Comprising Only Group Ii-vi Compound (epo) Patents (Class 257/E33.019)
  • Patent number: 8952419
    Abstract: A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: February 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-jo Tak, Jae-won Lee, Young-soo Park, Jun-youn Kim
  • Patent number: 8883558
    Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: November 11, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Toshinari Sasaki, Hideaki Kuwabara
  • Patent number: 8772762
    Abstract: Provided is an organic electroluminescent device including: a substrate (11, 101); a first electrode (12, 102) formed on the substrate (11, 101) and including a pixel region; a partition wall (23, 203) formed on the substrate (11, 101), partitioning the first electrode (12, 102), and including a surface with a recessed and projected form; a luminescent medium layer (19, 109) formed on the pixel region and the partition wall (23, 203), a film thickness of the partition wall (23, 203) being uneven according to the recessed and projected form; and a second electrode (17, 107) formed on the luminescent medium layer (19, 109).
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: July 8, 2014
    Assignee: Toppan Printing Co., Ltd.
    Inventors: Shingo Kaneta, Yuki Yasu, Ryo Syoda, Noriko Morikawa, Eiichi Kitazume
  • Patent number: 8765611
    Abstract: A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.
    Type: Grant
    Filed: November 2, 2010
    Date of Patent: July 1, 2014
    Assignee: 3M Innovative Properties Company
    Inventors: Michael A. Haase, Terry L. Smith, Jun-Ying Zhang
  • Patent number: 8592810
    Abstract: It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: November 26, 2013
    Assignees: National University Corporation Tohoku University, Rohm Co., Ltd.
    Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi
  • Publication number: 20130306964
    Abstract: A method of fabricating a light emitting diode device comprises providing a substrate, growing an epitaxial structure on the substrate. The epitaxial structure includes a first layer on the substrate, an active layer on the first layer and a second layer on the active layer. The method further comprises depositing a conductive and reflective layer on the epitaxial structure, forming a group of first trenches and a second trench. Each of the first and second trenches extends from surface of the conductive and reflective layer to the first layer to expose part of the first layer. The method further comprises depositing conductive material to cover a portion of the conductive and reflective layer to form a first contact pad, and cover surfaces between adjacent first trenches to form a second contact pad. The second contact pad electrically connects the first layer by filling the conductive material in the first trenches.
    Type: Application
    Filed: May 17, 2012
    Publication date: November 21, 2013
    Applicant: Starlite LED Inc
    Inventor: Chang HAN
  • Patent number: 8552434
    Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.
    Type: Grant
    Filed: November 19, 2012
    Date of Patent: October 8, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Toshinari Sasaki, Hideaki Kuwabara
  • Publication number: 20130256650
    Abstract: A semiconductor device and fabrication method thereof are provided, wherein the fabrication method of the semiconductor device includes the following steps. Forming a semiconductor layer on a substrate, wherein the semiconductor layer has a top surface and a bottom surface that is opposite to the top surface. The bottom surface is in contact with the substrate, and the top surface has a plurality of pits, the pits are extended from the top surface toward the bottom surface. Preparing a solution, wherein the solution includes a plurality of nanoparticles. Filling the nanoparticles into the pits. Forming a conducting layer on the semiconductor layer after filling the nanoparticles into the pits.
    Type: Application
    Filed: May 27, 2012
    Publication date: October 3, 2013
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Chih-Chung Yang, Horng-Shyang Chen, Shao-Ying Ting, Che-Hao Liao, Chih-Yen Chen, Chieh Hsieh, Hao-Tsung Chen, Yu-Feng Yao, Dong-Ming Yeh
  • Patent number: 8546182
    Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.
    Type: Grant
    Filed: November 19, 2012
    Date of Patent: October 1, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Toshinari Sasaki, Hideaki Kuwabara
  • Patent number: 8530272
    Abstract: A method which has a step of growing a thermostable-state ZnO-based single crystal on a ZnO single crystal substrate at a growth temperature that is equal to or greater than 600° C. and less than 900° C. by using a metalorganic compound containing no oxygen and water vapor based on an MOCVD method.
    Type: Grant
    Filed: May 21, 2010
    Date of Patent: September 10, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Naochika Horio, Masayuki Makishima
  • Patent number: 8502219
    Abstract: A method which has a low-temperature growth step of growing a buffer layer of a ZnO-based single crystal on the substrate at a growth temperature in the range of 250° C. to 450° C. using a polar oxygen material and a metalorganic compound containing no oxygen; performing a heat treatment of the buffer layer to effect a transition of the buffer layer to a thermostable-state single crystal layer; and a high-temperature growth step of growing the ZnO-based single crystal layer on the thermostable-state single crystal layer at a growth temperature in the range of 600° C. to 900° C. using a polar oxygen material and a metalorganic compound containing no oxygen.
    Type: Grant
    Filed: May 21, 2010
    Date of Patent: August 6, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Naochika Horio, Masayuki Makishima
  • Publication number: 20130153856
    Abstract: An infrared LED device comprising a plurality of LED mesas; each mesa being approximately 25 to 500 microns separated by a gap of approximately 50 to 100 microns; each mesa having at least two indium contacts; a substrate; and a plurality of leads for connection to the contacts, whereby upon application of electrical power infrared light emission occurs. The method of making comprises providing a first substrate; using molecular beam epitaxy, growing a quantum well structure comprising alternating active and injection regions on the substrate; growing a thin p-type layer on the quantum well structure; etching the mesa area down to the substrate to form a plurality of mesas, forming first electrical contacts; deep etching to isolate each of the mesas; depositing first indium contacts on the mesas; providing a second substrate; depositing second electrical contacts; bonding the first and second substrates at the points of the electrical contacts.
    Type: Application
    Filed: December 15, 2011
    Publication date: June 20, 2013
    Applicant: U.S. Government as represented by the Secretary of the Amry
    Inventor: Naresh C. Das
  • Patent number: 8436349
    Abstract: In a process for fabricating a thin-film transistor in which a gate electrode 4 is to be formed on a substrate 1, the process has the steps of forming the gate electrode 4 on the substrate 1, forming a metal oxide layer 7 in such a way as to cover the gate electrode 4, forming a source electrode 6 and a drain electrode 5, and carrying out annealing in an inert gas to change part of the metal oxide layer 7 into a channel region.
    Type: Grant
    Filed: February 18, 2008
    Date of Patent: May 7, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masafumi Sano, Ryo Hayashi
  • Publication number: 20130087780
    Abstract: A group III nitride semiconductor light emitting diode is revealed. A layered structure composed of group III nitrides is formed on the substrate through epitaxy growth of a hexagonal wurtzite crystal structure. The layered structure includes a n-type semiconductor layer, a light emitting layer on the n-type semiconductor layer, and a p-type semiconductor layer on the light emitting layer. A first electrode metal pad is formed on the p-type semiconductor layer and a second electrode metal pad on the n-type semiconductor layer. A direction from the first electrode metal pad to the second electrode metal pad is the same with that of C-axis [0001] of the hexagonal wurtzite crystal structure so as to speed up the movement of electron-hole and improve the combination efficiency of electron-hole by the electric field along the direction of C-axis [0001] in the hexagonal wurtzite crystal structure.
    Type: Application
    Filed: October 7, 2011
    Publication date: April 11, 2013
    Applicant: SOUTHERN TAIWAN UNIVERSITY OF TECHNOLOGY
    Inventor: YU-ZUNG CHIOU
  • Patent number: 8399274
    Abstract: An organic light emitting display is disclosed. The display has a pixel which includes a transistor and a capacitor. The active layer of the transistor and at least one of the electrodes of the capacitor comprise a semiconductor oxide.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: March 19, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ki-Nyeng Kang, Young-Shin Pyo, Dong-Un Jin
  • Patent number: 8395141
    Abstract: Semiconductor emitting devices that offset stresses applied to a quantum well region and reduce internal fields due to spontaneous and piezoelectric polarizations are disclosed. In one embodiment, a semiconductor emitting device includes a quantum well region comprising an active layer that emits light and at least one barrier layer disposed adjacent the active layer, a means for impressing an electric field across the quantum well region to inject carriers into the quantum well region, and a means for impressing an offset electric field across the quantum well region to offset the polarization field formed in the quantum well region.
    Type: Grant
    Filed: July 6, 2009
    Date of Patent: March 12, 2013
    Assignee: University of Seoul Industry Cooperation Foundation
    Inventor: Doyeol Ahn
  • Patent number: 8389310
    Abstract: A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: March 5, 2013
    Assignee: E Ink Holdings Inc.
    Inventors: Ted-Hong Shinn, Henry Wang, Fang-An Shu, Yao-Chou Tsai
  • Publication number: 20130052763
    Abstract: A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved.
    Type: Application
    Filed: March 19, 2012
    Publication date: February 28, 2013
    Applicants: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-Young CHOI, Bo-Sung KIM, Kwang-Yeol LEE, See-Won KIM
  • Publication number: 20130037801
    Abstract: A light emitting diode (LED) chip including: a substrate; and a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, sequentially deposited on the substrate, in which when a length of the substrate is L and a width of the substrate is W, L/W>10.
    Type: Application
    Filed: October 17, 2012
    Publication date: February 14, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: SAMSUNG ELECTRONICS CO., LTD.
  • Patent number: 8357922
    Abstract: A nanodevice, a transistor including the nanodevice, a method of manufacturing the nanodevice, and a method of manufacturing the transistor including the nanodevice are provided. The nanodevice includes a substrate, a mask layer located on the substrate and having at least one opening, and a nanotube formed on the substrate through the opening along an edge of the opening. The nanotube extends through the opening in a direction substantially perpendicular to a surface of the substrate.
    Type: Grant
    Filed: February 5, 2008
    Date of Patent: January 22, 2013
    Assignee: LG Display Co., Ltd.
    Inventors: Young-Joon Hong, Gyu-Chul Yi
  • Patent number: 8344387
    Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.
    Type: Grant
    Filed: November 24, 2009
    Date of Patent: January 1, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Toshinari Sasaki, Hideaki Kuwabara
  • Patent number: 8334542
    Abstract: A light emitting diode includes a thermal conductive substrate, an p-type GaN layer, an active layer and an n-type GaN layer sequentially stacked above the substrate and an electrode pad deposited on the n-type GaN layer. A surface of n-type GaN layer away from the active layer has a first diffusing section and a second diffusing section. The first diffusing section is adjacent to the electrode pad and the second diffusing section is located at the other side of the first diffusing section opposite to the electrode pad, wherein the doping concentration of the first diffusing section is less than that of the second diffusing section. The n-type GaN layer has an electrical resistance larger than that of the first diffusing section which in turn is larger than that of the second diffusing section.
    Type: Grant
    Filed: September 17, 2010
    Date of Patent: December 18, 2012
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Chih-Chen Lai
  • Publication number: 20120305911
    Abstract: Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.
    Type: Application
    Filed: May 25, 2012
    Publication date: December 6, 2012
    Applicant: Mitsubishi Electric Corporation
    Inventors: Toshihiko IWASAKA, Kazunori INOUE, Masaru AOKI, Reiko NOGUCHI
  • Publication number: 20120228607
    Abstract: As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.
    Type: Application
    Filed: May 23, 2012
    Publication date: September 13, 2012
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu MIYAIRI, Takeshi OSADA, Shunpei YAMAZAKI
  • Publication number: 20120217496
    Abstract: In accordance with certain embodiments, an unpackaged inorganic LED die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the unpackaged inorganic LED die or non-coplanarity of the contacts thereof.
    Type: Application
    Filed: May 8, 2012
    Publication date: August 30, 2012
    Inventors: Michael Tischler, Philippe Schick, Ian Ashdown, Calvin Wade Sheen, Paul Jungwirth
  • Publication number: 20120205647
    Abstract: An organic light-emitting display device includes: a substrate having a transistor region and a thin-film transistor having a gate electrode, a source/drain electrode and an active layer sequentially formed on the transistor region, wherein a portion of the source/drain electrode is between the active layer and substrate.
    Type: Application
    Filed: December 6, 2011
    Publication date: August 16, 2012
    Inventor: Seong-Kweon Heo
  • Publication number: 20120205652
    Abstract: It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.
    Type: Application
    Filed: October 7, 2010
    Publication date: August 16, 2012
    Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi
  • Publication number: 20120193739
    Abstract: A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.
    Type: Application
    Filed: January 27, 2012
    Publication date: August 2, 2012
    Applicant: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Peter Hackenschmied, Christian Schröter, Matthias Strassburg
  • Patent number: 8232121
    Abstract: A semiconductor device that has excellent characteristics and mass productivity wherein the introduction of defects thereinto at the time of device separation is prevented, and a method for producing the semiconductor device. In particular, there is provided a high-performance semiconductor device having excellent luminous efficiency, longevity and mass productivity; and a method for producing this semiconductor device. The method for producing the semiconductor device has a step of forming, between a substrate comprising zinc oxide (ZnO) and a device operating layer, a defect-blocking layer having a crystal composition that is different from that of the substrate, and a step of forming device dividing grooves to a depth that goes beyond the defect-blocking layer, relative to the device operating layer side surface of the substrate on which the device operating layer is formed.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: July 31, 2012
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Chizu Kyotani, Naochika Horio
  • Patent number: 8212247
    Abstract: An organic light emitting display includes data lines and scan lines intersecting each other, a scan driving unit for supplying a scan signal to the scan lines, a data driving unit for supplying a data signal to the data lines, and pixels defined at intersection points of the data and scan lines, each pixel having an organic light emitting diode, a first TFT with an inverted staggered top gate structure and connected to the organic light emitting diode, the first TFT including an oxide semiconductor as an active layer, and a second TFT with an inverted staggered bottom gate structure and configured to receive the scan signal from the scan lines, the second TFT including an oxide semiconductor as an active layer.
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: July 3, 2012
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Ki-Nyeng Kang, Jae-Seob Lee, Dong-Un Jin
  • Publication number: 20120146021
    Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z) ??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.
    Type: Application
    Filed: February 23, 2012
    Publication date: June 14, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hisato Yabuta, Ayanori Endo, Nobuyuki Kaji, Ryo Hayashi
  • Publication number: 20120146020
    Abstract: Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.
    Type: Application
    Filed: February 21, 2012
    Publication date: June 14, 2012
    Applicant: Moxtronics, Inc.
    Inventors: Yungryel Ryu, Tae-seok Lee, Henry W. White
  • Patent number: 8148731
    Abstract: Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.
    Type: Grant
    Filed: August 28, 2007
    Date of Patent: April 3, 2012
    Assignee: Moxtronics, Inc.
    Inventors: Yungryel Ryu, Tae-seok Lee, Henry W. White
  • Publication number: 20120074399
    Abstract: Certain example embodiments relate to methods of making oxide thin film transistor arrays (e.g., IGZO, amorphous or polycrystalline ZnO, ZnSnO, InZnO, and/or the like), and devices incorporating the same. Blanket layers of an optional barrier layer, semiconductor, gate insulator, and/or gate metal are disposed on a substrate. These and/or other layers may be deposited on a soda lime or borosilicate substrate via low or room temperature sputtering. These layers may be later patterned and/or further processed in making a TFT array according to certain example embodiments. In certain example embodiments, all or substantially all TFT processing may take place at a low temperature, e.g., at or below 150 degrees C., until a post-annealing activation step, and the post-anneal step may take place at a relatively low temperature (e.g., 200-250 degrees C.).
    Type: Application
    Filed: September 29, 2010
    Publication date: March 29, 2012
    Applicant: Guardian Industries Corp.
    Inventor: Willem Den Boer
  • Publication number: 20120061644
    Abstract: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.
    Type: Application
    Filed: November 16, 2011
    Publication date: March 15, 2012
    Inventors: Jonthan S. Steckel, John P. Zimmer, Seth Coe-Sullivan, Nathan E. Stott, Vladimir Bulovic, Moungi G. Bawendi
  • Publication number: 20120064654
    Abstract: Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.
    Type: Application
    Filed: November 15, 2011
    Publication date: March 15, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tomoyuki Oike, Tatsuya Iwasaki, Yoshihiro Ohashi
  • Publication number: 20120052606
    Abstract: An object is to simplify a manufacturing process of a transistor, and to manufacture a light-emitting display device not only with a smaller number of photomasks compared to the number of photomasks used in the conventional method but also without an additional step. By using an intrinsic or substantially intrinsic high-resistance oxide semiconductor for a semiconductor layer included in the transistor, so that a step of processing the semiconductor layer into an island shape in each transistor can be omitted. Unnecessary portions of the semiconductor layer are etched away at the same time as a step of forming an opening in an insulating layer formed in an upper layer of the semiconductor layer, so that the number of photolithography steps is reduced.
    Type: Application
    Filed: August 24, 2011
    Publication date: March 1, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Shunpei Yamazaki
  • Patent number: 8124969
    Abstract: A ZnO-based semiconductor light emitting element includes a ZnO-based semiconductor layer formed on a rectangular sapphire A-plane substrate having a principal surface lying in the A-plane {11-20}. The substrate has a thickness of 50 to 200 ?m and is surrounded by two parallel first side edges forming an angle in a range of 52.7° to 54.7° with respect to the m-axis orthogonal to the c-axis and two parallel second side edges orthogonal to the first side edges. The light emitting element is obtained by: forming, on a surface of the sapphire A-plane substrate opposite to the surface on which the ZnO-based semiconductor layer is formed, first scribed grooves forming an angle in a range of 52.7° to 54.7° with respect to the m-axis and second scribed grooves orthogonal to the first scribed grooves; and breaking the substrate along the first scribed grooves and then along the second scribed grooves.
    Type: Grant
    Filed: April 23, 2009
    Date of Patent: February 28, 2012
    Assignee: Stanley Electric Co., Ltd.
    Inventor: Naochika Horio
  • Patent number: 8106400
    Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. The pixel portion and the driver portion are provided over the same substrate, whereby manufacturing cost can be reduced.
    Type: Grant
    Filed: October 20, 2009
    Date of Patent: January 31, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Takeshi Osada, Kengo Akimoto, Shunpei Yamazaki
  • Publication number: 20120012839
    Abstract: A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.
    Type: Application
    Filed: September 23, 2011
    Publication date: January 19, 2012
    Inventors: Jong-Uk BAE, Hyun-Sik Seo, Yong-Yub Kim
  • Patent number: 8097885
    Abstract: Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.
    Type: Grant
    Filed: May 27, 2008
    Date of Patent: January 17, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tomoyuki Oike, Tatsuya Iwasaki
  • Patent number: 8097879
    Abstract: The present invention relates to a light emitting diode (100, 109), comprising at least one p-doped structure, a plurality of n-doped zinc-oxide (ZnO) nanowires (104) arranged on the at least one p-doped structure, thereby forming a plurality of p-n junctions (107a, 107b), an insulating structure (105) arranged among the plurality of ZnO-nanowires (104), to electrically separate the plurality of p-n junctions (107a, 107b), and a transparent conductive layer (106), arranged on the at least one insulating structure (105) and in electrical contact with the plurality of ZnO-nanowires (104), to enable application of a voltage over the plurality of p-n junctions (107a, 107b), thereby enabling emission of light. An advantage with the above light emitting diode (100, 109) is its improved broadband spectral distribution. Furthermore, as ZnO-nanowires (104) are used, it is possible to achieve a high brightness.
    Type: Grant
    Filed: November 23, 2006
    Date of Patent: January 17, 2012
    Assignee: Eco Spark AB
    Inventors: Qiu-Hong Hu, Magnus Willander, Victor Kouzmine
  • Publication number: 20120007042
    Abstract: A light emitting device comprising a first semiconductor layer, a second semiconductor layer and a quantum well layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on the opposite sides of the quantum well layer, the quantum well layer comprising a plurality of quantum well rods which are separated from each other, and each of the quantum well rods has only one quantum well.
    Type: Application
    Filed: July 8, 2011
    Publication date: January 12, 2012
    Applicant: Epistar Corporation
    Inventors: Min-Hsun HSIEH, Hung-Chih YANG, Ta-Cheng HSU, Shih-Chang LEE, Sheng-Horng YEN, Yung-Hsiang LIN, Shih-Pang CHANG
  • Publication number: 20110272606
    Abstract: The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide layer on a silicon substrate. An optical waveguide is formed in the oxide layer and has an input coupled to the ZnO emitter. A detector is coupled to an output of the optical waveguide.
    Type: Application
    Filed: July 18, 2011
    Publication date: November 10, 2011
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Leonard Forbes, Kie Y. Ahn
  • Publication number: 20110248262
    Abstract: A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide semiconductor layer of a pixel area is etched by using a half-tone mask, a metal layer is formed at a contact hole of the etched gate insulting layer, and then a passivation layer formed thereon is etched. Thus, an overhang of the passivation layer can be prevented from being generated when the gate insulating layer is etched, and accordingly, the fabrication process can be simplified.
    Type: Application
    Filed: June 22, 2011
    Publication date: October 13, 2011
    Inventors: Im-Kuk Kang, Dae-Won Kim
  • Publication number: 20110240986
    Abstract: A pixel structure of an electroluminescent display panel includes a substrate, a first patterned conductive layer, an insulating layer, a second patterned conductive layer, an active layer, a first passivation layer and an electroluminescent device. The first patterned conductive layer includes a gate. The insulating layer, disposed on the substrate and the first patterned conductive layer, has at least a first contact hole partially exposing the gate. The second patterned conductive layer, disposed on the insulating layer, includes a first source, a first drain, and a second drain, where the second drain is electrically connected to the gate through the first contact hole of the insulating layer.
    Type: Application
    Filed: September 3, 2010
    Publication date: October 6, 2011
    Inventors: Tsung-Ting Tsai, Hsing-Hung Hsieh
  • Patent number: 8030195
    Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: October 4, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Nobuo Tanaka, Tokie Tanaka, legal representative
  • Publication number: 20110229998
    Abstract: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.
    Type: Application
    Filed: June 27, 2007
    Publication date: September 22, 2011
    Inventors: Jonathan S. Steckel, John P. Zimmer, Seth Coe-Sullivan, Nathan E. Stott, Vladimir Bulovic, Moungi G. Bawendi
  • Patent number: 7982215
    Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
    Type: Grant
    Filed: October 2, 2006
    Date of Patent: July 19, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Nobuo Tanaka, Tokie Tanaka, legal representative
  • Patent number: 7982228
    Abstract: Methods and systems are provided that may be used to utilize and manufacture a light sources apparatus. A first light emitting diode emits light having a first wavelength, and a second light emitting diode for emitting light having a second wavelength. Each of the first and second light emitting diodes may comprise angled facets to reflect incident light in a direct toward a top end of the first light emitting diode. The second light emitting diode comprising angled facets may reflect incident light in a direction toward a top end of the second light emitting diode. A first distributed Bragg reflector is disposed between the top end of the first light emitting diode and a bottom end of the second light emitting diode to allow light from the first light emitting diode to pass through and to reflect light from the second light emitting diode.
    Type: Grant
    Filed: October 2, 2009
    Date of Patent: July 19, 2011
    Assignee: Versitech Limited
    Inventors: Hoi Wai Choi, Kwun Nam Hui, Xianghua Wang