Abstract: The invention provides a liquid fluorescent composition. The liquid fluorescent composition includes at least (a) 0.001-2 parts by weight of a fluorescent material; and (b) 100 parts by weight of a cyclic solvent having a boiling point above 100° C. The invention also provides a light emitting device containing the above liquid fluorescent composition.

Abstract: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the following equation (1) and an average particle diameter of 12 ?m or more. (M1?x1Eux1)3?ySi13?zAl3+zO2+uN21?w??(1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x1, y, z, u, and w satisfy the following relationship. 0<x1?1, ?0.1?y?0.15, ?1?z?1, ?1<u?w?1.

Abstract: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the following equation (1) and an average particle diameter of 12 ?m or more. (M1?x1Eux1)3?ySi13?zAl3+zO2+uN21?w??(1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x1, y, z, u, and w satisfy the following relationship. 0<x1<1, ?0.1<y<0.3, ?3<z?1, ?3<u?w?1.

Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Abstract: A method for manufacturing light emitting device is revealed. Firstly, provide a substrate. Then arrange a light emitting unit on the substrate. Next form at least one electrode and arrange at least one protective layer on the electrode. The protective layer is to prevent a phosphor layer following formed on the light emitting unit from covering the electrode. After forming the phosphor layer, flatten the phosphor layer and the protective layer. That means to remove part of the phosphor layer over the protective layer and the protective layer. Thus the electrode is not affected by the phosphor layer and conductivity of the electrode is improved to resolve phosphor thickness and uniformity problems of the light emitting device. Therefore, the thickness of the light emitting device with LED is effectively reduced and stability of white color temperature control is significantly improved.

Abstract: A red-emitting luminescent material that belongs to the class of nitridosilicates and is doped with at least one activator D, in particular Eu, wherein the material is a modified D-doped alkaline earth nitridosilicate M2Si5N8, where M=one or more elements belonging to the group Sr, Ca, Ba, with the nitridosilicate having been stabilized by an oxidic or oxinitridic—in particular alkaline earth—phase

Abstract: A light emitting device, which has: a light emitting element; a package that comprises a concavity for holding the light emitting element, and that has on its side wall where the concavity is integrally formed a light reflector for reflecting light from the light emitting element and a light transmitter for transmitting light from the light emitting element to the outside.

Abstract: Provided are a light-emitting tube and lamp that can maintain a high lamp efficiency even if the lamp power fluctuate. The light-emitting tube (3) comprises a heremetically sealed glass tube (19), and electrodes (17, 18) are disposed at both ends (13, 15) of said glass tube. The glass tube (19) has a bulging part (37) in a center area that roughly corresponds to the center of the interelectrode region between the filament coils (25, 26) at the electrodes (17, 18). When the light-emitting tube is lit at a rated lamp power, the lowest-temperature point is in an end region outside of the interelectrode region, and when lit at a prescribed lamp power below the rated lamp power, said lowest-temperature point is in the bulging part (37). The lamp comprises the abovementioned light-emitting tube (3) and a socket that electrically connects to the electrodes (17, 18) inside the light-emitting tube (3).

Abstract: The invention relates to an improved red light emitting material of the formula MLi2?yMgySi2?x?yAx+yN4?xOx:RE. (M=alkaline earth element, A=Al, Ga, B). This material crystallizes in a cubic structure type, making it useful for many applications.

Abstract: Provided are a phosphor, a phosphor manufacturing method, and a white light emitting device. The phosphor is represented as a chemical formula of aMO-bAlN-cSi3N4, which uses light having a peak wavelength in a wavelength band of about 350 nm to about 480 nm as an excitation source to emit visible light having a peak wavelength in a wavelength band of about 480 nm to about 680 nm. (where M is one selected from alkaline earth metals (0.2?a/(a+b)?0.9, 0.05?b(b+c)0.85, 0.4?c/(c+a)?0.

Abstract: Embodiments disclosed herein provide packaged LED devices in which the majority of the emitted light comes out the top of each LED chip with very little side emissions. Because light only comes out from the top, phosphor deposition and color temperature control can be significantly simplified. A package LED may include a housing positioned on a supporting submount, sized and dimensioned to accommodate a single LED chip or an array of LED chips. The LED chip(s) may be attached to the submount utilizing the Gold-to-Gold Interconnect (GGI) process or solder-based approaches. In some embodiments, phosphor may be deposited on top of the LED chip(s) or sandwiched between glass plates on top of the LED chip(s). The phosphor layer may be inside or on top of the housing and be secured to the housing utilizing an adhesive. The housing may be adhered to the submount utilizing a thermal epoxy.

Abstract: The present invention relates to a method for manufacturing a light emitting diode (LED) chip for a chip on board and a method for manufacturing an LED light source module in a chip on board fashion. The method of the present invention includes forming a plurality of LED chips on a wafer, molding a region of each LED chip, cutting the wafer into each LED chip, and testing each LED chip for operating characteristics.

Abstract: A radiation emitting device includes a radiation emitting functional layer that emits a primary radiation, and a radiation conversion material that is arranged in the radiation path of the radiation emitting functional layer and converts the primary radiation at least partially into a radiation of greater wavelength.

Abstract: Light emitting structures are disclosed that can include a semiconductor light emitting diode (LED) that includes a p-n junction active layer. A first layer can include a binder material having a thickness that is less than about 1000 ?m, wherein the first layer is directly on the LED. A second layer can include phosphor particles, where the second layer can have a thickness that is less than about 1000 ?m and can be directly on the first layer so that the first layer is between the LED and the second layer.

Abstract: An optoelectronic component comprises an organic layer sequence (1), which emits an electromagnetic radiation (15) having a first wavelength spectrum during operation, and also a dielectric layer sequence (2) and a wavelength conversion region (3) in the beam path of the electromagnetic radiation (15) emitted by the organic layer sequence (1). The wavelength conversion region (3) is configured to convert at least partially electromagnetic radiation having the first wavelength spectrum into an electromagnetic radiation (16) having a second wavelength spectrum. The dielectric layer sequence (2) is arranged in the beam path of the electromagnetic radiation (15) emitted by the organic layer sequence between the organic layer sequence (1) and the wavelength conversion region (3) and is at least partially opaque to an electromagnetic radiation having a third wavelength spectrum, which corresponds to at least one part of the second wavelength spectrum.

Abstract: A method of coating a light emitting device is provided. The method includes preparing a plurality of light emitting devices. The plurality of light emitting devices are coated with a first photocurable liquid. First light is selectively exposed to the first photocurable liquid to form a first coating layer on at least a partial region of a surface of each of the plurality of light emitting devices. The plurality of light emitting devices on which the first coating layer is formed are coated with a second photocurable liquid. Second light is selectively exposed to the second photocurable liquid to form a second coating layer on at least a partial region of the surface of each of the plurality of light emitting devices or a surface of the first coating layer. The first coating layer corresponds to the cured first photocurable liquid, while the second coating layer corresponds to the cured second photocurable liquid.

Abstract: A light emitting diode includes a first illumination region, a second illumination region, and the third illumination, wherein a first fluorescent conversion layer and a second fluorescent conversion layer cover the first illumination region and the second illumination region, respectively. The fluorescent conversion layers can convert lights from the illumination regions to other lights with different wavelengths whereby the light emitting diode generates light with multiple wavelengths.

Abstract: A light-emitting device includes a circuit board to which external electric power is supplied, a light emitting diode that is electrically connected onto the circuit board and emits light based on electric power from the circuit board, a housing provided on the circuit board so as to surround the light emitting diode and so that the upper end portion of the housing is positioned above the upper end portion of the light emitting diode, and a fluorescent laminate provided on the housing. The fluorescent laminate includes a first fluorescent layer that emits fluorescent light and a second fluorescent layer that emits fluorescent light having a wavelength that is longer than that of the first fluorescent layer. The second fluorescent layer is disposed on the housing and the first fluorescent layer is laminated on the second fluorescent layer.

Abstract: An organic light-emitting diode includes an organic light-emitting layer located between a transparent electrode and one other electrode on a substrate. In some embodiments at least one of the transparent electrode and the other electrode has two layers. The two layers include a structured layer, which is a charge carrier injection layer, and a conductive second layer into which the first layer is embedded. In some embodiments the organic light-emitting layer includes a structured charge carrier blocking layer.

Abstract: A method for manufacturing a light emitting device includes: forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate; forming a dielectric film on a second surface side opposite to the first surface of the multilayer body, the dielectric film having a first and second openings on a p-side electrode and an n-side electrode provided on the second surface; forming a seed metal on the dielectric film and an exposed surface of the first and second openings; forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal; separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer; and forming a resin in a space from which the seed metal is removed.

Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

Abstract: A composite substrate for the formation of a light-emitting device, ensuring that a high-quality nitride-based light-emitting diode can be easily formed on its top surface and the obtained substrate-attached light-emitting diode functions as a light-emitting device capable of emitting light for an arbitrary color such as white, is provided.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located on at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, the chip mounted on the base board and a transparent plate disposed on the wavelength converting layer including a spacer and a phosphor having a high density. The wavelength converting layer can be formed in a thin uniform thickness between the transparent plate and a top surface of the chip using the spacer so as to extend toward the transparent plate. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the thin wavelength converting layer including the phosphor having a high density, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.

Abstract: A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode.

Abstract: A lighting device, comprising a solid state light emitter and a removable encapsulant element. A lighting device element, comprising a solid state light emitter and an encapsulant holding element configured to releasably hold a removable encapsulant element. A lighting device component, comprising a removable encapsulant element. A method, comprising removing a first removable encapsulant element from a lighting device that comprises at least a first solid state light emitter and inserting a second removable encapsulant element into the lighting device. An encapsulant element comprising a substantially transparent first material and a luminescent material within the first material.

Abstract: A method for producing a light-emitting diode device includes a step of preparing a sealing layer by sealing in a light-emitting diode with a sealing material; a step of preparing a fluorescent layer by allowing a phosphor-containing resin composition containing phosphor and silicone resin to reach its B-stage; and a step of bonding the fluorescent layer to the surface of the sealing layer.

Abstract: Provided are nanocomposites and a light emitting device package including the same. The nanocomposites include nanoparticles, and silicon compounds bonded to surfaces of the nanoparticles and expressed by a specific chemical formula. The nanocomposites can be dispersed evenly in various matrices without the nanoparticles being agglutinated.

Abstract: An LED light source (10) comprises a ceramic substrate (20) with first and second opposed surfaces (30, 40). Pockets (50) are formed in the first surface (30) and each of the pockets includes a bottom (60) and a sidewall or sidewalls (70). A final electrical contact (105) comprised of a first electrically conductive material (57) with a coating of a second electrically conductive material (100) thereover is positioned in each of the pockets (50). An LED (110) is positioned in each of the pockets (50) and affixed to the electrical contact (105) and electrical connections (120), preferably in form of wire bonds, join the LEDs, the electrical connections (120) extending from a first LED (110) to an adjacent electrical contact (105). The ceramic substrate (20) is formed by injection molding a ceramic material and binder to form a green substrate (12) and subsequently sintering the green substrate to form the substrate (20).

Abstract: Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles (1) each of which is a ?-type SiAlON represented by a general formula: EuaSibAlcOdNe, where 0.005?a?0.4, b+c=12, d+e=16, wherein a mean value of a value obtained by dividing a longer particle diameter by a shorter particle diameter is not greater than 1.75. Also provided are a light emitting apparatus (11) using the phosphor particle group in a light converter (13), and a liquid crystal display television using the light emitting apparatus (11). With these, a high-efficiency and stable light emitting apparatus using a ?-type SiAlON, and a phosphor particle group therefor are provided.

Abstract: An LED package includes a substrate, an LED chip, a bounding dam, and a first encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. The LED chip is mounted on the first surface of the substrate. The bounding dam is formed on the first surface of the substrate and surrounds the LED chip. The bounding dam and the substrate cooperatively define a receiving space. The bounding dam is made of thermoset resin. The first encapsulation is formed in the receiving space and encloses the LED chip.

Abstract: The invention relates to a light emitting diode (LED) lighting device that is comprised of a plurality of LED components and is characterized by the mixture of; a first group of light source provided by blue LEDs mixed with luminescence conversion element and the blue light has a dominant wavelength in the range from 430 nm to 460 nm and the luminescence conversion element absorbs a portion of this blue light and converts to a secondary light have a peak wavelength in the range of 520 nm to 545 nm; a second group of light source provided by LEDs with dominant wavelength in the range of 600 nm to 610 nm and a third group of light source provided by LEDs with dominant wavelength in the range of 615 nm to 625 nm to produce mixture of light that has good color re-producibility.

Abstract: A light emitting diode device includes: at least one light emitting diode chip, which includes a semiconductor unit, two electrodes that are disposed on an electrode-mounting surface of the semiconductor unit, a light-transmissive insulating layer that is disposed on the electrode-mounting surface and that has two via holes, a reflective metal layer disposed on a portion of the light-transmissive insulating layer, a protective insulating layer that is disposed on the reflective metal layer, a conductor-receiving insulating layer that has two conductor-receiving holes respectively in communication with the via holes, and two conductor units that are formed respectively in the conductor-receiving holes; and a light-transmissive envelope layer that covers a surface of the light emitting diode chip opposite to the electrode-mounting surface, that extends to cover outer lateral surfaces of the light emitting diode chip, and that is doped with a fluorescence powder.

Abstract: Disclosed is a light emitting device package including a package body provided with a first lead frame and a second lead frame, a light emitting diode electrically connected to the first lead frame and the second lead frame, a first light transfer layer surrounding the light emitting diode, the first light transfer layer made of oxide, and a second light transfer layer disposed on the first light transfer layer to change a wavelength of light transferred from the first light transfer layer, wherein the interface between the first light transfer layer and the second light transfer layer has a roughness.

Abstract: A light emitter device, package, or lamp that comprises and light emitter and a light transmission control material to mask the appearance of at least the light emitter. In one embodiment, a light emitting diode (LED) based lamp is disclosed, comprising an LED light source. A phosphor is arranged remote to the light source such that light emitted from the light source passes through this phosphor and is converted by this phosphor. A light transmission control material is applied at least partially outside the LED light source and the phosphor to reversibly mask the appearance of the LED light source and the phosphor. The light transmission control material is less masking when the LED light source is active. A method for masking the appearance of inactive light emitters is also disclosed that comprising providing at least one light emitter.

Abstract: In the present invention, provided is a phosphor member capable of improving a yield and an extraction rate, in addition to high environmental tolerance, high heat resistance, high durability and a high color rendering property, by which variations of color and an amount of light are reduced, and also provided are a method of manufacturing the phosphor member and an illuminating device. Disclosed is a phosphor member prepared separately from an LED light source constituting a white illuminating device, wherein the phosphor member possesses phosphor particles and an inorganic layer having been subjected to coating and a heat treatment.

Abstract: Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at least some the plurality of LEDs so that at least some light from the covered LEDs passes through the single crystalline phosphor and is converted. The LED chips can then be singulated from the wafer to provide LED chips each having a portion of said single crystalline phosphor to convert LED light.

Abstract: A light source includes a substrate, a light emitting diode on the substrate, and a plate supporting member attached to the substrate and surrounding the light emitting diode to form a cavity. In addition, the light source includes a plate on the plate supporting member such that a distance between the plate and the substrate is approximately less than or equal to 1 mm. Furthermore, the light source includes a phosphor layer on the plate opposite the cavity.

Abstract: The present invention provides a LED package assembly and a backlight module. The LED package assembly provides three adjacent individual LED package structures separated from each other, for generating red light, green light and blue light, respectively, all of which are mixed with each other to form white light. The foregoing design can ensure that each color light can not be absorbed or scattered by other color fluorescent powders, so that it is advantageous to individually control each color, enhance the luminous efficiency of each color light and expand the color gamut of white light.

Abstract: A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.

Abstract: A component for a light-emitting device includes a fluorescent layer that is capable of emitting fluorescent light and a housing that is connected to the fluorescent layer for housing a light-emitting diode.

Abstract: A light emitting device includes a light emitting structure comprising a first semiconductor layer, an active layer and a second semiconductor layer, with an roughness formed in a surface of the first semiconductor layer; a phosphor layer arranged on the first semiconductor layer; and an adhesive activation layer arranged between the first semiconductor layer and the phosphor layer, wherein the adhesive activation layer fills a concave part of the roughness and a boundary surface between the adhesive activation layer and the phosphor layer is level.

Abstract: A light emitting diode package includes a metal thin film with a first surface and a second surface opposite to the first surface. The metal thin film further defines a first part and a second part electrically insulated from the first part. A light emitting diode die is formed on the first part of the metal thin film. The light emitting diode die includes a first electrode and a second electrode. The light emitting diode die is sealed within a glass encapsulation and the second surface of the metal thin film is exposed to the outside of the glass encapsulation for electrically connecting with an external power.

Abstract: A light-emitting semiconductor device includes a lead frame having lead electrodes, a reflector arranged with the lead frame, and a light-emitting semiconductor chip accommodated in the reflector and having electrodes connected to the lead electrodes by a flip-chip bonding method, wherein: a gap between the lead frame and the light-emitting semiconductor chip is filled with a cured underfill material, and a cured silicon oxide film of 0.05 to 10 ?m thickness is formed covering surfaces of the light-emitting semiconductor chip and reflector.

Abstract: A semiconductor light-emitting device according to the present invention is a semiconductor light-emitting device 10 including a solid-state light-emitting element 11 and a wavelength converter 12 that converts primary light emitted by the solid-state light-emitting element 11 into light having a longer wavelength, wherein the wavelength converter 12 includes a wavelength converting layer 12a made from a translucent inorganic formed body containing phosphors, and a binder layer 12b; the wavelength converter 12 is disposed on a main light extraction surface 11a of the solid-state light-emitting element 11; and the binder layer 12b is disposed along an emission direction of light emitted from the main light extraction surface 11a.

Abstract: The present invention relates to a phosphor represented by the following general formula (I), comprising: a composite oxide containing a divalent and trivalent metal elements as a host crystal; and at least Ce as an activator element in said host crystal, wherein the phosphor has a maximum emission peak in a wavelength range of from 485 nm to 555 nm in the emission spectrum at room temperature: M1aM2bM3cOd??(I) wherein M1 represents an activator element containing at least Ce; M2 represents a divalent metal element; M3 represents a trivalent metal element; a is a number within a range of 0.0001?a?0.2; b is a number within a range of 0.8?b?1.2; c is a number within a range of 1.6?c?2.4; and d is a number within a range of 3.2?d?4.8. Further, a light emitting device comprising said phosphor and a display and a lighting system having said light emitting device as a light source are disclosed.

Abstract: A light emitting device includes a substrate, a light emitting element, an additional light emitting element, a light reflecting resin member, an electrically conductive wire, an additional electrically conductive wire, and a sealing member. The substrate is provided with a conductor wiring. The light emitting element is mounted on the substrate. The electrically conductive wire electrically connects the conductor wiring and the light emitting element with at least a part of the electrically conductive wire being embedded in the light reflecting resin member. The additional electrically conductive wire electrically connects the light emitting element and the additional light emitting element, with the additional electrically conductive wire not being in contact with the light reflecting resin member. The sealing member is disposed in a region surrounded by the light reflecting resin member to cover the light emitting element.

Abstract: Methods and systems for coating of semiconductor devices using droplets of wavelength conversion or phosphor particles in a liquid medium. A plurality of nozzles delivers a controlled amount of the matrix material to the surface of the semiconductor device, with each of said nozzles having an opening for the matrix material to pass. The opening has a diameter wherein the diameter of the phosphor particles is less than or approximately equal to one half the diameter of the opening. The phosphor particles are also substantially spherical or rounded. The nozzles are typically arranged on a print head that utilizes jet printing techniques to cover the semiconductor device with a layer of the matrix material. The methods and systems are particularly applicable to covering LEDs with a layer of phosphor materials.

Abstract: The invention provides an illumination device comprising a light source and a transmissive arrangement. The light source is arranged to generate light source light and comprises a light emitting device (LED), arranged to generate LED light and a carrier comprising a first luminescent material. The carrier is in contact with the LED and the first luminescent material is arranged to convert at least part of the LED light into first luminescent material light. The transmissive arrangement of a second luminescent material is arranged remote from the light source and is arranged to convert at least part of the LED light or at least part of the first luminescent material light and/or at least part of the LED light. The invention overcomes current limitations of remote luminescent material systems in spot lighting.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.

Abstract: Solid state light emitting devices and/or solid state lighting devices use three or more phosphors excited by energy from a solid state source. The phosphors are selected and included in proportions such that the visible light output of such a device exhibits a radiation spectrum that approximates a black body radiation spectrum for the rated color temperature for the device, over at least a predetermined portion of the visible light spectrum.