Abstract: Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 ?m Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.

Abstract: Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 ?m Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.

Abstract: A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Abstract: A method for processing a thin-film absorber material with enhanced photovoltaic efficiency includes forming a barrier layer on a soda lime glass substrate followed by formation of a stack structure of precursor layers. The method further includes subjecting the soda-lime glass substrate with the stack structure to a thermal treatment process with at least H2Se gas species at a temperature above 400° C. to cause formation of an absorber material. By positioning the substrates close together, during the process sodium from an adjoining substrate in the furnace also is incorporated into the absorber layer.

Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.

Abstract: A method of making a photovoltaic device includes forming a compound semiconductor layer including copper, indium, gallium, selenium and sulfur by reactive sputtering at least one target including copper, indium, gallium and a sulfur compound in an atmosphere including selenium.

Abstract: A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.

Abstract: A solar cell is provided as one capable of increasing the open voltage when compared with the conventional solar cells. A solar cell according to the present invention has a p-type semiconductor layer containing a group Ib element, a group IIIb element, and a group VIb element, and an n-type semiconductor layer containing a group Ib element, a group IIIb element, a group VIb element, and Zn and formed on the p-type semiconductor layer. A content of the group Ib element in the n-type semiconductor layer is from 15 to 21 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer, and a content of Zn in the n-type semiconductor layer is from 0.005 to 1.0 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer.

Abstract: The invention relates a photodiode device and a photodiode array using the same capable of detecting short and long wavelengths of visible light at a high efficiency. The photodiode device includes: a first conductivity type semiconductor substrate; a second conductivity type buried layer, an intrinsic semiconductor layer and a first conductivity type semiconductor layer formed on the semiconductor substrate in their order; and a second conductivity type well layer formed on the first conductivity type semiconductor layer. The second conductivity type buried layer, the intrinsic semiconductor layer and the first conductivity type semiconductor layer form a pin junction diode for detecting the long wavelength of visible light, and the first conductivity type semiconductor layer and the second conductivity type well layer form a p-n junction diode for detecting a short wavelength of light.