Plural Magnetic Deposition Layers Patents (Class 29/603.14)
  • Patent number: 10643640
    Abstract: A PMR writer is disclosed wherein a top yoke (TY) is extended toward the air bearing surface (ABS) and below a top coil for faster saturation speed and better frequency extendibility without wide adjacent track erasure trade-off. The TY extension has a front side recessed 0.9-1.3 microns from the ABS, and has a backside below an inner corner of a PP3 trailing shield that is 2-2.6 microns from the ABS. TY thickness is from 0.3-0.8 micron and the TY is preferably used with a 1+1T coil design, and a PP3 trailing shield apex angle of 60° to 80° for better high data rate performance. Magnetic modeling shows rise time is shorter than for a conventional TY. The top yoke design is compatible with various base writer structures. When used in selectable double writers or selectable triple writers, each writer has a separate TY, main pole, and bottom yoke.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: May 5, 2020
    Assignee: Headway Technologies, Inc.
    Inventors: Yue Liu, Ying Liu, Yuhui Tang, Jiun-Ting Lee
  • Patent number: 10614835
    Abstract: A method according to one embodiment includes forming a first portion of a thin film writer structure on a substrate, forming a portion of a write gap at an initial position, a plane of deposition of the portion of the write gap being at an angle of greater than 0° and less than 90° relative to an upper surface of the first portion in the initial position, moving the writer structure to orient the plane of deposition of the portion of the write gap more toward perpendicular to a plane corresponding to a final media-facing surface of the writer structure than the orientation of the plane of deposition of the portion of the write gap in the initial position, and fixing the writer structure in place after the moving.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: April 7, 2020
    Assignee: International Business Machines Corporation
    Inventors: Philipp Herget, Pierre-Olivier Jubert
  • Patent number: 10482905
    Abstract: A dual perpendicular magnetic recording writer is disclosed wherein the better of two writers on a slider is determined by performance testing, and is then integrated into a head gimbal assembly. Main pole layers in the two writers are separated by a cross-track width <10 microns to minimize read-write offset. Each of the driving coil (DC) and bucking coil (BC) have two outer portions forming a U shape with a front side, and each have a center portion connected to the front side proximate to an air bearing surface and a backend contacting an interconnect. A write current passes from a BC outer portion below the main pole in the selected writer through the BC center portion to the interconnect, and then through the DC center portion to a DC outer portion above the main pole in the selected writer. Area density capability mean and sigma are improved.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: November 19, 2019
    Assignee: Headway Technologies, Inc.
    Inventors: Kowang Liu, Yuhui Tang, Moris Dovek
  • Patent number: 10345397
    Abstract: An integrated fluxgate device has a magnetic core on a control circuit. The magnetic core has a volume and internal structure sufficient to have low magnetic noise and low non-linearity. A stress control structure is disposed proximate to the magnetic core. An excitation winding, a sense winding and a compensation winding are disposed around the magnetic core. An excitation circuit disposed in the control circuit is coupled to the excitation winding, configured to provide current at high frequency to the excitation winding sufficient to generate a saturating magnetic field in the magnetic core during each cycle at the high frequency. An isolation structure is disposed between the magnetic core and the windings, sufficient to enable operation of the excitation winding and the sense winding at the high frequency at low power.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: July 9, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Erika Lynn Mazotti, Dok Won Lee, William David French, Byron J R Shulver, Thomas Dyer Bonifield, Ricky Alan Jackson, Neil Gibson
  • Patent number: 10283700
    Abstract: A semiconductor memory structure is provided. The semiconductor memory structure includes a bottom electrode formed over a substrate and a magnetic tunneling junction (MTJ) cell formed over the bottom electrode. The semiconductor memory structure also includes a top electrode formed over the MTJ cell; and a first sidewall spacer layer formed on a top surface of the MTJ cell and an outer sidewall surface of the top electrode.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: May 7, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Wei Lin, Yuan-Tai Tseng, Shih-Chang Liu
  • Patent number: 10255937
    Abstract: A contact sensor is provided at or near an air bearing surface of a slider and having a temperature coefficient of resistance. The contact sensor is coupled to a lead arrangement comprising a first lead and a second lead. The contact sensor comprises a sensor element, a first peripheral wing comprising an inner wing connected to the sensor element and an outer wing connected to the first lead, and a second peripheral wing comprising an inner wing connected to the sensor element and an outer wing connected to the second lead. An electrically conductive overlay covers at least the outer wings of the first and second peripheral wings and some or all of the first and second electrical leads.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: April 9, 2019
    Assignee: Seagate Technology LLC
    Inventors: Gary Joseph Kunkel, Jin Fang, Erik J. Hutchinson
  • Patent number: 10224066
    Abstract: A method includes depositing a plurality of layers over a substrate. The layers include read sensor layers and an electrically conductive layer substantially coplanar with the read sensor layers and substantially surrounding the read sensor layers. The electrically conductive layer is in contact with at least one of the read sensor layers. The electrically conductive layer provides an electrical path between the at least one of the read sensor layers and ground. The method further includes forming an isolation structure around the read sensor layers by removing a portion of the electrically conductive layer substantially surrounding the read sensor layers. The isolation structure is substantially coplanar with the read sensor layers and substantially surrounds the read sensor layers. The isolation structure breaks the electrical path between the at least one of the read sensor layers and the ground.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: March 5, 2019
    Assignee: Seagate Technology LLC
    Inventors: Andrew J. Hakanson, Robbee L. Grimm, Greg A. Schmitz
  • Patent number: 10186375
    Abstract: Provided is a method of manufacturing a coil unit in a thin film type for a compact actuator, and more particularly, a method of manufacturing a coil unit in a thin film type for a compact actuator in which a buffer layer is formed on a coil layer to prevent cracks in the coil layer and a substrate. According to the method of manufacturing the coil unit in a thin film type for a compact actuator of the present invention, the buffer layer is formed on the coil layer so that an impact to the coil layer during a back-grinding process for thinning a substrate is absorbed, thereby preventing the substrate and the coil layer from breaking due to the back-grinding process and compensating for a difference of deformation between the coil unit and the substrate according to a difference of coefficients of thermal expansion.
    Type: Grant
    Filed: December 23, 2016
    Date of Patent: January 22, 2019
    Assignee: EneBrain Co., Ltd.
    Inventor: Joung Sek Kwon
  • Patent number: 10170138
    Abstract: A magnetic recording tape writing apparatus includes an array of write transducers extending along a common tape bearing surface. Each of the write transducers has a lower pole having a lower pole tip, a lower coil layer above the lower pole, an intermediate coil layer above the lower coil layer, and an upper coil layer above the intermediate coil layer. An upper pole is positioned above the upper coil layer, the upper pole having an upper pole tip. In one embodiment, a nonmagnetic write gap is positioned between the pole tips, a plane of deposition of the write gap extending between the intermediate coil layer and the lower coil layer. In another embodiment, a nonmagnetic write gap is positioned between the pole tips, a plane of deposition of the write gap extending between the intermediate coil layer and the upper coil layer.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: January 1, 2019
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Robert E. Fontana, Jr., Calvin S. Lo
  • Patent number: 10099253
    Abstract: An ultrasonic transducer having a container, a base an actuator and a membrane system. The membrane system can include a membrane, a mesa and a standoff. The mesa can be shaped to achieve one or more target frequencies and other target vibrational properties, such as amplitudes. The actuator may be a flexure having one or more electroactive materials, such as piezoelectric and/or electrostrictive materials. The flexure may be fixed at one end to a wall of the container be in communication with the membrane system at or around its other end. The actuator may be in contact with the membrane system through the mesa and/or the standoff. The standoff may include an adhesive filled with beads to achieve a specific thickness.
    Type: Grant
    Filed: December 10, 2014
    Date of Patent: October 16, 2018
    Assignee: uBeam Inc.
    Inventors: Paul Reynolds, Marc Berte
  • Patent number: 10008662
    Abstract: A method of forming a magnetoresistive random access memory (MRAM) device including a perpendicular MTJ (magnetic tunnel junction) is provided. The method includes forming a magnetic tunneling junction (MTJ) over a bottom electrode layer. A top electrode layer is formed over an upper surface of the MTJ, and a hard mask is formed over an upper surface of the top electrode layer. A first etch is performed through the top electrode layer, through regions of the MTJ unmasked by the hard mask, to form a top electrode and an etched MTJ. Sidewall spacers are formed extending from an upper surface of the hard mask or the top electrode, along sidewalls of the top electrode and the etched MTJ, to a point below or about even with an upper surface of the bottom electrode. A resulting MRAM device structure is also provided.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: June 26, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Chun You, Kuo-Chi Tu, Chih-Yang Chang, Hsia-Wei Chen, Chin-Chieh Yang, Sheng-Hung Shih, Wen-Ting Chu, Yu-Wen Liao
  • Patent number: 9728714
    Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: August 8, 2017
    Assignees: International Business Machines Corporation, Crocus Technology
    Inventors: Anthony J. Annunziata, Erwan Gapihan
  • Patent number: 9523928
    Abstract: A method of forming an overcoat layer. The method comprises providing a substrate having an imaging structure formed thereon, the imaging structure comprising (i) a charge transport layer and a charge generating layer, or (ii) an imaging layer comprising both charge generating material and charge transport material. An overcoat composition is deposited on the imaging structure, the overcoat composition comprising a charge transport molecule, a fluorinated building block, a leveling agent, a liquid carrier and optionally a first catalyst. The fluorinated building block is a fluorinated alkyl monomer substituted at the ? and ? positions with a hydroxyl, carboxyl, carbonyl or aldehyde functional group or the anhydrides of any of those functional groups. The overcoat composition is cured to form an overcoat layer that is a fluorinated structured organic film, the curing comprising treating an outer surface of the overcoat composition with at least one cross-linking process.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: December 20, 2016
    Inventors: Gregory McGuire, Adrien P. Cote, Richard A. Klenkler, Yvan Gagnon
  • Patent number: 9502055
    Abstract: A data storage device may have one or more data writers that are configured with at least one write pole and shield. The write pole and shield can each be positioned on an air bearing surface. The shield may have first and second protrusions each extending from a shield body towards the write pole with the first protrusion positioned on the air bearing surface and the second protrusion separated from the air bearing surface and first protrusion by a lateral notch.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: November 22, 2016
    Assignee: Seagate Technology LLC
    Inventors: Arkajyoti Misra, JianHua Xue, Eric S. Linville
  • Patent number: 9472749
    Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: October 18, 2016
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGY
    Inventors: Anthony J. Annunziata, Erwan Gapihan
  • Patent number: 9412397
    Abstract: A magnetic write head has a plated coil with narrow pitch and is suitable for writing at high frequencies on magnetic media with high coercivity. The narrow pitch is obtained without such disadvantages as overplating that has adversely affected prior art attempts to produce such narrow pitches. The process that produces the magnetic write head is characterized by an RIE plasma etch using O2/N2 to etch plating trenches into a baked layer of photoresist with the ratio of gases being 5/45 sccm so that a dilute O2 concentration does not create unwanted side etching of the plating trenches. In addition, a Cu seed layer is coated with an insulating layer of Al2O3 which redeposits on the trench sidewalls to inhibit redeposition of any Cu from the seed layer and prevent outward growth of the plated Cu that would result in overplating.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: August 9, 2016
    Assignee: Headway Technologies, Inc.
    Inventors: Hironori Araki, Yoshitaka Sasaki, Hiroyuki Ito, Seiichiro Tomita, Kazuki Sato, Hideo Mamiya
  • Patent number: 9384769
    Abstract: A write head having a write pole with a tip portion defining a pole tip and a paddle portion extending from the tip portion away from the pole tip, the paddle portion defining a back edge. The write head also has a coil structure having at least two active turns crossing the paddle portion, wherein a back of the coil structure is no more than 1 micrometer past the back edge of the write pole. In some implementations, a length from the pole tip to the back edge is no more than 4.5 micrometers.
    Type: Grant
    Filed: September 28, 2015
    Date of Patent: July 5, 2016
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Jiaoming Qiu, Lei Lu, Xuelian Xu
  • Patent number: 9349394
    Abstract: A method provides a magnetic transducer having an air-bearing surface (ABS) location. The method provides a main pole using a plurality of masks including a plurality of apertures therein. The plurality of apertures overlap in an overlap region. At least a portion of the main pole resides in the overlap region. A side gap adjacent to a portion of the main pole is provided. The side gap has a conformal portion and a nonconformal portion. The conformal portion is adjacent to the ABS location and the overlap region. The conformal portion is between the ABS location and the nonconformal portion. A side shield is provided. The side gap residing between the side shield and the main pole.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: May 24, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Hai Sun, Ming Jiang, Ronghui Zhou
  • Patent number: 9214169
    Abstract: A method and system provide a magnetic transducer including a first shield, a read sensor, and a second shield. The read sensor is between the first shield and the second shield. The read sensor includes a pinned layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of ferromagnetic layers interleaved with and sandwiching a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are ferromagnetically aligned.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: December 15, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Christian Kaiser, Yuankai Zheng, Xin Jiang, Zhitao Diao, Qunwen Leng
  • Patent number: 9183857
    Abstract: A device including a magnetoresistive sensor; a top shield; and a bottom shield, wherein the magnetoresistive sensor is positioned between the top shield and the bottom shield, and wherein at least one of the bottom shield and the top shield include NiFeX, wherein X is chosen from Nb, Mo, Ta, or W.
    Type: Grant
    Filed: November 1, 2012
    Date of Patent: November 10, 2015
    Assignee: Seagate Technology LLC
    Inventors: Meng Zhu, Michael C. Kautzky
  • Patent number: 9153771
    Abstract: A magnetoresistive effect element includes a pair of first soft magnetic layers that are arranged opposite to each other so as to sandwich a magnetoresistive effect film; a second soft magnetic layer; and a coil that is windingly formed about the second soft magnetic layer. When a rear end region cross-sectional area of the first soft magnetic layers is defined as S1r and a tip end region cross-sectional area of the second soft magnetic layer is defined as S2f, S2f>S1r is established, and when a tip end width of the first soft magnetic layers is defined as W1f and a rear end width of the first soft magnetic layers is defined as W1r, W1r>W1f is established.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: October 6, 2015
    Assignee: TDK CORPORATION
    Inventors: Katsuyuki Nakada, Takahiro Suwa, Kuniyasu Ito, Masato Takahashi
  • Patent number: 9135930
    Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS) and an intermediate layer. A trench having a shape and location corresponding to a main pole is formed in the intermediate layer. The main pole is provided. At least a portion of the main pole is in the trench. Providing the main pole further includes vacuum depositing a first main pole material layer. The first main pole material layer is thin enough to preclude filling of the trench. The first main pole material layer is then ion beam etched. A second main pole layer is vacuum deposited on the first main pole layer. The second main pole material layer is also thin enough to preclude filling of the trench. An additional main pole layer is also deposited.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: September 15, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Li Zeng, Dehua Han, Ming Sun, Jose A. Medina, Jia Li, Liang Hong, Zhigang Bai, Yugang Wang
  • Patent number: 9015927
    Abstract: A method for fabricating a synthetic antiferromagnetic device, includes depositing a reference layer on a first tantalum layer and including depositing a first cobalt iron boron layer, depositing a second cobalt iron boron layer on the first cobalt iron boron layer, depositing a second Ta layer on the second cobalt iron boron layer, depositing a magnesium oxide spacer layer on the reference layer and depositing a cap layer on the magnesium oxide spacer layer.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: April 28, 2015
    Assignee: International Business Machines Corporation
    Inventors: David W. Abraham, Michael C. Gaidis
  • Patent number: 9003640
    Abstract: A method for fabricating a magnetic recording transducer is described. The method includes providing a pinned layer for a magnetic element. The portion of the magnetic transducer including the pinned layer is transferred to a high vacuum annealing apparatus before annealing the magnetic transducer. The portion of the magnetic recording transducer is annealed in the high vacuum annealing apparatus. A tunneling barrier is provided after the step of annealing the part of the magnetic recording transducer. A free layer for the magnetic element is also provided.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: April 14, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Chando Park, Qunwen Leng, Mahendra Pakala
  • Patent number: 8984741
    Abstract: A method for manufacturing a magnetic read sensor allows for the construction of a very narrow trackwidth sensor while avoiding problems related to mask liftoff and shadowing related process variations across a wafer. The process involves depositing a plurality of sensor layers and forming a first mask structure. The first mask structure has a relatively large opening that encompasses a sensor area and an area adjacent to the sensor area where a hard bias structure can be deposited. A second mask structure is formed over the first mask structure and includes a first portion that is configured to define a sensor dimension and a second portion that is over the first mask structure in the field area.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: March 24, 2015
    Assignee: HGST Netherlands B.V.
    Inventors: Yi Zheng, Guomin Mao, Hicham M. Sougrati, Xiaozhong Dang
  • Patent number: 8984740
    Abstract: A method for providing a magnetic recording transducer is provided. The method includes providing a substrate, and a magnetic shield having a top surface above the substrate. The top surface is treated by a first plasma treatment performed at a first power. An amorphous ferromagnetic (FM) layer is deposited on and in contact with the top surface to a thickness of at least 5 Angstroms and not more than 50 Angstroms. A second plasma treatment is performed at a second power. A magnetic seed layer is provided on and contact with the amorphous FM layer. The magnetic seed layer may comprise a bilayer. A nonmagnetic spacer layer is provided above the magnetic seed layer, an antiferromagnetic (AFM) layer provided above the spacer layer, and a read sensor provided above the AFM layer.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: March 24, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Yuankai Zheng, Qunwen Leng, Cheng-Han Yang, Zhitao Diao
  • Patent number: 8978240
    Abstract: A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer?1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: March 17, 2015
    Assignee: Headway Technologies, Inc.
    Inventors: Kunliang Zhang, Min Li, Moris Dovek, Yue Liu
  • Patent number: 8914970
    Abstract: A tunneling magnetoresistive sensor has an extended pinned layer wherein both the MgO spacer layer and the underlying ferromagnetic pinned layer extend beyond the back edge of the ferromagnetic free layer in the stripe height direction and optionally also beyond the side edges of the free layer in the trackwidth direction. A patterned photoresist layer with a back edge is formed on the sensor stack and a methanol (CH3OH)-based reactive ion etching (RIE) removes the unprotected free layer, defining the free layer back edge. The methanol-based RIE terminates at the MgO spacer layer without damaging the underlying reference layer. A second patterned photoresist layer may be deposited and a second methanol-based RIE may be performed if it is desired to have the reference layer also extend beyond the side edges of the free layer in the trackwidth direction.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: December 23, 2014
    Assignee: HGST Netherlands B.V.
    Inventor: Jordan Asher Katine
  • Patent number: 8914969
    Abstract: A method fabricates a magnetic transducer. A sacrificial leading shield is provided on an etch stop layer. A nonmagnetic layer is provided on the sacrificial leading shield. A pole trench is formed in the nonmagnetic layer and on the sacrificial leading shield. A pole is formed. The pole has a bottom and a top wider than the bottom in a pole tip region. Part of the pole in the pole tip region is in the pole trench and at the ABS location. The sacrificial leading shield and part of the nonmagnetic layer adjacent to the pole are removed. An air bridge thus resides in place of the sacrificial leading shield between the portion of the pole and the etch stop layer. As least one shield layer is provided. The at least one shield layer substantially fills the air bridge and form a monolithic shield including a leading and side shields.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: December 23, 2014
    Assignee: Western Digital (Fremont), LLC
    Inventors: Xiaotian Zhou, Hongzhou Jiang, Donghong Li, Lien-Chang Wang, Ching-Huang Lu, Wencheng Su, Lieping Zhong, Tao Pan
  • Patent number: 8904628
    Abstract: Disclosed herein is a method of manufacturing a noise removing filter, including preparing at least one conductive pattern, an insulating layer for covering the at least one conductive pattern, and a lower magnetic body including input/output stud terminals for electrically inputting and outputting electricity to and from the at least one conductive pattern; disposing a recognizable portion on upper surfaces of the input/output stud terminals; disposing an upper magnetic body on the recognizable portion and the insulating layer; polishing the upper magnetic body; and removing the recognizable portion such that a level of an upper surface of the upper magnetic body is higher than levels of the upper surfaces of the input/output stud terminals.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: December 9, 2014
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sang Moon Lee, Sung Kwon Wi, Jeong Bok Kwak, Won Chul Sim, Young Seuck Yoo, Yong Suk Kim
  • Patent number: 8893376
    Abstract: A method of forming a magnetic recording head is provided. The method comprises the steps of forming a damascene trench comprising a lower region having a substantially trapezoidal cross-section and an upper region having a substantially rectangular cross-section, and providing a magnetic material within the damascene trench.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: November 25, 2014
    Assignee: Western Digital(Fremont), LLC
    Inventors: Changqing Shi, Ming Jiang
  • Patent number: 8881376
    Abstract: A method of manufacturing a PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing by including an AFM-FM phase change material spacer that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be formed as a laminated structure by a sputter deposition process wherein a plurality of “n” ferromagnetic layers and “n?1” AFM-FM phase change material layers are laid down in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %, and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: November 11, 2014
    Assignee: Headway Technologies, Inc.
    Inventors: Yuchen Zhou, Kenichi Takano, Kowang Liu, Kunliang Zhang, Liejie Guan, Moris Dovek, Joe Smyth
  • Patent number: 8881378
    Abstract: A method is described to improve performance of a magneto-resistive (MR) sensor under conditions of high areal density. The free layer is partially etched away, the removed material being replaced by a magnetic flux guide structure that reduces the free layer's demagnetization field. This in turn reduces the stripe height of the sensor so that the resolution and the read-back signal are enhanced without increasing noise and instability.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: November 11, 2014
    Assignee: Headway Technologies, Inc.
    Inventors: Yuchen Zhou, Joe Smyth, Min Li, Glen Garfunkel
  • Patent number: 8844120
    Abstract: A method for providing a magnetic transducer including an underlayer is provided. The method comprises providing a recessed region in the underlayer. The recessed region includes a front having an angle from horizontal. The angle is greater than zero and less than ninety degrees. The method further comprises providing an assist pole layer in the recessed region, providing a main pole layer, a portion of the main pole layer residing on the assist pole layer, and defining a main pole from the assist pole layer and the main pole layer.
    Type: Grant
    Filed: October 26, 2012
    Date of Patent: September 30, 2014
    Assignee: Western Digital (Fremont), LLC
    Inventors: Yong Shen, Zhigang Bai
  • Patent number: 8760807
    Abstract: A method fabricates a magnetic transducer having a nonmagnetic layer and an ABS location corresponding to an ABS. Etch stop and nonmagnetic etchable layers are provided. A side shield layer is provided between the ABS location and the etch stop and etchable layers. A pole trench is formed in the side shield and etchable layers. The pole trench has a pole tip region in the side shield layer and a yoke region in the etchable layer. A nonmagnetic side gap layer, at least part of which is in the pole trench, is provided. A remaining portion of the pole trench has a location and profile for a pole and in which at least part of the pole is formed. A write gap and trailing shield are provided. At least part of the write gap is on the pole. At least part of the trailing shield is on the write gap.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: June 24, 2014
    Assignee: Western Digital (Fremont), LLC
    Inventors: Jinqiu Zhang, Ying Hong, Feng Liu, Zhigang Bai
  • Patent number: 8756795
    Abstract: A method for manufacturing a read head includes the step of depositing a conductive filler into a plurality of holes that extend through a wafer. Each of the holes extends from a wafer top surface to a wafer bottom surface. Each of the holes includes an inner surface that includes an insulative layer. The method further includes the steps of fabricating a read transducer on the wafer top surface, and depositing a plurality of electrically conductive leading connection pads on the wafer bottom surface. The plurality of electrically conductive leading connection pads are in electrical contact with the conductive filler.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: June 24, 2014
    Assignee: Western Digital (Fremont), LLC
    Inventors: Mark D. Moravec, Subrata I Gusti Made, Santi Pumkrachang
  • Patent number: 8734620
    Abstract: A method for producing a hard bias (HB) structure that stabilizes a free layer in an adjacent spin valve is disclosed. The HB structure includes a composite seed layer and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x laminate. (Co/Ni)x deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent processing. After initialization, HB magnetization direction is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: May 27, 2014
    Assignee: Headway Technologies, Inc.
    Inventors: Zhang Kunliang, Li Min, Zhou Yuchen, Zheng Min
  • Patent number: 8726491
    Abstract: A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: May 20, 2014
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Ru-Ying Tong
  • Patent number: 8720044
    Abstract: A method for manufacturing a magnetic transducer is described. The method includes providing a negative mask having a bottom, a plurality of sides, and a top wider than the bottom. The method also includes depositing a nonmagnetic layer on the negative mask. The nonmagnetic layer has a plurality of portions covering the plurality of sides of the negative mask. The method also includes providing a first mask having a first trench therein. The negative mask resides in the first trench. The method further includes depositing side shield material(s), at least a portion of which resides in the first trench. The method further includes removing the negative mask to create a second trench between the plurality of portions of the nonmagnetic layer and form a pole, at least a portion of which resides in the second trench.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: May 13, 2014
    Assignee: Western Digital (Fremont), LLC
    Inventors: Ut Tran, Zhigang Bai, Kevin K. Lin, Li He
  • Patent number: 8701273
    Abstract: A method of manufacturing a magnetic head includes the step of forming an accommodation part and the step of forming a return path section. The return path section lies between a main pole and a top surface of a substrate, and connects a shield and part of the main pole away from a medium facing surface to each other so that a space through which part of a coil passes is defined. The accommodation part accommodates at least part of the return path section. The step of forming the return path section forms first to third portions simultaneously. The first portion is located closer to the top surface of the substrate than is the space. The second portion is located closer to the medium facing surface than is the space. The third portion is located farther from the medium facing surface than is the space.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: April 22, 2014
    Assignees: Headway Technologies, Inc., SAE Magnetics (H.K.) Ltd.
    Inventors: Yoshitaka Sasaki, Hiroyuki Ito, Hironori Araki, Seiichiro Tomita, Kazuki Sato, Shigeki Tanemura, Tatsuya Shimizu
  • Patent number: 8701274
    Abstract: A manner for stabilizing the shield domain structure is described that employs the magnetic field of a hard bias layer. More particularly, it has been found that the shield domain structure is stabilized when the height of the hard bias layer in the depth direction is made substantially half the height of upper shield layer. In another embodiment of the invention, a stabilizing structure is provided at approximately the midpoint of the shield in order to fix the closure domain of the shield to the desired two-domain structure. In an embodiment of the invention, the stabilizing structure is made convex or concave as viewed from the air-bearing surface.
    Type: Grant
    Filed: December 30, 2011
    Date of Patent: April 22, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Koji Kataoka, Takashi Wagatsuma
  • Patent number: 8689430
    Abstract: A method and system for providing a perpendicular magnetic recording (PMR) head are disclosed. A PMR pole having a bottom and a top wider than the bottom is provided. The PMR pole may be formed by depositing a PMR pole layer, then removing part of the PMR pole layer, leaving the PMR pole. The PMR pole may also be provided by forming a trench having the desired profile in a photoresist layer, depositing the PMR pole layer, then removing the photoresist layer, leaving the PMR pole in the location of the trench. A side gap is deposited over the PMR pole. A side shield is provided on the side gap. A planarization that removes part of the side shield on the PMR pole is performed. A top gap is provided on the PMR pole, substantially covering the entire PMR pole. A top shield is provided on the top gap.
    Type: Grant
    Filed: November 29, 2006
    Date of Patent: April 8, 2014
    Assignee: Western Digital (Fremont), LLC
    Inventors: Yingjian Chen, Kyusik Sin
  • Patent number: 8671554
    Abstract: An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer.
    Type: Grant
    Filed: March 13, 2012
    Date of Patent: March 18, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideaki Fukuzawa, Hiromi Yuasa, Yoshihiko Fuji
  • Patent number: 8646168
    Abstract: A method for manufacturing a magnetic write pole of a magnetic write head for perpendicular magnetic recording. A magnetic write pole material is deposited, followed by union milling hard mask, a polymer mask under-layer followed by a dielectric hard mask material, followed by a photoresist. The photoresist is patterned to define a write pole shape and the shape of the patterned photoresist is transferred onto the underlying dielectric hard mask by a novel reactive ion etching that is performed in a chemistry that includes one or more fluorine containing gases and He. The presence of He in the reactive ion etching tool helps to improve the profile of the patterned dielectric hard mask. In addition, RIE parameters such a gas ratio (e.g. CF4 to CHF3 gas ratio) and power ratio (e.g. source power to bias power) are adjusted to optimize the profile of the patterned dielectric mask.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: February 11, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Guomin Mao, Sue Siyang Zhang, Yi Zheng
  • Patent number: 8615868
    Abstract: A method for manufacturing a magnetic sensor that includes depositing a plurality of mask layers, then forming a stripe height defining mask over the sensor layers. A first ion milling is performed just sufficiently to remove portions of the free layer that are not protected by the stripe height defining mask, the first ion milling being terminated at the non-magnetic barrier or spacer layer. A dielectric layer is then deposited, preferably by ion beam deposition. A second ion milling is then performed to remove portions of the pinned layer structure that are not protected by the mask, the free layer being protected during the second ion milling by the dielectric layer.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: December 31, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Yongchul Ahn, Xiaozhong Dang, Quang Le, Simon H. Liao
  • Patent number: 8617408
    Abstract: A method for manufacturing a magnetic read sensor at very narrow track widths. The method uses an amorphous carbon mask layer to pattern the sensor by ion milling, rather than a mask constructed of a material such as photoresist or DURIMIDE® which can bend over during ion milling at very narrow track widths. By using the amorphous carbon layer as the masking layer, the trackwidth can be very small, while avoiding this bending over of the mask that has been experienced with prior art methods. In addition, the track-width can be further reduced by using a reactive ion etching to further reduce the width of the amorphous carbon mask prior to patterning the sensor. The method also allows extraneous portions of the side insulation layer and hard bias layer to be removed above the sensor by a light CMP process.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: December 31, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Hamid Balamane, Patrick M. Braganca, Jordan A. Katine, Jui-Lung Li, Yang Li, Kanaiyalal C. Patel, Neil L. Robertson, Samuel W. Yuan
  • Patent number: 8607439
    Abstract: A method and system for providing an energy assisted magnetic recording (EAMR) head are described. The method and system include providing a slider, an EAMR transducer coupled with the slider, and a top layer on the slider. The top layer includes a mirror well therein and has a substantially flat top surface. The method and system further includes providing a laser including a light-emitting surface and providing a mirror optically coupled with the laser. The laser is coupled to the top surface of the top layer external to the mirror well. The mirror has a bottom surface and a reflective surface facing the light-emitting surface of the laser. A portion of the bottom surface of the mirror is affixed to the top surface of the top layer. A portion of the mirror resides in the mirror well.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: December 17, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Lei Wang, Dujiang Wan
  • Patent number: 8607438
    Abstract: A read sensor for a transducer is fabricated. The transducer has a field region and a sensor region corresponding to the sensor. A sensor stack is deposited. A hybrid mask including hard and field masks is provided. The hard mask includes a sensor portion covering the sensor region and a field portion covering the field region. The field mask covers the field portion of the hard mask. The field mask exposes the sensor portion of the hard mask and part of the sensor stack between the sensor and field regions. The sensor is defined from the sensor stack in a track width direction. Hard bias layer(s) are deposited. Part of the hard bias layer(s) resides on the field mask. Part of the hard bias layer(s) adjoining the sensor region is sealed. The field mask is lifted off. The transducer is planarized.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: December 17, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Wei Gao, Guanxiong Li, Ming Mao, Chih-Ching Hu, Guanghong Luo, Miao Wang, Zhihong Zhang, Anup G. Roy
  • Patent number: 8578594
    Abstract: A process for fabricating a magnetic recording transducer for use in a data storage system comprises providing a substrate, an underlayer and a first nonmagnetic intermediate layer deposited to a first thickness on and in contact with the underlayer, performing a first scanning polishing on a first section of the first intermediate layer to planarize the first section of the first intermediate layer to a second thickness, providing a main pole in the planarized first section of the first intermediate layer, providing a first pattern of photoresist on and in contact with the first section of the first intermediate layer, the pattern comprising an aperture to define a side shield trench, performing a wet etch to remove at least a portion of the first intermediate layer thereby exposing at least one of the plurality of main pole sides, and depositing side shield material in the side shield trench.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: November 12, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Ming Jiang, Ronghui Zhou, Guanghong Luo, Masahiro Osugi, Danning Yang
  • Patent number: 8567045
    Abstract: As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: October 29, 2013
    Assignee: Headway Technologies, Inc.
    Inventors: Moris Dovek, Glen Garfunkel, Po Kang Wang