Abstract: Wavelength converting light-emitting devices and methods of making the same are provided. In some embodiments, the devices include a phosphor material region designed to convert the wavelength of emitted light.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A compact and efficient LED array lighting component comprising a circuit board with an array of LED chips mounted on it and electrically interconnected. A plurality of primary lenses is included, each of which is formed directly over each LED chip and/or a sub-group of the LED chips. A heat sink is included with the circuit board mounted to the heat sink so that heat from the LED chips spreads into the heat sink. In some embodiments the circuit board can be thermally conductive and electrically insulating. Method of forming an LED component are also disclosed utilizing chip-on-board mounting techniques for mounting the LED chips on the circuit board, and molding of the primary lenses directly over the LED chips individually or in sub-groups of LED chips.

Abstract: A method of forming a sampled grating includes the steps of preparing a substrate; preparing a nano-imprinting mold including a pattern surface on which projections and recesses are periodically formed; preparing a mask including a light obstructing portion and a light transmitting portion that are alternately provided; forming a photoresist layer and a resin portion in that order on the substrate; forming a patterned resin portion having projections and recesses by pressing the pattern surface of the mold into contact with the resin portion and hardening the resin portion while maintaining the contact; exposing a portion of the photoresist layer by irradiating the photoresist layer with exposing light through the mask and the patterned resin portion; forming a patterned photoresist layer by developing the photoresist layer; and etching the substrate using the patterned photoresist layer.

Abstract: An object of the present invention is to realize a numerical aperture higher than that of a pixel having a conventional construction by using a pixel circuit having a novel construction in an electro-optical device. Therefore, it is utilized that the electric potential of a gate signal line in a row except for an i-th row is set to a constant electric potential in a period except for when a gate signal line (106) in the i-th row is selected. A gate signal line 111 in an (i?1)-th row is also used as an electric current supply line for an EL element (103) controlled by the gate signal line (106) in the i-th row. Thus, wiring number is reduced and high numerical aperture is realized.

Abstract: A light emitting diode is provided which includes an active region in combination with a current spreading layer; and a crystalline epitaxial film light extraction layer in contact with the current spreading layer, the light extraction layer being patterned with nano/micro structures which increase extraction of light emitted from the active region.

Abstract: A light emitting structure includes a first hole injection layer, a first organic light emitting layer, a charge generation layer, a second hole injection layer, a second organic light emitting layer, an electron transfer layer, and a blocking member. The light emitting structure has first, second, and third sub-pixel regions. The first organic light emitting layer may be on the first hole injection layer. The charge generation layer may be on the first organic light emitting layer. The second hole injection layer may be on the charge generation layer. The second organic light emitting layer may be on the second hole injection layer. The electron transfer layer may be on the second organic light emitting layer. The blocking member may be at at least one of the first to the third sub-pixel regions.

Abstract: A light-emitting apparatus includes a substrate, at least one light emitting diode (LED) die, a sealant align layer, and a first sealant. The substrate has a die disposing area. The LED die is disposed on the die disposing area. The sealant align layer is disposed on the substrate. The first sealant at least partially covers the LED die and contacts with the sealant align layer. The light-emitting apparatus can avoid the light emitted from the LED die to be blocked and can have higher light efficiency.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A system and method for operating a light emitting device utilizing charged quantum dots is described. In one embodiment, charged quantum dots are suspended in a liquid between an excitation plate and a cover plate. The excitation plate carries short-wave excitation light. Charged quantum dots near the surface of the excitation plate may emit light in response to an evanescent field generated by the short-wave excitation light undergoing total internal reflection within the excitation plate. The excitation plate and the cover plate may be coated with one or more transparent electrodes. The movement of charged quantum dots within the liquid may be controlled by applying one or more bias voltages to the one or more transparent electrodes. Light emission from a particular region near the surface of the excitation plate may be controlled by moving charged quantum dots into or out of the particular region.

Abstract: In a display apparatus in which light from a light-emitting element is extracted by an optical element, a difference in reflection characteristics between a display area including the optical element corresponding to the light-emitting element and a non-display area including no optical element impairs the appearance of the display apparatus. Optical elements are uniformly disposed in a display area and a non-display area of a display apparatus.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a light shielding layer disposed on the second surface of the substrate and directly contacting with the conducting layer, wherein the light shielding layer has a light shielding rate of more than about 80% and has at least an opening exposing the conducting layer; and a conducting bump disposed in the opening of the light shielding layer to electrically contact with the conducting layer, wherein all together the light shielding layer and the conducting bump substantially and completely cover the second surface of the substrate.

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.

Abstract: A light-emitting device includes a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type, a first electrode connected to the lower layer of the first conductivity type, a second electrode connected to the upper layer of the second conductivity type, and an optical member seeded in the light emitting structure. The optical member can include a plurality of particles substantially transparent and having a lower refractive index than the light emitting structure. A plurality of discontinuities are formed at the boundary of the optical member in the light emitting structure.

Abstract: There is a problem in a dual emission device emitting light out of both surfaces that an image on the surface and an image on the rear surface are different from each other (either image is mirror-reversed). A dual emission device is disclosed in which either light emitted from the light-emitting device is reflected by glass including a semi-transmissive film to display on glass an image same as another image obtained also from the light-emitting device, and simultaneously, external information can be viewed through the glass. A mirror can be arranged between the dual emission device and the glass including a semitransparent film.

Abstract: The coating agent of the invention is a coating agent to be used between conductor members, comprising a thermosetting resin, a white pigment, a curing agent and a curing catalyst, the coating agent to be used between conductor members having a white pigment content of 10-85 vol % based on the total solid volume of the coating agent, and a whiteness of at least 75 when the cured product of the coating agent has been allowed to stand at 200° C. for 24 hours.

Abstract: A display apparatus that includes a first substrate, a second substrate, and a thin film transistor. The first substrate includes a fiber reinforced plastic substrate and a color filter layer formed on the fiber reinforced plastic substrate. The second substrate faces the first substrate. The thin film transistor is formed on the first substrate.

Abstract: An optical device, a method of making a laser gain medium, and a method of suppressing parasitics in a laser device include a core region comprising a plurality of a first type of ions that absorb energy at a first wavelength and transfer the absorbed energy to a plurality of a second type of ions that lase at a second wavelength after receiving the transferred energy. A cladding region coupled to the core region comprising another plurality of the second type of ions that suppress parasitics in the optical device by absorbing energy of at least a transverse portion of the second wavelength that enters the cladding region.

Abstract: An LED device with improved LED efficiency is presented. An LED die is positioned within a pocket formed by a substrate and an opening in a supporting layer arranged thereon. The increase in the LED efficiency is achieved by providing a device where at least a portion of the pocket surface is reflective. This portion of the pocket surface is reflective because it is covered by either a reflective layer of foil or film, or a reflective coating, or it is polished.

Abstract: Provided is a liquid crystal display including: a first substrate; a thin film transistor disposed on the first substrate; a passivation layer disposed on the thin film transistor and comprising a contact hole exposing an electrode of the thin film transistor; a pixel electrode disposed on the passivation layer and connected to the electrode of the thin film transistor through the contact hole; a lower buffer layer disposed on the pixel electrode; a lower alignment layer disposed on the lower buffer layer; a second substrate facing the first substrate; a common electrode disposed on the second substrate; an upper buffer layer disposed on the common electrode; and an upper alignment layer disposed on the upper buffer layer, in which the lower buffer layer comprises parylene, the upper buffer layer comprises parylene, or both the lower and the upper buffer layers comprise parylene.

Abstract: A semiconductor light emitting device, including a substrate, an epitaxy layer and an interference thin film is provided. The substrate has a first surface and a second surface opposite to the first surface. The epitaxy layer is disposed on the first surface. The interference thin film is disposed on the second surface. The interference thin film is formed by a plurality of first-material thin films and a plurality of second-material thin films alternately stacked with one another. The difference in refractive index between the first-material and second-material thin films is at least 0.7. The reflection spectrum of the interference thin film has at least one pass band, which allows an incident light of a specific wavelength to pass through. For example, the central wavelength of the incident light ranges 532±10 nm or 1064±10 nm, and the reflectance of the incident light is smaller than 40%.

Abstract: A method for the manufacture of a wavelength converted light emitting device is provided. A light curable coating material is arranged on the outer surface of a wavelength converted light emitting diode. The light curable coating material is cured, in positions where a high intensity of unconverted LED-light encounters the curable coating material. The method can be used to selectively stop unconverted light from exiting the device, leading to a wavelength converted LED essentially only emitting converted light.

Abstract: A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other.

Abstract: A hybrid laser for generating radiation includes an optical passive material and an optical active material. The laser includes a first optical waveguide and optical laser components with reflectors in the optical passive material. The first optical waveguide is adapted for coupling out radiation from the hybrid laser. The laser also includes a second optical waveguide defined in the optical active material. The optical laser components include reflectors defining a cavity and furthermore are adapted for providing laser cavity confinement in the first optical waveguide and the second optical waveguide. The second optical waveguide thereby is positioned at least partly over the first optical waveguide so that an evanescent coupling interface is defined between the second optical waveguide and the first optical waveguide and the evanescent coupling interface is positioned within the laser cavity.

Abstract: A light blocking member having variable transmittance, a display panel including the same, and a manufacturing method thereof. A light blocking member having a variable transmittance according to one exemplary embodiment includes a polymerizable compound, a binder, and a thermochromic material that exhibits a black color at a temperature below a threshold temperature and becomes transparent at a temperature above the threshold temperature.

Abstract: A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

Abstract: A method for integrating a slotted waveguide into a CMOS process is disclosed. A slot can be patterned on a SOI wafer by etching a first pad hard mask deposited over the wafer. The slot is then filled with a plug material by depositing a second pad hard mask over the first pad hard mask. A waveguide in association with one or more electronic and photonic devices can also be patterned on the SOI wafer. The trenches can be filled with an isolation material and then polished. Thereafter, the first and second pad hard masks can be stripped from the wafer. The slot can once again be filled with the plug material and patterned. After forming one or more electronic and photonic devices on the wafer using the standard CMOS process, a via can be opened up down to the nitride plug and the nitride plug can then be removed.

Abstract: An object of the present invention is to provide a mounting substrate, a manufacturing method, a light-emitting module and an illumination device that can sufficiently improve the luminous efficiency of an LED lamp. A mounting substrate according to the present invention includes a substrate and a reflective film that is formed on a front surface of the substrate and has a front surface on which LED chips are to be mounted, and the reflective film is made of metal oxide microparticles and a glass fit, and reflects light from the LED chips.

Abstract: A thin film transistor array panel includes a first insulation substrate, a plurality of data wires formed on the first insulation substrate and extending in a first direction, a data pad region formed on the first insulation substrate and having plural ones of the data wires extending therefrom, and an organic layer formed on the data wires, where the organic layer has a greater thickness where it is disposed over the data wires than the thickness it has between the data wires. The surface of the organic layer of the data pad region includes minute slit patterns that extend parallel to the first direction of the data wires, and the data wires have line boundaries of a zigzag shape.

Abstract: A method for depositing a phosphor layer on a light-emitting diode (“LED”) chip includes coating at least a light-emitting side of the LED chip with a phosphor-adhesive material, and applying phosphor particles to an exposed surface of the material such that the phosphor layer forms of phosphor particles that adhere to the exposed surface. A method for depositing phosphor layers on each of a plurality of LED chips includes mounting the LED chips to a common substrate, coating at least a light-emitting side of the LED chips with a phosphor-adhesive material, and applying phosphor particles to exposed surfaces of the material such that the phosphor layers form of phosphor particles that adhere to the material. A processed LED chip includes an unpackaged LED chip, a phosphor-adhesive material applied to a light-emitting side of the LED chip, and a phosphor layer formed of phosphor particles adhered to the material.

Abstract: A polarized light-emitting device is fabricated by a method that includes forming a radiation-emitting layer. The radiation-emitting layer includes a radiation-emitting material that emits radiation having a wavelength included in an emission wavelength band. The radiation-emitting material is disposed between a transparent anode and a transparent cathode. An optically active reflective layer is disposed on the polarized light-emitting device. The optically active reflective layer is configured to reflect radiation having a wavelength included in a reflection wavelength band of the optically active reflective layer. The reflection wavelength band of the optically active reflective layer is adjusted to at least partially encompass the emission wavelength band of the radiation-emitting layer.

Abstract: A pixel structure including an active device, a capacitor electrode line, a light shielding layer, a color filter pattern and a pixel electrode is provided. The active device and the capacitor electrode line are disposed on a substrate. The light shielding layer is disposed on the substrate, and the dielectric constant of the light shielding layer is less than 6. The light shielding layer defines a unit area on the substrate, and a contact hole is formed in the light shielding layer above the active device. A color filter pattern is disposed in the unit area, wherein the dielectric constant of the color filter pattern is less than 6, and the color filter pattern does not fill into the contact hole. The pixel electrode is disposed on the color filter pattern, in which the pixel electrode fills into the contact hole so as to electrically connect with the active device.

Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a flat top surface and a plurality of concave regions from the flat top surface, a reflector within the concave regions of the first semiconductor layer, and a second semiconductor layer on the first semiconductor layer.

Abstract: An LED package includes a substrate, an electrode structure, an LED die, a packaging portion, and a covering portion. The electrode structure is formed on the substrate. The LED die is mounted on the substrate, and electrically connected to the electrode structure. The packaging portion covers the LED die. The covering portion surrounds a periphery of the LED package and seals a joint between the substrate, the electrode structure and the packaging portion. The covering portion is made of silicone-titanate resin with reactive monomers, wherein the reactive monomers comprises more than 60% of heptane, 7.0% to 13.0% of allytrimethoxysilane, 5.0% to 10.0% of tetrabutyl titanate, and less than 0.1% of tetramethoxysilane.

Abstract: Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.

Abstract: A light-emitting device has a light source disposed on a support. A matrix material including a dispersion of beads is disposed over the light source. The refractive index of the beads is different from the refractive index of the matrix material. The light source may include an LED. The matrix material may include a lens.

Abstract: An LED apparatus and method of operating the apparatus is provided for illumination toward a preferential side in a downward and forward direction. The LED apparatus includes a printed circuit board; a plurality of LED devices arranged in one or more horizontal rows and mounted to the printed circuit board; a secondary lens associated with each of the LED devices and being disposed on the printed circuit board; and a diffuse horizontal reflector disposed between the printed circuit board and the secondary lenses. The horizontal reflector may be made a diffuse reflector by providing a roughened bottom surface of the secondary lenses including flanges, thereby enabling the use of a specularly reflective material on the printed circuit board surface while still obtaining diffuse reflection.

Abstract: An organic light-emitting device including a substrate, an anode layer on the substrate, the anode layer including WOxNy (2.2?x?2.6 and 0.22?y?0.26), an emission structure layer on the anode layer, and a cathode layer on the emission structure layer.

Abstract: A semiconductor light emitting structure including a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer is provided. The patterned structure is protruded from or indented into a surface of the substrate, so that the surface of the substrate becomes a roughed surface. The patterned structure has an asymmetrical geometric shape. The first semiconductor layer is disposed on the roughed surface. The active layer is disposed on the first semiconductor layer. The second semiconductor is disposed on the active layer.

Abstract: A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has twenty of more periods of mirror pairs.

Abstract: The present application discloses a light-emitting semiconductor device including a transparent layer having an upper surface, a lower surface, and a sidewall; a wavelength conversion structure arranged on the upper surface; an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and a reflective wall arranged to cover the sidewall.

Abstract: A batwing beam is produced from an optical emitter having a primary LED lens over a number of LED dies on a package substrate. The LED lens includes a batwing surface formed by rotating a parabolic arc about an end of the parabolic arc over a center of the optical emitter. A center of each of the LED dies is mounted to the package substrate about the focus of a parabola whose arc forms the batwing surface, for example, between about 0.5 to 1.5 of a focal distance from the vertex of the parabola. The batwing surface reflects light from the number of LED dies through total internal reflection (TIR) or through a reflectivity gel coating.

Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

Abstract: An alignment layer is formed by forming an alignment solution on a base substrate, baking the alignment solution to form an alignment layer, and irradiating light having a wavelength of about 280 nanometers to about 340 nanometers to the alignment layer, thereby aligning the alignment layer. A liquid crystal display is manufactured using the method of forming the alignment layer.

Abstract: A collimating light emitting device comprises a patterned optical layer able to redirect divergent light to light beam with uniform direction without utilizing external lenses thereby decreasing the size. The collimating light emitting device of the present invention may be utilized as a micro array projection device. The patterned optical layer may also be utilized in a single-die light-emitting device, thereby enhancing collimation. The manufacturing methods of the collimating light emitting device are also presented.

Abstract: An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

Abstract: A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.

Abstract: A method of wafer level purifying light color of a LED semiconsuctor is disclosed. After a LED wafer is fabricated, multi-transparent films formed of first layer and a second layer alternatively until reaching a predetermined number deposited by e-gun deposition with an aid of ion plasma beam. The first layer is formed of an oxide layer and the second layer is formed of a metal oxide layer. The two materials, one has a high index of refraction and the other has a low index of refraction. The total multi-transparent films are about 80 to 120 layer which can narrow wave width about a central wavelength.

Abstract: An LED module includes first through third LED chips and two Zener diodes for preventing excessive voltage application to the first and the second LED chips. A first lead includes a mount portion on which the first through third LED chips and the two Zener diodes are mounted. A resin package covers part of the first lead and includes an opening for exposing the three LED chips and two Zener diodes. A single insulating layer bonds the first and second LED chips to the first lead. A single conductive layer bonds the third LED chip and two Zener diodes to the first lead. The Zener diodes are arranged between the first, second LED chips and the third LED chip.