Characterized By Shape (epo) Patents (Class 257/E33.065)
  • Patent number: 9029890
    Abstract: A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: May 12, 2015
    Assignee: Epistar Corporation
    Inventors: Chung-Ying Chang, Dennis Wang, Jenq-Dar Tsay
  • Patent number: 9024351
    Abstract: A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.
    Type: Grant
    Filed: March 28, 2012
    Date of Patent: May 5, 2015
    Assignee: Huga Optotech Inc.
    Inventors: Der-Wei Tu, Wei-Chih Wen, Tai-Chun Wang, Po-Hung Lai, Chih-Ping Hsu
  • Patent number: 9018666
    Abstract: There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
    Type: Grant
    Filed: March 22, 2010
    Date of Patent: April 28, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Pun Jae Choi, Ki Yeol Park, Sang Bum Lee, Seon Young Myoung, Myong Soo Cho
  • Patent number: 9018641
    Abstract: A method for manufacturing a radiation-emitting component (1) in which a field distribution of a near field (101, 201) in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile (111, 211, 511) along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: April 28, 2015
    Assignee: CSRAM Opto Semiconductors GmbH
    Inventors: Peter Brick, Uwe Strauss
  • Patent number: 8987772
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: March 24, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang-Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Patent number: 8981420
    Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.
    Type: Grant
    Filed: May 18, 2006
    Date of Patent: March 17, 2015
    Assignee: Nichia Corporation
    Inventors: Takeshi Kususe, Yoshiyuki Aihara, Daisuke Sanga, Kouichiroh Deguchi
  • Patent number: 8981417
    Abstract: An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: March 17, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Yuriy Bilenko, Remigijus Gaska, Michael Shur
  • Patent number: 8981411
    Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: March 17, 2015
    Assignee: Epistar Corporation
    Inventors: Chih-Chiang Lu, Shu-Ting Hsu, Yen-Wen Chen, Chien-Yuan Wang, Ru-Shi Liu, Min-Hsun Hsieh
  • Patent number: 8975650
    Abstract: A semiconductor light emitting device that includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer. The reflective electrode layer includes a first part in contact with an under surface of the electrode layer and a second part spaced apart from the electrode layer. A portion of the light transmitting layer is physically contacted with an outer side of the electrode layer and is physically contacted with the lower surface of the light emitting structure. The conductive supporting member has a thickness thicker than a thickness of the light transmitting layer.
    Type: Grant
    Filed: July 31, 2012
    Date of Patent: March 10, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Patent number: 8952416
    Abstract: A light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A first electrode is coupled to the first conductive semiconductor layer, and a second electrode is coupled to the second conductive semiconductor layer. A channel layer is provided around a lower portion of the light emitting structure. A first conductive support member is coupled to the second electrode and disposed adjacent to the second electrode. A second conductive support member is electrically insulated from the first conductive support member and disposed adjacent to the second electrode. A first connection part is coupled to the first electrode and the second conductive support member.
    Type: Grant
    Filed: August 20, 2013
    Date of Patent: February 10, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Patent number: 8946733
    Abstract: An organic light-emitting display apparatus that improves image quality characteristics, the organic light-emitting display apparatus including: a substrate; a first electrode formed on the substrate; a pixel-defining layer (PDL) formed on the first electrode to expose a set or predetermined region of the first electrode; an intermediate layer formed in the exposed predetermined region of the first electrode and including an organic emission layer; and a second electrode having a light-scattering face facing the substrate or facing oppositely away from the substrate, the second electrode being disposed on the intermediate layer.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: February 3, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Valeriy Prushinskiy, Len Kaplan, Se-Ho Cheong, Won-Sik Hyun, Min-Soo Kim, Kyong-Tae Park, Byoung-Seong Jeong, Jang-Seok Ma
  • Patent number: 8936950
    Abstract: To improve light emission efficiency and reliability. A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: January 20, 2015
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Naoki Nakajo, Masao Kamiya, Akihiro Honma
  • Patent number: 8933531
    Abstract: A semiconductor device including a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) generated within the semiconductor layer; a plurality of first ohmic electrodes which are disposed on the central region of the semiconductor layer and have island-shaped cross sections; a second ohmic electrode which is disposed on edge regions of the semiconductor layer; and a Schottky electrode part has first bonding portions bonded to the first ohmic electrodes, and a second bonding portion bonded to the semiconductor layer. A depletion region is provided to be spaced apart from the 2DEG when the semiconductor device is driven at an on-voltage and is provided to be expanded to the 2DEG when the semiconductor device is driven at an off-voltage, the depletion region being generated within the semiconductor layer by bonding the semiconductor layer and the second bonding portion.
    Type: Grant
    Filed: November 1, 2012
    Date of Patent: January 13, 2015
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Woo Cul Jeon, Jung Hee Lee, Young Hwan Park, Ki Yeol Park
  • Patent number: 8928027
    Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.
    Type: Grant
    Filed: November 8, 2013
    Date of Patent: January 6, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yung Ho Ryu, Hae Yeon Hwang, Young Chul Shin
  • Patent number: 8928017
    Abstract: Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: January 6, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su-hee Chae, Young-soo Park, Bok-ki Min, Jun-youn Kim, Hyun-gi Hong
  • Patent number: 8912028
    Abstract: A semiconductor light emitting device, which includes a light transmissive electrode layer formed using a conductive thin film and an insulating thin film to substitute for a transparent electrode layer, comprises a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; a light transmissive electrode layer formed on the second semiconductor layer, the light transmissive electrode layer having a structure in which at least one conductive thin film and at least one insulating thin film are deposited; and a first electrode formed on the light transmissive electrode layer, wherein the light transmissve electrode layer includes at least one contact portion for contacting the at least one conductive thin film with the first electrode.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: December 16, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Taeil Jung, YoungChae Kim, SunMan Kim, Yeji Han, Chunghoon Park, Byeong-Kyun Choi, Se-Eun Kang
  • Patent number: 8912559
    Abstract: A Group III nitride semiconductor light-emitting device, includes a groove having a depth extending from the top surface of a p-type layer to an n-type layer is provided in a region overlapping (in plan view) with the wiring portion of an n-electrode or the wiring portion of a p-electrode. An insulating film is provided so as to continuously cover the side surfaces and bottom surface of the groove, the p-type layer, and an ITO electrode. The insulating film incorporates therein reflective films in regions directly below the n-electrode and the p-electrode (on the side of a sapphire substrate). The reflective films in regions directly below the wiring portion of the n-electrode and the wiring portion of the p-electrode are located at a level lower than that of a light-emitting layer. The n-electrode and the p-electrode are covered with an additional insulating film.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: December 16, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Shingo Totani, Masashi Deguchi, Naoki Nakajo
  • Patent number: 8907345
    Abstract: A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same.
    Type: Grant
    Filed: February 1, 2014
    Date of Patent: December 9, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yeon-Ju Kim, Sung-Jae Moon, Yun-Jung Cho, Bum-Ki Baek, Kwang-Hoon Lee, Byoung-Sun Na, Sung-Hoon Yang, Yoon-Jang Kim, Eun Cho
  • Patent number: 8884328
    Abstract: Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer, a current spreading layer on the second conductive type semiconductor layer, an insulation layer on the first electrode, and a second electrode comprising at least one bridge portion on the insulation layer and a first contact portion contacting at least one of the second conductive type semiconductor layer and the current spreading layer.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: November 11, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Woo Sik Lim, Sung Kyoon Kim, Sung Ho Choo, Byeong Kyun Choi
  • Patent number: 8884396
    Abstract: According to one embodiment, a first back surface of a first substrate and a second front surface of a second substrate are jointed together so as to connect a first conductor with a second conductor. The first conductor includes a portion having a diameter equal to that of a first gap formed above a first metal layer in a range between the first metal layer and a first front surface, and a portion having a diameter greater than that of the first gap and smaller than an outer diameter of the first metal layer in a range between the first metal layer and the first back surface. A first insulating layer has a gap formed above the first metal layer, the gap being greater than the first gap and smaller than the outer diameter of the first metal layer.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: November 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Mitsuyoshi Endo
  • Patent number: 8878220
    Abstract: Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer.
    Type: Grant
    Filed: August 15, 2011
    Date of Patent: November 4, 2014
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jeong Hee Yang, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Duk Il Suh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong
  • Patent number: 8872204
    Abstract: A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 ?m2 and 6.2×104 ?m2.
    Type: Grant
    Filed: June 2, 2011
    Date of Patent: October 28, 2014
    Assignee: Epistar Corporation
    Inventors: Yu-Chen Yang, Li-Ping Jou, Jui-Hung Yeh, Chien-Fu Shen
  • Patent number: 8866180
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: October 21, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sung Kyoon Kim, Myeong Soo Kim, Woo Sik Lim, Min Gyu Na, Sung Ho Choo
  • Patent number: 8866165
    Abstract: A light emitting apparatus includes a plurality of single crystal semiconductor thin films that emit light. The single crystal semiconductor thin films are secured in intimate contact to the surface of a substrate or a bonding layer formed on the substrate. A first conductive electrode is formed on the single crystal semiconductor thin film and is connected to a first conductive side metal layer. The first conductive side metal layer is closer to the surface of the substrate than a top surface of the single crystal semiconductor thin film. A second conductive electrode is formed on the single crystal semiconductor thin film. A second conductive side metal layer is connected to the second conductive electrode. The second conductive side metal layer is closer to the surface of the substrate than the top surface of the single crystal semiconductor thin film.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: October 21, 2014
    Assignee: Oki Data Corporation
    Inventor: Mitsuhiko Ogihara
  • Patent number: 8860067
    Abstract: A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode.
    Type: Grant
    Filed: December 5, 2011
    Date of Patent: October 14, 2014
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Yusuke Yokobayashi, Satoshi Tanaka, Tatsuma Saito
  • Patent number: 8860065
    Abstract: An embodiment of the invention discloses an optoelectronic semiconductor device. The optoelectronic semiconductor comprises a unit having a plurality of electrical connectors with top surfaces; an insulating material surrounding each of the plurality of electrical connectors, wherein each of the top surfaces are exposed through the insulating material; a semiconductor system, having a side surface directly covered by the insulation material, electrically connected to the plurality of electrical connectors and being narrower in width than both of the unit and the insulating material; an electrode formed on the semiconductor system at a position not corresponding to the plurality of electrical connectors; and a layer provided on the semiconductor system at a side opposite to the electrode and configured to laterally exceed outside more than one outermost boundary of the plurality of electrical connectors.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: October 14, 2014
    Assignee: Epistar Corporation
    Inventors: Chih-Chiang Lu, Wei-Chih Peng, Shiau-Huei San, Min-Hsun Hsieh
  • Patent number: 8853719
    Abstract: Provided are a semiconductor light-emitting device and a light-emitting device package having the same. The semiconductor light-emitting device comprises a light-emitting structure, a first electrode unit, and a second electrode layer. The light-emitting structure comprises a plurality of compound semiconductor layers having a rounded side surface at an outer edge. The first electrode unit is disposed on the light-emitting structure. The second electrode layer is disposed under the light-emitting structure.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: October 7, 2014
    Assignee: LG Innotex Co., Ltd.
    Inventor: Hyung Jo Park
  • Patent number: 8847267
    Abstract: The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: September 30, 2014
    Assignee: Korea Photonics Technology Institute
    Inventors: Sang Mook Kim, Jong Hyeob Baek, Gang Ho Kim, Jung-In Kang, Hong Seo Yom, Young Moon Yu
  • Patent number: 8847271
    Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: September 30, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Katsuno, Satoshi Mitsugi, Toshihide Ito, Shinya Nunoue
  • Patent number: 8847266
    Abstract: There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
    Type: Grant
    Filed: January 3, 2008
    Date of Patent: September 30, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Pun Jae Choi, Ki Yeol Park, Sang Bum Lee, Seon Young Myoung, Myong Soo Cho
  • Patent number: 8835937
    Abstract: Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.
    Type: Grant
    Filed: February 18, 2005
    Date of Patent: September 16, 2014
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Ralph Wirth, Herbert Brunner, Stefan Illek, Dieter Eissler
  • Patent number: 8831062
    Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: September 9, 2014
    Assignee: II-VI Laser Enterprise GmbH
    Inventors: Hans-Ulrich Pfeiffer, Andrew Cannon Carter, Jörg Troger, Norbert Lichtenstein, Michael Schwarz, Abram Jakubowicz, Boris Sverdlov
  • Patent number: 8823039
    Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: September 2, 2014
    Assignee: Epistar Corporation
    Inventors: Chien-Fu Shen, Cheng-Ta Kuo, Wei-Shou Chen, Tsung-Hsien Liu, Yi-Wen Ku, Min-Hsun Hsieh
  • Patent number: 8823028
    Abstract: A light emitting device including a conductive support substrate; an electrode layer on the conductive support substrate, and including side portions such that a center upper portion of the electrode layer protrudes upward from the conductive support substrate; a protective layer on the side portions of the electrode layer, the protective layer including an insulating material having a higher resistance than that of the electrode layer and a top surface of the protective layer is in line with a top surface of the protruding center upper portion of the electrode layer; and a light emitting structure including a second conductive semiconductor layer on the electrode layer and at least a portion of the protective layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer.
    Type: Grant
    Filed: July 21, 2009
    Date of Patent: September 2, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jun Suk Park, Deung Kwan Kim, Han Sin
  • Patent number: 8816339
    Abstract: An organic EL display panel includes a substrate; an interlayer insulating layer on the substrate; first electrodes on the interlayer insulating layer to correspond to element formation regions in rows and columns; banks extending in columns to partition the regions in rows; organic light-emitting layers above the first electrodes, and each containing organic light-emitting material having light-emitting color differing between each two adjacent regions in rows; and second electrodes above the light-emitting layers, and being opposite in polarity to the first electrodes, wherein the interlayer insulating layer has first opening corresponding to interval between each two adjacent first electrodes in rows, the banks each have integrally formed buried part and main part, the buried part fills the interval and the first opening, and the main part is protrusion of the buried part and has recess on top thereof along with shapes of the interval and the first opening.
    Type: Grant
    Filed: December 10, 2012
    Date of Patent: August 26, 2014
    Assignee: Panasonic Corporation
    Inventors: Hiroshi Kawamura, Seiji Nishiyama
  • Patent number: 8816386
    Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.
    Type: Grant
    Filed: January 16, 2014
    Date of Patent: August 26, 2014
    Assignee: Epistar Corporation
    Inventors: Tzer-Perng Chen, Jen-Chau Wu, Chuan-Cheng Tu, Yuh-Ren Shieh
  • Patent number: 8810010
    Abstract: An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the other side, and a bump connected with the through silicon via.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: August 19, 2014
    Assignee: SK Hynix Inc.
    Inventor: Jae Bum Kim
  • Patent number: 8803181
    Abstract: A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided.
    Type: Grant
    Filed: October 10, 2008
    Date of Patent: August 12, 2014
    Assignee: Rohm Co., Ltd.
    Inventors: Masakazu Takao, Kazuhiko Senda
  • Patent number: 8791475
    Abstract: A light-emitting diode includes a first electrode, a conductive substrate layer, a reflective layer, a first electrical semiconductor layer, a active layer, a second electrical semiconductor layer, and at least one second electrode. The conductive substrate layer is formed on the first electrode. The reflective layer is formed on the conductive substrate layer. The first electrical semiconductor layer is formed on the reflective layer. The active layer is formed on the first electrical semiconductor layer. The second electrical semiconductor layer is formed on the active layer. The at least one second electrode is formed on the second electrical semiconductor layer. At least one third electrode is additionally disposed under the second electrical semiconductor layer. At least one connection channel is disposed between the second electrode and the third electrode, so that the second electrode and the third electrode are electrically connected.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: July 29, 2014
    Assignee: RGB Consulting Co., Ltd.
    Inventor: Chuan-Cheng Tu
  • Patent number: 8791481
    Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.
    Type: Grant
    Filed: April 1, 2009
    Date of Patent: July 29, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • Patent number: 8779457
    Abstract: An electrode structure includes at least two first electrodes and at least two second electrodes configured to be electrically connected in parallel to a power supply. Each of the first electrodes includes at least one first pad and at least one first extending wire with one end connected to the first pad, and the at least two first electrodes are spaced apart from each other. Each of the second electrodes includes at least one second pad and at least one second extending wire with one end connected to the second pad, and the at least two second electrodes are spaced apart from each other.
    Type: Grant
    Filed: January 5, 2010
    Date of Patent: July 15, 2014
    Assignee: Huga Optotech Inc.
    Inventors: Tai Chun Wang, Wei Chih Wen
  • Patent number: 8772815
    Abstract: A semiconductor light emitting device has a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and a nitride semiconductor layer on side surfaces of the second conductive semiconductor layer along an outer periphery of the second conductive semiconductor layer. An ohmic layer directly contacts the second conductive semiconductor layer and the nitride semiconductor layer.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: July 8, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Patent number: 8772819
    Abstract: A multi-layer array type LED device is provided, which includes a substrate, an encapsulation body, two lead frames, a plurality of LED dices, and a set of optical lens. The outer circumferential edge and the upper and lower periphery of the substrate are completely encapsulated by the encapsulation body so that the multi-layer array type LED device can be tightly packaged. In the present invention, a fluorescent layer is disposed between an optical grease layer and a silica gel protection layer, and thereby the fluorescent layer is protected, and is capable of preventing moisture from permeating therein. On the other hand, in the present invention, the reflection coefficient of the optical grease layer is at least larger than a certain value so that the probability of the light emitted out of the optical chamber can be increased.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: July 8, 2014
    Assignee: Gem Weltronics TWN Corporation
    Inventors: Jon-Fwu Hwu, Yung-Fu Wu, Kui-Chiang Liu
  • Patent number: 8766312
    Abstract: A light-emitting device includes a light-emitting element and a support substrate. The light-emitting element has an insulating layer and first and second vertical conductors passing through the insulating layer. The support substrate has a substrate part and first and second through electrodes and is disposed on the insulating layer. The first through electrode passes through the substrate part with one end connected to an opposing end of the first vertical conductor, while the second through electrode passes through the substrate part with one end connected to an opposing end of the second vertical conductor. The opposing ends of the first and second vertical conductors are projected from a surface of the insulating layer and connected to the ends of the first and second through electrode inside the support substrate.
    Type: Grant
    Filed: October 19, 2011
    Date of Patent: July 1, 2014
    Assignee: Napra Co., Ltd.
    Inventors: Shigenobu Sekine, Yurina Sekine, Yoshiharu Kuwana, Kazutoshi Kamibayashi
  • Patent number: 8766310
    Abstract: According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: July 1, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Akihiro Kojima
  • Patent number: 8766294
    Abstract: A semiconductor light-emitting device has a first principal surface, a second principal surface formed on a side opposite to the first principal surface, and a light-emitting layer. A p-electrode on the second principal surface is in the region of the light-emitting layer and surrounds an n-electrode. An insulating layer on the side of the semiconductor layer surrounds the p- and the n-electrodes. A p-metal pillar creates an electrical connection for the p-electrode, and an n-metal pillar creates an electrical connection for the n-electrode. A resin layer surrounds the end portions of the p- and the n-metal pillars, and also covers the side surface of the semiconductor layer, the second principal surface, the p-electrode, the n-electrode, the insulating layer, the p-metal pillar and the n-metal pillar.
    Type: Grant
    Filed: December 6, 2012
    Date of Patent: July 1, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Keisuke Unosawa
  • Patent number: 8766311
    Abstract: According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: July 1, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Taisuke Sato, Shigeya Kimura, Kotaro Zaima, Koichi Tachibana, Shinya Nunoue
  • Patent number: 8759128
    Abstract: A light emitting diode (LED) die includes a semiconductor substrate having an n-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the n-type confinement layer configured to emit electromagnetic radiation, a p-type confinement layer in electrical contact with the multiple quantum well (MQW) layer; multiple light extraction structures on the n-type confinement layer configured to scatter the electromagnetic radiation; and an electrode in a recess embedded in the n-type confinement layer proximate to the light extraction structures. A method of fabrication includes: forming the semiconductor substrate; forming a recess in the n-type confinement layer having sidewalls and a planar bottom surface; forming an electrode in the recess comprising a conductive material conforming to the sidewalls and to the bottom surface of the recess; planarizing the electrode; and forming a plurality of light extraction structures in the n-type confinement layer proximate to the electrode.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: June 24, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Jiunn-Yi Chu, Trung Tri Doan
  • Patent number: 8759869
    Abstract: A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: June 24, 2014
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Tae Won Seo, Zhbanov Alexander, Dae Won Kim
  • Patent number: 8759842
    Abstract: The invention relates to a semiconductor device and a method for manufacturing the semiconductor device, which includes: an insulating film over a substrate; a first pixel electrode embedded in the insulating film; an island-shaped single-crystal semiconductor layer over the insulating film; a gate insulating film and a gate electrode; an interlayer insulating film which covers the island-shaped single-crystal semiconductor layer and the gate electrode; a wiring which electrically connects a high-concentration impurity region and the first pixel electrode to each other; a partition which covers the interlayer insulating film, the island-shaped single-crystal semiconductor layer, and the gate electrode and has an opening in a region over the first pixel electrode; a light-emitting layer formed in a region which is over the pixel electrode and surrounded by the partition; and a second pixel electrode electrically connected to the light-emitting layer.
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: June 24, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kengo Akimoto