Abstract: Disclosed is a white light emitting device including a semiconductor light emitting element configured to emit near ultraviolet light having a peak wavelength ranging from 380 to 410 nm, a first phosphor layer and a second phosphor layer. The first phosphor layer contains a blue-emitting phosphor configured to emit blue light by the near ultraviolet light, and a red-emitting phosphor activated by trivalent europium and configured to emit red light by the near ultraviolet light. The second phosphor layer contains a green-emitting phosphor configured to emit green light by the near ultraviolet light. The semiconductor light emitting element, the first phosphor layer and the second phosphor layer are laminated in this order to emit white light.

Abstract: Solid state light emitting devices and/or solid state lighting devices use three or more phosphors excited by energy from a solid state source. The phosphors are selected and included in proportions such that the visible light output of such a device exhibits a radiation spectrum that approximates a black body radiation spectrum for the rated color temperature for the device, over at least a predetermined portion of the visible light spectrum.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

Abstract: A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.

Abstract: Exemplary embodiments of the present invention relate to light emitting devices including strontium oxyorthosilicate-type phosphors. The light emitting device includes a light emitting diode, which emits light in the UV or visible range, and phosphors disposed around the light emitting diode to absorb light emitted from the light emitting diode and emit light having a different wavelength from the absorbed light. The phosphors include an oxyorthosilicate phosphor having a general formula of Sr3-x-y-zCaxMIIySiO5: Euz with a calcium molar fraction in the range of 0<x?0.05.

Abstract: A composition for manufacture of a light emitting particle-polymer composite, the composition including a light emitting particle, a first monomer including at least two thiol groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.

Abstract: A LED chip package structure includes a substrate unit, a light-emitting unit, and a package unit. The substrate unit includes a strip substrate body. The light-emitting unit includes a plurality of LED chips disposed on the strip substrate body and electrically connected to the strip substrate body. The package unit includes a strip package colloid body disposed on the strip substrate body to cover the LED chips, wherein the strip package colloid body has an exposed top surface and an exposed surrounding peripheral surface connected between the exposed top surface and the strip substrate body, and the strip package colloid body has at least one exposed lens portion projected upwardly from the exposed top surface thereof and corresponding to the LED chips. Hence, light beams generated by the LED chips pass through the strip package colloid body to form a strip light-emitting area on the strip package colloid body.

Abstract: A method of fabricating light emitting diode chips having a phosphor coating layer comprises providing a substrate having a plurality of light emitting diodes formed thereon; forming a conductive bump on at least one of the plurality of light emitting diodes; forming a phosphor coating layer over the substrate and the light emitting diodes; cutting the phosphor coating layer by a point cutter to remove an upper portion of the phosphor coating layer, so as to reduce a thickness of the phosphor coating layer and expose the conductive bump; and forming a plurality of individual light emitting diode chips having the phosphor coating layer by separating the plurality of light emitting diodes.

Abstract: A phosphor ceramic includes at least one fluorescent layer that is capable of emitting fluorescent light; and at least one non-fluorescent layer that does not emit fluorescent light and is laminated onto the fluorescent layer.

Abstract: A light emitting device package is provided comprising a light emitting device including at least one light emitting diode and a body including a first lead frame on which the light emitting device is mounted and a second lead frame spaced apart from the first lead frame, wherein at least one of the first and second lead frames is extending to a bending region in a first direction by a predetermined length on the basis of an outer surface of the body and is bent in a second direction intersecting the first direction.

Abstract: A light emitting device includes a package body including a multilayer cavity; a first light emitting part including a first light emitting device in a first cavity of a first layer area of the multilayer cavity, and a second light emitting part including a second light emitting device in a second cavity of a second layer area higher than the first layer area.

Abstract: A phosphor layer is composed of a resin in which phosphor particles and light scattering particles are dispersed.

Abstract: A light emitting device includes a light emitting element, a first phosphor which emits a light by being excited by a light emitted from the light emitting element and a second phosphor which emits a light by being excited by the light emitted from the light emitting element and/or the light emitted from the first phosphor. The light emitted from the light emitting element, the light emitted from the first phosphor and the light emitted from the second phosphor are mixed to make an inclination angle of a line, on a chromaticity diagram, connecting a chromaticity coordinate of the light emitted from the first phosphor and a chromaticity coordinate of the light emitted from the light emitting element equal to an inclination angle of an isotemperature line of light of a predetermined color temperature.

Abstract: In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts.

Abstract: The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.

Abstract: An LED package includes a transparent substrate, an LED die, and an encapsulating layer. The transparent substrate has a first surface defining a recess therein, a second surface opposite to the first surface, and a lateral surface interconnecting the first and second surfaces. The LED die is arranged on the bottom of the recess. The encapsulating layer is in the recess and covers the LED die. The LED package further includes a metal layer formed on the second surface and the lateral surface of the substrate. A pair of electrodes is located at the bottom of the recess and extends through the metal layer. An insulated material is filled between the transparent substrate and the electrodes. Light emitted from the LED die is transmitted through the transparent substrate and reflected by the metal layer.

Abstract: A transfer sheet for a phosphor layer includes a release substrate, a phosphor layer formed on the release substrate, and an adhesive layer formed on the phosphor layer.

Abstract: The present invention relates to a composite film including a wavelength conversion layer and a diffusive reflection resin layer in a laminated state and being used in a semiconductor light emitting device, in which the wavelength conversion layer contains a phosphor material which absorbs a part or all of excitation light and is excited to emit visible light in a wavelength region longer than a wavelength of the excitation light, the diffusive reflection resin layer is selectively formed with patterning on one surface of the wavelength conversion layer, and a region on the one surface of the wavelength conversion layer where the diffusive reflection resin layer is not formed with patterning is a path of the excitation light which excites the phosphor material in the wavelength conversion layer.

Abstract: An optoelectronic component (1) is specified, comprising a connection carrier (2) on which a radiation-emitting semiconductor chip (3) is arranged, and a conversion element (4) fixed to the connection carrier (2). The conversion element (4) spans the semiconductor chip (3) in such a way that the semiconductor chip (3) is surrounded by the conversion element (4) and the connection carrier (2), and the conversion element (4) consists of one of the following materials: ceramic, glass ceramic.

Abstract: Packaged LEDs with phosphor films, and associated systems and methods are disclosed. A system in accordance with a particular embodiment of the disclosure includes a support member having a support member bond site, an LED carried by the support member and having an LED bond site, and a wire bond electrically connected between the support member bond site and the LED bond site. The system can further include a phosphor film carried by the LED and the support member, the phosphor film being positioned to receive light from the LED at a first wavelength and emit light at a second wavelength different than the first. The phosphor film can be positioned in direct contact with the wire bond at the LED bond site.

Abstract: A lighting device comprising LEDs with phosphor layers includes a plurality of LED sets which can emit light with a peak emission wavelength between 360 nm and 490 nm; and a plurality of sets of phosphor layers covering the corresponding LED sets among the plurality of LED sets. At least two of the plurality of LED sets respectively have peak emission wavelength different from each other. The dominant fluorescence wavelength of at least one of the plurality of sets of phosphor layers ranges from 500 nm to 580 nm, and the dominant fluorescence wavelength of at least one of the other sets of phosphor layers ranges from 590 nm to 650 nm.

Abstract: Provided is a light emitting device package and a method of fabricating the same. The light emitting device package comprises a package body having a cavity, a seed layer on a surface of the package body, a conductive layer on the seed layer, a mirror layer on the conductive layer, and a light emitting device in the cavity.

Abstract: The present invention relates to a semiconductor light emitting device including: a substrate for element mounting; a wiring provided on the substrate; an LED element provided on the substrate and electrically connected to the wiring; an encapsulating resin layer for encapsulating the LED element; and a wavelength conversion layer which contains a phosphor material and converts a wavelength of light emitted by the LED element, in which the wavelength conversion layer is provided on an upper side of the LED element, and a diffusive reflection resin layer is provided in a state that side faces of the LED element are surrounded therewith, and an area at the LED element face side of the wavelength conversion layer is at least twice larger by area ratio than an area of light emitting area on an upper surface of the LED element.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, a transparent material layer located between the wavelength converting layer and a side surface of the chip so as to extend toward the wavelength converting layer, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the reflective material layer as a reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.

Abstract: A fluorescent substance is provided having excellent temperature properties and capable of being excited by light in the region from near ultraviolet to short-wavelength visible light to emit light of yellow to red color. A process for producing the fluorescent substance, and a light emitting device using the fluorescent substance is also provided. The fluorescent substance includes M which is at least one group II element selected from Ca, Sr, and Ba, and Al, Si, O, and N, and activated with Eu. The fluorescent substance has an X-ray diffraction pattern using CuK? radiation, in which the intensity of the diffraction peak in the Bragg angle range of 17.9° to 18.5° is taken as 100%, the relative intensity of the diffraction peak is 150% to 310% in a Bragg angle range of 24.5° to 25.1°, and is 320% to 550% in a Bragg angle range of 34.8° to 35.4°.

Abstract: A formed, multi-dimensional light-emitting diode (LED) array is disclosed. A substrate is bent into a trapezoidal shape having different sections facing in different directions. Each section has one or more mounted LEDs that emit light with an azimuthally non-circular, monotonic angular distribution. A converter material is placed in an optical path of the LEDs to alter characteristics of the light from the LEDs.

Abstract: According to one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include forming a first electrode and a second electrode on a semiconductor layer which is included in a first structure body, the semiconductor layer including a light-emitting layer on a substrate. The method can include forming a first metal pillar in conduction with the first electrode, and a second metal pillar in conduction with the second electrode. The method can include filling a region between the first metal pillar and the second metal pillar with an insulating layer. In addition, the method can include separating the substrate from the semiconductor layer, and forming a second structure body in which the semiconductor layer is supported by the insulating layer and which is convex toward an opposite side of the insulating layer to the semiconductor layer.

Abstract: A fluorescent structure for a light-emitting package includes a first fluorescent layer and a second fluorescent layer covering the first fluorescent layer. The first fluorescent layer includes first fluorescent strips, and defines first transparent regions between the first fluorescent strips. The second fluorescent layer includes second fluorescent strips, and defines second transparent regions between the second fluorescent strips. A method for forming the fluorescent structure and a light-emitting diode package using the fluorescent structure are also provided.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface. The light transmitting section is provided on a side of the first major surface. The wavelength conversion section is provided over the light transmitting section. The wavelength conversion section is formed from a resin mixed with a phosphor, and hardness of the cured resin is set to exceed 10 in Shore D hardness.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract: A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ?20 ?m and a mean grain diameter d50?5 ?m.

Abstract: A light-emitting device (LED) is disclosed. The LED includes a carrier substrate having a blue light emitter thereon. A layer containing a fluorescent material is on the blue light emitter. An encapsulant is disposed around the blue light emitter. Pigments are suspended between an outer surface of the encapsulant and the blue light emitter.

Abstract: A light-emitting diode (LED) package structure includes a substrate, a first LED, a second LED, and a resin material. At least one enclosure made of a transparent material forms on a surface of the substrate, and encloses and forms at least one area on the substrate. The first LED and the second LED are disposed in the area and adjacent to each other, and the resin material is disposed in the area, and covers the first LED and the second LED. The LED package structure obtains desired illuminating lights by mixing lights respectively emitted by the first LED and the second LED.

Abstract: The present invention relates to an oxynitride phosphor, a method for preparing the same, and a light-emitting device. More specifically, the present invention provides the oxynitride phosphor including crystals represented by the following Chemical Formula, a method for preparing the same, and a light-emitting device including the oxynitride phosphor. The invention includes the crystals' represented by the following Chemical Formula to obtain high light-emitting efficiency. [Chemical Formula] (A(1-p-q)BpCq)aDbSicOdNe:xEu2+, yRe3+, Zq) wherein A, B, and C are +2 metals, but different metals from one another; D is metals of Group 3; Re is +3 metals; Q is a flux; p and q are 0<p<1.0 and 0?q<1.0; a, b, c, d, and e are 1.0?a?2.0, 0?b?4.0, 0<c?1.0, 0<d?1.0, and 0<e?2.0; x, y, and z are 0<x?0.25, 0?y?0.25, and 0?z?0.25.

Abstract: A mortar-shaped or funnel-shaped light emitting device (50) includes: a substrate (20); at least one LED chip (25) die-bonded to the substrate (20); and a wavelength converting portion (40) covering said at least one LED chip (25); at least four planes uprising from the substrate (20); and a lens having a top surface (10a) facing the substrate (20), the four planes being positioned in four directions, respectively, in such a manner as to surround said at least one LED chip (25), and the top surface (10a) having a concave portion.

Abstract: The invention discloses a power-type LED comprising a support frame, a group of LED chips mounted on the frame, and an exterior wrapping layer made of a fluorescent substance; Said support frame consists of a left support and an opposite right support placed at a distance from each other; The upper parts of the left and right supports are semi-cylinders, semi-cones, or semi-rings having multi-direction chip-fixing surfaces; A group of LED chips is respectively fixed onto the chip-fixing surfaces of the left support and the right support. All LED chips are serial-connected or parallel-connected with conducting wires.

Abstract: A first device that may include one or more organic light emitting devices. At least 65 percent of the photons emitted by the organic light emitting devices are emitted from an organic phosphorescent emitting material. An outcoupling enhancer is optically coupled to each organic light emitting device. In one embodiment, the light panel is not attached to a heat management structure. In one embodiment, the light panel is capable of exhibiting less than a 10 degree C. rise in junction temperature when operated at a luminous emittance of 9,000 lm/m2 without the use of heat management structures, regardless of whether the light panel is actually attached to a heat management structure or not. The light panel may be attached to a heat management structure. The light panel may be not attached to a heat management structure.

Abstract: In a light emission module (40), a light wavelength conversion ceramic (52) is formed in a sheet shape which converts the wavelength of the light emitted from a semiconductor light emission element (48) when emitting the light. The light wavelength conversion ceramic (52) has a tapered plane (52a) which is inclined to approach the semiconductor light emission element (48) toward the brim portion. The light wavelength conversion ceramic (52) is transparent and is arranged so that the light emission wavelength band after the conversion has an all ray permeability of 40% or above.

Abstract: A light emitting diode apparatus with enhanced luminous efficiency is disclosed in the present invention. The light emitting diode apparatus includes a light emitting diode chip for providing a first light beam; a substrate, having a cross-section of a trapezoid, for supporting the light emitting diode chip, which is transparent to the first light beam; and an encapsulating body, containing a phosphor and encapsulating the light emitting diode chip and the substrate, for fixing the light emitting diode chip and the substrate and providing a second light beam when the phosphor is excited by the first light beam. Due to the shape of the substrate, contact area of the substrate with the phosphor is enlarged. Luminous efficiency is enhanced as well.

Abstract: A thin-type light emitting diode lamp includes a blue light emitting diode chip (6) disposed at a substantial center of an inner bottom surface of a groove-shaped recess (3) formed at an end surface and having a thin elongated rectangular opening, a red light conversion layer (7) covering the blue light emitting diode chip (6) and made of a light-transmitting synthetic resin containing powder of a red fluorescent material which emits red light when excited by blue light emitted from the blue light emitting diode chip, and a green light conversion layer (10) made of a light-transmitting synthetic resin containing powder of a green fluorescent material which emits green light when excited by the blue light. The light emitting diode lamp further includes a light transmitting layer (9) intervening between the red light conversion layer (7) and the green light conversion layer (10).

Abstract: Exemplary embodiments of the present invention provide light emitting diode (LED) packages which include a housing configured to surround uplift portions formed on lead frames electrically connected to an LED chip. The LED package includes an LED chip, a first lead frame and a second lead frame electrically connected to the LED chip, the first lead frame and the second lead frame respectively including a first uplift portion and a second uplift portion on regions thereof facing each other, and a housing supporting the first lead frame and the second lead frame, a first side of the housing exposed to the outside. The first lead frame and the second lead frame each include a first side parallel to the first side of the housing and a second side opposite to the first side.

Abstract: An exemplary embodiment of the present invention discloses an LED chip including a substrate, a GaN-based compound semiconductor stacked structure arranged on the substrate, an electrode electrically connected to the semiconductor stacked structure, and a wavelength converting layer covering a portion of the semiconductor stacked structure. The electrode passes through the wavelength converting layer. The semiconductor stacked structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer.

Abstract: A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.

Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

Abstract: A light emitting diode (LED) package structure comprising a carrier, an LED chip, a first encapsulant, at least one bonding wire, a plurality of phosphor particles and a second encapsulant is provided. The LED chip is disposed on the carrier. The LED chip has at least one electrode. The first encapsulant is disposed on the carrier and covering the LED chip. The first encapsulant is provided with at least one preformed opening exposing at least a portion of the at least one electrode. The at least one bonding wire is electrically connected between the at least one electrode and the carrier via the at least one preformed opening. The phosphor particles are distributed within the first encapsulant. The second encapsulant is disposed on the carrier and encapsulates the LED chip, the first encapsulant and the at least one bonding wire.

Abstract: A light emitting device package capable of achieving an enhancement in light emission efficiency and a reduction in thermal resistance, and a method for manufacturing the same are disclosed. The method includes forming a mounting hole in a first substrate, forming through holes in a second substrate, forming a metal film in the through holes, forming at least one pair of metal layers on upper and lower surfaces of the second substrate such that the metal layers are electrically connected to the metal film, bonding the first substrate to the second substrate, and mounting at least one light emitting device in the mounting hole such that the light emitting device is electrically connected to the metal layers formed on the upper surface of the second substrate.

Abstract: The present invention relates to a composition of plastic material that includes from 7 to 20 wt. % inorganic conversion pigments.