Characterized By Doping Material (epo) Patents (Class 257/E33.036)
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Patent number: 8729597Abstract: Provided is a method for controlling a device using a doped carbon-nanostructure, and a device including the doped carbon-nanostructure, in which the method for controlling the device selectively controls the mobility of electrons or holes using N-type or P-type doped carbon-nanostructure; the N-type or P-type impurities-doped carbon-nanostructure can selectively control the transport of electrons or holes according to a doped material; and also since the doped carbon-nanostructure limits the transport of charge that is the opposite charge to the transport facilitating charge, it can improve the efficiency of device by adding to a functional layer of device or using as a separate layer in the electrons or holes-only transporting device.Type: GrantFiled: November 16, 2011Date of Patent: May 20, 2014Assignee: Korea Advanced Institute of Science and TechnologyInventors: Sang Ouk Kim, Ji Sun Park, Ju Min Lee, Myoung Hoon Song
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Patent number: 8575594Abstract: A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.Type: GrantFiled: February 27, 2012Date of Patent: November 5, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung Hoon Lee, Ki Bum Nam, Dae Sung Kal
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Patent number: 8154008Abstract: A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.Type: GrantFiled: July 24, 2008Date of Patent: April 10, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung Hoon Lee, Ki Bum Nam, Dae Sung Kal
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Publication number: 20110275174Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.Type: ApplicationFiled: July 14, 2011Publication date: November 10, 2011Applicant: PARTIAL Assignment By Aravinda Kar To University of Central FloriaInventors: Nathaniel R. Quick, Aravinda Kar
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Patent number: 7872269Abstract: Provided is a gallium nitride semiconductor light emitting element capable of stabilizing a drive voltage by reducing carrier depletion attributable to spontaneous polarization and piezo polarization generated at the interface between an AlGaN semiconductor layer and a GaN semiconductor layer. A gallium nitride semiconductor crystal 2 including a light emitting region is formed on the R plane of a sapphire substrate 1. In addition, in another constitution, a gallium nitride semiconductor crystal 2 is formed on the A plane of a GaN substrate 3 or on the M plane of a GaN substrate 4. The growth surface of these gallium nitride semiconductor crystals 2 are not an N (nitrogen) polar face or a Ga polar face but are non-polar faces. This can decrease the strength of an electric field caused by spontaneous polarization and piezo polarization generated at the interface of GaN/AlGaN at the p side. Thus, carrier depletion can be avoided.Type: GrantFiled: November 29, 2006Date of Patent: January 18, 2011Assignee: ROHM Co., Ltd.Inventor: Ken Nakahara
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Patent number: 7855385Abstract: The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm?3; donor impurities that are in a concentration less than 1×1019 cm?3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm?3 and donor impurities that are in a concentration less than 1×1019 cm?3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.Type: GrantFiled: May 12, 2008Date of Patent: December 21, 2010Assignees: Meijo University, National University Corporation Kyoto Institute of TechnologyInventors: Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Motoaki Iwaya, Masahiro Yoshimoto, Hiroyuki Kinoshita
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Patent number: 7675079Abstract: In silicon-carbide based light emitting diodes (LEDs) and other similar applications, diamond crystals are used to provide an intermediate refractive index that permits more of the ultraviolet light generated in the diode to reach the phosphors, producing a brighter light with greater efficiency.Type: GrantFiled: October 27, 2005Date of Patent: March 9, 2010Inventor: Victor B. Kley
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Publication number: 20080277670Abstract: The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm?3; donor impurities that are in a concentration less than 1×1019 cm?3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm?3 and donor impurities that are in a concentration less than 1×1019 cm?3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.Type: ApplicationFiled: May 12, 2008Publication date: November 13, 2008Applicants: Meijo University, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGYInventors: Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Motoaki Iwaya, Masahiro Yoshimoto, Hiroyuki Kinoshita