Abstract: A substrate is formed to include a substrate base and a substrate extension. A photodiode contacts the substrate base. The substrate extension is adjacent the photodiode. An additional device contacts the substrate extension. A sidewall spacer contacts the photodiode and the substrate extension. The additional device includes conductive elements within the substrate extension adjacent the sidewall spacer.

Abstract: A circuit for detecting an optical data signal includes a photonics substrate and first and second photodiodes formed in the photonics substrate. The first photodiode is configured to receive, via an input port formed in the photonics substrate, a first portion of the optical data signal and convert light power of the first portion of the optical data signal to generate a first current based on the optical data signal. The second photodiode is configured to output a second current without receiving any portion of the optical data signal. The second current corresponds to a dark current induced in the second photodiode. The circuit is configured to subtract the second current from the first current to generate an output signal corresponding to a power of the optical data signal without dark current induced in the first photodiode.

Abstract: A semiconductor device includes a base substrate comprising a first region and a second region, a photonics device disposed in the first region, the photonics device comprising a first doped layer disposed on the base substrate, and a second doped layer disposed on the first doped layer so that at least a portion vertically overlaps the first doped layer, the second doped layer having a first vertical thickness, and a transistor disposed in the second region, the transistor comprising a semiconductor layer disposed on the base substrate and horizontally spaced apart from the first doped layer, and a gate electrode horizontally spaced apart from the second doped layer and disposed on the semiconductor layer, disposed at the same vertical level as that of the second doped layer, and having a second vertical thickness equal to the first vertical thickness.

Abstract: A method for making a pair of photodiodes to detect low-power optical signal includes providing a waveguide including one or more branches in a silicon photonics substrate to deliver an input optical signal to the silicon photonics integrated circuit; forming a pair of nearly redundant photodiodes in silicon photonics platform in the silicon photonics substrate. coupling a first one of the pair of nearly redundant photodiodes optically to each of the one or more branches for receiving the input optical signal combined from all of the one or more branches; coupling a second one of the pair of nearly redundant photodiodes electrically in series to the first one of the pair of nearly redundant photodiodes; and drawing a current from the first one of the pair of nearly redundant photodiodes under a reversed bias voltage applied to the pair of nearly redundant photodiodes.

Abstract: Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. The different materials may be silicon containing materials and one or more III/V materials. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

Abstract: A first substrate has a plurality of photoelectric conversion units arranged in two dimensions. A second substrate has a plurality of photoelectric conversion units arranged in two dimensions. A plurality of photoelectric conversion units are arranged in a region of the second substrate corresponding to a region of the first substrate where one photoelectric conversion unit is arranged. The imaging signals based on signal charges stored in the photoelectric conversion units and the light field signals based on signal charges stored in the photoelectric conversion units are read.

Abstract: An autonomous integrated circuit (IC) includes a solar cell formed on a bottom substrate of a silicon-on-insulator (SOI) substrate as a handle substrate; an insulating layer of the SOI substrate located on top of the solar cell; and a device layer formed on a top semiconductor layer of the SOI substrate located on top of the insulating layer, wherein a top contact of the device layer is electrically connected to a bottom contact of the solar cell such that the solar cell is enabled to power the device layer.

Abstract: According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.

Abstract: According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.

Abstract: A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.

Abstract: An optical element includes a semiconductor layer having an energy band gap larger than a photon energy of light, and a plurality of electrodes in electrical contact with the semiconductor layer. At least one of the electrodes forms a Schottky junction between the electrode and the semiconductor layer; the Schottky junction has a barrier height smaller than the photon energy of the light. At least part of a junction surface between the electrode that forms the Schottky junction and the semiconductor layer includes a light irradiation surface arranged to be irradiated with the light from a surface of the semiconductor layer without the electrodes, and a portion of a coupling structure arranged to be coupled to a terahertz wave that is generated or detected through the irradiation with the light.

Abstract: A mask for partially blocking ultraviolet rays in TFT glass substrate manufacturing process is disclosed. The mask includes a panel pattern area for forming the panel patterns, and an additional pattern area for forming additional patterns in a rim of the panel pattern area. In addition, a TFT glass substrate and the manufacturing thereof are also disclosed. By arranging the additional patterns in the rim of the panel patterns, the microstructures in the rim of the panel patterns are substantially the same with that in the middle of the panel patterns.

Abstract: Photo-conducting infrared sensors are provided including a substrate (e.g., silicon) with one or more trenches formed on a first surface. An infrared-reflective film can be deposited directly or indirectly onto and conforming in shape with the first surface of the substrate. A lead chalcogenide film can be deposited directly or indirectly over the top of the infrared-reflective film and conforming in shape with the first surface of the substrate. Accordingly, the infrared-reflective film is directly or indirectly sandwiched between the substrate and the lead chalcogenide film.

Abstract: A heterogeneous stack structure is provided which includes one or more optical signal-based chips and multiple electrical signal-based chips. The optical chip(s) and the electrical chip(s) are different layers of the stack structure, and the optical chip(s) includes optical signal paths extending at least partially laterally within the optical chip(s). Electrical signal paths are provided extending between and coupling the optical chip(s) and the electrical chips. The electrical signal paths include one or more through substrate vias (TSVs) through one or more electrical chips of the multiple electrical chips in the stack structure. In one embodiment, the optical chip(s) is configured laterally to locally distribute, via one or more paths of the electrical signal paths, a timing reference signal for one or more electrical chips in the stack. Conversion between optical and electrical signals within the stack structure occurs within the optical chip(s).

Abstract: An interposer includes grooves (310) for waveguides 104 (e.g. optical fiber cables) coupled to a transducer (120). The grooves are formed by etching a cavity (410) in a substrate (130), filling the cavity with some layer (520), then etching the layer to form the grooves. The grooves can be formed in a separate structure which is then inserted into a cavity in an interposer having electrical circuitry for the transducer. The cavity has outwardly or inwardly sloped sidewalls which can serve as minors (144) or on which the minors are later formed. The substrate can be monocrystalline silicon, in which the inwardly sloped (retrograde) sidewalls are formed by a combination of different etches at least one of which is selective to certain crystal planes. Other features, including non-optical embodiments, are also provided.

Abstract: A method for manufacturing a solid state image pickup device including a first active region provided with a first conversion unit, a second active region provided with a second conversion unit, and a third active region adjoining the first and the second active regions with a field region therebetween and being provided with a pixel transistor, the method including the steps of ion-implanting first conductivity type impurity ions to form a semiconductor region serving as a potential barrier against the signal carriers at a predetermined depth in the third active region and ion-implanting second conductivity type impurity ions into the third active region with energy lower than the above-described ion-implantation energy.

Abstract: An image pickup apparatus is provided with plural light receiving areas arranged two-dimensionally, and a vertical scanning circuit comprising plural unit circuit stages arranged in the vertical direction and a horizontal scanning circuit comprising plural unit circuit stages arranged in the horizontal direction, for selecting and reading the plural light receiving areas in succession. The vertical and horizontal scanning circuits are arranged in spaces between the light receiving areas. A crossing area of the vertical and horizontal scanning circuits, in a space between the light receiving areas, is divided into two areas. A unit circuit of the horizontal scanning circuit is provided in one of the two areas. A unit circuit of the vertical scanning circuit is provided in the other of the two areas. In one embodiment, the unit circuits of the vertical scanning circuit and/or of the horizontal scanning circuit are arranged at a constant pitch.

Abstract: A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.

Abstract: A THz radiation detector comprising a vertical antenna separated from a suspended platform by an isolating thermal air gap for concentrating THz radiation energy into a smaller suspended MEMS platform upon which a thermal sensor element is located. THz photon energy is converted into electrical energy via a thermally isolated air gap between plates of a coupling capacitor that couples energy from the antenna to the thermal sensor. The capacitor plates used for capacitive coupling of the received signal realize an electro-static actuator whereby the application of a DC bias varies the coupling capacitor gap. The DC bias causes the actuator to pull the suspended platform close to the antenna to reduce the capacitive gap, increasing the coupling capacitance, to touch the antenna array thus quickly discharging the heat induced in the sensor platform or to perform advanced readout operations, such as amplitude modulation and correlated double sampling.

Abstract: An optical sensor includes: first and second light receiving elements on a semiconductor substrate; a light blocking film over the semiconductor substrate via a light transmitting film; and first and second openings corresponding to the light receiving elements and disposed in the light blocking film. First and second virtual lines are defined to extend from the centers of the first and second light receiving elements and pass through the centers of the first and second openings, respectively. At least one of elevation angles and left-right angles of the first and second virtual lines are different. The photosensitive area of the first light receiving element is larger than the aperture area of the first opening. The photosensitive area of the second light receiving element is larger than the aperture area of the second opening.

Abstract: Disclosed are a pixel, a pixel array, an image sensor including the same, and a method for driving the image sensor. The method for driving the image sensor includes starting an integration procedure of charges in a photoelectric conversion part, transferring the charges, which are integrated in the photoelectric conversion part for a first integration duration, into a charge storage part, reading a signal level of the first integration duration, transferring charges, which are integrated in the photoelectric conversion part for a second integration duration after the first integration duration, into the charge storage part, reading a signal level of the second integration duration, and calculating a light intensity by using the signal level of the first integration duration and the signal level of the second integration duration. A WDR image sensor is provided to detect all light intensities regardless of the degree of illuminance.

Abstract: Systems, devices, and methods are provided for more efficient photon detection in nuclear medical imaging. By basing the density of photosensitive microcells in photosensors on a spatial distribution of photons across the array of photosensors, the non-linearity of the photosensors' output pulses can be reduced, and the negative effects of non-uniform distribution of light from a scintillator array can be ameliorated. As a result, the positioning and linearity information of typical photosensors used in nuclear medical imaging can be improved, and better quality images are produced.

Abstract: Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.

Abstract: A semiconductor light-detecting device includes: a semi-insulating substrate; and n light-detecting elements (n is a natural number equal to or larger than 4) electrically isolated from each other and on the semi-insulating substrate. Each light-detecting element includes a conductive layer of a first conductivity type, a light absorption layer, a window layer, and an impurity diffusion region of a second conductivity type, which are laminated, one on another, on the semi-insulating substrate. The light absorption layer is a photoelectrical converter. The impurity diffusion region is located in part of the window layer and serves as a light-detecting section. A part of the conductive layer and the light absorption layer use the same material. The n light-detecting elements are not all located on a common straight line.

Abstract: To provide a semiconductor device and a driving method of the same that is capable of enlarging a signal amplitude value as well as increasing a range in which a linear input/output relationship operates while preventing a signal writing-in time from becoming long. The semiconductor device having an amplifying transistor and a biasing transistor and the driving method thereof, wherein an electric discharging transistor is provided and pre-discharge is performed.

Abstract: Apparatus, systems, and methods are described to assist in reducing dark current in an active pixel sensor. In various embodiments, a potential barrier arrangement is configured to block the flow of charge carriers generated outside a photosensitive region. In various embodiments, a potential well-potential barrier arrangement is formed to direct charge carriers away from the photosensitive region during an integration time.

Abstract: An image pickup apparatus includes light receiving areas arranged two-dimensionally. A vertical scanning circuit comprises unit circuit stages arranged in the vertical direction and a horizontal scanning circuit comprises unit circuit stages arranged in the horizontal direction, for selecting and reading light receiving areas in succession. The vertical and horizontal scanning circuits are arranged in spaces between the light receiving areas. Two or more unit circuit stages of the vertical scanning circuit are provided in a first space between the light receiving areas. Two or more unit circuit stages of the horizontal scanning circuit are provided in a second space between the light receiving areas. Two or more unit circuit stages of a scanning circuit are provided in a third space between the light receiving areas, the third space being provided in a space between the light receiving areas at a crossing area of the vertical and horizontal scanning circuits.

Abstract: Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate. An interlayer dielectric is formed on the first substrate, and comprises a lower line therein. A crystalline semiconductor layer is bonded to the interlayer dielectric. A photodiode can be formed in the crystalline semiconductor layer, and comprises a first impurity region and a second impurity region. A via hole can be formed passing through the crystalline semiconductor layer and the interlayer dielectric to expose the lower line. A plug is formed inside the first via hole to connect with only the lower line and the first impurity region. A device isolation region can be formed in the crystalline semiconductor layer to separate the photodiode according to unit pixel.

Abstract: Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.

Abstract: An electric conversion device may include A/D converters each of which includes a pulse delay circuit and an encoder, the pulse delay circuit including delay units each of which delaying a pulse signal with a delay time based on the difference between a voltage of a pixel signal and a reference voltage, the delay units being connected so that the pulse signal can circulate through the delay units, the encoder outputting a digital value based on the number of the delay units that the pulse signal passes through within a predetermined period of time. The encoder may include a latch circuit that includes latch units storing delay information, the delay information being output when the pulse signal passes through each of the delay units, an encoder unit that outputs the digital value based on the delay information, and a counter unit that counts the number of circulations.

Abstract: This disclosure concerns a memory comprising a semiconductor layer extending in a first direction; a source; a drain; a body between the source and the drain; a bit-line extending in the first direction; a first gate-dielectric on a first side-surface of the body; a first gate-electrode on the first side-surface of the body via the first gate dielectric film; a first gate line extending in the first direction, connected to a bottom of the first gate-electrode, and formed integratedly with the first gate-electrode using same material; a second gate dielectric on a second side-surface of the body; a second gate-electrode on the second side surface of the body via the second gate dielectric film; and a second gate line extending in a second direction crossing the first direction, connected to an upper portion of the second gate-electrode, and formed integratedly with the second gate-electrode using same material.

Abstract: An optical element includes a semiconductor layer having an energy band gap larger than a photon energy of light, and a plurality of electrodes in electrical contact with the semiconductor layer. At least one of the electrodes forms a Schottky junction between the electrode and the semiconductor layer; the Schottky junction has a barrier height smaller than the photon energy of the light. At least part of a junction surface between the electrode that forms the Schottky junction and the semiconductor layer includes a light irradiation surface arranged to be irradiated with the light from a surface of the semiconductor layer without the electrodes, and a portion of a coupling structure arranged to be coupled to a terahertz wave that is generated or detected through the irradiation with the light.

Abstract: The wiring arrangement length in a photoreceiving device is shortened. The photoreceiving device includes an amplifier for amplifying an output of the photoreceiving element and a photoreceiving element and they are mounted at a base member. A plurality of first bonding pads and a plurality of second bonding pads for connection to power supply are provided at both sides of a transmission path of an input or output signal of a photoreceiving element. Furthermore, at a position other than the parts arrangement surface of the base member, a plurality of first bonding pads are electrically connected to a plurality of second bonding pads.

Abstract: A method of manufacturing a solar cell module, including: forming a laminated body including a first protective member, a first sealing member having a first melting point, a plurality of solar cells, a second sealing member having a second melting point higher than the first melting point, and the second protective member; heating the first sealing member to a temperature equal to or higher than the first melting point but lower than the second melting point; and heating the second sealing member to a temperature equal to or higher than the second melting point. In forming the laminated body, the second sealing member is arranged to form a surface including a plurality of convex portions faces the first sealing member.

Abstract: A sensor chip based on the WCSPR effect and an array thereof are disclosed. The sensor chip is a multilayer structure comprising a substrate, a dielectric waveguide layer (26) disposed on the substrate and a first metal layer (27) disposed on the dielectric waveguide layer (26), wherein parameters of physical properties of the dielectric waveguide layer (26) are tunable.

Abstract: The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode.

Abstract: A method of manufacturing a CMOS image sensor comprising forming a first insulating film on a silicon semiconductor substrate which includes a metal pad; selectively etching the first insulating film, so as to form a first insulating film pattern with a first opening which exposes the metal pad; forming a metal pad protective film in the first opening portion with a predetermined thickness; forming a second insulating film on the first insulating film pattern and metal pad protective film; selectively etching the second insulating film, so as to form a second insulating film pattern which includes a second opening which exposes the metal pad protective film; forming a color filter array (CFA) on the second insulating film pattern; forming micro lenses on the CFA; and performing an etching process in order to remove the metal pad protective film so as to form a metal pad opening.

Abstract: A method for providing an optical erase memory structure including: forming a metal-insulator-metal memory cell; positioning a light emitting diode adjacent to the metal-insulator-metal memory cell; and emitting a light emission from the light emitting diode for erasing the metal-insulator-metal memory cell.

Abstract: The invention provides an image pickup apparatus which is provided with plural light receiving areas arranged two-dimensionally, and a vertical scanning circuit composed of plural unit circuit stages arranged in the vertical direction and a horizontal scanning circuit composed of plural unit circuit stages arranged in the horizontal direction, for selecting and reading the plural light receiving areas in succession and in which the vertical scanning circuit and the horizontal scanning circuit are arranged in spaces between the light receiving areas, wherein a crossing area of the vertical scanning circuit and the horizontal scanning circuit, in a space between the light receiving areas, is divided into two areas, and at least a unit circuit of the horizontal scanning circuit is provided in one of the two areas while at least a unit circuit of the vertical scanning circuit is provided in the other of the two areas, or an image pickup apparatus which is provided with plural light receiving areas arranged two-di

Abstract: A photodetector with internal gain comprising a semiconductor structure in which impact ionization events are produced mostly by minority charge carriers; a first biasing contact and a second biasing contact located in the semiconductor structure; a means of defining, in the semiconductor structure, a photon collection region close to first biasing contact; a P-N type junction formed in the semiconductor structure between the two biasing contacts and close to the second biasing contact; and a collector contact which is located in the P-N junction and used to collect current in the P-N junction.

Abstract: A semiconductor device for sensing infrared radiation is provided. In an embodiment, the semiconductor device includes a sensor configuration which includes a light receiving portion for converting incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; and a sensing circuit which includes a common mode current providing portion and a current subtraction portion, wherein the common mode current providing portion outputs a common mode current related to a value of a current which is flowing in the sensing portion when there is no incident light and the current subtraction portion outputs subtraction currents for the common mode current and a sensing current related to a current output from the sensing portion.

Abstract: The present invention provides a method and apparatus for providing electro-static discharge (ESD) protection between a first and a second circuit node. One embodiment of the ESD protection circuit includes one or more steering diodes that generate electromagnetic radiation and couple the first circuit node to ground in response to a voltage applied to the first circuit node. The ESD protection circuit also includes a latch circuit that couples the first circuit node to ground in response to the electromagnetic radiation generated by the steering diode(s).

Abstract: Elevated crystal silicon photosensors for imagers pixels, each photosensor formed of crystal silicon above the surface of a substrate that has pixel circuitry formed thereon. The imager has a high fill factor and good imaging properties due to the crystal silicon photosensor.

Abstract: The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode.

Abstract: Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (1 and 2) to prevent electric charges from being induced to the photodiodes (1 and 2) by electromagnetic waves entered from an external. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes (1 and 2), respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process.

Abstract: An open portion is provided to an interlayer insulation film so as to correspond to a photoreceptor part of an optical detection device. A partition wall for surrounding the open portion (120) is formed by a metal material inside a wiring structure layer (90) along the boundary between the photoreceptor part (4) and a circuit part (6). The partition wall is formed by a contact structure having a multi-level structure with respect to a separation region (74) disposed on the external periphery of the photoreceptor part (4). The partition wall prevents moisture absorption and light penetration from the wall surface of the open portion, and suppresses wiring degradation or fluctuation of the characteristics of the circuit elements on the periphery of the photoreceptor part.

Abstract: In order to provide a photothyristor having high breakdown voltage and less-varying light sensitivity by improving the sensitivity and the breakdown voltage of the device while maintaining the device small, the device includes a silicon substrate, a transistor portion including an anode region, a gate region and a cathode region and placed on a first main surface of the silicon substrate, a light-receiving portion for receiving light from the outside, and an electrode for establishing an ohmic contact between the anode region and the cathode region. The light receiving portion includes an oxygen-doped polysilicon film overlaid on the silicon substrate through a transparent insulating film and is disposed to surround the transistor portion. The electrode is placed above the transistor portion and has a double-structure consisting of a center portion and an outer portion surrounding the center portion, and the center portion and the outer portion are electrically connected.

Abstract: In a light detector that is a semiconductor integrated circuit, a wiring structure is disposed on a semiconductor substrate along a periphery of a rectangular region that corresponds to a light receiver, and an interlayer insulating film composed of an SOG film is layered over the wiring structure. In this structure, the interlayer insulating film is thicker at a corner than at a center part of the light receiver. In order to increase efficiency of the incidence of light on the light receiver, the planar shape of the open part is formed so that the corners of the rectangle that surrounds the wiring structure are removed when the interlayer insulating film is etched and the open part is formed (i.e., yielding an octagonal shape).

Abstract: Elevated crystal silicon photosensors for imagers pixels, each photosensor formed of crystal silicon above the surface of a substrate that has pixel circuitry formed thereon. The imager has a high fill factor and good imaging properties due to the crystal silicon photosensor.

Abstract: Methods and apparatus are provided for reducing the overall radiation hardness of a semiconductor chip. A radiation detector and a failure memory are provided. A disable signal or signals is produced by the failure memory. The disable signal is a required input to a user logic function, such as an off chip driver, an off chip receiver, a clock, or a static random access memory. When the radiation detector detects radiation, that detection is stored in the failure memory. The disable signal, when active, causes some or all of the user function to be inoperative. This invention is particularly important when the semiconductor chip is produced in a silicon on insulator (SOI) Complementary Metal Oxide Semiconductor (CMOS) process, which is naturally radiation resistant.