Abstract: A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to difference between the first and the second thermal expansion coefficients is 10 m or more at room temperature. The piezoelectric thin film has a thickness of 0.2 ?m to 10 ?m. The piezoelectric thin film is oriented in one of plane orientations (001), (110), and (111).

Abstract: The piezoelectric/electrostrictive properties and mechanical durability of a piezoelectric/electrostrictive ceramic can be improved. A piezoelectric/electrostrictive device has a laminated structure in which an electrode film, a piezoelectric/electrostrictive film, an electrode film, an piezoelectric/electrostrictive film, and an electrode film are laminated in the order mentioned on a thin portion of a substrate. The piezoelectric/electrostrictive films are ceramic films with a matrix of perovskite oxide that contains lead (Pb) as an A-site component and nickel (Ni), aluminum (Al), niobium (Nb), zirconium (Zr), and titanium (Ti) as B-site components. The piezoelectric/electrostrictive films are formed by firing as a unit the substrate that contains aluminum oxide and an intermediate coating film of perovskite oxide that contains components other than aluminum so that aluminum oxide is diffused from the substrate to the intermediate coating film.

Abstract: A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and an upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and in which dependency of the piezoelectric constant d31 of the piezoelectric thin film on applied electric field [=|(d31 under 70 kV/cm)?(d31 under 7 kV/cm)|/|d31 under 70 kV/cm|] is 0.20 or less.

Abstract: A piezoelectric/electrostrictive material having a nonstoichiometric composition represented by a general formula (1): (1?x)(BiaNabTiO3+?)?x(KcNbO3+?)??(1) wherein 0.01?x<0.08, a<0.5, 1.01?(a/b)?1.08, 0.92?(a+b)/c<0.99, and 0.9?c?1.1, and ??0 when ?=0 and ??0 when ?=0.

Abstract: A piezoelectric/electrostrictive membrane sensor is provided, wherein a piezoelectric/electrostrictive body contains an alkali metal or an alkaline earth metal, and a sulfide and the main component of terminal electrodes are contained near the surface of the piezoelectric/electrostrictive body. A voltage equal to or higher than a withstand voltage is hardly applied to the piezoelectric/electrostrictive body, and consequently, the sensor is prevented from dielectric breakdown. In addition, the sensor is hardly electrostatically charged, and thus prevented from electrostatic discharge damage and attraction of dust, dirt or the like.

Abstract: A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to difference between the first and the second thermal expansion coefficients is 10 m or more at room temperature.

Abstract: An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.

Abstract: A process for producing a perovskite oxide having a composition expressed by the compositional formulas A(B, C)O3, and determined so as to satisfy the conditions (1), (2), and (3), 0.98<TF(PX)<1.01, (1) TF(ABO3)>1.0, and (2) TF(ACO3)<1.0, (3) where each of A, B, and C represents one or more metal elements, the main component of one or more A-site elements is bismuth, the composition of one or more B-site element represented by B is different from the composition of one or more B-site element represented by C, TF(PX) is the tolerance factor of the oxide expressed by the compositional formula A(B, C)O3, and TF(ABO3) and TF(ACO3) are respectively the tolerance factors of the oxides expressed by the compositional formulas ABO3 and ACO3.

Abstract: A piezoelectric substance has a substrate, an electrode formed on the substrate, and a piezoelectric film formed on the electrode. The piezoelectric film is formed of crystals having a main phase of (NaxKyLiz)NbO3 (0<x<1, 0<y<1, 0?z?0.1, x+y+z=1). The piezoelectric film is a polycrystalline thin film preferentially oriented to either or both of <001> and <110> crystalline axes in the direction normal to the substrate surface, and the axes of its crystals oriented to each crystalline axis are also formed in the same direction in the in-plane direction of the substrate.

Abstract: An electroacoustic component operates with guided acoustic waves and includes a first substrate, a second substrate, a metallic layer and an intermediate layer. The first substrate (S1) is made from a monocrystalline LiTaO3. The metallic layer is arranged between the first substrate and the intermediate layer. The intermediate layer is arranged between the metallic layer and the second substrate. The crystal section of monocrystalline LiTaO3 is chosen such that for the second Euler angle ?: ?100°????40° or ?160°????130°. For the first Euler angle ?, preferably ?=0° and for the third Euler angle ?, ?10°???10°.

Abstract: Provided is a lead-containing perovskite-type oxide film having principally (100) and/or (001) orientation and containing lead as a chief component, which is over 2 ?m thick and exhibits such hysteresis characteristics that two coercive fields are both positive. A method of producing such an oxide film, a piezoelectric device including such an oxide film, and a liquid ejecting apparatus provided with such a piezoelectric device are also provided.

Abstract: In order to provide a multi-layer electronic component in which the occurrence of delamination between the ceramic layer and the internal electrode is restricted and a method for manufacturing the same, the multi-layer electronic component of the present invention comprises a stack formed by stacking piezoelectric layers and internal electrodes one on another alternately and a pair of external electrodes formed on two opposing side faces of the stack, wherein the internal electrode consists of a first internal electrode connected to the external electrode formed on one of the two side faces and a second internal electrode located between the first internal electrode and connected to the external electrode formed on the other one of the two side faces, and wherein the internal electrodes and the piezoelectric layers are faced in proximity so that a space between them is 2 ?m or less over an area occupying 50% or more of the active region where the first internal electrode and the second internal electrode oppo

Abstract: To provide a multi-layer piezoelectric device having excellent durability in which the amount of displacement does not change even when the piezoelectric actuator is subjected to continuous operation over a long period of time under a high voltage and a high pressure, the multi-layer piezoelectric device comprises a stack formed by stacking piezoelectric layers and internal electrodes alternately one on another and external electrodes formed on a first side face and on a second side face of the stack, wherein one of the adjacent internal electrodes is connected to the external electrode formed on the first side face and the other internal electrode is connected to the external electrode formed on the second side face, while content of alkali metal in a range from 5 ppm to 300 ppm is contained.

Abstract: Embodiments of the invention provide an energy harvesting mechanism comprising a central conductive element and a plurality of transductive elements. Each transductive element is positioned to be in contact with a corresponding peripheral length segment of the central conductive element. Also each transductive element is deformable in a characteristic radial direction to convert its deformation into a corresponding electrical signal. The plurality of transductive elements are arranged so that any one of the plurality of transductive elements is capable of being deformed in the characteristic radial direction to trigger the corresponding electrical signal. Embodiments of the mechanism can be used for harvesting energy from a variety of bio-kinetic events such as a heartbeat, respiration, muscle contraction or other movement. Such embodiments can be used for powering a variety of implanted medical devices such as pacemakers, defibrillators and various monitoring devices.

Abstract: A multilayer piezoelectric device including a body having internal electrode layers and piezoelectric ceramic layers alternately stacked. The internal electrode layers contain Cu as a major component, the piezoelectric ceramic layers contain a compound oxide represented by Pb(Ti, Zr)O3 as a major component, and a metal oxide (Nb2O5, Sb2O5, Ta2O5, or WO3) containing Nb, Sb, Ta, or W, which is at least one of a pentavalent metal element and a hexavalent metal element, is incorporated in the piezoelectric ceramic layers such that the concentration of the metal oxide decreases with distance from the internal electrode layers. Thereby, even in a case where internal electrodes contain Cu as a major component, it is possible to provide a multilayer piezoelectric device which can be obtained by low-temperature firing while ensuring a sufficient piezoelectric constant.

Abstract: A laminated piezoelectric device obtained by alternately laminating the piezoelectric layers containing Pb and the conducting layers containing palladium as a conducting component, wherein the piezoelectric layer formed between the two conducting layers has layer regions where Pb and Pd are mixed together in the interfacial portions thereof relative to the conducting layers, the layer regions having a thickness of not larger than 3% of the thickness of the piezoelectric layer. The laminated piezoelectric device is formed by co-firing the Pb-containing piezoelectric layers and the palladium (Pd)-containing layers, the piezoelectric layers therein having a large insulation resistance and good piezoelectric characteristics.

Abstract: An alkali niobate-based piezoelectric/electrostrictive ceramics sintered body including, as a main crystal phase, a perovskite type oxide containing at least one type of element selected from the group consisting of Li, Na and K as A site constituent elements and at least one type of element selected from the group consisting of Nb and Ta as B site constituent elements. The number of lattice-strained layers of the piezoelectric/electrostrictive ceramics sintered body is preferably small. A diffuse scattering intensity ratio, which is a ratio of an intensity of diffuse scattering by a lattice-strained layer present near a domain wall to a sum of an X-ray diffraction intensity of a first lattice plane and that of a second lattice plane different in interplanar spacing from the first lattice plane due to crystallographic symmetry reduction is preferably 0.5 or lower.

Abstract: A process for producing a piezoelectric device constituted by a first electrode, at least one second electrode, and a piezoelectric film sandwiched between the first electrode and the at least one second electrode so that an electric field can be applied to the piezoelectric film. First, a seed layer of a material containing at least one element is formed on a substrate, and then the first electrode is formed on the seed layer. Next, the at least one element is diffused through the first electrode so that the at least one element precipitates on a surface of the first electrode on the opposite side to the seed layer, and then the piezoelectric film is formed on the first electrode.

Abstract: A multi-layer electronic component that can be repetitively operated under high voltage, high temperature and high humidity is provided. The multi-layer electronic component comprises a plurality of dielectric material layers made of a sintered material having perovskite structure that includes Pb; and a plurality of internal electrodes, the dielectric material layers and the internal electrodes being stacked alternately one on another, wherein lead compound that remains in the crystal grain boundaries of the dielectric material layers is controlled so that the number of grains of the lead compound not smaller than 0.01 ?m are 2 or less per 100 ?m2 on average.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta and W, or a combination of the atoms of the plurality of elements.

Abstract: Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SixGeyTiz)O3 (here, 0?x?1, 0?y?1, and 0?z?0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuO3 or Ni.

Abstract: In order to provide a multi-layer electronic component in which the occurrence of delamination between the ceramic layer and the internal electrode is restricted and a method for manufacturing the same, the multi-layer electronic component of the present invention comprises a stack formed by stacking piezoelectric layers and internal electrodes one on another alternately and a pair of external electrodes formed on two opposing side faces of the stack, wherein the internal electrode consists of a first internal electrode connected to the external electrode formed on one of the two side faces and a second internal electrode located between the first internal electrode and connected to the external electrode formed on the other one of the two side faces, and wherein the internal electrodes and the piezoelectric layers are faced in proximity so that a space between them is 2 ?m or less over an area occupying 50% or more of the active region where the first internal electrode and the second internal electrode oppo

Abstract: A piezoelectric thin film elemental device has a lower electrode, a piezoelectric thin film, and an upper electrode. The piezoelectric thin film has a thin film of a perovskite structure, expressed by a compositional formula (K1?xNax)NbO3 (0<x<1), and a c/a ratio of an out-of-plane directional lattice constant c to an in-plane directional lattice constant a of the (K1?xNax)NbO3 thin film is set within a range of 0.0980?c/a?1.0100.

Abstract: The present invention provides a piezoelectric composite sensor comprising a piezoelectric material layer formed of a piezoelectric composite obtained by mixing piezoelectric material powder with a polymer, and electrodes formed of a conductive composite or conductive polymer obtained by mixing conductive filling particles with a polymer matrix and formed on both surfaces of the piezoelectric material layer. The piezoelectric composite sensor of the present invention has advantages of superior piezoelectric and dielectric properties, high mechanical strength, improved reliability and process flexibility, a simplified process and reduced process costs, and improved productivity.

Abstract: A multilayered piezoelectric element and a method of producing the multilayered piezoelectric element are disclosed. The multilayered piezoelectric element is made of piezoelectric ceramic layers and electrode formation layers which are alternately laminated. The piezoelectric ceramic layers are made of crystal oriented ceramic as polycrystalline material. The crystal oriented ceramic is made mainly of an isotropic perovskite type compound in which the specific {100} crystal plane of each of crystal grains that form the polycrystalline material is oriented. The electrode formation layers have electrode parts forming inner electrodes containing a conductive metal. The isotropic perovskite type compound is expressed by a general formula (1): [Agh{Lix(K1-yNay)1-x}1-h]j(Nb1-z-wTazSbw)O3-k . . . (1), where 0?x?0.2, 0?y?1, 0?z?0.4, 0?w?0.2, x+z+w>0, 0<h?0.05, 0.94?j?1, and 0?k?0.5).

Abstract: Piezoelectric devices with excellent high temperature operation capabilities are described, including piezoelectric sensors and actuators that use a rare earth calcium oxyborate or langanite as the piezoelectric material.

Abstract: The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of <100> orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO3 and contains at least domains C, D and E of [100] orientation having mutual deviation in crystal direction, where the angular deviation between [100] directions in domains C and D, in domains D and E, in domains C and E and in domains D and E are respectively 5° or less, 5° or less, 0.3° or less, and 0.3° or more, and the angular deviation between [001] directions in domains C and E and in domains D and E are respectively 1.0° or more, and 1.0° or more.

Abstract: A piezoelectric device includes: a substrate; a first conductive layer formed over the substrate, the first conductive layer including at least one buffer layer formed of a (001) preferentially oriented lanthanum-based layered perovskite compound; a piezoelectric layer formed over the first conductive layer and including a piezoelectric having a perovskite structure; and a second conductive layer electrically connected with the piezoelectric layer.

Abstract: An electroacoustic transducer having a tail mass, a head mass and at least two parallelepiped shaped piezoelectric material elements disposed between and attached to the tail mass and the head mass is provided. The tail mass has a body extending between a first end and a second end, the body having a cavity with a cavity wall and the cavity extending from the first end towards the second end. The head mass has a head and an elongated shaft attached to and extending from the head, the shaft having a shaft axis and being located at least partially within the cavity of the tail mass. The at least two parallelepiped shaped piezoelectric material elements are made from a piezoelectric material having a non-zero d3y shear piezoelectric coefficient where the d3y coefficient can be d34, d35 or d36.

Abstract: A piezoelectric device is formed by simultaneously firing a piezoelectric ceramic mainly composed of a perovskite complex oxide represented by general formula ABO3 and electrodes mainly composed of copper. The piezoelectric ceramic is represented by Pb??aMea[(MII1/3MV(2+b)/3)zTixZr1?x?z]O3 (wherein Me represe element, MII is an acceptor element which is a divalent metal element, and MV is a donor element which is a pentavalent metal element), and satisfies equations 0.05?z?0.40, 0<bz/3?0.035, 0.345?x?0.480, 0.965???1.020, and 0?a?0.05. In other words, the B sites contain excessive donors, and thus a piezoelectric device having good piezoelectric characteristics can be obtained even in the cases where a base metal material mainly composed of inexpensive copper is used as the internal electrode material.

Abstract: An electromechanical device includes a support structure formed by attaching inner surfaces of second and third substrates to a first substrate. The support structure includes at least one cavity between the second and third layers. An electromechanical active element is provided on an outer surface of at least one of the second or third layers.

Abstract: A piezoelectric/electrostrictive device which exhibits an excellent piezoelectric characteristic and which has only a small dependence on a temperature is provided. The piezoelectric/electrostrictive device includes a piezoelectric/electrostrictive portion made of a piezoelectric ceramic, and electrodes electrically connected to the piezoelectric/electrostrictive portion. The piezoelectric ceramic reversibly transits to a tetragonal phase and an orthorhombic phase at a phase transition point as a boundary. The piezoelectric/electrostrictive portion is formed by a polarization treatment performed under the conditions that a treatment temperature ranges from a first temperature which exceeds the phase transition point of the piezoelectric ceramic to a second temperature which is 50° C. higher than the first temperature.

Abstract: A piezoelectric ceramic 1 in a piezoelectric element 20 contains, as a major component, a composition containing one or more complex oxides with metal elements other than lead as constituent elements. At least one of the complex oxides includes an alkali metal and Nb as constituent elements. Also, either or both of the elements Mn and Cu are segregated at the grain boundaries of the composition.

Abstract: A piezoelectric ceramic composition includes a main component represented by general formula {(Pb1-x-yCaxSry) {Ti1-z(Ni1/3Nb2/3)z}O3}, wherein 0?x?0.2 (preferably 0?x?0.15), 0?y?0.2 (preferably 0?y?0.1), 0.05?x+y?0.2, and 0.02?z?0.1. Furthermore, a Mn component is preferably present in an amount of 1.0 part by weight or less (excluding zero) (more preferably 0.05 to 1.0 part by weight) in terms of MnCO3 with respect to 100 parts by weight of the main component. A piezoelectric element includes a piezoelectric ceramic body composed of this piezoelectric ceramic composition. Firing can be performed at a low temperature of about 1,100° C. The piezoelectric element has a high Curie point Tc, can withstand solder reflow treatment, and achieves satisfactory piezoelectric properties.

Abstract: A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1?x)% of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1?x)Tc(A)+xTc(B)?300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.

Abstract: A piezoelectric thin film element includes a substrate, a lower electrode, a piezoelectric thin film, and an upper electrode. The lower electrode, the piezoelectric thin film and the upper electrode are formed on the substrate. The piezoelectric thin film includes a polycrystal thin film including crystal grains, an alkali niobium oxide based perovskite structure represented by a general formula: (K1-xNax)NbO3 (0.4<x<0.7), a film thickness of not less than 1 ?m and not more than 10 ?m, a columnar structure configured by the crystal grains, a majority of the crystal grains including a shape in a cross-section direction thereof longer than in a plane direction of the substrate, and an average crystal grain size of not less than 0.1 ?m and not more than 1.0 ?m in the plane direction of the substrate.

Abstract: A monolithic piezoelectric element includes an element assembly in which internal electrode layers and piezoelectric ceramic layers are laminated alternately. The internal electrode layers contain an Ag—Pd alloy, which has an Ag content of 85 percent by weight or more as a primary component, a metal element having a valence of at least one of pentavalence or hexavalence. The piezoelectric ceramic layers contain a composite oxide represented by Pb(Ti,Zr)O3 as a primary component, a part of Ag contained in the internal electrode layers is almost uniformly diffused therein and, the metal element is diffused in the form of a metal oxide in such a way that the concentration is reduced with decreasing proximity to the internal electrode layers. In this manner, a monolithic piezoelectric element having a desired large piezoelectric constant can be obtained without inviting an increase in cost even when a firing treatment is conducted at low temperatures.

Abstract: The piezoelectric element 20 of the invention comprises a pair of electrodes 2,3 and a piezoelectric ceramic 1 comprising as the major component a solid solution of the two components KNbO3 and BaTiO3. In the solid solution, the molar ratio of KNbO3 is 0.5-0.9 with respect to the total of the two components.

Abstract: A piezoelectric member of single crystal or uniaxial crystal and the piezoelectric member has a perovskite type oxide of a general formula ABO3 with a main component of the A being Pb and a main component of the B containing at least three kinds of elements selected from the group consisting of Mg, Zn, Sc, In, Yb, Ni, Nb, Ti, and Ta, and a film thickness of the piezoelectric member is not less than 1 ?m and not more than 10 ?m and the piezoelectric member fulfills a predetermined conditions on a relative dielectric constant or a Curie temperature.

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Abstract: An actuator device includes: a layer provided on a single crystal silicon (Si) substrate, and made of silicon dioxide (SiO2); at least one buffer layer provided on the layer made of silicon dioxide (SiO2); a base layer provided on the buffer layer, and made of lanthanum nickel oxide (LNO) having the (100m) plane orientation; and a piezoelectric element. The piezoelectric element includes: a lower electrode provided on the base layer, and made of platinum (Pt) having the (100) plane orientation; a piezoelectric layer made of a ferroelectric layer whose plane orientation is the (100) orientation, the piezoelectric layer formed on the lower electrode by epitaxial growth where a crystal system of at least one kind selected from a group consisting of a tetragonal system, a monoclinic system and a rhombohedral system dominates the other crystal systems; and an upper electrode provided on the piezoelectric layer.

Abstract: A piezoceramic material according to an embodiment of the present invention has a composition represented by Pbm{Zr1-x-y-zTixSny(Sb1-nNbn)z}O3 where 1.000?m?1.075, 0.470?x<0.490, 0.020?y?0.040, 0<n<1.000 and 0<z?0.025 and a crystallite size of 30 to 39 nm.

Abstract: A piezoelectric material is expressed by a general formula (1) as follows: (Bi1?xBax)(Fe1?xTix)O3 . . . (1), where x is greater than 0, but smaller than 1 (0<x<1).

Abstract: Composite materials comprising ferroelastic ceramic particulates dispersed in a metal matrix are capable of vibration damping. When the ferroelastic ceramic particulates are subjected to stress, such as the cyclic stress experienced during vibration of the material, internal stresses in the ceramic cause the material to deform via twinning, domain rotation or domain motion thereby dissipating the vibrational energy. The ferroelastic ceramic particulates may also act as reinforcements to improve the mechanical properties of the composites. The composite materials may be used in various structural components in vehicles, aircraft, spacecraft, buildings and tools.

Abstract: There is a need for a piezoelectric element capable of improving a productivity and a yield without impairing the piezoelectric characteristic and a method for manufacturing the same. A piezoelectric element is provided with a substrate, a first electrode film disposed on the substrate, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. The piezoelectric film has a laminated structure composed of a plurality of crystallized piezoelectric thin films. The piezoelectric film having a predetermined thickness is formed by repeated cycles of a film formation step of forming a piezoelectric thin film and a crystallization heat treatment step of heat-treating the piezoelectric thin film to effect crystallization. In this manner, a piezoelectric film exhibiting uniform crystallinity in the film thickness direction may be produced.

Abstract: An array of piezoelectric elements is easily manufactured by making insulating portions at side surfaces smaller. The piezoelectric element includes: a multilayered structure in which piezoelectric material layers and internal electrode layers are alternately stacked; first insulating films formed by using an AD method, for covering a first group of internal electrode layers at a first surface of the multilayered structure; second insulating films formed by using the AD method, for covering a second group of internal electrode layers at a second surface of the multilayered structure; a first external electrode connected to the second group of internal electrode layers and insulated from the first group of internal electrode layers at the first surface; and a second external electrode connected to the first group of internal electrode layers and insulated from the second group of internal electrode layers at the second surface.

Abstract: Subject matter disclosed herein may relate to energy harvesting piezoelectric modules as may be used, for example, in power supplies for tire pressure monitoring systems.

Abstract: A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.

Abstract: A piezoelectric ceramic which has a large value of coercive electric field and, in addition, which can be fired at low temperatures of 950° C. or lower, is provided. It has a composition represented by Pbx-a-dBiaM3d{M1b(M21/3Nb2/3)yZr1-b-y-zTiz}O3 where M1 and M2 represent, independently, at least one of Ni and Zn, and M3 represents at least one of Ba and Sr, 0.05?a?0.15, 0<b?0.075, 0?(a?2b), 0?d?0.1, 0.97?x?1.00, 0.020?y?0.250, and 0.398?z?0.512. It is preferable that M1 represents Ni, and M2 represents at least one of Ni and Zn. Moreover, it is preferable that Ni is in the state of being segregated.

Abstract: Exemplary embodiments provide a roll member that includes one or more piezoelectric tape and methods for making and using the roll member. The piezoelectric tape can be flexible and include a plurality of piezoelectric elements configured in a manner that the piezoelectric elements can be addressed individually or as groups with various numbers of elements in each group. In an exemplary embodiment, the disclosed roll member can be used as a donor roll for a development system of an electrophotographic printing machine to create controlled and desired toner powder cloud for high quality image development, such as an image on image development in a hybrid scavengeless development (HSD) system.