Les Kvien, Barry Roberts
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Patent number: 8860166Abstract: The photo detector array is configured to generate pulses with short rise and fall times because each Geiger mode avalanche photodiode includes an anode contact, a cathode contact, an output contact electrically insulated from the anode and cathode contacts, a semiconductor layer, and at least one shield or metal structure in the semiconductor layer capacitively coupled to the semiconductor layer and coupled to the output contact. The output contacts of all Geiger mode avalanche photodiodes are connected in common and are configured to provide for detection of spikes correlated to avalanche events on any avalanche photodiode of the array.Type: GrantFiled: April 30, 2012Date of Patent: October 14, 2014Assignee: STMicroelectronics S.r.l.Inventors: Delfo Nunziato Sanfilippo, Giovanni Condorelli
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Patent number: 8624305Abstract: A solid-state imaging device includes a photoelectric conversion portion that is provided above an imaging surface of a substrate, and a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface. The photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film, and the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface. Further, each of the readout circuit portions includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface.Type: GrantFiled: November 3, 2010Date of Patent: January 7, 2014Assignee: Sony CorporationInventors: Hiroyuki Okita, Toshitaka Kawashima
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Patent number: 8501573Abstract: An X-ray image sensor having scintillating material embedded into wave-guide structures fabricated in a CMOS image sensor (CIS). After the CIS has been fabricated, openings (deep pores) are formed in the back side of the CIS wafer. These openings terminate at a distance of about 1 to 5 microns below the upper silicon surface of the wafer. The depth of these openings can be controlled by stopping on a buried insulating layer, or by stopping on an epitaxial silicon layer having a distinctive doping concentration. The openings are aligned with corresponding photodiodes of the CIS. The openings may have a shape that narrows as approaching the photodiodes. A thin layer of a reflective material may be formed on the sidewalls of the openings, thereby improving the efficiency of the resulting waveguide structures. Scintillating material (e.g., CsI(Tl)) is introduced into the openings using a ForceFillâ„¢ technology or by mechanical pressing.Type: GrantFiled: February 20, 2009Date of Patent: August 6, 2013Assignee: Tower Semiconductor Ltd.Inventors: Yakov Roizin, Amos Fenigstein, Avi Strum, Alexey Heiman, Doron Pardess
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Patent number: 8445944Abstract: A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.Type: GrantFiled: December 21, 2011Date of Patent: May 21, 2013Assignee: Sony CorporationInventors: Takayuki Ezaki, Teruo Hirayama
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Publication number: 20130009267Abstract: An apparatus and method to decrease light saturation in a photosensor array and increase detection efficiency uses a light distribution profile from a scintillator-photodetector geometry to configure the photosensor array to have a non-uniform sensor cell pattern, with varying cell density and/or varying cell size and shape. A solid-state photosensor such as a SiPM sensor having such a non-uniform cell structure realizes improved energy resolution, higher efficiency and increased signal linearity. In addition the non-uniform sensor cell array can have improved timing resolution due to improvements in statistical fluctuations. A particular embodiment for such photosensors is in PET medical imaging.Type: ApplicationFiled: July 2, 2012Publication date: January 10, 2013Applicants: SIEMENS MEDICAL SOLUTIONS USA, INC., SIEMENS AKTIENGESELLSCHAFTInventors: Debora Henseler, Ronald Grazioso, Nan Zhang
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Patent number: 8294231Abstract: An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer.Type: GrantFiled: March 20, 2009Date of Patent: October 23, 2012Assignee: Oki Semiconductor Co., Ltd.Inventor: Yasuaki Kawai
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Patent number: 8288864Abstract: In a microwave module with at least one semiconductor chip, which provides on its upper side a connecting-line structure formed in particular as a coplanar line, which is connected to at least one adjacent incoming and/or outgoing line structure formed on the upper side of the substrate, the chip is glued with its underside and all lateral surfaces, on which no high-frequency connecting lines lead to the chip, within a recess of a metal part with good thermal conduction.Type: GrantFiled: March 10, 2009Date of Patent: October 16, 2012Assignee: Rohde & Schwarz GmbH & Co. KGInventors: Werner Perndl, Thomas Reichel
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Publication number: 20120161018Abstract: A thin film transistor (TFT) array substrate for an X-ray detector that improves a fill factor is disclosed. According to one aspect, the substrate includes a plurality of pixel areas each including a transistor area in which a TFT is formed, and a photodiode area in which a photodiode is formed. A first wire is formed in a first layer disposed in a lower portion of a photodiode layer in which the photodiode is formed, in at least a portion of the transistor area of the photodiode layer, and in a second layer disposed in an upper portion of the photodiode layer. A second wire, insulated from the first wire, extends in the pixel areas and is formed in the second layer. At least one TFT is formed in the transistor area and electrically connected to at least one of the first and second wires.Type: ApplicationFiled: November 21, 2011Publication date: June 28, 2012Applicant: Samsung Mobile Display Co., Ltd.Inventor: Chul-Woo Shin
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Patent number: 8164151Abstract: The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.Type: GrantFiled: May 7, 2007Date of Patent: April 24, 2012Assignee: OSI Optoelectronics, Inc.Inventors: Peter Steven Bui, Narayan Dass Taneja
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Patent number: 8093671Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.Type: GrantFiled: September 13, 2010Date of Patent: January 10, 2012Assignee: Kromek LimitedInventors: Arnab Basu, Max Robinson, Benjamin John Cantwell, Andy Brinkman
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Patent number: 8093095Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.Type: GrantFiled: December 21, 2006Date of Patent: January 10, 2012Assignee: Kromek LimitedInventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman
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Patent number: 8088639Abstract: A solid-state image pickup device includes a semiconductor substrate within which a pixel comprised of a photodiode and a transistor is formed. The transistor is formed at a surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode is provided within the semiconductor substrate and a part of the pn junction portion of the photodiode is extended to a lower portion of the transistor formed at the surface of the semiconductor substrate.Type: GrantFiled: October 29, 2007Date of Patent: January 3, 2012Assignee: Sony CorporationInventors: Takayuki Ezaki, Teruo Hirayama
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Patent number: 8044476Abstract: A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.Type: GrantFiled: June 16, 2006Date of Patent: October 25, 2011Assignee: National University Corporation Shizuoka UniversityInventors: Yoshinori Hatanaka, Toru Aoki
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Publication number: 20110204246Abstract: A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.Type: ApplicationFiled: February 15, 2011Publication date: August 25, 2011Applicant: SONY CORPORATIONInventors: Tsutomu Tanaka, Makoto Takatoku, Yasuhiro Yamada, Ryoichi Ito
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Publication number: 20110158387Abstract: The present disclosure relates to radiation detectors having a layer of a high Z material, such as tungsten or lead, disposed on a face of a photodetector layer or other underlying layer. In one embodiment, the layer of the high Z material substantially prevents radiation from reaching on or more electronics components or circuits, such as an analog-to-digital conversion ASIC or other circuit.Type: ApplicationFiled: December 22, 2010Publication date: June 30, 2011Applicant: General Electric CompanyInventors: Mahesh Raman Narayanaswamy, Gregory Scott Zeman
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Patent number: 7964903Abstract: A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes (178,195) facing each other and a photo-conductive layer (800) disposed between the first electrode and the second electrode. The TFT includes a semiconductor layer (150), a gate electrode (123), a source electrode (173) connected to a data line, a drain electrode (175) connected to the photo diode. The dummy pixel further includes a light blocking layer (196) for blocking light incident on the photo diode. Alternatively, the semiconductor layer is disconnected between the source electrode and the drain electrode.Type: GrantFiled: April 19, 2010Date of Patent: June 21, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: In-Su Joo, Joon-Hoo Choi
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Patent number: 7898010Abstract: A pinned photodiode with improved short wavelength light response. In exemplary embodiments of the invention, a gate oxide is formed over a doped, buried region in a semiconductor substrate. A conductor is formed on top of the gate oxide. The gate conductor is transparent, and in one embodiment is a layer of indium-tin oxide. The transparent conductor can be biased to reduce the need for a surface dopant in creating a pinned photodiode region. The biasing of the transparent conductor produces a hole-rich accumulation region near the surface of the substrate. The gate conductor material permits a greater amount of charges from short wavelength light to be captured in the photo-sensing region in the substrate, and thereby increases the quantum efficiency of the photosensor.Type: GrantFiled: July 1, 2004Date of Patent: March 1, 2011Assignee: Micron Technology, Inc.Inventors: Chandra Mouli, Howard E. Rhodes
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Publication number: 20110001051Abstract: A photodiode comprising: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type that is opposite to the first conductivity type of the first semiconductor layer; and a third semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, wherein an edge of the first semiconductor layer is inset from an edge of the second semiconductor layer.Type: ApplicationFiled: June 23, 2010Publication date: January 6, 2011Applicant: SONY CORPORATIONInventor: Tsutomu TANAKA
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Patent number: 7728329Abstract: A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes (178,195) facing each other and a photo-conductive layer (800) disposed between the first electrode and the second electrode. The TFT includes a semiconductor layer (150), a gate electrode (123), a source electrode (173) connected to a data line, a drain electrode (175) connected to the photo diode. The dummy pixel further includes a light blocking layer (196) for blocking light incident on the photo diode. Alternatively, the semiconductor layer is disconnected between the source electrode and the drain electrode.Type: GrantFiled: December 11, 2003Date of Patent: June 1, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: In-Su Joo, Joon-Hoo Choi
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Publication number: 20100108893Abstract: Ultra thin photodiode array structures and fabrication methods are disclosed. The back illuminated or front illuminated photodiode arrays have the active portion fabricated in a semiconductor layer which may be bonded to a supporting substrate layer. The active portion of semiconductor layer may comprise epitaxially grown layer. The isolation regions between pixels of an array may span the epitaxial layer and a semiconductor layer. Electrical contacts to the diodes are made through the bonded substrate or a portion of active layer. Methods of fabrication include steps to form a photodiode array of this type as well as steps to bond this array to supporting substrates. In some embodiments, supporting substrates are temporarily bonded for support of the methods of processing.Type: ApplicationFiled: October 26, 2009Publication date: May 6, 2010Applicant: ARRAY OPTRONIX, INC.Inventors: Frederick A. Flitsch, Alexander O. Goushcha
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Patent number: 7518148Abstract: An organic device package that provides full fault tolerance against both electrical shorts and electrical opens is presented. An organic device package comprising a plurality of groups of organic electronic elements electrically coupled in series, where at least one of the plurality of groups of organic electronic elements comprises a plurality of sub-groups of organic electronic elements electrically coupled in parallel, and where at least one of the plurality of sub-groups of organic electronic elements comprises a plurality of organic electronic elements electrically coupled in series. Further, various embodiments are contemplated where a plurality of series blocks and parallel blocks may be nested to provide a grid network having increased flexibility and fault tolerance.Type: GrantFiled: March 29, 2005Date of Patent: April 14, 2009Assignee: General Electric CompanyInventors: Jie Liu, Anil Raj Duggal
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Patent number: 7439155Abstract: Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive materials containing silicon include polysilicon and silicon-germanium. There is also provided a method and structure for isolating the regions by providing a trench in an active area of a substrate, growing an epitaxial layer in the trench to fill the trench or to partially fill the trench and depositing an insulating material over the epitaxial layer and within the trench to completely fill the trench.Type: GrantFiled: August 26, 2004Date of Patent: October 21, 2008Assignee: Micron Technology, Inc.Inventors: Chandra Mouli, Howard Rhodes
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Patent number: 7429723Abstract: A conversion apparatus includes pixels including switching elements provided on an insulating substrate and conversion elements disposed over the switching elements and connected to the switching elements. Conductive lines are coupled to the pixels and have terminal elements for providing a connection to an external circuit. The terminal elements are disposed in a metal layer that is formed over the conversion elements. The conversion apparatus further includes a transparent conductive layer covering surfaces of the terminal elements, and a protective layer covering edges of the terminal elements and having openings.Type: GrantFiled: July 7, 2006Date of Patent: September 30, 2008Assignee: Canon Kabushiki KaishaInventors: Chiori Mochizuki, Keiichi Nomura, Minoru Watanabe, Takamasa Ishii
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Patent number: 7202095Abstract: A measurement substrate 100 in which a silicon oxide film 102, a polysilicon layer 103 and a titanium silicide layer 104 are formed over a silicon substrate 101 in this order is prepared. The measurement substrate 100 is irradiated with X-rays so that the proportions of three types of silicides with different compositions in the titanium silicide layer 104 are measured based on the intensity of hard X-rays emitted from oxygen in the silicon oxide film 102 and the intensity of hard X-rays emitted from titanium in the titanium silicide layer 104.Type: GrantFiled: January 7, 2004Date of Patent: April 10, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Akihiko Tsuzumitani, Yasutoshi Okuno
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Patent number: 7030551Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.Type: GrantFiled: August 8, 2001Date of Patent: April 18, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Masato Yonezawa, Hajime Kimura, Yu Yamazaki
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Patent number: RE42157Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.Type: GrantFiled: February 26, 2008Date of Patent: February 22, 2011Assignee: Canon Kabushiki KaishaInventors: Noriyuki Kaifu, Hidemasa Mizutani, Shinichi Takeda, Isao Kobayashi, Satoshi Itabashi