Field-effect Device (e.g., Tft, Fet) (epo) Patents (Class 257/E51.005)
  • Patent number: 9035004
    Abstract: Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.
    Type: Grant
    Filed: August 1, 2012
    Date of Patent: May 19, 2015
    Assignee: Polyera Corporation
    Inventors: Antonio Facchetti, Chun Huang, Hualong Pan
  • Patent number: 9029695
    Abstract: The present teachings relate to new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: May 12, 2015
    Assignee: Raynergy Tek Inc.
    Inventor: Antonio Facchetti
  • Patent number: 9006725
    Abstract: The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C—R, wherein R is H or a C1-C40 alkyl group, R2, at each occurrence, is independently selected from H, a C1-40 alkyl group, a C2-40 alkenyl group, a C1-40 haloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the C1-40 alkyl group, the C2-40 alkenyl group, and the C1-40 haloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, —NO2, OH, NH2, —NH(C1-20 alkyl), N(C1-20 alkyl)2, —S(O)2OH, —CHO, —C(O)—C1-20 alkyl, —C(O)OH, —C(O)—OC1-20 alkyl, —C(O)NH2, —C(O)NH—C1-20 alkyl, —C(O)N(C1-20 alkyl)2, —OC1-20 alkyl, —SiH3, —SiH(C1-20 alkyl)2, —SiH2(C1-20 alkyl), and —Si(C1-20 alkyl)3; and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, —CN, —NO2, OH,
    Type: Grant
    Filed: July 4, 2012
    Date of Patent: April 14, 2015
    Assignee: BASF SE
    Inventors: Hiroyoshi Noguchi, Florian Doetz, Ashok Kumar Mishra, Subramanian Vaidyanathan, Mai Minh-Tien
  • Patent number: 9000523
    Abstract: An organic light-emitting display device including a TFT comprising an active layer, a gate electrode comprising a lower gate electrode and an upper gate electrode, and source and drain electrodes insulated from the gate electrode and contacting the active layer; an organic light-emitting device electrically connected to the TFT and comprising a pixel electrode formed in the same layer as where the lower gate electrode is formed; and a pad electrode electrically coupled to the TFT or the organic light emitting device and comprising a first pad electrode formed in the same layer as in which the lower gate electrode is formed, a second pad electrode formed in the same layer as in which the upper gate electrode is formed, and a third pad electrode comprising a transparent conductive oxide, the first, second, and third pad electrodes being sequentially stacked.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: April 7, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong-Hyun Choi, Jae-Hwan Oh
  • Patent number: 8999776
    Abstract: Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT.
    Type: Grant
    Filed: August 27, 2014
    Date of Patent: April 7, 2015
    Assignee: Sony Corporation
    Inventor: Akihiro Nomoto
  • Patent number: 8999748
    Abstract: According to example embodiments, a method of manufacturing an organic thin film transistor includes sequentially forming a gate electrode, a gate insulator, a source electrode, and a drain electrode on a substrate, forming a first self-assembled monolayer on the source electrode and the drain electrode from a first self-assembled monolayer precursor, forming a second self-assembled monolayer on the gate insulator from a second self-assembled monolayer precursor that is different from the first self-assembled monolayer precursor, and forming an organic semiconductor on the first self-assembled monolayer and the second self-assembled monolayer. The first self-assembled monolayer and the second self-assembled monolayer may be formed simultaneously or sequentially in a single container. An organic thin film transistor may be manufactured according to the method. A display device may include the organic thin film transistor.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: April 7, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-Young Jung, Joo-Young Kim, Hyeok Kim
  • Patent number: 8987722
    Abstract: A carbon-based semiconductor structure includes a substrate and a gate stack. The gate stack includes a carbon-based gate electrode formed on the substrate. The gate stack also includes a gate dielectric formed on the carbon-based gate electrode. The gate stack further includes a carbon-based channel formed on the gate dielectric.
    Type: Grant
    Filed: September 19, 2013
    Date of Patent: March 24, 2015
    Assignee: International Business Machines Corporation
    Inventor: Damon Farmer
  • Patent number: 8980665
    Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: March 17, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichiro Sakata
  • Patent number: 8975621
    Abstract: An organic light emitting display device includes a first substrate including a pixel area and a non-pixel area; a pixel array formed on the pixel area of the first substrate; a protective layer formed over the pixel array, and having a trench that exposes at least a portion of the non-pixel area; a second substrate disposed above the first substrate; a sealing material disposed between the second substrate and the protective layer at the outside of the trench; and a getter disposed between the second substrate and the first substrate exposed by the trench. Moisture and/or oxygen penetrated through the sealing material and the protective layer, which are disposed at a side of the organic light emitting display device, are absorbed into the getter, thereby improving the lifespan of the organic light emitting display device.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: March 10, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Young-Min Kim, Deok-Chan Yoon, Kie-Hyun Nam
  • Patent number: 8963147
    Abstract: A thin film transistor includes, on an insulating substrate, at least: a gate electrode; a gate insulating layer; a source electrode; a drain electrode; a metal oxide layer including a semiconductor region and an insulating region, each of the semiconductor region and the insulating region being composed of a same metal oxide material; and an insulating protective layer. The semiconductor region includes a region between the source electrode and the drain electrode, and is overlaid on a part of each of them. The semiconductor region is formed between the gate insulating layer and the insulating protective layer to abut on at least one of them. The electric conductivity of the semiconductor region is higher than that of the insulating region.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: February 24, 2015
    Assignee: Toppan Printing Co., Ltd.
    Inventors: Chihiro Imamura, Yukari Miyairi, Hiroaki Koyama
  • Patent number: 8963128
    Abstract: A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein at least one of R1 to R6 is a substituent, and the remaining R1 to R6 are a hydrogen atom.
    Type: Grant
    Filed: August 14, 2009
    Date of Patent: February 24, 2015
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Yuki Nakano, Masatoshi Saito, Hiroaki Nakamura, Hirofumi Kondo
  • Patent number: 8946710
    Abstract: A semiconductor device with high function, multifunction and high added value. The semiconductor device includes a PLL circuit that is provided over a substrate and outputs a signal with a correct frequency. By providing such a PLL circuit over the substrate, a semiconductor device with high function, multifunction and high added value can be achieved.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: February 3, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kiyoshi Kato, Takeshi Osada
  • Patent number: 8937013
    Abstract: A method for easily forming a region with conductivity and high wettability without a step for removing a photocatalytic reaction layer, which is formed over a conductive layer, is proposed. The photocatalytic reaction layer is formed over a photocatalytic conductive layer, and the photocatalytic conductive layer is irradiated with ultraviolet light to form a region with conductivity and higher wettability than the photocatalytic reaction layer on a surface of the photocatalytic conductive layer which is irradiated with ultraviolet light. Note that for the photocatalytic conductive layer, a layer having a photocatalytic property of which resistivity is lower than or equal to 1×10?2 ? cm can be used.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: January 20, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Masafumi Morisue
  • Patent number: 8916852
    Abstract: An organic light emitting display including a substrate, a semiconductor layer formed on the substrate, an organic light emitting diode formed on the semiconductor layer, an encapsulant formed on a periphery of the substrate which is an outer periphery of the organic light emitting diode and the semiconductor layer; and an encapsulation substrate attached to the encapsulant.
    Type: Grant
    Filed: April 13, 2007
    Date of Patent: December 23, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: JongYun Kim, Byoungdeog Choi
  • Patent number: 8907344
    Abstract: A thin film transistor element is formed in each of adjacent first and second apertures defined by partition walls. In plan view of a bottom portion of the first aperture, a center of area of a liquid-philic layer portion is offset from a center of area of the bottom portion in a direction opposite a direction of the second aperture, and in plan view of a bottom portion of the second aperture, a center of area of a liquid-philic layer portion is offset from a center of area of the bottom portion in a direction opposite a direction of the first aperture.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: December 9, 2014
    Assignee: Panasonic Corporation
    Inventors: Yuko Okumoto, Akihito Miyamoto, Takaaki Ukeda
  • Patent number: 8907325
    Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a semi-conductive layer, a gate insulator, a source and a drain. The gate insulator is located between the gate and the semi-conductive layer. A light shows a specific color after passing through the gate insulator. The source and the drain are disposed on the semi-conductive layer. A pixel structure and a liquid crystal display panel having the pixel structure are also provided. The liquid crystal display panel can display colorful images without disposing a color filter array additionally so that the manufacturing process of the liquid crystal panel is simple and the manufacturing cost of the liquid crystal panel is low.
    Type: Grant
    Filed: October 26, 2007
    Date of Patent: December 9, 2014
    Assignee: Au Optronics Corporation
    Inventors: Chiao-Shun Chuang, Fang-Chung Chen, Han-Ping David Shieh
  • Patent number: 8896778
    Abstract: It is an object to provide a liquid crystal display device including a thin film transistor with high electric characteristics and high reliability. As for a liquid crystal display device including an inverted staggered thin film transistor of a channel stop type, the inverted staggered thin film transistor includes a gate electrode, a gate insulating film over the gate electrode, a microcrystalline semiconductor film including a channel formation region over the gate insulating film, a buffer layer over the microcrystalline semiconductor film, and a channel protective layer which is formed over the buffer layer so as to overlap with the channel formation region of the microcrystalline semiconductor film.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: November 25, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 8895375
    Abstract: Provided is a novel structure of a field effect transistor using a metal-semiconductor junction. The field effect transistor includes a wiring which is provided over a substrate and also functions as a gate electrode; an insulating film which is provided over the wiring, has substantially the same shape as the wiring, and also functions as a gate insulating film; a semiconductor layer which is provided over the insulating film and includes an oxide semiconductor and the like; an oxide insulating layer which is provided over the semiconductor layer and whose thickness is 5 times or more as large as the sum of the thickness of the insulating film and the thickness of the semiconductor layer or 100 nm or more; and wirings which are connected to the semiconductor layer through openings provided in the oxide insulating layer.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: November 25, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yasuhiko Takemura
  • Patent number: 8895963
    Abstract: An organic semiconductor material is represented by the following formula (F): wherein A represents a cyclic conjugated skeleton structure formed of one or more aromatic rings, and R1 and R2 each independently represent a substituted or unsubstituted alkyl group. The organic semiconductor material has high electron mobility and high on/off ratio, and can form an organic semiconductor thin film by a solution process making use of its solution.
    Type: Grant
    Filed: May 11, 2010
    Date of Patent: November 25, 2014
    Assignees: Dainichiseika Color & Chemicals Mfg. Co., Ltd.
    Inventors: Ken-ichi Nakayama, Junji Kido, Yong-Jin Pu, Yohei Hashimoto, Naomi Oguma, Naoki Hirata
  • Patent number: 8895984
    Abstract: The present invention relates to a capacitor having a configuration in which capacitors are coupled in series to each other. The capacitor formed on a substrate according to an exemplary embodiment of the present invention includes: a polysilicon layer doped with an impurity; a first insulation layer formed on the polysilicon layer; a first metal layer formed on the first insulation layer and including first and second areas; a second insulation layer formed on the first metal layer; and a second metal layer formed on the second insulation layer and coupled to the second area of the first metal layer. The second metal layer is overlapped with at least a part of the first area of the first metal layer.
    Type: Grant
    Filed: August 17, 2005
    Date of Patent: November 25, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventor: Won-Kyu Kwak
  • Patent number: 8890123
    Abstract: A thin film transistor has a semiconducting layer comprising a polythiophene and carbon nanotubes. The semiconducting layer exhibits high mobility and high current on/off ratio.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: November 18, 2014
    Assignee: Samsung Electronics Co. Ltd.
    Inventor: Yiliang Wu
  • Patent number: 8884290
    Abstract: A thin film transistor array panel, a display device including the thin film transistor array panel, and a method for manufacturing the display device. The thin film transistor array panel includes a substrate having first and second surfaces, a first thin film form formed on the first surface and including a first electrode, and a second thin film form formed on the second surface and including a second electrode, to thereby improve the viewing angle and contrast ratio of the display device.
    Type: Grant
    Filed: November 13, 2007
    Date of Patent: November 11, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Keun-Chan Oh, Yong-Kuk Yun, Woo-Jin Bae
  • Patent number: 8883958
    Abstract: Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: November 11, 2014
    Assignee: Raynergy Tek Inc.
    Inventors: Antonio Facchetti, Hakan Usta, Hualong Pan, Martin Drees, Mitchell Denti
  • Patent number: 8878261
    Abstract: A semiconductor device comprising a MOS transistor provided in a semiconductor region, wherein a source region and a drain region of the MOS transistor have a first conductivity type, the source region includes a first region including an upper portion of a boundary portion between the source region and a channel region of the MOS transistor, and a second region including an lower portion of the boundary portion, and the first region contains an impurity having a second conductivity type different from the first conductivity type, in an amount larger than that in the second region.
    Type: Grant
    Filed: May 8, 2013
    Date of Patent: November 4, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventor: Akira Ohtani
  • Patent number: 8866132
    Abstract: Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: October 21, 2014
    Assignee: Sony Corporation
    Inventor: Akihiro Nomoto
  • Patent number: 8865516
    Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: October 21, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshifumi Ohta, Go Mori, Hirohiko Nishiki, Yoshimasa Chikama, Tetsuya Aita, Masahiko Suzuki, Okifumi Nakagawa, Michiko Takei, Yoshiyuki Harumoto, Takeshi Hara
  • Patent number: 8860008
    Abstract: An active region or channel for printed, organic or plastic electronics or polymer semiconductors, such as organic field-effect transistors (OFETs), is obtained by using an enhanced inkjet drop-cast printing technique. A two-liquid system is employed to achieve the direct growth of well-oriented organic crystals at the active region of channel. High-performance electrical properties exhibiting high carrier mobility and low threshold voltage are obtained due to the proper orientation of molecules in the grown crystal in a highest mobility direction, due to the absence of grain boundaries, and due to low trap densities. The hydrophobic-hydrophilic interactions between the liquids utilized, which results in the fabrication of low-cost and mass-producible printable electronic devices for applications in flexible displays, electronic signages, photovoltaic panels, membrane keyboards, radio frequency identification tags (RFIDs), electronic sensors, and integrated electronic circuits.
    Type: Grant
    Filed: October 23, 2009
    Date of Patent: October 14, 2014
    Assignee: SNU R&DB Foundation
    Inventors: Seonghoon Lee, Jung-Pyo Hong
  • Patent number: 8860032
    Abstract: A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.
    Type: Grant
    Filed: May 14, 2009
    Date of Patent: October 14, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Kwon Choo, Joon-Hoo Choi, Kyu-Sik Cho, Seung-Kyu Park, Yong-Hwan Park, Sang-Ho Moon
  • Patent number: 8859326
    Abstract: A thin film transistor including a contact layer that contains an organic semiconductor layer over a substrate, a contact layer containing an organic semiconductor material, an acceptor or donor material provided between an organic semiconductor layer, and a source electrode and a drain electrode at opposite end portions of the contact layer; and a method of fabricating same.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: October 14, 2014
    Assignee: Sony Corporation
    Inventors: Shinichi Ushikura, Mao Katsuhara
  • Patent number: 8853349
    Abstract: Conjugated polymers and small molecules including the nonplanar aromatic 1,6-methano[10]annulene ring structure along with aromatic subunits, such as diketopyrrolopyrrole, and 2,1,3-benzothiadiazole, substituted with alkyl chains in a “Tail In,” “Tail Out,” or “No Tail” regiochemistry are disclosed.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: October 7, 2014
    Inventors: John D. Tovar, Benjamin C. Streifel, Patricia A. Peart
  • Patent number: 8853347
    Abstract: An organic semiconductor compound may include a structural unit represented by the aforementioned Chemical Formula 1 and an organic thin film and an electronic device may include the organic semiconductor compound.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: October 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong il Park, Bang Lin Lee, Jong Won Chung
  • Patent number: 8846441
    Abstract: There is provided an anode for an organic electronic device. The anode is a conducting inorganic material having an oxidized surface layer. The surface layer is non-conductive and hole-transporting.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: September 30, 2014
    Assignee: E I du Pont de Nemours and Company
    Inventor: Shiva Prakash
  • Patent number: 8847226
    Abstract: A transistor includes a substrate. A first electrically conductive material layer is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer includes a reentrant profile. The second electrically conductive material layer also overhangs the first electrically conductive material layer.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: September 30, 2014
    Assignee: Eastman Kodak Company
    Inventors: Lee W. Tutt, Shelby F. Nelson
  • Patent number: 8841712
    Abstract: A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar transistor allows for advantageous insertion into cellular membranes, and the biomimitec character of the gate element operates as an advantageous interface for sensing small amplitude voltages such as transmembrane cell potentials. The nano-pillar transistor can be used in various embodiments to stimulate cells, to measure cell response, or to perform a combination of both actions.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: September 23, 2014
    Assignee: California Institute of Technology
    Inventors: Aditya Rajagopal, Axel Scherer, Michael D. Henry, Sameer Walavalkar, Thomas A. Tombrello, Andrew P. Homyk
  • Patent number: 8835915
    Abstract: An assembly includes a dielectric layer in contact with a semiconductor layer. The dielectric layer includes a crosslinked polymeric material having isocyanurate groups, wherein the dielectric layer is free of zirconium oxide particles. The semiconductor layer includes a non-polymeric organic semiconductor material, and is substantially free of electrically insulating polymer. Electronic components and devices including the assembly are also disclosed.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: September 16, 2014
    Assignee: 3M Innovative Properties Company
    Inventors: Robert S. Clough, James C. Novack, David H. Redinger, Guoping Mao, Michael E. Griffin
  • Patent number: 8835907
    Abstract: The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.
    Type: Grant
    Filed: January 20, 2006
    Date of Patent: September 16, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshitaka Moriya, Yasuko Watanabe, Yasuyuki Arai
  • Patent number: 8835928
    Abstract: A semiconductor device (100) according to the present invention includes a plurality of source lines (16), a thin film transistor (50A), and a diode element (10A) that electrically connects two source lines (16) among the plurality of source lines (16). A connection region (26) in which the source lines (16) and the diode element (10A) are connected to each other includes a first electrode (3), a second electrode (6a), a third electrode (9a), and a fourth electrode (9b). A part of each source line (16) is a source electrode of the thin film transistor (50A), and the second electrode (6a) and the source lines (16) are formed separately from each other.
    Type: Grant
    Filed: September 13, 2011
    Date of Patent: September 16, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hiromitsu Katsui, Takeshi Yaneda, Yoshiyuki Isomura
  • Patent number: 8835926
    Abstract: An organic light emitting display device includes a substrate having transmitting and pixel regions, the pixel regions being separated by the transmitting regions, at least one thin film transistor in each of the pixel regions, a plurality of transparent first conductive lines electrically connected to the thin film transistors and extending across the transmitting regions, a plurality of second conductive lines electrically connected to the thin film transistors and extending across the transmitting regions, a passivation layer, a plurality of pixel electrodes on the passivation layer, the pixel electrodes being separated and positioned to correspond to respective pixel regions, each of the pixel electrodes being electrically connected to and overlapping a corresponding thin film transistor, an opposite electrode overlapping the pixel electrodes in the transmitting and pixel regions, and an organic emission layer between the pixel electrodes and the opposite electrode.
    Type: Grant
    Filed: April 1, 2011
    Date of Patent: September 16, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Seok-Gyu Yoon, Jae-Heung Ha, Jong-Hyuk Lee, Young-Woo Song, Kyu-Hwan Hwang
  • Patent number: 8829494
    Abstract: An organic thin film transistor comprising source and drain electrodes, an organic semiconductor disposed in a channel region between the source and drain electrodes, a gate electrode, and a dielectric disposed between the source and drain electrodes and the gate electrode, wherein the source electrode and the drain electrode comprise at least one different physical and/or material property from each other.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: September 9, 2014
    Assignees: Cambridge Display Technology Limited, Panasonic Corporation
    Inventors: Jonathan James Michael Halls, Craig Edward Murphy, Kiyotaka Mori
  • Patent number: 8810765
    Abstract: An electroluminescence element includes an electroluminescence substrate including a thin film transistor substrate, and a light-emitting layer provided over the thin film transistor substrate and divided by picture-element separating portions so as to correspond to unit picture elements; and a sealing substrate arranged to hermetically seal the light-emitting layer of the electroluminescence substrate. At least one of the electroluminescence substrate and the sealing substrate is a flexible substrate. Spacers are provided between the electroluminescence substrate and the sealing substrate.
    Type: Grant
    Filed: January 11, 2008
    Date of Patent: August 19, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tohru Okabe, Hirohiko Nishiki
  • Patent number: 8809091
    Abstract: A method of manufacturing an organic electroluminescence element having on a belt-formed flexible base material, a first electrode, at least one organic functional layer, and a second electrode, includes continuously forming at least one organic functional layer by coating the same on a first electrode which is formed continuously on the flexible base material in the conveying direction thereof, further forming a second electrode on the organic functional layer, so as to make a plurality of organic electroluminescence element structures in the conveying direction, and then cutting the electroluminescence element structures into individual organic electroluminescence elements so as to manufacture organic electroluminescence elements.
    Type: Grant
    Filed: October 1, 2010
    Date of Patent: August 19, 2014
    Assignee: Konica Minolta Holdings, Inc.
    Inventors: Nobuaki Takahashi, Shigetoshi Kawabe, Natsuki Yamamoto
  • Patent number: 8803148
    Abstract: A thin film transistor may include a substrate, a buffer layer on the substrate, a semiconductor layer formed on the buffer layer, a gate insulating pattern on the semiconductor layer, a gate electrode on the gate insulating pattern, an interlayer insulating layer covering the gate electrode and the gate insulating pattern, the interlayer insulating layer having a contact hole and an opening extending therethrough, the contact hole exposing a source area and a drain area of the semiconductor layer, and the opening exposing a channel area of the semiconductor layer, and a source electrode and a drain electrode formed on the interlayer insulating layer, the source electrode being connected with the source area and the drain electrode being connected with the drain area of the semiconductor layer.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: August 12, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Jong-Ryuk Park, Tak-Young Lee, Jin-Wook Seo, Ki-Yong Lee, Heung-Yeol Na
  • Patent number: 8779426
    Abstract: A thin film transistor for increasing the conductivity of a channel region and suppressing the leakage current of a back channel region, and a display device including the thin film transistor, are discussed. According to an embodiment, the thin film transistor includes a gate electrode arranged on a substrate, a source electrode and a drain electrode spaced from each other on the substrate, a gate insulating film to insulate the gate electrode from the source electrode and the drain electrode, and a semiconductor layer insulated from the gate electrode through the gate insulating film, the semiconductor layer including a channel region and a back channel region, the semiconductor layer made of (In2O3)x(Ga2O3)y(ZnO)z(0?x?5, 0?y?5, 0?z?5), wherein X or Z is greater than Y in the channel region of the semiconductor layer, and Y is greater than X and Z in the back channel region of the semiconductor layer.
    Type: Grant
    Filed: July 12, 2010
    Date of Patent: July 15, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Jae-Seok Heo, Ji-Yeon Seo
  • Patent number: 8772442
    Abstract: Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: July 8, 2014
    Assignee: Polyera Corporation
    Inventors: Zhengguo Zhu, Hualong Pan, Martin Drees, Hakan Usta, Shaofeng Lu, Antonio Facchetti
  • Patent number: 8772074
    Abstract: Provided are an organic light emitting display device and a method for manufacturing the same. The organic light emitting display device comprises a transistor on a substrate, a cathode on the transistor and connected to a source or a drain of the transistor, a bank layer on the cathode and having an opening, a metal buffer layer on the cathode, an organic light emitting layer on the metal buffer layer, and an anode on the organic light emitting layer.
    Type: Grant
    Filed: August 12, 2009
    Date of Patent: July 8, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Jaehee Park, Heeseok Yang, Howon Choi
  • Patent number: 8765522
    Abstract: One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming a first oxide component over a base component, causing crystal growth which proceeds from a surface toward an inside of the first oxide component by first heat treatment to form a first oxide crystal component at least partly in contact with the base component, forming a second oxide component over the first oxide crystal component; and causing crystal growth by second heat treatment using the first oxide crystal component as a seed to form a second oxide crystal component.
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: July 1, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 8766282
    Abstract: An organic light emitting display is disclosed. In one aspect, the display includes a substrate, thin film transistors disposed on the substrate, first, second, and third pixel definition layers disposed on the thin film transistors, respectively having openings, and respectively having first, second, and third heights different from each other, and first, second, and third organic light emitting devices disposed in the openings of the first, second, and third pixel definition layers and connected to the thin film transistors, respectively. The first, second, and third pixel definition layers are spaced apart from each other, the first, second, and third organic light emitting devices have different thicknesses from each other, and the first, second, and third organic light emitting devices have thicknesses respectively corresponding to the first, second, and third heights of the first, second, and third pixel definition layers.
    Type: Grant
    Filed: January 21, 2013
    Date of Patent: July 1, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventor: Seung Uk Noh
  • Patent number: 8759849
    Abstract: A driving substrate includes: a protective layer including an etching surface; and a film layer including one or more convex portions on a surface thereof, the film layer being in contact with a rear surface of the protective layer, the one or more convex portions each having a surface being flush with the etching surface.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: June 24, 2014
    Assignee: Sony Corporation
    Inventors: Kenta Masuda, Keiichi Akamatsu, Yuichi Kato
  • Patent number: 8748215
    Abstract: One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming an oxide component over a base component; forming a first oxide crystal component which grows from a surface toward an inside of the oxide component by heat treatment, and leaving an amorphous component just above a surface of the base component; and stacking a second oxide crystal component over the first oxide crystal component. In particular, the first oxide crystal component and the second oxide crystal component have common c-axes. Same-axis (axial) growth in the case of homo-crystal growth or hetero-crystal growth is caused.
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: June 10, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 8748873
    Abstract: A thin film transistor has a dual semiconducting layer comprising two semiconducting sublayers. The first sublayer comprises a polythiophene and carbon nanotubes. The second sublayer comprises the polythiophene and has no carbon nanotubes. Devices comprises the dual semiconducting layer exhibit high mobility.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: June 10, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yiliang Wu, Ping Liu, Nan-Xing Hu