Abstract: Provided is an image sensor IC in which a conductive material transmissive to light, which is fixed to the same potential, is formed under a protection film in a plurality of pixel regions. The conductive material transmissive to light for potential fixation is formed in each pixel, has a narrow and linear shape, and is electrically connected so as to hold the same potential as a potential of a silicon substrate. Accordingly, a potential of each of the regions which become a base at the time of forming the protective film is kept constant in an entire pixel region, thereby obtaining a uniform thickness and quality of the protective film. As a result, variation in photoelectric conversion characteristic of the pixels can be eliminated.

Abstract: An image sensing module and a method for packaging the same are disclosed. Meanwhile, the packaging method includes the steps of a) providing a substrate; b) forming plural passive devices on the substrate; c) adhering a chip on the substrate and bonding thereon; d) providing a ring frame, wherein the ring frame includes an opening window and plural pillars for contacting with the substrate; e) adhering a glass piece on the opening window to form a lid assembly; f) covering the lid assembly on the substrate, wherein the plural pillars contacting with the substrate, the plural passive devices and the chip are covered by the lid assembly, and plural gaps are formed between the ring frame and edges of the substrate; and g) filling a filler into the plural gaps to seal the plural passive devices and the chip in the lid assembly and the substrate.

Abstract: The present invention provides a transparent conductive film having: a transparent base film; a transparent SiOx thin film having a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to 3.0 nm, wherein x is from 1.0 to 2.0; and a transparent conductive thin film including an indium-tin complex oxide, which has a thickness of from 20 to 35 nm and a ratio of SnO2/(In2O3+SnO2) of from 3 to 15 wt %, wherein the transparent conductive thin film is disposed on one side of the transparent base film through the transparent SiOx thin film.

Abstract: A method for manufacturing liquid crystal display substrates comprises the steps of: (a) providing a substrate having a transparent electrode layer and a metal layer; (b) forming a patterned photoresist layer through half-tone or diffraction; (c) defining signal line area and thin film diode area, or pixel area and conductive electrode-lines by etching; and (d) forming an oxidized layer on partial surface of the metal layer. The disclosure here provides a patterning process of lithography and etching with one photolithography of one single mask in the manufacturing of liquid crystal display substrates. Furthermore, the method disclosed here can effectively increase the yield of manufacturing, and reduce the cost of manufacturing.

Abstract: An image sensor including a substrate of a semiconductor material having first and second opposite surfaces; at least one photodiode formed in the substrate on the first surface side and intended to be lit through the second surface; a stacking of insulating layers covering the first surface; and conductive regions formed at the stacking level. The sensor further includes a transparent insulating layer at least partly covering the second surface; a transparent conductive layer at least partly covering the transparent insulating layer; and circuitry for biasing the conductive layer.

Abstract: A conductive pattern, made of a transparent conductive oxide, such as ITO including electrodes (2) and conductive paths (4) is formed on one face of a transparent substrate (3) made of sapphire or toughened glass, then coated with a first layer (5) of a transparent dielectric with a low refractive index, such as MgF2 or LiF2, and then a second layer (7) of another transparent dielectric having a higher refractive index than the first, such as Al2O3, Ta2O5 or DLC.

Abstract: A thin film transistor may include an active layer formed on an insulating substrate and formed with source/drain regions and a channel region; a gate insulating film formed on the active layer; and a gate electrode formed on the gate insulating film. The gate electrode may be formed of a conductive metal film pattern and a conductive oxide film covering the conductive metal film pattern. The source/drain regions may include an LDD region, and the LDD region may at least partially overlap with the gate electrode.

Abstract: A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.