Abstract: A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer.

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

Abstract: Provided is an organic electroluminescent device including: a substrate (11, 101); a first electrode (12, 102) formed on the substrate (11, 101) and including a pixel region; a partition wall (23, 203) formed on the substrate (11, 101), partitioning the first electrode (12, 102), and including a surface with a recessed and projected form; a luminescent medium layer (19, 109) formed on the pixel region and the partition wall (23, 203), a film thickness of the partition wall (23, 203) being uneven according to the recessed and projected form; and a second electrode (17, 107) formed on the luminescent medium layer (19, 109).

Abstract: A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.

Abstract: It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.

Abstract: A method of fabricating a light emitting diode device comprises providing a substrate, growing an epitaxial structure on the substrate. The epitaxial structure includes a first layer on the substrate, an active layer on the first layer and a second layer on the active layer. The method further comprises depositing a conductive and reflective layer on the epitaxial structure, forming a group of first trenches and a second trench. Each of the first and second trenches extends from surface of the conductive and reflective layer to the first layer to expose part of the first layer. The method further comprises depositing conductive material to cover a portion of the conductive and reflective layer to form a first contact pad, and cover surfaces between adjacent first trenches to form a second contact pad. The second contact pad electrically connects the first layer by filling the conductive material in the first trenches.

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

Abstract: A semiconductor device and fabrication method thereof are provided, wherein the fabrication method of the semiconductor device includes the following steps. Forming a semiconductor layer on a substrate, wherein the semiconductor layer has a top surface and a bottom surface that is opposite to the top surface. The bottom surface is in contact with the substrate, and the top surface has a plurality of pits, the pits are extended from the top surface toward the bottom surface. Preparing a solution, wherein the solution includes a plurality of nanoparticles. Filling the nanoparticles into the pits. Forming a conducting layer on the semiconductor layer after filling the nanoparticles into the pits.

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

Abstract: A method which has a step of growing a thermostable-state ZnO-based single crystal on a ZnO single crystal substrate at a growth temperature that is equal to or greater than 600° C. and less than 900° C. by using a metalorganic compound containing no oxygen and water vapor based on an MOCVD method.

Abstract: A method which has a low-temperature growth step of growing a buffer layer of a ZnO-based single crystal on the substrate at a growth temperature in the range of 250° C. to 450° C. using a polar oxygen material and a metalorganic compound containing no oxygen; performing a heat treatment of the buffer layer to effect a transition of the buffer layer to a thermostable-state single crystal layer; and a high-temperature growth step of growing the ZnO-based single crystal layer on the thermostable-state single crystal layer at a growth temperature in the range of 600° C. to 900° C. using a polar oxygen material and a metalorganic compound containing no oxygen.

Abstract: An infrared LED device comprising a plurality of LED mesas; each mesa being approximately 25 to 500 microns separated by a gap of approximately 50 to 100 microns; each mesa having at least two indium contacts; a substrate; and a plurality of leads for connection to the contacts, whereby upon application of electrical power infrared light emission occurs. The method of making comprises providing a first substrate; using molecular beam epitaxy, growing a quantum well structure comprising alternating active and injection regions on the substrate; growing a thin p-type layer on the quantum well structure; etching the mesa area down to the substrate to form a plurality of mesas, forming first electrical contacts; deep etching to isolate each of the mesas; depositing first indium contacts on the mesas; providing a second substrate; depositing second electrical contacts; bonding the first and second substrates at the points of the electrical contacts.

Abstract: In a process for fabricating a thin-film transistor in which a gate electrode 4 is to be formed on a substrate 1, the process has the steps of forming the gate electrode 4 on the substrate 1, forming a metal oxide layer 7 in such a way as to cover the gate electrode 4, forming a source electrode 6 and a drain electrode 5, and carrying out annealing in an inert gas to change part of the metal oxide layer 7 into a channel region.

Abstract: A group III nitride semiconductor light emitting diode is revealed. A layered structure composed of group III nitrides is formed on the substrate through epitaxy growth of a hexagonal wurtzite crystal structure. The layered structure includes a n-type semiconductor layer, a light emitting layer on the n-type semiconductor layer, and a p-type semiconductor layer on the light emitting layer. A first electrode metal pad is formed on the p-type semiconductor layer and a second electrode metal pad on the n-type semiconductor layer. A direction from the first electrode metal pad to the second electrode metal pad is the same with that of C-axis [0001] of the hexagonal wurtzite crystal structure so as to speed up the movement of electron-hole and improve the combination efficiency of electron-hole by the electric field along the direction of C-axis [0001] in the hexagonal wurtzite crystal structure.

Abstract: An organic light emitting display is disclosed. The display has a pixel which includes a transistor and a capacitor. The active layer of the transistor and at least one of the electrodes of the capacitor comprise a semiconductor oxide.

Abstract: Semiconductor emitting devices that offset stresses applied to a quantum well region and reduce internal fields due to spontaneous and piezoelectric polarizations are disclosed. In one embodiment, a semiconductor emitting device includes a quantum well region comprising an active layer that emits light and at least one barrier layer disposed adjacent the active layer, a means for impressing an electric field across the quantum well region to inject carriers into the quantum well region, and a means for impressing an offset electric field across the quantum well region to offset the polarization field formed in the quantum well region.

Abstract: A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.

Abstract: A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved.

Abstract: A light emitting diode (LED) chip including: a substrate; and a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, sequentially deposited on the substrate, in which when a length of the substrate is L and a width of the substrate is W, L/W>10.

Abstract: A nanodevice, a transistor including the nanodevice, a method of manufacturing the nanodevice, and a method of manufacturing the transistor including the nanodevice are provided. The nanodevice includes a substrate, a mask layer located on the substrate and having at least one opening, and a nanotube formed on the substrate through the opening along an edge of the opening. The nanotube extends through the opening in a direction substantially perpendicular to a surface of the substrate.

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

Abstract: A light emitting diode includes a thermal conductive substrate, an p-type GaN layer, an active layer and an n-type GaN layer sequentially stacked above the substrate and an electrode pad deposited on the n-type GaN layer. A surface of n-type GaN layer away from the active layer has a first diffusing section and a second diffusing section. The first diffusing section is adjacent to the electrode pad and the second diffusing section is located at the other side of the first diffusing section opposite to the electrode pad, wherein the doping concentration of the first diffusing section is less than that of the second diffusing section. The n-type GaN layer has an electrical resistance larger than that of the first diffusing section which in turn is larger than that of the second diffusing section.

Abstract: Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.

Abstract: As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

Abstract: In accordance with certain embodiments, an unpackaged inorganic LED die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the unpackaged inorganic LED die or non-coplanarity of the contacts thereof.

Abstract: It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.

Abstract: An organic light-emitting display device includes: a substrate having a transistor region and a thin-film transistor having a gate electrode, a source/drain electrode and an active layer sequentially formed on the transistor region, wherein a portion of the source/drain electrode is between the active layer and substrate.

Abstract: A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.

Abstract: A semiconductor device that has excellent characteristics and mass productivity wherein the introduction of defects thereinto at the time of device separation is prevented, and a method for producing the semiconductor device. In particular, there is provided a high-performance semiconductor device having excellent luminous efficiency, longevity and mass productivity; and a method for producing this semiconductor device. The method for producing the semiconductor device has a step of forming, between a substrate comprising zinc oxide (ZnO) and a device operating layer, a defect-blocking layer having a crystal composition that is different from that of the substrate, and a step of forming device dividing grooves to a depth that goes beyond the defect-blocking layer, relative to the device operating layer side surface of the substrate on which the device operating layer is formed.

Abstract: An organic light emitting display includes data lines and scan lines intersecting each other, a scan driving unit for supplying a scan signal to the scan lines, a data driving unit for supplying a data signal to the data lines, and pixels defined at intersection points of the data and scan lines, each pixel having an organic light emitting diode, a first TFT with an inverted staggered top gate structure and connected to the organic light emitting diode, the first TFT including an oxide semiconductor as an active layer, and a second TFT with an inverted staggered bottom gate structure and configured to receive the scan signal from the scan lines, the second TFT including an oxide semiconductor as an active layer.

Abstract: Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.

Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z) ??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.

Abstract: Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.

Abstract: Certain example embodiments relate to methods of making oxide thin film transistor arrays (e.g., IGZO, amorphous or polycrystalline ZnO, ZnSnO, InZnO, and/or the like), and devices incorporating the same. Blanket layers of an optional barrier layer, semiconductor, gate insulator, and/or gate metal are disposed on a substrate. These and/or other layers may be deposited on a soda lime or borosilicate substrate via low or room temperature sputtering. These layers may be later patterned and/or further processed in making a TFT array according to certain example embodiments. In certain example embodiments, all or substantially all TFT processing may take place at a low temperature, e.g., at or below 150 degrees C., until a post-annealing activation step, and the post-anneal step may take place at a relatively low temperature (e.g., 200-250 degrees C.).

Abstract: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.

Abstract: Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

Abstract: An object is to simplify a manufacturing process of a transistor, and to manufacture a light-emitting display device not only with a smaller number of photomasks compared to the number of photomasks used in the conventional method but also without an additional step. By using an intrinsic or substantially intrinsic high-resistance oxide semiconductor for a semiconductor layer included in the transistor, so that a step of processing the semiconductor layer into an island shape in each transistor can be omitted. Unnecessary portions of the semiconductor layer are etched away at the same time as a step of forming an opening in an insulating layer formed in an upper layer of the semiconductor layer, so that the number of photolithography steps is reduced.

Abstract: A ZnO-based semiconductor light emitting element includes a ZnO-based semiconductor layer formed on a rectangular sapphire A-plane substrate having a principal surface lying in the A-plane {11-20}. The substrate has a thickness of 50 to 200 ?m and is surrounded by two parallel first side edges forming an angle in a range of 52.7° to 54.7° with respect to the m-axis orthogonal to the c-axis and two parallel second side edges orthogonal to the first side edges. The light emitting element is obtained by: forming, on a surface of the sapphire A-plane substrate opposite to the surface on which the ZnO-based semiconductor layer is formed, first scribed grooves forming an angle in a range of 52.7° to 54.7° with respect to the m-axis and second scribed grooves orthogonal to the first scribed grooves; and breaking the substrate along the first scribed grooves and then along the second scribed grooves.

Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. The pixel portion and the driver portion are provided over the same substrate, whereby manufacturing cost can be reduced.

Abstract: A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.

Abstract: The present invention relates to a light emitting diode (100, 109), comprising at least one p-doped structure, a plurality of n-doped zinc-oxide (ZnO) nanowires (104) arranged on the at least one p-doped structure, thereby forming a plurality of p-n junctions (107a, 107b), an insulating structure (105) arranged among the plurality of ZnO-nanowires (104), to electrically separate the plurality of p-n junctions (107a, 107b), and a transparent conductive layer (106), arranged on the at least one insulating structure (105) and in electrical contact with the plurality of ZnO-nanowires (104), to enable application of a voltage over the plurality of p-n junctions (107a, 107b), thereby enabling emission of light. An advantage with the above light emitting diode (100, 109) is its improved broadband spectral distribution. Furthermore, as ZnO-nanowires (104) are used, it is possible to achieve a high brightness.

Abstract: Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.

Abstract: A light emitting device comprising a first semiconductor layer, a second semiconductor layer and a quantum well layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on the opposite sides of the quantum well layer, the quantum well layer comprising a plurality of quantum well rods which are separated from each other, and each of the quantum well rods has only one quantum well.

Abstract: The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide layer on a silicon substrate. An optical waveguide is formed in the oxide layer and has an input coupled to the ZnO emitter. A detector is coupled to an output of the optical waveguide.

Abstract: A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide semiconductor layer of a pixel area is etched by using a half-tone mask, a metal layer is formed at a contact hole of the etched gate insulting layer, and then a passivation layer formed thereon is etched. Thus, an overhang of the passivation layer can be prevented from being generated when the gate insulating layer is etched, and accordingly, the fabrication process can be simplified.

Abstract: A pixel structure of an electroluminescent display panel includes a substrate, a first patterned conductive layer, an insulating layer, a second patterned conductive layer, an active layer, a first passivation layer and an electroluminescent device. The first patterned conductive layer includes a gate. The insulating layer, disposed on the substrate and the first patterned conductive layer, has at least a first contact hole partially exposing the gate. The second patterned conductive layer, disposed on the insulating layer, includes a first source, a first drain, and a second drain, where the second drain is electrically connected to the gate through the first contact hole of the insulating layer.

Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.

Abstract: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.

Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.

Abstract: Methods and systems are provided that may be used to utilize and manufacture a light sources apparatus. A first light emitting diode emits light having a first wavelength, and a second light emitting diode for emitting light having a second wavelength. Each of the first and second light emitting diodes may comprise angled facets to reflect incident light in a direct toward a top end of the first light emitting diode. The second light emitting diode comprising angled facets may reflect incident light in a direction toward a top end of the second light emitting diode. A first distributed Bragg reflector is disposed between the top end of the first light emitting diode and a bottom end of the second light emitting diode to allow light from the first light emitting diode to pass through and to reflect light from the second light emitting diode.