Abstract: The invention relates to a semiconductor device and a method for manufacturing the semiconductor device, which includes: an insulating film over a substrate; a first pixel electrode embedded in the insulating film; an island-shaped single-crystal semiconductor layer over the insulating film; a gate insulating film and a gate electrode; an interlayer insulating film which covers the island-shaped single-crystal semiconductor layer and the gate electrode; a wiring which electrically connects a high-concentration impurity region and the first pixel electrode to each other; a partition which covers the interlayer insulating film, the island-shaped single-crystal semiconductor layer, and the gate electrode and has an opening in a region over the first pixel electrode; a light-emitting layer formed in a region which is over the pixel electrode and surrounded by the partition; and a second pixel electrode electrically connected to the light-emitting layer.

Abstract: A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.

Abstract: A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.

Abstract: A semiconductor light emitting device includes a first semiconductor layer having a bottom surface with uneven patterns, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, a second electrode formed on the second semiconductor layer, and a first electrode formed under the first semiconductor layer.

Abstract: A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer.

Abstract: A light emitting device based on a AlInGaN materials system wherein a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2. In a preferred embodiment the coating is made from Ta2O5, Nb2O5, TiO2, or SiC and has a thickness between about 0.01 and 10 microns. A surface of a coating material may be textured or shaped to increase its surface area and improve light extraction. A surface of the coating material can also be shaped to engineer the directionality of light escaping the layer. A coating can be applied directly to a surface or multiple surfaces of a light emitting device or can be applied onto a contact material. A coating may also serve as a passivation or protection layer for a device.

Abstract: A light emitting device is provided. A light emitting device that includes a substrate, a first electrode, a passivation layer, a second electrode, and a light emitting layer is provided. The first electrode is disposed on the substrate and includes a first patterned conductive layer. The first patterned conductive layer includes an alloy containing a first metal and a second metal. The passivation layer is at least disposed on a side surface of the first electrode and includes a compound of the second metal. Here, a work function of the compound of the second metal ranges from about 4.8 to about 5.5. The second electrode is disposed on the first electrode. The light emitting layer is disposed between the first electrode and the second electrode.

Abstract: An LED package includes a substrate, an electrode layer, a light-emitting chip, a reflection cup and an encapsulation. The substrate includes a first surface, an opposite second surface, and two side surfaces. The electrode layer is consisted of a positive electrode and a negative electrode, each of which extends from the first surface to the second surface via a respective side surface. The light-emitting chip is located on the first surface of the substrate and electrically connected to the electrode layer. The reflection cup comprises a first part covering the electrode layer on the side surfaces of the substrate, a second part with a bowl-like shape on the first surface of the substrate and surrounding the light-emitting chip. The encapsulation is filled in the second part of the reflection cup.

Abstract: A light emitting device including a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a reflective layer under the substrate and including a light reflection pattern configured to reflect light emitted by the active layer in directions away from the reflective layer.

Abstract: A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.

Abstract: A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.

Abstract: A semiconductor light emitting device has a multilayer epitaxial structure for emitting light by a light emitting layer located between a first conductive layer and a second conductive layer. The multilayer epitaxial structure can be grown directly on a base substrate. A reflective layer can be provided in the multilayer epitaxial structure between the base substrate and the first conductive layer. A distributive Bragg reflector can be positioned adjacent the substrate. A surface of the multilayer epitaxial structure can be conformed to provide improved light extraction. A phosphorus film encapsulates the multilayer epitaxial structure and its respective side surfaces.

Abstract: An electronic device includes: a substrate; a lower electrode which is provided on the substrate and has an edge portion cross-section having a taper angle of 60° or less; a SiO2 film which is provided on the lower electrode, the SiO2 film including hydrogen atoms in a ratio of 3 atomic % or less, and having a refractive index n of 1.475 or less at a wavelength of 650 nm; and an upper electrode which is provided on the SiO2 film and has an overlapping portion with the lower electrode.

Abstract: A light emitting device (LED) and Package of the same are provided. The LED comprises a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a first dielectric layer, and a first electrode layer. The first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are on a substrate. The first dielectric layer covers the edges of the second conductivity type semiconductor layer and the active layer. The first electrode layer covers the edge of the first conductivity type semiconductor layer.

Abstract: A light emitting diode (LED) is revealed. The LED includes a substrate, a first-type-doped layer, a light emitting layer, a second-type-doped layer, a plurality of first grooves, a second groove, an insulation layer, a first contact, and a second contact. The LED features that the second groove is connected to one end of each first groove and penetrates the second-type-doped layer and the light emitting layer to expose a part of the first-type-doped layer. The contact area between the first contact and the first-type-doped layer is increased. Therefore, the LED is worked at high current densities without heat accumulation. Moreover, the light emitting area is not reduced and the light emitting efficiency is not affected. The LED is flipped on a package substrate to form a flip-chip LED package.

Abstract: A Group III nitride semiconductor light-emitting device exhibiting reduced contact resistance between a p contact layer and an ITO electrode. The Group III nitride semiconductor light-emitting device has an AlGaN dot-like structure on the p contact layer, and an ITO electrode on the p contact layer and the dot-like structure. The dot-like structure has a structure in which a plurality of AlGaN dots are discretely distributed on the top surface of the p contact layer. The dot-like structure is bonded to oxygen, and oxygen increases on an interface between the p contact layer and the ITO electrode.

Abstract: In accordance with the present invention, there is provided multiple embodiments of a concentrated photovoltaic receiver package or module. In each embodiment of the present invention, the module comprises a leadframe including a first section and a second section disposed in spaced relation to each other. Mounted to the first section of the leadframe is a receiver die. The receiver die is electrically connected to both the first and second sections of the leadframe. In one embodiment of the present invention, the receiver die is electrically connected to the second section of the leadframe by a plurality of conductive wires. In another embodiment of the present invention, the receiver die is electrically connected to the second section of the leadframe by a conductive bonding material. Portions of the leadframe may optionally be covered by a molded body which can be used to define an alignment feature for a light concentrating device such as a light guide or optical rod.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure disposed under an insulating layer having a plurality of holes. A first electrode is disposed on the insulating layer and a second electrode disposed is disposed under the light emitting structure. A conductive supporting member is disposed under the second electrode. The plurality of contact protrusions are disposed in the holes of the insulating layer and include filler connected to the first conductive semiconductor layer and disposed in the plurality of holes. The conductive supporting member physically contacts with the second electrode and has a thickness thicker than that of the insulating layer. The first electrode is located at a higher position than an entire region of the insulating layer and the insulating layer is located at a higher position than an entire region of the light emitting structure.

Abstract: An organic electroluminescence display unit including: a lower electrode for each device; a first hole injection/transport layer provided on the lower electrode for each device; a second organic light emitting layer of the first color provided on the first hole injection/transport layer for the second organic electroluminescence device; a second hole injection/transport layer provided on the entire surfaces of the second organic light emitting layer and the first hole injection/transport layer for the first organic electroluminescence device, and being made of a low molecular material; a blue first organic light emitting layer provided on the entire surface of the second hole injection/transport layer; and an electron injection/transport layer having at least one of electron injection characteristics and electron transport characteristics, and an upper electrode that are provided in sequence on the entire surface of first organic light emitting layer.

Abstract: An organic electroluminescence display unit including: a lower electrode for each device; a first hole injection/transport layer provided on the lower electrode for each device; a second organic light emitting layer of the first color provided on the first hole injection/transport layer for the second organic electroluminescence device; a second hole injection/transport layer provided on the entire surfaces of the second organic light emitting layer and the first hole injection/transport layer for the first organic electroluminescence device, and being made of a low molecular material; a blue first organic light emitting layer provided on the entire surface of the second hole injection/transport layer; and an electron injection/transport layer having at least one of electron injection characteristics and electron transport characteristics, and an upper electrode that are provided in sequence on the entire surface of first organic light emitting layer.

Abstract: A semiconductor light emitting device includes: first and second conductive type semiconductor layers; an active layer disposed between the first and second conductive type semiconductor layers; and first and second electrodes disposed on one surface of each of the first and second conductive type semiconductor layers, respectively, wherein at least one of the first and second electrodes includes a pad part and a finger part formed to extend from the pad part, and the end of the finger part has an annular shape. Because a phenomenon in which current is concentrated in a partial area of the finger part is minimized, tolerance to electrostatic discharge (ESD) can be strengthened and light extraction efficiency can be improved.

Abstract: A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.

Abstract: In a thin-film transistor (TFT) substrate, a gate insulating layer is disposed on a gate electrode electrically connected to a gate line. A semiconductor layer is disposed on the gate insulating layer. A source electrode is electrically connected to a data line that intersects the gate line. A drain electrode faces the source electrode and defines a channel area of a semiconductor layer. An organic layer is disposed on the data line and has a first opening exposing the channel area. An inorganic insulating layer is disposed on the organic layer. A pixel electrode is disposed on the inorganic insulating layer and electrically connected to the drain electrode. The inorganic insulating layer covers the first opening, and thickness of the inorganic insulating layer is substantially uniform.

Abstract: A light emitting device according to the embodiment includes a substrate; a buffer layer over the substrate; an electrode including a perforation pattern through top and bottom surfaces of the electrode over the buffer layer; a first semiconductor layer over the electrode; an active layer over the first semiconductor layer; and a second semiconductor layer over the active layer. The first semiconductor layer extends onto a top surface of the perforation pattern by passing through the perforation pattern while making contact with the buffer layer.

Abstract: To provide a light-emitting device having a top-emission structure with low power consumption. A convex structure body is formed over a substrate to be provided with an organic EL element, and then an upper electrode layer is formed. Thus, the upper electrode layer has a shape following the convex shape. In addition, a conductive layer is formed over a substrate sealing an organic EL layer. Then, by sealing a surface where the upper electrode layer is formed and a surface where the conductive layer is formed are sealed to face each other, at least part of the electrode layer overlapped with the convex structure body is in contact with the conductive layer, so that the resistivity of the upper electrode layer is significantly reduced. Thus, power consumption of a light-emitting element can be reduced.

Abstract: Solid-state transducers (“SSTs”) and SST arrays having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a first contact at the first side and electrically coupled to the first semiconductor material, and a second contact extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. A carrier substrate having conductive material can be bonded to the first and second contacts.

Abstract: Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a light emitting structure including a first conductive type semiconductor layer, an active layer over the first conductive type semiconductor layer, and a second conductive type semiconductor layer over the active layer; a dielectric layer formed in each of a plurality of cavities defined by removing a portion of the light emitting structure; and a second electrode layer over the dielectric layer.

Abstract: To provide a light-emitting device from which uniform light emission can be obtained by providing an auxiliary wiring; a light-emitting device in which a short circuit between electrodes or between an electrode and an auxiliary wiring, which is attributed to a step caused by the auxiliary wiring, hardly occurs; and a light-emitting device which has high reliability by preventing a short circuit. In an EL light-emitting device including an auxiliary wiring, by covering a step caused by the auxiliary wiring is covered with an insulator, a short circuit between electrodes or between an electrode and the auxiliary wiring, which is attributed to the step caused by the auxiliary wiring, is prevented. Thus, the above objects are achieved.

Abstract: The invention relates to a substantially transparent electronic device comprising a first contact surface provided with a first pattern of electrically conductive lines and a second contact surface provided with a second pattern of electrically conductive lines, the first contact surface extending parallel to the second contact surface, wherein the first pattern is rotationally displaced with respect to the second pattern by an angle between 15 and 165 degrees. The electrically conductive lines of the said first pattern and the said second pattern are substantially not transparent for visible light and are preferably used as shunting lines. The invention further relates to a method of manufacturing such device.

Abstract: The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.

Abstract: Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.

Abstract: An LED light module free of jumper wires has a substrate and multiple LED chips. The substrate has a positive side circuit, a negative side circuit, multiple first chip connection portions and multiple second connection portions. The first and second chip connection portions are respectively connected to the positive and negative side circuits, and are juxtaposedly and alternately arranged on the substrate so that a width between each first chip connection portion and a corresponding second chip connection portion is smaller than a width of each LED chip. Each LED chip can be directly mounted on corresponding first and second chip connection portions to electrically connect to the positive and negative side circuits. Accordingly, jumper wires for connecting the LED chips and the positive and negative side circuits can be removed to avoid broken jumper wires occurring when the LED light module is shipped or assembled.

Abstract: A method of manufacturing an ohmic contact layer and a method of manufacturing a top emission type nitride-based light emitting device having the ohmic contact layer are provided. The method of manufacturing an ohmic contact layer includes: forming a first conductive material layer on a semiconductor layer; forming a mask layer having a plurality of nano-sized islands on the first conductive material layer; forming a second conductive material layer on the first conductive material layer and the mask layer; and removing the portion of the second conductive material on the islands and the islands through a lift-off process using a solvent. The method ensures the maintenance of good electrical characteristics and an increase of the light extraction efficiency.

Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.

Abstract: A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.

Abstract: The present invention provides a pixel structure including a substrate, a patterned electrode disposed on the substrate, a first insulating layer disposed on the patterned electrode, a common electrode disposed on the first insulating layer, a second insulating layer disposed on the common electrode, and a drain disposed on the second insulating layer. The first insulating layer has a first through hole, and the second insulating layer has a second through hole. The drain includes a first portion electrically connected to the patterned electrode via the first through hole and the second through hole, and a second portion extending onto the common electrode. The common electrode is coupled with the patterned electrode to form a first storage capacitor and is coupled with the second portion to form a second storage capacitor.

Abstract: A light emitting device according to an embodiment includes a second electrode layer comprising at least one projection part; at least one current blocking layer on the projection part of the second electrode layer; a second conductive type semiconductor layer on the second electrode layer and the current blocking layer; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the current blocking layer in a vertical direction.

Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

Abstract: A method for manufacturing an optoelectronic apparatus includes attaching bottom surfaces of first and second packaged optoelectronic semiconductor devices (POSDs) to a carrier substrate (e.g., a tape) so that there is a space between the first and second POSDs. An opaque molding compound is molded around portions of the first and second POSDs attached to the carrier substrate, so that peripheral surfaces of the first POSD and the second POSD are surrounded by the opaque molding compound, the space between the first and second POSDs is filled with the opaque molding compound, and the first and second POSDs are attached to one another by the opaque molding compound. The carrier substrate is thereafter removed so that electrical contacts on the bottom surfaces of the first and second POSDs are exposed. A window for each of the POSDs is formed during the molding process or thereafter.

Abstract: A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.

Abstract: A method for manufacturing a thin film transistor array panel, including: sequentially forming a first silicon layer, a second silicon layer, a lower metal layer, and an upper metal layer on a gate insulating layer and a gate line; forming a first film pattern on the upper metal layer; forming a first lower metal pattern and a first upper metal pattern that includes a protrusion, by etching the upper metal layer and the lower metal layer; forming first and second silicon patterns by etching the first and second silicon layers; forming a second film pattern by ashing the first film pattern; forming a second upper metal pattern by etching the first upper metal pattern; forming a data line and a thin film transistor by etching the first lower metal pattern and the first and second silicon patterns; and forming a passivation layer and a pixel electrode on the resultant.

Abstract: A light-emitting diode has a metal mesh pattern formed on an active layer without a transparent oxide conductive layer formed in between is disclosed. The mesh pattern is formed by using ion bombardment a metal layer so that myriad pits formed into the exposed portion of the active layer served as light emitting centers.

Abstract: Provided are a light emitting diode (LED) using a Si nanowire as an emission device and a method of fabricating the same. The LED includes: a semiconductor substrate; first and second semiconductor protrusions disposed on the semiconductor substrate to face each other; a semiconductor nanowire suspended between the first and second semiconductor protrusions; and first and second electrodes disposed on the first and second protrusions, respectively.

Abstract: An LED (light emitting diode) includes a seat and an LED chip. The seat includes a main body, and a first electrode and a second electrode formed on the main body. The LED chip includes a first semiconductor layer, an annular light-emitting layer encircling the first semiconductor layer, and an annular second semiconductor layer encircling the light-emitting layer. The first electrode electrically connects with the first semiconductor layer, and the second electrode electrically connects with the second semiconductor layer.

Abstract: A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.

Abstract: A backlight film includes a flexible substrate with a first electrode layer, a polymeric light emitting layer, a second electrode layer and a protection layer formed subsequently on the flexible substrate. The first electrode layer, the polymeric light emitting layer and the second electrode layer each has a predetermined pattern. The backlight film further includes an insulating layer arranged around the polymeric light emitting layer. A method and an apparatus for forming the backlight film are also provided.

Abstract: The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.

Abstract: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a contact on one of the first or second semiconductor materials. The contact includes a first conductive material and a plurality of contact elements in contact with one of the first or second conductive materials. The contact elements individually include a portion of a second conductive material that is different from the first conductive material.