Characterized By Semiconductor Body Material (epo) Patents (Class 257/E31.003)

  • Patent number: 9093222
    Abstract: Provided is a dye adsorption unit including a processing tank of which the upper surface is opened, in order to perform a batch dye adsorption process for a predetermined number of substrates. The dye adsorption unit further includes, as a moving system around the processing tank, a boat capable of going in and out of the processing tank from the upper opening, a boat transport unit that serves for the boat to go in and out of the processing tank, and a top cover for detachably closing the upper opening. Further, the dye adsorption unit includes a dye solution supply unit for supplying the dye solution into the processing tank, and a flow control unit for controlling the flow of the dye solution in the processing tank during the dye adsorption processing.
    Type: Grant
    Filed: September 27, 2011
    Date of Patent: July 28, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Goro Furutani, Takashi Terada, Yoshiteru Fukuda, Norio Wada
  • Patent number: 8993371
    Abstract: The method of manufacturing a light absorbing layer for a solar cell by performing thermal treatment on a specimen configured to include thin films of one or more of copper, indium, and gallium on a substrate and element selenium, includes steps of: (a) heating a wall of a chamber up to a predefined thin film formation temperature in order to maintain a selenium vapor pressure; (b) mounting the specimen and the element selenium on the susceptor at the room temperature and loading the susceptor in the chamber; and (c) heating the specimen in the lower portion of the susceptor and, at the same time, heating the element selenium in the upper portion of the susceptor, wherein, in the step (c), in order for liquefied selenium not to be condensed on the specimen which is loaded at the room temperature and is not yet heated, the temperature of the element selenium and the specimen loaded in the chamber are individually controlled, so that the selenium vapor pressure of an inner space of the chamber does not exceed a
    Type: Grant
    Filed: August 4, 2011
    Date of Patent: March 31, 2015
    Assignee: Semics Inc.
    Inventor: Seong Hoon Song
  • Patent number: 8969850
    Abstract: An electro-magnetic radiation detector is described. The electro-magnetic radiation detector includes a detector material and a voltage biasing element. The detector material includes a substantially regular array of nano-particles embedded in a matrix material. The voltage biasing element is configured to apply a bias voltage to the matrix material such that electrical current is directly generated based on a cooperative plasmon effect in the detector material when electro-magnetic radiation in a predetermined wavelength range is incident upon the detector material, where the dominant mechanism for decay in the cooperative plasmon effect is non-radiative.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: March 3, 2015
    Assignee: Rockwell Collins, Inc.
    Inventors: Robert G. Brown, James H. Stanley
  • Patent number: 8895965
    Abstract: Provided is a photoelectric conversion element including a photoconductor containing a complex of a conductive polymer and/or polymer semiconductor and a protein containing at least one dye having a long-lived excited state.
    Type: Grant
    Filed: February 22, 2012
    Date of Patent: November 25, 2014
    Assignee: Sony Corporation
    Inventors: Wei Luo, Yuichi Tokita, Yoshio Goto, Seiji Yamada, Satoshi Nakamaru
  • Patent number: 8865513
    Abstract: Provided is a manufacturing method of a semiconductor quantum dot-sensitized solar cell. More particularly, the manufacturing method according to the present invention includes: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate and then performing heat-treatment on the substrate including the semiconductor layer formed thereon to remove indium (In) therefrom, thereby forming an n-type semiconductor quantum dot, which is a group 4 element quantum dot doped with phosphorus (P).
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: October 21, 2014
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Kyung Joong Kim, Seung Hui Hong, Jae Hee Park, Woo Lee
  • Patent number: 8859321
    Abstract: Fabrication of a tandem photovoltaic device includes forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. A top cell is formed relative to the bottom cell. The top cell has an N-type layer, a P-type layer and a top intrinsic layer therebetween. The top intrinsic layer is formed of an undoped material deposited at a temperature that is different from the bottom intrinsic layer such that band gap energies for the top intrinsic layer and the bottom intrinsic layer are progressively lower for each cell.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: October 14, 2014
    Assignee: International Business Machines Corporation
    Inventors: Ahmed Abou-Kandil, Keith E. Fogel, Augustin J. Hong, Jeehwan Kim, Devendra K. Sadana
  • Patent number: 8728861
    Abstract: A method is provided for fabricating a thin film transistor. A plurality of layers is deposited on a substrate. The plurality of layers includes a conductive gate contact layer, a gate insulator layer, an undoped channel layer, an etch-stop layer, and a conductive contact layer. The etch-stop layer is positioned between the conductive contact layer and the undoped channel layer. A portion of the conductive contact layer is selectively removed while removal of a portion of the undoped channel layer is prevented by the etch-stop layer during the selective removal. A portion of the etch-stop layer is selectively removed and an exposed portion of the etch-stop layer is converted from a conductor to an insulator by oxidizing the exposed portion of the etch-stop layer in air. A portion of remaining layers of the plurality of layers is selectively removed to form the thin film transistor.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: May 20, 2014
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Burhan Bayraktaroglu, Kevin Leedy
  • Patent number: 8664034
    Abstract: A method for manufacturing a solar cell (100) includes the steps of: a step of cleaning an exposed region (R2) on a rear surface of an n-type crystalline silicon substrate (10n), wherein the step is carried out subsequent to a step of patterning an i-type amorphous semiconductor layer (11i) and a p-type amorphous semiconductor layer (11p) and prior to a step of forming an i-type amorphous semiconductor layer (12i).
    Type: Grant
    Filed: February 26, 2010
    Date of Patent: March 4, 2014
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Tsuyoshi Takahama, Masayoshi Ono, Hiroyuki Mori, Youhei Murakami
  • Patent number: 8659107
    Abstract: A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: February 25, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Rainer Butendeich, Reiner Windisch
  • Patent number: 8624222
    Abstract: An electrical device comprising (A) a substrate having a surface and (B) a nanohole superlattice superimposed on a portion of the surface is provided. The nanohole superlattice comprises a plurality of sheets having an array of holes defined therein. The array of holes is characterized by a band gap or band gap range. The plurality of sheets forms a first edge and a second edge. A first lead comprising a first electrically conductive material forms a first junction with the first edge. A second lead comprising a second electrically conductive material forms a second junction with the second edge. The first junction is a Schottky barrier with respect to a carrier. In some instances a metal protective coating covers all or a portion of a surface of the first lead. In some instances, the first lead comprises titanium, the second lead comprises palladium, and the metal protective coating comprises gold.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: January 7, 2014
    Assignee: University of Utah Research Foundation
    Inventors: Feng Liu, Ye Zhang, Rujie Sun
  • Patent number: 8598568
    Abstract: Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: December 3, 2013
    Assignee: Industry-University Cooperation Foundation, Hanyang University
    Inventors: Tae-Whan Kim, Jae-Hun Jung, Dong-Ick Son, Jung-Min Lee, Hee-Yeon Yang, Won-Il Park
  • Patent number: 8592804
    Abstract: An organic optoelectronic device and a method for manufacturing the same are disclosed. In one aspect, the device has a stack of layers. The stack includes a buffer layer and a first organic semiconductor layer adjacent to the buffer layer at a first side of the buffer layer. The buffer layer includes at least one transition metal oxide doped with a metal.
    Type: Grant
    Filed: May 27, 2010
    Date of Patent: November 26, 2013
    Assignee: IMEC
    Inventors: Barry Rand, David Cheyns, Benjamin Kam
  • Patent number: 8563855
    Abstract: A photovoltaic element (110) for converting electromagnetic radiation into electrical energy is provided, which has a tandem cell structure.
    Type: Grant
    Filed: July 22, 2008
    Date of Patent: October 22, 2013
    Assignee: BASF SE
    Inventors: Neil Gregory Pschirer, Felix Eickemeyer, Jan Schoeneboom, Jae Hyung Hwang, Martin Karlsson, Ingmar Bruder
  • Patent number: 8530995
    Abstract: A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and second barrier and an emitter disposed between the first and second barriers so as to form a heterojunction at each interface between the emitter and the first and second barriers, respectively. The emitter may be of a first semiconductor material having a split-off response to optical signals, while one of the first or the second barriers may include a double barrier having a light-hole energy band level that is aligned with the split-off band energy level of the emitter. In addition, the remaining barrier may be graded.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: September 10, 2013
    Assignee: Georgia State University Research Foundation, Inc.
    Inventors: A.G. Unil Perera, Steven G. Matsik
  • Patent number: 8530947
    Abstract: A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: September 10, 2013
    Assignees: Shimadzu Corporation, Tohoku University
    Inventors: Yasushi Kondo, Hideki Tominaga, Kenji Takubo, Ryuta Hirose, Shigetoshi Sugawa, Hideki Mutoh
  • Publication number: 20130228215
    Abstract: A method of manufacturing a solar cell according to an embodiment includes the steps of: forming an emitter layer by ion-implanting a first conductive type dopant to a first surface of a semiconductor substrate; and forming a back surface field layer by ion-implanting a second conductive type dopant to a second surface of the semiconductor substrate. When an additional dopant is a dopant other than the first and second conductive type dopants, an amount of the additional dopant doped during the forming the back surface field layer is larger than an amount of the additional dopant doped during the forming the emitter layer.
    Type: Application
    Filed: October 9, 2012
    Publication date: September 5, 2013
    Inventors: Jungmin Ha, Youngho Choe, Philwon Yoon
  • Publication number: 20130221373
    Abstract: A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
    Type: Application
    Filed: February 28, 2012
    Publication date: August 29, 2013
    Applicants: BAY ZU PRECISION CO. LTD., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Tze-Chiang Chen, Augustin J. Hong, Chien-Chih Huang, Yu-Wei Huang, Jeehwan Kim, Devendra K. Sadana, Chih-Fu Tseng
  • Patent number: 8518735
    Abstract: The present invention relates in a first aspect to methods for producing a nanofibres-containing layer for use as an active layer in an organic electronic device. The method comprising the steps of: a) first heating up a nanofibre-forming polymer in a solvent at a temperature T1, then b) cooling said solution down to a temperature T2 at a rate less than 40° C./h thereby forming a dispersion comprising crystalline nanofibres of said nanofibre-forming polymer, then c) raising the temperature of said dispersion to a temperature T3 higher than T2, but lower than said temperature T1, and then d) coating said dispersion on a substrate at said temperature T3 thereby forming a layer for use as an element of said organic electronic device, wherein before step (d), a step of adding an electron acceptor to the solution or dispersion is performed.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: August 27, 2013
    Assignees: IMEC, Universiteit Hasselt
    Inventors: Laurence Lutsen, Wibren Oosterbaan, Sabine Bertho, Dirk Vanderzande
  • Patent number: 8501524
    Abstract: Disclosed is a method of manufacturing a thin-film light-absorbing layer using spraying, including mixing precursor solutions comprising CuCl2, InCl3 and SeC(NH2)2 under a nitrogen atmosphere at room temperature thus preparing a mixture solution; spraying the mixture solution on a substrate and drying it, thus forming a thin film; and selenizing the thin film under a selenium atmosphere. A method of manufacturing a thin-film solar cell is also provided, which includes forming a back contact layer on a glass substrate using sputtering; forming a light-absorbing layer on the back contact layer using spraying; forming a buffer layer on the light-absorbing layer using chemical vapor deposition; forming a window layer on the buffer layer using sputtering; and forming an upper electrode layer on the window layer.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: August 6, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jung-Min Cho, Eun-Jin Bae, Chang-Woo Ham, Jeong-Dae Suh, Myung-Ae Chung, Ki-Bong Song
  • Patent number: 8492193
    Abstract: There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved. Silicon substrate contains solid-soluted carbon having a concentration of 1×1016-1×1017 atoms/cm3 and solid-soluted oxygen having a concentration of 1.4×1018-1.6×1018 atoms/cm3.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: July 23, 2013
    Assignee: Sumco Corporation
    Inventor: Kazunari Kurita
  • Patent number: 8476616
    Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: July 2, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
  • Patent number: 8476739
    Abstract: A graphene-on-oxide substrate according to the present invention includes: a substrate having a metal oxide layer formed on its surface; and, formed on the metal oxide layer, a graphene layer including at least one atomic layer of the graphene. The graphene layer is grown generally parallel to the surface of the metal oxide layer, and the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.34 nm or less. Preferably, the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.
    Type: Grant
    Filed: November 24, 2009
    Date of Patent: July 2, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Makoto Okai, Motoyuki Hirooka, Takashi Kyotani, Hironori Orikasa
  • Patent number: 8466001
    Abstract: Methods of forming copper indium gallium diselenide (CIGS) layers for photovoltaic devices are disclosed. In one aspect, a solution based selenization method in the formation of CIGS is provided. In some embodiments a substrate containing elemental copper (Cu), indium (In) and gallium (Ga) is coated with a solution comprising a source of selenium (Se) dissolved in a solvent. After coating with the selenium based solution, the substrate is heated to form the CIGS layer. Coating of the substrate with the selenium based solution may be carried out by dip coating, slit casting, gap coating, ink-jet type coating, among other techniques. The solution based selenization method disclosed herein provides high material utilization and low cost, unlike vacuum based processes.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: June 18, 2013
    Assignee: Intermolecular, Inc.
    Inventor: Wei Liu
  • Publication number: 20130122641
    Abstract: A solar cell having buried contacts is provided. Curved trenches are formed on a surface of a Si substrate to form the buried contacts. The curved trenches have deep depths with wafer break prevented. The buried contacts have good efficiency on collecting electrons obtained from conversion by the longer wavelength light. The present invention is fit for mass production with a high yield, a simple fabrication procedure, a low cost and a good performance.
    Type: Application
    Filed: January 18, 2012
    Publication date: May 16, 2013
    Applicants: NATIONAL TSING HUA UNIVERSITY, JIANGSU AIDE SOLAR ENERGY TECHNOLOGY CO.,LTD
    Inventors: Fang-Chi Hsieh, Li-Karn Wang
  • Patent number: 8441087
    Abstract: According to one embodiment, an image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: May 14, 2013
    Assignee: Raytheon Company
    Inventor: Edward Peter Gordon Smith
  • Patent number: 8410474
    Abstract: A substrate having a graphene film grown thereon according to the present invention includes: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having an average composition of Al2?xO3+x (where x is 0 or more); and a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film having an electrical conductivity of 1×104 S/cm or more measured by a four-probe resistive method using an inter-voltage-probe distance of 0.2 mm.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: April 2, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Makoto Okai, Motoyuki Hirooka, Yasuo Wada
  • Publication number: 20130025655
    Abstract: A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.
    Type: Application
    Filed: July 29, 2011
    Publication date: January 31, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: STEPHEN W. BEDELL, Keith E. Fogel, Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
  • Patent number: 8362494
    Abstract: An electro-optic device is disclosed. The electro-optic device includes an insulating layer, a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type, a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region. The electro-optic active region includes a first partial active region and a second partial active region and an insulating structure in between. The insulating structure extends perpendicular to the surface of the insulating layer such that there is no overlap of the first partial active region and the second partial active region in the direction perpendicular to the surface of the insulating layer. A method for manufacturing is also disclosed.
    Type: Grant
    Filed: August 8, 2007
    Date of Patent: January 29, 2013
    Assignee: Agency for Science, Technology and Research
    Inventors: Guo-Qiang Patrick Lo, Kee-Soon Darryl Wang, Wei-Yip Loh, Mingbin Yu, Junfeng Song
  • Publication number: 20130020666
    Abstract: According to one embodiment, an image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.
    Type: Application
    Filed: July 22, 2011
    Publication date: January 24, 2013
    Applicant: Raytheon Company
    Inventor: Edward Peter Gordon Smith
  • Patent number: 8349643
    Abstract: A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 1020 cm?3; and a second section which is located on the p-type amorphous silicon layer side, and which has an oxygen concentration equal to or above 1020 cm?3.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: January 8, 2013
    Assignee: Sanyo Electric Co., Ltd.
    Inventor: Akira Terakawa
  • Publication number: 20120319244
    Abstract: A method for manufacturing a semiconductor layer according to an embodiment of the present invention comprises preparing a first compound, preparing a second compound, making a semiconductor layer forming solution, and forming a semiconductor layer including a group compound by using this semiconductor layer forming solution. The first compound contains a first chalcogen-element-containing organic compound, a first Lewis base, a I-B group element, and a first III-B group element. The second compound contains an organic ligand and a second III-B group element. The semiconductor layer forming solution contains the first compound, the second compound, and an organic solvent.
    Type: Application
    Filed: January 25, 2011
    Publication date: December 20, 2012
    Applicant: KYOCERA CORPORATION
    Inventors: Seiji Oguri, Keizo Takeda, Koichiro Yamada, Kotaro Tanigawa, Isamu Tanaka, Riichi Sasamori, Hiromitsu Ogawa
  • Publication number: 20120312992
    Abstract: A microbolometer is disclosed, including a bottom multilayered dielectric, having a first silicon oxynitride layer and a second silicon oxynitride layer disposed above the first silicon oxynitride layer, the first and second silicon oxynitride layers having different refractive indices. The microbolometer further includes a detector layer disposed above the bottom multilayered dielectric, the detector layer comprised of a temperature sensitive resistive material, and a top dielectric disposed above the detector layer.
    Type: Application
    Filed: June 10, 2011
    Publication date: December 13, 2012
    Applicant: FLIR SYSTEMS, INC.
    Inventors: Robert F. Cannata, Yaroslava Petraitis, Patrick Franklin, Robert Simes, Richard E. Bornfreund
  • Publication number: 20120313080
    Abstract: A photocapacitor device is provided for responding to a photon having at least a specified energy. The photocapacitive device includes a first portion composed of a photocapacitive material; a second portion composed of a non-photocapacitive material; and a depletion region disposed between the first and second portions. The ph otocapacitive and non-photocapacitive materials respectively have first and second Fermi-energy differences, with the second Fermi-energy difference being higher than the first Fermi-energy difference.
    Type: Application
    Filed: February 25, 2011
    Publication date: December 13, 2012
    Applicant: United States Government, as represented by the Secretary of the Navy
    Inventors: Kevin A. Boulais, Donald W. Rule, Karen J. Long, Francisco Santiago, Alfredo N. Rayms-Keller, Victor H. Gehman, JR.
  • Publication number: 20120305049
    Abstract: A solar cell of a module type in which thin-film solar cells having a light absorbing layer made of a compound semiconductor are joined in series on a single substrate. The substrate includes a base made of a ferritic stainless steel, an aluminum layer formed on at least one surface of the base, and an insulation layer having a porous structure obtained by anodizing a surface of the aluminum layer. The insulation layer exhibits compressive stress at room temperature.
    Type: Application
    Filed: January 18, 2011
    Publication date: December 6, 2012
    Applicant: FUJIFILM CORPORATION
    Inventors: Shigenori Yuya, Keigo Sato, Ryuichi Nakayama, Ryozo Kaito, Naoki Murakami
  • Publication number: 20120305064
    Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a window layer and an absorber layer disposed on the window layer, wherein the absorber layer includes a first region and a second region, the first region disposed adjacent to the window layer. The absorber layer further includes a first additive and a second additive, wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region. Method of making a photovoltaic device is also provided.
    Type: Application
    Filed: June 1, 2011
    Publication date: December 6, 2012
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: James Neil Johnson, Bastiaan Arie Korevaar, Timothy John Sommerer
  • Publication number: 20120267602
    Abstract: Provided is a method for controlling a device using a doped carbon-nanostructure, and a device including the doped carbon-nanostructure, in which the method for controlling the device selectively controls the mobility of electrons or holes using N-type or P-type doped carbon-nanostructure; the N-type or P-type impurities-doped carbon-nanostructure can selectively control the transport of electrons or holes according to a doped material; and also since the doped carbon-nanostructure limits the transport of charge that is the opposite charge to the transport facilitating charge, it can improve the efficiency of device by adding to a functional layer of device or using as a separate layer in the electrons or holes-only transporting device.
    Type: Application
    Filed: November 16, 2011
    Publication date: October 25, 2012
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sang Ouk Kim, Ji Sun Park, Ju Min Lee, Myoung Hoon Song
  • Publication number: 20120241717
    Abstract: A photosensitive optoelectronic device (1) comprises a plurality of organic semiconductor sub-cells (10, 11, 12, 13) arranged in a stack between electrodes (3, 5), each sub-cell comprising donor material (14, 16, 23, 25) and acceptor material (15, 17, 24, 26) providing a heterojunction. There is a recombination layer (19, 22, 28) between adjacent sub-cells. The sub-cells are arranged in two groups (20, 29). The sub-cells (10, 11; 12, 13) within a group (20; 29) are responsive over substantially the same part of the light spectrum. The groups (20, 29) differ substantially from each other in respect of the parts of the light spectrum over which their respective sub-cells are responsive.
    Type: Application
    Filed: September 3, 2010
    Publication date: September 27, 2012
    Applicant: UNIVERSITY OF WARWICK
    Inventors: Timothy Jones, Ross Hatton
  • Publication number: 20120228587
    Abstract: Provided is a photoelectric conversion element including a photoconductor containing a complex of a conductive polymer and/or polymer semiconductor and a protein containing at least one dye having a long-lived excited state.
    Type: Application
    Filed: February 22, 2012
    Publication date: September 13, 2012
    Applicant: SONY CORPORATION
    Inventors: Wei Luo, Yuichi Tokita, Yoshio Goto, Seiji Yamada, Satoshi Nakamaru
  • Publication number: 20120231574
    Abstract: An electroplating production line or apparatus that can be assembled with modular plating sections in a roll-to-roll or reel-to-reel continuous plating process is provided. The length of the plating cell for a modular plating section can be readily changed to fit different current densities required in a roll-to-roll or reel-to-reel process. In addition, the electrolyte solution tanks can be simply connected or disconnected from the modular plating sections and moved around. With these designs, a multiple layers of coating with different metals, semiconductors or their alloys can be electrodeposited on this production line or apparatus with a flexibility to easily change the plating orders of different materials. This apparatus is particularly useful in manufacturing Group IB-IIIA-VIA and Group IIB-VIA thin film solar cells such as CIGS and CdTe solar cells on flexible conductive substrates through a continuous roll-to-roll or reel-to-reel process.
    Type: Application
    Filed: March 12, 2011
    Publication date: September 13, 2012
    Inventor: Jiaxiong Wang
  • Patent number: 8263494
    Abstract: A method for patterning a thin film photovoltaic panel on a substrate characterized by a compaction parameter. The method includes forming molybdenum material overlying the substrate and forming a first plurality of patterns in the molybdenum material to configure a first patterned structure having a first inter-pattern spacing. Additionally, the method includes forming a precursor material comprising at least copper bearing species and indium bearing species overlying the first patterned structure. Then the substrate including the precursor material is subjected to a thermal processes to form at least an absorber structure.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: September 11, 2012
    Assignee: Stion Corporation
    Inventor: Frank Patterson
  • Patent number: 8247688
    Abstract: In various embodiments, fiber photovoltaic devices are described in the present disclosure. The fiber photovoltaic devices include an optical filament, a first electrode coating the optical filament, a continuous semiconductive layer deposited above the first electrode layer, and a second electrode layer deposited above the continuous semiconductive layer. The first electrode layer is at least partially transparent to electromagnetic radiation. The continuous semiconductive layer is in electrical contact with the first electrode layer. The continuous semiconductive layer absorbs electromagnetic radiation and turns the electromagnetic radiation into an electrical signal. The continuous semiconductive layer includes at least two semiconductive materials that are substantially unmixed and are located in separate regions along the longitudinal axis of the fiber photovoltaic device. The second electrode layer is in electrical contact with the continuous semiconductive layer.
    Type: Grant
    Filed: May 27, 2009
    Date of Patent: August 21, 2012
    Assignee: University of Houston
    Inventor: Seamus Curran
  • Publication number: 20120204926
    Abstract: Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.
    Type: Application
    Filed: February 15, 2011
    Publication date: August 16, 2012
    Inventors: Gabriel HARLEY, David D. SMITH, Tim DENNIS, Ann WALDHAUER, Taeseok KIM, Peter John COUSINS
  • Publication number: 20120199812
    Abstract: Silicon, silicon-germanium alloy, and germanium nanowire optoelectronic devices and methods for fabricating the same are provided. According to one embodiment, a P-I-N device is provided that includes a parallel array of intrinsic silicon, silicon-germanium or germanium nanowires located between a p+ contact and an n+ contact. In certain embodiments, the intrinsic silicon and germanium nanowires can be fabricated with diameters of less than 4.9 nm and 19 nm, respectively. In a further embodiment, vertically stacked silicon, silicon-germanium and germanium nanowires can be formed.
    Type: Application
    Filed: October 6, 2010
    Publication date: August 9, 2012
    Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED
    Inventors: Mehmet Onur Baykan, Toshikazu Nishida, Scott Emmet Thompson
  • Publication number: 20120192948
    Abstract: A method of forming an ohmic contact and electron reflector on a surface of a CdTe containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Cd-deficient, Te-rich surface region at a surface of the CdTe containing compound film; exposing the Cd-deficient surface region to an electron reflector forming material; forming the electron reflector; and laying down a contact layer over the electron reflector layer. The solar cell so produced has a Cd-deficient region which is converted to an electron reflector layer on the surface of a CdTe absorber layer, and an ohmic contact. A Cd/Te molar ratio within the Cd-deficient region decreases from 1 at an interface with the CdTe absorber layer to a value less than 1 towards the ohmic contact.
    Type: Application
    Filed: March 20, 2012
    Publication date: August 2, 2012
    Applicant: Encoresolar, Inc.
    Inventor: Bulent M. Basol
  • Publication number: 20120192913
    Abstract: Fabrication of a tandem photovoltaic device includes forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. A top cell is formed relative to the bottom cell. The top cell has an N-type layer, a P-type layer and a top intrinsic layer therebetween. The top intrinsic layer is formed of an undoped material deposited at a temperature that is different from the bottom intrinsic layer such that band gap energies for the top intrinsic layer and the bottom intrinsic layer are progressively lower for each cell.
    Type: Application
    Filed: January 31, 2011
    Publication date: August 2, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: AHMED ABOU-KANDIL, KEITH E. FOGEL, AUGUSTIN J. HONG, JEEHWAN KIM, DEVENDRA K. SADANA
  • Publication number: 20120161106
    Abstract: Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.
    Type: Application
    Filed: August 24, 2010
    Publication date: June 28, 2012
    Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY
    Inventors: Tae-Whan Kim, Jae-Hun Jung, Dong-Ick Son, Jung-Min Lee, Hee-Yeon Yang, Won-Il Park
  • Publication number: 20120164785
    Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.
    Type: Application
    Filed: December 22, 2010
    Publication date: June 28, 2012
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Holly Ann Blaydes, George Theodore Dalakos, David William Vernooy, Allan Robert Northrup, Juan Carlos Rojo, Peter Joel Meschter, Hongying Peng, Hongbo Cao, Yangang Andrew Xi, Robert Dwayne Gossman, Anping Zhang
  • Publication number: 20120156827
    Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support and rapidly thermally annealing the substantially amorphous cadmium tin oxide layer by exposing a first surface of the substantially amorphous cadmium tin oxide layer to an electromagnetic radiation to form a transparent layer. A method of making a photovoltaic device is also provided.
    Type: Application
    Filed: December 17, 2010
    Publication date: June 21, 2012
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Joseph Darryl Michael, Bruce Edward Brackett, Kristian William Andreini, Juan Carlos Rojo, Scott Feldman-Peabody
  • Publication number: 20120138147
    Abstract: The present invention provides a photoelectric conversion element for use, for example, as a dye sensitized solar cell that has a wide range of choices of additives and moreover offers better characteristics than when 4-tert-butylpyridine is used as an additive. In the photoelectric conversion element having a structure in which an electrolyte layer (7) is filled between a porous photoelectrode (3) formed above a transparent substrate (1) and a counter electrode (6), an additive having a pKa falling within the range of 6.04?pKa?7.3 is added to the electrolyte layer (7), and/or the additive having a pKa falling within the range of 6.04?pKa?7.3 is adsorbed to the surface of at least either the porous photoelectrode (3) or counter electrode (6) facing the electrolyte layer (7). A pyridine-based additive or an additive having a heterocycle is used as an additive. When the electrolyte layer (7) includes an electrolytic solution, a solvent having a molecular weight of 47.
    Type: Application
    Filed: June 10, 2011
    Publication date: June 7, 2012
    Applicant: Sony Corporation
    Inventors: Ryohei Tsuda, Masaki Orihashi
  • Publication number: 20120138116
    Abstract: The disclosure provides for a direct wafer bonding method including providing a bonding layer upon a first and second wafer, and directly bonding the first and second wafers together under heat and pressure. The method may be used for directly bonding an GaAs-based, InP-based, GaP-based, GaSb-based, or Ga(In)N-based device to a GaAs device by introducing a highly doped (Al)(Ga)InP(As)(Sb) layer between the devices. The bonding layer material forms a bond having high bond strength, low electrical resistance, and high optical transmittance.
    Type: Application
    Filed: December 3, 2010
    Publication date: June 7, 2012
    Applicant: THE BOEING COMPANY
    Inventors: Dhananjay M. BHUSARI, Daniel C. LAW