Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silica particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
Type:
Grant
Filed:
August 27, 2012
Date of Patent:
March 19, 2013
Assignee:
NanoGram Corporation
Inventors:
Henry Hieslmair, Shivkumar Chiruvolu, Hui Du
Abstract: A semiconductor device includes a pair of electromagnetically coupled inductors. Each of the inductors is comprised of a plurality of through electrodes which extend through a semiconductor substrate, and wires which connect the plurality of through electrodes in series.
Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
Type:
Grant
Filed:
July 26, 2011
Date of Patent:
September 11, 2012
Assignee:
NanoGram Corporation
Inventors:
Henry Hieslmair, Shivkumar Chiruvolu, Hui Du
Abstract: Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.
Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
Type:
Grant
Filed:
January 2, 2008
Date of Patent:
February 22, 2011
Assignee:
NanoGram Corporation
Inventors:
Henry Hieslmair, Shivkumar Chiruvolu, Hui Du
Abstract: A method of fabricating an array substrate for a display device includes steps of forming a gate line and a gate electrode on a substrate, forming a gate insulating layer and an intrinsic amorphous silicon layer, forming an oxide semiconductor layer, increasing a conductive property of the oxide semiconductor layer, forming a metal layer, forming a first photoresist pattern and a second photoresist pattern having a thinner thickness than the first photoresist pattern, forming a data line, a source drain pattern, an oxide semiconductor pattern and an active layer, removing the second photoresist pattern and exposing the source drain pattern, wet-etching the source drain pattern using a first etchant, thereby forming source and drain electrodes, wet-etching the oxide semiconductor pattern using a second etchant, thereby forming ohmic contact layers, removing the first photoresist pattern, forming a passivation layer having a drain contact hole exposing the drain electrode on the source and drain electrodes, and
Type:
Application
Filed:
December 23, 2009
Publication date:
August 19, 2010
Inventors:
Hyun-Sik Seo, Jong-Uk Bae, Dae-Hwan Kim