Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

Abstract: An organic semiconductor device includes a carrier, a source, a drain, an organic semiconductor single-crystalline channel layer, an organic insulation layer and a gate. The source and the drain are disposed on an upper surface of the carrier. The source and the drain are disposed in parallel and a portion of the carrier is exposed between the source and the drain. The organic semiconductor single-crystalline channel layer is disposed on the upper surface of the carrier and covers a portion of the source, a portion of the drain and the portion of the carrier exposed by the source and the drain. The organic insulation layer covers the carrier, the source, the drain and the organic semiconductor single-crystalline channel layer. The gate is disposed on the organic insulation layer and corresponds to a position of the portion of the carrier exposed by the source and the drain.

Abstract: An active region or channel for printed, organic or plastic electronics or polymer semiconductors, such as organic field-effect transistors (OFETs), is obtained by using an enhanced inkjet drop-cast printing technique. A two-liquid system is employed to achieve the direct growth of well-oriented organic crystals at the active region of channel. High-performance electrical properties exhibiting high carrier mobility and low threshold voltage are obtained due to the proper orientation of molecules in the grown crystal in a highest mobility direction, due to the absence of grain boundaries, and due to low trap densities. The hydrophobic-hydrophilic interactions between the liquids utilized, which results in the fabrication of low-cost and mass-producible printable electronic devices for applications in flexible displays, electronic signages, photovoltaic panels, membrane keyboards, radio frequency identification tags (RFIDs), electronic sensors, and integrated electronic circuits.

Abstract: The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.

Abstract: In an organic light emitting diode (OLED) display and a manufacturing method, an organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer pattern formed on the substrate and including a first capacitor electrode; a gate insulating layer covering the semiconductor layer pattern; a first conductive layer pattern formed on the gate insulating layer and including a second capacitor electrode having at least a portion overlapping the first capacitor electrode; an interlayer insulating layer having a capacitor opening exposing a portion of the second capacitor electrode and covering the second capacitor electrode; and a second conductive layer pattern formed on the interlayer insulating layer, wherein the capacitor opening includes a first transverse side wall parallel to and overlapping the second capacitor electrode, a second transverse side wall parallel to and not overlapping the second capacitor electrode, and a longitudinal side wall connecting the first transverse side wall an

Abstract: An organic composition for a semiconductor device includes a compound for an organic semiconductor device including a structural unit; and a metal-containing compound selected from a transition element-containing compound, a lanthanide-containing compound, and a combination thereof, which results in improved charge mobility due to a reduced grain boundary.

Abstract: An organic semiconductor polymer, a transistor including an organic semiconductor polymer and methods of fabricating the same are provided, the organic semiconductor polymer including an aromatic or heteroaromatic main chain and at least one of a fluoro or a perfluoroalkyl at a polymer terminal end.

Abstract: A foldable thin film transistor (TFT) is provided, the foldable TFT including: a foldable substrate; source and drain electrodes interconnected on the foldable substrate; a channel layer including nanofibers of an organic semiconductor connecting the source and drain electrodes; a gate electrode electronically connected with the source and drain electrodes and the channel layer; and a gate insulating layer disposed between the channel layer and the gate electrode and comprising an ionic liquid and a resin.

Abstract: The present invention relates to a write-once and read-many-times memory device and the fabricating method thereof. The structure of the memory device comprises: a substrate, a first electrode, a double helix biopolymer layer and a second electrode, and a plurality of metal nanoparticles are distributed in the double helix biopolymer layer. The first electrode is disposed on the substrate, the double helix biopolymer layer is disposed on the first electrode and the substrate, and the second electrode is disposed on the double helix biopolymer layer. When illuminating, the memory device will produce a low-conductivity state and high-conductivity state for writing data. Later, when a voltage is applied to the first electrode and the second electrode, the data will be read.

Abstract: The disclosed system, device and method for molecular-scale electronic switching generally includes a carbon nanotube, an anode, a cathode and two conductive particles encapsulated within the carbon nanotube, wherein the particles are configured to move between high resistance and low resistance states. Disclosed features and specifications may be variously controlled, adapted or otherwise optionally modified to realize improved switching function.

Abstract: A method of manufacturing a thin film transistor is provided. The method includes forming a lower organic semiconductor layer, forming an upper organic semiconductor layer on the lower organic semiconductor layer, the upper organic semiconductor layer having solubility and conductivity higher than those of the lower organic semiconductor layer, forming a source electrode and a drain electrode spaced apart from each other and respectively overlapping the upper organic semiconductor layer, and dissolving the upper organic semiconductor layer selectively by using the source electrode and the drain electrode as a mask.

Abstract: A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer.

Abstract: The invention provides a novel memory for which process technology is relatively simple and which can store multivalued information by a small number of elements. A part of a shape of the first electrode in the first storage element is made different from a shape of the first electrode in the second storage element, and thereby voltage values which change electric resistance between the first electrode and the second electrode are varied, so that one memory cell stores multivalued information over one bit. By partially processing the first electrode, storage capacity per unit area can be increased.

Abstract: The present invention relates to a write-once and read-many-times memory device and the fabricating method thereof. The structure of the memory device comprises: a substrate, a first electrode, a double helix biopolymer layer and a second electrode, and a plurality of metal nanoparticles are distributed in the double helix biopolymer layer. The first electrode is disposed on the substrate, the double helix biopolymer layer is disposed on the first electrode and the substrate, and the second electrode is disposed on the double helix biopolymer layer. When illuminating, the memory device will produce a low-conductivity state and high-conductivity state for writing data. Later, when a voltage is applied to the first electrode and the second electrode, the data will be read.

Abstract: A semiconductor device includes an organic semiconductor layer, and a protective film. The protective film covers a side wall of the organic semiconductor layer. An insulating partition wall is disposed on the substrate. The partition wall includes an opening. The organic semiconductor layer includes a first portion that is disposed within the opening of the partition wall. The protective film fills the inside of the opening of the partition wall.

Abstract: This invention provides a vertical organic transistor that can realize large current modulation and a reduction in production cost, and a method for manufacturing the vertical organic transistor. The vertical organic transistor comprises an upper electrode, a lower electrode, an organic semiconductor provided between both the electrodes, and an intermediate electrode provided within the organic semiconductor, the intermediate electrode being a layered continuous body comprising a continuous insulating metal compound and particulate metals distributed within the insulating metal compound.

Abstract: A method of fabricating a self-aligned top-gate organic transistor comprises depositing a photoresist material over the dielectric material, and exposing the photoresist material to irradiation through the substrate using the source and drain electrodes as a mask. The exposure defines a region for deposition of the gate electrode.

Abstract: The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.

Abstract: A memory element is formed by providing an organic compound between a pair of upper and lower electrodes. However, when the electrode is formed over a layer containing an organic compound, a temperature is limited because the layer containing the organic compound can be influenced depending on a temperature for forming the electrode. A forming method for the electrode is limited due to this limitation of a temperature. Therefore, there are problems that an expected electrode cannot be formed, and miniaturization of an element is inhibited. A semiconductor device includes a memory element and a switching element which are provided over a substrate having an insulating surface. The memory element includes first and second electrodes, and a layer containing an organic compound, which are provided on the same plane. A current flows from the first electrode to the second electrode. The first electrode is electrically connected to the switching element.

Abstract: A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.

Abstract: A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.

Abstract: A foldable thin film transistor (TFT) is provided, the foldable TFT including: a foldable substrate; source and drain electrodes interconnected on the foldable substrate; a channel layer including nanofibers of an organic semiconductor connecting the source and drain electrodes; a gate electrode electronically connected with the source and drain electrodes and the channel layer; and a gate insulating layer disposed between the channel layer and the gate electrode and comprising an ionic liquid and a resin.

Abstract: A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.

Abstract: A switching element comprising: an insulative substrate; a first electrode and a second electrode provided on one surface of the insulative substrate; and an interelectrode gap which is provided between the first electrode and the second electrode, and which has a gap on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen.

Abstract: A semiconductor substrate includes: a thin-film transistor including an organic semiconductor layer; and a light absorption-transmission layer provided in a pathway that leads external light to the organic semiconductor layer. The light absorption-transmission layer absorbs light of a wavelength range that includes at least a part of a light absorption wavelength range of the organic semiconductor layer, and allows light of a remaining wavelength range to pass therethrough.

Abstract: A semiconductor device includes a conductive layer formed in the junction region and a boundary layer arranged to wrap a side and a bottom of the conductive layer.

Abstract: A circuit board includes: a first wiring layer provided on a substrate; an insulating layer including an opening, the insulating layer being provided on the first wiring layer; a surface-energy control layer provided in a region opposed to the opening of the insulating layer on the first wiring layer, the surface-energy control layer controlling surface energy of the first wiring layer; a semiconductor layer provided in a selective region on the insulating layer; and a second wiring layer on the insulating layer, the second wiring layer being electrically connected to the semiconductor layer, and being electrically connected to the first wiring layer through the opening.

Abstract: A photoelectric conversion device that contains a polymer compound having a structural unit represented by formula (1) has high photoelectric conversion efficiency. (wherein, X1 and X2 are the same or different and represent a nitrogen atom or ?CH—. Y1 represents a sulfur atom, an oxygen atom, a selenium atom, —N(R1)— or —CR2?CR3—. R1, R2 and R3 are the same or different and represent a hydrogen atom or a substituent. W1 represents a cyano group, a monovalent organic group having a fluorine atom or a halogen atom. W2 represents a cyano group, a monovalent organic group having a fluorine atom, a halogen atom or a hydrogen atom.

Abstract: Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

Abstract: A method of manufacturing a thin film transistor is provided. The method includes forming a lower organic semiconductor layer, forming an upper organic semiconductor layer on the lower organic semiconductor layer, the upper organic semiconductor layer having solubility and conductivity higher than those of the lower organic semiconductor layer, forming a source electrode and a drain electrode spaced apart from each other and respectively overlapping the upper organic semiconductor layer, and dissolving the upper organic semiconductor layer selectively by using the source electrode and the drain electrode as a mask.

Abstract: An organic thin film transistor including a substrate with an organic insulating layer; a source and drain electrode layer electro deposited on the substrate; a second metal material source and drain electrode layer covering the first layer, the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer; and an organic semiconductor layer over a region between the source electrode and the drain electrode

Abstract: Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

Abstract: An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

Abstract: An organic light-emitting display apparatus may include: a planarization layer disposed on a substrate and covering a plurality of thin film transistors; pixel electrodes, each comprising a light emission portion and anon-light emission portion, the light emission portion being arranged on the planarization layer in a first grid pattern; via-holes, each connecting one thin film transistor and one pixel electrode through the planarization layer, and arranged in a second grid pattern offset from the first grid pattern; dummy via-holes spaced apart from the via-holes; a pixel-defining layer (PDL) disposed on the planarization layer and covering the via-holes, the dummy via-holes, and the non-light emission portion of the pixel electrodes; an organic layer disposed on the light emission portion and comprising an emissive layer; and an opposite electrode disposed on the organic layer.

Abstract: The present invention provides a method of patterning an electronic or photonic material on a substrate comprising: forming a film (polymer A) of said electronic or photonic material on said substrate; and using a fluoropolymer (e.g. cytop) to protect regions of said electronic or photonic material during a patterning process.

Abstract: Method for manufacturing a semiconductor device, which may include (a) forming a coating film on a substrate by applying a coating liquid including a polymer conductive material dissolved in an insulating solvent on the substrate after the step (a); (b) heat-treating the coating film; and (c) forming, before or after the steps (a) and (b), a gate electrode on the substrate. Herein, a surface layer portion is an insulating layer, and an inner layer portion is an organic semiconductor layer, and the surface layer portion and the inner layer portion are formed separate from each other to allow the surface layer portion and the inner layer portion to be used as a gate insulating film and a channel of a field-effect transistor, respectively.

Abstract: It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.

Abstract: Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.

Abstract: A semiconductor material and an organic rectifier diode can be used for organic-based RFID (Radio Frequency Identification) tags. The semiconducting material for an organic diode has a metal complex as a p-dopant for doping a hole-conducting organic matrix material, wherein the metal complex is a metal complex with Lewis acid properties, which acts as an electron pair acceptor.

Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.

Abstract: Provided is an organic electronic device exhibiting excellent conductivity and transparency of an electrode, and low driving voltage, together with en excellent storing property and excellent lifetime. Also disclosed is an organic electronic device possessing a transparent substrate and provided thereon, a first transparent electrode, a second electrode and an organic functional layer provided between the first transparent electrode and the second electrode, wherein the first transparent electrode and the second electrode are opposed to each other, and a transparent conductive layer containing a conductive polymer and an aqueous binder is provided between the first transparent electrode and the organic functional layer.

Abstract: The present invention provides a method of forming a semiconducting device comprising an organic semiconducting material, which method comprises: heating a composition comprising the organic semiconducting material to a temperature at or above the melting point or glass transition temperature of the composition to form a melt; cooling the melt to a temperature below the melting point or glass transition temperature of the composition; and wherein a first substance or object capable of inhibiting and/or preventing dewetting is adjacent the composition before or during heating, or the composition further comprises an agent capable of inhibiting and/or preventing dewetting.

Abstract: The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.

Abstract: The present invention relates to a method for manufacturing an organic electronic device, comprising providing by electro-deposition an electrode to a surface of an electro-active material—the electro-active material comprising an organic electro-active compound—or providing said electrode to a surface of a substrate for said electro-active material, after which the electro-active material is applied to a surface of the electrode, wherein the electro-deposition comprises the use of a plating liquid comprising an ionic liquid and metal or metalloid ions which metal or metalloid ions are reduced and deposited to form the electrode.

Abstract: The present disclosure provides a thin film transistor which includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The semiconducting layer is electrically connected with the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by the insulating layer. At least one of the gate electrode, the drain electrode, the source electrode includes a carbon nanotube composite layer.

Abstract: An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic hydrocarbon group or an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

Abstract: An organic thin-film transistor (100) includes, on a substrate (1), a gate electrode (2), a gate insulating layer (3), a source electrode (4), and a drain electrode (5). Part of surface of the source electrode (4) is covered by a first organic molecular layer (6a). Part of surface of the drain electrode (5) is covered by a second organic molecular layer (6b). An organic semiconductor layer (7) is formed so as to cover the organic molecular layer (6) (first and second organic molecular layers (6a, 6b)), the source electrode (4), and the drain electrode (5), and get into a channel section (20) which is a gap between the electrodes. Since the organic thin-film transistor (100) has the organic molecular layer (6) covering at least part of surface of each of the source and drain electrodes (4, 5), hole-electron injection efficiency is increased. This makes it possible to obtain large current.

Abstract: When an electrode is formed over an organic layer, a temperature is limited because the organic layer can be influenced depending on a temperature in forming the electrode. Therefore, there are problems that an expected electrode cannot be formed, and miniaturization of an element is inhibited. The present invention provides a structure of an organic memory element in which two electrodes are provided in the same layer as two terminals of the memory element, and a layer containing an organic compound is provided between the electrodes. By narrowing a distance between the two electrodes, writing can be performed at low voltage. In addition, a structure of the memory element is simplified, and the area of the memory element can be reduced.

Abstract: An organic electric-field element includes an elongated support base member, a first electrode provided on the support base member, an organic layer provided to cover the first electrode, and a second electrode provided to cover the organic layer. At one end portion of the support base member, a two-layer structure region including the support base member and the first electrode is provided, and a three-layer structure region including the support base member, the first electrode, and the organic layer is provided, extending continuously from the other end of the two-layer structure region. At the other end portion of the support base member, a two-layer structure region including the support base member and the second electrode is provided, and a three-layer structure region including the support base member, the second electrode, and the organic layer is provided, extending continuously from one end of the two-layer structure region.

Abstract: A method for forming an organic material layer on a substrate in an in-line deposition system is disclosed. In one aspect, the organic material is deposited with a predetermined non-constant deposition rate profile, which includes a first predetermined deposition rate range provided to deposit at least a first monolayer of the organic material layer with a first predetermined average deposition rate and a second predetermined deposition rate range provided to deposit at least a second monolayer of the organic material layer with a second predetermined average deposition rate. The injection of organic material through the openings of the injector is controlled for realizing the predetermined deposition rate profile.