X-ray, Gamma-ray, Or High Energy Radiation Imager (measuring X-, Gamma- Or Corpuscular Radiation) (epo) Patents (Class 257/E27.14)
  • Patent number: 9964823
    Abstract: A display panel includes an array substrate having a plurality of pixel regions in multi-rows and multi-columns, a thin film transistor comprising a gate, a source, a drain and an active layer being provided in each of the pixel regions. Two gate lines are provided between two adjacent rows of pixel regions. Two adjacent columns of pixel regions constitute one pixel column group, and a data line is provided between two columns of pixel regions in the same one pixel column group. The array substrate further includes a pixel electrode, a common electrode and a common electrode line comprising a horizontal common electrode line parallel to the gate line, wherein a projection of the horizontal common electrode line in a direction perpendicular to the display panel is not overlapped with projections of the drains of respective thin film transistors in the direction perpendicular to the display panel.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: May 8, 2018
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Peng Jiang, Weihua Jia, Haipeng Yang, Jaikwang Kim, Yongjun Yoon
  • Patent number: 9724057
    Abstract: A CT scanner apparatus includes an X-ray source mounted on a gantry of the CT scanner apparatus and configured to emit X-rays, and at least one magnetic field gradient circuit. The at least one magnetic field gradient circuit and the X-ray source rotate together. The CT scanner apparatus also includes a CT detector mounted on the gantry in fixed orbital opposition to the X-ray source. The CT detector is configured to detect the X-rays, wherein the CT detector and the X-ray source are configured to rotate along a first orbital path. The CT scanner apparatus also includes an array of fixed PCD assemblies arranged in a ring inside the first orbital path. Each PCD assembly is configured to rotatably actuate about a gantry support from a first position to a second position to reduce blockage of emitted X-rays when the magnetic field gradient circuit rotates within a predetermined distance of the PCD assembly.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: August 8, 2017
    Assignee: TOSHIBA MEDICAL SYSTEMS CORPORATION
    Inventors: Yuexing Zhang, Les Kvien, Barry Roberts
  • Patent number: 8860166
    Abstract: The photo detector array is configured to generate pulses with short rise and fall times because each Geiger mode avalanche photodiode includes an anode contact, a cathode contact, an output contact electrically insulated from the anode and cathode contacts, a semiconductor layer, and at least one shield or metal structure in the semiconductor layer capacitively coupled to the semiconductor layer and coupled to the output contact. The output contacts of all Geiger mode avalanche photodiodes are connected in common and are configured to provide for detection of spikes correlated to avalanche events on any avalanche photodiode of the array.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: October 14, 2014
    Assignee: STMicroelectronics S.r.l.
    Inventors: Delfo Nunziato Sanfilippo, Giovanni Condorelli
  • Patent number: 8624305
    Abstract: A solid-state imaging device includes a photoelectric conversion portion that is provided above an imaging surface of a substrate, and a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface. The photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film, and the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface. Further, each of the readout circuit portions includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: January 7, 2014
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okita, Toshitaka Kawashima
  • Patent number: 8501573
    Abstract: An X-ray image sensor having scintillating material embedded into wave-guide structures fabricated in a CMOS image sensor (CIS). After the CIS has been fabricated, openings (deep pores) are formed in the back side of the CIS wafer. These openings terminate at a distance of about 1 to 5 microns below the upper silicon surface of the wafer. The depth of these openings can be controlled by stopping on a buried insulating layer, or by stopping on an epitaxial silicon layer having a distinctive doping concentration. The openings are aligned with corresponding photodiodes of the CIS. The openings may have a shape that narrows as approaching the photodiodes. A thin layer of a reflective material may be formed on the sidewalls of the openings, thereby improving the efficiency of the resulting waveguide structures. Scintillating material (e.g., CsI(Tl)) is introduced into the openings using a ForceFillâ„¢ technology or by mechanical pressing.
    Type: Grant
    Filed: February 20, 2009
    Date of Patent: August 6, 2013
    Assignee: Tower Semiconductor Ltd.
    Inventors: Yakov Roizin, Amos Fenigstein, Avi Strum, Alexey Heiman, Doron Pardess
  • Patent number: 8445944
    Abstract: A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: May 21, 2013
    Assignee: Sony Corporation
    Inventors: Takayuki Ezaki, Teruo Hirayama
  • Publication number: 20130009267
    Abstract: An apparatus and method to decrease light saturation in a photosensor array and increase detection efficiency uses a light distribution profile from a scintillator-photodetector geometry to configure the photosensor array to have a non-uniform sensor cell pattern, with varying cell density and/or varying cell size and shape. A solid-state photosensor such as a SiPM sensor having such a non-uniform cell structure realizes improved energy resolution, higher efficiency and increased signal linearity. In addition the non-uniform sensor cell array can have improved timing resolution due to improvements in statistical fluctuations. A particular embodiment for such photosensors is in PET medical imaging.
    Type: Application
    Filed: July 2, 2012
    Publication date: January 10, 2013
    Applicants: SIEMENS MEDICAL SOLUTIONS USA, INC., SIEMENS AKTIENGESELLSCHAFT
    Inventors: Debora Henseler, Ronald Grazioso, Nan Zhang
  • Patent number: 8294231
    Abstract: An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer.
    Type: Grant
    Filed: March 20, 2009
    Date of Patent: October 23, 2012
    Assignee: Oki Semiconductor Co., Ltd.
    Inventor: Yasuaki Kawai
  • Patent number: 8288864
    Abstract: In a microwave module with at least one semiconductor chip, which provides on its upper side a connecting-line structure formed in particular as a coplanar line, which is connected to at least one adjacent incoming and/or outgoing line structure formed on the upper side of the substrate, the chip is glued with its underside and all lateral surfaces, on which no high-frequency connecting lines lead to the chip, within a recess of a metal part with good thermal conduction.
    Type: Grant
    Filed: March 10, 2009
    Date of Patent: October 16, 2012
    Assignee: Rohde & Schwarz GmbH & Co. KG
    Inventors: Werner Perndl, Thomas Reichel
  • Publication number: 20120161018
    Abstract: A thin film transistor (TFT) array substrate for an X-ray detector that improves a fill factor is disclosed. According to one aspect, the substrate includes a plurality of pixel areas each including a transistor area in which a TFT is formed, and a photodiode area in which a photodiode is formed. A first wire is formed in a first layer disposed in a lower portion of a photodiode layer in which the photodiode is formed, in at least a portion of the transistor area of the photodiode layer, and in a second layer disposed in an upper portion of the photodiode layer. A second wire, insulated from the first wire, extends in the pixel areas and is formed in the second layer. At least one TFT is formed in the transistor area and electrically connected to at least one of the first and second wires.
    Type: Application
    Filed: November 21, 2011
    Publication date: June 28, 2012
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventor: Chul-Woo Shin
  • Patent number: 8164151
    Abstract: The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.
    Type: Grant
    Filed: May 7, 2007
    Date of Patent: April 24, 2012
    Assignee: OSI Optoelectronics, Inc.
    Inventors: Peter Steven Bui, Narayan Dass Taneja
  • Patent number: 8093671
    Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: January 10, 2012
    Assignee: Kromek Limited
    Inventors: Arnab Basu, Max Robinson, Benjamin John Cantwell, Andy Brinkman
  • Patent number: 8093095
    Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: January 10, 2012
    Assignee: Kromek Limited
    Inventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman
  • Patent number: 8088639
    Abstract: A solid-state image pickup device includes a semiconductor substrate within which a pixel comprised of a photodiode and a transistor is formed. The transistor is formed at a surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode is provided within the semiconductor substrate and a part of the pn junction portion of the photodiode is extended to a lower portion of the transistor formed at the surface of the semiconductor substrate.
    Type: Grant
    Filed: October 29, 2007
    Date of Patent: January 3, 2012
    Assignee: Sony Corporation
    Inventors: Takayuki Ezaki, Teruo Hirayama
  • Patent number: 8044476
    Abstract: A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: October 25, 2011
    Assignee: National University Corporation Shizuoka University
    Inventors: Yoshinori Hatanaka, Toru Aoki
  • Publication number: 20110204246
    Abstract: A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.
    Type: Application
    Filed: February 15, 2011
    Publication date: August 25, 2011
    Applicant: SONY CORPORATION
    Inventors: Tsutomu Tanaka, Makoto Takatoku, Yasuhiro Yamada, Ryoichi Ito
  • Publication number: 20110158387
    Abstract: The present disclosure relates to radiation detectors having a layer of a high Z material, such as tungsten or lead, disposed on a face of a photodetector layer or other underlying layer. In one embodiment, the layer of the high Z material substantially prevents radiation from reaching on or more electronics components or circuits, such as an analog-to-digital conversion ASIC or other circuit.
    Type: Application
    Filed: December 22, 2010
    Publication date: June 30, 2011
    Applicant: General Electric Company
    Inventors: Mahesh Raman Narayanaswamy, Gregory Scott Zeman
  • Patent number: 7964903
    Abstract: A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes (178,195) facing each other and a photo-conductive layer (800) disposed between the first electrode and the second electrode. The TFT includes a semiconductor layer (150), a gate electrode (123), a source electrode (173) connected to a data line, a drain electrode (175) connected to the photo diode. The dummy pixel further includes a light blocking layer (196) for blocking light incident on the photo diode. Alternatively, the semiconductor layer is disconnected between the source electrode and the drain electrode.
    Type: Grant
    Filed: April 19, 2010
    Date of Patent: June 21, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Su Joo, Joon-Hoo Choi
  • Patent number: 7898010
    Abstract: A pinned photodiode with improved short wavelength light response. In exemplary embodiments of the invention, a gate oxide is formed over a doped, buried region in a semiconductor substrate. A conductor is formed on top of the gate oxide. The gate conductor is transparent, and in one embodiment is a layer of indium-tin oxide. The transparent conductor can be biased to reduce the need for a surface dopant in creating a pinned photodiode region. The biasing of the transparent conductor produces a hole-rich accumulation region near the surface of the substrate. The gate conductor material permits a greater amount of charges from short wavelength light to be captured in the photo-sensing region in the substrate, and thereby increases the quantum efficiency of the photosensor.
    Type: Grant
    Filed: July 1, 2004
    Date of Patent: March 1, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Chandra Mouli, Howard E. Rhodes
  • Publication number: 20110001051
    Abstract: A photodiode comprising: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type that is opposite to the first conductivity type of the first semiconductor layer; and a third semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, wherein an edge of the first semiconductor layer is inset from an edge of the second semiconductor layer.
    Type: Application
    Filed: June 23, 2010
    Publication date: January 6, 2011
    Applicant: SONY CORPORATION
    Inventor: Tsutomu TANAKA
  • Patent number: 7728329
    Abstract: A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes (178,195) facing each other and a photo-conductive layer (800) disposed between the first electrode and the second electrode. The TFT includes a semiconductor layer (150), a gate electrode (123), a source electrode (173) connected to a data line, a drain electrode (175) connected to the photo diode. The dummy pixel further includes a light blocking layer (196) for blocking light incident on the photo diode. Alternatively, the semiconductor layer is disconnected between the source electrode and the drain electrode.
    Type: Grant
    Filed: December 11, 2003
    Date of Patent: June 1, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Su Joo, Joon-Hoo Choi
  • Publication number: 20100108893
    Abstract: Ultra thin photodiode array structures and fabrication methods are disclosed. The back illuminated or front illuminated photodiode arrays have the active portion fabricated in a semiconductor layer which may be bonded to a supporting substrate layer. The active portion of semiconductor layer may comprise epitaxially grown layer. The isolation regions between pixels of an array may span the epitaxial layer and a semiconductor layer. Electrical contacts to the diodes are made through the bonded substrate or a portion of active layer. Methods of fabrication include steps to form a photodiode array of this type as well as steps to bond this array to supporting substrates. In some embodiments, supporting substrates are temporarily bonded for support of the methods of processing.
    Type: Application
    Filed: October 26, 2009
    Publication date: May 6, 2010
    Applicant: ARRAY OPTRONIX, INC.
    Inventors: Frederick A. Flitsch, Alexander O. Goushcha
  • Patent number: 7518148
    Abstract: An organic device package that provides full fault tolerance against both electrical shorts and electrical opens is presented. An organic device package comprising a plurality of groups of organic electronic elements electrically coupled in series, where at least one of the plurality of groups of organic electronic elements comprises a plurality of sub-groups of organic electronic elements electrically coupled in parallel, and where at least one of the plurality of sub-groups of organic electronic elements comprises a plurality of organic electronic elements electrically coupled in series. Further, various embodiments are contemplated where a plurality of series blocks and parallel blocks may be nested to provide a grid network having increased flexibility and fault tolerance.
    Type: Grant
    Filed: March 29, 2005
    Date of Patent: April 14, 2009
    Assignee: General Electric Company
    Inventors: Jie Liu, Anil Raj Duggal
  • Patent number: 7439155
    Abstract: Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive materials containing silicon include polysilicon and silicon-germanium. There is also provided a method and structure for isolating the regions by providing a trench in an active area of a substrate, growing an epitaxial layer in the trench to fill the trench or to partially fill the trench and depositing an insulating material over the epitaxial layer and within the trench to completely fill the trench.
    Type: Grant
    Filed: August 26, 2004
    Date of Patent: October 21, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Chandra Mouli, Howard Rhodes
  • Patent number: 7429723
    Abstract: A conversion apparatus includes pixels including switching elements provided on an insulating substrate and conversion elements disposed over the switching elements and connected to the switching elements. Conductive lines are coupled to the pixels and have terminal elements for providing a connection to an external circuit. The terminal elements are disposed in a metal layer that is formed over the conversion elements. The conversion apparatus further includes a transparent conductive layer covering surfaces of the terminal elements, and a protective layer covering edges of the terminal elements and having openings.
    Type: Grant
    Filed: July 7, 2006
    Date of Patent: September 30, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Chiori Mochizuki, Keiichi Nomura, Minoru Watanabe, Takamasa Ishii
  • Patent number: 7202095
    Abstract: A measurement substrate 100 in which a silicon oxide film 102, a polysilicon layer 103 and a titanium silicide layer 104 are formed over a silicon substrate 101 in this order is prepared. The measurement substrate 100 is irradiated with X-rays so that the proportions of three types of silicides with different compositions in the titanium silicide layer 104 are measured based on the intensity of hard X-rays emitted from oxygen in the silicon oxide film 102 and the intensity of hard X-rays emitted from titanium in the titanium silicide layer 104.
    Type: Grant
    Filed: January 7, 2004
    Date of Patent: April 10, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihiko Tsuzumitani, Yasutoshi Okuno
  • Patent number: 7030551
    Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.
    Type: Grant
    Filed: August 8, 2001
    Date of Patent: April 18, 2006
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masato Yonezawa, Hajime Kimura, Yu Yamazaki
  • Patent number: RE42157
    Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.
    Type: Grant
    Filed: February 26, 2008
    Date of Patent: February 22, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noriyuki Kaifu, Hidemasa Mizutani, Shinichi Takeda, Isao Kobayashi, Satoshi Itabashi