Abstract: An LED array includes a substrate and a plurality of LEDs formed on the substrate. The LEDs are electrically connected with each other. Each of the LEDs includes a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on the substrate in sequence. The connecting layer is etchable by alkaline solution. A bottom surface of the n-type GaN layer which connects the connecting layer has a roughened exposed portion. The bottom surface of the n-type GaN layer has an N-face polarity. A method for manufacturing the LED array is also provided.

Abstract: Disclosed is a lighting device capable of alleviating unevenness in luminosity upon a member that is being illuminated. A backlit device (lighting device) (10) comprises LEDs (11); a plurality of substrates (12) whereupon the LEDs are mounted; photodiodes (18) that are mounted upon the substrates; and a reflector sheet (13) that is positioned upon the substrates. The LEDs function as light sources for illumination, and transmit visible light signals to the photodiodes that are mounted adjacently thereto upon the substrates. The photodiodes receive the visible light signals from the LEDs that are mounted adjacently thereto upon the substrates.

Abstract: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

Abstract: A semiconductor light emitting structure including a substrate, a second type electrode layer, a reflecting layer, an insulating layer, a first type electrode layer, a first type semiconductor layer, an active layer and a second type semiconductor layer is provided. The second type electrode layer formed on the substrate has a current spreading grating formed by several conductive pillars and conductive walls, which are staggered and connected to each other. The reflecting layer and the insulating layer are formed on the second type electrode layer in sequence, and cover each conductive pillar and each conductive wall. The first type electrode layer, the first type semiconductor layer and the active layer are formed on the insulating layer in sequence. The second type semiconductor layer is formed on the active layer, and covers each conductive pillar and each conductive wall.

Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active; an electrode on a first region of the first conductive semiconductor layer; a conductive support member under the light emitting structure; a metal layer between the light emitting structure and the conductive support member; and a reflective layer between the metal layer and the light emitting structure, wherein the metal layer is physically contacted with a lower surface of the reflective layer, wherein the reflective layer includes a first layer and a second layer, wherein the first layer has a different material from the second layer, wherein the metal layer has a protrusion, wherein the first conductive semiconductor layer includes a roughness.

Abstract: A laser diode assembly comprising a semiconductor substrate; (2; 101; 201; 301; 72), at least two laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99), each having one active zone; (6, 12; 105, 109, 113; 207, 213; 307, 311; 76, 82, 88), and at least one translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85), wherein the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) and the translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85) are monolithically deposited on the semiconductor substrate (2; 101; 201; 301; 72), wherein the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) are electrically connected by the translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85), and wherein laser diodes (26a, 26b, 27a, 27b; 36a, 36b, 37a, 37b; 46a, 46b, 47a, 47b; 66a, 66b, 67a, 67b; 94a, 94b, 95a, 95b, 96a, 96b) that are formed from the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) form a two-dimensional structu

Abstract: The present invention relates to a surface light source, including a light source section made up of plural light emitting diodes and lenses that expand light from these light emitting diodes. The lens in the light source section has a light incident surface on which light from the light emitting diode is incident with an optical axis at a center, and a light exit surface that expands and emits the incident light. The light incident surface has a continued depressed surface, while the light exit surface has a continued projected surface.

Abstract: Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride based compound is laminated on a substrate 11, and on this AlN seed layer, there are sequentially laminated each layer of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer respectively composed of a group-III nitride semiconductor, wherein the full width at half-maximum of the X-ray rocking curve of the (0002) plane of the p-type semiconductor layer 16 is 60 arcsec or less, and the full width at half-maximum of the X-ray rocking curve of the (10-10) plane is 250 arcsec or less.

Abstract: A light emitting diode (LED) for achieving an asymmetric light output includes a multilayered structure comprising a p-n junction, where at least one layer of the multilayered structure comprises a surface configured to provide a peak emission in a direction away from a normal to a mounting surface, the surface being a top or bottom surface of the layer.

Abstract: A substrate including phosphor is remotely illuminated by an LED. Optical radiation that emerges through the substrate is measured. Portions of the substrate, such as raised features on the substrate, are then selectively removed responsive to the measuring, so as to obtain a desired optical radiation. In removing portions of the substrate, holes may be drilled through the substrate to provide a separate path for light from the LED that does not pass through the phosphor. Alternatively, a separate LED may be provided outside the dome.

Abstract: As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.

Abstract: A semiconductor package which includes a generally planar die paddle defining multiple peripheral edge segments and a plurality of leads which are segregated into at least two concentric rows. Connected to the top surface of the die paddle is at least one semiconductor die which is electrically connected to at least some of the leads of each row. At least portions of the die paddle, the leads, and the semiconductor die are encapsulated by a package body, the bottom surfaces of the die paddle and the leads of at least one row thereof being exposed in a common exterior surface of the package body.

Abstract: A housing for an optoelectronic component including a main housing body formed by a first plastics material, and which has a recess, and a coating formed by a second plastics material, and which, at least in a region of the recess, connects at least in places to the main housing body and is in direct contact with the main housing body, wherein the first plastics material is different from the second plastics material, and the first plastics material and the second plastics material differ from one another with regard to at least one of the following material properties: temperature resistance with regard to discoloration, temperature resistance with regard to deformation, temperature resistance with regard to destruction, and resistance to electromagnetic radiation.

Abstract: A metal substrate with an insulation layer includes a metal substrate having at least an aluminum base and an insulation layer formed on said aluminum base of said metal substrate. The insulation layer is a porous type anodized film of aluminum. The anodized film includes a barrier layer portion and a porous layer portion, and at least the porous layer portion has compressive strain at room temperature. a magnitude of the strain ranges from 0.005% to 0.25%. The anodized film has a thickness of 3 micrometers to 20 micrometers.

Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; an electrode layer on the light emitting structure; and a conductive support member on the electrode; wherein the conductive support member includes a center portion and a circumference portion surrounding the center portion, wherein a thickness of the circumference portion is lower than a thickness of the center portion, and wherein an area of a top surface of the electrode layer is larger than an area of a top surface of the second conductive semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.

Abstract: A light-emitting diode chip comprises a semiconductor body (1) having a first (1A) and a second region (1B); an active zone (2) within the semiconductor body (1), which active zone, during the operation of the light-emitting diode chip (100), emits electromagnetic radiation through a radiation coupling-out area (11) formed at least in places by a first main area (111) of the semiconductor body (1); at least one trench (3) in the semiconductor body (1) wherein parts of the semiconductor body (1) are removed in the region of the trench, wherein the at least one trench (3) extends at least as far as the active zone (2), the at least one trench (3) completely surrounds the first region (1A) in a lateral direction, and the second region (1B) completely surrounds the at least one trench (3) and the first region (1A) in a lateral direction.

Abstract: A III-nitride light emitting device having a substrate with a conductive grid made of conductive lines formed thereon. An active-region is sandwiched between an n-type layer and a p-type layer forming an LED structure, and the conductive grid is in ohmic contact with the n-type layer. Also provided is a method for fabricating the same.

Abstract: An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided.

Abstract: Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.

Abstract: Embodiments relate to an organic light-emitting display device, comprising a first substrate defined by a plurality of pixels each including a pixel area and a transmittance area adjacent to the pixel area, the pixel area emitting light in a first direction and the transmittance area transmitting external light, and the first substrate including a pair of optical pattern units for transmitting or blocking the external light for each transmittance area according to coded patterns corresponding to the plurality of pixels, a second substrate facing the first substrate and encapsulating the plurality of pixels on the first substrate, and a pair of sensor units corresponding to the pair of optical pattern units, the pair of sensor units being arranged in a second direction that is opposite to the first direction in which the light is emitted, the pair of sensor units receiving the external light passing through the pair of optical pattern units.

Abstract: A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.

Abstract: A method for manufacturing a light emitting diode chip is provided, comprising: providing a substrate, an upper surface of which comprising a plurality of micro-bulges formed thereon; forming a first type semiconductor layer, a light emitting layer and a second type semiconductor layer on the upper surface of the substrate successively; partially etching the second type semiconductor layer and the light emitting layer to form an electrode bonding area on the first type semiconductor layer; and forming a first electrode structure on the electrode bonding area and forming a second electrode structure on the second type semiconductor layer. A LED chip and a LED comprising the same are also provided.

Abstract: A reflecting resin sheet provides a reflecting resin layer at the side of a light emitting diode element. The reflecting resin sheet includes a release substrate and the reflecting resin layer provided on one surface in a thickness direction of the release substrate. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be capable of being in close contact with the light emitting diode element.

Abstract: A backlight module comprises a back plate, a first light source module, and an optical component. The optical component includes a side surface and a bottom surface perpendicularly connected to the side surface. The first light source module comprises a plurality of first LEDs disposed on the back plate and at the side surface of the optical component for emitting light at a first wavelength toward the side surface of the optical component. The light is directed in a specific direction by the optical component and then sent out from an emitting surface. The backlight module further comprises a second light source module. The second light source module comprises a plurality of second LEDs disposed near the bottom surface of the optical component for emitting light at a second wavelength toward the bottom surface of the optical component. Light produced after the light at the first wavelength mixes with the light at the second wavelength becomes white light after passing through the optical component.

Abstract: Aspects of the invention include an electronic device comprising a first contact point; a metal pad disposed to provide electrical connection to the first contact point; a substrate comprising a first face and a second face opposing the first face of the substrate, the first face of the substrate adjacent a face of the electronic device; and a VIA passing through the substrate from the second face of the substrate to the metal pad, the VIA exhibiting: a pass through extending through the substrate from the first face to the second face; a metal layer disposed within the pass through arranged to provide electrical connectivity to the metal pad from an area adjacent the second face of the substrate; and an electrically insulating first passivation layer disposed between the metal layer and the substrate arranged to provide electrical insulation between the substrate and the metal layer.

Abstract: The present invention provides a light emitting device, including a base, an LED inversely mounted on the base. The LED includes a buffer layer, an LED chip on the buffer layer. The buffer layer includes a plurality of protrusions with complementary pyramid structure on a light-exiting surface of the LED. The present invention also provides a method for manufacturing a light emitting device, including: providing a substrate and forming a plurality of pyramid structures on the substrate; forming successively a buffer layer, an n-type semiconductor layer, an active layer, a p-type semiconductor layer and a contact layer on the substrate with the pyramid structures; forming an opening with a depth at least from the contact layer to a top of the n-type semiconductor layer, and forming a first electrode on the contact layer and a second electrode on a bottom of the opening; and removing the substrate. The light emitting device has a high luminous efficiency and the manufacturing method is easy to implement.

Abstract: A light emitting device includes first and second cladding layers and an active layer therebetween including first and second side surfaces and first and second gain regions, a second side reflectance is higher than a first side reflectance, a first end surface part of the first gain region overlaps a second end surface part of the second gain region in an overlapping plane, the first gain region obliquely extends from the first end surface to a third end surface, the second gain region obliquely extends from the second end surface to a fourth end surface, a first center line connecting the centers of the first and third end surfaces and a second center line connecting the centers of the second and fourth end surfaces intersect, and the overlapping plane is shifted from the intersection point toward the first side surface.

Abstract: A light-emitting device and a lighting device each of which includes a plurality of light-emitting elements exhibiting light with different wavelengths are provided. The light-emitting device and the lighting device each have an element structure in which each of the light-emitting elements emits only light with a desired wavelength, and thus the light-emitting elements have favorable color purity. In the light-emitting element emitting light (?R) with the longest wavelength of the light with different wavelengths, the optical path length from a reflective electrode to a light-emitting layer (a light-emitting region) included in an EL layer is set to ?R/4 and the optical path length from the reflective electrode to a semi-transmissive and semi-reflective electrode is set to ?R/2.

Abstract: The present invention discloses an LED structure and a manufacturing method thereof. The LED structure has a housing, an LED chip and a transparent encapsulant. The housing has a recess and at least one protruded wall. The LED chip is received in the recess. The transparent encapsulant is formed by dispensing a molding compound into the recess by an adhesive dispenser. The transparent encapsulant has an edge matched with an edge of the recess to encapsulate the LED chip in the recess, and has a height smaller than that of the protruded wall. The LED chip of the LED structure of the present invention can emit light through the spherical surface of the transparent encapsulant based on a greater visual angle, and thus enhance the light extraction efficiency.

Abstract: An LED module with a cooling passage is disclosed. The LED module includes a light source unit having a plurality of LED's which provide light through an appropriate power supply, and one or more cooling units which form said cooling passage, which combine heat generated from the LEDs with ambient heat and discharges the combined heat in an opposite direction.

Abstract: A light emitting diode (LED) lamp includes a base with one or more LED chips, an internal cover over the LED chips, where the cover is a translucent ceramic whose thermal conductivity is greater than glass, where the cover has an interior surface separated from the LED chips by a gap, and where an exterior surface of the cover is coated with a phosphor. The ceramic cover preferably has a bulk thermal conductivity of at least 5 W/(m·K), such as polycrystalline alumina. The LED chips preferably are blue LEDs and the phosphor is selected so that the lamp emits white light. In the method of making the lamp, the phosphor may be applied to the exterior surface of the cover as a preformed sheet or in a coating.

Abstract: The present invention discloses an LED packaging structure, which comprises a metal housing having a cavity and two open ends, a sintered two-phase-flow heat transfer device having a flat top mounting plane, a lens disposed in the first open end, at least one LED chip mounted in the cavity of the metal housing and on the mounting plane of the two-phase-flow heat transfer device; the LED chip is connected with an electrical connection device, and wherein the sintered two-phase-flow, electrical connection device and LED chip are fixed together through a fixing base; as using a sintered two-phase-flow heat transfer device for heat dissipation, the heat generated by the LED could be expelled in time for dealing with long-term continual work, and thus the LED chip could have a longer service life; in addition, the lens used in the present invention could improve the luminescent efficiency.

Abstract: A method including: providing a transistor structure that includes a base region of first semiconductor type between semiconductor emitter and collector regions of second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with emitter, base, and collector regions; applying electrical signals, including a high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including a high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency

Abstract: This disclosure provides systems, methods and apparatuses for pixel vias. In one aspect, a method of forming an electromechanical device having a plurality of pixels includes depositing an electrically conductive black mask on a substrate at each of four corners of each pixel, depositing a dielectric layer over the black mask, depositing an optical stack including a stationary electrode over the dielectric layer, depositing a mechanical layer over the optical stack, and anchoring the mechanical layer over the optical stack at each corner of each pixel. The method further includes providing a conductive via in a first pixel of the plurality of pixels, the via in the dielectric layer electrically connecting the stationary electrode to the black mask, the via disposed at a corner of the first pixel, offset from where the mechanical layer is anchored over the optical stack in an optically non-active area of the first pixel.

Abstract: Provided are a mask for an application of paste and a method of manufacturing a semiconductor light emitting device by using the same. The method includes preparing a light emitting structure including first and second conductive semiconductor layers and an active layer disposed therebetween, which has at least one electrode formed on a surface of the light emitting structure; disposing a mask having an open part exposing a portion of the surface of the light emitting structure therethrough and a recess part corresponding the electrode in a region thereof on a surface of the light emitting structure; and applying wavelength conversion material-containing paste to the surface of the light emitting structure through the open part.

Abstract: An optoelectronic device assembly can comprise: a coated element and an optoelectronic device on the coated element. The coated element can comprise a thermoplastic substrate and a protective weathering layer. The thermoplastic substrate can comprise a bisphenol-A polycarbonate homopolymer and a polycarbonate copolymer, and wherein the polycarbonate copolymer is selected from a copolymer of tetrabromobisphenol A carbonate and BPA carbonate; a copolymer of 2-phenyl-3,3-bis(4-hydroxyphenyl)phthalimidine carbonate and BPA carbonate; a copolymer of 4,4?-(1-phenylethylidene)biphenol carbonate and BPA carbonate; a copolymer of 4,4?-(1-methylethylidene)bis[2,6-dimethyl-phenol]carbonate and BPA carbonate; and combinations comprising at least one of the foregoing. The protective weathering layer can comprise resorcinol polyarylate and polycarbonate.

Abstract: A vertical solid state lighting (SSL) device is disclosed. In one embodiment, the SSL device includes a light emitting structure formed on a growth substrate. Individual SSL devices can include a embedded contact formed on the light emitting structure and a metal substrate plated at a side at least proximate to the embedded contact. The plated substrate has a sufficient thickness to support the light emitting structure without bowing.

Abstract: An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

Abstract: A compact solid state laser that generates multiple wavelengths and multiple beams that are parallel, i.e., bore-sighted relative to each other, is disclosed. Each of the multiple laser beams can be at a different wavelength, pulse energy, pulse length, repetition rate and average power. Each of the laser beams can be turned on or off independently. The laser is comprised of an optically segmented gain section, common laser resonator with common surface segmented cavity mirrors, optically segmented pump laser, and different intra-cavity elements in each laser segment.

Abstract: An LED bar module includes a lengthwise base and a number of LED chips. The lengthwise base includes a metal layer, a metal circuit layer, and an insulated layer between the metal layer and the metal circuit layer. The insulated layer has a groove in a central thereof to expose a part of the metal layer. The LED chips are placed in the groove and directly contact the exposed part of the metal layer. The metal circuit layer has two connecting portions electrically connecting with the LED chips. The LED chips are arranged in a line which is located between and juxtaposed with the two connecting portions of the metal circuit layer.

Abstract: An LED package comprises a substrate, a reflector, a light-absorbable layer, an encapsulation layer and an LED chip. The reflector comprises a first incline with an inclined angle surrounding the LED chip. The light-absorbable layer comprises a second incline with another inclined angle direct to the LED chip, wherein the inclined angle of the second incline is greater than that of the first incline and the inclined angle of the first incline is between 90 to 150 degrees.

Abstract: An embodiment of the disclosure includes a method of fabricating a plurality of light emitting diode devices. A plurality of LED dies is provided. The LED dies are bonded to a carrier substrate. A patterned mask layer comprising a plurality of openings is formed on the carrier substrate. Each one of the plurality of LED dies is exposed through one of the plurality of the openings respectively. Each of the plurality of openings is filled with a phosphor. The phosphor is cured. The phosphor and the patterned mask layer are polished to thin the phosphor covering each of the plurality of LED dies. The patterned mask layer is removed after polishing the phosphor.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a metallic protective film layer with a thickness of at least 10 microns may be formed on the lateral and/or bottom sides of the vertical GaN LED. Further, a metallic substrate may be used instead of a sapphire substrate. A metallic support layer may be formed to protect the element from being distorted or damaged. Furthermore, a P-type electrode may be partially formed on a P—GaN layer in a mesh form.

Abstract: A light emitting die package is provided which includes a metal substrate having a first surface and a first conductive lead on the first surface. The first conductive lead is insulated from the substrate by an insulating film. The first conductive lead forms a mounting pad for mounting a light emitting device. The package includes a metal lead electrically connected to the first conductive lead and extending away from the first surface.

Abstract: A light emitting device includes a first layer that generates light by injection current and forms a waveguide for the light, and an electrode that injects the current into the first layer, wherein the waveguide of the light has a first region, a second region, a third region, and a fourth region, the first region and the second region are connected at a first reflection part, the first region and the third region are connected at a second reflection part, the second region and the third region are tilted at the same angle and connected to an output surface, a distance between the fourth region and at least one of the first region, the second region, and the third region is a distance that produces evanescent coupling, and the fourth region forms a resonator.

Abstract: Methods of packaging a semiconductor light emitting device include providing a substrate having the semiconductor light emitting device on a front face thereof. A first optical element is formed from a first material on the front face proximate the semiconductor light emitting device but not covering the semiconductor light emitting device and a second optical element is formed from a second material, different from the first material, over the semiconductor light emitting device and the first optical element. Packaged semiconductor light emitting devices are also provided.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.

Abstract: The present arrangement provides a method of treating an oxidized layer of metal nitride, including oxidizing a layer (2) of metal oxide at the surface of a first layer (1) of nitride of said metal using a plasma of an oxidizing species with an oxidation number that is greater than that of oxygen in order to form a metallic layer (3) of a compound based on said metal; and reducing the metallic layer (3) formed in step i) using a plasma of hydrogen and nitrogen to form a second layer (4) of nitride of said metal.

Abstract: This substrate (11) for a device (50) that collects or emits radiation comprises a transparent polymer layer (1) and a barrier layer (2) on at least one face (1A) of the polymer layer. The barrier layer (2) consists of an antireflection multilayer of at least two thin transparent layers (21, 22, 23, 24) having both alternately lower and higher refractive indices and alternately lower and higher densities, wherein each thin layer (21, 22, 23, 24) of the constituent multilayer of the barrier layer (2) is an oxide, nitride or oxynitride layer.