Abstract: An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.

Abstract: A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, a patterned sacrificial layer is utilized to form a self-aligned metallization stack and is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes.

Abstract: A light emitting diode (LED) package includes a substrate, a first LED chip and a second LED chip. The substrate includes first to fourth electrodes, and an interconnection electrode. A mounting area is defined at center of a top surface of the substrate. The first to fourth electrodes are respectively in four corners of the substrate out of the mounting area. The first interconnection electrode is embedded in the substrate to electrically connect the first and the third electrodes. The first LED chip and the second LED chip are arranged in the mounting area. Each LED chip includes an anode pad and a cathode pad. The first to fourth electrodes are respectively connected to the four pads of the first and the second LED chips via a plurality of metal wires, and no metal wire connection is formed between the first and the second LED chips.

Abstract: According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base body, first and second substrate electrodes. The connection member electrically connects the conductive member to the substrate electrode. The conductive member is electrically connected to the light emitting unit electrode and includes first and second columnar portions provided on the second major surface. The sealing member covers side surfaces of the first and the second conductive members. The optical layer is provided on the first major surface of the semiconductor stacked body and includes a wavelength conversion unit. A surface area of the second substrate electrode is not less than 100 times a cross-sectional area of the second columnar portion.

Abstract: According to one embodiment, a light emitting device includes a substrate, a light emitting element and connectors. The substrate has a surface and a back face, and power supply terminals are formed on the surface. The light emitting element is mounted on the surface of the substrate. The connector includes a contact portion coming into contact with the power supply terminal on the surface side of the substrate and a connector terminal having a wire connection portion projecting on the back face side of the substrate, and a power supply wire is connected to the wire connection portion of the connector terminal.

Abstract: According to one embodiment, an illumination apparatus includes an LED (Light Emitting Diode) module, a light guide plate, and a support body. The support body supports the LED module and the light guide plate. A reflective surface of the support body is provided between a portion supporting the LED module and a portion supporting the light guide plate. The reflective surface is reflective with respect to the light emitted from the LED package. The LED module is tilted relative to the reflective surface with the LED package mounting surface being toward the reflective surface. An angle between the LED module and the reflective surface is less than 90°.

Abstract: A method for manufacturing an optoelectronic apparatus includes attaching bottom surfaces of first and second packaged optoelectronic semiconductor devices (POSDs) to a carrier substrate (e.g., a tape) so that there is a space between the first and second POSDs. An opaque molding compound is molded around portions of the first and second POSDs attached to the carrier substrate, so that peripheral surfaces of the first POSD and the second POSD are surrounded by the opaque molding compound, the space between the first and second POSDs is filled with the opaque molding compound, and the first and second POSDs are attached to one another by the opaque molding compound. The carrier substrate is thereafter removed so that electrical contacts on the bottom surfaces of the first and second POSDs are exposed. A window for each of the POSDs is formed during the molding process or thereafter.

Abstract: A housing for an optoelectronic component comprises a housing body and first and second electrical terminal strips. The first and second terminal strips extend in part inside the housing body and are guided out of the housing body at a first side face. Outside the housing body the two terminal strips are bent in such a way that they comprise a first portion extending at an angle to the first side face, and a second portion (11d, 12d) extending along and spaced from the first side face. A method for producing such a housing is also described.

Abstract: The present invention relates to an LED light source and a corresponding backlight module. The LED light source includes a bar-shaped base and multiple LED assemblies. The LED assemblies each has an LED leadframe, a light-emitting chip, an anode bonding pad and a cathode bonding pad. The anode and cathode bonding pads are connected to the light-emitting chip and mounted on a bottom of the LED leadframe. By mounting the electrodes of the LED assembly on the bottom of the LED leadframe, the LED light source and the corresponding backlight module of the present invention prevents a technical problem that the electrodes of LED assemblies are easy to become short-circuited.

Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.

Abstract: Disclosed is a light emitting device including, a second electrode layer, a light emitting structure that includes a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer and that is provided on the second electrode layer, a first electrode layer that includes a pad part and an electrode part connected to the pad part and that is provided on the light emitting structure, and a current blocking layer arranged between the second electrode layer and the light emitting structure in such a way that a part of the current block layer overlaps to correspond to the first electrode layer, wherein a width of the current blocking layer corresponding to the electrode part is different depending upon a clearance with the pad part.

Abstract: For integration of light-emitting elements and for suppression of a voltage drop, plural stages of light-emitting element units provided over a substrate having an insulating surface and each including a plurality of light-emitting elements which is connected in parallel are connected in series. Further, besides a lead wiring with a large thickness, a plurality of auxiliary wirings with different widths and different thicknesses is used, and the arrangement of the wirings, electrodes of the light-emitting elements, and the like is optimized. Note that in the lighting device, light emitted from the light-emitting element passes through the substrate having an insulating surface and then is extracted.

Abstract: An LED package structure comprises an LED chip and a fuse electrically connected to the LED chip in series. The fuse has a low melting point such that the fuse melts under a high current to form an open circuit to prevent the high current from flowing through the LED chip.

Abstract: A light emitting diode package includes a base having a first surface, an electrode portion attached to the base, a pair of inner electrodes disposed on the first surface, a pair of outer electrodes, a pair of conductive pillars, a light emitting diode die, and a cap layer. Each outer electrode includes an end surface section and a side surface section. The end surface sections are disposed, corresponding to the inner electrodes, on the second surface. Each side surface section extends onto the side surface of the electrode portion. The conductive pillar penetrates between the inner electrode and the outer electrode. The light emitting diode die is on the first surface, electrically connecting the inner electrode. The cap layer covers the light emitting diode die.

Abstract: The present invention provides an LED light with electrostatic protection and a backlight module using the LED light. The LED light includes a carrying frame, a light-emitting die mounted in the carrying frame, and an encapsulation resin encapsulating the light-emitting die in the carrying frame. The carrying frame includes a frame body, first and second copper foils mounted in the frame body, and a first conductive metal plate mounted in the frame body. The first and second copper foils are respectively and electrically connected by two gold wires to the light-emitting die. The first conductive metal plate is arranged to space from the first or second copper foil, whereby an electrical capacitor is formed between the first or second copper foil and the first conductive metal plate. The present invention effectively prevents burnout of gold wires caused by static electricity.

Abstract: The present invention relates to an LED device, which includes a metallic frame, an LED chip, and a packaging body. The metallic frame includes a first lead frame and a second lead frame. The first lead frame has a protruding portion extending toward the second lead frame, while the second lead frame has a notch formed correspondingly to the protruding portion. An electrically insulated region is cooperatively defined by the first and second lead frames. The metallic frame defines at least one blind hole in proximate to the electrically insulated region. The LED chip is electrically connected to the first and second lead frames. The packaging body has a base portion encapsulating the metallic frame and a light-permitting portion arranged above the LED chip.

Abstract: A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.

Abstract: Light-emitting devices are provided, the light-emitting devices include a light-emitting structure layer having a first conductive layer, a light-emitting layer and a second conductive layer sequentially stacked on a first of a substrate, a plurality of seed layer patterns formed apart each other in the first conductive layer; and a plurality of first electrodes formed through the substrate, wherein each of the first electrodes extends from a second side of the substrate to each of the seed layer patterns.

Abstract: A packaged optoelectronic device and a method for manufacturing is provided. The packaged optoelectronic device includes at least one optoelectronic device with two electrodes sandwiched between a first barrier layer and a second barrier layer. At least one of the barrier layers comprises at least one aperture. Further, the packaged device includes a plurality of thin electrically conductive connectors. Each of the thin connectors extends out through the at least one aperture and is coupled to the anode or the cathode. Further, the thin connectors are connected to an external power source to provide power to the anode and the cathode.

Abstract: A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

Abstract: A mounting device for a light emitting diode (LED) includes an LED and a conductor connecting to the LED. The LED includes two electrode leads bending outward and each electrode lead has a distal end. A protrusion is formed from the bottom surface of the distal end. The conductor has two electrode boards. A mounting leadframe is formed and protrudes from the surface of each electrode board and corresponds to one of the electrode leads, and a mounting hole is formed in each electrode board at a position corresponding to one of the protrusions. In addition, the distal end of each electrode lead is inserted respectively into the corresponding mounting leadframe, and each protrusion engages the corresponding mounting hole. With the insertion of the LED into the conductor and the engagements between protrusions and mounting holes, the LED is securely and stably mounted on the conductor.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.

Abstract: A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.

Abstract: A manufacturing method of a substrate for a semiconductor element, wherein a first step includes: forming a first and second photosensitive resin layer on a first and second surface of a metal plate, respectively; forming a first and second resist pattern on the first and second surface, for forming a connection post and a wiring pattern, respectively. A second step includes: forming the connection post and wiring pattern; filling in a premold liquid resin to the first surface which was etched; forming a premold resin layer by hardening the premold liquid resin; performing a grinding operation on the first surface, and exposing an upper bottom surface of the connection post from the premold resin layer. A groove structure is formed by the first and second steps, wherein a depth of the groove is up to an intermediate part in a thickness direction of the metal plate.

Abstract: A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.

Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.

Abstract: A semiconductor light emitting module is provided with a supporting conductor including a die bonding pad, and with a plurality of semiconductor light emitting elements bonded to the die bonding pad. The semiconductor light emitting elements are arranged in series along an arrangement line extending in a first direction. The die bonding pad includes a portion overlapping alternative die-bonding positions which are symmetrical to positions of the bonded semiconductor light emitting elements with respect to a line of symmetry extending in a second direction different from the first direction.

Abstract: Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer is partially exposed; a first region having a first concentration and provided at a region of the second conductive type semiconductor layer; a second region having a second concentration and provided at another region of the second conductive type semiconductor layer; and a second electrode over the second conductive type semiconductor layer.

Abstract: A packaging structure for plural bare chips includes a substrate, a plurality of bare light-emitting chips, and a transparent light guide. The substrate has a supporting surface. The bare light-emitting chips are disposed on the supporting surface of the substrate. The transparent light guide covers and seals up the bare light-emitting chips, with a side of the transparent light guide facing away from the supporting surface forming a light-outputting layer with a light gathering member. Alternatively, a reflective layer can be arranged on the supporting surface and covered by the transparent light guide. Accordingly, a packaging structure for plural bare chips with high illuminous efficiency, high heat-dissipating efficiency, and low cost of manufacture is provided.

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.

Abstract: A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.

Abstract: An LED manufacturing method includes the steps of forming a first insulator film on a semiconductor layer, forming a laminated body including a mask layer and an electrode on the first insulator film, forming a second insulator film to cover the laminated body and a first region of the first insulator film where a laminated body is not formed, anisotropic etching the second insulator film to expose the top surface of the mask layer and a second region of the first insulator film, exposing the surface of a semiconductor layer by removing the first insulator film while keeping the first insulator film between the laminated body and the semiconductor layer, removing the mask layer, and forming a clear conducting layer on top of the exposed surface of the semiconductor layer and the electrode.

Abstract: Mosaic devices including an apparatus includes at least one electroluminescence (EL) device and a system substrate. The at least one EL device can be configured to be coupled mechanically and electrically to the system substrate. The system substrate can be configured to receive the at least one EL device at a non-discrete location or orientation. The system substrate can be a smart system substrate configured to automatically identify a device type. The EL device can be an area-emitting device such as an organic light emitting diode (OLED) device.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a plurality of compound semiconductor layers that includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. An electrode is formed on the compound semiconductor layers. A groove is formed at an upper portion of the compound semiconductor layers. An electrode layer is formed under the compound semiconductor layers.

Abstract: Provided are a light emitting device and a lighting system having the same. The light emitting device includes: a plurality of metal layers spaced to each other; a first insulation film disposed on an outer part of a top surface area of the plurality of metal layers and having an open area where a portion of top side of the plurality of metal layers is opened; a light emitting chip disposed on at least one of the plurality of metal layers and electrically connected to other metal layers; and a resin layer on the plurality of metal layers and the light emitting chip.

Abstract: An SMT LED device includes an LED and a circuit board supporting the LED. A pair of first solder pads are formed on the circuit board and spaced from each other. The LED includes two solder slugs extending downwardly from a bottom the LED. A positioning hole is formed at each first solder pad corresponding a position of a corresponding solder slug. A second solder pad is received in the positioning hole. Each solder slug is received in one corresponding positioning hole and electrically connected to corresponding first and second solder pads by a reflow soldering process. The present disclosure also provides a method for manufacturing the SMT LED device.

Abstract: Heat spreading substrate. In an embodiment in accordance with the present invention, an apparatus includes a first conductive layer, a first insulating layer disposed in contact with the first conductive layer and a thermally conductive layer disposed in contact with the first insulating layer, opposite the first conductive layer. The faces of the first conductive layer, the first insulating layer and the thermally conductive layer are substantially co-planar; and a sum of widths of faces of the first conductive layer, the first insulating layer and the thermally conductive layer is greater than a height of the faces. The first conductive layer and the first insulating layer may include rolled materials.

Abstract: Heat spreading substrate with embedded interconnects. In an embodiment in accordance with the present invention, an apparatus includes a metal parallelepiped comprising a plurality of wires inside the metal parallelepiped. The plurality of wires have a different grain structure than the metal parallelepiped. The plurality of wires are electrically isolated from the metal parallelepiped. The plurality of wires may be electrically isolated from one another.

Abstract: A light emitting diode package and a method of fabricating the same. The package includes a light emitting diode chip having a first surface and a second surface opposing the first surface, a metal frame (or TAB tape) having leads connected to the light emitting diode chip, and a light-previous encapsulant encapsulating the light emitting diode chip, wherein the second surface of the chip is exposed from the first light-previous encapsulant. The metal frame (or TAB tape) connects the light emitting diode chip to an external circuit board. The LED package does not need wire-bonding process. A method of fabricating a light emitting diode package is also provided.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The reflective layer may be disposed under the compound semiconductor layer. The conductive support member may be disposed under the reflective layer. The channel layer may be disposed along a bottom edge of the compound semiconductor layer.

Abstract: A point light source includes a light-emitting portion, a first lead and a second lead. The first lead and the second lead are electrically connected to the light-emitting portion. The first lead and the second lead respectively have a wedging portion. The wedging portions can be matched with each other. A light source module using the point light source is also provided. The light source module includes at least one light source assembly. Each light source assembly includes a plurality of the point light sources connected in series. Adjacent two point light sources are wedged to each other in series by a combination of the wedging portions of the adjacent first lead and second lead.

Abstract: The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate.

Abstract: An LED light module free of jumper wires has a substrate and multiple LED chips. The substrate has a positive side circuit, a negative side circuit, multiple first chip connection portions and multiple second connection portions. The first and second chip connection portions are respectively connected to the positive and negative side circuits, and are juxtaposedly and alternately arranged on the substrate so that a width between each first chip connection portion and a corresponding second chip connection portion is smaller than a width of each LED chip. Each LED chip can be directly mounted on corresponding first and second chip connection portions to electrically connect to the positive and negative side circuits. Accordingly, jumper wires for connecting the LED chips and the positive and negative side circuits can be removed to avoid broken jumper wires occurring when the LED light module is shipped or assembled.

Abstract: A light emitting device including a light emitting chip and a magnetic material is provided. The light emitting chip includes a first doped semiconductor layer, a second doped semiconductor layer, and a light emitting semiconductor layer disposed between the first doped semiconductor layer and the second doped semiconductor layer. The magnetic material is disposed beside the light emitting chip, wherein the magnetic material is not disposed on a conducting path of a current causing the light emitting chip to emit light.

Abstract: A lighting device (1;15) comprising at least one flexible printed circuit board (3) which is populated with at least one semiconductor light source, comprising a potting material overlaid on at least one populated side of the printed circuit board so as to leave at least one emission surface of the semiconductor light source (2) exposed; an adhesive element at least partially covering a top side of the semiconductor light source, wherein the adhesive element (7) protrudes partially from the potting compound (10), is enclosed around its sides by the potting compound (10) in an adhesive manner and has better adhesion to the potting compound (10) than does the semiconductor light source.

Abstract: A semiconductor device package including a substrate, first and second solder joints, a die pad, leads and enhancement elements surrounding the die pad, a chip electrically connected to the leads, and a package body encapsulating the chip, portions of the leads, and portions of the enhancement elements, but leaving exposed at least a side surface of each enhancement element. Side surfaces of the enhancement elements and the package body are coplanar. The substrate includes first pads corresponding to the leads and second pads corresponding to the enhancement elements. The first solder joints are disposed between the first pads and the leads. The second solder joints are disposed between the second pads and the enhancement elements. The second solder joints contact side surfaces of the enhancement elements. The surface area of the second pads is greater than the surface area of the corresponding enhancement elements.

Abstract: According to one embodiment, an LED package includes a first lead frame, a second lead frame, an LED chip, a wire, and a resin body. The first lead frame and the second lead frame are arranged with a space between each other. The LED chip is provided above the first lead frame and the second lead frame. The LED chip has a first terminal connected to the first lead frame and a second terminal connected to the second lead frame. The wire connects the first terminal to the first lead frame. The resin body covers the LED chip as well as a top surface, a part of a bottom surface, and a part of an edge surface of each of the first lead frame and the second lead frame. A remaining portion of each of the bottom surfaces and a remaining portion of each of the edge surfaces are exposed.

Abstract: There is provided a light emitting diode package, including a package body including a recess portion having a housing space and a lead frame mounted on the recess portion to be exposed; a light emitting diode chip mounted to be electrically connected to the lead frame; and a position indicator formed on the lead frame and guiding the mounting position of the light emitting diode chip.

Abstract: A light emitting diode (LED) package includes a LED package substrate, first LED chips and second LED chips. The LED package substrate includes a substrate, a first bonding pad, second bonding pads and a third bonding pad. The first, second and third bonding pads are disposed on the substrate. The second bonding pads are arranged in an array. The first and third bonding pads are located adjacent respectively to first and last column of the array. The first LED chips are die-bonded on the first bonding pad and wire-bonded respectively to the second bonding pads arranged in first column of the array. The second LED chips are die-bonded on the second bonding pads respectively. In each row except last column, each second LED chip is wire-bonded to the second bonding pad arranged in next column. The second LED chips located in last column are wire-bonded to the third bonding pad.