Abstract: A radiation-emitting component includes a carrier, a semi-conductor chip arranged on the carrier, wherein the semi-conductor chip includes an active layer to generate electromagnetic radiation and a radiation exit surface, a first and a second contact structure for the electrical contacting of the semi-conductor chip, a first and a second contact layer, wherein the semi-conductor chip is electrically conductively connected to the first contact structure via the first, contact layer and to the second contact structure via the second contact layer, a passivation layer arranged on the semi-conductor chip.

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Abstract: A light emitting device is a light emitting device using light emitting elements and includes: a substrate; a resin frame provided circularly on the substrate; a resin wall provided on the substrate so as to partition an area surrounded by the resin frame into 2 zones; light-emitting sections (a first light-emitting section: blue LEDs+red fluorescent material, a second light-emitting section: blue LEDs+yellow fluorescent material) provided in the respective zones, each of which light-emitting sections includes at least one light emitting element; and first and second anode electrodes and a cathode electrode provided so that each of the light-emitting sections receives current via a corresponding anode electrode and the cathode electrode, the light-emitting sections emitting respective pieces of light each having at least one color, which respective pieces of light have different colors from each other, the first and second anode electrodes being electrically connected to the first and second light-emitting se

Abstract: The disclosure provides a dominant wavelength stabilized white light emitting device and a method for stabilizing dominant wavelength of a white-light light emitting device. The light emitting device includes light-emitting diode chips, a phosphor resin layer disposed above the diode chip, and an optical filter disposed above the resin with a gap interposed between the phosphor resin layer and the optical filter. The phosphor resin layer contains a phosphor that is excited by light of the first wavelengths to emit light of second wavelengths. The optical filter reflects light of wavelength shorter than the peak wavelength and transmitting light of the second wavelengths with a modulated transmittance in a range of the first wavelengths.

Abstract: A light emitted diode (LED) package structure and an LED package process are provided. The LED package structure comprises a carrier, a spacer, at least one LED chip, a junction coating, a plurality of phosphor particles, and an encapsulant. The spacer is disposed on the carrier and provided with a reflective layer covering a top surface of the spacer. The LED chip is disposed on the reflective layer and electrically connected to the carrier. The junction coating is disposed over the spacer and covers the LED chip. The phosphor particles are distributed within the junction coating. The encapsulant is disposed on the carrier and encapsulates the LED chip, the spacer and the junction coating. Uniform light output and high illuminating efficiency can be obtained by the phosphor particles uniformly distributed in the junction coating. The junction coating is formed by package level dispensing process to reduce the fabrication cost.

Abstract: Methods are disclosed including applying a layer of binder material onto an LED structure. A luminescent solution including an optical material suspended in a solution is atomized using a flow of pressurized gas, and the atomized luminescent solution is sprayed onto the LED structure including the layer of binder material using the flow of pressurized gas.

Abstract: A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

Abstract: The present invention relates to an encapsulation structure for light-emitting diode, which includes an encapsulation base, at least one light-emitting diode chip, a first encapsulation material and a second encapsulation material. The encapsulation base includes an encapsulation region, and the light-emitting diode chips are mounted on the encapsulation region. The first encapsulation material is disposed on the encapsulation region and overlays the light-emitting diode chips. The second encapsulation material is doped with a predetermined amount of phosphor (fluorescent powder), and the second encapsulation material is superposed on the first encapsulation material. Hence, according to the structure described above, the present invention effectively enables customization of products, and reduces the stockpiling of semi-finished products.

Abstract: The present invention provides a light emitting device which comprises a blue light emitting diode, and at least an orthosilicate based phosphor for emitting light ranging from a green to yellow regions and a nitride or oxynitride based phosphor for emitting light in a red region over the light emitting diode. Accordingly, since white light with a continuous spectrum ranging from green to red can be implemented, a light emitting device with improved color rendering can be provided, and the light emitting device can be used for a general illumination or a flash. Further, since the phosphors having stable chemical characteristics against their external environment such as moisture are employed, the stability in optical characteristics of the light emitting device can also be improved.

Abstract: The present invention has an object to provide a LED package having a means capable of precisely limiting a region in which a resin containing a phosphor is dotted on a member on which an LED chip is supported. To this end, an LED package according to the present invention comprises a package body having an inner space with an LED chip mounted therein, the inner space being open toward a light emission direction; a chip support member mounted to the inner space of the package body to support the LED chip; a phosphor resin member formed by dotting resin containing a phosphor onto the LED chip; and a region limitation means provided on the chip support member and defining a region in which the phosphor resin member is formed.

Abstract: An LED wafer with a growth substrate is attached to a carrier substrate by, for example, a heat-releasable adhesive so that the LED layers are sandwiched between the two substrates. The growth substrate is then removed, such as by laser lift-off. The exposed surface of the LED layers is then etched to improve light extraction. A preformed phosphor sheet, matched to the LEDs, is then affixed to the exposed LED layer. The phosphor sheet, LED layers, and, optionally, the carrier substrate are then diced to separate the LEDs. The LED dice are released from the carrier substrate by heat or other means, and the individual LED dice are mounted on a submount wafer using a pick-and-place machine. The submount wafer is then diced to produce individual LEDs. The active layer may generate blue light, and the blue light and phosphor light may generate white light having a predefined white point.

Abstract: A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

Abstract: A semiconductor light-emitting device having a substrate on which a semiconductor multilayer film is disposed, the semiconductor multilayer film having a layered structure in which a first conductive layer, a light-emitting layer and a second conductive layer are layered above the substrate from bottom to top in the stated order, and being divided into portions by grooves extending perpendicular to the substrate, each portion having a diode structure and serving as a light-emitting element 12, each light-emitting element 12 having a hole 22 in a central portion thereof in plan view, the hole 22 penetrating through the second conductive layer 18 and the light-emitting layer 16 and reaching the first conductive layer 14, and comprising: a first electrode 24 inserted in the hole 22 and having a columnar shape, one end thereof being connected to the first conductive layer 14 at the bottom of the hole 22, and the other end protruding from an opening of the hole 22; and a second electrode 26 formed on the second co

Abstract: The invention relates to a light source (1) comprising a light-emitting device (3) and a light recycling device (5), said light recycling device (5) is located in an optical path (7) of the light-emitting device (3). The light recycling device (5) comprises at least one light recycling member (9) for changing at least one physical property of light passing it and at least one thermally conductive member (10, 11) capable of conducting heat generated in the light recycling member (9), said thermally conductive member (10, 11) is in thermal contact with the light recycling member (9) and at least one heat sink (12). The invention further relates to a light corresponding recycling device (5).

Abstract: In at least one embodiment of the organic light-emitting component (10), the latter comprises a unipolar charge carrier balder layer (3), a first layer (1) and a second layer (2) which are applied to opposing sides of the charge carrier barrier layer (3) and are in each case formed of at least one organic material, and two ambipolar injection layers (4), which are applied to the sides of the first (1) and second layers (2) remote from the charge carrier barrier layer (3). Such an organic, light-emitting component (10) may be operated efficiently with alternating current.

Abstract: Provided is a white light emitting diode (LED) including a blue LED chip; and yellow, green, and red light emitting phosphors that are coated on the blue LED chip at a predetermined mixing ratio and converts light, emitted from the blue LED chip, into white light.

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

Abstract: A light source and method for fabricating the same are disclosed. The light source includes a die, a light conversion component, and a scattering ring. The die emits light of a first wavelength through a top surface of the die and one or more side surfaces of the die, and is bonded to a mounting substrate. The light conversion component converts light of the first wavelength to light of a second wavelength, the light conversion component having a bottom surface bonded to the top surface of the die. The light conversion component has lateral dimensions such that a space exists around the die, the space being bounded by the substrate and the light conversion component. The scattering ring is positioned in the space such that a portion of the light emitted from the side surfaces of the die is scattered into the light conversion component.

Abstract: A substrate for an LED assembly can have a plurality of cups formed therein. At least one cup can be formed within another cup. The cups can be co-axial with respect to one another, for example. A machined surface of the substrate can enhance reflectivity of the LED assembly. A transparent and/or non-global solder mask can enhance reflectivity of the LED assembly. A transparent ring can enhance reflectivity of the LED assembly. By enhancing reflectivity of the LED assembly, the brightness of the LED assembly can be increased. Brighter LED assemblies can be used in applications such as flashlights, displays, and general illumination.

Abstract: A light emitting device having an encapsulant with scattering features to tailor the spatial emission pattern and color temperature uniformity of the output profile. The encapsulant is formed with materials having light scattering properties. The concentration of these light scatterers is varied spatially within the encapsulant and/or on the surface of the encapsulant. The regions having a high density of scatterers are arranged in the encapsulant to interact with light entering the encapsulant over a desired range of source emission angles. By increasing the probability that light from a particular range of emission angles will experience at least one scattering event, both the intensity and color temperature profiles of the output light beam can be tuned.

Abstract: There is provided an organic light-emitting diode luminaire. The luminaire includes a patterned first electrode, a second electrode, and an electroluminescent layer therebetween. The electroluminescent layer includes: a first electroluminescent material having an emission color that is blue; a second electroluminescent material having an emission color that is green; and a third electroluminescent material having an emission color that is red. The additive mixing of all the emitted colors results in an overall emission of white light.

Abstract: A method is provided for producing a luminescence conversion element (4), in particular for an optoelectronic component. In the method a raw material (1) is provided, which is intended for further processing to yield the ceramic material and which contains luminescent material particles and a binder material. A blank is molded by injecting the raw material (1) into a closed mold (3). The blank is released from the mold (3). The binder material is removed from the blank. The blank is sintered to yield the luminescence conversion element (4), wherein the luminescent material particles are bonded together and/or with further particles of the raw material to yield the ceramic material. A luminescence conversion element and an optoelectronic component are additionally provided.

Abstract: [Problem] A semiconductor light-emitting device, which does not suffer from color unevenness of the light taken out of a sealing material even when a phosphor is used therein and enables reduction of the production cost is provided. [Means for Solving] Because semiconductor light-emitting device (1) comprises a semiconductor light-emitting element (4) and a phosphor (5) sealing the semiconductor light-emitting element (4) and having a matrix composed of a glass and a luminescence center contained in the matrix, by directly sealing the semiconductor light-emitting element (4) with the phosphor (5), color unevenness of light emitted from the device is reduced and any sealing material other than the phosphor (5) becomes unnecessary. Since a process of mixing the phosphor (5) and any other sealing material is not required, the production cost can be reduced.

Abstract: A light emitting device is provided, comprising a light emitting diode 10, where the light emitting surface 11 thereof is bound to an optical element 13 by means of a bonding material 12 comprising a phosphate glass or an oxide glass having Tg<250° C. In operation of the device, when the temperature approaches or exceeds Tg of the bonding material, the bonding material gets fluidic and can thus relax any thermally induced stresses between the light emitting diode and the optical element.

Abstract: The present invention relates to a method for forming a package structure for a light emitting diode (LED) and the LED package structure thereof. By employing the same sawing process to cut through the trenches of the leadframe, the package units are singulated and different lead portions are simultaneously separated from each other in each package unit. Therefore, the overflow issues of the encapsulant can be avoided without using extra taping process.

Abstract: Phosphor compositions, white phosphor compositions, methods of making white phosphor compositions, tinted white phosphor compositions, methods of making tinted white phosphor compositions, LEDs, methods of making LEDs, light bulb structures, paints including phosphor compositions, polymer compositions including phosphor compositions, ceramics including phosphor compositions, and the like are provided.

Abstract: The present invention discloses a white light-emitting diode based on In—Ga—N nitride heterojunction is characterized by that the light-emitting diode has primary blue light emission of a specific wavelength and a light conversion layer so as to generate white light. Further, the present invention also discloses a light conversion layer and its fluorine oxygen garnet phosphor powder.

Abstract: The present invention discloses an organic light-emitting diode (OLED) device with high color rendering comprising a base plate, a first conductive layer, a plurality of white light emitting layers, and a second conductive layer, wherein the spectra of the white light emitting layers possess characteristics of complementarities so as to enhance the color rendering of the emitted white light, and at least one carrier regulating layer is selectively disposed between every two white light emitting layers so as to increase the emitting efficiency and color rendering.

Abstract: A light emitting apparatus includes one or more light emitting semiconductors, and an elongated lens encapsulating the one or more light emitting semiconductors. The elongated lens comprises an exterior surface having a photoluminescent material thereon.

Abstract: A method of manufacturing an elongated lens for a light emitting apparatus includes forming an elongated lens having an exterior surface, and applying a photoluminescent material to the exterior surface of the lens.

Abstract: A light-emitting device includes a base and a light-emitting element that is disposed on the base. The light-emitting element is made up of a plurality of semiconductor layers including a light-emitting layer, and at the same time, is covered with a wavelength converting portion that includes a wavelength converting material. The light-emitting layer emits primary light, and the wavelength converting material absorbs part of the primary light and emits secondary light. The luminance of the primary light emitted from the edge portion of the light extraction surface of the light-emitting device is higher than the luminance of the primary light emitted from the inner region located inside the edge portion, and the ratio of the primary light and the secondary light that are emitted from a light extraction surface of the wavelength converting portion is substantially uniform across the light extraction surface of the wavelength converting portion.

Abstract: There is provided a white light emitting device that prevents a red phosphor from resorbing wavelength-converted light to improve white luminous efficiency. A white light emitting device according to an aspect of the invention includes a package body; at least two LED chips mounted to the package body and emitting excitation light; and a molding unit including phosphors, absorbing the excitation light and emitting wavelength-converted light, in regions of the molding unit divided according to the LED chips and molding the LED chips. According to the aspect of the invention, since the phosphor for converted red light can be prevented from resorbing light generated from other regions of the molding unit, the white light emitting device that can improve white luminous efficiency or control color rendering and color temperature by adjusting a mixing ratio of converted light for white light emission.

Abstract: Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.

Abstract: A mount for a semiconductor device includes a carrier, at least two metal leads disposed on a bottom surface of the carrier, and a cavity extending through a thickness of the carrier to expose a portion of the top surfaces of the metal leads. A semiconductor light emitting device is positioned in the cavity and is electrically and physically connected to the metal leads. The carrier may be, for example, silicon, and the leads may be multilayer structures, for example a thin gold layer connected to a thick copper layer.

Abstract: Semiconductor light emitting device packaging methods include fabricating a substrate configured to mount a semiconductor light emitting device thereon. The substrate may include a cavity configured to mount the semiconductor light emitting device therein. The semiconductor light emitting device is mounted on the substrate and electrically connected to a contact portion of the substrate. The substrate is liquid injection molded to form an optical element bonded to the substrate over the semiconductor light emitting device. Liquid injection molding may be preceded by applying a soft resin on the electrically connected semiconductor light emitting device in the cavity. Semiconductor light emitting device substrate strips are also provided.

Abstract: In a fluorescer solution, a plurality of types of fluorescent particles are contained in a resin liquid. Average particle sizes of these fluorescent particles decrease as densities of the types increase. In other words, average settling rates vs of the types of the fluorescent particles ascertained by v s = D p 2 × ( ? p - ? f ) × g 18 × ? are equal to each other, where Dp is an average particle size of each of the types of fluorescent particles, pp is a density of each of the types of fluorescent particles, pf is a density of the resin liquid, ? is a viscosity of the resin liquid, g is the acceleration due to gravity, and vs is an average settling rate of each of the types of fluorescent particles.

Abstract: There is provided a light emitting device package including: a package body providing a chip mounting area and including first and second lead terminals; an LED chip mounted on the chip mounting area and electrically connected to the first and second lead terminals; a groove portion disposed around the LED chip in the chip mounting area; and a wavelength conversion portion formed of a resin containing a wavelength conversion material with which to enclose the LED chip and having an outer shape defined by the groove portion.

Abstract: The first wavelength converting member, the light emitting element, and the second wavelength converting member are disposed in this order toward the opening of the recess portion on the bottom surface of the housing member through a light transmissive supporting member, and spaced away from the side surface of the recess portion. The first wavelength converting member is a plate shape member made of a composite of an inorganic binder made of an inorganic material and a fluorescent material. A light scattering surface is formed on at least a portion of the side surface of the recess portion, which is irradiated with the light emitted from the side surfaces of the wavelength converting member in parallel with the principal surface of the first wavelength converting member.

Abstract: A method of transferring a uniform phosphor layer on an article and a light-emitting structure having a uniform phosphor layer. The method includes disposing a surface of the article in a proximity of a carrier having the uniform phosphor layer on a surface thereon, and causing the uniform phosphor layer to be secured to the surface of the article. Therefore, the uniform phosphor layer is secured to the articles according to a contour of the article.

Abstract: The present invention relates to a light emitting diode package and a method of fabricating the same capable of uniformly distributing a fluorescent substance in a molding member by including a light emitting diode chip on a package substrate and the molding member having a molding resin, a fluorescent substance and nano particles, which is arranged on the package substrate, with covering the light emitting diode chip.

Abstract: There is provided a method for preparing a ?-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a ?-SiAlON phosphor represented by Formula: Si(6-x)AlxOyN(8-y):Lnz (wherein, Ln is a rare earth element, and the following requirements are satisfied: 0<x?4.2, 0<y?4.2, and 0<z?1.0) includes: mixing starting materials to prepare a raw material mixture; and heating the raw material mixture in a nitrogen-containing atmospheric gas, wherein the starting materials includes a host raw material including a silicon raw material including metallic silicon, and at least one aluminum raw material selected from the group consisting of metallic aluminum and aluminum compound, and at least activator raw material selected from the rare earth elements for activating the host raw material.

Abstract: A semiconductor light emitting device capable of improving the light extraction efficiency while preventing deterioration of the light emission characteristic with time and a semiconductor light emitting device assembly including the semiconductor light emitting device are provided. The semiconductor light emitting device includes a semiconductor light emitting element containing a metal element, a cap portion formed from a material which contains a sulfur or halogen element and which is capable of transmitting the light from the semiconductor light emitting element, and a shielding film which is disposed between the semiconductor light emitting element and the cap portion, which transmits the light from the semiconductor light emitting element to the cap portion, and which separates the semiconductor light emitting element side and the cap portion side.

Abstract: The present invention relates to light diffusion type light emitting diodes, more particularly, to a light emitting device having a large divergence angle by widely spreading an emitted light from a single color to a white color and a method thereof. The light emitting diode including the encapsulating layer according to the present invention is characterized by including at least two materials with different characteristics. According to the present invention, an encapsulating material for light emitting diode is mixed with at least two materials with a different polarity or a refractive index to easily form a light emitting diode. In addition, the light emitting diode die is bonded on the bottom surface of a cup, and an encapsulating material and microspheres are dispersed in the vicinity and upper portion of the light emitting diode and the entire light emitting diode, therefore the light emitting diode has a large and uniform divergence angle due to a light uniformly scattered and refracted.

Abstract: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition elements. The dopant ions absorb some or all of the light from the LED's active layer, pumping the dopant ion electrons to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green, blue and UV light, such that the LED emits green, blue, red and UV light which combines to create white light.

Abstract: The present invention provides a multichip LED and method of manufacture in which white light is produced. Specifically, a plurality of electrically interconnected LED chips (e.g., interconnected via red metal wire) is selected for conversion of light to white light. In a typical embodiment, the LED chips comprise: a blue LED chip, a red LED chip, a green LED chip, and a target LED chip whose light output is converted to white light. A wavelength of a light output by one or more of the plurality of chips will be measured. Based on the wavelength measurement, a conformal coating is applied to the one or more of the LED chips. The conformal coating has a phosphor ratio that is based on the wavelength. Moreover, the phosphor ratio is comprised of at least one of the following colors: yellow, green, or red. Using the conformal coating the light output of the target LED is then converted to white light.

Abstract: A light emitting device package is provided which may prevent a Zener element mounted on an electrode from being positioned on an inclined plane of a cavity. The light emitting device package may include a light emitting device mounted on a first electrode, a Zener element mounted on a second electrode, and a body having cavity inclined planes that form a cavity on the first and second electrodes. The cavity inclined planes may include a first cavity inclined plane adjacent to the Zener element. The first cavity inclined plane may include an inclined plane forming a first inclination angle with respect to the second electrode and an interfacing plane forming a second inclination angle with respect to the second electrode, the second inclination angle being different from the first inclination angle.

Abstract: A light-emitting device includes a base and a light-emitting element that is disposed on the base. The light-emitting element is made up of a plurality of semiconductor layers including a light-emitting layer, and at the same time, is covered with a wavelength converting portion that includes a wavelength converting material. The light-emitting layer emits primary light, and the wavelength converting material absorbs part of the primary light and emits secondary light. The luminance of the primary light emitted from the edge portion of the light extraction surface of the light-emitting device is higher than the luminance of the primary light emitted from the inner region located inside the edge portion, and the ratio of the primary light and the secondary light that are emitted from a light extraction surface of the wavelength converting portion is substantially uniform across the light extraction surface of the wavelength converting portion.

Abstract: A method for creating an improved signal light is disclosed. For example, the improved signal light includes a housing, one or more first type of light emitting diodes (LEDs) emitting a light energy having a first dominant wavelength deployed in the housing, one or more second type of LEDs emitting a light energy having a second dominant wavelength deployed in the housing, a filter and a mixer. The filter may filter the light energy of the one or more second type of LEDs such that only a third dominant wavelength passes from the one or more second type of LEDs. The mixer may mix the light energy having the first dominant wavelength and the filtered light energy having the third dominant wavelength to form a light energy having a desired fourth dominant wavelength.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: According to one embodiment, a light emitting device includes a stacked body, a p-side and n-side electrodes, an insulating film, a p-side extraction electrode, an n-side extraction electrode, a resin layer and a phosphor layer. The stacked body has a first and a second surface opposite to each other and includes a light emitting layer. A p-side and an n-side electrode are provided on the second surface. An insulating film has openings to which the p-side and n-side electrodes are exposed. A p-side extraction electrode includes a p-side seed metal and a p-side metal wiring layer. An n-side extraction electrode includes an n-side seed metal and an n-side metal wiring layer. A resin layer is filled around the p-side and n-side extraction electrodes, and a phosphor layer is provided on a side of the first surface. Emission light from the light emitting layer is emitted through the first surface.