Abstract: A solid-state imaging device includes a photoelectric conversion unit that is formed on a semiconductor substrate, a reading unit that reads signal charges of the photoelectric conversion unit, a gate insulating film and an electrode disposed thereon that constitute the reading unit, a light shielding film that covers the electrode, and an antireflection film that is formed on the photoelectric conversion unit and is constituted by films of four or more layers. The film of the lower layer of the antireflection film is also used as a stopper film during patterning, and a gap between the end of the light shielding film and the semiconductor substrate which is defined by interposing a plurality of films of the lower layer of the antireflection film is set so as to be smaller than the thickness of the gate insulating film.

Abstract: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

Abstract: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

Abstract: An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a semiconductor substrate that includes photodiodes arranged for each unit pixel; an interlayer dielectric layer and metal wirings disposed on the semiconductor substrate; and a photorefractive unit that is formed on the periphery of an optical path incident on the photodiodes. The photorefractive unit has a lower refractive index than the interlayer dielectric layer. The slantly incident light can be incident on the photodiodes, while maintaining the slanted optical path as it is. The light sensitivity of the photodiodes can be improved, thereby improving image quality.

Abstract: In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

Abstract: A solid-state image pickup device includes a pixel array area in which pixels each including a photoelectric conversion element are two-dimensionally arranged; first control means for performing control such that signals of pixels in a desired region of the pixel array area are sequentially read row by row; and second control means for performing control such that, when the signals of the pixels in the desired region are sequentially read row by row by the first control means, pixels in particular regions below and above the desired region are sequentially reset row by row.

Abstract: Disclosed herein is a solid-state image pickup device which includes: a light-receiving unit for photoelectric conversion of incident light; and a charge transfer unit of an n-channel insulating gate type configured to transfer a signal charge photoelectrically converted in the light-receiving unit; wherein the charge transfer unit has an insulating film formed on a transfer electrode and having a negative fixed charge.

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: Methods of packaging microelectronic imagers and packaged microelectronic imagers. An embodiment of such a method can include providing an imager workpiece having a plurality of imager dies arranged in a die pattern and providing a cover substrate through which a desired radiation can propagate. The imager dies include image sensors and integrated circuitry coupled to the image sensors. The method further includes providing a spacer having a web that includes an adhesive and has openings arranged to be aligned with the image sensors. For example, the web can be a film having an adhesive coating, or the web itself can be a layer of adhesive. The method continues by assembling the imager workpiece with the cover substrate such that (a) the spacer is between the imager workpiece and the cover substrate, and (b) the openings are aligned with the image sensors. The attached web is not cured after the imager workpiece and the cover substrate have both been adhered to the web.

Abstract: An HCCD includes a channel 21 that transfers electric charges in an X direction, a channel 25 that transfers the electric charges in a Z1 direction, a channel 23 that transfers the electric charges in a Z2 direction, and a channel 22 that connects the channels 23, 25 to the channel 21. The following relation is satisfied in impurity concentration of the channels: channel 21 channel 22 channel 23, 25. A fixed DC voltage is applied to branch electrodes 12a, 12b above the channel 22. The channel 22 has protrusion portions 19 that protrude inward from an outer circumference, which connects T1 and T2, and an outer circumference, which connects T3 and T4. The protrusion portions 19 causes charges below the transfer electrode 11b to move near the center of the channel 22 in a Y direction. Thereby, the travel distance of the charges in the channel 22 is reduced.

Abstract: A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 and 14) embedded under the optical sensors (4). The semiconductor substrate (6) is constructed by laminating a support substrate (16) composed of silicon, a buffer layer (18), and a thin silicon layer (20) composed of single-crystal silicon. p? regions (26) (overflow barrier) and n-type regions (28) which function as transfer paths are formed under the optical sensors (4). The first and the second transfer electrodes (12 and 14) are disposed between the buffer layer (18) and the n-type regions (28), and an insulating film (30) is interposed between the n-type regions (28) and the first and the second transfer electrodes (12 and 14). In this structure, the light-receiving area is large since the transfer electrodes are not disposed in the front region.