Charge Coupled Imager (epo) Patents (Class 257/E27.15)
  • Patent number: 10396113
    Abstract: A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.
    Type: Grant
    Filed: December 2, 2016
    Date of Patent: August 27, 2019
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Tetsuji Yamaguchi
  • Patent number: 9591244
    Abstract: A solid-state imaging device comprises a plurality of hybrid pixels. The hybrid pixel comprises a photodiode, which has a charge storage region and a photoelectric conversion region, and a transparent electrode. The transparent electrode applies a voltage to the charge storage region to modulate a potential with respect to a charge. Thereby the width of the charge storage region is reduced to form an effective charge storage region. Unless potentially modulated, the hybrid pixel functions as a normal pixel. Upon the potential modulation, the hybrid pixel functions as a phase detection pixel, which selectively stores the charge generated in a part of the photoelectric conversion region.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: March 7, 2017
    Assignee: FUJIFILM Corporation
    Inventor: Syunsuke Tanaka
  • Patent number: 9445020
    Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: September 13, 2016
    Assignee: Sony Corporation
    Inventors: Takahisa Ueno, Kazuya Yonemoto, Ryoji Suzuki, Koichi Shiono
  • Patent number: 9041142
    Abstract: A semiconductor device and an operating method for the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a third doped region, a fourth doped region and a first gate structure. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite to the first type conductivity. The first doped region is surrounded by the second doped region. The third doped region has the first type conductivity. The fourth doped region has the second type conductivity. The first gate structure is on the second doped region. The third doped region and the fourth doped region are in the second doped region and the first doped region on opposing sides of the first gate structure respectively.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: May 26, 2015
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ying-Chieh Tsai, Wing-Chor Chan, Jeng Gong
  • Patent number: 9029969
    Abstract: There is provided an imaging element including a transmission channel region provided in an optical black pixel region shielded from light from an outside of a semiconductor substrate by a light shielding film, for transmitting a charge existing inside the semiconductor substrate of the optical black pixel region to an outside of the optical black pixel region.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: May 12, 2015
    Assignee: Sony Corporation
    Inventor: Suzunori Endo
  • Patent number: 8975668
    Abstract: A structure and method of manufacture is disclosed for a backside thinned imager that incorporates a conformal, Al2O3, low thermal budget, surface passivation. This passivation approach facilitates fabrication of backside thinned, backside illuminated, silicon image sensors with thick silicon absorber layer patterned with vertical trenches that are formed by etching the exposed back surface of a backside-thinned image sensor to control photo-carrier diffusion and optical crosstalk. A method of manufacture employing conformal, Al2O3, surface passivation approach is shown to provide high quantum efficiency and low dark current while meeting the thermal budget constraints of a finished standard foundry-produced CMOS imager.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 10, 2015
    Assignee: Intevac, Inc.
    Inventors: Kenneth A. Costello, Edward Yin, Michael Wayne Pelczynski, Verle W. Aebi
  • Patent number: 8952432
    Abstract: Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.
    Type: Grant
    Filed: March 17, 2011
    Date of Patent: February 10, 2015
    Assignee: Sony Corporation
    Inventors: Yusuke Oike, Takahiro Kawamura, Shinya Yamakawa, Ikuhiro Yamamura, Takashi Machida, Yasunori Sogoh, Naoki Saka
  • Patent number: 8878264
    Abstract: A global shutter pixel cell includes a serially connected anti-blooming (AB) transistor, storage gate (SG) transistor and transfer (TX) transistor. The serially connected transistors are coupled between a voltage supply and a floating diffusion (FD) region. A terminal of a photodiode (PD) is connected between respective terminals of the AB and the SG transistors; and a terminal of a storage node (SN) diode is connected between respective terminals of the SG and the TX transistors. A portion of the PD region is extended under the SN region, so that the PD region shields the SN region from stray photons. Furthermore, a metallic layer, disposed above the SN region, is extended downwardly toward the SN region, so that the metallic layer shields the SN region from stray photons. Moreover, a top surface of the metallic layer is coated with an anti-reflective layer.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: November 4, 2014
    Assignee: Aptina Imaging Corporation
    Inventors: Sergey Velichko, Jingyi Bai
  • Patent number: 8785986
    Abstract: The invention describes the solid-state image sensor array and in particular describes in detail the junction gate BCMD pixel sensor array that can be used in the back side illuminated mode as well as in the front side illuminated mode. The pixels generally do not need addressing transistors and the reset is accomplished in a vertical direction to the junction gate, so no additional reset transistor is needed for this purpose. As a result of this innovation the pixel maintains large charge storage capacity when its size is reduced, has low noise due to the nondestructive charge readout, and no RTS noise. The pixel interface generated dark current is also drained to the gate, so the image sensor array operates with very low dark current noise even at high temperatures. The junction gate also serves as a drain for the overflow charge.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: July 22, 2014
    Assignee: Aptina Imaging Corporation
    Inventors: Jaroslav Hynecek, Hirofumi Komori
  • Patent number: 8785982
    Abstract: A unit pixel of a depth sensor including a light-intensity output circuit configured to output a pixel signal according to a control signal, the pixel signal corresponding to a first electric charge and a second electric charge, a first light-intensity extraction circuit configured to generate the first electric charge and transmit the first electric charge to the light-intensity output circuit, the first electric charge varying according to an amount of light reflected from a target object and a second light-intensity extraction circuit configured to generate the second electric charge and transmit the second electric charge to the light-intensity output circuit, the second electric charge varying according to the amount of reflected light. The light-intensity output circuit includes a first floating diffusion node. Accordingly, it is possible to minimize waste of a space, thereby manufacturing a small-sized pixel.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: July 22, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woo Joo Kim, Hyoung Soo Ko, Yoon Dong Park, Jung Bin Yun
  • Patent number: 8716760
    Abstract: A charge transfer device formed in a semiconductor substrate and including an array of electrodes forming rows and columns, wherein: the electrodes extend, in rows, in successive grooves with insulated walls, disposed in the substrate thickness and parallel to the charge transfer direction.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: May 6, 2014
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventor: François Roy
  • Patent number: 8692253
    Abstract: According to one embodiment, a flat panel display includes a first mounting portion including a first input pad and a first output pad, a second mounting portion including a second input pad and a second output pad, a first common terminal and a second common terminal, which have a common potential, and a guard ring wiring which is formed in a manner to extend from the first common terminal, to pass between the first input pad and the first output pad of the first mounting portion, to pass between the second input pad and the second output pad of the second mounting portion, and to reach the second common terminal, the guard ring wiring including a first resistor element of a first resistance value and a second resistor element of a second resistance value which is higher than the first resistance value.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: April 8, 2014
    Assignee: Japan Display Inc.
    Inventor: Akira Yokogawa
  • Patent number: 8669134
    Abstract: Provided is a method of manufacturing a solid-state imaging device including: forming a first pattern having an independent island shape configured by an optical filter material on some of photoelectric conversion units among a plurality of photoelectric conversion units arranged on the surface of a substrate; forming a mixed color prevention layer on a side wall of the first pattern; and forming a second pattern having an independent island shape configured by an optical filter material on the rest of the photoelectric conversion units among the plurality of photoelectric conversion units while the mixed color prevention layer is closely disposed between the first pattern and the second pattern.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: March 11, 2014
    Assignee: Sony Corporation
    Inventors: Tomomi Ito, Ryoji Suzuki, Taichi Natori
  • Patent number: 8643063
    Abstract: A charge transfer device formed in a semiconductor substrate and including an array of electrodes distributed in rows and columns, wherein: each electrode is formed in a cavity with insulated walls formed of a groove which generally extends in the row direction, having a first end closer to an upper row and a second end closer to a lower row; and the electrodes of two adjacent rows are symmetrical with respect to a plane orthogonal to the sensor and comprising the direction of a row.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: February 4, 2014
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventor: François Roy
  • Publication number: 20130181258
    Abstract: An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.
    Type: Application
    Filed: January 12, 2012
    Publication date: July 18, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shiu-Ko JangJian, Kei-Wei CHEN, Szu-An WU, Ying-Lang WANG
  • Publication number: 20130175582
    Abstract: An image sensor includes a transfer transistor including a vertical gate portion extending in a depth direction of a substrate in an active region of the substrate and photodiode regions located at positions of different depths with respect to a top surface of the substrate in the active region. At least one color adjustment path extends between at least two photodiode regions of the photodiode regions and provides a charge movement path between the at least two photodiode regions.
    Type: Application
    Filed: July 30, 2012
    Publication date: July 11, 2013
    Inventors: Hisanori Ihara, Chang-rok Moon
  • Patent number: 8471351
    Abstract: Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A.
    Type: Grant
    Filed: August 4, 2011
    Date of Patent: June 25, 2013
    Assignee: Panasonic Corporation
    Inventors: Mitsuyoshi Mori, Toru Okino, Yusuke Otake, Hitomi Fujiwara
  • Patent number: 8466498
    Abstract: In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer 2 is thicker at both side portions than in a central region. A pair of overflow drains 1N is formed at a boundary between a central region and both side portions of an N-type semiconductor region 1C. Each overflow drain 1N extends along the electron transfer direction of the multiplication register EM. Overflow gate electrodes G extend from the thin portion to the thick portion of the insulating layer 2. The overflow gate electrodes G are disposed between both ends of each transfer electrode 8 in a longitudinal direction and the insulating layer 2, and they also function as shield electrodes for each electrode 8 (8A and 8B).
    Type: Grant
    Filed: January 27, 2010
    Date of Patent: June 18, 2013
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hisanori Suzuki, Yasuhito Yoneta, Shin-ichiro Takagi, Kentaro Maeta, Masaharu Muramatsu
  • Patent number: 8445970
    Abstract: The present invention discloses a bipolar device. An emitter is formed in a semiconductor substrate. A collector is laterally spaced from the emitter in the substrate. A gate terminal is formed on the substrate, defining a space between the emitter and the collector. An extrinsic base is formed on the substrate with a predetermined distance from either the emitter or the collector, wherein the base, the emitter, the collector and the gate terminal are located in an active area defined by a hole in a surrounding isolation structure in the substrate.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: May 21, 2013
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Shine Chung
  • Publication number: 20130119438
    Abstract: A unit pixel of a depth sensor including a light-intensity output circuit configured to output a pixel signal according to a control signal, the pixel signal corresponding to a first electric charge and a second electric charge, a first light-intensity extraction circuit configured to generate the first electric charge and transmit the first electric charge to the light-intensity output circuit, the first electric charge varying according to an amount of light reflected from a target object and a second light-intensity extraction circuit configured to generate the second electric charge and transmit the second electric charge to the light-intensity output circuit, the second electric charge varying according to the amount of reflected light. The light-intensity output circuit includes a first floating diffusion node. Accordingly, it is possible to minimize waste of a space, thereby manufacturing a small-sized pixel.
    Type: Application
    Filed: September 13, 2012
    Publication date: May 16, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Woo Joo KIM, Hyoung Soo KO, Yoon Dong PARK, Jung Bin YUN
  • Publication number: 20130076951
    Abstract: There is provided an imaging element including a transmission channel region provided in an optical black pixel region shielded from light from an outside of a semiconductor substrate by a light shielding film, for transmitting a charge existing inside the semiconductor substrate of the optical black pixel region to an outside of the optical black pixel region.
    Type: Application
    Filed: August 13, 2012
    Publication date: March 28, 2013
    Applicant: Sony Corporation
    Inventor: Suzunori ENDO
  • Publication number: 20130069119
    Abstract: Provided is a solid-state imaging device. Two unit cells are prepared each having three pixels and sharing an output circuit. One of the basic blocks is rotated by 180° such that a reset drain is shared, resulting in a 6-pixel 1-cell, and the cells are disposed in a square lattice pattern or checkerboard pattern. Thus, element isolation regions between the pixels and the output circuit disposed adjacent thereto are minimized, and the number of wirings disposed around the pixels is reduced. As a result, a margin for white scratches and saturation charge amounts may be increased despite the miniaturization of cells.
    Type: Application
    Filed: March 15, 2012
    Publication date: March 21, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Hirokazu SEKINE
  • Publication number: 20130049075
    Abstract: A solid-state imaging device having a protective wiring inserted between adjacent pixel pairs so that the generation of electrical charges caused by a voltage variation in adjacent pixel pairs may be restrained, and a method for manufacturing the same. A solid-state imaging device with an additional protective wiring may be provided between pixel pairs to restrain the generation of electric charges within one of the pixel pairs caused by a voltage variation in the other pixel pair. A method for manufacturing a solid-state imaging device with an additional protective wiring which is provided between pixel pairs to restrain the generation of electric charges within one of the pixel pairs caused by a voltage variation in the other pixel pair.
    Type: Application
    Filed: July 10, 2012
    Publication date: February 28, 2013
    Applicant: Dongbu HiTek Co., Ltd.
    Inventor: An Do KI
  • Patent number: 8384133
    Abstract: In a solid state imaging device, and a method of manufacture thereof, the efficiency of the transfer of available photons to the photo-receiving elements is increased beyond that which is currently available. Enhanced anti-reflection layer configurations, and methods of manufacture thereof, are provided that allow for such increased efficiency. They are applicable to contemporary imaging devices, such as charge-coupled devices (CCDs) and CMOS image sensors (CISs). In one embodiment, a photosensitive device is formed in a semiconductor substrate. The photosensitive device includes a photosensitive region. An anti-reflection layer comprising silicon oxynitride is formed on the photosensitive region. The silicon oxynitride layer is heat treated to increase a refractive index of the silicon oxynitride layer, and to thereby decrease reflectivity of incident light at the junction of the photosensitive region.
    Type: Grant
    Filed: July 17, 2009
    Date of Patent: February 26, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Chang Rok Moon
  • Publication number: 20130027596
    Abstract: Electronic devices may include monochrome image sensors having multi-storage-node image sensor pixels. A multi-storage-node image pixel may be synchronized with artificial light sources of different colors and may include a floating diffusion region and multiple storage regions. The image pixels may be sequentially exposed to each light color and may store charge associated with each color in each of the different storage regions. After exposure, the stored charge may be transferred to the floating diffusion region and subsequently read out using readout circuitry. The image pixel may have one set of storage gates that can perform both storage and transfer functions. Alternatively, the image pixel may have a first set of transfer gates for transferring charge to the storage regions and a second set of transfer gates for transferring charge from the storage regions to the floating diffusion region.
    Type: Application
    Filed: July 25, 2012
    Publication date: January 31, 2013
    Inventor: Chung Chun Wan
  • Publication number: 20130026384
    Abstract: Electronic devices may include time-of-flight image pixels. A time-of-flight image pixel may include first and second charge storage regions coupled to a photosensor and a transfer transistor with a gate terminal coupled to the first storage region. An electronic device may further include a light pulse emitter configured to emit pulses of light to be reflected by objects in a scene. Reflected portions of the emitted pulses of light may be captured along with background light by the time-of-flight image pixels. Time-of-flight image pixels may be configured sense the time-of-flight of the reflected portions of the emitted pulses. The electronic device may include processing circuitry configured to use the sensed time-of-flight of the reflected portions to generate depth images of a scene. Depth images may include depth-image pixel values that contain information corresponding to the distance of the objects in the scene from the electronic device.
    Type: Application
    Filed: October 20, 2011
    Publication date: January 31, 2013
    Inventors: Dongsoo Kim, Jae Eun Lim, Kwangbo Cho
  • Patent number: 8361824
    Abstract: A lens forming method according to the present invention for forming lenses capable of focusing light on a plurality of respective photoelectric conversion sections constituting of a semiconductor apparatus is described. The method includes a lens forming step of processing a lens forming material, in which an average gradient of a ? curve indicating a residual film thickness with respect to the amount of irradiation light is between ?15 and ?0.8 nm·cm2/mJ within the range of a residual film ratio of 10 to 50% or within the range of the amount of irradiation light of 55 to 137 mJ/cm2 into a lens surface shape, using a photomask with an optical transmittance that is varied according to a lens surface shape, as an exposure mask.
    Type: Grant
    Filed: May 5, 2010
    Date of Patent: January 29, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Junichi Nakai
  • Publication number: 20130020465
    Abstract: Disclosed are a pixel, a pixel array, an image sensor including the same, and a method for driving the image sensor. The method for driving the image sensor includes starting an integration procedure of charges in a photoelectric conversion part, transferring the charges, which are integrated in the photoelectric conversion part for a first integration duration, into a charge storage part, reading a signal level of the first integration duration, transferring charges, which are integrated in the photoelectric conversion part for a second integration duration after the first integration duration, into the charge storage part, reading a signal level of the second integration duration, and calculating a light intensity by using the signal level of the first integration duration and the signal level of the second integration duration. A WDR image sensor is provided to detect all light intensities regardless of the degree of illuminance.
    Type: Application
    Filed: September 27, 2011
    Publication date: January 24, 2013
    Applicant: LG Innotek Co., Ltd.
    Inventors: Seung Hoon Sa, Woon Il Choi
  • Publication number: 20130001650
    Abstract: The present invention provides a solid-state imaging device in which high S/N is achieved. A solid-state imaging device includes a photodiode, a transfer transistor, a floating diffusion, a floating diffusion wiring, an amplifying transistor, a power line, and first output signal lines, in which the first output signal lines are formed one on each side of the floating diffusion wiring in a layer having the floating diffusion wiring formed on a semiconductor substrate, and the power line is formed above the floating diffusion wiring.
    Type: Application
    Filed: September 12, 2012
    Publication date: January 3, 2013
    Applicant: PANASONIC CORPORATION
    Inventor: Hirohisa Ohtsuki
  • Publication number: 20120267692
    Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
    Type: Application
    Filed: July 3, 2012
    Publication date: October 25, 2012
    Applicant: Sony Corporation
    Inventors: Ryoji Suzuki, Keiji Mabuchi, Tomonori Mori
  • Publication number: 20120267690
    Abstract: The present invention relates to a solid-state image pickup device. The device includes a first substrate including a photoelectric conversion element and a transfer gate electrode configured to transfer charge from the photoelectric conversion element, a second substrate having a peripheral circuit portion including a circuit configured to read a signal based charge generated in the photoelectric conversion element, the first and second substrates being laminated. The device further includes a multilayer interconnect structure, disposed on the first substrate, including an aluminum interconnect and a multilayer interconnect structure, disposed on the second substrate, including a copper interconnect.
    Type: Application
    Filed: December 22, 2010
    Publication date: October 25, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Nobuyuki Endo, Tetsuya Itano, Kazuo Yamazaki, Kyouhei Watanabe, Takeshi Ichikawa
  • Patent number: 8293561
    Abstract: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: October 23, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takanori Watanabe, Tetsuya Itano, Mahito Shinohara
  • Publication number: 20120248291
    Abstract: A unit pixel has a light receiving device containing a photoelectric conversion element for detecting a light to generate photoelectrons. The light receiving device contains a plurality of photoelectron distributors, which each have a first transfer unit for transferring the photoelectrons generated in the photoelectric conversion element, a photoelectron hold unit for temporarily holding the photoelectrons generated in the photoelectric conversion element, a second transfer unit for transferring the photoelectrons held in the photoelectron hold unit, and a floating diffusion layer for storing the transferred photoelectrons and converting the photoelectrons to a voltage. The unit pixel contains a reset transistor for resetting the potential of the floating diffusion layer to a reference potential and a photoelectron discharger for discharging the photoelectrons generated in the photoelectric conversion element.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 4, 2012
    Applicant: HONDA MOTOR CO., LTD.
    Inventors: Tomoyuki KAMIYAMA, Keisuke KOREKADO
  • Publication number: 20120199883
    Abstract: An N-type semiconductor region and a floating diffusion region are disposed in an active region. A transfer gate electrode for transferring charges from a PD to an FD is disposed on a semiconductor substrate through an insulator. A part of the N-type semiconductor region constituting the PD and a part of the transfer gate electrode are overlapped with each other. A P-type semiconductor region is disposed in the active region. The P-type semiconductor region and the portion overlapped with the transfer gate electrode of the N-type semiconductor region are disposed adjacent to each other in the direction parallel to the interface of the semiconductor substrate and the insulator. The position of the impurity concentration peak of the N-type semiconductor region and the position of the impurity concentration peak of the P-type semiconductor region are different from each other in depth.
    Type: Application
    Filed: January 27, 2012
    Publication date: August 9, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Masahiro Kobayashi
  • Publication number: 20120200842
    Abstract: A first photoelectric conversion element, which detects light and converts the light into photoelectrons has: one MOS diode having an electrode formed on a semiconductor base body with an insulator therebetween; and a plurality of embedded photodiodes formed in the semiconductor base body. The electrode of the MOS diode has, when viewed from the upper surface, a comb-like shape wherein a plurality of branch portions are branched from one electrode portion. Each of the embedded photodiodes is disposed to nest between the branch portions of the electrode when viewed from the upper surface.
    Type: Application
    Filed: October 1, 2010
    Publication date: August 9, 2012
    Applicant: HONDA MOTOR CO., LTD.
    Inventors: Tomoyuki Kamiyama, Keisuke Korekado
  • Publication number: 20120187455
    Abstract: The sensitivity of a photosensor is improved without decreasing read-out efficiency. The photosensor includes: a photodiode (D1) that converts received light into an electric current; a light shielding film (LS) that generates a parasitic capacitance between the photodiode (D1) and itself, a control signal line (RWST) that supplies a storage node (INT) with a reset signal and a read-out signal via the photodiode (D1); and a transistor (M2) connected with the storage node (INT) and an output line (OUT) for outputting, to the output line (OUT), an output signal corresponding to the potential of the storage node (INT) in response to the read-out signal.
    Type: Application
    Filed: July 26, 2010
    Publication date: July 26, 2012
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Christopher Brown, Kohei Tanaka
  • Publication number: 20120188431
    Abstract: A solid-state image pickup device includes: a photoelectric conversion portion formed on a substrate and composed of a photodiode; an image pickup area in which plural pixels each including a reading-out electrode for reading out signal electric charges generated and accumulated in the photoelectric conversion portion are formed; and a light blocking film having an opening portion right above the photoelectric conversion portion in an effective pixel area of the image pickup area, and light-blocking said photoelectric conversion portion in an OB pixel area of the image pickup area, in which a film deposited between the light blocking film and the substrate right above the photoelectric conversion portion in the OB pixel area is composed of only a silicon oxide film.
    Type: Application
    Filed: December 7, 2011
    Publication date: July 26, 2012
    Applicant: Sony Corporation
    Inventor: Kaori Takimoto
  • Publication number: 20120188397
    Abstract: A solid-state imaging element includes a wiring layer; a charge accumulation unit including a semiconductor layer provided on the wiring layer; and a photoelectric conversion film provided on the semiconductor layer, wherein a pinning layer of a conductivity type opposite to a conductivity type of the charge accumulation unit, the pinning layer including an opening, is provided in a region of the charge accumulation unit, the region being located at an interface between the charge accumulation unit and the photoelectric conversion film.
    Type: Application
    Filed: January 5, 2012
    Publication date: July 26, 2012
    Applicant: SONY CORPORATION
    Inventor: Kazuo Ohta
  • Publication number: 20120181582
    Abstract: A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
    Type: Application
    Filed: March 27, 2012
    Publication date: July 19, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ryuichi Mishima, Mineo Shimotsusa, Hiroaki Naruse
  • Publication number: 20120181581
    Abstract: Image sensor arrays may include bulk-charge-modulated-device (BCMD) sensor pixels. The BCMD sensor pixels may be used in back-side-illuminated (BSI) image sensors. A BCMD sensor pixel need not include a dedicated addressing transistor. The BCMD sensor pixel may include a gated drain reset (GDR) structure that is used to perform reset operations. The GDR structure may be shared among multiple pixels, which provides increased charge storage capacity for high resolution image sensors. A negative back body bias may be applied to the BCMD pixel array, allowing the depletion region under each BCMD pixel to extend all the way to the back silicon surface. Extending the depletion region by negatively biasing the back silicon surface may serve to minimize pixel crosstalk.
    Type: Application
    Filed: January 18, 2011
    Publication date: July 19, 2012
    Inventor: Jaroslav Hynecek
  • Publication number: 20120175636
    Abstract: According to example embodiments, a photodiode system may include a substrate, and at least one photodiode in the substrate, and a wideband gap material layer on a first surface of the substrate. The at least one photodiode may be between an insulating material in a horizontal plane. According to example embodiments, a back-side-illumination (BSI) CMOS image sensor and/or a solar cell may include a photodiode device. The photodiode device may include a substrate, at least one photodiode in the substrate, a wide bandgap material layer on a first surface of the substrate, and an anti-reflective layer (ARL) on the wide bandgap material layer.
    Type: Application
    Filed: November 21, 2011
    Publication date: July 12, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Hisanori Ihara
  • Publication number: 20120175686
    Abstract: A solid-state imaging device including: a substrate; a light-receiving part; a second-conductivity-type isolation layer; a detection transistor; and a reset transistor.
    Type: Application
    Filed: March 21, 2012
    Publication date: July 12, 2012
    Applicant: SONY CORPORATION
    Inventor: Isao Hirota
  • Publication number: 20120168608
    Abstract: A solid-state imaging device of the present invention is capable of thinning signals for each column. The solid-state imaging device includes: photo diodes, a drain into which charges transferred by first column CCDs are swept-off, and transfer control units each of which is provided to the corresponding first column CCDs, and transfers, to a row CCD and to the drain, the charges transferred by the corresponding first column CCDs. Each of the transfer control units includes: a second column CCD which transfers, in a column direction, the charges transferred by the first column CCDs corresponding to the transfer control unit, and a column CCD terminal gate which is provided between the second column CCD and the row CCD, and forms a potential barrier between the second column CCD and the row CCD.
    Type: Application
    Filed: December 28, 2011
    Publication date: July 5, 2012
    Applicant: PANASONIC CORPORATION
    Inventors: Hiroshi MATSUMOTO, Mamoru IESAKA, Sei SUZUKI, Katsuya FURUKAWA
  • Publication number: 20120154650
    Abstract: A solid-state image sensor includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type that is arranged to contact a lower face of the first semiconductor region and functions as a charge accumulation region, a third semiconductor region including side faces surrounded by the second semiconductor region, a fourth semiconductor region of the second conductivity type that is arranged apart from the second semiconductor region, and a transfer gate that forms a channel to transfer charges accumulated in the second semiconductor region to the fourth semiconductor region. The third semiconductor region is one of a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type whose impurity concentration is lower than that in the second semiconductor region.
    Type: Application
    Filed: November 30, 2011
    Publication date: June 21, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Mahito Shinohara
  • Publication number: 20120147241
    Abstract: A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accummulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.
    Type: Application
    Filed: February 22, 2012
    Publication date: June 14, 2012
    Applicant: SONY CORPORATION
    Inventors: Tetsuji Yamaguchi, Yasushi Maruyama, Takashi Ando, Susumu Hiyama, Yuko Ohgishi
  • Publication number: 20120132965
    Abstract: A plurality of transistors in which ratios of a channel length L to a channel width W, ?=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion device and an internal resistor is connected to each of the output side transistors 105a to 105c in series. The sum of currents which flow through the plurality of transistors and the internal resistor is output, whereby a transistor with large amount of ? can be driven in a linear range with low illuminance, and a transistor with small amount of ? can be driven in a linear range with high illuminance, so that applicable illuminance range of the photoelectric conversion device can be widened.
    Type: Application
    Filed: February 3, 2012
    Publication date: May 31, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hideaki Shishido, Atsushi Hirose
  • Patent number: 8173476
    Abstract: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: May 8, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takanori Watanabe, Tetsuya Itano, Mahito Shinohara
  • Publication number: 20120104465
    Abstract: An image sensor including: a substrate that includes a first surface onto which light is irradiated, a second surface opposite to the first surface, and a light receiving device disposed adjacent to the second surface; a transistor that includes a source region, a drain region, and a gate electrode disposed between the source region and the drain region, wherein the transistor is disposed on the second surface of the substrate; a wiring line that is disposed on the second surface of the substrate; and a plurality of contact plugs that are disposed on the source region, the drain region, or the gate electrode, wherein at least one of the plurality of contact plugs is connected to the wiring line.
    Type: Application
    Filed: September 23, 2011
    Publication date: May 3, 2012
    Inventors: Jin-ho Kim, Chang-rok Moon
  • Publication number: 20120081683
    Abstract: A detector including a layer of scintillation material, a layer of spacer material on the scintillation material, and a spectral purity filter layer on the spacer material.
    Type: Application
    Filed: March 23, 2010
    Publication date: April 5, 2012
    Applicant: ASML Netherlands B.V.
    Inventors: Ivan Sergejevitsj Nikolaev, Martijn Wehrens
  • Publication number: 20120068230
    Abstract: An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode.
    Type: Application
    Filed: August 24, 2011
    Publication date: March 22, 2012
    Applicant: CROSSTEK CAPITAL, LLC
    Inventors: Myoung-Shik Kim, Hyung-Jun Kim