Abstract: An electronic component package, includes a package substrate portion constructed by a silicon substrate in which a through hole is provided, an insulating layer formed on both surface sides of the silicon substrate and an inner surface of the through hole, and a through electrode filled in the through hole, and a frame portion provided upright on a peripheral portion of the package substrate portion to constitute a cavity on the silicon substrate, wherein an upper surface of the through electrode in the cavity is planarized such that a height of the through electrode is set equal to a height of the insulating layer. The frame portion is joined to the package substrate portion by the low-temperature joining utilizing the plasma process after the through electrode is planarized.

Abstract: In a semiconductor light emitting device having a matrix of a plurality of bumps composed of one n-bump formed on an n-electrode layer and of a large number of p-bumps formed on p-electrode layers, the occurrence of a faulty junction after mounting can be suppressed by placement of the n-bump at center of the bump array, because the position at the center is most resistant to occurrence of stress after the mounting. Employment of such a configuration of bump array increases reliability of mounting thereof while improving uniformity of light emission intensity in the semiconductor light emitting device having an increased size.

Abstract: This method of manufacturing a semiconductor laser apparatus includes steps of forming a first solder layer on a first electrode, forming a second solder layer with a second melting point on a second electrode through a barrier layer, forming a reaction solder layer with a third melting point higher than the second melting point by reacting the first solder layer having a first melting point with the first electrode and bonding a first semiconductor laser device to a base through the reaction solder layer, and bonding a second semiconductor laser device by melting the second solder layer with the second melting point after the step of bonding the first semiconductor laser device.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a semiconductor substrate comprising a first surface at a first depth from an upper surface of the semiconductor substrate and a second surface at a second depth from the first surface; and a light emitting part on the second surface of the semiconductor substrate.

Abstract: A flip chip type LED lighting device manufacturing method includes the step of providing a strip, the step of providing a submount, the step of forming a metal bonding layer on the strip or submount, the step of bonding the submount to the strip, and the step of cutting the structure thus obtained into individual flip chip type LED lighting devices.

Abstract: A method for manufacturing a light emitting device includes: forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate; forming a dielectric film on a second surface side opposite to the first surface of the multilayer body, the dielectric film having a first and second openings on a p-side electrode and an n-side electrode provided on the second surface; forming a seed metal on the dielectric film and an exposed surface of the first and second openings; forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal; separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer; and forming a resin in a space from which the seed metal is removed.

Abstract: According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection.

Abstract: According to one embodiment, a light emitting device includes a ceramics substrate, a metallic thermally-conductive layer formed on the substrate in which the substrate involves no electric connection, a light emitting element mounted on the metallic thermally-conductive layer, and a metallic bonding layer interposed between the metallic thermally-conductive layer and the light emitting element to bond the light emitting element to the metallic thermally-conductive layer.

Abstract: Methods of forming devices, including LED devices, are described. The devices may include fluorinated compound layers. The methods described may utilize a plasma treatment to form the fluorinated compound layers. The methods described may operate to produce an intermetallic layer that bonds two substrates such as semiconductor wafers together in a relatively efficient and inexpensive manner.

Abstract: A method of making a semiconductor chip assembly includes providing first and second posts, first and second adhesives, first and second conductive layers and a dielectric base, wherein the first post extends from the dielectric base in a first vertical direction into a first opening in the first adhesive and is aligned with a first aperture in the first conductive layer, the second post extends from the dielectric base in a second vertical direction into a second opening in the second adhesive and is aligned with a second aperture in the second conductive layer and the dielectric base is sandwiched between and extends laterally from the posts, then flowing the first adhesive in the first vertical direction and the second adhesive in the second vertical direction, solidifying the adhesives, then providing a conductive trace that includes a pad, a terminal and selected portions of the conductive layers, wherein the pad extends beyond the dielectric base in the first vertical direction and the terminal extends

Abstract: LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

Abstract: A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.

Abstract: A light-emitting apparatus of the present invention includes: a mounting base 260 which has a wire 265; and a nitride-based semiconductor light-emitting device flip-chip mounted on the mounting base 260. The nitride-based semiconductor light-emitting device 100 includes a GaN-based substrate 10 which has an m-plane surface 12, a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN-based substrate 10, and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32. The Mg layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20. The electrode 30 is coupled to the wire 265.

Abstract: A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the LED unit may continuously emit light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply. Since each AC LED micro-die is operated forwardly, the structure of AC LED dies also provides protection from electrical static charge (ESD) and may operate under a high voltage.

Abstract: A lamp seat includes a metal substrate having opposite first and second surfaces, first and second conductive patterns formed on the first surface, and third and fourth conductive patterns formed on the second surface and connected respectively and integrally to the first and second conductive patterns. A heat-conductive first insulating layer is disposed between the metal substrate and each of the first, second, third and fourth conductive patterns. A heat-conductive second insulating layer is formed over the first insulating layer such that corresponding parts of the first and second conductive patterns are exposed outwardly of the second insulating layer for electrical connection with positive and negative electrodes of a light emitting diode, respectively.

Abstract: In one embodiment, a surface-mount device comprises a casing having opposed, first and second main surfaces, side surfaces, and end surfaces. A lead frame partially encased by the casing comprises (1) an electrically conductive LED chip carrier part having a surface carrying a linear array of LEDs adapted to be energized to produce in combination a substantially full range of colors, each LED having a first electrical terminal and a second electrical terminal, the first terminal of each of the LEDs being electrically and thermally coupled to the chip carrying surface of the chip carrier part; and (2) electrically conductive connection parts separate from the chip carrier part, each of the connection parts having a connection pad, the second terminal of each of the LEDs being electrically coupled to the connection pad of a corresponding one of the connection parts with a single wire bond. The linear array of LEDs extends in a first direction, and each of the chip carrier part and connection parts has a lead.

Abstract: A luminous structure based on light-emitting diodes, which includes: a first dielectric element with a substantially plane main face associated with a first electrode; a second dielectric element with a substantially plane main face associated with a second electrode that faces the first electrode and lies in a different plane; at least a first light-emitting diode including a semiconductor chip including, on first and second opposed faces, first and second electrical contacts, the first electrical contact being electrically connected to the first electrode, the second electrical contact being electrically connected to the second electrode, and at least the first element at least partly transmitting radiation within the ultraviolet or in the visible.

Abstract: An LED module to realize light source performance as desire is comprised of multiple LEDs, a light-emitting chip of each LED being disposed in a carrier on a substrate; conduction circuits with different polarities being provided perimeter to the carrier on the substrate; golden plate wire connecting the chip and circuits; carrier being filled with fluorescent material before encapsulation; a slope being formed on the inner wall of the carrier; and the light-emitting angles varying depending on inclination carrier or the encapsulating height.

Abstract: Provided is a light emitting device. The light emitting device comprises a package body, a plurality of electrodes, a light emitting diode, and a lens. The package body comprises a trench. The plurality of electrodes is disposed on and/or in the package body. The light emitting diode is disposed on the package body and is electrically connected to the electrodes. The lens is disposed on an inner side of the trench.

Abstract: A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.

Abstract: A lighting device including a metal substrate to prevent temperature rise of LED chip is offered. The lighting device includes the metal substrate, an anode or cathode electrode of the LED chip disposed on the metal substrate, brazing materials connecting the LED chip and the metal substrate, and a groove formed in the anode or cathode electrode. Forming the groove can prevent an occurrence of a crack in the brazing materials. Also, a lighting device includes the metal substrate, an anode and cathode electrode of the LED chip disposed on the metal substrate and brazing materials connecting the LED chip and the metal substrate. Further, a slit is formed in the metal substrate between the anode and cathode electrode. Forming the slit in the metal substrate can prevent an occurrence of a crack in the brazing materials.

Abstract: A semiconductor light-emitting device includes: a support; a semiconductor light-emitting element bonded to the support and comprising a first electrode, a second electrode, and a semiconductor layer including at least an active layer, at least one of the first and second electrodes overlying the semiconductor layer; and a wiring metal formed to extend from above a portion of an upper surface of the support not underlying the semiconductor light-emitting element to one said electrode overlying the semiconductor layer. The electrode is fed with power through the wiring metal.

Abstract: The present invention relates to a method for easily manufacturing an illumination device in which a surface mount chip-type LED is used, and a wiring board is formed into a truncated conical or another shape. The method includes, in a flexible strip-like wiring board having a partial ring or a linear shape, providing a through-hole T for filling with solder paste S at a wiring end portion L to be connected with a terminal of an LED, temporarily fixing the LED with bond B onto the wiring board held in a plate-like state, filling the through-hole T with the solder paste S from a back surface of the wiring board, rounding the wiring board mounted with the LED into a truncated conical or cylindrical shape, and reflowing the wiring board in the rounded state to solder the LED.

Abstract: Disclosed herein is a method for producing an LED array grid including the steps of (i) arranging N electrically conducting parallel wires, where N is an integer >1, thus creating an array of wires having a width D perpendicular to a direction of the wires, (ii) arranging LED components to the array of wires such that each LED component is electrically coupled to at least two adjacent wires, (iii) stretching the array of wires such that the width D increases, and arranging the stretched LED array grid onto a plate or between two plates

Abstract: To provide a substrate for a light-emitting device, which is provided with a reflection layer having a high optical reflectance and being less susceptible to deterioration of the reflectance due to corrosion and which has an improved light extraction efficiency, and a light-emitting device employing such a substrate.

Abstract: Provided are a light emitting device and a light unit. The light emitting device includes a package body including a body, a plurality of electrodes on the body, and a concave portion on at least one of the plurality of electrodes, a light emitting chip including a convex portion corresponding to the concave portion to couple and attach the concave portion to the convex portion, the light emitting chip including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and an adhesion layer on a bottom surface of the light emitting chip.

Abstract: A structure of a light emitting diode is provided. In one aspect, a light emitting diode structure comprises a light emitting diode, a conductive frame, and a substrate. The conductive frame is electrically connected to the light emitting diode and has a fixing hole connecting a first side of the conductive frame and a second side of the conductive frame opposite the first side. The fixing hole has a ladder-shaped inner sidewall with a first radius of the inner sidewall adjacent the first side smaller than a second radius of the inner sidewall adjacent the second side. The substrate has a conductive pillar that is received in the fixing hole by entering the fixing hole from the first side of the conductive frame and deformed such that the conductive pillar adheres to the ladder-shaped inner sidewall of the fixing hole.

Abstract: An optical semiconductor device includes: an optical semiconductor element including a light-emitting layer formed on a first principal surface, a first electrode formed on the light-emitting layer and having a smaller size than the first principal surface, and a second electrode formed on a second principal surface different from the first principal surface; a first lead portion including a bonding region to which the first electrode is bonded and which has a smaller size than the first principal surface, and a first groove portion formed on an outer peripheral region adjacent to the bonding region, the first lead portion being electrically connected to the first electrode bonded to the bonding region by use of a bonding member; and a second lead portion electrically connected to the second electrode by use of a connecting member.

Abstract: An LED indicator casing (1R) has: a casing (1a) including a bottom face (S1), a front face (S2) having an aperture (2a) for light emission, and paired side faces (S3 and S4) adjoining the front face (S2); and paired lead terminals (11 and 12), one of which has a light-emitting element (LED)(21) fitted thereto. The paired lead terminals (11 and 12) are led out to the bottom face (S1) via the paired side faces (S3 and S4) of the casing (1a) respectively.

Abstract: To suppress adhesion of impurities to a semiconductor light emitting element, there is provided a nitride-based semiconductor light emitting element including: a laminated body having a first cladding layer, an active layer formed over the first cladding layer, and a second cladding layer formed over the active layer; and a dielectric film with a thickness of 3 ?m or more that is formed on the side surface of the laminated body on the side where light is emitted and that covers at least a first side surface of the active layer.

Abstract: An integrated circuit package system includes: mounting a device structure over a package carrier; connecting an internal interconnect between the device structure and the package carrier; forming an interconnect lock over the internal interconnect over the device structure with interconnect lock exposing the device structure; and forming a package encapsulation adjacent to the interconnect lock and over the package carrier.

Abstract: A method for manufacturing a resin-embedded semiconductor light-emitting device that is capable of preventing a semiconductor film from being damaged when a growth substrate is delaminated using a laser lift-off method, and that is capable of preventing foreign matter from adhering to the semiconductor film when a resin material is applied. A laser exposure step to delaminate the growth substrate from the semiconductor film comprises a first laser exposure step for performing laser exposure at an energy density at which the resin is broken down but the semiconductor film is not broken down, in a range including a portion adjacent to at least one section of the semiconductor film divided by dividing grooves and at least one section of resin, and a second exposure step for performing laser exposure at an energy density at which the semiconductor film can be broken down in a range including at least one section.

Abstract: A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.

Abstract: A base apparatus includes a base and two finger devices. The base has a first surface and two opposite sides. The finger devices are respectively mounted on the sides of the base, are made of conductive material, and each of the finger devices has multiple fingers. The fingers are extended on the first surface of the base, wherein the fingers of a first finger device are arranged respectively corresponding to the fingers of a second finger device whereby each pair of corresponding fingers supports an illuminating device. The base has a height, each of the fingers has a width and the width is smaller than the height. When the LED is mounted onto a substrate, the LED can be mounted on the substrate by its side so that an entire assembly height of the LED is reduced and is equal to the width of the LED.

Abstract: A light-emitting diode (LED) is provided, wherein the LED comprises an epitaxial structure, a bonding layer and a composite substrate. The composite substrate comprises a patterned substrate having a pattern and a conductive material layer disposed around the patterned substrate. The bonding layer is formed on the composite substrate. The epitaxial structure is formed on the bonding layer.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a semiconductor substrate including a first surface at a first depth from an upper surface of the semiconductor substrate and a second surface at a second depth from the first surface; and a light emitting part on the second surface of the semiconductor substrate.

Abstract: A packaged light emitting device includes a carrier substrate having a top surface and a bottom surface, first and second conductive vias extending from the top surface of the substrate to the bottom surface of the substrate, and a bond pad on the top surface of the substrate in electrical contact with the first conductive via. A diode having first and second electrodes is mounted on the bond pad with the first electrode is in electrical contact with the bond pad. A passivation layer is formed on the diode, exposing the second electrode of the diode. A conductive trace is formed on the top surface of the carrier substrate in electrical contact with the second conductive via and the second electrode. The conductive trace is on and extends across the passivation layer to contact the second electrode.

Abstract: A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.

Abstract: A semiconductor light emitting device of the present invention includes a plurality of light emitting elements, a package body for storing the light emitting elements, wiring patterns being electrically connected to the light emitting elements, and Au wires for electrically connecting the light emitting elements and the wiring patterns, the package body including mounting concave portions for storing the respective light emitting elements, and storing concave portion for storing the mounting concave portions and the Au wires, the mounting concave portions being aligned on a linear line and spaced from each other with an equal pitch.

Abstract: A light source and method for making the same are disclosed. The light source includes a substrate, a die, and a cup. The substrate has a plurality of electrical traces thereon and the die includes an LED that is connected to two of the traces. The cup overlies the substrate and is filled with an encapsulant material. The die is located within the cup and is encapsulated by the substrate and the encapsulant material. The cup and encapsulant material have substantially the same coefficient of thermal expansion. The cup can include reflective sidewalls positioned to reflect light leaving the die. The cup, encapsulant and substrate can be constructed from the same material.

Abstract: A surface mount LED for attaching an LED to a substrate using a conventional reflow soldering technique. The surface mount LED according to this invention includes an LED and a holder. The LED includes a plurality of leads. The holder supports the LED and includes a plurality of feet arranged at approximately equal intervals around the perimeter of a base of the holder. Each lead is wrapped around a respective foot. The resulting wrapped lead forms a contact point corresponding with a solder pad layout for attaching the surface mount LED to a substrate.

Abstract: An RFID tag including a base including a resin material, an antenna pattern disposed on a surface of the base, and a reinforcement pad disposed on the surface of the base. A thermosetting adhesive is applied onto the antenna pattern and the reinforcement pad, and a circuit chip is electrically coupled to the antenna pattern via the thermosetting adhesive. The reinforcement pad is formed within a region where the circuit chip is mounted, and the circuit chip includes a first protrusion contacting the antenna pattern and a second protrusion contacting the reinforcement pad.

Abstract: A semiconductor light emitting device is provided so that an optical axis thereof is properly set parallel with the mounting board when the device is mounted on the mounting board. The semiconductor light emitting device can have a structure in that light can be incident on the light guide plate with high efficiency and uniform introduction into the light guide plate. A multi-piece substrate can include electrodes, a plurality of semiconductor light emitting elements, and a sealing resin for sealing them simultaneously. The thus obtained integrated substrate is cut into individual semiconductor light emitting device bodies. On one of the cut end faces, which serves as a surface to be mounted onto a mounting board, a light-shielding reflective film can be coated over an area from the edge of the light emission surface of the sealing resin to at least part of the substrate. On the other cut end face, the sealing resin can be covered with a light-shielding reflective film.

Abstract: Four LED chips are mounted on a sub-mount substrate so as to be parallel thereto. A wire 9a is installed to extend between a pad electrode 7a of two pad electrodes 7a, 7b provided in two diagonal corners of an upper surface of the LED chip 1 which pad electrode 7a is disposed on a first edge 1a side of the LED chip 1 and a bonding area of a conductive pattern 13 so as to be inclined at 15 to 40 degrees towards an orientation which moves away from a first edge 1a with respect to an orthogonal moving-away direction D relative to the first edge 1a. A wire 9b is installed to extend between the pad electrode 7b which is disposed on a second edge 1b side of the LED chip 1 and a bonding area of the conductive pattern 1 so as to be inclined 15 to 40 degrees towards an orientation which approaches a second edge 1b of the LED chip 1 with respect to an orthogonal moving-away direction D relative to the second edge 1b.

Abstract: Disclosed are an LED package, an LED package module having the same and a manufacturing method thereof, and a head lamp module having the same and a control method thereof. The light emitting diode package includes: a package substrate; a light emitting diode chip mounted on one surface of the package substrate; an electrode pad formed on the other surface of the package substrate and electrically connected to the light emitting diode chip; and a heat radiation pad formed on the other surface of the package substrate and electrically insulated from the electrode pad.

Abstract: Provided are a light emitting module and a manufacturing method thereof, the light emitting module having improved heat radiation properties and improved adhesion between a sealing resin for sealing a light emitting element and other members. A light emitting module 10 includes: a metal substrate 12; a concave part 18 provided by partially denting an upper surface of the metal substrate 12; a light emitting element 20 accommodated in the concave part 18; and a sealing resin 32 covering the light emitting element 20. A convex part 11 is further provided on the upper surface of the metal substrate 40 in a region thereof surrounding the concave part 18. The sealing resin 32 is allowed to adhere to the convex part 11, thereby improving adhesion strength between the sealing resin 32 and the metal substrate 12.

Abstract: An optoelectronic semiconductor component includes a connection carrier with at least two connection points and configured with a silicone matrix with a fiber reinforcement, and at least one optoelectronic semiconductor chip mounted on the connection carrier and in direct contact therewith.

Abstract: A modular light emitting diode (LED) mounting configuration is provided including a light source module having a plurality of pre-packaged LEDs arranged in a serial array. The module is connected to a heat dissipating plate configured to mount to an electrical junction box. Thus, heat from the LEDs is conducted to the heat dissipating plate and to the junction box. A sensor is configured to detect environmental parameters and a driver is configured to illuminate the LEDs in response to the environmental parameters, thereby selectively configuring the LEDs to function in a wide variety of useful applications.

Abstract: A semiconductor light-emitting device can include a submount on which a semiconductor light-emitting element is mounted. The device can have a high light utilization efficiency with high reliability and can achieve a reduction in manufacturing cost as well as a decrease in size. The submount can have a reverse trapezoidal cross section having an upper surface that is larger than a bottom surface of the semiconductor light-emitting element. An adhesive can be used to fix the submount to the base board such that, when the submount is observed from above the semiconductor light-emitting element, the adhesive is not seen from above. In this state, the semiconductor light-emitting element can be connected to the base board via a bonding wire.

Abstract: The invention relates to a high power LED package, in which a package body is integrally formed with resin to have a recess for receiving an LED chip. A first sheet metal member is electrically connected with the LED chip, supports the LED chip at its upper partial portion in the recess, is surrounded by the package body extending to the side face of the package body, and has a heat transfer section for transferring heat generated from the LED chip to the metal plate of the board and extending downward from the inside of the package body so that a lower end thereof is exposed at a bottom face of the package body thus to contact the board. A second sheet metal member is electrically connected with the LED chip spaced apart from the first sheet metal member for a predetermined gap, and extends through the inside of the package body to the side face of the package body in a direction opposite to the first sheet metal member. A transparent sealant is sealingly filled up into the recess.