Abstract: A semiconductor light-emitting device according to an embodiment includes a lead frame, an LED chip, a transparent resin, and a resin housing. The transparent resin coats the LED chip and the top surface of the lead frame. In addition, the transparent resin is filled in the space between the first lead frame and the second lead frame, and a part of the transparent resin is exposed to the bottom surface of the lead frame. The resin housing is provided over the lead frame. The resin housing includes an upper part coating a top surface of the transparent resin, side-surface parts coating side surfaces of the transparent resin, and an opening through which one of the side surfaces of the transparent resin is exposed.

Abstract: A light emitting device package includes substrate; first and second conduction members on the substrate; a light emitting diode on the substrate, the light emitting diode being electrically connected with the first and second conduction members; and a phosphor layer on the light emitting diode.

Abstract: Described herein is a nanowire array, comprising a substrate, a plurality of fluorescent nanowires extending essentially perpendicularly from the substrate and a reflective layer disposed on the substrate in areas between the fluorescent nanowires; wherein the fluorescent nanowires are operable to fluoresce at a wavelength of a collective mode of the nanowire array.

Abstract: A light emitting device 1 includes a wiring substrate 4 on which a light emitting element 2 is mounted, a sealing section 5 containing a phosphor and sealing the light emitting element 2, a light diffusion section 7 provided on the sealing section 5 and containing particles for diffusing light emitted from the light emitting element 2, and a light reflection section 6 provided so as to cover part of the sealing section 5 other than a top surface of the sealing section 5 and reflecting light emitted from the light emitting element 2. In the light diffusion section 7, silicone dioxide which is a diffusing material is contained in a transparent medium which is a base material. In the light reflection section 6, titanium dioxide which is a reflective material is contained in a transparent medium which is a base material.

Abstract: According to one embodiment, an optical device includes a lead, an optical element, and a sealing layer. The optical element is provided on the lead. The sealing layer is provided so as to cover the optical element. An upper surface of the sealing layer has a central portion including an optical axis of the optical element, a protrusion including an inner side surface surrounding the central portion and an outer side surface facing outward, and a connecting portion provided below the inner side surface and between the inner side surface and the central portion. The connecting portion includes a rounded portion on at least one of the inner side surface side and the central portion side. The outer side surface of the protrusion has average value of gradient angle larger than average value of gradient angle of a surface of the central portion.

Abstract: A conversion LED with a chip which emits primary blue radiation, and a layer containing luminescent substance upstream of the chip which converts at least part of the primary radiation of the chip into secondary radiation, wherein a first garnet A3B5O12:Ce yellow-green emitting luminescent substance and a second nitride silicate M2X5Y8:D orange-red emitting luminescent substance is used, wherein the peak wavelength of the primary radiation is in the range of 430 to 450 nm, in particular of up to 445 nm, while the first luminescent substance is a garnet with the cation A=Lu or a mixture of Lu, Y with up a Y fraction of up to 30%, and wherein B has fractions of both Al and Ga, while the second luminescent substance is a nitride silicate which contains both Ba and Sr as cation M, and in which the doping consists of Eu, wherein the second luminescent substance contains 35 to 75 mol.-% Ba for the component M, remainder is Sr, where X=Si and Y=N.

Abstract: A conversion LED comprising a chip which emits primary radiation and, positioned upstream of the chip, a luminescent substance-containing layer which converts at least some of the primary radiation of the chip into secondary radiation, wherein a first yellow-green emitting luminescent substance of the A3B5O12:Ce garnet type and a second orange-red emitting luminescent substance of the MAlSiN3:Eu calsine type is used, wherein the peak wavelength of the primary radiation lies in the 435 to 455 nm range, the first luminescent substance being a garnet having essentially the cation A=Lu or Lu in combination with Y, and B simultaneously having fractions of Al and Ga, while the second luminescent substance is of the basic MAlSiN3:Eu type containing Ca as M with a fraction of at least 80%, in particular at least 90%, preferably at least 95%, where M is Ca alone or predominantly Ca and the remainder of M may be Sr, Ba, Mg, Li or Cu, in each case alone or in combination, and wherein some of the Al up to 20%, preferably

Abstract: An LED chip package structure in order to prevent the light-emitting efficiency of fluorescent powder from decreasing due to high temperature includes a substrate unit, a light-emitting unit, a transparent colloid body unit, a fluorescent colloid body unit and a frame unit. The light-emitting unit has a plurality of LED chips electrically arranged on the substrate unit. The transparent colloid body unit has a plurality of transparent colloid bodies respectively covering the LED chips. The fluorescent colloid body unit has a plurality of fluorescent colloid bodies respectively covering the transparent colloid bodies. The frame unit is covering the peripheries of each transparent colloid body and each fluorescent colloid body in order to expose the top surfaces of the fluorescent colloid body.

Abstract: There is provided a light emitting device package including: a substrate having a circuit pattern formed on at least one surface thereof and including an opening; a wavelength conversion layer formed by filling at least a portion of the opening with a wavelength conversion material; and at least one light emitting device disposed on a surface of the wavelength conversion layer and electrically connected to the circuit pattern.

Abstract: Provided is a light emitting diode (LED) package including a phosphor substrate; an LED chip mounted on the phosphor substrate; a circuit board mounted on the other region of the phosphor substrate excluding the region where the LED chip is mounted; an electrode connection portion for electrically connecting the LED chip and the circuit board; and a sealing member that covers the LED chip, the circuit board, and the phosphor substrate.

Abstract: A method for preparing a phosphor includes: dissolving at least one metal as a raw material of a desired phosphor in liquid ammonia to form a metal-amide type precursor; gathering the metal-amide type precursor; and firing the precursor to form a desired phosphor.

Abstract: An LED package includes a substrate, a blue LED chip, an encapsulant and a fluorescent layer. The blue LED chip is arranged on the substrate. The encapsulant covers the blue LED chip. The fluorescent layer is arranged on a top surface of the encapsulant. The fluorescent layer includes a first fluorescent area above the blue LED chip and a second fluorescent area encircling the first fluorescent area. The first fluorescent area includes red fluorescent substance and green fluorescent substance mixed therein. The second fluorescent area includes yellow fluorescent substance mixed therein.

Abstract: A method of applying a phosphor according to a light-emission characteristic of semiconductor light-emitting devices so as to increase a yield rate of manufacture with respect to a white light-emitting device chip, the method including the operations of testing light-emission characteristics of a plurality of light-emitting devices formed on a wafer; disposing a plurality of light-emitting devices having the same light-emission characteristics on a carrier substrate; applying a same phosphor to the plurality of light-emitting devices disposed on the carrier substrate; and separating the plurality of arrayed light-emitting devices. Thus, a white light-emitting device chip manufactured by using the method may emit almost the same white light.

Abstract: A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, at least one light-emitting chip mounted on the base board, the wavelength converting layer located between an optical plate and each outside surface of the chips so as to extend toward the optical plate using a meniscus control structure, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the optical plate. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and color variability between the light-emitting chips by using the reflective material layer as each reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from various small light-emitting surfaces.

Abstract: A backlight film includes a flexible substrate with a first electrode layer, a polymeric light emitting layer, a second electrode layer and a protection layer formed subsequently on the flexible substrate. The first electrode layer, the polymeric light emitting layer and the second electrode layer each has a predetermined pattern. The backlight film further includes an insulating layer arranged around the polymeric light emitting layer. A method and an apparatus for forming the backlight film are also provided.

Abstract: A LED (light emitting diode) packaging structure includes a base, a LED chip, a gel-blocking structure and a phosphor layer. The LED chip disposed on the base and electrically connected to the base. The LED chip having a substrate and a semiconductor layer formed on the substrate. The gel-blocking structure is disposed on the substrate of the LED chip and surrounding the semiconductor layer. The phosphor layer is filled within a space defined by the gel-blocking structure, the substrate and the semiconductor layer. The present invention also discloses a fabricating method of the LED packaging structure.

Abstract: The present disclosure provides a radiation device. The radiation device includes a first light emitting diode (LED) operable to emit light having a first central wavelength; a second LED configured adjacent the first LED and operable to emit light having a second central wavelength substantially less than the first central wavelength; and a luminescent material disposed on the first LED and the second LED. The luminescent material includes a strontium silicon nitride (SrSi6N8) doped by one of cerium (Ce3+) and cerium, lithium (Ce3+, Li+).

Abstract: A light emitting device is disclosed. The light emitting device includes a first electrode and a second electrode, which have different areas, thereby achieving enhanced bonding reliability.

Abstract: Disclosed is a light emitting device employing non-stoichiometric tetragonal Alkaline Earth Silicate phosphors. The light emitting device comprises a light emitting diode emitting light of ultraviolet or visible light, and non-stoichiometric luminescent material disposed around the light emitting diode. The luminescent material adsorbs at least a portion of the light emitted from the light emitting diode and emits light having a different wavelength from the absorbed light. The non-stoichiometric luminescent material has tetragonal crystal structure, and contains more silicon in the crystal lattice than that in the crystal lattice of silicate phosphors having stoichiometric crystal structure. The luminescent material is represented as the formula (BauSrvCawCux)3-y(Zn,Mg,Mn)zSi1+bO5+2b:Eua. Light emitting devices having improved temperature and humidity stability can be provided by employing the non-stoichiometric tetragonal Alkaline Earth Silicate phosphors.

Abstract: An active matrix substrate is provided with a lead wire led out from a switching element to a surrounding region; a pad portion formed in the lead wire, and positioned in surrounding region; an insulation layer formed so as to cover pad portion, including a passivation film formed of an inorganic material, and a planarization film positioned on passivation film and formed of an organic material, and having a contact hole formed so as to reach pad; and an ITO film positioned in contact hole, and formed on pad. ITO film is formed so as to be spaced from a part defined by planarization film in an inner periphery surface of contact hole.

Abstract: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element, and disposed on the carrier; a wavelength conversion and light guide layer covering the first light guide layer and the light-emitting element, and disposed on the carrier; and a low refractive index layer disposed between the first light guide layer and the wavelength conversion and light guide layer; wherein the first light guide layer comprises a gradient refractive index, the wavelength conversion and light guide layer comprises a dome shape structure and is used to convert a wavelength of light emitted from the light-emitting element and transmit light, and the low refractive index layer is used to reflect light from the wavelength conversion and light guide layer.

Abstract: The present invention provides a light emitting device, comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor. According to the present invention, there is provided a white light emitting device, wherein using a light emitting diode for emitting light different in wavelength from light that is ex-cititively emitted from the phosphor, an excitation light source, i.e., light in the ultraviolet region for exciting the phosphor is effectively used, thereby improving energy conversion efficiency and improving reliability.

Abstract: A light emitting device comprises an excitation source (20), one or more light emitting diode(s) operable to generate excitation light of a first wavelength range (?1) and a light emitting surface (14) having a phosphor material (26) which absorbs at least a part of the excitation light and emits light of a second wavelength range (?2), wherein light (32) emitted by the device comprises combined light of the first and second wavelength ranges emitted by the light emitting surface. The device is characterized by the light emitting surface having one or more window areas (28) which does not include a phosphor material and which are substantially transparent to light of the first and second wavelengths. The light emitting surface can comprise a transparent substrate (14) having a pattern of phosphor material on a surface thereof with the one or more window areas evenly distributed over the light emitting surface.

Abstract: A light-emitting element that has an improved light-extraction efficiency and an improved color purity of an emitted light. A light-emitting element includes a reflective electrode, a transparent electrode, a light-emitting layer, a functional layer, and a color filter. An optical film thickness of the functional layer is from approximately 218 nm to approximately 238 nm for a light emitting element that emits a blue light. An optical film thickness of the functional layer is from approximately 384 nm to approximately 400 nm for a light emitting element that emits a red light.

Abstract: An exemplary LED package includes a substrate, an electric layer formed on the substrate, an LED chip mounted on the substrate and electrically connected with the electric layer, a first fluorescent layer and a second fluorescent layer. The first fluorescent encloses the LED chip and includes first phosphorous compounds. The second fluorescent covers the first fluorescent layer and includes second phosphorous compounds different from the first phosphorous compounds. The second fluorescent layer is detachably mounted at an outside of the first fluorescent layer.

Abstract: A light-emitting apparatus includes a blue color LED, a fluorescent substance mixed transparent resin that covers the blue color LED and generates yellow light, a red LED disposed on the fluorescent substance mixed transparent resin and a transparent resin that covers the red LED.

Abstract: A light-emitting diode includes a light-emitting diode chip which emits primary radiation in a spectral range of blue light during operation; a conversion element including a first phosphor and a second phosphor which absorbs part of the primary radiation and re-emits secondary radiation, wherein the first phosphor has, in an absorption wavelength range (??ab), an absorption that decreases as the wavelength increases, and the second phosphor has, in the same absorption wavelength range (??ab), an absorption that increases as the wavelength increases; the primary radiation includes wavelengths that lie in the absorption wavelength range (??ab); and the light-emitting diode emits white mixed light including primary radiation and secondary radiation and having a color temperature of at least 4000 K.

Abstract: An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion. Accordingly, a reduction in luminous efficiency of an LED caused by yellowing is prevented to thereby increase luminous efficiency and achieve a reduction in size.

Abstract: The invention provides an organic EL device including an anode, a cathode, and a luminescent portion positioned between the anode and cathode, the luminescent portion including two or more luminescent layers, each of the luminescent layers including plural primary luminescent layers that emit light of different colors, and each of the primary luminescent layers having a thickness of 5 nm or less.

Abstract: A white light-emitting diode package structure for simplifying package process includes a substrate unit, a light-emitting unit, a phosphor unit and a conductive unit. The light-emitting unit is disposed on the substrate, and the light-emitting unit has a positive conductive layer and a negative conductive layer. The phosphor unit has a phosphor layer formed on the light-emitting unit and at least two openings for respectively exposing one partial surface of the positive electrode layer and one partial surface of the negative electrode layer. The conductive unit has at least two conductive wires respectively passing through the two openings in order to electrically connect the positive electrode layer with the substrate unit and electrically connect the negative electrode layer with the substrate unit.

Abstract: Semiconductor light emitting devices include an aluminum nitride substrate, a light emitting diode on a face of the substrate and flexible silicone film that includes a silicone lens on the face of the substrate. The light emitting diode emits light through the silicone lens.

Abstract: The present invention is a phosphor expressed by the general formula (A1?xRxM2X)m(M2X4)n (wherein the element A is one or more types of element selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, and Lu, the element R is one or more types of activating agent selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, the element M is one or more types of element selected from Si, Ge, Sn, Ti, Hf, Zr, Be, B, Al, Ga, In, Tl, and Zn, the element X is one or more types of element selected from oxygen and nitrogen, n and m are integers of 1 or more, and x is a real number defined by 0<x<1), as well as a manufacturing method for the same, and a light-emitting device that uses this phosphor.

Abstract: An LED package includes a substrate, an LED chip, and an encapsulation. The substrate includes a first surface. The LED chip is mounted on the first surface of the substrate. The encapsulation covers the LED chip. The encapsulation includes a transparent main body and a number of carbon nanotubes distributed in the transparent main body; the carbon nanotubes are arranged substantially extending along a same direction whereby light generated by the LED chip is polarized prior to radiation out of the encapsulation.

Abstract: A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength, and a wavelength conversion material configured to receive the primary light emitted by the light emitting diode and to responsively emit light having a color point with a ccx greater than about 0.4 and a ccy less than about 0.6.

Abstract: Method of manufacturing gradient composite material comprises steps of providing plural surface modified inorganic nanoparticles with functional groups or oligomers with functional groups; transferring the surface modified inorganic nanoparticles or oligomers with functional groups into an organic matrix to form a mixture; performing a photo polymerization step or a thermo-polymerization step for polymerizing and generating a gradient distribution of the surface modified inorganic nanoparticles or oligomers with functional groups in the mixture; and curing the mixture to solidify the organic matrix and form a structure with gradient composite, wherein the organic matrix is transferred into an organic polymer after curing.

Abstract: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a wavelength conversion unit disposed on the substrate to cover at least an upper surface of the light emitting element; and a reflection unit formed to cover a side surface and a lower surface of the substrate and having a resin and a reflective filler dispersed in the resin. Light emitting devices having uniform characteristics can be obtained by minimizing a chromaticity distribution of white light with respect to the different light emitting devices.

Abstract: Provided is a highly reliable LED package with significantly improved heat radiating properties, manufacturing method of the LED package, and an LED chip assembly used in the LED package. The LED package is characterized in that the LED chip assembly (10) is bonded to a circuit board (11) created by forming metal circuitry (3) on a metal substrate (5) with an insulation layer (4) therebetween, whereas an LED chip (1) of the LED chip assembly and the metal circuitry (3) of the circuit board are connected via an electrical connection member (9), and at least the LED chip assembly and the electrical connection member are encapsulated with resin encapsulant (8) including fluorescent material.

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

Abstract: Semiconductor white light sources presented herein include special combinations of a blue source and a yellow source where these light fields are substantially overlapped. The source of blue light includes a blue emitting semiconductor operating in a conventional manner. However, this blue light source is combined with a special yellow light source and the light produced by each is mixed together. The yellow light source is primarily comprised of a high output ultraviolet emitting semiconductor coupled to a wavelength shifting medium whereby the semiconductor pumps the wavelength shifting medium causing re-emission at longer wavelengths; namely those corresponding to yellow colored light. These two sources operating in conjunction with each other operate to produce higher outputs than those attainable in competitive white light semiconductor systems. In special versions, provision is made whereby the color coordinates may be tuned by a variable current applied to the blue emitting semiconductor.

Abstract: An LED includes a substrate, an LED chip setting on the substrate and a reflection cup surrounding the LED chip on the substrate. The LED chip electrically connects with two electrodes setting on the substrate. The reflection cup is filled with an encapsulating material. A fluorescent layer is formed by heating the encapsulating material and deposits on an end of the encapsulation away from the LED chip. The fluorescent layer is used for converting light from the LED chip into a specific wavelength.

Abstract: A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void therein. A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a void therein.

Abstract: An LED package structure includes a substrate, a first electrical portion and a second electrical portion formed on the substrate, and an LED chip mounted on a first surface of the first electrical portion. The first and second electrical portions are electrically insulated from each other. The LED chip includes a first electrode connected with the first electrical portion and a second electrode connected with the second electrical portion through a connecting wire. The LED chip has a top surface for supporting the second electrode. The connecting wire has a highest point. A distance between the highest point and the top surface is less than a half of a distance between the first surface of the first electrical portion and the top surface of the LED chip.

Abstract: An LED packaging method includes: providing a mold with two isolated receiving spaces and a substrate with a die supporting portion and an electrode portion respectively received in the two receiving spaces; disposing an LED die on the die supporting portion and electrically connecting the LED die to the electrode portion of the substrate by metal wires; injecting a light wavelength converting material into the first receiving space and covering the LED die with the light wavelength converting material; communicating the first receiving space to the second receiving space, injecting a first light transmissive material into the communicated first and second spaces, and covering the light wavelength converting material and the metal wires with the first light transmissive material; and removing the mold to obtain a packaged LED.

Abstract: A manufacturing method of a color filter substrate, a semi-transmissive LCD using the same, and a manufacturing method thereof are disclosed. In one embodiment, the manufacturing method of the color filter substrate includes preparing a first substrate which comprises a reflection region and a transmission region. Then, a color resist on the first substrate is formed. A mask, including a semi-transmission mask corresponding to the reflection region, is provided on the color resist. An exposure process is provided for the color resist with the mask to form a color filter layer on the first substrate. The color filter layer is formed by removing a portion of the color resist of the reflection region.

Abstract: A light-emitting module is provided, including a heat sink and a plurality of insulating layers disposed over the heat sink. A plurality of light-reflective layers is disposed over one of the insulating layers, respectively, wherein the light-reflective layers comprise a plurality of light-reflective inclined surfaces. A plurality of conductive layers is disposed over one of the light-reflective layers, respectively. A light-emitting diode (LED) chip is disposed over the heat sink. A plurality of bonding wires is provided, connecting the LED chip with the conductive layers. A transparent housing is disposed over the LED chip. A phosphor layer is disposed over a surface of the transparent housing facing the heat sink, and does not physically contact the LED chip.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a substrate comprising a recess, a light emitting chip on the substrate and a first conductive layer electrically connected to the light emitting chip. And the first conductive layer includes at least one metal layer electrically connected to the light emitting chip on an outer circumference of the substrate.

Abstract: Two or more molded ellipsoid lenses are formed on a packaged LED die by injecting a glue material into a mold over the LED die and curing the glue material. After curing, the refractive index of the lens in contact with the LED die is greater than the refractive index of the lens not directly contacting the LED die. At least one phosphor material is incorporated into the glue material for at least one of the lenses not directly contacting the LED die. The lens directly contacting the LED die may also include one or more phosphor material. A high refractive index coating may be applied between the LED die and the lens.

Abstract: The present disclosure provides an illuminating system including a light emitting device and a luminescent material disposed approximate the light-emitting device. The luminescent material includes a strontium silicon nitride (SrSi6N8) doped by one of cerium (Ce3+) and cerium (Ce3+) and lithium (Li+).

Abstract: A light emitting element package includes a substrate, a light emitting element, and a package member. The substrate includes a first solder pad and a second solder pad. The light emitting element is mounted on the substrate and includes a p-type electrode and an n-type electrode. The package member is configured for enveloping the light emitting element. A first electrode and a second electrode are formed on the package member. The first electrode and the second electrode of the package member are electrically coupled to the p-type electrode and the n-type electrode of the light emitting element. The first electrode and the second electrode of the package member are electrically coupled to the first solder pad and the second solder pad of the substrate.