Abstract: A heat-curable silicone resin-epoxy resin composition that is ideal as a premolded package for a high-brightness LED or solar cell. The composition contains (A) a heat-curable silicone resin, (B) a combination of a triazine derivative epoxy resin and an acid anhydride, or a prepolymer obtained by reaction of them, (C) an inorganic filler, and (D) a curing accelerator. The composition exhibits excellent curability, and yields a uniform cured product that displays excellent retention of heat resistance and light resistance over long periods of time, and suffers minimal yellowing.

Abstract: A light-emitting diode device and a method for manufacturing the same are described. The light-emitting diode device includes a metal heat dissipation bulk, a frame, a light-emitting diode chip and a package encapsulant. The metal heat dissipation bulk includes a curve protrusion ring. The frame is disposed on the metal heat dissipation bulk outside the curve protrusion ring. The frame includes at least two electrode pads respectively disposed at two sides of the curve protrusion ring. The light-emitting diode chip is disposed on the metal heat dissipation bulk in an inner side of the curve protrusion ring. The light-emitting diode chip has a first electrode and a second electrode of different conductivity types, and the first electrode and the second electrode are electrically connected to the electrode pads respectively. The package encapsulant encapsulates the light-emitting diode chip, the curve protrusion ring, and a portion of each electrode pad.

Abstract: A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a first electrode on the light emitting structure; and a photon escape layer on the light emitting structure. Further, the photon escape layer has a refractive index that is between a refractive index of the light emitting structure and a refractive index of an encapsulating material with respect to the light emitting structure such that an escape probability for photons emitted by the light emitting structure is increased.

Abstract: A light emitting device includes a mounting substrate having a reflective layer that defines spaced apart anode and cathode pads, and a gap between them. A light emitting diode die is flip-chip mounted on the mounting substrate, such that the anode contact of the LED die is bonded to the anode pad and the cathode contact of the LED die is bonded to the cathode pad. A lens extends from the mounting substrate to surround the LED die. The reflective layer extends on the mounting substrate to cover substantially all of the mounting substrate that lies beneath the lens, excluding the gap, and may also extend beyond the lens.

Abstract: Disclosed herein is a method for controlling the fluidity of a phosphor, a phosphor and a phosphor paste, the method comprising the steps of: treating the surface of a phosphor with a silane compound comprising a double bond; and polymerizing the monomer on the surface of the phosphor to form a polymer membrane thereon. The phosphor having the polymer membrane formed thereon exhibits significantly stabilized fluidity within a polymer encapsulant.

Abstract: A packaging method of wafer level chips including following steps is provided. First, a plurality of chips attached on a first film is provided, and the chips on the first film are disposed respectively corresponding to a plurality of electrode patterns of a substrate. Then, a phosphor layer is respectively formed on at least one surface of each of the chips. Next, a second film is disposed on the phosphor layers, and the second film is opposite to the first film. Further, the first film is removed from the base surface of each of the chips. Then, the base surfaces of the chips are attached to the substrate. Afterward, each of the chips is electrically connected with the corresponding electrode pattern through a wire bonding. Finally, a packaging gel is provided to cover each of the chips, and the packaging gel is solidified.

Abstract: A light emitting semiconductor device includes a base substrate; a light emitting semiconductor element including a crystal growth basis and provided on the base substrate so that the crystal growth basis faces in opposite direction to the base substrate; a first transparent sealing medium which seals the light emitting semiconductor on the base substrate; and a second transparent sealing medium which seals the light emitting semiconductor over the first transparent sealing medium and contains phosphor. A thickness of the second sealing medium in a portion with high emission intensity is larger than that of the other portion of the first sealing medium; and the portion with high emission intensity is defined as a portion where light emission intensity from the light emitting semiconductor element is maximum.

Abstract: The invention relates to a light-absorbing or light-emitting solar cell assembly and also a solar cell arrangement which is constructed from 2 to 10,000 of the solar cell assemblies according to the invention.

Abstract: A light emitting diode (LED) device includes a substrate, a supporting member, an electrode layer, an LED chip and an encapsulant. The substrate has a first surface and a second surface. The substrate defines a hole extending through the first surface and the second surface. The supporting member is attached to the second surface of the substrate and covers the hole. The supporting member and the substrate cooperatively define a cavity. The electrode layer is arranged on the first surface of the substrate and an inner surface of the cavity. The encapsulant is arranged on the electrode layer and covers the LED chip.

Abstract: A light-emitting device package having improved connection reliability of a bonding wire, heat dissipation properties, and light quality due to post-molding and a method of manufacturing the light-emitting device package. The light-emitting device package includes, for example, a wiring substrate having an opening; a light-emitting device that is disposed on the wiring substrate and covers the opening; a bonding wire electrically connecting a bottom surface of the wiring substrate to a bottom surface of the light-emitting device via the opening; a molding member that surrounds a side surface of the light-emitting device and not a top surface of the light-emitting device, which is an emission surface, is formed on a portion of a top surface of the wiring substrate, and is formed in the opening of the wiring substrate to cover the bonding wire; and a solder resist and a bump formed on the bottom surface of the wiring substrate.

Abstract: Glass is provided which is capable of covering at a covering treatment temperature of at most 400° C. and which has a low thermal expansion coefficient and excellent weather resistance. Glass comprising, as represented by mol % based on oxides, from 29% to 33% of P2O5, from 43% to 58% of SnO, from 11% to 25% of ZnO, from 0.1% to 2% of Ga2O3, from 0.5% to 5% of CaO, and from 0% to 1% of SrO, provided that the sum X of ZnO, Ga2O3 and CaO is within a range of from 13% to 27%, as represented by mol % based on oxides.

Abstract: A light emitting diode apparatus comprises a substrate having a circuit pattern, a reflection layer disposed on the substrate, at least one light emitting element disposed on the reflection layer, a reflector disposed around the at t one light emitting element, a sealing material formed over the at least one light emitting element and a phosphor layer disposed over the sealing material. The light emitting element comprises a conductive portion electrically coupled to the circuit pattern. In one embodiment, a plurality of light emitting elements are linearly arrayed, and a spacer is disposed between every two adjacent light emitting elements.

Abstract: A method of manufacturing a light emitting device comprises: a) depositing over substantially the entire surface of a LED diode wafer having an array of LEDs formed on a surface thereof a mixture of at least one phosphor material and a polymer material, wherein the polymer material is transmissive to light generated by the LEDs and to light generated by the at least one phosphor material; b) mechanically stamping the phosphor/polymer mixture with a stamp having features configured such as to form passages in the phosphor/polymer corresponding to electrode contact pads of each LED thereby enabling access to each electrode contact pad; c) curing the polymer; d) removing the stamp; and e) dividing the LED wafer into individual light emitting devices. The stamp comprises a dissolvable material (polyvinyl alcohol) and the stamp is removed by dissolving it using a solvent (e.g. water).

Abstract: A packaging method of wafer level chips including following steps is provided. First, a plurality of chips attached on a first film is provided, and the chips on the first film are disposed respectively corresponding to a plurality of electrode patterns of a substrate. Then, a phosphor layer is respectively formed on at least one surface of each of the chips. Next, a second film is disposed on the phosphor layers, and the second film is opposite to the first film. Further, the first film is removed from the base surface of each of the chips. Then, the base surfaces of the chips are attached to the substrate. Afterward, each of the chips is electrically connected with the corresponding electrode pattern through a wire bonding. Finally, a packaging gel is provided to cover each of the chips, and the packaging gel is solidified.

Abstract: A light emitting device includes a leadframe, a light emitting unit, a transparent encapsulant, and a fluorescent colloid layer. The light emitting unit is disposed on the leadframe. The transparent encapsulant covers the light emitting unit, wherein the transparent encapsulant has a concave on which at least one reflective surface is disposed. The fluorescent colloid layer is disposed outside the transparent encapsulant, wherein a chamber is formed between the fluorescent colloid layer and the transparent encapsulant. The light generated by the light emitting unit is reflected by the reflective surface and guided to a side wall of the fluorescent colloid layer.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.

Abstract: A method of manufacturing a light emitting device comprises: depositing over substantially the entire surface of a LED wafer having a array of LEDs formed on a surface thereof a mixture of at least one phosphor and a polymer material, wherein the polymer material is transmissive to light generated by the LEDs and to light generated by the at least one phosphor material; using laser ablation to selectively make apertures in the phosphor/polymer material corresponding to electrode contact pads of each LED thereby enabling access to each electrode contact pad; and dividing the wafer into individual light emitting devices. The method can further comprise, prior to dividing the wafer, cutting slots in the phosphor/polymer material which are configured to pass between individual LEDs. The slots are configured such that a layer of phosphor/polymer material remains on the edges of each LED after division of the wafer into individual light emitting devices.

Abstract: Light-emitting device packages which may be manufactured using post-molding and with improved heat emission performance and optical quality, and methods of manufacturing the light-emitting device packages. The light-emitting device package includes: a heat dissipation pad; a light-emitting device formed on the heat dissipation pad; a pair of lead frames disposed to be spaced apart from each other at both sides of the light-emitting device and the heat dissipation pad; a molding member surrounding the side of the light-emitting device except for an emission surface of the light-emitting device; and bonding wires for electrically connecting the lead frames to the light-emitting device.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof; a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer; a first electrode structure connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer.

Abstract: A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.

Abstract: A semiconductor light emitting package includes a substrate, an encapsulating material, a semiconductor light emitting chip disposed on the substrate, wires; and an integrated glass-fluorescent powder compound light-emitting structure. The encapsulating material and the integrated glass-fluorescent powder compound light-emitting structure are packaged on the semiconductor light emitting chip, the integrated glass-fluorescent powder compound light-emitting structure is coated on the encapsulating material. The semiconductor light-emitting package has a large light-emitting area, high uniformity which can effectively avoid “halo” phenomenon, and long working life. The present invention also relates to a method for manufacturing semiconductor light emitting package, which can be implemented at low temperature and improve the reliability and the stability of the light-emitting property of the compound light-emitting structure.

Abstract: The present invention relates to an improved glued light core for a light-emitting diode (LED), which provides an optical lamp body integrally formed on an upper end of an LED lead frame. In particular, the optical lamp body is designed as a glued structure with minimal epoxy, to simplify a complicated packaging operation in a conventional manufacturing process, to directly fasten a crystal cup, a crystal cell and a conductive gold wire to the upper end of the lead frame by the epoxy, and to provide illumination comparable to that of general light core. Additionally, a light-emitting housing is made of polychloroprene or plastic resin which is able to be applied or injected outside the glued light core, such that a light source inside the glued light core emits light beams through the light-emitting housing to form collection or stray lights of a special light source with multiple variations. Thus, the manufacturing process and multiple applications of the LED can be greatly simplified.

Abstract: A light-emitting device package includes: a package body on which a mount portion and a terminal portion are disposed; a light-emitting device chip that is mounted on the mount portion; and a bonding wire that electrically connects an electrode of the light-emitting device chip and the terminal portion. The bonding wire includes a rising portion that rises from the light-emitting device chip to a loop peak, and an extended portion that connects the loop peak and the terminal portion. A first kink portion, which is bent in a direction intersecting a direction in which the rising portion rises, is disposed on the rising portion.

Abstract: A LED device includes a base structure having a receiving space, a light-emitting chip, an encapsulating structure, and a phosphor layer. The receiving space is defined by an inner bottom surface of the base structure and an inner side wall surrounding the inner bottom surface. The light-emitting chip is mounted on the bottom of the receiving space. The encapsulating structure is filled into the receiving space to cover the light-emitting chip. The phosphor layer is formed on the encapsulating structure. The dimension of the phosphor layer is more than the dimension of the receiving space and less than 1.5 times that of the receiving space, so as to mount on the top surface of the base structure.

Abstract: Provided is a light emitting device wherein a resin molded body having a circular or an oval recessed section at the center suppresses generation of cracks. A light emitting device (1) is provided with a light emitting element (2); a first resin molded body (10) having a plurality of outer surfaces (11), and a recessed section (10a) at the center; a first lead (20) and a second lead (30) electrically connected to the light emitting element (2); and a second resin molded body (40) applied in the recessed section (10a). The light emitting element (2) is place on the first lead (20), and the surface of the second resin molded resin (40) is permitted to be a light emitting surface. A gate notch (50) obtained by cutting a gate formed on the outer surface (11) of the first resin molded body (10) is formed on an extended line of a normal line on one point on a circular cross-section of the recessed section (10a) in the normal nine direction.

Abstract: Disclosed are various embodiments of an infrared proximity sensor package comprising an infrared transmitter die, an infrared receiver die, a housing comprising outer sidewalls, a first recess, a second recess and a partitioning divider disposed between the first and second recesses. The transmitter die is positioned in the first recess, the receiver die is positioned within the second recess, and at least the partitioning divider of the housing comprises liquid crystal polymer (LCP) such that infrared light internally-reflected within the housing in the direction of the partitioning divider is substantially attenuated or absorbed by the LCP contained therein.

Abstract: An encapsulating composition for a light emitting element, a light emitting diode (LED) and a liquid crystal display device (LCD) are provided. A silicone-cured product included as a main ingredient and a conductivity-providing agent having excellent compatibility and capable of providing superior conductivity can be used to significantly reduce the surface resistivity of the silicone-cured product. Therefore, the encapsulating composition for a light emitting element, the LED and the LCD can be useful in solving the problems regarding attachment of a foreign substance such as dust due to static electricity, and degradation of transparency since the composition has low surface resistivity when used as a semiconductor encapsulation material for an LED, and also in providing a cured product having excellent properties such as light resistance, heat resistance, durability and optical transparency.

Abstract: An encapsulation material and an electronic device, the encapsulation material including a resin, the resin including a first polysiloxane including hydrogen bonded with silicon (Si—H) at a terminal end thereof, and a second polysiloxane including an alkenyl group bonded with silicon (Si-Vi) at a terminal end thereof, a phosphor, and a density controlling agent, wherein a weight ratio of the density controlling agent to the phosphor is about 1.5:1 to about 10:1.

Abstract: An optoelectronic semiconductor component comprising: a main body (100) having a recess; (102), a first optoelectronic element (104) and a second optoelectronic element; (106) a surface structured element; (110) and a filling compound (112) embedding the first optoelectronic element (104) and the second optoelectronic element (106) in the recess, wherein the surface structured element configures a surface of the filling compound (112) such that at least two domed regions (114, 116, 118) of the surface are formed.

Abstract: A light emitting diode (LED) package and the manufacturing method thereof are provided. The LED package comprises a substrate, at least one LED die, a lens and an in-mold decoration film, wherein the LED die is fixed on the substrate; the lens is convexly molded on the substrate to encapsulate the LED die; and the in-mold decoration film has at least one phosphor layer disposed on the lens and a surface treatment layer disposed on the phosphor layer.

Abstract: A resin for an encapsulation material includes a first polysiloxane including hydrogen bound to silicon (Si—H) at its terminal end, and a second polysiloxane including an alkenyl group bound to silicon (Si-Vi) at its terminal end, wherein a ratio (Si—H/Si-Vi) of hydrogen bound to silicon (Si—H) in the first polysiloxane to the alkenyl group bound to silicon (Si-Vi) in the second polysiloxane is about 1 to about 1.

Abstract: A light emitting diode package and a fabrication method thereof are provided. The light emitting diode package comprises a lead frame, having a frame body and a conductive layer covering the frame body. A reflector has a first portion and a second portion sandwiching the lead frame, wherein the first portion has a depression to expose the lead frame, and a light emitting diode chip is disposed on the lead frame in the depression. The fabrication method comprises forming a frame body and forming a conductive layer covering the frame body to form a lead frame. A first portion and a second portion of a reflector are formed to sandwich the lead frame, wherein the first portion has a depression to expose the lead frame. A light emitting diode chip is disposed on the lead frame in the depression.

Abstract: A method of making a solid element device that includes a solid element, an element mount part on which the solid element is mounted and which has a thermal conductivity of not less than 100 W/mK, an external terminal provided separately from the element mount part and electrically connected to the solid element, and a glass sealing part directly contacting and covering the solid element for sealing the solid element, includes pressing a glass material at a temperature higher than a yield point of the glass material for forming the glass sealing part.

Abstract: An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. In other exemplary embodiments a second solvent is also included, and the composition has a viscosity substantially between about 100 cps and about 25,000 cps at about 25° C. In an exemplary embodiment, a composition comprises: a plurality of diodes or other two-terminal integrated circuits; one or more solvents comprising about 15% to 99.9% of any of N-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, 1-methoxy-2-propanol, N-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol, and mixtures thereof; a viscosity modifier comprising about 0.10% to 2.5% methoxy propyl methylcellulose resin or hydroxy propyl methylcellulose resin or mixtures thereof; and about 0.01% to 2.5% of a plurality of substantially optically transparent and chemically inert particles having a range of sizes between about 10 to about 50 microns.

Abstract: An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary apparatus comprises: a plurality of diodes; at least a trace amount of a first solvent; and a polymeric or resin film at least partially surrounding each diode of the plurality of diodes. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.

Abstract: A sensor for sensing pressure is disclosed. The sensor may be a pressure sensor for sensing pressure, or a tactile sensor for sensing tactile events through pressure measurement. In one aspect, the sensor includes at least one pressure sensor having at least one VCSEL on a substrate. It further includes a compressible sensor layer covering a top surface of the at least one VCSEL, and a reflecting element covering a top surface of the sensor layer. A method of manufacturing such a sensor is also disclosed.

Abstract: An LED package includes a base, an LED die arranged on the base, an encapsulation sealing the LED die, and a light wavelength converting layer arranged on a light path of the LED die. The light wavelength converting layer includes a plurality of first areas comprising red fluorescent powder, a plurality of second areas comprising green fluorescent powder and a plurality of third areas comprising blue fluorescent powder. The first, second and third areas are aligned along a first direction and a second direction perpendicular to the first direction. Each two neighboring areas on the first direction have different colors. Each two neighboring areas on the second direction also have different colors.

Abstract: In a chip-type LED according to an embodiment of the present invention, a first recess hole for mounting an LED chip and a second recess hole for connecting a fine metal wire are formed in an insulating substrate, a metal sheet serving as a first wiring pattern is formed at a portion that includes the first recess hole, a metal sheet serving as a second wiring pattern is formed at a portion that includes the second recess hole, an LED chip is mounted on the metal sheet within the first recess hole, the LED chip is electrically connected to the metal sheet within the second recess hole via a fine metal wire, the LED chip including the first recess hole and the fine metal wire including the second recess hole are encapsulated in a first transparent resin that contains a fluorescent material, a surface of the insulating substrate including the first transparent resin is encapsulated in a second transparent resin.

Abstract: An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Abstract: The present invention relates to an optical semiconductor device including: a substrate having mounted thereon an LED chip; an encapsulation resin layer embedding the LED chip; an inorganic high-heat conductive layer; and a wavelength conversion layer containing an inorganic phosphor powder, in which the encapsulation resin layer, the inorganic high-heat conductive layer and the wavelength conversion layer are laminated in this order on the substrate either directly or indirectly.

Abstract: A light emitting device is provided that includes a substrate, a light emitting unit formed on the substrate, and an encapsulation unit. The encapsulation unit may include a first region corresponding to the light emitting unit and a second region coalesced with the substrate. The encapsulation unit of the first region or a part of the encapsulation unit of the first region may have a positive curvature.

Abstract: A fingerprint input module includes at least one prism sheet, an image-capturing unit, and a planar light source. The prism sheet has a micro-prism array. The image-capturing unit has a lens. The planar light source is disposed between the prism sheet and the image-capturing unit, and has a through hole in optical alignment with the lens for passage of light from the micro-prism array to the lens.

Abstract: To provide glass with which a sealing treatment can be carried out at a temperature of at most 400° C. and which does not deteriorate or change in quality for a long time. Glass comprising, as represented by mol % based on oxides, from 27 to 33% of P2O5, from 50 to 70% of SnO, from 0 to 10% of ZnO, from 0.5 to 5% of CaO and from 0 to 5% of B2O3.

Abstract: The present invention provides a sealant for an optical semiconductor device which is less likely to reduce its luminance and is also less likely to change its color even used in an energized state in harsh environments of high temperature and high humidity. The sealant for an optical semiconductor device includes: a first organopolysiloxane not containing a hydrogen atom bound to a silicon atom, but containing an alkenyl group bound to a silicon atom and an aryl group bound to a silicon atom, a second organopolysiloxane containing a hydrogen atom bound to a silicon atom and an aryl group bound to a silicon atom, and a platinum-alkenyl complex. The platinum-alkenyl complex is a reaction product obtained by reacting chloroplatinic acid hexahydrate with not less than 6 equivalent of a bi- or more-functional alkenyl compound.

Abstract: To provide a mold release film for producing a light emitting diode by a mold, which is less susceptible to formation of pin holes or rupture and which is applicable to mass production of a light emitting diode by means of a mold having a plurality of cavities, and a process for producing a light emitting diode by means of such a mold release film. A mold release film to be disposed on the cavity surface of a mold to form a substantially hemispherical lens portion by encapsulating a light emitting element of a light emitting diode with an encapsulation resin, which release film has a thickness of from 16 to 175 ?m and a tensile rupture elongation of from 600 to 3,000% at 110° C. as measured in accordance with JIS K7127, and a process for producing a light emitting diode by means of such a mold release film.

Abstract: A light emitting device package includes a plurality of lead frames separated from one another; at least one light emitting device provided with a wire bonding pad attached to a lower surface thereof opposite an upper light emission surface thereof, and mounted on the lead frames such that the wire bonding pad is positioned in a space between the lead frames; a bonding wire electrically connecting the wire bonding pad to the lead frame through the space between the lead frames; and a mold part encapsulating the lead frames, the light emitting device and the bonding wire, and having a reflection groove formed in an upper surface thereof to expose the light emission surface therethrough and a pad groove formed in a bottom surface thereof to expose a portion of the lead frame so as to form a solder pad thereon.

Abstract: The present disclosure relates to an organic light emitting display device and a method for manufacturing the same.

Abstract: An LED package structure comprises a substrate, two electrodes arranged on the substrate, an LED chip arranged on the substrate and electrically connected to the electrodes, an encapsulation covering the LED chip, and a shell surrounding the substrate and the encapsulation. The shell includes walls, of a height which exceeds the thickness of the substrate and so functions as a reflector. A circuit structure connected to the electrodes is arranged on the bottom of the walls.

Abstract: A first interconnection is formed along a groove of a substrate and on a bottom surface of the groove, and has a first thickness. A second interconnection is electrically connected to the first interconnection and has a second thickness larger than the first thickness. An acceleration sensing unit is electrically connected to the second interconnection. A sealing unit has a portion opposed to the substrate with the first interconnection therebetween, and surrounds the second interconnection and the acceleration sensing unit on the substrate. A cap is arranged on the sealing unit to form a cavity on a region of the substrate surrounded by the sealing unit. Thereby, airtightness of the cavity can be ensured and also an electric resistance of the interconnection connected to the acceleration sensing unit can be reduced.

Abstract: An SMD diode holding structure includes a plastic housing and a plurality of metal holders. Two ends of the plastic housing from a function area and a notch. The metal holder has a base portion and a connecting pin portion. The top and bottom surfaces of the base portion are exposed to the function area and the notch. The top surface of one base portion in the function area is connected with an LED chip, and the bottom surface of another base portion in the notch is connected with the anti-ESD chip. The LED chip, the anti-ESD chip, and the base portion are connected with a conductive wire. The function area is covered with a first sealing compound, and the notch is covered with a second sealing compound. Light emitted from the LED chip is uniformly reflected in the function area, and the brightness is uniform.