Further Characterized By Doping Material (epo) Patents (Class 257/E29.098)
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Patent number: 8969865Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.Type: GrantFiled: July 31, 2006Date of Patent: March 3, 2015Assignee: Hewlett-Packard Development Company, L.P.Inventors: Gregory Herman, David Punsalan, Randy Hoffman, Jeremy Anderson, Douglas Keszler, David Blessing
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Patent number: 8778731Abstract: A method of manufacturing silver (Ag)-doped zinc oxide (ZnO) nanowires and a method of manufacturing an energy conversion device are provided. In the method of manufacturing Ag-doped ZnO nanowires, the Ag-doped nanowires are grown by a low temperature hydrothermal synthesis method using a Ag-containing aqueous solution.Type: GrantFiled: November 2, 2012Date of Patent: July 15, 2014Assignees: Samsung Electronics Co., Ltd., Industry-University Cooperation Foundation Hanyang UniversityInventors: Hyun-jin Kim, Young-jun Park, Sang-hyo Lee, Jin-pyo Hong, Jun-seok Lee
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Publication number: 20130112969Abstract: A method of manufacturing silver (Ag)-doped zinc oxide (ZnO) nanowires and a method of manufacturing an energy conversion device are provided. In the method of manufacturing Ag-doped ZnO nanowires, the Ag-doped nanowires are grown by a low temperature hydrothermal synthesis method using a Ag-containing aqueous solution.Type: ApplicationFiled: November 2, 2012Publication date: May 9, 2013Applicants: Industry-University Cooperation Foundation Hanyang University, SAMSUNG ELECTRONICS CO., LTD.Inventors: Samsung Electronics Co., Ltd., Industry-University Cooperation Foundation Hany
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Publication number: 20120181531Abstract: A semiconductor element includes a semiconductor layer mainly composed of MgxZn1-xO (0<=x<1), in which manganese contained in the semiconductor layer as impurities has a density of not more than 1×1016 cm?3.Type: ApplicationFiled: August 7, 2008Publication date: July 19, 2012Applicant: ROHM CO., LTDInventors: Ken Nakahara, Shunsuke Akasaka, Masashi Kawasaki, Akira Ohtomo, Atsushi Tsukazaki
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Publication number: 20120104383Abstract: A semiconductor device includes a ZnO thin film. The semiconductor device comprises a substrate and a ZnO thin film. The ZnO thin film includes at least two zones with different carrier types. The current invention also discloses a manufacturing method of a semiconductor device having ZnO thin film. A ZnO thin film doped with dopant is deposited on a substrate. Thereafter, a laser irradiates on the ZnO thin film to activate the dopant in the irradiated zone of the ZnO thin film to change the carrier type.Type: ApplicationFiled: June 27, 2011Publication date: May 3, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Li Wen LAI, Chun Hao Chang, Kun Wei Lin, Chun Ting Chen
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Publication number: 20120056176Abstract: An object is to provide a deposition technique for depositing an oxide semiconductor film. Another object is to provide a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that are impurities in a sputtering target used for deposition is used, whereby an oxide semiconductor film containing a small amount of those impurities can be deposited.Type: ApplicationFiled: August 30, 2011Publication date: March 8, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventor: Shunpei Yamazaki
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Publication number: 20100320456Abstract: The present invention is directed to methods for depositing doped and/or alloyed semiconductor layers, an apparatus suitable for the depositing, and products prepared therefrom.Type: ApplicationFiled: June 19, 2009Publication date: December 23, 2010Applicant: EPV Solar, Inc.Inventors: Alan E. DELAHOY, Gaurav SARAF, Sheyu GUO
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Publication number: 20100181563Abstract: A thin film transistor using an oxide semiconductor as an active layer, and its method of manufacture. The thin film transistor includes: a substrate; an active layer formed of an oxide semiconductor; a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the oxide semiconductor; a gate electrode formed on the gate insulating layer; an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer; and source and drain electrodes connected to the active layer through the contact holes. Since the source and drain electrodes are not overlapped with the gate electrode, parasitic capacitance between the source and drain electrodes and the gate electrode is minimized. Since the gate insulating layer is formed of dielectric having a high etching selectivity with respect to oxide semiconductor, the active layer is not deteriorated.Type: ApplicationFiled: January 20, 2010Publication date: July 22, 2010Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.Inventors: Min-Kyu KIM, Jin-Seong PARK, Tae-Kyung AHN, Hyun-Joong CHUNG
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Publication number: 20100051942Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.Type: ApplicationFiled: November 10, 2009Publication date: March 4, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myung-kwan RYU, Jun-seong KIM, Sang-yoon LEE, Euk-che HWANG, Tae-sang KIM, Jang-yeon KWON, Kyung-bae PARK, Kyung-seok SON, Ji-sim JUNG
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Patent number: 7666764Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.Type: GrantFiled: July 20, 2006Date of Patent: February 23, 2010Assignee: Industrial Technology Research InstituteInventors: Jia-Chong Ho, Jen-Hao Lee, Cheng-Chung Lee, Yu-Wu Wang, Chun-Tao Lee, Pzng Lin
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Patent number: 7557385Abstract: The present invention relates to semiconductor electronic devices including molybdenum oxide formed on substrates which consist of materials which are used in known semiconductor electronic devices. The present invention relates to also a new method to fabricate said electronic devices on substrates made of materials which have been used in usual electronic and photonic devices. Suitable substrates consist of materials such as element semiconductors such as silicon and germanium, III-V compound semiconductors such as gallium arsenide and gallium phosphide, II-IV compound semiconductors such as zinc oxide, IV compound semiconductors, organic semiconductors, metal crystals and their derivatives or glasses.Type: GrantFiled: January 12, 2006Date of Patent: July 7, 2009Inventor: Takashi Katoda
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Publication number: 20080283831Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.Type: ApplicationFiled: December 19, 2007Publication date: November 20, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myung-kwan RYU, Jun-seong KIM, Sang-yoon LEE, Euk-che HWANG, Tae-sang KIM, Jang-yeon KWON, Kyung-bae PARK, Kyung-seok SON, Ji-sim JUNG
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Publication number: 20070296060Abstract: A substrate 103 is set in a film-forming apparatus, such as a metal organic vapor phase epitaxy system 101, and a GaN buffer film 105, an undoped GaN film 107, and a GaN film 109 containing a p-type dopant are successively grown on the substrate 103 to form an epitaxial substrate E1. The semiconductor film 109 also contains hydrogen, which was included in a source gas, in addition to the p-type dopant. Then the epitaxial substrate E1 is placed in a short pulsed laser beam emitter 111. A laser beam LB1 is applied to a part or the whole of a surface of the epitaxial substrate E1 to activate the p-type dopant by making use of a multiphoton absorption process. When the substrate is irradiated with the pulsed laser beam LB1 which can induce multiphoton absorption, a p-type GaN film 109a is formed. There is thus provided a method of optically activating the p-type dopant in the semiconductor film to form the p-type semiconductor region, without use of thermal annealing.Type: ApplicationFiled: August 2, 2005Publication date: December 27, 2007Inventors: Keiichiro Tanabe, Susumu Yoshimoto