Abstract: A process is provided for producing a doped organic semiconductive layer, comprising the process steps of A) providing a matrix material, B) providing a dopant complex, and C) simultaneously applying the matrix material and the dopant complex to a substrate by vapor deposition, wherein, in process step C), the dopant complex is decomposed and the pure dopant is intercalated into the matrix material.

Abstract: The invention relates to a light-emitting organic component, in particular a light-emitting organic diode, having an electrode spreading over an electrode surface area and a counter electrode spreading over a counter electrode surface area as well as an organic layer array formed between the electrode and the counter electrode and in electrical contact therewith, an electrical resistance gradient in a direction substantially parallel to the electrode surface area being formed within a region of the organic layer array at least partially overlapping with the electrode surface area. Furthermore, the invention relates to a method for the production of a light-emitting organic component.

Abstract: A method of manufacturing an electronic device comprises: providing a base comprising circuit elements; forming a double bank well-defining structure over the base, comprising a first layer of insulating material and a second layer of insulating material thereover; and depositing a solution of organic material in the well defined by the double bank structure. The double bank well-defining structure is formed by removing material from the first and second layers in a single processing step to form the well. The first layer is made of a material which is removed at a faster rate than material of the second layer to form an overhanging step structure in which the second layer protrudes out over an edge of the first layer.

Abstract: A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern is also disclosed, the gel electrolyte pattern comprising either a mixture of a gelling agent and an electrolyte precursor or the products of a chemical reaction between a gelling agent and an electrolyte precursor.

Abstract: An organic thin film transistor (OTFT) array panel for a display device includes a gate line and a pixel electrode formed on a substrate, the gate line and pixel electrode each having a first conductive layer including a transparent conductive oxide and a second conductive layer including a metal, a data line crossing the gate line and including a source electrode, a drain electrode facing the source electrode and connected with the pixel electrode, and an organic semiconductor in contact with the source electrode and the drain electrode.

Abstract: There are provided a laminate, a preparatory support, a laminate production method and a device production method which make it possible to successfully produce a thin device on a flexible substrate which is likely to bend or break. A laminate 1A includes: a support 2A; a photothermal conversion layer 3A; a light blocking layer 4A; an adhesive layer 5A; a flexible substrate 6A; and a device element 7A, wherein the support 2A can be detached from the other layers by irradiating the photothermal conversion layer 3A with light, and wherein the adhesive layer 5A is formed such that it covers the side surface of the light blocking layer 4A.

Abstract: The present invention provides an organic EL display panel manufacturing method which is capable of forming a desired organic film or the like with high accuracy without imparting damages to a substrate and an organic film and an organic EL display panel which is manufactured by the method. An opening portion which corresponds to a panel pattern region of a display panel is formed in a vapor deposition mask. The opening portion has a bottom surface in the inside of a recessed surface which is retracted from a surface on which the vapor deposition mask is brought into contact with the substrate. The opening portion of the vapor deposition mask is spaced apart from the substrate with a predetermined gap space and evaporated particles from an evaporating source are vapor-deposited to the substrate through the opening portion.

Abstract: A field-effect transistor is provided. The field-effect transistor includes a gate electrode, a gate-insulating layer, source/drain electrodes, and an organic semiconductor layer constituting a channel region. The source/drain electrodes each include a conductive portion composed of a metal and an organic conductive material layer which at least partially covers the conductive portion and which is doped with a dopant. The channel region is composed of the organic semiconductor layer located between the source/drain electrodes. The channel region and each of the conductive portions is electrically connected through the organic conductive material layer.

Abstract: Diode comprising a substrate and an organic electroluminescent layer interposed between a lower electrode and an upper electrode, at least one of which electrodes is formed from a multilayer which is itself formed by the stack of adjacent sublayers made of amorphous carbon, having different refractive indices n1, n2. The amorphous carbon contains no added silicon, thereby making it possible to avoid using silane for the manufacture. The multilayer provides an electrode function, a multimirror function and an encapsulation function.

Abstract: Disclosed is a laminated structure, including a substrate, a wettability changing layer on the substrate, the wettability changing layer including a material, a critical surface tension of the material being changed by providing energy thereto, and an electrically conductor layer on the substrate, the electrically conductor layer formed on a region of the wettability changing layer, the region being provided with the energy, wherein the material includes a structural unit including a side chain and a structural unit including no side chain.

Abstract: The invention relates to an improved electronic device, like an organic field emission transistor (OFET), which has a short source to drain channel length and contains an organic semiconducting formulation comprising a semiconducting binder.

Abstract: A discrete trap memory, comprising a silicon substrate layer, a bottom oxide layer on the silicon substrate layer, a Fullerene layer on the bottom oxide layer, a top oxide layer on the Fullerene layer, and a gate layer on the top oxide layer; wherein the Fullerene layer comprises spherical, elliptical or endohedral Fullerenes that act as charge traps.

Abstract: There is provided a process for forming an organic electronic device wherein a TFT substrate having a non-planar surface has deposited over that substrate a planarization layer such that a substantially planar substrate, or planarized substrate, is formed. A multiplicity of thin first electrode structures having a first thickness and having tapered edges with a taper angle of no greater than 75° are formed over the planarized substrate. A multiplicity of active layers is formed over the planarized substrate. Then a buffer layer is formed by liquid deposition of a composition comprising a buffer material in a first liquid medium. The buffer layer has a second thickness which is at least 20% greater than the first thickness. A chemical containment pattern defining pixel openings is then formed over the buffer layer. A composition comprising a first active material in a second liquid medium is deposited into at least a portion of the pixel openings. Then a second electrode is formed.

Abstract: It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

Abstract: A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

Abstract: A wiring pattern is disclosed including: a variable wettability layer including a material whose critical surface tension changes in response to energy provided thereto, the wettability changing layer including a high surface energy part exhibiting a high critical surface tension and a low surface energy part exhibiting low critical surface tension; and a conductive pattern layer formed on the variable wettability layer at the high surface energy part. The conductive pattern layer has an elongated shape with a chamfered corner part in a plan view.

Abstract: An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Abstract: There is provided a process for forming a contained second layer over a first layer. The process comprises forming the first layer having a first surface energy and then treating the first layer with a photocurable surface-active composition which is a fluorinated ester or fluorinated imide of an ?,?-unsaturated polyacid; exposing the photocurable surface-active composition patternwise with radiation resulting in exposed areas and unexposed areas; developing the photocurable surface-active composition to remove the unexposed areas resulting in a first layer having untreated portions in the unexposed areas and treated portions in the exposed areas, where the treated portions have a second surface energy that is lower than the first surface energy; and forming the second layer on the untreated portions of the first layer. There is also provided an organic electronic device made by the process.

Abstract: The invention relates to novel formulations comprising an organic semiconductor (OSC) and a conductive additive, to their use as conducting inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells, to methods for preparing OE devices using the novel formulations, and to OE devices and OPV cells prepared from such methods and formulations.

Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Abstract: A sensor and/or actuator system in which functional circuitry is embedded in an all organic electromechanical transducer device is disclosed. The electromechanical transducer device exploits the behavior of a flexible sensible ionomeric material sheet as effective sensing or actuating member sandwiched between flexible organic electrodes when undergoing a deformation or being polarized at a certain drive voltage applied to the, electrodes, respectively. The completely embedded all organic system is realized with a process exploiting relatively low cost deposition and patterning techniques. The enhanced flexibility makes the all organic device suitable for new applications in fields ranging from biomedical to aerospace industry.

Abstract: An active organic electronic component is protected within an organic electronic device by an elastomeric laminating adhesive, which adheres the substrate and cover of the electronic device and encloses and protects the active organic component within the device. The organic electronic device has a structure comprising (a) a substrate; (b) an active organic component disposed on the substrate, and optionally, a barrier coating disposed over the active organic component and over part of the substrate; (c) a cover, and optionally a getter associated with the cover; (d) a cured elastomeric laminating adhesive applied in the area between the substrate and the cover and closing the active organic component. The laminating adhesive may be theremally curable or curable by actinic radiation.

Abstract: A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

Abstract: An organic optoelectronic component is provided, which includes a first electrode, an active layer formed on the first electrode, a second intermediate layer formed on the active layer, and a second electrode formed on the second intermediate layer, wherein the second intermediate layer is formed with a second mixture containing a second polymer and at least a second organic molecule. The second organic molecule is one for forming hole transferring material, electron transferring material, electron blocking material or hole blocking material. The organic optoelectronic component of the present invention is prepared by a solution process, thereby simplifying the process, improving film-formation property, and enhancing component efficiency.

Abstract: A memory device has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound, to cause a phase change of the organic compound from a first phase to a second phase.

Abstract: A method of producing an electronic or electro-optic device, and the devices produced, includes producing a first electrode by a solution process, producing a second electrode by a solution process, and lamination an active polymer layer between the first and second electrodes.

Abstract: Compositions for use in hole transporting layers (HTLs) or hole injection layers (HILs) are provided, as well as methods of making the compositions and devices fabricated from the compositions. OLED devices can be made. The compositions comprise at least one conductive conjugated polymer, at least one semiconducting matrix component that is different from the conductive conjugated polymer, and an optional dopant, and are substantially free of an insulating matrix component.

Abstract: Use of certain materials in hole injection layer and/or hole transport layer can improve operational lifetimes in organic devices. Polymers having fused aromatic side groups such as polyvinylnaphthol polymers can be used in conjunction with conjugated polymers. Inks can be formulated and cast as films in organic electronic devices including OLEDs, SMOLEDs, and PLEDs. One embodiment provides a composition comprising: at least one conjugated polymer, and at least one second polymer different from the conjugated polymer comprising at least one optionally substituted fused aromatic hydrocarbon side group. The substituent can be hydroxyl. Aqueous-based inks can be formulated.

Abstract: Substrates carrying many molecular devices and circuits made of at least two devices are described. The substrates have less than 50% shorted molecular devices; and molecular circuits comprise a first molecular device and a second molecular device. The first molecular device has at least one self assembled monolayer (SAM) of a first type sandwiched between a first bottom electrode and a first top electrode. Similarly, the second molecular device has at least one SAM of a second type sandwiched between a second bottom electrode and a second top electrode. The first top electrode is electrically connected to the second bottom electrode. In exemplary embodiment, the first and second types of SAM are mutually different.

Abstract: An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.

Abstract: A method for forming an organic or partly organic switching device, comprising: depositing layers of conducting, semiconducting and/or insulating layers by solution processing and direct printing; defining microgrooves in the multilayer structure by solid state embossing; and forming a switching device inside the microgroove.

Abstract: It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.

Abstract: A method of forming an organic ferroelectric film configured to include an organic ferroelectric material with a crystalline property as a principal material includes (a) forming a low crystallinity film having a crystallinity lower than a crystallinity of the organic ferroelectric film on one surface of a substrate, and (b) forming the organic ferroelectric film from the low crystallinity film. The step (a) includes applying a liquid material containing the organic ferroelectric material on the one surface of the substrate and then drying the liquid material, and the step (b) includes heating and pressurizing the low crystallinity film to enhancing the crystallinity in the low crystallinity film while fairing the low crystallinity film.

Abstract: An organic optoelectronic device includes a substrate, an anode, a cathode, an active region comprising an organic material, an encapsulation that isolates the active region from an ambient environment, wherein the encapsulation comprises a housing, and a first hermetically sealed electrical path through the housing.

Abstract: The present memory device includes first and second electrodes, an active layer and a passive layer, the active and passive layers being between the first and second electrodes, with either or both of the active layer and passive layer being made up a plurality of self-assembled sublayers.

Abstract: An organic light-emitting substrate includes; a base substrate including a display area and a peripheral area formed around the display area, an organic light-emitting diode including a pixel electrode, a common electrode and an organic light-emitting part, the pixel electrode being formed in a unit pixel of the display area, the common electrode being formed over the display area, and the organic light-emitting part being disposed between the pixel electrode and the common electrode, a driving circuit part which applies driving current to the pixel electrode and is electrically connected to the pixel electrode, and a common voltage subsidiary line formed on substantially the same layer as the pixel electrode, spaced apart from the pixel electrode, disposed under the common electrode, and electrically connected to the common electrode.

Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Abstract: A micro device and manufacturing method thereof. The micro device includes a substrate, an insulation layer, and a solution. The insulation layer is disposed on the substrate to define a channel portion and an extension portion communicated with the channel portion. The solution is location in the channel portion. Part of the solution flows to the extension portion by capillary force between the channel portion and the extension portion.

Abstract: The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.

Abstract: The present invention provides a method for producing a layer of organic material. The method comprises providing onto a substrate, under deposition conditions, a layer of a solution comprising said organic material dissolved in a solvent; optionally partially drying said layer of solution; thereafter annealing said layer of solution, said annealing being applied before said layer of solution has been dried out completely and the duration of said annealing being limited such that said layer of solution is not dried out completely during the annealing, said annealing inducing reflow of said layer of solution; and thereafter drying out said layer of solution, said drying out being controlled such that it is performed slower than it would be under deposition conditions. The resulting layer of organic material shows an improvement of both the micro quality and the macro quality, leading to obtaining a fully continuous film with minor surface roughness and an accurate line resolution and edge definition.

Abstract: [Problems] To provide an organic transistor which can achieve a reduced leak current from a gate electrode. [Solving Means] An organic transistor including a substrate 1, a pair of a source electrode 4 and a drain electrode 5, an organic semiconductor layer 6 provided between the source electrode 4 and the drain electrode 5, and a gate electrode 2 provided in association with the organic semiconductor 6 with a gate insulating layer 3 interposed therebetween, wherein the gate insulating layer 3 has a stacked structure including at least an organic insulating layer 3a and an inorganic barrier layer 3b.

Abstract: The invention relates to a method for producing an electronic circuit, and to an electronic circuit, having at least one organic electrical functional layer and at least one data storage unit, the data storage unit being configured with two electrically conductive layer contacts. The two electrically conductive layer contacts are arranged alongside one another and are electrically conductively connected to one another either by an electrically conductive dry substance or by an electrically conductive solidified substance.

Abstract: The invention relates to an electronic component comprising a flexible substrate, on the surface of which is arranged a layer stack composed of thin layers, containing at least one electrical functional layer composed of an electrically conductive or semiconducting material, wherein the component comprises at least a first material, a layered second material and a layered third material and wherein, as seen perpendicular to the surface of the substrate the first material is followed by the second material and the second material is followed by the third material, wherein a first adhesion force of the second material to the first material is lower than a second adhesion force of the third material to the first material and the second material has at least one opening, via which the third material is connected to the first material in order to increase the adhesion of the second material to the first material.

Abstract: A process for producing high performance organic thin film transistors in which the molecules in the organic thin film are highly ordered and oriented to maximize the mobility of current charge carriers. The uniform monolayer surface over various substrate materials so formed, result in a more reproducible and readily manufacturable process for higher performance organic field effect transistors that can be used to create large area circuits using a range of materials.

Abstract: There is provided a backplane for an organic electronic device. The backplane has a TFT substrate having a multiplicity of electrode structures thereon; a bank structure defining pixel areas over the electrode structures; and a thin layer of insulative inorganic material between the electrode structures and the bank structures. The bank structure is removed from and not in contact with the electrode structures by a distance of at least 0.1 microns.

Abstract: An organic thin film transistor comprising an organic semiconductor layer that does not cause a coffee stain effect and can prevent an imperfect contact with source and drain electrodes, and a flat panel display apparatus comprising the organic thin film transistor are provided. The organic thin film transistor comprises a gate electrode; source and drain electrodes insulated from the gate electrode; and an organic semiconductor layer insulated from the gate electrode and contacts the source and drain electrodes, wherein the organic semiconductor layer has a circular shape when viewed through a substrate on which the organic thin film transistor is formed, and an edge portion of at least one of the source and drain electrodes contacting the organic semiconductor layer having a curved shape that is concave toward the organic semiconductor layer.

Abstract: A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.

Abstract: A sensor whose size can be decreased without marring the performance and which can be installed in a narrow place, an electric device, and a method for easily manufacturing the electric device. By vacuum deposition of semiconductor on a columnar body or by applying a melt, solution, or gel of semiconductor to the columnar body, a coating of semiconductor is formed. Four insulating wires, a stripe band of the connected four insulating wires are wound around the columnar body. Then, one of the insulating wires is removed to form a copper wire in the vacant portion by copper vacuum deposition. Lastly, another insulating wire not adjacent to the copper wire is removed to form an aluminum wire in the vacant portion by aluminum vacuum deposition. By measuring the resistance between the copper and aluminum wires, the intensity of light striking the semiconductor can be determined.

Abstract: A method of microwave annealing for enhancing the properties of organic electronic devices is provided, including the steps of providing organic electronic devices and then microwave annealing the organic electronic devices. Because microwave annealing is non-contact and requires only a short time for annealing, and also because it anneals a target selectively and may anneal only the organic active layer of organic electronic device, microwave annealing allows organic molecules in the organic active layer to be rearranged quickly, so as to improve the arrangement of the organic molecules, and this in turn elevates the quantum efficiency thereof and enhances the properties of the organic electronic devices.

Abstract: Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×1018 atoms/cm3 of metal impurities. The spin-coatable liquid is substantially free of particle impurities having a diameter of greater than about 500 nm.